Pub Date : 1978-11-01DOI: 10.1049/IJ-SSED.1978.0053
G. G. Roberts, K. P. Pande, W. A. Barlow
The electrical properties of m.i.s. structures based on indium phosphide and organic films deposited using the Langmuir-Blodgett technique have been investigated. A strongly inverted low-frequency C/V response occurs at approximately 30 Hz using both melt-grown InP single crystals and epitaxial layers of this material prepared using the vapour-phase technique. Interface state distributions have been evaluated from the admittance data using quasistatic and conductance techniques. For an n-type InP-epitaxial-wafer/cadmium-stearate junction the effective surface-state density is found to be ~3 × 1011 cm?2 eV?1 over a large fraction of the bandgap. Average surface-state densities calculated for structures based on melt-grown crystals were approximately one order of magnitude higher. For the first time measurements are reported for a transistor incorporating a Langmuir-Blodgett film. From the transfer characteristics of this relatively simple depletion-mode device the InP field-effect surface mobility is calculated to be 2250 cm2 V?1 s?1
研究了用Langmuir-Blodgett技术沉积的磷化铟和有机薄膜结构的电学性质。在大约30 Hz的频率下，使用熔融生长的InP单晶和使用气相技术制备的这种材料的外延层，出现了强烈的低频反转C/V响应。利用准静态和电导技术从导纳数据中评估了界面状态分布。对于n型inp外延晶片/硬脂酸镉结，发现有效表面态密度为~3 × 1011 cm?2电动汽车?1在很大一部分带隙上。基于熔体生长晶体的结构计算的平均表面态密度大约高出一个数量级。首次报道了采用Langmuir-Blodgett薄膜的晶体管的测量结果。根据这种相对简单的耗尽模式器件的转移特性，计算出InP场效应表面迁移率为2250 cm2 V?1 s ?1
{"title":"Inp/langmuir-film m.i.s.f.e.t.","authors":"G. G. Roberts, K. P. Pande, W. A. Barlow","doi":"10.1049/IJ-SSED.1978.0053","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1978.0053","url":null,"abstract":"The electrical properties of m.i.s. structures based on indium phosphide and organic films deposited using the Langmuir-Blodgett technique have been investigated. A strongly inverted low-frequency C/V response occurs at approximately 30 Hz using both melt-grown InP single crystals and epitaxial layers of this material prepared using the vapour-phase technique. Interface state distributions have been evaluated from the admittance data using quasistatic and conductance techniques. For an n-type InP-epitaxial-wafer/cadmium-stearate junction the effective surface-state density is found to be ~3 × 1011 cm?2 eV?1 over a large fraction of the bandgap. Average surface-state densities calculated for structures based on melt-grown crystals were approximately one order of magnitude higher. For the first time measurements are reported for a transistor incorporating a Langmuir-Blodgett film. From the transfer characteristics of this relatively simple depletion-mode device the InP field-effect surface mobility is calculated to be 2250 cm2 V?1 s?1","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123400909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-11-01DOI: 10.1049/IJ-SSED.1978.0055
A. J. Low, J. Carroll
Mode-locked laser pulses of less than 10 ps duration are used to switch electrical gates made from microstrip line on high-resistivity silicon, in 10 ps. These gates can generate steps and pulses of around 100 V with 10 ps rise and fall times. Sampling can also be accomplished with a 10 ps aperture. By combining a group of such gates, along with the generation of appropriate laser pulses and timing signals, a sampling system is formed. Simple time-domain reflectometry measurements are made to demonstrate the system and to show that practical transitions to these gates can be made for signals at least up to 35 GHz.
{"title":"10ps optoelectronic sampling system","authors":"A. J. Low, J. Carroll","doi":"10.1049/IJ-SSED.1978.0055","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1978.0055","url":null,"abstract":"Mode-locked laser pulses of less than 10 ps duration are used to switch electrical gates made from microstrip line on high-resistivity silicon, in 10 ps. These gates can generate steps and pulses of around 100 V with 10 ps rise and fall times. Sampling can also be accomplished with a 10 ps aperture. By combining a group of such gates, along with the generation of appropriate laser pulses and timing signals, a sampling system is formed. Simple time-domain reflectometry measurements are made to demonstrate the system and to show that practical transitions to these gates can be made for signals at least up to 35 GHz.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128906413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-11-01DOI: 10.1049/IJ-SSED:19780059
N. Evans, H. Gamble, S. H. Raza
An exploratory electronically programmable transversal filter suitable for analogue signal processing has been realised and successfully operated. The basic element of the system is an eight sample parallel-operated intracell charge-coupled device. Results obtained in optimising the drive parameters of pulse amplitude, width and time are presented and discussed in relation to device physics and operation. Autocorrelations of unipolar analogue and digital signals are presented. These devices are ideally suitable for incorporation in a system using digital storage of the weighting information. An advantage of introcell c.c.d.s with integrated on-chip control logic would be the ease with which such devices could be interconnected to provide any desired signal-processing capability. This would enable a flexible modular approach to be adopted when designing complex signal processors.
