Pub Date : 2025-07-28DOI: 10.1109/TED.2025.3589200
Radhe Shyam;Harshita Rai;Subhajit Jana;Shubham Sharma;Takaaki Manaka;Shyam S. Pandey;Rajiv Prakash
In this work, we report the synthesis of MXene (Ti2CTX) nanobelts from its MAX (Ti2AlC) phase via hydrothermal treatment with 5 M NaOH. This is an environmentally friendly and safer alternative to traditional HF-based etching processes. This approach reduces risks to health and handling concerning HF but maintains the exfoliation quality of the MXene layers. The Ti2CTX nanobelts were then incorporated at various concentrations into poly(3-hexylthiophene) (P3HT) matrices to form nanocomposite films using the unidirectional floating film transfer method (UFTM). These aligned hybrid films showed dramatically improved charge transport properties compared to pristine P3HT. For instance, adding 3% (v/v) MXene increased the charge carrier mobility from 0.05 cm2V${}^{-{1}}$ s${}^{-{1}}$ (pristine P3HT) to 0.57 cm2V${}^{-{1}}$ s${}^{-{1}}$ with a high on/off current ratio of $10^{{5}}$ . We attribute this improvement to the template effect of the MXene nanobelts, which promotes the orientational alignment of P3HT chains, thus facilitating efficient charge transport pathways.
本文报道了以MAX （Ti2AlC）相为原料，用5 M NaOH水热法制备MXene （Ti2CTX）纳米带。这是一种环保和安全的替代传统的基于hf的蚀刻工艺。这种方法降低了对健康和处理HF的风险，但保持了MXene层的去角质质量。然后将不同浓度的Ti2CTX纳米带掺入聚（3-己基噻吩）（P3HT）基质中，采用单向浮膜转移法（UFTM）形成纳米复合薄膜。与原始P3HT相比，这些排列的杂化膜显示出显著改善的电荷输运特性。例如，加入3% （v/v）的MXene可将载流子迁移率从0.05 cm2V ${}^{-{1}}$ s ${}^{-{1}}$（原始P3HT）提高到0.57 cm2V ${}^{-{1}}$ s ${}^{-{1}}$，且通断电流比高达$10^{{5}}$。我们将这种改进归因于MXene纳米带的模板效应，它促进了P3HT链的取向排列，从而促进了有效的电荷传输途径。
{"title":"Enhanced Charge Transport in Organic Thin-Film Transistors Through Environmentally Benign MXene-P3HT Nanocomposites","authors":"Radhe Shyam;Harshita Rai;Subhajit Jana;Shubham Sharma;Takaaki Manaka;Shyam S. Pandey;Rajiv Prakash","doi":"10.1109/TED.2025.3589200","DOIUrl":"https://doi.org/10.1109/TED.2025.3589200","url":null,"abstract":"In this work, we report the synthesis of MXene (Ti2CTX) nanobelts from its MAX (Ti2AlC) phase via hydrothermal treatment with 5 M NaOH. This is an environmentally friendly and safer alternative to traditional HF-based etching processes. This approach reduces risks to health and handling concerning HF but maintains the exfoliation quality of the MXene layers. The Ti2CTX nanobelts were then incorporated at various concentrations into poly(3-hexylthiophene) (P3HT) matrices to form nanocomposite films using the unidirectional floating film transfer method (UFTM). These aligned hybrid films showed dramatically improved charge transport properties compared to pristine P3HT. For instance, adding 3% (v/v) MXene increased the charge carrier mobility from 0.05 cm2V<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>s<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula> (pristine P3HT) to 0.57 cm2V<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>s<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula> with a high on/off current ratio of <inline-formula> <tex-math>$10^{{5}}$ </tex-math></inline-formula>. We attribute this improvement to the template effect of the MXene nanobelts, which promotes the orientational alignment of P3HT chains, thus facilitating efficient charge transport pathways.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4963-4968"},"PeriodicalIF":3.2,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, an analytical model for the retention behaviors of analog resistive random access memory (RRAM) is proposed. The model accounts for the diffusion of oxygen vacancies (${V}_{O}$ ), the recombination of ${V}_{O}$ , and the impact of programming pulsewidth on the number of metastable oxygen vacancies. It enables the analysis of the conductivity drift characteristics of RRAM under various resistance states, temperatures, and programming pulse widths. The model is in good agreement with our experimental results of analog RRAM arrays with high/low ${V}_{O}$ diffusion coefficients, confirming the accuracy and practicability of the model. Additionally, the model is integrated into a fully connected RRAM-based neural network to evaluate the reliability of the network. Furthermore, this article introduces a novel weight refresh strategy based on the accurate retention time (ART), defined as the period during which neural network accuracy degrades slowly, to balance the trade-off between neural network performance and power consumption. The prediction scheme of ART employs a two-stage machine learning framework. The predicted results on the neural network demonstrate that the strategy maintains high accuracy ($le 2$ % degradation) while minimizing refresh frequency. This work bridges physical mechanisms with neural network optimization, offering a scalable, low-power consumption solution for computation-in-memory (CIM) systems.
