A chip-on-board (COB) packaged four-channel optical receiver integrated with a transimpedance amplifier (TIA) in 0.13- $mu $ m SiGe-BiCMOS technology with fT/fMAX =260/350 GHz demonstrating 56-Gbaud four-level pulse-amplitude modulation (PAM-4) with low noise and high linearity is presented in support of optical receivers required in linear-drive pluggable optics (LPO) and beyond-400G optical links. The proposed four-stage optical receiver comprises an inductive shunt-feedback TIA followed by two variable gain amplifiers (VGAs) with a continuous-time linear equalizer (CTLE) function and a 50-ohm output buffer. The $pi $ -topology L-C network and inductive shunt feedback techniques are used in TIA to meet the specifications of wide bandwidth (BW) and low noise. Two current-splitting VGA stages with CTLE function cascaded after TIA featuring high reliability can compensate for the loss of BW which caused by photo diode (PD) parasitic capacitance and provide a gain control range of −12dB ~ +18dB that accommodates input current up to 2mApp with low group delay variation. The 50-ohm output buffer with a T-coil and degeneration resistor achieves better output matching and high linearity. Measurement results show that TIA provides a maximum DC transimpedance gain (ZT) of 74 dB $Omega $ while O/E.BW is beyond 40 GHz, the 50-ohm output buffer offers 580-mV output swing and PAM-4 electrical eye diagrams up to 56-Gbaud of optical receiver with PRBS31Q. The optical receiver achieves a sensitivity of −9.7-dBm optical modulation amplitude (OMA) at pre-FEC BER limit of $2.4times 10^{-4}$ operating 56-Gbaud PAM-4 SSPRQ and consumes 720mW with a power supply of 3.3 V.
{"title":"A 4 × 56-Gbaud PAM-4 Optical Receiver Integrated With SiGe-BiCMOS TIA","authors":"Wei Chen;Minhao Li;Ming Zhong;Yuan Li;Ying Wu;Pisen Zhou;Tao Xia;Patrick Yin Chiang","doi":"10.1109/LPT.2024.3482566","DOIUrl":"https://doi.org/10.1109/LPT.2024.3482566","url":null,"abstract":"A chip-on-board (COB) packaged four-channel optical receiver integrated with a transimpedance amplifier (TIA) in 0.13-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m SiGe-BiCMOS technology with fT/fMAX =260/350 GHz demonstrating 56-Gbaud four-level pulse-amplitude modulation (PAM-4) with low noise and high linearity is presented in support of optical receivers required in linear-drive pluggable optics (LPO) and beyond-400G optical links. The proposed four-stage optical receiver comprises an inductive shunt-feedback TIA followed by two variable gain amplifiers (VGAs) with a continuous-time linear equalizer (CTLE) function and a 50-ohm output buffer. The \u0000<inline-formula> <tex-math>$pi $ </tex-math></inline-formula>\u0000-topology L-C network and inductive shunt feedback techniques are used in TIA to meet the specifications of wide bandwidth (BW) and low noise. Two current-splitting VGA stages with CTLE function cascaded after TIA featuring high reliability can compensate for the loss of BW which caused by photo diode (PD) parasitic capacitance and provide a gain control range of −12dB ~ +18dB that accommodates input current up to 2mApp with low group delay variation. The 50-ohm output buffer with a T-coil and degeneration resistor achieves better output matching and high linearity. Measurement results show that TIA provides a maximum DC transimpedance gain (ZT) of 74 dB\u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000 while O/E.BW is beyond 40 GHz, the 50-ohm output buffer offers 580-mV output swing and PAM-4 electrical eye diagrams up to 56-Gbaud of optical receiver with PRBS31Q. The optical receiver achieves a sensitivity of −9.7-dBm optical modulation amplitude (OMA) at pre-FEC BER limit of \u0000<inline-formula> <tex-math>$2.4times 10^{-4}$ </tex-math></inline-formula>\u0000 operating 56-Gbaud PAM-4 SSPRQ and consumes 720mW with a power supply of 3.3 V.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 24","pages":"1481-1484"},"PeriodicalIF":2.3,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We proposed a compact self-injection locked fiber laser, employing a weak fiber Bragg grating (wFBG) to achieve external feedback linewidth compression. The simulated results indicated that the output laser linewidth decreased with the increase of the length of the wFBG. According to the experimental results, the output laser linewidth was compressed to 300 Hz with an 8-mm long wFBG. However, a further increase in the length of the wFBG led to linewidth broadening, which can be attributed to the enhanced interference between the main cavity and wFBG. Additionally, the corresponding phase noise was suppressed by approximately 20 dB within the frequency range of 0 Hz - 100 Hz, and the relative intensity noise decreased to -123 dB/Hz. Furthermore, the amplitude of beat frequency fluctuated within 20 MHz over 1000-second period, and the output power exhibited fluctuations of less than 1% over a 7-hour period under laboratory conditions. Ideally, the compact fiber laser design will facilitate the miniaturization of sub-kHz-linewidth fiber lasers.
