Pub Date : 2025-02-04DOI: 10.1109/LPT.2025.3538487
Hai Huang;Xiaodi You;Jin Shi;Jian Chen;Changyuan Yu;Mingyi Gao;Gangxiang Shen
We propose an optical camera communication (OCC) system with dimming control, employing wavelength division multiplexing (WDM) with RGB and infrared (IR) light sources. The system uses pulse width modulation (PWM) for brightness adjustment, with IR transmission integrated into both PWM “ON” and “OFF” slots to compensate for data rate losses caused by dimming. To eliminate interference at the receiver, we implement a scheme that utilizes color correction and principal component analysis to separate the hybrid signal, with an optimization approach to fine-tune the IR intensity. This design achieves a data rate of 10.8 Kb/s at 30 fps under full dimming, offering a 33.3% improvement over RGB-only transmission. At a duty cycle of 0.5, the data rate further improves by 75.6%.
{"title":"Dimmable Optical Camera Communications With WDM Using RGB and Infrared LEDs","authors":"Hai Huang;Xiaodi You;Jin Shi;Jian Chen;Changyuan Yu;Mingyi Gao;Gangxiang Shen","doi":"10.1109/LPT.2025.3538487","DOIUrl":"https://doi.org/10.1109/LPT.2025.3538487","url":null,"abstract":"We propose an optical camera communication (OCC) system with dimming control, employing wavelength division multiplexing (WDM) with RGB and infrared (IR) light sources. The system uses pulse width modulation (PWM) for brightness adjustment, with IR transmission integrated into both PWM “ON” and “OFF” slots to compensate for data rate losses caused by dimming. To eliminate interference at the receiver, we implement a scheme that utilizes color correction and principal component analysis to separate the hybrid signal, with an optimization approach to fine-tune the IR intensity. This design achieves a data rate of 10.8 Kb/s at 30 fps under full dimming, offering a 33.3% improvement over RGB-only transmission. At a duty cycle of 0.5, the data rate further improves by 75.6%.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 5","pages":"253-256"},"PeriodicalIF":2.3,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-30DOI: 10.1109/LPT.2025.3536794
Yan Zhou;Tianyi Li;Xiaoqiang Tao;Weizong Xu;Dong Zhou;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu
In this work, we report a high single photon detection efficiency 4H-SiC ultraviolet (UV) avalanche photodiode (APD) with an off-center top electrode structure. To alleviate the lateral-carrier-drift induced non-uniform gain distribution of SiC APDs, a half-ring shape top electrode structure is designed, in which the electrode is off-center placed on the $[11overline 2 0]$ side of the circular mesa. Based on 2-dimensional photon count mapping, it is demonstrated that such device design can notably reduce the top electrode shadowing effect on the high-gain light sensitive region, thereby improving the single photon detection efficiency (SPDE) of the SiC APD. When operating in Geiger mode based on an active quenching circuit, the fabricated APD with the off-center top electrode structure shows a high SPDE of 36.7%, which is 28.7% higher than that of the control device with traditional symmetric electrode. Meanwhile, a relatively low dark count rate of ~14.4 Hz/$mu $ m2 is obtained. This work provides a new strategy for designing high detection efficiency SiC APDs.
