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Study of Structural and Magnetic Properties of Antiferromagnetic Cr2MnGe Heusler Alloy 反铁磁Cr2MnGe Heusler合金的结构和磁性能研究
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-04-14 DOI: 10.1109/LMAG.2025.3560867
Karthik G;Shipra Das;T. R. Naveen Kumar;K Ravichandran
Engineered Heusler alloys have potential applications in spintronic devices owing to their fascinating properties. Therefore, we synthesized a ternary Cr2MnGe Heusler alloy using a simple solid-state reaction. Rietveld refinement of the X-ray diffraction data confirmed the presence of a cubic Fd-3m structure, specifically the B32a disorder Heusler phase with a space group number of 227. The microstructure and chemical composition of the Cr2MnGe sample confirmed agglomeration and adherence to the nominal composition of the Heusler alloy. Furthermore, the Cr2MnGe sample exhibits antiferromagnetic behavior with ferromagnetic clusters due to the site swapping of Cr–Mn and Cr–Ge, which contributes to a magnetic signal in the zero-field-cooled and field-cooled measurements. These findings highlight the potential of Cr2MnGe for application in magnetic tunnel junctions and spin valves, contributing to advancements in spintronic technologies.
工程Heusler合金由于其优异的性能在自旋电子器件中具有潜在的应用前景。因此,我们采用简单的固相反应合成了一种三元Cr2MnGe Heusler合金。x射线衍射数据的Rietveld细化证实了立方Fd-3m结构的存在,特别是空间群数为227的B32a无序Heusler相。Cr2MnGe样品的显微组织和化学成分证实了Heusler合金的团聚和附属性。此外,由于Cr-Mn和Cr-Ge的位置交换,Cr2MnGe样品表现出具有铁磁团簇的反铁磁行为,这有助于在零场冷却和场冷却测量中产生磁信号。这些发现突出了Cr2MnGe在磁隧道结和自旋阀中的应用潜力,有助于自旋电子技术的进步。
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引用次数: 0
Features and Peculiarities of Gate-Voltage Modulation of Spin-Orbit Interaction in FeB Nanomagnets: Insights Into the Physical Origins of the Voltage-Controlled Magnetic Anisotropy Effect FeB纳米磁体中自旋轨道相互作用的栅极电压调制的特征和特性:电压控制磁各向异性效应物理根源的见解
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-04-14 DOI: 10.1109/LMAG.2025.3560858
Vadym Zayets
This letter systematically investigates the fundamental mechanisms driving the voltage-controlled magnetic anisotropy (VCMA) effect, with a focus on the dependencies of the anisotropy field and the strength of spin-orbit (SO) interaction on gate voltage, measured in Ta/FeB/MgO nanomagnets. Our findings reveal an intriguing opposite polarity in the gate-voltage dependencies of the anisotropy field and the coefficient of SO interaction across all studied nanomagnets. This discovery challenges the prevailing assumption that SO interaction is the primary contributor to the VCMA effect, instead suggesting that gate-voltage modulation of magnetization is likely the dominant factor, as its polarity aligns with the observed modulation of anisotropy. The modulation of magnetic anisotropy is governed by two major contributions with opposite polarities, which tend to counterbalance each other, reducing the overall VCMA effect. Optimizing this balance could significantly enhance the VCMA effect, offering a promising avenue for broadening its applications. In addition, our measurements confirm that gate voltage does not modulate the in-plane component of spin accumulation, providing further insights into the underlying mechanisms of the VCMA effect.
