Pub Date : 2025-01-15DOI: 10.1109/TED.2025.3526100
Chentao Zou;Liangcai Wu;Yanping Sui;Zhitang Song;Sannian Song
Conventional single-layer phase-change film in phase-change memory (PCM) tends to form large grains during phase transition, resulting in reduced operation speed, endurance, and increased resistance drift, density change. In this work, we propose a carbon/carbon-doped Sb2Te (C/CST) heterostructure thin film consisting of alternating sublayers of CST and pure C to realize 3-D restricted phase transition to achieve high performance of PCM. The C/CST heterostructure-based PCM device exhibits a rapid phase-change speed of 6 ns, a stable SET/RESET resistance ratio of about $5times 10^{5}$ cycles, an ultralow-resistance drift coefficient of 0.0010, and only 0.75% thickness variations during phase transition. These results demonstrate that the 3-D restricted C/CST heterostructure would be an effective strategy for high-performance PCM applications.
{"title":"Three-Dimensional Restricted C/C–Sb₂Te Heterostructure for Phase-Change Memory Applications","authors":"Chentao Zou;Liangcai Wu;Yanping Sui;Zhitang Song;Sannian Song","doi":"10.1109/TED.2025.3526100","DOIUrl":"https://doi.org/10.1109/TED.2025.3526100","url":null,"abstract":"Conventional single-layer phase-change film in phase-change memory (PCM) tends to form large grains during phase transition, resulting in reduced operation speed, endurance, and increased resistance drift, density change. In this work, we propose a carbon/carbon-doped Sb2Te (C/CST) heterostructure thin film consisting of alternating sublayers of CST and pure C to realize 3-D restricted phase transition to achieve high performance of PCM. The C/CST heterostructure-based PCM device exhibits a rapid phase-change speed of 6 ns, a stable SET/RESET resistance ratio of about <inline-formula> <tex-math>$5times 10^{5}$ </tex-math></inline-formula> cycles, an ultralow-resistance drift coefficient of 0.0010, and only 0.75% thickness variations during phase transition. These results demonstrate that the 3-D restricted C/CST heterostructure would be an effective strategy for high-performance PCM applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1091-1096"},"PeriodicalIF":2.9,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-15DOI: 10.1109/TED.2024.3521920
Yu-Chun Li;Xiao-Xi Li;Zi-Ying Huang;Ming Li;Ru Huang;David Wei Zhang;Hong-Liang Lu
The ferroelectric properties, polarization switching kinetics, and endurance characteristics of Ga-doped HfO2(Ga-HfO2) capacitors have been systematically investigated across a temperature range of 300–473 K. The results reveal a strong temperature dependence: remanent polarization (${P}_{text {r}}$ ) increases, coercive voltage decreases, the imprint effect intensifies, polarization switching slows, and endurance degrades with rising temperature. Notably, the Ga-HfO2 device still maintains stable ferroelectricity at 473 K, with a $2{P}_{text {r}}$ of $44~mu $ C/cm2. Besides, over 80% polarization reversal can be achieved with 3.2-V/500-ns excitation for $10^{{4}}$ -$mu $ m2 Ga-HfO2 devices. Moreover, the endurance properties of Ga-HfO2 devices surpass 2x${10}^{{5}}$ cycles at 3.0 V/100 kHz, outperforming those of Zr-doped counterparts at 473 K. The study suggests that defect behaviors primarily drive the temperature dependence in HfO2 devices, providing valuable insights for reliable ferroelectric memory.
