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The Optical-Electronic Integrated Spiking Neurons Based on Antiferroelectric Thin-Film Transistors 基于反铁电薄膜晶体管的光电集成尖峰神经元
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-09 DOI: 10.1109/ted.2024.3450440
Xiaopeng Luo, Peng Yang, Shihao Yu, Xu Guo, Yefan Zhang, Yang Liu, Yi Sun, Yinan Wang, Sen Liu, Qingjiang Li
{"title":"The Optical-Electronic Integrated Spiking Neurons Based on Antiferroelectric Thin-Film Transistors","authors":"Xiaopeng Luo, Peng Yang, Shihao Yu, Xu Guo, Yefan Zhang, Yang Liu, Yi Sun, Yinan Wang, Sen Liu, Qingjiang Li","doi":"10.1109/ted.2024.3450440","DOIUrl":"https://doi.org/10.1109/ted.2024.3450440","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunnel Junction-Enabled AlGaN/GaN Heterojunction Bipolar Transistors With All n-Type Contacts 采用隧道结的全 n 型触点 AlGaN/GaN 异质结双极晶体管
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-05 DOI: 10.1109/ted.2024.3451459
Chandan Joishi, Sheikh Ifatur Rahman, Siddharth Rajan
{"title":"Tunnel Junction-Enabled AlGaN/GaN Heterojunction Bipolar Transistors With All n-Type Contacts","authors":"Chandan Joishi, Sheikh Ifatur Rahman, Siddharth Rajan","doi":"10.1109/ted.2024.3451459","DOIUrl":"https://doi.org/10.1109/ted.2024.3451459","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology 采用 4H-SiC CMOS 技术的恶劣环境温度传感元件
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-04 DOI: 10.1109/ted.2024.3450828
Jiarui Mo, Jinglin Li, Alexander May, Mathias Rommel, Sten Vollebregt, Guoqi Zhang
{"title":"Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology","authors":"Jiarui Mo, Jinglin Li, Alexander May, Mathias Rommel, Sten Vollebregt, Guoqi Zhang","doi":"10.1109/ted.2024.3450828","DOIUrl":"https://doi.org/10.1109/ted.2024.3450828","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging 通过显微镜高光谱成像建立具有热耦合矩阵的多芯片发光二极管器件的二维光热模型
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-04 DOI: 10.1109/ted.2024.3450441
Guanhong Liu, Huanting Chen, Yin Zheng, Huichuan Lin, Shuo Lin, Yuxin Wu, Xuehua Shen
{"title":"Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging","authors":"Guanhong Liu, Huanting Chen, Yin Zheng, Huichuan Lin, Shuo Lin, Yuxin Wu, Xuehua Shen","doi":"10.1109/ted.2024.3450441","DOIUrl":"https://doi.org/10.1109/ted.2024.3450441","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors 高迁移率 p 型碲场效应晶体管的电流波动机制
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-04 DOI: 10.1109/ted.2024.3440962
Peng Yang, Yudong Pang, Jiajia Zha, Haoxin Huang, Zhendong Jiang, Meng Zhang, Chaoliang Tan, Wugang Liao
{"title":"Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors","authors":"Peng Yang, Yudong Pang, Jiajia Zha, Haoxin Huang, Zhendong Jiang, Meng Zhang, Chaoliang Tan, Wugang Liao","doi":"10.1109/ted.2024.3440962","DOIUrl":"https://doi.org/10.1109/ted.2024.3440962","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxygen Vacancy-Induced Synaptic Plasticity in InAlZnO Nanofiber Transistors for Low-Power Neuromorphic Electronics 用于低功耗神经形态电子器件的 InAlZnO 纳米纤维晶体管中氧空位诱导的突触可塑性
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-04 DOI: 10.1109/ted.2024.3449828
Wenlan Xiao, Yao Dong, Ranran Ci, Guoxia Liu, Fukai Shan