本文系统地研究了驱动电压控制磁各向异性(VCMA)效应的基本机制,重点研究了各向异性场和自旋轨道(SO)相互作用强度对栅极电压的依赖关系,在Ta/FeB/MgO纳米磁铁中测量。我们的研究结果揭示了各向异性场的栅极电压依赖性和所有研究的纳米磁体的SO相互作用系数具有有趣的相反极性。这一发现挑战了普遍的假设,即SO相互作用是VCMA效应的主要因素,相反,表明磁化的门电压调制可能是主要因素,因为它的极性与观察到的各向异性调制一致。磁各向异性的调制是由两个极性相反的主要贡献控制的,它们往往相互抵消,从而降低了整体的VCMA效应。优化这种平衡可以显著增强VCMA效应,为扩大其应用范围提供了一条有希望的途径。此外,我们的测量证实栅极电压不会调制自旋积累的面内分量,从而进一步了解VCMA效应的潜在机制。
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引用次数: 0
Size Dependence of the Read Voltage and Electrical Diameter of STT MRAM Cells STT MRAM电池读电压和电径的尺寸依赖性
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-04-14 DOI: 10.1109/LMAG.2025.3560889
Goran Mihajlović;Wonjoon Jung;Noraica Dávila;Jeffrey Lille;Michael Tran;Jordan A. Katine;Michael K. Grobis
We present an experimental study of the size-dependent tunneling magnetoresistance ratio (TMR) and voltage read signal in perpendicular spin transfer torque magnetoresistive random-access (MRAM) memory cells, which shows that the maximum read signal is mostly independent of the size, while TMR decreases with decreasing size. Our analysis shows that this is due to a size-dependent parasitic resistance specific to the nanofabrication process and that the intrinsic $Delta text{RA}$ of the cells is size-independent. As a consequence, we show that the electrical diameter of an MRAM cell can be reliably extracted down to sub-20 nm assuming that $Delta text{RA}$ does not depend on the cell size.
实验研究了垂直自旋转移转矩磁阻随机存取(MRAM)存储单元中与尺寸相关的隧道磁阻比(TMR)和电压读取信号,结果表明最大读取信号与尺寸无关,而TMR则随着尺寸的减小而减小。我们的分析表明,这是由于纳米制造过程特有的尺寸依赖性寄生抗性,并且细胞的固有$Delta text{RA}$与尺寸无关。因此,我们表明,假设$Delta text{RA}$不依赖于细胞大小,MRAM细胞的电直径可以可靠地提取到低于20 nm。
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引用次数: 0
Fast Acquisition of Sensor Array Geometry of Whole-Head Magnetoencephalograph Systems Using a Neural Network 基于神经网络的全头脑磁仪传感器阵列几何结构快速采集
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-04-14 DOI: 10.1109/LMAG.2025.3560886
Yoshiaki Adachi;Daisuke Oyama;Gen Uehara
Acquiring position, orientation, and sensitivity of magnetometers in a helmet-shaped sensor array is crucial for accurate current source reconstruction in magnetoencephalography. To determine these parameters for each magnetometer, we utilize a spherical calibration coil array. In our previous study, the position and orientation of each magnetometer were determined as the solution of an inverse problem through a numerical search that minimized the difference between the theoretical magnetic field signals from each coil and the measured signals detected by the magnetometer. In this study, we applied a deep neural network to estimate the position and orientation of each magnetometer in the helmet-shaped sensor array without solving the inverse problem. A total of 223 million pairs of a given magnetometer's five parameters (x, y, z, θ, and ϕ) and the corresponding theoretical magnetic field signals from the coils were used to train the neural network. The training process required approximately 53 h using a commercially available GPU-equipped computer. The trained neural network was then applied to acquire the sensor geometry from magnetic field data obtained during a conventional calibration procedure for a 160-channel whole-head magnetoencephalograph system using a spherical calibration coil array. The position and orientation of each magnetometer estimated by this method deviated by an average of 0.65 mm and 0.51°, respectively, from those obtained via the conventional inverse problem approach. The acquisition of the geometry for all 160 magnetometers required less than 8 ms. With such high-speed acquisition, this approach opens possibilities for future applications in acquiring positional information of wearable sensor arrays whose structures change in real time.