{"title":"Examination of Temperature-Dependent Polarization Switching Characteristics in Ferroelectric Ga-Doped HfO₂ Thin Films","authors":"Yu-Chun Li;Xiao-Xi Li;Zi-Ying Huang;Ming Li;Ru Huang;David Wei Zhang;Hong-Liang Lu","doi":"10.1109/TED.2024.3521920","DOIUrl":"https://doi.org/10.1109/TED.2024.3521920","url":null,"abstract":"The ferroelectric properties, polarization switching kinetics, and endurance characteristics of Ga-doped HfO2(Ga-HfO2) capacitors have been systematically investigated across a temperature range of 300–473 K. The results reveal a strong temperature dependence: remanent polarization (<inline-formula> <tex-math>${P}_{text {r}}$ </tex-math></inline-formula>) increases, coercive voltage decreases, the imprint effect intensifies, polarization switching slows, and endurance degrades with rising temperature. Notably, the Ga-HfO2 device still maintains stable ferroelectricity at 473 K, with a <inline-formula> <tex-math>$2{P}_{text {r}}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$44~mu $ </tex-math></inline-formula>C/cm2. Besides, over 80% polarization reversal can be achieved with 3.2-V/500-ns excitation for <inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m2 Ga-HfO2 devices. Moreover, the endurance properties of Ga-HfO2 devices surpass 2x<inline-formula> <tex-math>${10}^{{5}}$ </tex-math></inline-formula> cycles at 3.0 V/100 kHz, outperforming those of Zr-doped counterparts at 473 K. The study suggests that defect behaviors primarily drive the temperature dependence in HfO2 devices, providing valuable insights for reliable ferroelectric memory.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"807-812"},"PeriodicalIF":2.9,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nanowire field-effect transistor (NW FET) biosensors are known to be highly sensitive devices that can detect extremely low concentrations of biomolecules. In this article, we present an analytical model alongside with numerical simulations to calculate the sensitivity of NW FET biosensors. The model accounts for biosensing dynamics as well as diffusion of ions in the solution and across the functionalized layer. The signal-to-noise ratio (SNR) is also estimated, which gives a lower limit in terms of sensitivity. The model is physics-based and is validated against COMSOL multiphysics simulations and experimental data. It predicts the biosensitivity down to the femtomolar concentration of biomolecules without any fitting parameter.
{"title":"Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects","authors":"Ashkhen Yesayan;Aleksandr Grabski;Farzan Jazaeri;Jean-Michel Sallese","doi":"10.1109/TED.2025.3526113","DOIUrl":"https://doi.org/10.1109/TED.2025.3526113","url":null,"abstract":"Nanowire field-effect transistor (NW FET) biosensors are known to be highly sensitive devices that can detect extremely low concentrations of biomolecules. In this article, we present an analytical model alongside with numerical simulations to calculate the sensitivity of NW FET biosensors. The model accounts for biosensing dynamics as well as diffusion of ions in the solution and across the functionalized layer. The signal-to-noise ratio (SNR) is also estimated, which gives a lower limit in terms of sensitivity. The model is physics-based and is validated against COMSOL multiphysics simulations and experimental data. It predicts the biosensitivity down to the femtomolar concentration of biomolecules without any fitting parameter.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1337-1344"},"PeriodicalIF":2.9,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-13DOI: 10.1109/TED.2025.3525597
Hongying Yang;Yumeng Luo;Kwai Hei Li
This article presents the fabrication and characterization of a gallium nitride (GaN)-based optopair for the temperature measurement. The monolithic device comprises a pair of indium gallium nitride (InGaN)/GaN multiquantum well diodes, enabling both light emission and detection functions. The device exhibits a monotonic increase in photocurrent response with increasing temperature, attributed to the increased spectral overlap between the emission and absorption. The developed device with a size of $1.1times 1.3$ mm2 is capable of responding to changes in temperature range from $26.5~^{circ }$ C to $150~^{circ }$ C. With the advantages of fast response of less than 0.5 s, high resolution of $0.024~^{circ }$ C, and compact structure, the proposed chip-scale design shows great potential in the field of high-precision, real-time temperature measurement.