{"title":"An investigation into the use of intracell c.c.d.s for analogue and digital signal processing","authors":"N. Evans, H. Gamble, S. H. Raza","doi":"10.1049/IJ-SSED:19780059","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780059","url":null,"abstract":"An exploratory electronically programmable transversal filter suitable for analogue signal processing has been realised and successfully operated. The basic element of the system is an eight sample parallel-operated intracell charge-coupled device. Results obtained in optimising the drive parameters of pulse amplitude, width and time are presented and discussed in relation to device physics and operation. Autocorrelations of unipolar analogue and digital signals are presented. These devices are ideally suitable for incorporation in a system using digital storage of the weighting information. An advantage of introcell c.c.d.s with integrated on-chip control logic would be the ease with which such devices could be interconnected to provide any desired signal-processing capability. This would enable a flexible modular approach to be adopted when designing complex signal processors.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121347898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-11-01DOI: 10.1049/IJ-SSED:19780056
H. Feltl
Due to impurity redistribution and ion implantation, m.o.s. transistors are usually doped nonuniformly beneath the gate. From an analytical solution of Poisson's equation a modified expression for the threshold voltage has been derived. The change in the impurity concentration is taken into account, on the one side, in the usual manner by its contribution to the surface charge and, on the other side, on the basis of its contribution to the surface potential instead of the rather arbitrary approximation by an ‘effective’ impurity concentration. The modified formula gives a better description of the measured threshold voltages at least for an extended region, if not for the entire range of the applied substrate bias voltage. As theoretically predicted, the substrate bias coefficient corresponds to the bulk impurity concentration. A comparison with experimental results shows exceptionally close agreement if the depletion layer fully, or largely, covers the region of altered impurity concentration. If this region extends substantially beyond the depletion layer, deviations are observed. This result has been confirmed from impurity profiles determined for the purpose of verification.
{"title":"Threshold voltage of m.o.s. transistors doped nonuniformly near the surface","authors":"H. Feltl","doi":"10.1049/IJ-SSED:19780056","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780056","url":null,"abstract":"Due to impurity redistribution and ion implantation, m.o.s. transistors are usually doped nonuniformly beneath the gate. From an analytical solution of Poisson's equation a modified expression for the threshold voltage has been derived. The change in the impurity concentration is taken into account, on the one side, in the usual manner by its contribution to the surface charge and, on the other side, on the basis of its contribution to the surface potential instead of the rather arbitrary approximation by an ‘effective’ impurity concentration. The modified formula gives a better description of the measured threshold voltages at least for an extended region, if not for the entire range of the applied substrate bias voltage. As theoretically predicted, the substrate bias coefficient corresponds to the bulk impurity concentration. A comparison with experimental results shows exceptionally close agreement if the depletion layer fully, or largely, covers the region of altered impurity concentration. If this region extends substantially beyond the depletion layer, deviations are observed. This result has been confirmed from impurity profiles determined for the purpose of verification.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"596 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132763873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-09-01DOI: 10.1049/IJ-SSED.1978.0049
J. W. Limbeek, J. Lucas
The emission of 4.3 ?m infrared fluorescent radiation from aglow discharge has been measured in six gas mixtures of varying proportions of carbon dioxide, nitrogen and helium. The results have been given as a radiation efficiency (ratio of radiation energy to the input electrical energy) and have been measured as a function of E/N (ratio of electric field to gas number density). A comparison has been made between the experimental results and the theoretical values for the range 3 × 10?21 < E/N < 56 × 10?21 Vm2. A good agreement has been obtained which verifies the calculated rates of vibrational excitation and confirms that relaxation processes are dominant for the E/N range investigated.
