Pub Date : 2025-01-28DOI: 10.1109/TED.2025.3530863
Du-Ting Cheng;Ting-Kai Chang;Yao-Han Dong;Ching-Fuh Lin
This study explores methods to enhance the responsivity of silver/silicon Schottky diode-based photodetectors in the mid-infrared wavelength range. Traditional infrared photodetectors primarily use compound semiconductors, but their scarcity and high cost limit application areas. This research employs silicon as the main material to reduce processing costs and improve integration with integrated circuits (ICs). By forming a Schottky contact between the metal and silicon, this study utilizes the internal photoemission absorbance mechanism to effectively extend the detection range to infrared light with energy lower than the semiconductor bandgap. Additionally, by controlling the morphology of the metal thin film to induce stronger local surface plasmon resonance, the absorbance and responsivity of light are significantly enhanced. The results show that under a 3460-nm infrared light source, the responsivity increased from 0.4154 to $3.8615~mu $ A/W, nearly a tenfold improvement. Furthermore, through the study of hot carrier generation and diffusion, the responsivity of the device in the mid-infrared wavelength range was further enhanced, reaching $11.0964~mu $ A/W. Moreover, the device could measure signals at wavelengths up to 6000 nm, surpassing the cutoff wavelength limitation. This demonstrates that the methods used in this study can effectively improve the performance of silicon-based Schottky detectors.
{"title":"Advancing Mid-Infrared Detection in Silicon-Based Schottky Photodetectors via Metal Film Morphology and Hot Carrier Effect","authors":"Du-Ting Cheng;Ting-Kai Chang;Yao-Han Dong;Ching-Fuh Lin","doi":"10.1109/TED.2025.3530863","DOIUrl":"https://doi.org/10.1109/TED.2025.3530863","url":null,"abstract":"This study explores methods to enhance the responsivity of silver/silicon Schottky diode-based photodetectors in the mid-infrared wavelength range. Traditional infrared photodetectors primarily use compound semiconductors, but their scarcity and high cost limit application areas. This research employs silicon as the main material to reduce processing costs and improve integration with integrated circuits (ICs). By forming a Schottky contact between the metal and silicon, this study utilizes the internal photoemission absorbance mechanism to effectively extend the detection range to infrared light with energy lower than the semiconductor bandgap. Additionally, by controlling the morphology of the metal thin film to induce stronger local surface plasmon resonance, the absorbance and responsivity of light are significantly enhanced. The results show that under a 3460-nm infrared light source, the responsivity increased from 0.4154 to <inline-formula> <tex-math>$3.8615~mu $ </tex-math></inline-formula>A/W, nearly a tenfold improvement. Furthermore, through the study of hot carrier generation and diffusion, the responsivity of the device in the mid-infrared wavelength range was further enhanced, reaching <inline-formula> <tex-math>$11.0964~mu $ </tex-math></inline-formula>A/W. Moreover, the device could measure signals at wavelengths up to 6000 nm, surpassing the cutoff wavelength limitation. This demonstrates that the methods used in this study can effectively improve the performance of silicon-based Schottky detectors.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1221-1228"},"PeriodicalIF":2.9,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-28DOI: 10.1109/TED.2025.3532417
Dajing Bian;Yue Xu;Yuanhao Bi;Zheng Li;Qiuzheng Wang
A high-performance single-photon avalanche diode (SPAD) is proposed based on 180-nm bipolar-CMOS-DMOS (BCD) technology. To enhance the photon detection probability (PDP), the primary multiplication region is formed at the interface of the P-type enrichment and high-voltage N-well (HVNW), which is deeper than that in traditional SPADs. At the same time, two extended multiplication regions on either side of the HVNW further facilitate the detection of photons. Lightly doped p-type epitaxial (P-epi) layers associated with the shallow trench isolation (STI) are introduced as guard rings to prevent premature edge breakdown (PEB) and reduce dark count rate (DCR). In particular, we investigate the impacts of various device parameters, including the guard ring width (GRW), the distance between STI and P-type enrichment, and the distance of P+ extending from the P-type enrichment on the performance of the SPADs. Through parametric optimization, the proposed SPAD obtains a high peak PDP of 81% at 555 nm and a near-infrared (NIR) PDP of 7.54% at 905 nm with a low DCR of 0.33 cps/$mu $ m2 at an excess voltage (${V} _{text {ex}}$ ) of 5 V. The full-width at half-maximum (FWHM) of the timing jitter at 905-nm wavelength is 220 ps. The optimized SPADs can be integrated into high-density arrays for low-cost imaging sensor applications.