{"title":"GaN Monolithic Optopairs for Rapid and High-Resolution Temperature Measurements","authors":"Hongying Yang;Yumeng Luo;Kwai Hei Li","doi":"10.1109/TED.2025.3525597","DOIUrl":"https://doi.org/10.1109/TED.2025.3525597","url":null,"abstract":"This article presents the fabrication and characterization of a gallium nitride (GaN)-based optopair for the temperature measurement. The monolithic device comprises a pair of indium gallium nitride (InGaN)/GaN multiquantum well diodes, enabling both light emission and detection functions. The device exhibits a monotonic increase in photocurrent response with increasing temperature, attributed to the increased spectral overlap between the emission and absorption. The developed device with a size of <inline-formula> <tex-math>$1.1times 1.3$ </tex-math></inline-formula> mm2 is capable of responding to changes in temperature range from <inline-formula> <tex-math>$26.5~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$150~^{circ }$ </tex-math></inline-formula>C. With the advantages of fast response of less than 0.5 s, high resolution of <inline-formula> <tex-math>$0.024~^{circ }$ </tex-math></inline-formula>C, and compact structure, the proposed chip-scale design shows great potential in the field of high-precision, real-time temperature measurement.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1191-1196"},"PeriodicalIF":2.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Inspired by biological neuromorphological systems, organic synaptic transistors (OSTs) have attracted wide attention due to their potential applications in the development of artificial intelligence. At present, the planar OSTs face great challenges in achieving low power consumption and short channel effect, while the vertical OSTs can simulate synaptic characteristics at low voltage owing to its short channel length and unique working principle. Here, we smoothly fabricated vertical structure transistors based on polyvinyl alcohol (PVA) gate dielectrics for the first time by solution method and achieved excellent electrical properties when the gate voltage was only −5 V. Subsequently, the conductivity and carrier transmission efficiency of the device were effectively improved by organic lithium salt-doped PVA gate dielectric, on the basis of which a neural morphological device based on vertical structure was constructed perfectly. By using the electric-double-layer (EDL) capacitance effect and electrochemical doping, the device can achieve low-voltage operation and typical synaptic functions successfully, including excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), long-term potentiation (LTP), and memory refresh. Moreover, the implemented PPF can be extended to simulate pain perception and sensitization. This work shows the great potential of PVA-gated OST based on vertical structure in neuromorphologic applications, facilitating the development of emerging neural morphological systems as well as future artificial neural networks.
{"title":"Vertical Organic Synaptic Transistor Based on Electrolyte Gate Dielectric for Emulating Short-Term Synaptic Plasticity and Pain Perception","authors":"Yujiao Li;Gang He;Qian Gao;Can Fu;Qingxuan Li;Shanshan Jiang;Huanhuan Wei","doi":"10.1109/TED.2025.3526743","DOIUrl":"https://doi.org/10.1109/TED.2025.3526743","url":null,"abstract":"Inspired by biological neuromorphological systems, organic synaptic transistors (OSTs) have attracted wide attention due to their potential applications in the development of artificial intelligence. At present, the planar OSTs face great challenges in achieving low power consumption and short channel effect, while the vertical OSTs can simulate synaptic characteristics at low voltage owing to its short channel length and unique working principle. Here, we smoothly fabricated vertical structure transistors based on polyvinyl alcohol (PVA) gate dielectrics for the first time by solution method and achieved excellent electrical properties when the gate voltage was only −5 V. Subsequently, the conductivity and carrier transmission efficiency of the device were effectively improved by organic lithium salt-doped PVA gate dielectric, on the basis of which a neural morphological device based on vertical structure was constructed perfectly. By using the electric-double-layer (EDL) capacitance effect and electrochemical doping, the device can achieve low-voltage operation and typical synaptic functions successfully, including excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), long-term potentiation (LTP), and memory refresh. Moreover, the implemented PPF can be extended to simulate pain perception and sensitization. This work shows the great potential of PVA-gated OST based on vertical structure in neuromorphologic applications, facilitating the development of emerging neural morphological systems as well as future artificial neural networks.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1301-1307"},"PeriodicalIF":2.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-13DOI: 10.1109/TED.2025.3525605
Feng Zhang;Jia-Ji Feng;Xin-Yin Cao;Tien-Fu Yang;Yu-Shan Cho;Ji-Tao Yang;Yue-Yi Zhang;Tsun-Hsu Chang;Chao-Hai Du
Gyrotron driven by the axis-encircling electron beam is a pathway for generating frequency-tunable terahertz radiation on multiple harmonics. In this article, a large-orbit gyrotron (LOG) is designed, manufactured, and experimentally investigated. A magnetic cusp gun (MCG), demonstrating high robustness over a broad range of magnetic fields, has been developed to generate an axis-encircling electron beam with a constant pitch factor of 1.5 and a velocity spread of less than 2%. As the magnetic field strength adjusted at the operating voltage/current of 45 kV/0.7 A, the gyrotron is demonstrated to stably operate at the fundamental harmonic TE12 mode and the second harmonic TE24 mode, at the respective dual bands. The fundamental harmonic oscillation can achieve a wideband continuous frequency tuning range of 5.27 GHz around 160 GHz, with a maximum power of 7.42 kW, corresponding to a working efficiency of 23.5%, and the second harmonic operation can obtain a maximum power of 2.9 kW and an efficiency of 9.2%, with a continuous frequency tuning range of 1 GHz near 391 GHz. The quantitative agreement between experimental results and theoretical calculations indicates the reliability and correctness of the implemented gyrotron system, promising in achieving multiband oscillations at various cyclotron harmonics.