{"title":"High Detection Efficiency 4H-SiC Avalanche Photodiode With Off-Center Top Electrode Structure","authors":"Yan Zhou;Tianyi Li;Xiaoqiang Tao;Weizong Xu;Dong Zhou;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu","doi":"10.1109/LPT.2025.3536794","DOIUrl":"https://doi.org/10.1109/LPT.2025.3536794","url":null,"abstract":"In this work, we report a high single photon detection efficiency 4H-SiC ultraviolet (UV) avalanche photodiode (APD) with an off-center top electrode structure. To alleviate the lateral-carrier-drift induced non-uniform gain distribution of SiC APDs, a half-ring shape top electrode structure is designed, in which the electrode is off-center placed on the <inline-formula> <tex-math>$[11overline 2 0]$ </tex-math></inline-formula> side of the circular mesa. Based on 2-dimensional photon count mapping, it is demonstrated that such device design can notably reduce the top electrode shadowing effect on the high-gain light sensitive region, thereby improving the single photon detection efficiency (SPDE) of the SiC APD. When operating in Geiger mode based on an active quenching circuit, the fabricated APD with the off-center top electrode structure shows a high SPDE of 36.7%, which is 28.7% higher than that of the control device with traditional symmetric electrode. Meanwhile, a relatively low dark count rate of ~14.4 Hz/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m2 is obtained. This work provides a new strategy for designing high detection efficiency SiC APDs.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 5","pages":"261-264"},"PeriodicalIF":2.3,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143480814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-28DOI: 10.1109/LPT.2025.3535850
Yixuan Shen;Rui Q. Yang;Tetsuya D. Mishima;John D. Steward;Michael B. Santos;Xiaojun Wang
We report significant advancements of interband cascade lasers (ICLs) with hybrid cladding layers. These 6-stage hybrid-cladding ICLs were able to lase in pulsed modes at temperatures up to 421 K, the highest ever reported among ICLs. The lasing wavelength was near $3.3~mu $ m at 300 K with a pulsed threshold current density of 114 A/cm2, the lowest for ICLs with similar wavelengths. Also, they achieved a high voltage efficiency of ~82% and a record-low threshold input power density of 312 W/cm2 at 300 K. Facet-uncoated narrow-ridge ICLs operated in continuous wave (CW) mode at temperatures up to 364 K (91°C), which is more than 20 K higher than the previous record for epi-up mounted ICLs. The obtained CW threshold current density of 205 A/cm2 at 300 K is similar to the previous record (~200 A/cm2 at 300 K) achieved by a superlattice-cladding 10-stage ICL with emission near the long-held optimal wavelength of ICLs at $3.6~mu $ m. Also, these ICLs at 300 K delivered CW output power of 25 mW/facet at 160 mA with substantially improved external quantum efficiency over previous ICLs at similar wavelengths.
{"title":"High Performance Interband Cascade Lasers With Room Temperature Lasing Wavelengths Near 3.3 μm","authors":"Yixuan Shen;Rui Q. Yang;Tetsuya D. Mishima;John D. Steward;Michael B. Santos;Xiaojun Wang","doi":"10.1109/LPT.2025.3535850","DOIUrl":"https://doi.org/10.1109/LPT.2025.3535850","url":null,"abstract":"We report significant advancements of interband cascade lasers (ICLs) with hybrid cladding layers. These 6-stage hybrid-cladding ICLs were able to lase in pulsed modes at temperatures up to 421 K, the highest ever reported among ICLs. The lasing wavelength was near <inline-formula> <tex-math>$3.3~mu $ </tex-math></inline-formula>m at 300 K with a pulsed threshold current density of 114 A/cm2, the lowest for ICLs with similar wavelengths. Also, they achieved a high voltage efficiency of ~82% and a record-low threshold input power density of 312 W/cm2 at 300 K. Facet-uncoated narrow-ridge ICLs operated in continuous wave (CW) mode at temperatures up to 364 K (91°C), which is more than 20 K higher than the previous record for epi-up mounted ICLs. The obtained CW threshold current density of 205 A/cm2 at 300 K is similar to the previous record (~200 A/cm2 at 300 K) achieved by a superlattice-cladding 10-stage ICL with emission near the long-held optimal wavelength of ICLs at <inline-formula> <tex-math>$3.6~mu $ </tex-math></inline-formula>m. Also, these ICLs at 300 K delivered CW output power of 25 mW/facet at 160 mA with substantially improved external quantum efficiency over previous ICLs at similar wavelengths.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"243-246"},"PeriodicalIF":2.3,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-28DOI: 10.1109/LPT.2025.3535626
Shikha Singh;Abhinav Pratap Singh;Satyabrata Jit
This letter reports an ITO/n-ZnO CQDs/n-MoSe2/Ag structure based ultraviolet-visible (UV-Vis) broadband photodetector where the n-n heterojunction between ZnO colloidal quantum dots (CQDs) and MoSe2 thin film fabricated on an Indium tin oxide (ITO) coated glass substrate forms the active region of the device. The ZnO CQDs synthesized by hot-injection method was spin-coated on the substrate while MoSe2 nano-powder synthesized by hydrothermal method was deposited on the ZnO CQDs layer by thermal evaporation method to obtain the ZnO CQDs/MoSe2 heterojunction. The heterojunction showed a broad absorption spectrum covering the UV-Vis region. Under applied bias voltage of 2 V, the proposed photodetector showed the maximum responsivity (R) of ~282 A/W, detectivity (D) of $sim 9times 10 ^{12}$ Jones and external quantum efficiency (EQE) of ~90000% at 380 nm (with $47~mu $ W/cm2 intensity) in the UV region whereas R ~16.15 A/W, D $sim ~5.37times 10 ^{11}$ Jones, EQE ~3660% were measured at 550 nm (with 0.22 mW/cm2 intensity) in the visible region. The transient response analysis of the device showed a rise time (fall time) as 7.25 sec (2.25 sec) at 380 nm and 1.2 sec (2.2 sec) at 550 nm.