{"title":"Design for an 81% Peak PDP and 0.33-cps/μm² DCR Si-SPADs at 5-V Excess Bias Voltage Based on 180-nm BCD Technology","authors":"Dajing Bian;Yue Xu;Yuanhao Bi;Zheng Li;Qiuzheng Wang","doi":"10.1109/TED.2025.3532417","DOIUrl":"https://doi.org/10.1109/TED.2025.3532417","url":null,"abstract":"A high-performance single-photon avalanche diode (SPAD) is proposed based on 180-nm bipolar-CMOS-DMOS (BCD) technology. To enhance the photon detection probability (PDP), the primary multiplication region is formed at the interface of the P-type enrichment and high-voltage N-well (HVNW), which is deeper than that in traditional SPADs. At the same time, two extended multiplication regions on either side of the HVNW further facilitate the detection of photons. Lightly doped p-type epitaxial (P-epi) layers associated with the shallow trench isolation (STI) are introduced as guard rings to prevent premature edge breakdown (PEB) and reduce dark count rate (DCR). In particular, we investigate the impacts of various device parameters, including the guard ring width (GRW), the distance between STI and P-type enrichment, and the distance of P+ extending from the P-type enrichment on the performance of the SPADs. Through parametric optimization, the proposed SPAD obtains a high peak PDP of 81% at 555 nm and a near-infrared (NIR) PDP of 7.54% at 905 nm with a low DCR of 0.33 cps/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m2 at an excess voltage (<inline-formula> <tex-math>${V} _{text {ex}}$ </tex-math></inline-formula>) of 5 V. The full-width at half-maximum (FWHM) of the timing jitter at 905-nm wavelength is 220 ps. The optimized SPADs can be integrated into high-density arrays for low-cost imaging sensor applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1242-1248"},"PeriodicalIF":2.9,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-28DOI: 10.1109/TED.2024.3523885
Patryk Golec;Eva Bestelink;Radu A. Sporea;Benjamin Iñiguez
We present the first physical compact model for an amorphous silicon source-gated transistor (SGT) with variable Schottky barrier height. The previously published empirical compact model and TCAD model of an SGT are used to identify dominant effects present. The compact model is then validated on real device measurements. The compact model aims to operate under common conditions and typically desirable regimes of operation for an SGT, such as the flat saturation regime occurring at a particularly low saturation voltage. The dominant injection mechanisms occur through thermionic and thermionic field emission, which are the contact effects present in an SGT. Thermionic emission tends to be dominant under most common conditions. The model is suitably accurate to be used as a representation of an SGT in a SPICE simulation. This can be seen as a first step toward analog circuit design with SGTs as compact models enable circuit designers to utilize new and unique devices.
{"title":"Physical Compact Model for Source-Gated Transistors for DC Application","authors":"Patryk Golec;Eva Bestelink;Radu A. Sporea;Benjamin Iñiguez","doi":"10.1109/TED.2024.3523885","DOIUrl":"https://doi.org/10.1109/TED.2024.3523885","url":null,"abstract":"We present the first physical compact model for an amorphous silicon source-gated transistor (SGT) with variable Schottky barrier height. The previously published empirical compact model and TCAD model of an SGT are used to identify dominant effects present. The compact model is then validated on real device measurements. The compact model aims to operate under common conditions and typically desirable regimes of operation for an SGT, such as the flat saturation regime occurring at a particularly low saturation voltage. The dominant injection mechanisms occur through thermionic and thermionic field emission, which are the contact effects present in an SGT. Thermionic emission tends to be dominant under most common conditions. The model is suitably accurate to be used as a representation of an SGT in a SPICE simulation. This can be seen as a first step toward analog circuit design with SGTs as compact models enable circuit designers to utilize new and unique devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"952-958"},"PeriodicalIF":2.9,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, total-ionizing-dose (TID) radiation-induced drain leakage current (${I} _{text {off}}$ ) degradation in p-GaN gate high electron mobility transistors (HEMTs) is studied. Irradiation-induced ${I} _{text {off}}$ degradation is dominated by source current and substrate current, and irradiation damage mechanism is revealed. Irradiation-induced holes are trapped at GaN channel under the gate and near the buffer/transition layer interface, which would lower energy barrier for electron injection and increase ${I} _{text {off}}$ . Electron traps are generated in the buffer layer under both irradiation and high electric field, which would raise energy barrier in the buffer for electron and suppress the increase of ${I} _{text {off}}$ . The combined effect of the hole trapping and the electron trap generation results in nonmonotonic degradation of ${I} _{text {off}}$ with TID. Deep-level transient spectroscopy and capacitance test results show that irradiation-induced electron trap is not recoverable, while the hole trapping under the gate could anneal with time.