获取头盔形传感器阵列中磁强计的位置、方向和灵敏度对于脑磁图中电流源的精确重建至关重要。为了确定每个磁强计的这些参数,我们使用球形校准线圈阵列。在我们之前的研究中,每个磁力计的位置和方向都是通过数值搜索来确定的,通过数值搜索来最小化每个线圈的理论磁场信号与磁力计检测到的测量信号之间的差异。在这项研究中,我们应用深度神经网络来估计头盔形传感器阵列中每个磁强计的位置和方向,而不解决逆问题。给定磁力计的五个参数(x, y, z, θ和ϕ)和线圈中相应的理论磁场信号共2.23亿对用于训练神经网络。训练过程需要大约53小时使用市售的gpu配备的计算机。然后应用训练好的神经网络从常规校准过程中获得的磁场数据中获取传感器几何形状,该过程使用球形校准线圈阵列对160通道全头脑磁仪系统进行校准。用该方法估计的每个磁强计的位置和方向与传统的反问题方法分别平均偏差0.65 mm和0.51°。所有160个磁力计的几何形状的采集需要不到8毫秒。通过这种高速采集,该方法为获取结构实时变化的可穿戴传感器阵列的位置信息开辟了未来应用的可能性。
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引用次数: 0
Voltage-Modulated Magneto-Dynamics in Spin Hall Nano-Oscillators 自旋霍尔纳米振荡器的调压磁动力学
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-03-28 DOI: 10.1109/LMAG.2025.3555942
Linrong Yao;Hongchao Xie;Bin Hu;Sheng Jiang
Spin Hall nano-oscillators (SHNOs) have garnered attention due to their broad application prospects in microwave generators, information storage, and artificial intelligence computing. This has necessitated the development of efficient methods to control the magneto-dynamics of SHNOs. Magnetic field control requires a field generator, and current control suffers from a narrow frequency range and low efficiency. We present an approach to efficiently control the SHNO magneto-dynamics, i.e., a piezoelectric-based SHNO system, to achieve voltage-modulated magneto-dynamics through magneto-electric coupling. Through micromagnetic simulations, this work demonstrates the indirect control of the magneto-dynamics by voltage-modulated magnetic anisotropy, revealing the impact of changes in magnetic anisotropy on the magneto-dynamics and the underlying physical mechanisms. This discovery enhances the degree of freedom for electrical modulation of SHNOs and contributes to developing advanced spintronic devices.
自旋霍尔纳米振荡器因其在微波发生器、信息存储和人工智能计算等方面的广泛应用前景而备受关注。这就需要开发有效的方法来控制微细微nos的磁动力学。磁场控制需要磁场发生器,而电流控制存在频率范围窄、效率低的问题。我们提出了一种有效控制SHNO磁动力学的方法,即基于压电的SHNO系统,通过磁电耦合实现电压调制的磁动力学。通过微磁模拟,本工作证明了电压调制磁各向异性对磁动力学的间接控制,揭示了磁各向异性变化对磁动力学的影响及其潜在的物理机制。这一发现提高了SHNOs电调制的自由度,有助于发展先进的自旋电子器件。
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引用次数: 0
YIG/CoFeB Bilayer Magnonic Isolator YIG/CoFeB双层磁振子
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-03-17 DOI: 10.1109/LMAG.2025.3551990
Noura Zenbaa;Khrystyna O. Levchenko;Jaganandha Panda;Kristýna Davídková;Moritz Ruhwedel;Sebastian Knauer;Morris Lindner;Carsten Dubs;Qi Wang;Michal Urbánek;Philipp Pirro;Andrii V. Chumak
We demonstrate a magnonic isolator based on a bilayer structure of yttrium iron garnet (YIG) and cobalt iron boron (CoFeB). The bilayer exhibits pronounced nonreciprocal spin-wave propagation, enabled by dipolar coupling and the magnetic properties of the two layers. The YIG layer provides low damping and efficient spin-wave propagation, whereas the CoFeB layer introduces strong magnetic anisotropy, critical for achieving the isolator functionality. Experimental results, supported by numerical simulations, show unidirectional propagation of magneto-static surface spin waves, significantly suppressing backscattered waves. This behavior was confirmed through wavevector-resolved and microfocused Brillouin light scattering measurements and is supported by numerical simulations. The developed YIG/SiO$_{2}$/CoFeB bilayer magnonic isolator demonstrates the feasibility of leveraging nonreciprocal spin-wave dynamics for functional magnonic devices, paving the way for energy-efficient, wave-based signal processing technologies.
