Pub Date : 2024-08-26DOI: 10.1109/ted.2024.3441562
Weili Xu, Junpu Ling, Juntao He, XinBing Cheng, Rong Chen, Lili Song, Lei Wang, Xingfu Gao, Zulong Chen
{"title":"Investigation of Breakdown Phenomenon and Long-Pulse Improvement in Ku-Band TTO","authors":"Weili Xu, Junpu Ling, Juntao He, XinBing Cheng, Rong Chen, Lili Song, Lei Wang, Xingfu Gao, Zulong Chen","doi":"10.1109/ted.2024.3441562","DOIUrl":"https://doi.org/10.1109/ted.2024.3441562","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Facile Approach to Fabricate QCM Humidity Sensor Based on Molybdenum Disulfide/ Cellulose Nanocrystal Thin Film","authors":"Jianwen Song, Lei Liang, Xiao Yong, Xinpeng Chen, Shibu Zhu, Zuquan Wu","doi":"10.1109/ted.2024.3446744","DOIUrl":"https://doi.org/10.1109/ted.2024.3446744","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fabrication and Compact Modeling of Low-Voltage Flexible Organic TFT Using Self-Assembly of Conductive Polymer Channel Over High-k PMMA/SrZrO$_{textit{x}}$ Dielectric","authors":"Mukuljeet Singh Mehrolia, Dharmendra Kumar, Ankit Verma, Abhishek Kumar Singh","doi":"10.1109/ted.2024.3442165","DOIUrl":"https://doi.org/10.1109/ted.2024.3442165","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-26DOI: 10.1109/ted.2024.3446755
Jinyu Lu, Gang He, Li Cheng, Bing Yang, Shanshan Jiang
{"title":"Modification of Interface Quality and Electrical Performance of ErSmO/InP Gate-Stacks by ALD-Driven HfAlO$_{textit{x}}$ Interlayers","authors":"Jinyu Lu, Gang He, Li Cheng, Bing Yang, Shanshan Jiang","doi":"10.1109/ted.2024.3446755","DOIUrl":"https://doi.org/10.1109/ted.2024.3446755","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-26DOI: 10.1109/ted.2024.3438102
Ce Wang, Hengyu Wang, Kuang Sheng
{"title":"Floating Island Structure With Metal Bridge to Resolve the Turn-On Recovery Problem","authors":"Ce Wang, Hengyu Wang, Kuang Sheng","doi":"10.1109/ted.2024.3438102","DOIUrl":"https://doi.org/10.1109/ted.2024.3438102","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Bipolar Resistive Switching Behavior in All Inorganic Lead-Free Double-Perovskite Cs$_{text{2}}$SnI$_{text{6}}$ Thin Film for Low-Power ReRAM","authors":"Manoj Kumar, Harshit Sharma, Ritu Srivastava, Sushil Kumar","doi":"10.1109/ted.2024.3445311","DOIUrl":"https://doi.org/10.1109/ted.2024.3445311","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors","authors":"Yizhang Liu, Erping Li, Huali Duan, Liang Tian, Da Li, Wenchao Chen","doi":"10.1109/ted.2024.3430255","DOIUrl":"https://doi.org/10.1109/ted.2024.3430255","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-26DOI: 10.1109/ted.2024.3446488
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot
{"title":"Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping","authors":"Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot","doi":"10.1109/ted.2024.3446488","DOIUrl":"https://doi.org/10.1109/ted.2024.3446488","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/ted.2024.3443780
HyungMin Cho, HyunJoon Jeong, Yohan Kim, JinYoung Choi, Jeong-Taek Kong, SoYoung Kim
{"title":"Expanding the Pareto Front of Ferroelectric Field-Effect Transistors With a Dual-k Spacer","authors":"HyungMin Cho, HyunJoon Jeong, Yohan Kim, JinYoung Choi, Jeong-Taek Kong, SoYoung Kim","doi":"10.1109/ted.2024.3443780","DOIUrl":"https://doi.org/10.1109/ted.2024.3443780","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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