{"title":"High Performance ZnO CQDs/MoSe₂ Heterojunction UV-Visible Broadband Photodetector","authors":"Shikha Singh;Abhinav Pratap Singh;Satyabrata Jit","doi":"10.1109/LPT.2025.3535626","DOIUrl":"https://doi.org/10.1109/LPT.2025.3535626","url":null,"abstract":"This letter reports an ITO/n-ZnO CQDs/n-MoSe2/Ag structure based ultraviolet-visible (UV-Vis) broadband photodetector where the n-n heterojunction between ZnO colloidal quantum dots (CQDs) and MoSe2 thin film fabricated on an Indium tin oxide (ITO) coated glass substrate forms the active region of the device. The ZnO CQDs synthesized by hot-injection method was spin-coated on the substrate while MoSe2 nano-powder synthesized by hydrothermal method was deposited on the ZnO CQDs layer by thermal evaporation method to obtain the ZnO CQDs/MoSe2 heterojunction. The heterojunction showed a broad absorption spectrum covering the UV-Vis region. Under applied bias voltage of 2 V, the proposed photodetector showed the maximum responsivity (R) of ~282 A/W, detectivity (D) of <inline-formula> <tex-math>$sim 9times 10 ^{12}$ </tex-math></inline-formula> Jones and external quantum efficiency (EQE) of ~90000% at 380 nm (with <inline-formula> <tex-math>$47~mu $ </tex-math></inline-formula>W/cm2 intensity) in the UV region whereas R ~16.15 A/W, D <inline-formula> <tex-math>$sim ~5.37times 10 ^{11}$ </tex-math></inline-formula> Jones, EQE ~3660% were measured at 550 nm (with 0.22 mW/cm2 intensity) in the visible region. The transient response analysis of the device showed a rise time (fall time) as 7.25 sec (2.25 sec) at 380 nm and 1.2 sec (2.2 sec) at 550 nm.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"247-250"},"PeriodicalIF":2.3,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The P-electrode is essential for achieving uniform current distribution within the chip, which directly affects the device optoelectronic performance. In this study, micro-LEDs of varying sizes (22, 34, and $46~mu $ m) and P-electrode area ratios (20%, 30%, and 40%) were fabricated and analyzed. The findings reveal that the optoelectronic performance of micro-LEDs smaller than $50~mu $ m is significantly affected by different P-electrode area ratios under low current density conditions. This effect primarily results from the combined influence of current distribution and the light-blocking properties of the P-electrode metal. To characterize the performance of these micro-LEDs, hyperspectral imaging and COMSOL simulations were employed. The insights gained from these results provide valuable guidance for the design and fabrication of micro-LEDs optimized for low current density operation.
{"title":"Effect of P-Electrode Area Ratio on Micro-LED Optoelectronic Performance","authors":"Shi-Biao Liu;Wen-An Guo;You-Cai Deng;Ming-He Wan;Mai-Jia Lin;Tao-Ming Liu;Yue-Lin;Hao-Chung Kuo;Yi-Jun Lu;Zhong Chen;Ting-Zhu Wu","doi":"10.1109/LPT.2025.3534203","DOIUrl":"https://doi.org/10.1109/LPT.2025.3534203","url":null,"abstract":"The P-electrode is essential for achieving uniform current distribution within the chip, which directly affects the device optoelectronic performance. In this study, micro-LEDs of varying sizes (22, 34, and <inline-formula> <tex-math>$46~mu $ </tex-math></inline-formula>m) and P-electrode area ratios (20%, 30%, and 40%) were fabricated and analyzed. The findings reveal that the optoelectronic performance of micro-LEDs smaller than <inline-formula> <tex-math>$50~mu $ </tex-math></inline-formula>m is significantly affected by different P-electrode area ratios under low current density conditions. This effect primarily results from the combined influence of current distribution and the light-blocking properties of the P-electrode metal. To characterize the performance of these micro-LEDs, hyperspectral imaging and COMSOL simulations were employed. The insights gained from these results provide valuable guidance for the design and fabrication of micro-LEDs optimized for low current density operation.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"239-242"},"PeriodicalIF":2.3,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-27DOI: 10.1109/LPT.2025.3534294
Shuai Wang;Han Ye;Liyan Geng;Yimiao Chu;Yu Zheng;Qin Han
This letter describes a planar avalanche photodiode (APD) with 3dB bandwidth of 40 GHz at gain of 2.5, which is the highest bandwidth among reported vertical planar InAlAs APD. The APD adopts selective Zn diffusion to form the planar structure. Scale of the APD can be easily reduced to meet the needs of high-speed operation. The added p/n double charge layers can accurately adjust the electric field distribution inside the APD. By optimizing the thickness of the absorption and the transit layers, a compromise can be determined between carrier transport time and capacitance to achieve high bandwidth. An equivalent circuit of planar APD was established, laying the foundation for characteristics performance optimization. The fabricated APD uses 90 nm InAlAs as the multiplication layer and the dark current is $1~{mu } $ A. The responsivity of the top-incidence APD without anti-reflection is 0.15 A/W at $1.55~{mu } $ m. The gain reaches 45 when the incident light intensity is $10~{mu } $ W.
