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Exchange-Biased Multiring Planar Hall Magnetoresistive Sensors With Nanotesla Resolution in Nonshielded Environments 非屏蔽环境下具有纳特斯拉分辨率的交换偏压多线平面霍尔磁阻传感器
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-31 DOI: 10.1109/LMAG.2024.3490380
J. Schmidtpeter;Proloy T. Das;Y. Zabila;C. Schubert;T. Gundrum;T. Wondrak;D. Makarov
Planar Hall magnetoresistive sensors (PHMRs) are promising candidates for various magnetic sensing applications due to their high sensitivity, low power consumption, and compatibility with integrated circuit technology. However, their performance is often limited by inherent noise sources, impacting their resolution and overall sensitivity. Here the effect of three bilayer structures NiFe(10 nm)/IrMn(10 nm), NiFe(30 nm)/IrMn(10 nm), and NiFe(30 nm)/IrMn(20 nm) on noise levels is investigated at low frequency (DC-25 Hz). This study includes a detailed investigation on the optimization process and noise characteristics of multiring PHMR sensors, focusing on identifying and quantifying the dominant noise sources. The experimental measurements are complemented by a theoretical analysis of noise sources including thermal noise, 1/f noise, intermixing, and environmental noise. The best magnetic resolution is observed for the NiFe(30 nm)/IrMn(10 nm) structure, which achieves a detectivity below 1.5 nT/√Hz at 10 Hz in a nonshielded environment at room temperature. In addition, a substantial improvement in sensitivity is observed by annealing the sensors at 250 °C for 1 h. The findings of this study contribute to a deeper understanding of noise behavior in PHMR sensors, paving the way for developing strategies to improve their performance for demanding sensing applications at low frequencies.
平面霍尔磁阻传感器(PHMRs)由于其高灵敏度、低功耗和与集成电路技术的兼容性,在各种磁传感应用中具有很好的应用前景。然而,它们的性能往往受到固有噪声源的限制,影响它们的分辨率和整体灵敏度。本文研究了三种双层结构NiFe(10 nm)/IrMn(10 nm)、NiFe(30 nm)/IrMn(10 nm)和NiFe(30 nm)/IrMn(20 nm)对低频(DC-25 Hz)噪声水平的影响。本文对多环PHMR传感器的优化过程和噪声特性进行了详细的研究,重点对主要噪声源进行了识别和量化。实验测量辅以噪声源的理论分析,包括热噪声、1/f噪声、混频噪声和环境噪声。NiFe(30 nm)/IrMn(10 nm)结构的磁性分辨率最佳,在室温下无屏蔽环境下,在10 Hz下的探测率低于1.5 nT/√Hz。此外,通过在250°C下退火1小时,可以观察到灵敏度的显着提高。本研究的结果有助于更深入地了解PHMR传感器的噪声行为,为开发策略以提高其在低频苛刻传感应用中的性能铺平了道路。
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引用次数: 0
Spintronic Neuron Using a Magnetic Tunnel Junction for Low-Power Neuromorphic Computing 利用磁隧道结的自旋电子神经元实现低功耗神经形态计算
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-24 DOI: 10.1109/LMAG.2024.3484957
Steven Louis;Hannah Bradley;Cody Trevillian;Andrei Slavin;Vasyl Tyberkevych
This letter presents a novel spiking artificial neuron design based on a combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware used in artificial intelligence and machine learning faces significant challenges related to high power consumption and scalability. To address these challenges, spintronic neurons, which can mimic biologically inspired neural behaviors, offer a promising solution. We present a model of an SV/MTJ-based neuron that uses technologies that have been successfully integrated with CMOS in commercially available applications. The operational dynamics of the neuron are derived analytically through the Landau–Lifshitz-Gilbert–Slonczewski equation, demonstrating its ability to replicate key spiking characteristics of biological neurons such as response latency and refractive behavior. Simulation results indicate that the proposed neuron design can operate on a timescale of about 1 ns, without any bias current and with power consumption as low as 50 ${mu }$W.