{"title":"An Analytical Model of RRAM Relaxation Effect and Its Application for Neural Network Weight Refresh Strategy in Large-Scale RRAM Array","authors":"Xingyu Zhai;Yu Kang;Liang Tian;Ao Du;Chenyi Wang;Yi Wang;Yinshui Xia;Yuda Zhao;Wenchao Chen","doi":"10.1109/TED.2025.3591090","DOIUrl":"https://doi.org/10.1109/TED.2025.3591090","url":null,"abstract":"In this article, an analytical model for the retention behaviors of analog resistive random access memory (RRAM) is proposed. The model accounts for the diffusion of oxygen vacancies (<inline-formula> <tex-math>${V}_{O}$ </tex-math></inline-formula>), the recombination of <inline-formula> <tex-math>${V}_{O}$ </tex-math></inline-formula>, and the impact of programming pulsewidth on the number of metastable oxygen vacancies. It enables the analysis of the conductivity drift characteristics of RRAM under various resistance states, temperatures, and programming pulse widths. The model is in good agreement with our experimental results of analog RRAM arrays with high/low <inline-formula> <tex-math>${V}_{O}$ </tex-math></inline-formula> diffusion coefficients, confirming the accuracy and practicability of the model. Additionally, the model is integrated into a fully connected RRAM-based neural network to evaluate the reliability of the network. Furthermore, this article introduces a novel weight refresh strategy based on the accurate retention time (ART), defined as the period during which neural network accuracy degrades slowly, to balance the trade-off between neural network performance and power consumption. The prediction scheme of ART employs a two-stage machine learning framework. The predicted results on the neural network demonstrate that the strategy maintains high accuracy (<inline-formula> <tex-math>$le 2$ </tex-math></inline-formula>% degradation) while minimizing refresh frequency. This work bridges physical mechanisms with neural network optimization, offering a scalable, low-power consumption solution for computation-in-memory (CIM) systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4929-4935"},"PeriodicalIF":3.2,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Although CMOS-like inverters based on ambipolar thin-film transistors (TFTs) have garnered significant interest due to their simplified fabrication and high integration density, achieving high-performance ambipolar TFTs remains challenging. In this work, we systematically investigate the effects of different annealing and passivation schemes—including annealing without passivation (AWP), annealing before passivation (ABP), and annealing after passivation (AAP)—using SiO2, Al2O3, and HfO2 passivation layers (PVLs) on the performance of SnO TFTs. Among them, the AAP-Al2O3 device exhibits the most balanced p-type and n-type conduction and superior negative bias stress (NBS) stability. Furthermore, the ambipolar characteristics, including the on/off current ratio, subthreshold swing (SS), and bias stress stability, were significantly enhanced by fluorine (F) plasma treatment on the SnO channel. Finally, a CMOS-like inverter composed of two identical F-plasma-treated ambipolar SnO TFTs achieved an exceptionally high voltage gain of 289 at a low supply voltage of 8 V. This work offers a simple and effective strategy for developing thin-film CMOS-like circuits suitable for the next-generation cost-effective electronics.