{"title":"Dual-Band Terahertz Harmonic Gyrotron Driven by Axis-Encircling Electron Beam","authors":"Feng Zhang;Jia-Ji Feng;Xin-Yin Cao;Tien-Fu Yang;Yu-Shan Cho;Ji-Tao Yang;Yue-Yi Zhang;Tsun-Hsu Chang;Chao-Hai Du","doi":"10.1109/TED.2025.3525605","DOIUrl":"https://doi.org/10.1109/TED.2025.3525605","url":null,"abstract":"Gyrotron driven by the axis-encircling electron beam is a pathway for generating frequency-tunable terahertz radiation on multiple harmonics. In this article, a large-orbit gyrotron (LOG) is designed, manufactured, and experimentally investigated. A magnetic cusp gun (MCG), demonstrating high robustness over a broad range of magnetic fields, has been developed to generate an axis-encircling electron beam with a constant pitch factor of 1.5 and a velocity spread of less than 2%. As the magnetic field strength adjusted at the operating voltage/current of 45 kV/0.7 A, the gyrotron is demonstrated to stably operate at the fundamental harmonic TE12 mode and the second harmonic TE24 mode, at the respective dual bands. The fundamental harmonic oscillation can achieve a wideband continuous frequency tuning range of 5.27 GHz around 160 GHz, with a maximum power of 7.42 kW, corresponding to a working efficiency of 23.5%, and the second harmonic operation can obtain a maximum power of 2.9 kW and an efficiency of 9.2%, with a continuous frequency tuning range of 1 GHz near 391 GHz. The quantitative agreement between experimental results and theoretical calculations indicates the reliability and correctness of the implemented gyrotron system, promising in achieving multiband oscillations at various cyclotron harmonics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1390-1395"},"PeriodicalIF":2.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-10DOI: 10.1109/TED.2025.3526122
C. Zhang;Jinchi Cai;P. C. Yin;Z. X. Su;X. K. Zhang;L. Zeng;Z. Zhang;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei
To shorten the design cycle of the 2-D axisymmetric electron gun, a new design methodology is reported in this article. Unlike the method of iterating the electron gun structure through particle simulations, for the primary beam optics design in the anode-cathode gap, this method mainly needs pure electrostatic simulations to achieve the target beam-edge potential profiles. Based on such an approach, the required electron gun structure, including the cathode, control electrode, and anode, can be quickly obtained. The subsequent particle simulations for handling higher order effects typically require minor geometry adjustments relative to the anode-cathode gap to complete the whole design. Following the proposed procedure, the results show that the target beam parameter with good trajectory laminarity would be obtained. The simulations on electron guns with three different configurations also reveal that any control electrode could achieve the same goal if it satisfies the target beam-edge potential profiles. Finally, the factors affecting the electron laminarity are discussed using one of the electron gun configurations. After that, a set of clear and complete primary beam optics design processes for the electron gun is summarized.