我们展示了一种基于钇铁石榴石(YIG)和钴铁硼(CoFeB)双层结构的磁振子隔离器。由于双极偶极耦合和两层的磁性,双极层表现出明显的非互易自旋波传播。YIG层提供了低阻尼和有效的自旋波传播,而CoFeB层引入了强磁各向异性,这对实现隔离器功能至关重要。实验结果与数值模拟结果一致,表明静磁表面自旋波的单向传播对后向散射波有明显的抑制作用。通过波矢量分辨和微聚焦布里渊光散射测量证实了这种行为,并得到了数值模拟的支持。开发的YIG/SiO$_{2}$/CoFeB双层磁振子隔离器证明了利用非互易自旋波动力学用于功能磁振器件的可行性,为节能的基于波的信号处理技术铺平了道路。
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引用次数: 0
Ready-to-Use Composite Fused Deposition Modeling Filaments Produced With Polylactic Acid and Recycled Nd–Fe–B Nanocrystalline Powder for Additive Manufacturing of Bonded Magnets 用聚乳酸和回收的Nd-Fe-B纳米晶粉末制备用于粘结磁体增材制造的即用复合熔融沉积建模长丝
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-03-14 DOI: 10.1109/LMAG.2025.3551243
Gabriel M. Vieira;Marcelo A. Rosa;Paulo A. P. Wendhausen;Maximiliano D. Martins
Fused deposition modeling (FDM) is an additive manufacturing technique that has become widely used in many fields of engineering and has recently proven to be suitable for producing complex, net-shaped bonded Nd–Fe–B magnets. At the same time, recycling end-of-life magnets has been an emerging concern due to their increasing presence in current technologies and the intrinsic scarcity of rare-Earth elements, such as neodymium and praseodymium. Here, we investigated the feasibility of using recycled nanocrystalline Nd–Fe–B powders, obtained from a hydrogenation–disproportionation–desorption–recombination (HDDR) process in the preparation of FDM feedstock and subsequent printing of magnetic parts. Recycled magnetic powder was mixed with polylactic acid and extruded into filaments containing increasing volume fractions of magnetic powder. It was possible to obtain filaments containing from 6.7% to 23.6% in volume (30.4 to 65.2 wt.%) of the magnetic powder, from which parts could be printed, reaching maximum coercivity (Hcj) of 707.7 ± 3.5 kA/m, maximum remanence (Br) of 84.5 ± 0.4 mT, maximum energy product (BHmax) of 1.3 kJ/m3, and average part porosity of 42 ± 8%. Coercivity loss of about 8.6% was observed in the printed parts compared to the recycled powder (750±75 kA/m). Aging experiments showed that such loss may be a combined effect of thermal and oxidation effects of the magnetic particles during the additive manufacturing processing. The present work has demonstrated the achievement of ready-to-use, high-coercivity FDM filaments, and 3-D-printed parts using recycled Nd–Fe–B HDDR powders.
熔融沉积建模(FDM)是一种增材制造技术,已广泛应用于许多工程领域,最近被证明适用于生产复杂的网状粘结钕铁硼磁体。与此同时,回收废弃磁铁已经成为一个新兴的问题,因为它们在当前技术中的存在越来越多,而且稀土元素(如钕和镨)的内在稀缺性。在这里,我们研究了利用氢化-歧化-解吸-重组(HDDR)工艺获得的回收纳米晶Nd-Fe-B粉末制备FDM原料和随后打印磁性部件的可行性。将回收的磁粉与聚乳酸混合,挤压成含有越来越多磁粉体积分数的长丝。可以得到体积为6.7% ~ 23.6% (30.4% ~ 65.2 wt.%)的磁粉,可以打印零件,最大矫顽力(Hcj)达到707.7±3.5 kA/m,最大剩磁(Br)达到84.5±0.4 mT,最大能量积(BHmax)达到1.3 kJ/m3,平均零件孔隙率为42±8%。与回收粉末(750±75 kA/m)相比,打印部件的矫顽力损失约为8.6%。老化实验表明,这种损耗可能是增材制造过程中磁性颗粒的热效应和氧化效应的共同作用。目前的工作已经证明了即用型、高矫顽力FDM长丝的成就,以及使用回收的Nd-Fe-B HDDR粉末的3d打印部件。
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引用次数: 0
Tuning Magnetic Behavior of Lanthanum-Substituted Gd3Fe5O12: An Experimental Study 镧取代Gd3Fe5O12调谐磁性能的实验研究
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-03-14 DOI: 10.1109/LMAG.2025.3551266
Aakansha Aakansha;Seenipandian Ravi
This letter covers the structural and magnetic properties of lanthanum-substituted gadolinium iron garnet (GIG) (Gd3-xLaxFe5O12), where the La ion was substituted at the Gd site. X-ray diffraction analysis suggested that the synthesized samples possess cubic crystal structure with an increase in lattice constant with La substitution. The crystallite size was estimated through the Williamson–Hall plot analysis and found to increase from 50.577 for ${x}$ = 0 to 67.343 nm for ${x}$ = 0.4. The room temperature magnetization value was increasing from 0.162 to 2.536 emu/g from pure to La-substituted GIG. These materials display a ferrimagnetic to paramagnetic phase transition as high temperature rose from 565 to 573 K, which is attributed to the high superexchange interaction between Fe3+ ions. In addition to transition, temperature magnetic compensation was also observed below room temperature. The coercivity of the samples was estimated from the room temperature hysteresis curve, which shows soft ferrimagnetic behavior. The stable crystal structure, low magnetic compensation, low coercive field, and high transition temperature make these materials suitable for communication devices.