在六种不同比例的二氧化碳、氮气和氦气混合物中，测量了发光放电产生的4.3 μ m红外荧光辐射。结果以辐射效率(辐射能量与输入电能之比)的形式给出，并以E/N(电场与气体数密度之比)的函数进行了测量。在3 × 10?的范围内，将实验结果与理论值进行了比较。21 < e / n < 56 × 10?21 Vm2。得到的结果很好地吻合，验证了计算的振动激发率，并证实了松弛过程在所研究的E/N范围内占主导地位。
{"title":"Computation and measurement of the fluorescent infrared radiation from glow discharges in CO2-N2-He gas mixtures","authors":"J. W. Limbeek, J. Lucas","doi":"10.1049/IJ-SSED.1978.0049","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1978.0049","url":null,"abstract":"The emission of 4.3 ?m infrared fluorescent radiation from aglow discharge has been measured in six gas mixtures of varying proportions of carbon dioxide, nitrogen and helium. The results have been given as a radiation efficiency (ratio of radiation energy to the input electrical energy) and have been measured as a function of E/N (ratio of electric field to gas number density). A comparison has been made between the experimental results and the theoretical values for the range 3 × 10?21 < E/N < 56 × 10?21 Vm2. A good agreement has been obtained which verifies the calculated rates of vibrational excitation and confirms that relaxation processes are dominant for the E/N range investigated.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125756336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-09-01DOI: 10.1049/IJ-SSED.1978.0050
J. W. Limbeek, J. Lucas
The drift velocity and longitudinal diffusion coefficient have been obtained for electrons in six CO2-N2-He gas mixtures with gas ratios 2:1:3, 1:1:8,1:2:3, 1:7:30, 4:1:12 and 1:1:3. A time-of-flight technique was employed to obtain accurate measurements in the range of 0.71 < E/N < 565 Td (E/N is, the ratio of electric field to gas number density and 1 Td = 10−21 Vm2). A comparison is made with the theorectical calculations of Lowke et al, the experimental values show good agreement at low E/N, but at high E/N the experimental values are larger than the theoretical values.
{"title":"Time-of-flight measurements of electron transport parameters in CO2-H2-He gas mixtures","authors":"J. W. Limbeek, J. Lucas","doi":"10.1049/IJ-SSED.1978.0050","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1978.0050","url":null,"abstract":"The drift velocity and longitudinal diffusion coefficient have been obtained for electrons in six CO2-N2-He gas mixtures with gas ratios 2:1:3, 1:1:8,1:2:3, 1:7:30, 4:1:12 and 1:1:3. A time-of-flight technique was employed to obtain accurate measurements in the range of 0.71 < E/N < 565 Td (E/N is, the ratio of electric field to gas number density and 1 Td = 10−21 Vm2). A comparison is made with the theorectical calculations of Lowke et al, the experimental values show good agreement at low E/N, but at high E/N the experimental values are larger than the theoretical values.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128746408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-09-01DOI: 10.1049/IJ-SSED:19780048
A. Nassibian, R. B. Calligaro, J. Simmons
This paper presents a silicon device (m.i.s.t.), with an optical threshold, which can operate as a digital optical switch. Its operation and characteristics are presented. A good correlation between theory and the experimental results is obtained. The responsivity and sensitivity of 0.9 AW?1 and 3.9 × 10?4 mA/?V are obtained, respectively. Possible applications in fast optical digital isolation and in optical communication systems are envisaged.
本文介绍了一种具有光阈值的硅器件(m.i.s.t)，它可以作为数字光开关工作。介绍了它的工作原理和特点。理论与实验结果吻合良好。0.9 AW的响应度和灵敏度?1和3.9 × 10?4 mA / ?分别得到V。展望了在快速光学数字隔离和光通信系统中的可能应用。
{"title":"Digital optical metal insulator silicon thyristor (o.m.i.s.t.)","authors":"A. Nassibian, R. B. Calligaro, J. Simmons","doi":"10.1049/IJ-SSED:19780048","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780048","url":null,"abstract":"This paper presents a silicon device (m.i.s.t.), with an optical threshold, which can operate as a digital optical switch. Its operation and characteristics are presented. A good correlation between theory and the experimental results is obtained. The responsivity and sensitivity of 0.9 AW?1 and 3.9 × 10?4 mA/?V are obtained, respectively. Possible applications in fast optical digital isolation and in optical communication systems are envisaged.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125740274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-09-01DOI: 10.1049/IJ-SSED:19780051
J. White, J. Smith
A nondestructive infrared emission-measurement technique, which allows point-by-point determination of the effective doping level within the depletion layer of a reverse-biased p-n junction, is described. The method is an alternative to normal capacitance-voltage techniques which give a value averaged over the entire junction area. With this technique a spatial resolution of about 15 μm is obtainable and a further advantage is that it is unaffected by high reverse currents.