{"title":"Total-Ionizing-Dose Radiation-Induced Leakage Current Degradation in p-GaN Gate HEMTs","authors":"Zhao Wang;Xin Zhou;Qingchen Jiang;Zhengyuan Peng;Hengjuan Wen;Qi Zhou;Zhao Qi;Ming Qiao;Zhaoji Li;Bo Zhang","doi":"10.1109/TED.2025.3528873","DOIUrl":"https://doi.org/10.1109/TED.2025.3528873","url":null,"abstract":"In this work, total-ionizing-dose (TID) radiation-induced drain leakage current (<inline-formula> <tex-math>${I} _{text {off}}$ </tex-math></inline-formula>) degradation in p-GaN gate high electron mobility transistors (HEMTs) is studied. Irradiation-induced <inline-formula> <tex-math>${I} _{text {off}}$ </tex-math></inline-formula> degradation is dominated by source current and substrate current, and irradiation damage mechanism is revealed. Irradiation-induced holes are trapped at GaN channel under the gate and near the buffer/transition layer interface, which would lower energy barrier for electron injection and increase <inline-formula> <tex-math>${I} _{text {off}}$ </tex-math></inline-formula>. Electron traps are generated in the buffer layer under both irradiation and high electric field, which would raise energy barrier in the buffer for electron and suppress the increase of <inline-formula> <tex-math>${I} _{text {off}}$ </tex-math></inline-formula>. The combined effect of the hole trapping and the electron trap generation results in nonmonotonic degradation of <inline-formula> <tex-math>${I} _{text {off}}$ </tex-math></inline-formula> with TID. Deep-level transient spectroscopy and capacitance test results show that irradiation-induced electron trap is not recoverable, while the hole trapping under the gate could anneal with time.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1002-1007"},"PeriodicalIF":2.9,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-28DOI: 10.1109/TED.2025.3530870
Tomoya Watanabe;Hidemasa Takahashi;Ryutaro Makisako;Akio Wakejima;Yuji Ando;Jun Suda
We fabricated a gated-anode diode employing an AlGaN/GaN high electron mobility transistor (HEMT) to serve as a rectification device in a 5.8-GHz band microwave wireless power transmission (WPT) system. To enhance the breakdown voltage and enable the devices to handle high power, a moderately doped contact layer was proposed and its impact on device performance was comprehensively investigated. We confirmed that medium doping facilitated depletion, achieving high breakdown voltage even with a short gate-to-contact spacing. However, an increase in contact resistance and a consequent decrease in forward current were observed as adverse effects. By optimizing the doping concentration, we successfully enhanced the breakdown voltage while suppressing the current drop, achieving a high-power density of 7.0 W/mm.
