Pub Date : 2024-07-24DOI: 10.1109/LPT.2024.3432912
Chong Niu;Xiaoyang Li;Jiabin Wang;Jiarui Chen;Yanru Kou;Xinyu Yang;Chunlian Lu;Tao Geng;Weimin Sun
In this letter, a novel shrinking long period fiber grating (S-LPFG) is designed. This strain sensor is fabricated through mechanical polishing and arc-discharging, allowing for certain control over its sensitivity to strain. The single-mode fiber (SMF) is first preprocessed into a D-shaped fiber (DSF) through polishing. Then, a periodic melting-induced shrinking is applied to the fiber through arc-discharging modulation. The polishing and shrinking enhance the asymmetry of the single-mode fiber. The discharge modulation enables convenient control of the mode order coupling efficiency and the shrinking level of the sensor, thereby effectively controlling and improving the strain sensitivity. The experimental results indicate that strain sensors with three levels of sensitivity, namely high, medium, and low sensitivity, are obtained by controlling the number of discharges. The high strain sensitivity reaches an ultra-high value of 174 pm/ $mu varepsilon $ within the range of $0- 100 ; mu varepsilon $ . These adjustable sensitivity sensors have great potential for various application scenarios.
在这封信中，我们设计了一种新型收缩长周期光纤光栅（S-LPFG）。这种应变传感器是通过机械抛光和电弧放电制成的，因此可以在一定程度上控制其对应变的灵敏度。首先通过抛光将单模光纤（SMF）预处理成 D 形光纤（DSF）。然后，通过电弧放电调制对光纤进行周期性熔融诱导收缩。抛光和收缩增强了单模光纤的不对称性。放电调制可以方便地控制传感器的模序耦合效率和收缩程度，从而有效地控制和提高应变灵敏度。实验结果表明，通过控制放电次数，可获得高、中、低三个灵敏度等级的应变传感器。高灵敏度应变传感器在 0-100 美元的范围内达到了 174 pm/ mu varepsilon 美元的超高灵敏度值。 这些灵敏度可调的传感器在各种应用场景中具有巨大的潜力。
{"title":"Sensitivity-Adjustable Strain Sensor Based on Shrinking Long Period Fiber Grating","authors":"Chong Niu;Xiaoyang Li;Jiabin Wang;Jiarui Chen;Yanru Kou;Xinyu Yang;Chunlian Lu;Tao Geng;Weimin Sun","doi":"10.1109/LPT.2024.3432912","DOIUrl":"10.1109/LPT.2024.3432912","url":null,"abstract":"In this letter, a novel shrinking long period fiber grating (S-LPFG) is designed. This strain sensor is fabricated through mechanical polishing and arc-discharging, allowing for certain control over its sensitivity to strain. The single-mode fiber (SMF) is first preprocessed into a D-shaped fiber (DSF) through polishing. Then, a periodic melting-induced shrinking is applied to the fiber through arc-discharging modulation. The polishing and shrinking enhance the asymmetry of the single-mode fiber. The discharge modulation enables convenient control of the mode order coupling efficiency and the shrinking level of the sensor, thereby effectively controlling and improving the strain sensitivity. The experimental results indicate that strain sensors with three levels of sensitivity, namely high, medium, and low sensitivity, are obtained by controlling the number of discharges. The high strain sensitivity reaches an ultra-high value of 174 pm/\u0000<inline-formula> <tex-math>$mu varepsilon $ </tex-math></inline-formula>\u0000 within the range of \u0000<inline-formula> <tex-math>$0- 100 ; mu varepsilon $ </tex-math></inline-formula>\u0000. These adjustable sensitivity sensors have great potential for various application scenarios.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141770036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-16DOI: 10.1109/LPT.2024.3427809
Yuda Wu;Li Deng;Lijie Chen;Wenqing Liu
The microwave band exhibits structured beams, such as orbital angular momentum (OAM) beams and Airy beams, which have attracted the interest of many researchers. However, most structured microwave generation arrays can only produce a single type of beam. This study proposes a three-functional multiplexing metasurface based on the principles of circular polarization decoupling and Pancharatnam-Berry (PB) phase. At 10.5 GHz, when illuminated by different circular polarized (CP) waves, this metasurface generates output waves that can separate OAM beams, spiral beams, and self-focusing Airy beams based on their polarization states. This metasurface holds broad applications in high-performance near-field wireless communications.