{"title":"Sub-kHz Linewidth Fiber Laser via Weak Fiber Bragg Grating Enabled Self-Injection Locking","authors":"Meng Zou;Yuze Dai;Xiangpeng Xiao;Weiliang Zhao;Kai Shen;Weixi Li;Qizhen Sun;Luming Zhao;Chengbo Mou;Hai Liu;Zhijun Yan","doi":"10.1109/LPT.2024.3482270","DOIUrl":"https://doi.org/10.1109/LPT.2024.3482270","url":null,"abstract":"We proposed a compact self-injection locked fiber laser, employing a weak fiber Bragg grating (wFBG) to achieve external feedback linewidth compression. The simulated results indicated that the output laser linewidth decreased with the increase of the length of the wFBG. According to the experimental results, the output laser linewidth was compressed to 300 Hz with an 8-mm long wFBG. However, a further increase in the length of the wFBG led to linewidth broadening, which can be attributed to the enhanced interference between the main cavity and wFBG. Additionally, the corresponding phase noise was suppressed by approximately 20 dB within the frequency range of 0 Hz - 100 Hz, and the relative intensity noise decreased to -123 dB/Hz. Furthermore, the amplitude of beat frequency fluctuated within 20 MHz over 1000-second period, and the output power exhibited fluctuations of less than 1% over a 7-hour period under laboratory conditions. Ideally, the compact fiber laser design will facilitate the miniaturization of sub-kHz-linewidth fiber lasers.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 24","pages":"1405-1408"},"PeriodicalIF":2.3,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We fabricate 850-nm vertical-cavity surface-emitting lasers (VCSELs) with oxide-aperture diameters of 5, 7, 9 and $11~mu $ m and study the effect of oxide-aperture size on the threshold current, output power, differential quantum efficiency and wall-plug efficiency of the devices. We characterize the small-signal modulation bandwidth ( ${f} _{3dB}$ ) of the devices and explore the impact of oxide-aperture size and bias current on the modulation bandwidth. We analyze the relationship between electrical power and the ${f} _{3dB}$ of the VCSELs with different aperture diameters. The fabricated 850-nm VCSEL with the oxide-aperture diameter of $7~mu $ m at room temperature shows a maximum ${f} _{3dB}$ of nearly 20 GHz and an output power of 9.09 mW. When the oxide-aperture increases to $11~mu $ m, the ${f} _{3dB}$ remains above 17 GHz and the optical output power exceeds 14 mW.