{"title":"High-Speed Planar InGaAs/InAlAs Avalanche Photodiode","authors":"Shuai Wang;Han Ye;Liyan Geng;Yimiao Chu;Yu Zheng;Qin Han","doi":"10.1109/LPT.2025.3534294","DOIUrl":"https://doi.org/10.1109/LPT.2025.3534294","url":null,"abstract":"This letter describes a planar avalanche photodiode (APD) with 3dB bandwidth of 40 GHz at gain of 2.5, which is the highest bandwidth among reported vertical planar InAlAs APD. The APD adopts selective Zn diffusion to form the planar structure. Scale of the APD can be easily reduced to meet the needs of high-speed operation. The added p/n double charge layers can accurately adjust the electric field distribution inside the APD. By optimizing the thickness of the absorption and the transit layers, a compromise can be determined between carrier transport time and capacitance to achieve high bandwidth. An equivalent circuit of planar APD was established, laying the foundation for characteristics performance optimization. The fabricated APD uses 90 nm InAlAs as the multiplication layer and the dark current is <inline-formula> <tex-math>$1~{mu } $ </tex-math></inline-formula>A. The responsivity of the top-incidence APD without anti-reflection is 0.15 A/W at <inline-formula> <tex-math>$1.55~{mu } $ </tex-math></inline-formula>m. The gain reaches 45 when the incident light intensity is <inline-formula> <tex-math>$10~{mu } $ </tex-math></inline-formula>W.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"235-238"},"PeriodicalIF":2.3,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, we investigate the average symbol error rate (SER) performance of M-ary phase-shift keying (MPSK) with Tikhonov-distributed phase errors, under both intensity modulation with direct detection and heterodyne detection, in dual-hop free space optical (FSO) communication systems with fixed-gain amplify-and-forward relaying. We assume the FSO channel experiences Málaga fading with pointing errors. We derive the probability distribution function (PDF) for the end-to-end signal-to-noise ratio and use this PDF to obtain novel analytical expressions for the average SER of MPSK. Numerical results and Monte Carlo simulations validate the accuracy of these newly obtained expressions.
{"title":"Error Probability of MPSK With Phase Errors in Dual-Hop FSO Communication Systems","authors":"Jiashun Hu;Weiqiang Wu;Sunan Wang;Yuexiang Wu;Zaichen Zhang","doi":"10.1109/LPT.2025.3531792","DOIUrl":"https://doi.org/10.1109/LPT.2025.3531792","url":null,"abstract":"In this letter, we investigate the average symbol error rate (SER) performance of M-ary phase-shift keying (MPSK) with Tikhonov-distributed phase errors, under both intensity modulation with direct detection and heterodyne detection, in dual-hop free space optical (FSO) communication systems with fixed-gain amplify-and-forward relaying. We assume the FSO channel experiences Málaga fading with pointing errors. We derive the probability distribution function (PDF) for the end-to-end signal-to-noise ratio and use this PDF to obtain novel analytical expressions for the average SER of MPSK. Numerical results and Monte Carlo simulations validate the accuracy of these newly obtained expressions.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"231-234"},"PeriodicalIF":2.3,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The silica platform offers large-scale, low-cost fabrication for planar lightwave circuits (PLC). The broadband and compact fiber-to-chip edge coupler is essential for high performance PLC chips. Here, a silica trident gratings-based edge coupler is theoretically designed and experimentally demonstrated. By CMOS compatible fabrication, the prepared coupler presents the fiber-to-chip coupling loss of 0.95 and 0.93 dB/facet at the optical wavelength 1310 and 1550 nm, respectively. The coupling loss varies from 0.41 to 1.36 dB/facet over the wavelength range from 1264 to 1620 nm. Specifically, the edge coupler features the large alignment tolerance of $pm 3mu $ m and $pm 3.5mu $ m for a 1-dB penalty along directions of waveguide width and height, respectively. The small footprint of $8.6~mu $ m $times 83.2~mu $ m offers the coupler potentials in compact PLC applications.