这封信介绍了一种基于组合自旋阀/磁隧道结(SV/MTJ)的新型尖峰人工神经元设计。用于人工智能和机器学习的传统硬件面临着与高功耗和可扩展性有关的重大挑战。为了应对这些挑战,自旋电子神经元提供了一种很有前景的解决方案,它可以模仿受生物启发的神经行为。我们介绍了一个基于 SV/MTJ 的神经元模型,该模型采用的技术已在商业应用中成功与 CMOS 集成。我们通过 Landau-Lifshitz-Gilbert-Slonczewski 方程分析推导出神经元的运行动力学,证明它有能力复制生物神经元的关键尖峰特性,如响应延迟和折射行为。仿真结果表明,所提出的神经元设计可以在约 1 ns 的时间尺度上运行,无需任何偏置电流,功耗低至 50 ${mu }$W。
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引用次数: 0
Relaxation Dynamics of Sputtered Fe80Co20 Thin Films on Different Substrates: Micromagnetic Validation 不同衬底上溅射Fe80Co20薄膜的弛豫动力学:微磁验证
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-21 DOI: 10.1109/LMAG.2024.3484271
Mohammad Asif;Prashant Kumar;Mirza Tariq Beg;M. Nizamuddin;Bijoy Kumar Kuanr
In the present investigation, we have demonstrated the effect of different substrates (Si, SiO2${rm{, }};text{and};text {{A}}{{{text {l}}}_{2}}{{{text {O}}}_{3}}$) and deposition temperatures (TD = 27 °C to 450 °C) of sputtered Fe80Co20 ferromagnetic thin films of 30 nm thickness on their microstructural, static, and dynamic properties. The lowest value of Gilbert damping (αeff) of 5.1 $ times, 10$−3 with a high saturation magnetization (MS) is the outcome of the improved atomic ordering and overall film crystallinity with ultralow interfacial roughness (0.23 ± 0.03 nm) of 400 °C grown films. The structural analysis from atomic force microscopy depicts temperature-dependent improvement in films grown at 400 °C. From ferromagnetic resonance and vibrating sample magnetometry experiments, magnetization was determined to be the highest MS $ approx text {1628.8} {rm{emu/cc}}$ for the films grown at 400 °C. We have validated the above-mentioned experimental data through micromagnetic simulation using ubermag and an object-oriented micromagnetic framework that is used in backend for computation.
在本研究中,我们展示了不同衬底(Si, SiO2${rm{,}} text{和};text{{A}}{{text{l}}}_{2}}{{{text {O}}}_{3}}$)和沉积温度(TD = 27°C ~ 450°C)对溅射30nm厚度Fe80Co20铁磁薄膜微观结构、静态和动态性能的影响。在高饱和磁化(MS)条件下,Gilbert阻尼(αeff)的最小值为5.1 $ times, 10$−3,这是400°C生长膜的原子有序性和整体结晶度得到改善,界面粗糙度(0.23±0.03 nm)极低的结果。原子力显微镜的结构分析描述了在400°C下生长的薄膜的温度依赖性改善。通过铁磁共振和振动样品磁强计实验,确定了在400°C生长的薄膜的最高磁化强度为MS $ text {1628.8} rm{emu/cc}}$。我们利用ubermag和一个面向对象的微磁框架对上述实验数据进行了验证,该微磁框架在后端用于计算。
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引用次数: 0
Biaxially Stretchable Spin Valves With Stable Magnetic Sensing Performance 具有稳定磁感应性能的双轴可拉伸旋转阀
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-17 DOI: 10.1109/LMAG.2024.3483069
Mengting Zou;Xilai Bao;Xinze Li;Yali Xie;Huali Yang;Lili Pan;Xiaojian Zhu;Run-Wei Li
Spin valves have received significant attention in the realm of flexible magnetic materials and devices due to their advantages of rapid response and high integration. Despite these benefits, the practical application of spin valves in wearable devices is constrained by their low stretchability and strain stability under tensile strain. Here, by designing spin valves with zigzag-wrinkled structure, we demonstrated that the magnetotransport properties of our spin valves remained unaffected under 25% biaxial tensile strain, revealing stretchability and strain stability. These outstanding performances are related to the zigzag-wrinkled structure generated after releasing the biaxial prestrain in polymer polydimethylsiloxane substrates. The flattening of the zigzag wrinkles under the biaxial tensile strain releases the direct effect of strain on the metal multilayers, thereby maintaining sensing performances upon stretching. This innovative design paves the way for the development of robust, flexible magnetic devices suitable for wearable technology.