这封信涵盖了镧取代钆铁石榴石(GIG) (Gd3-xLaxFe5O12)的结构和磁性能,其中La离子在Gd位点被取代。x射线衍射分析表明,合成的样品具有立方晶体结构,镧取代使晶格常数增加。通过Williamson-Hall图分析估计晶体尺寸,发现当${x}$ = 0时,晶体尺寸从50.577 nm增加到${x}$ = 0.4时,晶体尺寸增加到67.343 nm。从纯GIG到la取代GIG,室温磁化值从0.162 emu/g增加到2.536 emu/g。当温度从565 K升高到573 K时,这些材料表现出铁磁性到顺磁性的相变,这是由于Fe3+离子之间的高超交换相互作用所致。除了相变外,室温下还观察到温度磁补偿。根据室温磁滞曲线估计了样品的矫顽力,显示出软铁磁行为。稳定的晶体结构、低磁补偿、低矫顽力场和高转变温度使这些材料适合用于通信器件。
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引用次数: 0
A Tunable Magnetic Bias Circuit With Zero Static Power Consumption 一种零静态功耗的可调谐偏磁电路
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-18 DOI: 10.1109/LMAG.2025.3541915
Yixiao Ding;Xuan Wang;Mark G. Allen
Quasi-static magnetic fields can be used to modulate the magnetic and electrical properties of many magnetic materials, thereby enabling the operation of various magnetic devices, such as multiferroic magnetic field sensors and ferro/ferrimagnetic magneto-static wave filters. We present a magnetic circuit designed to produce a tunable dc magnetic bias field and detail its operating principle. The magnitude of the bias field can be electrically tuned to achieve a desired magnetic field; when not being switched, the achieved field is maintained with zero static power consumption. The magnetic circuit comprises two distinct types of permanent magnets: an NdFeB magnet with relatively high coercivity and an AlNiCo V magnet with relatively low coercivity combined with a tuning coil for adjusting its magnetization. Soft magnetic yoke pieces link the permanent magnets and also define an air gap. Pulses of current through the coil will adjust the remanence of the AlNiCo magnet, thereby changing the flux and field in the air gap. A magnetic bias circuit with a compact volume of 0.27 cm3 has been constructed, providing an adjustable dc magnetic field with a tuning range of 3.7 to 288.5 mT within a 1 mm air gap.
准静态磁场可以用来调制许多磁性材料的磁性和电学性质,从而使各种磁性器件,如多铁磁场传感器和铁磁/铁磁静磁波滤波器的工作成为可能。提出了一种产生可调谐直流偏磁场的磁路,并详细介绍了其工作原理。可以电调谐偏置场的大小以获得所需的磁场;当不被切换时,实现的场保持零静态功耗。磁路由两种不同类型的永磁体组成:具有较高矫顽力的钕铁硼磁体和具有相对较低矫顽力的铝镍钴V磁体,并结合用于调节其磁化强度的调谐线圈。软磁轭片连接永磁体,也定义了一个气隙。通过线圈的电流脉冲将调整铝镍钴磁铁的剩余物,从而改变气隙中的磁通和场。构建了一个体积为0.27 cm3的紧凑偏磁电路,在1 mm气隙内提供可调的直流磁场,调谐范围为3.7至288.5 mT。
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引用次数: 0
About the Cover 关于封面
IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-12 DOI: 10.1109/LMAG.2024.3510493
{"title":"About the Cover","authors":"","doi":"10.1109/LMAG.2024.3510493","DOIUrl":"https://doi.org/10.1109/LMAG.2024.3510493","url":null,"abstract":"","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"C4-C4"},"PeriodicalIF":1.1,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10883667","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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IEEE Magnetics Letters
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