{"title":"Impact of Oxide Aperture on the Static and Dynamic Performance of 850-nm VCSELs","authors":"ShanShan Du;JinBao Su;HengJie Zhou;Huan Zhang;PingPing Qiu;Jun Deng;Qiang Kan;YiYang Xie","doi":"10.1109/LPT.2024.3481471","DOIUrl":"https://doi.org/10.1109/LPT.2024.3481471","url":null,"abstract":"We fabricate 850-nm vertical-cavity surface-emitting lasers (VCSELs) with oxide-aperture diameters of 5, 7, 9 and \u0000<inline-formula> <tex-math>$11~mu $ </tex-math></inline-formula>\u0000m and study the effect of oxide-aperture size on the threshold current, output power, differential quantum efficiency and wall-plug efficiency of the devices. We characterize the small-signal modulation bandwidth (\u0000<inline-formula> <tex-math>${f} _{3dB}$ </tex-math></inline-formula>\u0000) of the devices and explore the impact of oxide-aperture size and bias current on the modulation bandwidth. We analyze the relationship between electrical power and the \u0000<inline-formula> <tex-math>${f} _{3dB}$ </tex-math></inline-formula>\u0000 of the VCSELs with different aperture diameters. The fabricated 850-nm VCSEL with the oxide-aperture diameter of \u0000<inline-formula> <tex-math>$7~mu $ </tex-math></inline-formula>\u0000m at room temperature shows a maximum \u0000<inline-formula> <tex-math>${f} _{3dB}$ </tex-math></inline-formula>\u0000 of nearly 20 GHz and an output power of 9.09 mW. When the oxide-aperture increases to \u0000<inline-formula> <tex-math>$11~mu $ </tex-math></inline-formula>\u0000m, the \u0000<inline-formula> <tex-math>${f} _{3dB}$ </tex-math></inline-formula>\u0000 remains above 17 GHz and the optical output power exceeds 14 mW.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 24","pages":"1453-1456"},"PeriodicalIF":2.3,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/LPT.2024.3480313
Manish Singh Negi;Sunil Mohan
This letter describes the development and characterization of an optical fiber humidity sensor employing intensity modulation via evanescent wave (EW) absorption technique. For the development of the sensor, humidity-sensitive SiO2-coated ZnO nanoparticle doped PVA film was synthesized over the centrally decladded plastic cladding silica (PCS) fiber. In order to achieve optimal response, rigorous experimental investigations were conducted by varying the film thickness and composition. The optimized sensing probe demonstrated a linear response over 45.5-94.4% RH, with a linear sensitivity of 0.0137RH−1 (47.6mV/%RH). The response and recovery times were observed to be 1s and 1.25s during humidification and dehumidification, respectively. Additionally, the proposed sensor demonstrates a very high degree of repeatability, reversibility, and stability.
{"title":"Highly Sensitive Optical Fiber Humidity Sensor Employing SiO2 Coated ZnO Nanoparticle Doped PVA","authors":"Manish Singh Negi;Sunil Mohan","doi":"10.1109/LPT.2024.3480313","DOIUrl":"https://doi.org/10.1109/LPT.2024.3480313","url":null,"abstract":"This letter describes the development and characterization of an optical fiber humidity sensor employing intensity modulation via evanescent wave (EW) absorption technique. For the development of the sensor, humidity-sensitive SiO2-coated ZnO nanoparticle doped PVA film was synthesized over the centrally decladded plastic cladding silica (PCS) fiber. In order to achieve optimal response, rigorous experimental investigations were conducted by varying the film thickness and composition. The optimized sensing probe demonstrated a linear response over 45.5-94.4% RH, with a linear sensitivity of 0.0137RH−1 (47.6mV/%RH). The response and recovery times were observed to be 1s and 1.25s during humidification and dehumidification, respectively. Additionally, the proposed sensor demonstrates a very high degree of repeatability, reversibility, and stability.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 23","pages":"1389-1392"},"PeriodicalIF":2.3,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents the Rayleigh backscattering analysis in perfluorinated polymer optical fibers (POFs). In this case, the optical backscattering reflectometry is used on the analysis of the scattering optical signals in the time and frequency domains considering both s- and p-polarizations. The results show the two-way optical attenuation of 17.46±9.50 dB/m along the fiber length, (of around 0.5 m). Considering the frequency domain analysis, a 4.3% variation on the two-way optical attenuation was obtained, whereas an 8.1% variation is obtained when the s- and p-polarization are analyzed. Then, the perfluorinated POF is applied as a millimeter-scale resolution force sensor, where the optical attenuation and spectral shift are analyzed as a function of the force applied along the POF. The sensor application results indicated the feasibility of using both attenuation and spectral shift on the measurement of force along the optical fiber cable. Therefore, the proposed approach is a suitable method for high resolution sensing.