{"title":"Oxygen Vacancy-Induced Synaptic Plasticity in InAlZnO Nanofiber Transistors for Low-Power Neuromorphic Electronics","authors":"Wenlan Xiao, Yao Dong, Ranran Ci, Guoxia Liu, Fukai Shan","doi":"10.1109/ted.2024.3449828","DOIUrl":"https://doi.org/10.1109/ted.2024.3449828","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heterogeneous Integration of 42$^{circ}$YX LiNbO$_{text{3}}$/SiO$_{text{2}}$/Quartz for Wideband and Spurious-Free SAW Resonators 用于宽带无杂散声表面波谐振器的 42$^{circ}$YX LiNbO$_{text{3}}$/SiO$_{text{2}}$/Quartz 异质集成技术
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-03 DOI: 10.1109/ted.2024.3450438
Xinjian Ke, Jinbo Wu, Yang Chen, Shibin Zhang, Xiaomeng Zhao, Pengcheng Zheng, Min Zhou, Kai Huang, Xin Ou
{"title":"Heterogeneous Integration of 42$^{circ}$YX LiNbO$_{text{3}}$/SiO$_{text{2}}$/Quartz for Wideband and Spurious-Free SAW Resonators","authors":"Xinjian Ke, Jinbo Wu, Yang Chen, Shibin Zhang, Xiaomeng Zhao, Pengcheng Zheng, Min Zhou, Kai Huang, Xin Ou","doi":"10.1109/ted.2024.3450438","DOIUrl":"https://doi.org/10.1109/ted.2024.3450438","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Noise Improvement and High Dynamic Range in a CMOS Image Sensor With Shift Biasing Structure 采用移位偏置结构的 CMOS 图像传感器的噪声改善和高动态范围
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-03 DOI: 10.1109/ted.2024.3450650
Yang Qu, Hongwei Liang, Shanshan Lou, Guoqiang Zhong, Yu Cheng, Qian Jiang, Yuchun Chang
{"title":"Noise Improvement and High Dynamic Range in a CMOS Image Sensor With Shift Biasing Structure","authors":"Yang Qu, Hongwei Liang, Shanshan Lou, Guoqiang Zhong, Yu Cheng, Qian Jiang, Yuchun Chang","doi":"10.1109/ted.2024.3450650","DOIUrl":"https://doi.org/10.1109/ted.2024.3450650","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Response-Enhanced GeSn Photodetectors Realized by Photon Trapping Holes Array 通过光子捕获孔阵列实现响应增强型 GeSn 光电探测器
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-03 DOI: 10.1109/ted.2024.3450434
Guoyin Xu, Hui Cong, Rui Pan, Xiaoyu Wang, Lin Shen, Yue Li, Yixin Wang, Hong Lu, Chi Xu, Chunlai Xue
{"title":"Response-Enhanced GeSn Photodetectors Realized by Photon Trapping Holes Array","authors":"Guoyin Xu, Hui Cong, Rui Pan, Xiaoyu Wang, Lin Shen, Yue Li, Yixin Wang, Hong Lu, Chi Xu, Chunlai Xue","doi":"10.1109/ted.2024.3450434","DOIUrl":"https://doi.org/10.1109/ted.2024.3450434","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology 采用双 SOI 技术制造的低漏电 ESD 器件的总电离剂量效应和辐射硬度分析
IF 3.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices
Pub Date : 2024-09-03 DOI: 10.1109/ted.2024.3449249
Cheng Zhang, Fanyu Liu, Xiaojing Li, Siyuan Chen, Lei Shu, Lili Ding, Qiwen Zheng, Yong Xu, Xiao Yu, Jing Wan, Zhengsheng Han, Bo Li, Tianchun Ye
{"title":"Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology","authors":"Cheng Zhang, Fanyu Liu, Xiaojing Li, Siyuan Chen, Lei Shu, Lili Ding, Qiwen Zheng, Yong Xu, Xiao Yu, Jing Wan, Zhengsheng Han, Bo Li, Tianchun Ye","doi":"10.1109/ted.2024.3449249","DOIUrl":"https://doi.org/10.1109/ted.2024.3449249","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142212190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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