{"title":"High-Gain CMOS-Like Inverters Based on F-Plasma-Treated Ambipolar SnO Thin-Film Transistors","authors":"Zening Gao;Peng Dai;Ning Wang;Yiwen Yao;Jialong Song;Jinlong Xiang;Yiming Wang;Jiawei Zhang;Yuxiang Li;Qian Xin;Aimin Song","doi":"10.1109/TED.2025.3590361","DOIUrl":"https://doi.org/10.1109/TED.2025.3590361","url":null,"abstract":"Although CMOS-like inverters based on ambipolar thin-film transistors (TFTs) have garnered significant interest due to their simplified fabrication and high integration density, achieving high-performance ambipolar TFTs remains challenging. In this work, we systematically investigate the effects of different annealing and passivation schemes—including annealing without passivation (AWP), annealing before passivation (ABP), and annealing after passivation (AAP)—using SiO2, Al2O3, and HfO2 passivation layers (PVLs) on the performance of SnO TFTs. Among them, the AAP-Al2O3 device exhibits the most balanced p-type and n-type conduction and superior negative bias stress (NBS) stability. Furthermore, the ambipolar characteristics, including the <sc>on</small>/<sc>off</small> current ratio, subthreshold swing (SS), and bias stress stability, were significantly enhanced by fluorine (F) plasma treatment on the SnO channel. Finally, a CMOS-like inverter composed of two identical F-plasma-treated ambipolar SnO TFTs achieved an exceptionally high voltage gain of 289 at a low supply voltage of 8 V. This work offers a simple and effective strategy for developing thin-film CMOS-like circuits suitable for the next-generation cost-effective electronics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4976-4982"},"PeriodicalIF":3.2,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-28DOI: 10.1109/TED.2025.3591758
Ranajoy Bhattacharya;Cesar Segura Del Rio;Winston Chern;Jake West;Isaac Wolstenholme;Mason Cannon;Gerardo Herrera;Marcus Pearlman;Akintunde Ibitayo Akinwande;Allen L. Garner;Jim Browning
A low-frequency (561 MHz), injected beam, and linear format crossed-field amplifier (CFA) using gated field emission arrays (GFEAs) has been experimentally studied and compared with simulation. The CFA uses a copper wire on Teflon meander line circuit with retardation of ~21. Eight silicon tip GFEA dies were used as the injected electron source to provide up to 160 mA. A segmented end-collector system (nine electrodes) was used to measure the spatial variation of the beam current with and without gain. A gain of ~5.5 dB was measured for a sole-circuit voltage of −2.9 kV, an injected beam current of ~160 mA, an applied magnetic field of 0.0125 T, a radio frequency (RF) input power of 15 W, and a sole-circuit gap of 2 cm. A CST particle in-cell model shows a high gain (~1–2 dB) than the experiment, but the gain variation versus injected current, voltage, and magnetic field matches well. Variation with RF input power shows a significant decrease in gain above 15 W in the experiment with the decrease seen in simulation observed after 25 W. Analysis of the end-collector current shows a rapid decrease after 12 W in the experiment and 25 W in the simulation. This result occurs because the highly cycloidal electrons are close to the CFA circuit and get collected on the circuit before providing amplification energy. This observation is confirmed in simulation, which shows that the current going to the circuit rapidly increases and the end-collector current rapidly decreases. This effect also accounts for the higher gain observed in simulation. These experiments provide a basis for using gated field emitters to study beam–wave interactions in microwave vacuum electron devices.
