Pub Date : 2025-12-09DOI: 10.1109/LPT.2025.3642043
Wangping Wang;Huiye Qiu;Jinkai Lan
The avalanche ruggedness of GaN ultraviolet avalanche photodiodes (UV-APDs), critical for reliable Geiger-mode operation, is systematically evaluated for the first time via an accelerated stress methodology. APDs with an ultra-shallow bevel edge termination (2.5°) exhibit superior ruggedness, withstanding a static avalanche current density of $10^{2}$ A/cm2 at room temperature and accelerated avalanche stress at $175~^{circ }$ C. In contrast, inherent instabilities are revealed in APDs with a conventional-shallow (12°) bevel edge. Degradation modes observed under stress included avalanche current increase after room-temperature stress and destructive breakdown at high temperature. The degradation mechanism is attributed to the trap-assisted charge dynamics at the mesa sidewall, a process driven by the high local electric field at the mesa sidewall. This degradation is effectively mitigated by the ultra-shallow 2.5°-bevel structure, which significantly reduces the sidewall electric field. The resulting high stability establishes a new benchmark for GaN APD reliability.
GaN紫外雪崩光电二极管（uv - apd）的雪崩坚固性是可靠的盖格模式工作的关键，首次通过加速应力方法系统地评估了雪崩坚固性。在室温下，具有超浅斜角（2.5°）的apd可以承受静态雪崩电流密度为$10^{2}$ a /cm2，以及在$175~^{circ}$ c的加速雪崩应力。相比之下，具有常规浅斜角（12°）的apd则显示出固有的不稳定性。在应力作用下观察到的降解模式包括室温应力作用后雪崩电流增加和高温破坏击穿。该降解机制归因于台地侧壁的陷阱辅助电荷动力学，这一过程是由台地侧壁的高局域电场驱动的。超浅2.5°斜角结构有效地缓解了这种退化，显著降低了侧壁电场。由此产生的高稳定性为GaN APD可靠性建立了新的基准。
{"title":"Rugged GaN UV-APDs via Engineered Bevel-Edge Angle Under Accelerated Avalanche Stress","authors":"Wangping Wang;Huiye Qiu;Jinkai Lan","doi":"10.1109/LPT.2025.3642043","DOIUrl":"https://doi.org/10.1109/LPT.2025.3642043","url":null,"abstract":"The avalanche ruggedness of GaN ultraviolet avalanche photodiodes (UV-APDs), critical for reliable Geiger-mode operation, is systematically evaluated for the first time via an accelerated stress methodology. APDs with an ultra-shallow bevel edge termination (2.5°) exhibit superior ruggedness, withstanding a static avalanche current density of <inline-formula> <tex-math>$10^{2}$ </tex-math></inline-formula> A/cm2 at room temperature and accelerated avalanche stress at <inline-formula> <tex-math>$175~^{circ }$ </tex-math></inline-formula>C. In contrast, inherent instabilities are revealed in APDs with a conventional-shallow (12°) bevel edge. Degradation modes observed under stress included avalanche current increase after room-temperature stress and destructive breakdown at high temperature. The degradation mechanism is attributed to the trap-assisted charge dynamics at the mesa sidewall, a process driven by the high local electric field at the mesa sidewall. This degradation is effectively mitigated by the ultra-shallow 2.5°-bevel structure, which significantly reduces the sidewall electric field. The resulting high stability establishes a new benchmark for GaN APD reliability.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 5","pages":"345-348"},"PeriodicalIF":2.5,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145830923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Broadband optical waveguiding in an optical nanofiber can give great versatility to nanofiber-optic technology. To date, high-transmittance single-mode waveguiding in a single optical nanofiber in the full visible spectral range remains challenging. Here, by using a commercially available silica fiber with a single-mode cut-off wavelength smaller than 400 nm (Nufern, 405-HP) as the fiber preform, and taper-drawing the fiber into a nanofiber with a standard fabrication technique, we show that the nanofiber can support broadband single-mode waveguiding with high optical transmittance in the full visible spectral range. Quantitatively, a silica nanofiber with a uniform diameter between 210 and 270 nm can support single-mode optical waveguiding with transmittance higher than 96% (i.e., less than 0.18 dB in loss) from 400 to 800-nm wavelength. Such a broadband single-mode nanofiber may find applications including near-field optical coupling, optical interconnection, optical sensing, atom optics and fiber lasers in the broad visible spectral range.