自旋阀因其快速响应和高集成度的优势,在柔性磁性材料和器件领域受到了广泛关注。尽管有这些优点,但自旋阀在可穿戴设备中的实际应用却受到其低拉伸性和拉伸应变稳定性的限制。在这里,我们通过设计具有人字形皱纹结构的自旋阀,证明了自旋阀在 25% 双轴拉伸应变下的磁传输特性不受影响,从而揭示了其拉伸性和应变稳定性。这些出色的性能与聚合物聚二甲基硅氧烷基底释放双轴预应变后产生的人字形皱纹结构有关。人字形皱纹在双轴拉伸应变下变平,释放了应变对金属多层膜的直接影响,从而在拉伸时保持传感性能。这种创新设计为开发适用于可穿戴技术的坚固灵活的磁性器件铺平了道路。
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引用次数: 0
Mössbauer and Density Functional Studies of Ferrimagnetic Fe3Se4 铁磁性 Fe3Se4 的摩斯鲍尔和密度函数研究
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-14 DOI: 10.1109/LMAG.2024.3479924
Yang-Ki Hong;Jihoon Park;Hang Nam Ok;Minyeong Choi;Md Abdul Wahed;Myung-Hwa Jung;Chang-Dong Yeo
Monoclinic Fe3Se4 was synthesized using a ceramic method. Mössbauer spectroscopy and density functional theory were used to investigate the physical origins of its ferrimagnetism and high coercivity. At 78 K, 12 Mössbauer absorption lines were observed. These lines are composed of two subspectra, A and B, corresponding to Fe atoms at the 2a and 4i sites, respectively. At 320 K, the Mössbauer spectrum collapsed, indicating a transition from a ferrimagnetic to a paramagnetic state. This temperature is close to the Curie temperature (TC) of 331 or 315 K reported in the literature. The analysis of local structural symmetry confirmed that the Fe atoms in the 2a sites are more symmetrically coordinated with neighboring Se atoms than those in the 4i sites. Therefore, the Fe atoms in the 2a sites exhibit a higher hyperfine magnetic field (HMF) of 225 kOe and a weaker quadrupole splitting (QS) of 0.17 mm/s than the Fe atoms in the 4i sites, which exhibit an HMF of 105 kOe and a QS of 0.55 mm/s. Our density functional study confirmed that Fe3Se4 exhibits ferrimagnetic behavior, with a magnetic moment of 4.48 µB/u.c. and a TC of 354 K. Fe3Se4 shows a high magnetocrystalline anisotropy constant (Ku) of 0.9 × 106 erg/cm3. This high Ku value is attributed to the Fe atoms at the 4i sites. It is suggested that the high coercivity of Fe3Se4, as reported in the literature, is due to the distorted 4i site, which experiences the Jahn–Teller effect.