{"title":"Fast Electron Gun Design Methodology Based on Fitting the Beam-Edge Potential Profiles","authors":"C. Zhang;Jinchi Cai;P. C. Yin;Z. X. Su;X. K. Zhang;L. Zeng;Z. Zhang;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei","doi":"10.1109/TED.2025.3526122","DOIUrl":"https://doi.org/10.1109/TED.2025.3526122","url":null,"abstract":"To shorten the design cycle of the 2-D axisymmetric electron gun, a new design methodology is reported in this article. Unlike the method of iterating the electron gun structure through particle simulations, for the primary beam optics design in the anode-cathode gap, this method mainly needs pure electrostatic simulations to achieve the target beam-edge potential profiles. Based on such an approach, the required electron gun structure, including the cathode, control electrode, and anode, can be quickly obtained. The subsequent particle simulations for handling higher order effects typically require minor geometry adjustments relative to the anode-cathode gap to complete the whole design. Following the proposed procedure, the results show that the target beam parameter with good trajectory laminarity would be obtained. The simulations on electron guns with three different configurations also reveal that any control electrode could achieve the same goal if it satisfies the target beam-edge potential profiles. Finally, the factors affecting the electron laminarity are discussed using one of the electron gun configurations. After that, a set of clear and complete primary beam optics design processes for the electron gun is summarized.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1404-1411"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High-performance thin-film transistors (TFTs) are crucial for advanced displays. The use of metal oxide (MO) as an excellent semiconductor to achieve high-mobility TFTs comes with certain challenges, such as a severely negative threshold voltage (${V} _{th}$ ) and instability. These issues are attributed to defects and impurities within MO thin films, specifically oxygen vacancies and chemisorbed oxygens. Addressing these challenges is essential, prompting a study on improved fabrication strategies. In this work, we investigated annealing strategies to enhance the performance of indium tungsten oxide (IWO) TFTs. A two-step annealing approach was proposed to balance the concentration of oxygen vacancies and chemisorbed oxygens. This method effectively boosted the field-effect mobility ($mu _{FE}$ ) of IWO TFTs to 58 cm2/Vs, concurrently achieving a small negative ${V} _{th}$ of −3.5 V and a favorable subthreshold swing (SS) of 0.35 V/dec. The proposed mechanism was validated through technology computer-aided design (TCAD) device simulation and low-frequency noise (LFN) analysis. The law of annealing IWO TFTs was analyzed based on the results obtained from postannealing experiments conducted at variable temperatures. The entirety of the experimental findings and conclusions is anticipated to provide valuable insights for the fabrication of high-mobility IWO TFTs.
{"title":"Annealing Strategy Toward Achieving High-Performance Indium Tungsten Oxide Thin-Film Transistors by Equilibrating Oxygen Vacancy and Chemisorbed Oxygen","authors":"Zhiying Chen;Yan Yan;Guanglong Ding;Ye Zhou;Suting Han;Meng Zhang","doi":"10.1109/TED.2025.3525613","DOIUrl":"https://doi.org/10.1109/TED.2025.3525613","url":null,"abstract":"High-performance thin-film transistors (TFTs) are crucial for advanced displays. The use of metal oxide (MO) as an excellent semiconductor to achieve high-mobility TFTs comes with certain challenges, such as a severely negative threshold voltage (<inline-formula> <tex-math>${V} _{th}$ </tex-math></inline-formula>) and instability. These issues are attributed to defects and impurities within MO thin films, specifically oxygen vacancies and chemisorbed oxygens. Addressing these challenges is essential, prompting a study on improved fabrication strategies. In this work, we investigated annealing strategies to enhance the performance of indium tungsten oxide (IWO) TFTs. A two-step annealing approach was proposed to balance the concentration of oxygen vacancies and chemisorbed oxygens. This method effectively boosted the field-effect mobility (<inline-formula> <tex-math>$mu _{FE}$ </tex-math></inline-formula>) of IWO TFTs to 58 cm2/Vs, concurrently achieving a small negative <inline-formula> <tex-math>${V} _{th}$ </tex-math></inline-formula> of −3.5 V and a favorable subthreshold swing (SS) of 0.35 V/dec. The proposed mechanism was validated through technology computer-aided design (TCAD) device simulation and low-frequency noise (LFN) analysis. The law of annealing IWO TFTs was analyzed based on the results obtained from postannealing experiments conducted at variable temperatures. The entirety of the experimental findings and conclusions is anticipated to provide valuable insights for the fabrication of high-mobility IWO TFTs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1167-1173"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Filament-free bulk resistive-switching random access memory (RRAM) devices have been proposed to offer multilevel conductance states with less variations and noise and forming-free operation for neuromorphic computing applications. Understanding conduction mechanism and switching dynamics of filament-free bulk RRAM devices is crucial to optimize device characteristics and to build large-scale arrays for compute in memory and neuromorphic computing applications. Here, we first analyze switching characteristics of bulk RRAM by temperature-dependent I–V measurements. We then present a quantitative physical model describing the conduction across trilayer stack by a series combination of multiple conduction mechanisms across each layer. Using this model and fitting it to the experimental characteristics of filament-free bulk RRAM devices, we investigate the origin of bulk switching in trilayer stacks. We demonstrate that our model can be used as a guide to design bulk switching RRAM devices from multilayer stacks of metal oxides.