{"title":"High-Transmittance Single-Mode Optical Nanofibers in the Full Visible Spectral Range","authors":"Keying Liu;Jianbin Zhang;Xinyue Zhang;Wei Fang;Xin Guo;Limin Tong","doi":"10.1109/LPT.2025.3642181","DOIUrl":"https://doi.org/10.1109/LPT.2025.3642181","url":null,"abstract":"Broadband optical waveguiding in an optical nanofiber can give great versatility to nanofiber-optic technology. To date, high-transmittance single-mode waveguiding in a single optical nanofiber in the full visible spectral range remains challenging. Here, by using a commercially available silica fiber with a single-mode cut-off wavelength smaller than 400 nm (Nufern, 405-HP) as the fiber preform, and taper-drawing the fiber into a nanofiber with a standard fabrication technique, we show that the nanofiber can support broadband single-mode waveguiding with high optical transmittance in the full visible spectral range. Quantitatively, a silica nanofiber with a uniform diameter between 210 and 270 nm can support single-mode optical waveguiding with transmittance higher than 96% (i.e., less than 0.18 dB in loss) from 400 to 800-nm wavelength. Such a broadband single-mode nanofiber may find applications including near-field optical coupling, optical interconnection, optical sensing, atom optics and fiber lasers in the broad visible spectral range.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 6","pages":"382-385"},"PeriodicalIF":2.5,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145808594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-28DOI: 10.1109/LPT.2025.3638626
Dini Pratiwi;Aleksandr Donodin;Ian Phillips;Wladek Forysiak;Mingming Tan
We compare the long-haul coherent transmission performance of 30 GBaud DP-16-QAM WDM signals using five different S-band optical amplifiers: a thulium doped fiber amplifier (TDFA), a distributed Raman amplifier (DRA) and three different lumped Raman amplifiers (LRAs) using 10 km inverse dispersion fiber (IDF), 10 km, and 5 km Raman optical fibers (ROFs). Over 1050 km standard single-mode fiber (SSMF), the DRA performed the best with an SNR of 14.2 dB at the optimum launch power of −2.3 dBm, followed by the TDFA with an SNR of 13.0 dB and the LRA using 10 km IDF with 11.6 dB of SNR.
{"title":"Comparison of S-Band Doped Fiber Amplifier and Raman Amplifiers in Long-Haul Coherent Transmission","authors":"Dini Pratiwi;Aleksandr Donodin;Ian Phillips;Wladek Forysiak;Mingming Tan","doi":"10.1109/LPT.2025.3638626","DOIUrl":"https://doi.org/10.1109/LPT.2025.3638626","url":null,"abstract":"We compare the long-haul coherent transmission performance of 30 GBaud DP-16-QAM WDM signals using five different S-band optical amplifiers: a thulium doped fiber amplifier (TDFA), a distributed Raman amplifier (DRA) and three different lumped Raman amplifiers (LRAs) using 10 km inverse dispersion fiber (IDF), 10 km, and 5 km Raman optical fibers (ROFs). Over 1050 km standard single-mode fiber (SSMF), the DRA performed the best with an SNR of 14.2 dB at the optimum launch power of −2.3 dBm, followed by the TDFA with an SNR of 13.0 dB and the LRA using 10 km IDF with 11.6 dB of SNR.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 5","pages":"349-352"},"PeriodicalIF":2.5,"publicationDate":"2025-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145830927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we present the highly temperature-stable 850-nm oxide-aperture vertical cavity surface-emitting lasers with via-hole device structure. The temperature dependence of static and dynamic characteristics of devices are investigated. The output power of 7.13 mW saturating at high thermal rollover current of 12.5 mA at $29~^{circ }$ C and only 2.7 GHz 3-dB optical bandwidth drop over the temperature range from 29 to $85~^{circ }$ C is observed for the VCSEL with a $sim ~4.6~mu $ m oxide-aperture diameter. The thermal resistance of the VCSELs and the internal device temperature are analysed by using the measured optical spectra. The results clearly indicate that the high temperature stability of our devices can be attributed to both improved thermal conductivity benefited from via-hole device structure and optimized quantum well gain-to-etalon wavelength offset.