采用陶瓷法合成了单斜Fe3Se4。研究人员利用莫斯鲍尔光谱学和密度泛函理论研究了其铁磁性和高矫顽力的物理根源。在 78 K 时,观察到 12 条莫斯鲍尔吸收线。这些线由两个子谱 A 和 B 组成,分别对应于 2a 和 4i 位点上的铁原子。在 320 K 时,莫斯鲍尔光谱坍缩,表明铁磁态向顺磁态过渡。这一温度接近文献报道的居里温度(TC)331 或 315 K。对局部结构对称性的分析证实,与 4i 位点的铁原子相比,2a 位点的铁原子与相邻 Se 原子的配位更对称。因此,2a 位点的铁原子比 4i 位点的铁原子表现出更高的超频磁场(HMF)(225 kOe)和更弱的四极分裂(QS)(0.17 mm/s),后者表现出 105 kOe 的 HMF 和 0.55 mm/s 的 QS。我们的密度泛函研究证实,Fe3Se4 具有铁磁性,磁矩为 4.48 µB/u.c.,TC 为 354 K。这一高 Ku 值归因于 4i 位点上的铁原子。根据文献报道,Fe3Se4 的高矫顽力是由于 4i 位点发生了扭曲,从而产生了贾恩-泰勒效应。
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引用次数: 0
Spin-Circuit Representation of Spin Pumping Into Topological Insulators and Determination of Giant Spin Hall Angle and Inverse Spin Hall Voltages 自旋泵入拓扑绝缘体的自旋电路表征及巨自旋霍尔角和逆自旋霍尔电压的确定
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-14 DOI: 10.1109/LMAG.2024.3479932
Kuntal Roy
Topological insulators and giant spin-orbit torque switching of nanomagnets are among the frontier topics for the development of energy-efficient spintronic devices. Spin-circuit representations involving different materials and phenomena are quite well established now for their prowess of interpreting experimental results and then designing complex and efficient functional devices. Here, we construct the spin-circuit representation of spin pumping into topological insulators, considering both the bulk and surface states with parallel channels, which allows for the interpretation of practical experimental results. We show that the high increase in effective spin mixing conductance and inverse spin Hall voltages cannot be explained by the low-conductive bulk states of topological insulators. We determine a high spin Hall angle close to the maximum magnitude of one from experimental results and address the controversy in the literature by correctly estimating the parameters involved in the system. With an eye to designing energy-efficient spin devices, we further employ a spin-sink layer in the spin-circuit formalism to increase the effective spin mixing conductance at low thicknesses and double the inverse spin Hall voltage.
拓扑绝缘体和纳米磁体的巨自旋轨道转矩开关是开发高能效自旋电子器件的前沿课题。涉及不同材料和现象的自旋电路表示由于其对实验结果的解释和设计复杂而高效的功能器件的能力而得到了很好的建立。在此,我们构建了自旋泵入拓扑绝缘体的自旋电路表示,同时考虑了具有平行通道的体态和表面态,从而允许对实际实验结果进行解释。我们证明了有效自旋混合电导和逆自旋霍尔电压的高增加不能用拓扑绝缘体的低导电性体态来解释。我们从实验结果中确定了接近最大值1的高自旋霍尔角,并通过正确估计系统涉及的参数来解决文献中存在的争议。为了设计节能的自旋器件,我们进一步在自旋电路形式中引入自旋汇层,以增加低厚度下的有效自旋混合电导,并将逆自旋霍尔电压提高一倍。
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引用次数: 0
Micromagnetic Modeling of Parametric Amplification of Forward Volume Spin Waves by Noncollinear Surface Acoustic Waves 非共振面声波对正向体积自旋波参数放大的微磁建模
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-14 DOI: 10.1109/LMAG.2024.3479922
Carson Rivard;Albrecht Jander;Pallavi Dhagat
Micromagnetic modeling is used to simulate the parametric amplification of forward volume spin waves by a surface acoustic wave (SAW) traveling noncollinearly in a yttrium–iron–garnet thin film. The angle of incidence between the signal spin wave and the SAW pump determines the strength of parametric coupling as well as the propagation direction of the resulting idler spin wave. In a collinear arrangement, where the spin wave and SAW travel together, the acoustic pump amplitude needed to achieve amplification is greater than the threshold for the parametric generation of spin waves from the thermal background. However, in a noncollinear arrangement with >35° angle of incidence between the signal spin wave and SAW pump, the coupling is enhanced and allows for continuous amplification of spin waves by more than 10× without simultaneously resulting in unconstrained growth of thermal spin waves. The angular dependence of the parametric coupling strength, as determined from the simulations, agrees qualitatively with theoretical predictions.