{"title":"Radio Frequency Amplification in a Linear Crossed-Field Amplifier Using Cold Cathodes","authors":"Ranajoy Bhattacharya;Cesar Segura Del Rio;Winston Chern;Jake West;Isaac Wolstenholme;Mason Cannon;Gerardo Herrera;Marcus Pearlman;Akintunde Ibitayo Akinwande;Allen L. Garner;Jim Browning","doi":"10.1109/TED.2025.3591758","DOIUrl":"https://doi.org/10.1109/TED.2025.3591758","url":null,"abstract":"A low-frequency (561 MHz), injected beam, and linear format crossed-field amplifier (CFA) using gated field emission arrays (GFEAs) has been experimentally studied and compared with simulation. The CFA uses a copper wire on Teflon meander line circuit with retardation of ~21. Eight silicon tip GFEA dies were used as the injected electron source to provide up to 160 mA. A segmented end-collector system (nine electrodes) was used to measure the spatial variation of the beam current with and without gain. A gain of ~5.5 dB was measured for a sole-circuit voltage of −2.9 kV, an injected beam current of ~160 mA, an applied magnetic field of 0.0125 T, a radio frequency (RF) input power of 15 W, and a sole-circuit gap of 2 cm. A CST particle in-cell model shows a high gain (~1–2 dB) than the experiment, but the gain variation versus injected current, voltage, and magnetic field matches well. Variation with RF input power shows a significant decrease in gain above 15 W in the experiment with the decrease seen in simulation observed after 25 W. Analysis of the end-collector current shows a rapid decrease after 12 W in the experiment and 25 W in the simulation. This result occurs because the highly cycloidal electrons are close to the CFA circuit and get collected on the circuit before providing amplification energy. This observation is confirmed in simulation, which shows that the current going to the circuit rapidly increases and the end-collector current rapidly decreases. This effect also accounts for the higher gain observed in simulation. These experiments provide a basis for using gated field emitters to study beam–wave interactions in microwave vacuum electron devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"5209-5215"},"PeriodicalIF":3.2,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144904843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/TED.2025.3585331
{"title":"Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications","authors":"","doi":"10.1109/TED.2025.3585331","DOIUrl":"https://doi.org/10.1109/TED.2025.3585331","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4594-4595"},"PeriodicalIF":2.9,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11097067","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/TED.2025.3585327
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/TED.2025.3585327","DOIUrl":"https://doi.org/10.1109/TED.2025.3585327","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4590-4591"},"PeriodicalIF":2.9,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11097070","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/TED.2025.3585333
{"title":"IEEE Transactions on Electron Devices Information for Authors","authors":"","doi":"10.1109/TED.2025.3585333","DOIUrl":"https://doi.org/10.1109/TED.2025.3585333","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"C3-C3"},"PeriodicalIF":2.9,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11097071","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/TED.2025.3589546
Zikang Yao;Danyang Chen;Tianning Cui;Yulong Dong;Zhiyu Lin;Jingquan Liu;Mengwei Si;Xiuyan Li
This study systematically investigates the modulation of the memory window (MW) in interfacial layer (IL)-free and Hfx $Zr_{{1}-{x}}$ O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with oxide channel by engineering oxide semiconductor materials, annealing processes, and polarization in HZO. Our findings reveal that the MW in such an FeFET is predominantly governed by the positive charge supply capability of the semiconductor layer and the interface properties between the ferroelectric (FE) layer and the semiconductor. Specifically, higher doping concentrations in the channel material and less interface trapping are shown to enhance the MW. In contrast, polarization shows limited effect. These results provide critical insights into the underlying mechanisms of MW optimization in FeFETs with oxide semiconductor channels.
{"title":"Impact of Channel Material, Interface Quality, and Polarization on Memory Window of Interfacial Layer-Free FeFET With Oxide Semiconductor","authors":"Zikang Yao;Danyang Chen;Tianning Cui;Yulong Dong;Zhiyu Lin;Jingquan Liu;Mengwei Si;Xiuyan Li","doi":"10.1109/TED.2025.3589546","DOIUrl":"https://doi.org/10.1109/TED.2025.3589546","url":null,"abstract":"This study systematically investigates the modulation of the memory window (MW) in interfacial layer (IL)-free and Hfx <inline-formula> <tex-math>$Zr_{{1}-{x}}$ </tex-math></inline-formula>O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with oxide channel by engineering oxide semiconductor materials, annealing processes, and polarization in HZO. Our findings reveal that the MW in such an FeFET is predominantly governed by the positive charge supply capability of the semiconductor layer and the interface properties between the ferroelectric (FE) layer and the semiconductor. Specifically, higher doping concentrations in the channel material and less interface trapping are shown to enhance the MW. In contrast, polarization shows limited effect. These results provide critical insights into the underlying mechanisms of MW optimization in FeFETs with oxide semiconductor channels.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4872-4877"},"PeriodicalIF":3.2,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/TED.2025.3585325
{"title":"IEEE Transactions on Electron Devices Publication Information","authors":"","doi":"10.1109/TED.2025.3585325","DOIUrl":"https://doi.org/10.1109/TED.2025.3585325","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"C2-C2"},"PeriodicalIF":2.9,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11097066","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/TED.2025.3585329
{"title":"Reliability of Advanced Nodes","authors":"","doi":"10.1109/TED.2025.3585329","DOIUrl":"https://doi.org/10.1109/TED.2025.3585329","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4592-4593"},"PeriodicalIF":2.9,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11097069","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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