{"title":"Microwave Band Polarization-Decoupled Multi-Structured Waves Generation Metasurface","authors":"Yuda Wu;Li Deng;Lijie Chen;Wenqing Liu","doi":"10.1109/LPT.2024.3427809","DOIUrl":"10.1109/LPT.2024.3427809","url":null,"abstract":"The microwave band exhibits structured beams, such as orbital angular momentum (OAM) beams and Airy beams, which have attracted the interest of many researchers. However, most structured microwave generation arrays can only produce a single type of beam. This study proposes a three-functional multiplexing metasurface based on the principles of circular polarization decoupling and Pancharatnam-Berry (PB) phase. At 10.5 GHz, when illuminated by different circular polarized (CP) waves, this metasurface generates output waves that can separate OAM beams, spiral beams, and self-focusing Airy beams based on their polarization states. This metasurface holds broad applications in high-performance near-field wireless communications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141717623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, we report the fabrication of Uni-travelling-carrier photodiode (UTC-PDs) for mm-wave applications. For the fabricated PDs, the area of the p electrode is smaller than that of the absorption area. Though this leads to a response roll off when the frequency is below 3.5 GHz, a higher impedance of the PD can be obtained, which leads to a higher RF power output for a $50~Omega $ load resistance. For the PD having $50times 4~mu $ m2 absorption area and $46times 2.5~mu $ m2 p electrode area, the measured RF output power at 6 mA photocurrent, −2V bias and 15 GHz is 0.2 dBm. The ideal RF output power for a PD at this current is 0.35 dBm, which is only 0.15 dB higher than the measured RF power, indicating a high RF power output efficiency.
{"title":"Fabrication of UTC-PDs Having High RF Power Output Efficiency","authors":"Qi Li;Xin Zhou;Huan Li;Zihao Liu;Tao Xiu;Yuan Yao;Song Liang","doi":"10.1109/LPT.2024.3427723","DOIUrl":"10.1109/LPT.2024.3427723","url":null,"abstract":"In this letter, we report the fabrication of Uni-travelling-carrier photodiode (UTC-PDs) for mm-wave applications. For the fabricated PDs, the area of the p electrode is smaller than that of the absorption area. Though this leads to a response roll off when the frequency is below 3.5 GHz, a higher impedance of the PD can be obtained, which leads to a higher RF power output for a \u0000<inline-formula> <tex-math>$50~Omega $ </tex-math></inline-formula>\u0000 load resistance. For the PD having \u0000<inline-formula> <tex-math>$50times 4~mu $ </tex-math></inline-formula>\u0000m2 absorption area and \u0000<inline-formula> <tex-math>$46times 2.5~mu $ </tex-math></inline-formula>\u0000m2 p electrode area, the measured RF output power at 6 mA photocurrent, −2V bias and 15 GHz is 0.2 dBm. The ideal RF output power for a PD at this current is 0.35 dBm, which is only 0.15 dB higher than the measured RF power, indicating a high RF power output efficiency.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141717627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-15DOI: 10.1109/LPT.2024.3428867
Alessandro Brugnoni;Kyle Bottrill;Valerio Vitali;A. Emre Kaplan;Michele Re;Cosimo Lacava;Periklis Petropoulos;Ilaria Cristiani
A promising technique to generate on-chip THz signals relies on the synthesis of a tone out of heterodyne interference of two frequency-spaced semiconductor lasers. Still the thermal cross-talk deriving from the integration of multiple sub-THz signals may be detrimental on the long-term scale, strongly affecting the working frequencies of the circuit. In this letter, a flexible generation of a beat note at a multiple of 50 GHz and its stabilisation in the frequency domain through an integrated silicon nitride high Q resonator-based locker are reported. As a field-test, two generated beat note signals at 100 and 150 GHz, respectively, were launched into a 183.8 km long dark fibre network. To evaluate the frequency locker system robustness, an external frequency drift of -125 MHz/hour that mimicked a thermal drift (~2°C/hour) was applied to one laser. The integrated apparatus allows the stabilisation of the generated frequency tone, with a maximum variation of $pm ~30$ MHz around the nominal value. In principle, the adopted free-dispersion design of the SiN waveguide makes possible to place two spectral lines far enough to generate thermally stable THz-waves.