{"title":"Impact of a Moderately Doped Contact Layer on Breakdown Voltage in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification","authors":"Tomoya Watanabe;Hidemasa Takahashi;Ryutaro Makisako;Akio Wakejima;Yuji Ando;Jun Suda","doi":"10.1109/TED.2025.3530870","DOIUrl":"https://doi.org/10.1109/TED.2025.3530870","url":null,"abstract":"We fabricated a gated-anode diode employing an AlGaN/GaN high electron mobility transistor (HEMT) to serve as a rectification device in a 5.8-GHz band microwave wireless power transmission (WPT) system. To enhance the breakdown voltage and enable the devices to handle high power, a moderately doped contact layer was proposed and its impact on device performance was comprehensively investigated. We confirmed that medium doping facilitated depletion, achieving high breakdown voltage even with a short gate-to-contact spacing. However, an increase in contact resistance and a consequent decrease in forward current were observed as adverse effects. By optimizing the doping concentration, we successfully enhanced the breakdown voltage while suppressing the current drop, achieving a high-power density of 7.0 W/mm.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1008-1013"},"PeriodicalIF":2.9,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-28DOI: 10.1109/TED.2025.3529406
Linlin Wang;Yuan Wang;Pan Zhang;Pui-In Mak;Rui P. Martins;Xinyu Wu;Chen Wang
This article for the first time introduces the blue-sideband excitation (BSE) scheme to two types of 2-degree-of-freedom (2-DoF) weakly coupled electrostatic resonant sensors, i.e., a 2-DoF electrostatically coupled resonating system with parallel suspension beams (Device 1) and a 2-DoF coupled double-ended tuning fork (DETF) resonant device (Device 2), boosting the functionality of the mode localization phenomena and ultimately achieving distinct performance upgradation. The amplitude ratio (AR) is hence adopted as the readout metric for the sensitivity characterization with respect to different external stiffness perturbations introduced by the capacitive transduction. Three paradigms of AR were implemented in this subject, namely, intermodal AR (IM-AR), interresonator AR (IR-AR), and interresonator-IM-AR (IRIM-AR), owing to the feature of simultaneous multiple-mode excitation of BSE. A comparison regarding the coupled resonant devices subject to the conventional drive scheme and the BSE was conducted, where the experimental results indicated that more than two orders of magnitude enhancement in sensitivity were achieved with the BSE scheme, along with the possibility of a pronounced ~17 times improvement in the noise floor, as well as the capability of simultaneous multiple parameter extraction across different resonators and vibration modes within the coupled system. This work further verified the feasibility and effectiveness of the BSE scheme, demonstrating the potential of such a technique for sensing applications based on mode-localized resonant sensors, fostering ultrahigh performance augmentation.
{"title":"Enhanced Mode Localization in 2-DoF Weakly Coupled Electrostatic MEMS Resonant Sensor Devices via Blue-Sideband Excitation","authors":"Linlin Wang;Yuan Wang;Pan Zhang;Pui-In Mak;Rui P. Martins;Xinyu Wu;Chen Wang","doi":"10.1109/TED.2025.3529406","DOIUrl":"https://doi.org/10.1109/TED.2025.3529406","url":null,"abstract":"This article for the first time introduces the blue-sideband excitation (BSE) scheme to two types of 2-degree-of-freedom (2-DoF) weakly coupled electrostatic resonant sensors, i.e., a 2-DoF electrostatically coupled resonating system with parallel suspension beams (Device 1) and a 2-DoF coupled double-ended tuning fork (DETF) resonant device (Device 2), boosting the functionality of the mode localization phenomena and ultimately achieving distinct performance upgradation. The amplitude ratio (AR) is hence adopted as the readout metric for the sensitivity characterization with respect to different external stiffness perturbations introduced by the capacitive transduction. Three paradigms of AR were implemented in this subject, namely, intermodal AR (IM-AR), interresonator AR (IR-AR), and interresonator-IM-AR (IRIM-AR), owing to the feature of simultaneous multiple-mode excitation of BSE. A comparison regarding the coupled resonant devices subject to the conventional drive scheme and the BSE was conducted, where the experimental results indicated that more than two orders of magnitude enhancement in sensitivity were achieved with the BSE scheme, along with the possibility of a pronounced ~17 times improvement in the noise floor, as well as the capability of simultaneous multiple parameter extraction across different resonators and vibration modes within the coupled system. This work further verified the feasibility and effectiveness of the BSE scheme, demonstrating the potential of such a technique for sensing applications based on mode-localized resonant sensors, fostering ultrahigh performance augmentation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1345-1351"},"PeriodicalIF":2.9,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143519853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study focuses on abnormal breakdown issues observed during the practical operation of D-mode GaN-based metal insulator semiconductor high electron mobility transistor (MIS-HEMT). The measurement statistics show that the breakdown voltage (${V}_{text {BD}}text {)}$ of the body-floating device reaches 1653 V; however, the body-grounded device experiences early breakdown at 1161 V. Through high-temperature reverse bias (HTRBs) degradation mechanisms, a discrepancy in the energy band of the channel layer due to body contact is identified. The experimental results indicate that the phenomenon corresponds to drain-induced barrier lowering (DIBL), causing the channel to turn on early. TCAD simulations indicate that the body-grounded state causes larger energy band bending and generates a higher electric field within the insulator compared to the body-floating state, which is called the body-grounded coupling effect. Furthermore, the gate and drain lag dynamic measurement confirms that the effect originates from the buffer, while the electric field beneath the gate does not immediately affect the quality of the dielectric layer. This mechanism of this study is proposed to describe the insulator breakdown behavior that occurs in the D-mode body-grounded MIS-HEMTs.