{"title":"Compact Broadband Edge Coupler Based on Trident Gratings for Silica Platform","authors":"Manzhuo Wang;Yu Xin;Zhentao Yao;Tingyu Liu;Jimin Fang;Xiaoqiang Sun;Yuanda Wu;Daming Zhang","doi":"10.1109/LPT.2025.3532408","DOIUrl":"https://doi.org/10.1109/LPT.2025.3532408","url":null,"abstract":"The silica platform offers large-scale, low-cost fabrication for planar lightwave circuits (PLC). The broadband and compact fiber-to-chip edge coupler is essential for high performance PLC chips. Here, a silica trident gratings-based edge coupler is theoretically designed and experimentally demonstrated. By CMOS compatible fabrication, the prepared coupler presents the fiber-to-chip coupling loss of 0.95 and 0.93 dB/facet at the optical wavelength 1310 and 1550 nm, respectively. The coupling loss varies from 0.41 to 1.36 dB/facet over the wavelength range from 1264 to 1620 nm. Specifically, the edge coupler features the large alignment tolerance of <inline-formula> <tex-math>$pm 3mu $ </tex-math></inline-formula> m and <inline-formula> <tex-math>$pm 3.5mu $ </tex-math></inline-formula> m for a 1-dB penalty along directions of waveguide width and height, respectively. The small footprint of <inline-formula> <tex-math>$8.6~mu $ </tex-math></inline-formula> m <inline-formula> <tex-math>$times 83.2~mu $ </tex-math></inline-formula> m offers the coupler potentials in compact PLC applications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"227-230"},"PeriodicalIF":2.3,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-17DOI: 10.1109/LPT.2025.3531207
Jacek Olszewski;Marta Bernaś;Przemysław Chmielowski;Paweł Mergo;Waclaw Urbanczyk;Gabriela Statkiewicz-Barabach
We examined the influence of germanium concentration in fiber core on distributed axial strain sensitivity in optical frequency-domain reflectometry based on Rayleigh scattering for single-mode step-index fibers differing in the level of germanium concentration (from 3.6 to 40.6 mol%). We observed a monotonically decreasing dependence of axial strain sensitivity on germanium concentration within a range of 0–3.5 mstrain for uncoated fibers. The lowest axial strain sensitivity of 0.7422 1/strain was obtained for fiber doped with 40.6 mol% GeO2 (UHNA7), compared to 0.7859 1/strain for fiber with 3.6 mol% GeO2 content (SMF-28). We also derived an analytical formula for strain sensitivity in optical frequency-domain reflectometry, explaining the experimental results.
{"title":"Distributed Axial Strain Sensitivity in Fibers With Different Germanium Concentrations","authors":"Jacek Olszewski;Marta Bernaś;Przemysław Chmielowski;Paweł Mergo;Waclaw Urbanczyk;Gabriela Statkiewicz-Barabach","doi":"10.1109/LPT.2025.3531207","DOIUrl":"https://doi.org/10.1109/LPT.2025.3531207","url":null,"abstract":"We examined the influence of germanium concentration in fiber core on distributed axial strain sensitivity in optical frequency-domain reflectometry based on Rayleigh scattering for single-mode step-index fibers differing in the level of germanium concentration (from 3.6 to 40.6 mol%). We observed a monotonically decreasing dependence of axial strain sensitivity on germanium concentration within a range of 0–3.5 mstrain for uncoated fibers. The lowest axial strain sensitivity of 0.7422 1/strain was obtained for fiber doped with 40.6 mol% GeO2 (UHNA7), compared to 0.7859 1/strain for fiber with 3.6 mol% GeO2 content (SMF-28). We also derived an analytical formula for strain sensitivity in optical frequency-domain reflectometry, explaining the experimental results.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"223-226"},"PeriodicalIF":2.3,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844327","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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