这封信介绍了全氟聚合物光纤（POF）中的瑞利反向散射分析。在这种情况下，考虑到 s 极化和 p 极化，利用光反向散射反射仪对散射光信号进行时域和频域分析。结果显示，沿光纤长度（约 0.5 米）的双向光衰减为 17.46±9.50 dB/m。考虑到频域分析，双向光衰减的变化率为 4.3%，而分析 s 极化和 p 极化时的变化率为 8.1%。然后，将全氟 POF 用作毫米级分辨率的力传感器，将光衰减和光谱偏移作为沿 POF 施加的力的函数进行分析。传感器的应用结果表明，利用衰减和光谱偏移测量光纤电缆上的力是可行的。因此，所提出的方法是一种适用于高分辨率传感的方法。
{"title":"Rayleigh Backscattering Analysis in POFs for High Spatial Resolution Distributed Sensing","authors":"Arnaldo Leal-Junior;Mariana Silveira;Carlos Marques","doi":"10.1109/LPT.2024.3480790","DOIUrl":"https://doi.org/10.1109/LPT.2024.3480790","url":null,"abstract":"This letter presents the Rayleigh backscattering analysis in perfluorinated polymer optical fibers (POFs). In this case, the optical backscattering reflectometry is used on the analysis of the scattering optical signals in the time and frequency domains considering both s- and p-polarizations. The results show the two-way optical attenuation of 17.46±9.50 dB/m along the fiber length, (of around 0.5 m). Considering the frequency domain analysis, a 4.3% variation on the two-way optical attenuation was obtained, whereas an 8.1% variation is obtained when the s- and p-polarization are analyzed. Then, the perfluorinated POF is applied as a millimeter-scale resolution force sensor, where the optical attenuation and spectral shift are analyzed as a function of the force applied along the POF. The sensor application results indicated the feasibility of using both attenuation and spectral shift on the measurement of force along the optical fiber cable. Therefore, the proposed approach is a suitable method for high resolution sensing.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 23","pages":"1373-1376"},"PeriodicalIF":2.3,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/LPT.2024.3480327
Debabrata Paul;Sunil Mohan;Sunil K. Khijwania
A novel design strategy for the development of FBG based all optical, temperature insensitive tilt sensor is proposed. Response characteristics of the proposed sensor is theoretical analyzed and experimentally established. An excellent sensitivity of 0.0415 nm/°, that can be further tuned to the desired value, along with remarkable accuracy of ±0.024°, extremely low maximum discrepancy of ±0.001 nm and an angular resolution of 0.012° are observed for the sensor. Sensor is also characterized with high degree of reversibility, reliability and repeatability.
{"title":"Development of Fiber Bragg Grating-Based Temperature Insensitive Novel All Optical Tilt Sensor","authors":"Debabrata Paul;Sunil Mohan;Sunil K. Khijwania","doi":"10.1109/LPT.2024.3480327","DOIUrl":"https://doi.org/10.1109/LPT.2024.3480327","url":null,"abstract":"A novel design strategy for the development of FBG based all optical, temperature insensitive tilt sensor is proposed. Response characteristics of the proposed sensor is theoretical analyzed and experimentally established. An excellent sensitivity of 0.0415 nm/°, that can be further tuned to the desired value, along with remarkable accuracy of ±0.024°, extremely low maximum discrepancy of ±0.001 nm and an angular resolution of 0.012° are observed for the sensor. Sensor is also characterized with high degree of reversibility, reliability and repeatability.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 23","pages":"1377-1380"},"PeriodicalIF":2.3,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/LPT.2024.3480324
Boyu Liu;Yao Zhang;Jingyu Lin;Jianliang Zhuo;Kunzhong Lai;Longfang Ye
In this letter, an effective method to increase the radiation gain of a Vivaldi antenna is proposed. In the antenna design, tilted parallel slots are etched on both flared radiators to suppress unnecessary broadside radiation through resonance effect and direct the energy predominantly in the end-fire direction. To further reduce the half-power beam width and increase the endfire gain, symmetric double E-shaped metamaterial units are introduced and arranged in a certain order at the end of the antenna without increasing the size. Compared to the traditional Vivaldi antenna, the proposed end-fire antenna demonstrates significant gain enhancement, with peak and average gain enhancements of 3.1 dBi and 2.4 dBi, respectively, across the frequency range of $13sim 20$ GHz. To validate the proposed design, a prototype is fabricated and measured, and the experimental results are in good agreement with the simulations. The antenna has good performances of high gain, high efficiency, and compact size, which may have great potential applications in various microwave wireless communication systems.