微磁建模用于模拟在钇-铁-石榴石薄膜中非线性传播的表面声波(SAW)对前向体积自旋波的参数放大。信号自旋波与声表面波泵之间的入射角决定了参数耦合的强度以及由此产生的惰性自旋波的传播方向。在自旋波和声表面波一起传播的共线排列中,实现放大所需的声泵振幅大于从热背景中参数化产生自旋波的阈值。然而,在信号自旋波与声表面波泵之间的入射角大于 35° 的非共线布置中,耦合得到了增强,可将自旋波持续放大 10 倍以上,而不会同时导致热自旋波的无限制增长。模拟确定的参数耦合强度的角度依赖性与理论预测基本一致。
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引用次数: 0
Multiresonance Microwave Absorption in Ti–Mn Substituted Barium Hexaferrite Composites 钛锰取代六价钡铁氧体复合材料中的多共振微波吸收
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-14 DOI: 10.1109/LMAG.2024.3479936
M. J. Vazquez Bernardez;J. Solano;M. Bailleul;N. Vukadinovic;D. Stoeffler;C. Lefevre
Ti–Mn substituted Ba(TiMn)xFe12-2xO19 hexaferrite randomly oriented composites were obtained by conventional ceramic synthesis. At zero applied magnetic field, in its polycrystalline powder form, this ferrimagnetic compound exhibits a multipeak permeability spectrum with two high-frequency resonances that converge under the action of an external magnetic field. We conduct a broad-band ferromagnetic resonances characterization of this system under an applied magnetic field between 0 and 2 T and integrate the results with micromagnetic simulations to investigate the presence of high-frequency resonating magnetic domains contingent upon the sample's microstructure. Simulations show that magnetic domains separated by domain walls upon each magnetic particle are responsible for the multipeak resonance in the Ka-band. By combining the simulated spectra with an effective medium theory accounting for the dilution effect of the dielectric matrix, we reproduce the zero-field permeability spectra.
通过传统陶瓷合成法获得了钛锰取代的 Ba(TiMn)xFe12-2xO19 六价铁氧体无规取向复合材料。在零外加磁场条件下,这种多晶粉末状的铁磁化合物表现出多峰值磁导率谱,其中有两个高频共振,在外加磁场的作用下,这两个共振趋于一致。我们在 0 到 2 T 的外加磁场下对该系统进行了宽带铁磁共振表征,并将结果与微磁模拟相结合,以研究样品的微观结构是否存在高频共振磁畴。模拟结果表明,每个磁性粒子上被磁畴壁隔开的磁畴是产生 Ka 波段多峰共振的原因。通过将模拟光谱与有效介质理论(考虑到介质基体的稀释效应)相结合,我们再现了零场磁导率光谱。
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引用次数: 0
Role of Shape Ellipticity on Dipole-Exchange Spin Waves in Ferromagnetic Nanorings 形状椭圆度对铁磁纳米环中偶极交换自旋波的作用
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-13 DOI: 10.1109/LMAG.2024.3461575
Yassin Elmeligi;Bushra Hussain;Michael G. Cottam
The properties of the quantized spin-wave frequencies and the transition field between the two stable magnetization states (the low-field vortex state and the higher-field onion state) are studied for elliptical nanorings. The dependences of these quantities on the nanoring sizes and the degree of ellipticity are examined over a wide range of values for the applied magnetic field and its orientation. The novel effects introduced when the symmetry axes of the inner elliptical edges of the rings are rotated relative to those of the outer elliptical edge are also studied. To characterize these effects, our theory makes use of a Hamiltonian-based dipole-exchange methodology, adapted from that used to elucidate the spin-wave modes in circular nanorings. It is found that spin-wave frequencies and the behavior of the transition field(s) depend sensitively on the degree of ellipticity, the rotation angle of the inner elliptical edge with respect to the outer elliptical edge, and the direction of the applied field relative to the nanoring axes.