{"title":"High Temperature Stable 850-nm VCSELs With Improved Device Thermal Conductivity","authors":"Yun Sun;Wenjing Jiang;Meng Xun;Guanzhong Pan;Bingxin Yao;Runze Zhang;Weichao Wu;Dexin Wu","doi":"10.1109/LPT.2025.3637572","DOIUrl":"https://doi.org/10.1109/LPT.2025.3637572","url":null,"abstract":"In this work, we present the highly temperature-stable 850-nm oxide-aperture vertical cavity surface-emitting lasers with via-hole device structure. The temperature dependence of static and dynamic characteristics of devices are investigated. The output power of 7.13 mW saturating at high thermal rollover current of 12.5 mA at <inline-formula> <tex-math>$29~^{circ }$ </tex-math></inline-formula>C and only 2.7 GHz 3-dB optical bandwidth drop over the temperature range from 29 to <inline-formula> <tex-math>$85~^{circ }$ </tex-math></inline-formula>C is observed for the VCSEL with a <inline-formula> <tex-math>$sim ~4.6~mu $ </tex-math></inline-formula> m oxide-aperture diameter. The thermal resistance of the VCSELs and the internal device temperature are analysed by using the measured optical spectra. The results clearly indicate that the high temperature stability of our devices can be attributed to both improved thermal conductivity benefited from via-hole device structure and optimized quantum well gain-to-etalon wavelength offset.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 5","pages":"309-312"},"PeriodicalIF":2.5,"publicationDate":"2025-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-25DOI: 10.1109/LPT.2025.3636731
Chaoyu Lin;Junwei Hu;Hua Yang;Xiaoyan Yi;Jinmin Li;Liancheng Wang
Micro-LEDs is regarded as the next-generation revolutionary display technology due to its advantages such as long life, high efficiency, high brightness and high contrast. Yet its inherent Lambertian radiation characteristics and relatively broader emission spectrum result in low optical coupling efficiency and diffraction dispersion-related “rainbow” phenomenon when combined with a waveguide combiner in AR application. We have reported resonant cavity (RC) Micro-LEDs with a reduced divergence angle and narrow spectrum. This work further develops an optimized RC Micro-LEDs with a ITO shoulder, thus significantly improves the yield. Then RC Micro-LEDs with different die shape and size was systematically analyzed. Our work should advance the application of Micro-LED, especially for AR application.
{"title":"Effect of Die Shape and Size on Performance of GaN-Based Resonator Micro-LEDs","authors":"Chaoyu Lin;Junwei Hu;Hua Yang;Xiaoyan Yi;Jinmin Li;Liancheng Wang","doi":"10.1109/LPT.2025.3636731","DOIUrl":"https://doi.org/10.1109/LPT.2025.3636731","url":null,"abstract":"Micro-LEDs is regarded as the next-generation revolutionary display technology due to its advantages such as long life, high efficiency, high brightness and high contrast. Yet its inherent Lambertian radiation characteristics and relatively broader emission spectrum result in low optical coupling efficiency and diffraction dispersion-related “rainbow” phenomenon when combined with a waveguide combiner in AR application. We have reported resonant cavity (RC) Micro-LEDs with a reduced divergence angle and narrow spectrum. This work further develops an optimized RC Micro-LEDs with a ITO shoulder, thus significantly improves the yield. Then RC Micro-LEDs with different die shape and size was systematically analyzed. Our work should advance the application of Micro-LED, especially for AR application.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 5","pages":"305-308"},"PeriodicalIF":2.5,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145712558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Compared to traditional electronic logic gates, optoelectronic logic gates (OELGs) demonstrate significant potential to be a candidate of the key components for next-generation logic circuits. However, research on OELGs is still in its early stages. Here, we present an optically controlled OELG based on a single GaN-based ultraviolet photodetector (UV PD). This logic gate utilizes the output current as the readout signal to determine and and or logic operations. The type of logic gate is controlled by the intensity of the optical input signal. We have developed a SPICE model of the UV PD and validated the effectiveness of the proposed OELG through HSPICE simulations and experimental measurements. This work provides a new approach for the implementation of OELGs.
