Pub Date : 2024-08-23DOI: 10.1109/TED.2024.3444215
{"title":"IEEE ELECTRON DEVICES SOCIETY","authors":"","doi":"10.1109/TED.2024.3444215","DOIUrl":"https://doi.org/10.1109/TED.2024.3444215","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10645719","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142050476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TED.2024.3444221
{"title":"Blank Page","authors":"","doi":"10.1109/TED.2024.3444221","DOIUrl":"https://doi.org/10.1109/TED.2024.3444221","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10645718","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142050479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TED.2024.3444219
{"title":"IEEE Transactions on Electron Devices Information for Authors","authors":"","doi":"10.1109/TED.2024.3444219","DOIUrl":"https://doi.org/10.1109/TED.2024.3444219","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10645701","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142050457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TED.2024.3428843
{"title":"Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices","authors":"","doi":"10.1109/TED.2024.3428843","DOIUrl":"https://doi.org/10.1109/TED.2024.3428843","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10645700","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142045203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TED.2024.3446209
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TED.2024.3446209","DOIUrl":"https://doi.org/10.1109/TED.2024.3446209","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10645720","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142050467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/ted.2024.3442188
Sirsendu Ghosh, Ramesh Singh Bisht, Pramod Kumar
{"title":"Simulation Study on Comparison of “Inside-Channel” and “On-Dielectric” Source Contact Modifications on the Performance of the Vertical Organic Field Effect Transistors","authors":"Sirsendu Ghosh, Ramesh Singh Bisht, Pramod Kumar","doi":"10.1109/ted.2024.3442188","DOIUrl":"https://doi.org/10.1109/ted.2024.3442188","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TED.2024.3444217
{"title":"Bridging the Data Gap in Photovoltaics with Synthetic Data Generation","authors":"","doi":"10.1109/TED.2024.3444217","DOIUrl":"https://doi.org/10.1109/TED.2024.3444217","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10645699","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142045260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effect of H2 plasma improved KrF photoresist (PR) profile after exposure without bottom anti-reflection coating (BARC) on planar PMOSFET performance in static random access memory (SRAM) is investigated. The proposed H2 plasma treatment is revealed to be able to obtain a well-controlled KrF PR profile with a more PR-safer process. It is demonstrated that such a KrF PR profile can effectively prevent the ions of NMOSFET pocket ion implantation from entering the substrate of PMOSFET. Hence, ~17% reduction of threshold voltage local variation for PMOSFETs in SRAM and ~8 mV improvement of static noise margin (SNM) for SRAM cell can be obtained without performance degradation for both NMOSFETs and PMOSFETs.
{"title":"Suppression of Threshold Voltage Variation by H₂ Plasma Improved KrF Photoresist Profile","authors":"Cheng-Hao Liang;Ran Bi;Hao Liu;Song He;Hang Li;Yu-Long Jiang","doi":"10.1109/TED.2024.3433311","DOIUrl":"https://doi.org/10.1109/TED.2024.3433311","url":null,"abstract":"The effect of H2 plasma improved KrF photoresist (PR) profile after exposure without bottom anti-reflection coating (BARC) on planar PMOSFET performance in static random access memory (SRAM) is investigated. The proposed H2 plasma treatment is revealed to be able to obtain a well-controlled KrF PR profile with a more PR-safer process. It is demonstrated that such a KrF PR profile can effectively prevent the ions of NMOSFET pocket ion implantation from entering the substrate of PMOSFET. Hence, ~17% reduction of threshold voltage local variation for PMOSFETs in SRAM and ~8 mV improvement of static noise margin (SNM) for SRAM cell can be obtained without performance degradation for both NMOSFETs and PMOSFETs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142050459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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