研究了椭圆形纳米环的量化自旋波频率和两种稳定磁化状态(低磁场涡旋态和高磁场洋葱态)之间的过渡磁场的特性。在应用磁场及其方向的广泛数值范围内,研究了这些量与纳米环尺寸和椭圆度的关系。此外,还研究了环的内椭圆边对称轴相对于外椭圆边对称轴旋转时产生的新效应。为了描述这些效应,我们的理论采用了基于哈密顿的偶极子交换方法,该方法改编自用于阐明圆纳米环中自旋波模式的方法。研究发现,自旋波频率和过渡场的行为敏感地取决于椭圆度、内椭圆边相对于外椭圆边的旋转角度以及相对于纳米环轴线的外加场方向。
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引用次数: 0
Magnetic and Dielectric Properties of CoFeB Multilayer Thin Films With Oxide Capping Layer 带氧化物封盖层的 CoFeB 多层薄膜的磁性和介电特性
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-12 DOI: 10.1109/LMAG.2024.3459813
Yuting Liu;Sylvain Eimer;Jianyuan Zhao;Yiming Chen
Ferromagnetic multilayer thin films with oxide capping layer have potential applications in voltage-controlled magnetic devices. Here, we present the optimization of the magnetic and dielectric properties of CoFeB/MgO thin films with different capping layers (Ta, Al2O3, and HfO2). We find that the samples with oxide capping layers show a higher perpendicular magnetic anisotropy (PMA) than those with a Ta capping layer. Meanwhile, a high dielectric constant of 58 is obtained in samples capped with 30 nm of HfO2. This high dielectric constant is attributed to the formation of an oxygen vacancy-related capacitive double layer in the HfO2 film according to X-ray diffraction analyses and current–voltage measurements. Finally, we find that the optimal annealing temperature, which allows for both high PMA and dielectric constant, is between 250 °C and 290 °C. Our results could contribute to designing high-performance materials for controlling interfacial magnetic properties in novel spintronic devices.
带有氧化物覆盖层的铁磁多层薄膜在电压控制磁性器件中具有潜在的应用价值。在此,我们介绍了对具有不同覆盖层(Ta、Al2O3 和 HfO2)的 CoFeB/MgO 薄膜的磁性和介电性质的优化。我们发现,具有氧化物封盖层的样品比具有钽封盖层的样品显示出更高的垂直磁各向异性(PMA)。同时,用 30 nm 的 HfO2 覆层的样品获得了 58 的高介电常数。根据 X 射线衍射分析和电流电压测量,这一高介电常数归因于 HfO2 薄膜中形成了与氧空位相关的电容双层。最后,我们发现实现高 PMA 和介电常数的最佳退火温度介于 250 °C 和 290 °C 之间。我们的研究结果有助于设计高性能材料,以控制新型自旋电子器件的界面磁性能。
{"title":"Magnetic and Dielectric Properties of CoFeB Multilayer Thin Films With Oxide Capping Layer","authors":"Yuting Liu;Sylvain Eimer;Jianyuan Zhao;Yiming Chen","doi":"10.1109/LMAG.2024.3459813","DOIUrl":"10.1109/LMAG.2024.3459813","url":null,"abstract":"Ferromagnetic multilayer thin films with oxide capping layer have potential applications in voltage-controlled magnetic devices. Here, we present the optimization of the magnetic and dielectric properties of CoFeB/MgO thin films with different capping layers (Ta, Al\u0000<sub>2</sub>\u0000O\u0000<sub>3</sub>\u0000, and HfO\u0000<sub>2</sub>\u0000). We find that the samples with oxide capping layers show a higher perpendicular magnetic anisotropy (PMA) than those with a Ta capping layer. Meanwhile, a high dielectric constant of 58 is obtained in samples capped with 30 nm of HfO\u0000<sub>2</sub>\u0000. This high dielectric constant is attributed to the formation of an oxygen vacancy-related capacitive double layer in the HfO\u0000<sub>2</sub>\u0000 film according to X-ray diffraction analyses and current–voltage measurements. Finally, we find that the optimal annealing temperature, which allows for both high PMA and dielectric constant, is between 250 °C and 290 °C. Our results could contribute to designing high-performance materials for controlling interfacial magnetic properties in novel spintronic devices.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-5"},"PeriodicalIF":1.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
IEEE Magnetics Letters
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