{"title":"Optically Controlled Optoelectronic Logic Gates Utilizing a Single Ultraviolet Photodetector","authors":"Haoyan Liu;Yuelin Liu;Naizhe Li;Chunshuang Chu;Kangkai Tian;Fuping Huang;Yonghui Zhang;Zi-Hui Zhang","doi":"10.1109/LPT.2025.3636611","DOIUrl":"https://doi.org/10.1109/LPT.2025.3636611","url":null,"abstract":"Compared to traditional electronic logic gates, optoelectronic logic gates (OELGs) demonstrate significant potential to be a candidate of the key components for next-generation logic circuits. However, research on OELGs is still in its early stages. Here, we present an optically controlled OELG based on a single GaN-based ultraviolet photodetector (UV PD). This logic gate utilizes the output current as the readout signal to determine <sc>and</small> and <sc>or</small> logic operations. The type of logic gate is controlled by the intensity of the optical input signal. We have developed a SPICE model of the UV PD and validated the effectiveness of the proposed OELG through HSPICE simulations and experimental measurements. This work provides a new approach for the implementation of OELGs.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 5","pages":"333-336"},"PeriodicalIF":2.5,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, we demonstrate a silicon-based carrier-injection optical single-sideband (OSSB) modulator featuring a double-parallel Mach-Zehnder interferometer architecture. This design simultaneously achieves ultra-low driving voltage and high sideband suppression ratio (SSR). By optimizing the p- and n-doping profiles, the device achieves a V ${}_{pi }~cdot $ L of approximately 0.0375 V$cdot $ cm. In OSSB operation, the unwanted sideband is suppressed by around 33 dB, highlighting the modulator’s exceptional sideband suppression. These characteristics—low driving voltage, low loss, and high suppression—make the device highly suitable for homodyne phase-locking, on-chip sensing, and other integrated photonic applications.
在本文中，我们展示了一种基于硅的载流子注入光学单边带（OSSB）调制器，该调制器具有双并行马赫-曾德尔干涉仪结构。该设计同时实现了超低驱动电压和高边带抑制比（SSR）。通过优化p掺杂和n掺杂谱，器件的V ${}_{pi}~cdot $ L约为0.0375 V $cdot $ cm，在OSSB工作中，不需要的边带被抑制约33 dB，突出了调制器出色的边带抑制能力。这些特性-低驱动电压，低损耗和高抑制-使该器件非常适合于零差锁相，片上传感和其他集成光子应用。
{"title":"Compact Single-Sideband Modulator With High Side-Mode Rejection Ratio and Low Power Consumption","authors":"Xiongping Bao;Xiao Chen;Runwei Zhou;Yuheng Wu;Wenjun Li;Wenbing Jiang;Libing Zhou","doi":"10.1109/LPT.2025.3636510","DOIUrl":"https://doi.org/10.1109/LPT.2025.3636510","url":null,"abstract":"In this article, we demonstrate a silicon-based carrier-injection optical single-sideband (OSSB) modulator featuring a double-parallel Mach-Zehnder interferometer architecture. This design simultaneously achieves ultra-low driving voltage and high sideband suppression ratio (SSR). By optimizing the p- and n-doping profiles, the device achieves a V <inline-formula> <tex-math>${}_{pi }~cdot $ </tex-math></inline-formula>L of approximately 0.0375 V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm. In OSSB operation, the unwanted sideband is suppressed by around 33 dB, highlighting the modulator’s exceptional sideband suppression. These characteristics—low driving voltage, low loss, and high suppression—make the device highly suitable for homodyne phase-locking, on-chip sensing, and other integrated photonic applications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 6","pages":"386-389"},"PeriodicalIF":2.5,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145808579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-25DOI: 10.1109/LPT.2025.3636736
Zhaoyi Liu;Feng Wang;Jitao Cao;Wenzhe Zhao;Pan Dai;Xiangfei Chen;Yanqing Lu
Linear frequency sweep of lasers is essential for high-speed optical communications, frequency-modulated continuous-wave (FMCW) light detection and ranging (LiDAR), and fiber sensing. Existing linearization methods suffer from structural complexity or calibration dependence, limiting chip-scale applicability. This letter presents a Dual Long short-term memory (LSTM)-based inverse system for nonlinear compensation, using two sub-LSTMs to model the distinct dynamics of rising and falling edges. Experiments show the method reduces relative residual nonlinearity by 96% and 60% for falling and rising ramps, respectively, outperforming conventional LSTM by 80%. Its compact, multi-task capability design enables simple, chip-level implementation for optical communications, sensing, and LiDAR.