{"title":"Infrared high spatial-resolution determination of doping levels in p-n junctions","authors":"J. White, J. Smith","doi":"10.1049/IJ-SSED:19780051","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780051","url":null,"abstract":"A nondestructive infrared emission-measurement technique, which allows point-by-point determination of the effective doping level within the depletion layer of a reverse-biased p-n junction, is described. The method is an alternative to normal capacitance-voltage techniques which give a value averaged over the entire junction area. With this technique a spatial resolution of about 15 μm is obtainable and a further advantage is that it is unaffected by high reverse currents.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"149 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122454721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-09-01DOI: 10.1049/IJ-SSED.1978.0052
O. Nielsen
The open-circuit voltage V o.c. of m.i.s. cells has been reported and has been observed from our own experiments to be in the range of 400-525 mV for Al-SiO 2 -p-Si cells and in the range of 220-400 mV for Au-SiO 2 -n-Si cells. This is in contrast to the reported values of barrier heights for schottky diodes without an insulating layer. The difference in V oc is due to the change in the effective barrier height o mS . The change in o mS is assumed to be due to fixed positive charges in the thin oxide, and from the reported values of ÷ mS the charge density in the oxide Q ss/q has been calculated to be about 5 × 10 12 cm -2 .
{"title":"Effects of fixed charges in the oxide of thermally oxidised m.i.s. solar cells","authors":"O. Nielsen","doi":"10.1049/IJ-SSED.1978.0052","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1978.0052","url":null,"abstract":"The open-circuit voltage V\u0000 o.c. \u0000of m.i.s. cells has been reported and has been observed from our own experiments to be in the range of 400-525 mV for Al-SiO\u0000 2 \u0000-p-Si cells and in the range of 220-400 mV for Au-SiO\u0000 2 \u0000-n-Si cells. This is in contrast to the reported values of barrier heights for schottky diodes without an insulating layer. The difference in V\u0000 oc \u0000is due to the change in the effective barrier height o\u0000 mS \u0000. The change in o\u0000 mS \u0000is assumed to be due to fixed positive charges in the thin oxide, and from the reported values of ÷\u0000 mS \u0000the charge density in the oxide Q\u0000 ss/q \u0000has been calculated to be about 5 × 10\u0000 12 \u0000cm\u0000 -2 \u0000.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116939748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-09-01DOI: 10.1049/IJ-SSED:19780046
C. Goodman
The possibilities of optical communication at 4 μm wavelength are discussed. New materials are proposed for optical fibres capable of very low loss at this wavelength. The possibility of fabricating not only glass but single-crystal optical fibres at acceptable growth rates is suggested. A novel heterojunction system is described for making the necessary detectors and high-radiance sources, with the possibility of room-temperature operation. Advantages of optical communication at 4 μm rather than at 1 μm include relaxed demands on the precision of optical alignment (particularly important for single-mode operation), greater tolerance of transition metal impurities in the fibre as well as reduced scattering loss, and, therefore, the promise of much lower fibre loss if the required purity can be achieved. Extremely long stage lengths, e.g. 1000 km, should be possible if, as seems likely, fibre losses approaching 10−3 dB/dm can be achieved. Other possible wavelengths for optical communications are also discussed.
{"title":"Devices and materials for 4 μm-band fibre-optical communication","authors":"C. Goodman","doi":"10.1049/IJ-SSED:19780046","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780046","url":null,"abstract":"The possibilities of optical communication at 4 μm wavelength are discussed. New materials are proposed for optical fibres capable of very low loss at this wavelength. The possibility of fabricating not only glass but single-crystal optical fibres at acceptable growth rates is suggested. A novel heterojunction system is described for making the necessary detectors and high-radiance sources, with the possibility of room-temperature operation. Advantages of optical communication at 4 μm rather than at 1 μm include relaxed demands on the precision of optical alignment (particularly important for single-mode operation), greater tolerance of transition metal impurities in the fibre as well as reduced scattering loss, and, therefore, the promise of much lower fibre loss if the required purity can be achieved. Extremely long stage lengths, e.g. 1000 km, should be possible if, as seems likely, fibre losses approaching 10−3 dB/dm can be achieved. Other possible wavelengths for optical communications are also discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116683505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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