{"title":"Endfire Gain Enhancement Enabled by a Modified Antipodal Vivaldi Antenna With Metamaterials","authors":"Boyu Liu;Yao Zhang;Jingyu Lin;Jianliang Zhuo;Kunzhong Lai;Longfang Ye","doi":"10.1109/LPT.2024.3480324","DOIUrl":"https://doi.org/10.1109/LPT.2024.3480324","url":null,"abstract":"In this letter, an effective method to increase the radiation gain of a Vivaldi antenna is proposed. In the antenna design, tilted parallel slots are etched on both flared radiators to suppress unnecessary broadside radiation through resonance effect and direct the energy predominantly in the end-fire direction. To further reduce the half-power beam width and increase the endfire gain, symmetric double E-shaped metamaterial units are introduced and arranged in a certain order at the end of the antenna without increasing the size. Compared to the traditional Vivaldi antenna, the proposed end-fire antenna demonstrates significant gain enhancement, with peak and average gain enhancements of 3.1 dBi and 2.4 dBi, respectively, across the frequency range of \u0000<inline-formula> <tex-math>$13sim 20$ </tex-math></inline-formula>\u0000 GHz. To validate the proposed design, a prototype is fabricated and measured, and the experimental results are in good agreement with the simulations. The antenna has good performances of high gain, high efficiency, and compact size, which may have great potential applications in various microwave wireless communication systems.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 23","pages":"1385-1388"},"PeriodicalIF":2.3,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We develop inverted n-p junction arrayed vertical-cavity surface-emitting lasers (VCSELs) with 875 devices operating at ~940 nm, optimized for high optical output power in sensing applications. Employment of an n-type GaAs substrate prevents performance degradation caused by defects in p-type GaAs substrates. A tunnel junction enables polarity inversion. The inverted n-p VCSEL arrays, which are preferred for circuit design and packaging, are compared with conventional p-n junction VCSEL arrays on an n-type substrate using three-dimensional device modeling and experimental measurements. The optical output power of large-area $25times 35$ VCSEL arrays shows ~5.5 W at ${I}~approx ~6$ A. The threshold current density and slopes of the L-I curve of the inverted n-p VCSEL arrays are ~1.2 kA/cm2 and 0.98 W/A, respectively, which are similar to those of reference p-n VCSELs. The inverted n-p arrays demonstrate slightly better electrical performance, higher output power, and power conversion efficiency than p-n, enhancing their potential in voltage-controlled sensing systems. This is the first demonstration of the large-area inverted n-p VCSEL arrays, achieving the highest light output power critical for emerging 3D sensing and LiDAR applications.
{"title":"Inverted Junction VCSEL Arrays Operating at 940 nm With >5 W Employing Tunnel Junction","authors":"Sara Pouladi;Yong Gyeong Lee;Nam-In Kim;Asad Ali;Jaekyun Kim;Younghee Choi;Keon Hwa Lee;Jae-Hyun Ryou","doi":"10.1109/LPT.2024.3478745","DOIUrl":"https://doi.org/10.1109/LPT.2024.3478745","url":null,"abstract":"We develop inverted n-p junction arrayed vertical-cavity surface-emitting lasers (VCSELs) with 875 devices operating at ~940 nm, optimized for high optical output power in sensing applications. Employment of an n-type GaAs substrate prevents performance degradation caused by defects in p-type GaAs substrates. A tunnel junction enables polarity inversion. The inverted n-p VCSEL arrays, which are preferred for circuit design and packaging, are compared with conventional p-n junction VCSEL arrays on an n-type substrate using three-dimensional device modeling and experimental measurements. The optical output power of large-area \u0000<inline-formula> <tex-math>$25times 35$ </tex-math></inline-formula>\u0000 VCSEL arrays shows ~5.5 W at \u0000<inline-formula> <tex-math>${I}~approx ~6$ </tex-math></inline-formula>\u0000 A. The threshold current density and slopes of the L-I curve of the inverted n-p VCSEL arrays are ~1.2 kA/cm2 and 0.98 W/A, respectively, which are similar to those of reference p-n VCSELs. The inverted n-p arrays demonstrate slightly better electrical performance, higher output power, and power conversion efficiency than p-n, enhancing their potential in voltage-controlled sensing systems. This is the first demonstration of the large-area inverted n-p VCSEL arrays, achieving the highest light output power critical for emerging 3D sensing and LiDAR applications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 23","pages":"1369-1372"},"PeriodicalIF":2.3,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-11DOI: 10.1109/LPT.2024.3478811
Kai Chang;Jia Guo;Zhongwen Wang;Jialin Cheng;Jiahui Yu;Guocai Song;Jian-Jun He
A SOA-integrated widely tunable laser array is proposed and demonstrated in this letter. The semiconductor optical amplifier (SOA) is coupled to the tunable V-cavity laser through a deeply etched trench. An angled etched facet is used at the output of the SOA, in lieu of an anti-reflection (AR) coating, to effectively attenuate output facet reflection, while keeping the output beam perpendicular to the cleaved chip edge to facilitate external coupling. No complex grating or multiple epitaxial growth is needed. For the individual device, a tuning range of 36.3 nm is achieved by adjusting single electrode current with a side-mode suppression ratio of over 38 dB. A maximum output power of 32 mW at 5 °C is obtained. An array consisting of four SOA-integrated tunable lasers with different bandgaps are realized through three-step quantum well intermixing (QWI), thereby enabling a total tuning range of 103 nm.