{"title":"Dual-LSTM-Based Inverse System Control for Laser Nonlinear Compensation","authors":"Zhaoyi Liu;Feng Wang;Jitao Cao;Wenzhe Zhao;Pan Dai;Xiangfei Chen;Yanqing Lu","doi":"10.1109/LPT.2025.3636736","DOIUrl":"https://doi.org/10.1109/LPT.2025.3636736","url":null,"abstract":"Linear frequency sweep of lasers is essential for high-speed optical communications, frequency-modulated continuous-wave (FMCW) light detection and ranging (LiDAR), and fiber sensing. Existing linearization methods suffer from structural complexity or calibration dependence, limiting chip-scale applicability. This letter presents a Dual Long short-term memory (LSTM)-based inverse system for nonlinear compensation, using two sub-LSTMs to model the distinct dynamics of rising and falling edges. Experiments show the method reduces relative residual nonlinearity by 96% and 60% for falling and rising ramps, respectively, outperforming conventional LSTM by 80%. Its compact, multi-task capability design enables simple, chip-level implementation for optical communications, sensing, and LiDAR.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 5","pages":"317-320"},"PeriodicalIF":2.5,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents a comparative study of phase transition behaviour and near-infrared (NIR) regulation of vanadium dioxide (VO2) thin films (TFs) and nanocolumnar (NC) structures fabricated via glancing angle deposition (GLAD) using electron-beam evaporation. Optical reflectance spectra demonstrate enhanced and reverse NIR modulation and suppressed specular interference in NCs compared to TFs. Raman spectroscopic analysis confirms the formation of monoclinic (M1) VO2 in both morphologies, while in NCs partial stabilization of the rutile (R) phase at room temperature is observed. Reduction in transition temperature, Tc ($sim 4~^{circ }$ C) and hysteresis width ($Delta $ Tc) is confirmed from both temperature dependent optical and electrical studies. These findings offer an alternative approach for the development of smart radiative devices and other optoelectronic and thermochromic applications by nano-architecting of VO2 using GLAD.
{"title":"Enhanced NIR Modulation of GLAD-Deposited VO2 Nanocolumns for Smart Radiative Applications","authors":"Subrata Saha;Iman Biswas;Subhasish Chanda;Nilanjan Halder;Arjun Dey;Aniruddha Mondal","doi":"10.1109/LPT.2025.3637163","DOIUrl":"https://doi.org/10.1109/LPT.2025.3637163","url":null,"abstract":"This letter presents a comparative study of phase transition behaviour and near-infrared (NIR) regulation of vanadium dioxide (VO2) thin films (TFs) and nanocolumnar (NC) structures fabricated via glancing angle deposition (GLAD) using electron-beam evaporation. Optical reflectance spectra demonstrate enhanced and reverse NIR modulation and suppressed specular interference in NCs compared to TFs. Raman spectroscopic analysis confirms the formation of monoclinic (M1) VO2 in both morphologies, while in NCs partial stabilization of the rutile (R) phase at room temperature is observed. Reduction in transition temperature, Tc (<inline-formula> <tex-math>$sim 4~^{circ }$ </tex-math></inline-formula>C) and hysteresis width (<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula> Tc) is confirmed from both temperature dependent optical and electrical studies. These findings offer an alternative approach for the development of smart radiative devices and other optoelectronic and thermochromic applications by nano-architecting of VO2 using GLAD.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 5","pages":"325-328"},"PeriodicalIF":2.5,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-25DOI: 10.1109/LPT.2025.3636567
Guangyu Luan;Chenggen Quan
Here, we report an asymmetric single-channel color image cryptosystem that employs phase retrieval based on an iterative phase-truncation (PT) scheme. For the proposed encryption process, colored plaintext is converted to the corresponding indexed image, and then the two-phase information is iteratively updated to construct one private key mask and one ciphertext mask. The scheme is an asymmetric single-channel encryption method for color image. In contrast to other PT-based techniques, there is no information leakage issue in our scheme. At the same time, with three sensitive additional keys, viz., the two diffraction distances and the illuminating wavelength, the encryption security is significantly strengthened. The scheme is also resistant to several attacks, and simulation results demonstrate its reliability and capability.
{"title":"Asymmetric Single-Channel Color Image Cryptosystem Based on an Iterative Phase-Truncation Scheme","authors":"Guangyu Luan;Chenggen Quan","doi":"10.1109/LPT.2025.3636567","DOIUrl":"https://doi.org/10.1109/LPT.2025.3636567","url":null,"abstract":"Here, we report an asymmetric single-channel color image cryptosystem that employs phase retrieval based on an iterative phase-truncation (PT) scheme. For the proposed encryption process, colored plaintext is converted to the corresponding indexed image, and then the two-phase information is iteratively updated to construct one private key mask and one ciphertext mask. The scheme is an asymmetric single-channel encryption method for color image. In contrast to other PT-based techniques, there is no information leakage issue in our scheme. At the same time, with three sensitive additional keys, viz., the two diffraction distances and the illuminating wavelength, the encryption security is significantly strengthened. The scheme is also resistant to several attacks, and simulation results demonstrate its reliability and capability.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 5","pages":"297-300"},"PeriodicalIF":2.5,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145712564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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