本研究的重点是在 D 模式氮化镓基金属绝缘体半导体高电子迁移率晶体管（MIS-HEMT）的实际运行过程中观察到的异常击穿问题。测量统计结果表明，体浮器件的击穿电压（${V}_{text {BD}}text {）}$达到了1653 V；然而，体接地器件在1161 V时出现了早期击穿。通过高温反向偏压（HTRBs）降解机制，确定了体接触导致的沟道层能带差异。实验结果表明，这种现象相当于漏极诱导势垒降低（DIBL），导致沟道提前导通。TCAD 模拟表明，与体浮动状态相比，体接地状态会导致更大的能带弯曲，并在绝缘体内产生更高的电场，这就是所谓的体接地耦合效应。此外，栅极和漏极滞后动态测量证实，该效应源自缓冲器，而栅极下方的电场不会立即影响介电层的质量。本研究提出的这一机制可用于描述 D 模式体接地 MIS-HEMT 中发生的绝缘体击穿行为。
{"title":"Analysis of Insulator Breakdown Induced by Body-Grounded-Coupling Effect in GaN-Based MIS-HEMT","authors":"Cheng-Hsien Lin;Chien-Hung Yeh;Po-Hsun Chen;Ting-Chang Chang;Ya-Huan Lee;Yu-Bo Wang;Ting-Tzu Kuo;Hung-Ming Kuo;Jui-Tse Hsu;Jia-Hong Lin;Bo-Yu Chen;Yu-Hsuan Kuo;Yu-Jie Tsai","doi":"10.1109/TED.2025.3532402","DOIUrl":"https://doi.org/10.1109/TED.2025.3532402","url":null,"abstract":"This study focuses on abnormal breakdown issues observed during the practical operation of D-mode GaN-based metal insulator semiconductor high electron mobility transistor (MIS-HEMT). The measurement statistics show that the breakdown voltage (<inline-formula> <tex-math>${V}_{text {BD}}text {)}$ </tex-math></inline-formula> of the body-floating device reaches 1653 V; however, the body-grounded device experiences early breakdown at 1161 V. Through high-temperature reverse bias (HTRBs) degradation mechanisms, a discrepancy in the energy band of the channel layer due to body contact is identified. The experimental results indicate that the phenomenon corresponds to drain-induced barrier lowering (DIBL), causing the channel to turn on early. TCAD simulations indicate that the body-grounded state causes larger energy band bending and generates a higher electric field within the insulator compared to the body-floating state, which is called the body-grounded coupling effect. Furthermore, the gate and drain lag dynamic measurement confirms that the effect originates from the buffer, while the electric field beneath the gate does not immediately affect the quality of the dielectric layer. This mechanism of this study is proposed to describe the insulator breakdown behavior that occurs in the D-mode body-grounded MIS-HEMTs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1014-1020"},"PeriodicalIF":2.9,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-28DOI: 10.1109/TED.2025.3532562
Haicheng Cao;Mingtao Nong;Tingang Liu;Glen I. García;Zhiyuan Liu;Xiao Tang;Mritunjay Kumar;Biplab Sarkar;Ying Wu;Xiaohang Li
In this letter, we present a high-performance aluminum nitride (AlN) lateral Schottky barrier diode (SBD) achieved through rapid thermal annealing (RTA) in an oxygen environment. This treatment dramatically reduces the reverse leakage current and significantly enhances the Schottky contact performance. These treated SBDs exhibit impressive room temperature (RT) characteristics, including a rectification ratio of $sim 10^{{7}}$ , an ideality factor of 2.04, a barrier height of 1.84 eV, and the highest breakdown voltages at the kilovolt level. Even under elevated temperatures, these devices maintain exceptional stability, showcasing their robust performance. This notable enhancement results from effective defect compensation, reducing defect-assisted tunneling paths. X-ray photoelectron spectroscopy (XPS) and capacitance-voltage analysis confirm the presence of an oxygen diffusion layer near the AlN surface posttreatment, further contributing to enhanced defect compensation. This work marks a significant milestone in advancing AlN SBDs, offering the potential for more efficient and reliable devices in high-power applications.