本文提出并演示了一种集成 SOA 的宽调谐激光阵列。半导体光放大器（SOA）通过深蚀刻沟槽与可调谐 V 腔激光器耦合。在 SOA 的输出端使用一个倾斜的蚀刻面，以代替抗反射（AR）涂层，从而有效地减弱输出面的反射，同时保持输出光束垂直于裂开的芯片边缘，以方便外部耦合。无需复杂的光栅或多重外延生长。就单个器件而言，通过调节单电极电流可实现 36.3 nm 的调谐范围，侧模抑制比超过 38 dB。5 °C 时的最大输出功率为 32 mW。通过三步量子阱混合（QWI）技术，实现了由四个具有不同带隙的 SOA 集成可调谐激光器组成的阵列，从而使总调谐范围达到 103 nm。
{"title":"SOA-Integrated Widely Tunable Laser Array for All-Solid Lidar Application","authors":"Kai Chang;Jia Guo;Zhongwen Wang;Jialin Cheng;Jiahui Yu;Guocai Song;Jian-Jun He","doi":"10.1109/LPT.2024.3478811","DOIUrl":"https://doi.org/10.1109/LPT.2024.3478811","url":null,"abstract":"A SOA-integrated widely tunable laser array is proposed and demonstrated in this letter. The semiconductor optical amplifier (SOA) is coupled to the tunable V-cavity laser through a deeply etched trench. An angled etched facet is used at the output of the SOA, in lieu of an anti-reflection (AR) coating, to effectively attenuate output facet reflection, while keeping the output beam perpendicular to the cleaved chip edge to facilitate external coupling. No complex grating or multiple epitaxial growth is needed. For the individual device, a tuning range of 36.3 nm is achieved by adjusting single electrode current with a side-mode suppression ratio of over 38 dB. A maximum output power of 32 mW at 5 °C is obtained. An array consisting of four SOA-integrated tunable lasers with different bandgaps are realized through three-step quantum well intermixing (QWI), thereby enabling a total tuning range of 103 nm.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 23","pages":"1381-1384"},"PeriodicalIF":2.3,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-10DOI: 10.1109/LPT.2024.3477614
Ami Zi;Siyuan Tan;Qiujie Wu;Xiangcheng Chen;Bolin Cai
Event cameras report per-pixel brightness changes as a stream of asynchronous events, making them insensitive to the spatial distribution of feature points. Thus, traditional calibration methods, such as checkerboard and circle patterns, are inadequate for precise event camera calibration. Here, we propose an accurate calibration method based on blinking binary stripes to address this limitation. Two binary stripes, which are orthogonal, are displayed on a screen and blink at a specific frequency. The triggered data streams are converted into frames, which are analyzed using the Fourier technique. Thus, the feature points are located from the phase domain, which differs from conventional methods. The superior performance of the proposed method is verified in calibration experiments.
{"title":"Flexible Event Camera Calibration With Blinking Binary Stripes","authors":"Ami Zi;Siyuan Tan;Qiujie Wu;Xiangcheng Chen;Bolin Cai","doi":"10.1109/LPT.2024.3477614","DOIUrl":"https://doi.org/10.1109/LPT.2024.3477614","url":null,"abstract":"Event cameras report per-pixel brightness changes as a stream of asynchronous events, making them insensitive to the spatial distribution of feature points. Thus, traditional calibration methods, such as checkerboard and circle patterns, are inadequate for precise event camera calibration. Here, we propose an accurate calibration method based on blinking binary stripes to address this limitation. Two binary stripes, which are orthogonal, are displayed on a screen and blink at a specific frequency. The triggered data streams are converted into frames, which are analyzed using the Fourier technique. Thus, the feature points are located from the phase domain, which differs from conventional methods. The superior performance of the proposed method is verified in calibration experiments.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"36 23","pages":"1357-1360"},"PeriodicalIF":2.3,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142451006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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