{"title":"Modeling of Conduction Mechanism in Filament-Free Multilayer Bulk RRAM","authors":"Yucheng Zhou;Ashwani Kumar;Jaeseoung Park;Yuyi Zhang;Yue Zhou;Seonghyun Kim;Ertugrul Cubukcu;Duygu Kuzum","doi":"10.1109/TED.2024.3521953","DOIUrl":"https://doi.org/10.1109/TED.2024.3521953","url":null,"abstract":"Filament-free bulk resistive-switching random access memory (RRAM) devices have been proposed to offer multilevel conductance states with less variations and noise and forming-free operation for neuromorphic computing applications. Understanding conduction mechanism and switching dynamics of filament-free bulk RRAM devices is crucial to optimize device characteristics and to build large-scale arrays for compute in memory and neuromorphic computing applications. Here, we first analyze switching characteristics of bulk RRAM by temperature-dependent I–V measurements. We then present a quantitative physical model describing the conduction across trilayer stack by a series combination of multiple conduction mechanisms across each layer. Using this model and fitting it to the experimental characteristics of filament-free bulk RRAM devices, we investigate the origin of bulk switching in trilayer stacks. We demonstrate that our model can be used as a guide to design bulk switching RRAM devices from multilayer stacks of metal oxides.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"646-652"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The improved thermal stability of cobalt silicide (CoSi2) becomes pivotal with the introduction of a 4F2 cell architecture, featuring a vertical pillar transistor for DRAM application. To tackle this challenge, carbon preamorphization implantation (C PAI) was employed. This study systematically investigates the effects of C PAI on both the formation and thermal stability of CoSi2, taking into account distinct cobalt deposition methods, namely, physical vapor deposition (PVD) and chemical vapor deposition (CVD). Results demonstrate that the presence of carbon delays the nucleation temperature of CoSi2 approximately 50 °C and significantly enhances the morphology and thermal stability of CoSi2 for PVD Co. These observed effects can be explained by the segregation of carbon atoms at the grain boundaries and CoSi2/Si interface. However, the introduction of carbon has a detrimental effect for CVD Co. The variations in results are attributed to variations in the deposition mechanism. This insight provides valuable considerations for optimizing the thermal stability of CoSi2s in the context of future DRAM devices.
{"title":"Effect of Carbon on the Formation of Cobalt Silicide and Thermal Stability for DRAM Application: A Comparative Study on PVD and CVD Methods","authors":"Yanping He;Shujuan Mao;Jing Xu;Xianglie Sun;Jianfeng Gao;Weibing Liu;Jinbiao Liu;Xu Chen;Junfeng Li;Xiaolei Wang;Guilei Wang;Chao Zhao;Jun Luo","doi":"10.1109/TED.2024.3523263","DOIUrl":"https://doi.org/10.1109/TED.2024.3523263","url":null,"abstract":"The improved thermal stability of cobalt silicide (CoSi2) becomes pivotal with the introduction of a 4F2 cell architecture, featuring a vertical pillar transistor for DRAM application. To tackle this challenge, carbon preamorphization implantation (C PAI) was employed. This study systematically investigates the effects of C PAI on both the formation and thermal stability of CoSi2, taking into account distinct cobalt deposition methods, namely, physical vapor deposition (PVD) and chemical vapor deposition (CVD). Results demonstrate that the presence of carbon delays the nucleation temperature of CoSi2 approximately 50 °C and significantly enhances the morphology and thermal stability of CoSi2 for PVD Co. These observed effects can be explained by the segregation of carbon atoms at the grain boundaries and CoSi2/Si interface. However, the introduction of carbon has a detrimental effect for CVD Co. The variations in results are attributed to variations in the deposition mechanism. This insight provides valuable considerations for optimizing the thermal stability of CoSi2s in the context of future DRAM devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"653-658"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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