{"title":"Performance Enhancement of n-Type AlN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment","authors":"Haicheng Cao;Mingtao Nong;Tingang Liu;Glen I. García;Zhiyuan Liu;Xiao Tang;Mritunjay Kumar;Biplab Sarkar;Ying Wu;Xiaohang Li","doi":"10.1109/TED.2025.3532562","DOIUrl":"https://doi.org/10.1109/TED.2025.3532562","url":null,"abstract":"In this letter, we present a high-performance aluminum nitride (AlN) lateral Schottky barrier diode (SBD) achieved through rapid thermal annealing (RTA) in an oxygen environment. This treatment dramatically reduces the reverse leakage current and significantly enhances the Schottky contact performance. These treated SBDs exhibit impressive room temperature (RT) characteristics, including a rectification ratio of <inline-formula> <tex-math>$sim 10^{{7}}$ </tex-math></inline-formula>, an ideality factor of 2.04, a barrier height of 1.84 eV, and the highest breakdown voltages at the kilovolt level. Even under elevated temperatures, these devices maintain exceptional stability, showcasing their robust performance. This notable enhancement results from effective defect compensation, reducing defect-assisted tunneling paths. X-ray photoelectron spectroscopy (XPS) and capacitance-voltage analysis confirm the presence of an oxygen diffusion layer near the AlN surface posttreatment, further contributing to enhanced defect compensation. This work marks a significant milestone in advancing AlN SBDs, offering the potential for more efficient and reliable devices in high-power applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1533-1536"},"PeriodicalIF":2.9,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-28DOI: 10.1109/TED.2025.3529401
Santanab Majumder;Avik Sett;Dipak Kumar Goswami;Tarun Kanti Bhattacharyya
In this study, we demonstrated the fabrication of reduced graphene oxide reduced graphene oxide (RGO)–molybdenum disulfide (MoS2) nano-junction aggregates on flexible interdigitated electrodes (IDEs) as Hg (II) ion sensors for water quality monitoring. The as-fabricated devices showed selective sensitivity toward varying concentrations (from 3 to 12 ppb) of Hg (II) ions in solution, offering a maximum response of ~97% for 12 ppb Hg (II) ions (response time ~4 s) and a sensitivity of 2.2%/ppb (limit of detection: 1 ppb). Bending stress effects on the device were tested by subjecting it to increasing bending angles (15°–90°). They were minimally responsive (maximum variation ~2%) toward bending supported by a fitting model. The sensing performance for the device was explained via a junction-dependent mechanism with a model for supporting the same. Finally, the overall device response was determined analytically by examining the impact of the n, p, and junction regions. The analytical model’s prediction of 96% at 12 ppb was almost similar to the experimental measurement (97%). The analytical model predicted a significant response dependence on the contribution of the n-type (MoS2) and the RGO-MoS2 (pn) junction. The p-type region was less responsive toward the overall sensing performance, which may be attributed to lower hole mobility than that of electrons. The device was repeatable and stable for up to 40 days with ~7% variation in response. Hence, the proposed sensor provides a simple solution for selective Hg (II) ion sensing, challenging its complex conventional counterparts.