{"title":"Flexible Generation of Optically-Carried Sub-THz Beat Notes Stabilized Through an Integrated SiN Frequency Locker","authors":"Alessandro Brugnoni;Kyle Bottrill;Valerio Vitali;A. Emre Kaplan;Michele Re;Cosimo Lacava;Periklis Petropoulos;Ilaria Cristiani","doi":"10.1109/LPT.2024.3428867","DOIUrl":"10.1109/LPT.2024.3428867","url":null,"abstract":"A promising technique to generate on-chip THz signals relies on the synthesis of a tone out of heterodyne interference of two frequency-spaced semiconductor lasers. Still the thermal cross-talk deriving from the integration of multiple sub-THz signals may be detrimental on the long-term scale, strongly affecting the working frequencies of the circuit. In this letter, a flexible generation of a beat note at a multiple of 50 GHz and its stabilisation in the frequency domain through an integrated silicon nitride high Q resonator-based locker are reported. As a field-test, two generated beat note signals at 100 and 150 GHz, respectively, were launched into a 183.8 km long dark fibre network. To evaluate the frequency locker system robustness, an external frequency drift of -125 MHz/hour that mimicked a thermal drift (~2°C/hour) was applied to one laser. The integrated apparatus allows the stabilisation of the generated frequency tone, with a maximum variation of \u0000<inline-formula> <tex-math>$pm ~30$ </tex-math></inline-formula>\u0000 MHz around the nominal value. In principle, the adopted free-dispersion design of the SiN waveguide makes possible to place two spectral lines far enough to generate thermally stable THz-waves.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141717625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-15DOI: 10.1109/LPT.2024.3427699
Xin Xu;Siwei Liu;Xin Fu;Jiaqi Niu;Lin Yang
We designed and experimentally demonstrated the dual-mode variable optical attenuator on the silicon-on-insulator platform. The mode-insensitive Mach-Zehnder interferometer structure is achieved by optimizing the initial phase difference, the splitting coefficient of dual-mode splitters, and the thermal modulation efficiency of the phase shifters, ensuring synchronous attenuation of the ${mathrm {TE}}_{0}$ and ${mathrm {TE}}_{1}$ modes. At 1550 nm wavelength, experimental results show that the maximum attenuation depths of ${mathrm {TE}}_{0}$ and ${mathrm {TE}}_{1}$ modes are 31.33 dB and 20.81 dB, respectively, with driving powers of 23.4 mW and 22.1 mW. Additionally, the measured response time of both modes is under $26~mu $ s. The device is promising for applications in mode-insensitive optical interconnects.
{"title":"Dual-Mode Variable Optical Attenuator Based on Balanced Multimode Power Splitters on SOI Platform","authors":"Xin Xu;Siwei Liu;Xin Fu;Jiaqi Niu;Lin Yang","doi":"10.1109/LPT.2024.3427699","DOIUrl":"10.1109/LPT.2024.3427699","url":null,"abstract":"We designed and experimentally demonstrated the dual-mode variable optical attenuator on the silicon-on-insulator platform. The mode-insensitive Mach-Zehnder interferometer structure is achieved by optimizing the initial phase difference, the splitting coefficient of dual-mode splitters, and the thermal modulation efficiency of the phase shifters, ensuring synchronous attenuation of the \u0000<inline-formula> <tex-math>${mathrm {TE}}_{0}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>${mathrm {TE}}_{1}$ </tex-math></inline-formula>\u0000 modes. At 1550 nm wavelength, experimental results show that the maximum attenuation depths of \u0000<inline-formula> <tex-math>${mathrm {TE}}_{0}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>${mathrm {TE}}_{1}$ </tex-math></inline-formula>\u0000 modes are 31.33 dB and 20.81 dB, respectively, with driving powers of 23.4 mW and 22.1 mW. Additionally, the measured response time of both modes is under \u0000<inline-formula> <tex-math>$26~mu $ </tex-math></inline-formula>\u0000s. The device is promising for applications in mode-insensitive optical interconnects.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141717626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A generic antenna array design approach through multi-objective optimization is adopted to design a non-uniform optical thinned array (TA) satisfying a desired far-field pattern mask and minimizing the number of radiating elements. The proposed optical TA is integrated with a silicon photonic beam-forming network (BFN) made of a mesh of tuneable Mach-Zehnder interferometer to implement a self-adaptive beam transmitter/receiver for free-space optical (FSO) systems. Experimental results demonstrate the beam steering and shaping capability of the proposed architecture, which self-configures without any need for pre-calibration.
{"title":"Adaptive Optical Thinned Antenna Array Controlled by an Integrated Photonic Processor","authors":"SeyedMohammad SeyedinNavadeh;Nicola Anselmi;Maziyar Milanizadeh;Francesco Zanetto;Andres Martinez;Paolo Rocca;Francesco Morichetti;Andrea Massa;Andrea Melloni","doi":"10.1109/LPT.2024.3427413","DOIUrl":"10.1109/LPT.2024.3427413","url":null,"abstract":"A generic antenna array design approach through multi-objective optimization is adopted to design a non-uniform optical thinned array (TA) satisfying a desired far-field pattern mask and minimizing the number of radiating elements. The proposed optical TA is integrated with a silicon photonic beam-forming network (BFN) made of a mesh of tuneable Mach-Zehnder interferometer to implement a self-adaptive beam transmitter/receiver for free-space optical (FSO) systems. Experimental results demonstrate the beam steering and shaping capability of the proposed architecture, which self-configures without any need for pre-calibration.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141611209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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