{"title":"RGO–MoS₂ Nano-Junction Aggregates Based Flexible Hg (II) Ion Sensors","authors":"Santanab Majumder;Avik Sett;Dipak Kumar Goswami;Tarun Kanti Bhattacharyya","doi":"10.1109/TED.2025.3529401","DOIUrl":"https://doi.org/10.1109/TED.2025.3529401","url":null,"abstract":"In this study, we demonstrated the fabrication of reduced graphene oxide reduced graphene oxide (RGO)–molybdenum disulfide (MoS2) nano-junction aggregates on flexible interdigitated electrodes (IDEs) as Hg (II) ion sensors for water quality monitoring. The as-fabricated devices showed selective sensitivity toward varying concentrations (from 3 to 12 ppb) of Hg (II) ions in solution, offering a maximum response of ~97% for 12 ppb Hg (II) ions (response time ~4 s) and a sensitivity of 2.2%/ppb (limit of detection: 1 ppb). Bending stress effects on the device were tested by subjecting it to increasing bending angles (15°–90°). They were minimally responsive (maximum variation ~2%) toward bending supported by a fitting model. The sensing performance for the device was explained via a junction-dependent mechanism with a model for supporting the same. Finally, the overall device response was determined analytically by examining the impact of the n, p, and junction regions. The analytical model’s prediction of 96% at 12 ppb was almost similar to the experimental measurement (97%). The analytical model predicted a significant response dependence on the contribution of the n-type (MoS2) and the RGO-MoS2 (pn) junction. The p-type region was less responsive toward the overall sensing performance, which may be attributed to lower hole mobility than that of electrons. The device was repeatable and stable for up to 40 days with ~7% variation in response. Hence, the proposed sensor provides a simple solution for selective Hg (II) ion sensing, challenging its complex conventional counterparts.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1469-1475"},"PeriodicalIF":2.9,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High-performance flexible pressure sensors are crucial for achieving precise tactile sensing and play an indispensable role in human motion detection and human-machine interaction. In this study, a new low-cost flexible capacitive pressure sensor (CPS) is designed using the bionic microstructure of a grasshopper leg with polydimethylsiloxane (PDMS) as the dielectric layer. Through finite element simulation and structural optimization, the CPS can achieve high sensitivity (0.925 kPa$^{-{1}}$ ), a wide pressure sensing range (5 Pa–388 kPa), fast response time (30 ms), excellent consistency across sensor batches, and outstanding stability. Additionally, the study demonstrates the CPS’s capabilities in intelligent robots manipulator operations, human hand grasping objects with tactile feedback, human motion posture detection, and information transfer of Morse code in practical applications. Given the outstanding performance of the CPS, it is poised to be a preferred choice for future wearable devices and human-machine interaction.
{"title":"High-Performance Flexible Pressure Sensor Based on Biomimetic Grasshopper Leg Structure for Wearable Devices and Human-Machine Interaction","authors":"Honglin Chen;Weiqiang Hong;Qiang Long;Xianghui Li;Ming Hou;Xiaowen Zhu;Zihan Lin;Xinyue Wang;Hao Hou;Yunong Zhao;Qi Hong;Wenrui Xu;Xiangchen Zhao;Xiaohui Guo","doi":"10.1109/TED.2025.3527948","DOIUrl":"https://doi.org/10.1109/TED.2025.3527948","url":null,"abstract":"High-performance flexible pressure sensors are crucial for achieving precise tactile sensing and play an indispensable role in human motion detection and human-machine interaction. In this study, a new low-cost flexible capacitive pressure sensor (CPS) is designed using the bionic microstructure of a grasshopper leg with polydimethylsiloxane (PDMS) as the dielectric layer. Through finite element simulation and structural optimization, the CPS can achieve high sensitivity (0.925 kPa<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>), a wide pressure sensing range (5 Pa–388 kPa), fast response time (30 ms), excellent consistency across sensor batches, and outstanding stability. Additionally, the study demonstrates the CPS’s capabilities in intelligent robots manipulator operations, human hand grasping objects with tactile feedback, human motion posture detection, and information transfer of Morse code in practical applications. Given the outstanding performance of the CPS, it is poised to be a preferred choice for future wearable devices and human-machine interaction.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1352-1359"},"PeriodicalIF":2.9,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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