Pub Date : 2024-12-05DOI: 10.1109/JSTQE.2024.3499581
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics","authors":"","doi":"10.1109/JSTQE.2024.3499581","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499581","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"C4-C4"},"PeriodicalIF":4.3,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779972","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-04DOI: 10.1109/JSTQE.2024.3511716
Md. Shamim Reza;Tuhin Dey;Augustus W. Arbogast;Qian Meng;Seth R. Bank;Mark A. Wistey
Models of GeSn and GeCSn quantum well (QW) lasers were compared to predict net gain and threshold for computing applications. GeSn showed weak confinement of electrons in both k-space (directness) and real space, as well as a weak optical confinement factor. Using material parameters from ab-initio calculations, adding 1-2% carbon to Ge or GeSn could provide all three confinements simultaneously, with up to 350 meV of electron confinement by Ge QW barriers and a direct bandgap that is 50-220 meV below the indirect gap. A 2-4x increase in electron effective mass preserves strong confinement even in narrow, 5 nm GeCSn/Ge quantum wells. Simply keeping electrons out of non-lasing, higher energy states doubles the differential gain compared with GeSn lasers and reduces free carrier absorption, while deeper QWs further enhance gain. GeCSn laser thresholds as low as 160 A/cm 2 are predicted for operation at temperatures of 100 °C, two orders of magnitude lower than comparable GeSn lasers.
{"title":"Confinement and Threshold Modeling for High Temperature GeSn and GeC/GeCSn Lasers","authors":"Md. Shamim Reza;Tuhin Dey;Augustus W. Arbogast;Qian Meng;Seth R. Bank;Mark A. Wistey","doi":"10.1109/JSTQE.2024.3511716","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3511716","url":null,"abstract":"Models of GeSn and GeCSn quantum well (QW) lasers were compared to predict net gain and threshold for computing applications. GeSn showed weak confinement of electrons in both k-space (directness) and real space, as well as a weak optical confinement factor. Using material parameters from ab-initio calculations, adding 1-2% carbon to Ge or GeSn could provide all three confinements simultaneously, with up to 350 meV of electron confinement by Ge QW barriers and a direct bandgap that is 50-220 meV below the indirect gap. A 2-4x increase in electron effective mass preserves strong confinement even in narrow, 5 nm GeCSn/Ge quantum wells. Simply keeping electrons out of non-lasing, higher energy states doubles the differential gain compared with GeSn lasers and reduces free carrier absorption, while deeper QWs further enhance gain. GeCSn laser thresholds as low as 160 A/cm\u0000<sup>2</sup>\u0000 are predicted for operation at temperatures of 100 °C, two orders of magnitude lower than comparable GeSn lasers.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-03DOI: 10.1109/JSTQE.2024.3500232
Patrick Uebel
{"title":"Editorial Interview: Recent Industrial Applications and Outlook of Hollow-Core Optical Fibers","authors":"Patrick Uebel","doi":"10.1109/JSTQE.2024.3500232","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3500232","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-3"},"PeriodicalIF":4.3,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10774075","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-25DOI: 10.1109/JSTQE.2024.3494952
Michael H. Frosz;Thomas D. Bradley;Md. Selim Habib;Christos Markos;John Travers;Yingying Wang
{"title":"Editorial: Advances and Applications of Hollow-Core Fibers","authors":"Michael H. Frosz;Thomas D. Bradley;Md. Selim Habib;Christos Markos;John Travers;Yingying Wang","doi":"10.1109/JSTQE.2024.3494952","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3494952","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-1"},"PeriodicalIF":4.3,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10767107","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on microlasers based on high-quality micropillars with whispering-gallery modes lasing. The use of low-absorbing Al 0.2 Ga 0.8 As/Al 0.9 Ga 0.1 As distributed Bragg reflectors and smooth pillar sidewalls enables whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. Simultaneous whispering gallery modes lasing (comb-like structure) is observed in the wavelength range of 930–970 nm for 3–7 μm pillar diameters. Increasing the temperature to 130 K leads to single-mode lasing for 5 μm pillars with a cold cavity quality-factor of about 8000 and an estimated threshold excitation power of 240 μW. Lasing in the thermoelectrical cooling range (up to 170 K) has been demonstrated.
{"title":"Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers","authors":"Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Sergey Troshkov;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil'ev;Sergey Blokhin;Nikolay Maleev;Leonid Karachinsky;Innokenty Novikov;Anton Egorov","doi":"10.1109/JSTQE.2024.3503724","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3503724","url":null,"abstract":"We report on microlasers based on high-quality micropillars with whispering-gallery modes lasing. The use of low-absorbing Al\u0000<sub>0.2</sub>\u0000Ga\u0000<sub>0.8</sub>\u0000As/Al\u0000<sub>0.9</sub>\u0000Ga\u0000<sub>0.1</sub>\u0000As distributed Bragg reflectors and smooth pillar sidewalls enables whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. Simultaneous whispering gallery modes lasing (comb-like structure) is observed in the wavelength range of 930–970 nm for 3–7 μm pillar diameters. Increasing the temperature to 130 K leads to single-mode lasing for 5 μm pillars with a cold cavity quality-factor of about 8000 and an estimated threshold excitation power of 240 μW. Lasing in the thermoelectrical cooling range (up to 170 K) has been demonstrated.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142821240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-20DOI: 10.1109/JSTQE.2024.3502794
Matthew N Robinson;Stephen John Sweeney;Richard A Hogg
This paper presents a coupled-wave analysis of triangular-lattice photonic crystal surface emitting lasers (PCSELs) with transverse magnetic polarization. Six plane waves coupled by Bragg diffraction describe the two-dimensional optical coupling. Resonant mode frequencies are calculated for a lattice of circular holes at various fill factors and compared to the plane-wave expansion method. Analytical equations for coupling constants and mode frequencies are derived, and mode degeneracy as a function of fill factor is examined. Comparison to a square lattice TM mode PCSEL shows improved in-plane 2D coupling. The general equations for arbitrary unit cell dielectric functions are discussed, with predictions of the lasing mode supported by finite device calculations.
{"title":"Two-Dimensional Coupled Wave Theory for Triangular Lattice TM-Polarised Photonic Crystal Surface Emitting Lasers","authors":"Matthew N Robinson;Stephen John Sweeney;Richard A Hogg","doi":"10.1109/JSTQE.2024.3502794","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3502794","url":null,"abstract":"This paper presents a coupled-wave analysis of triangular-lattice photonic crystal surface emitting lasers (PCSELs) with transverse magnetic polarization. Six plane waves coupled by Bragg diffraction describe the two-dimensional optical coupling. Resonant mode frequencies are calculated for a lattice of circular holes at various fill factors and compared to the plane-wave expansion method. Analytical equations for coupling constants and mode frequencies are derived, and mode degeneracy as a function of fill factor is examined. Comparison to a square lattice TM mode PCSEL shows improved in-plane 2D coupling. The general equations for arbitrary unit cell dielectric functions are discussed, with predictions of the lasing mode supported by finite device calculations.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-19DOI: 10.1109/JSTQE.2024.3499859
Priyanka Petluru;Christopher R. Allemang;Shang Liu;Jifeng Liu;Tzu-Ming Lu
Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm 2 /Vs and 2.05 cm 2 /Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. This work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.
{"title":"Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications","authors":"Priyanka Petluru;Christopher R. Allemang;Shang Liu;Jifeng Liu;Tzu-Ming Lu","doi":"10.1109/JSTQE.2024.3499859","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499859","url":null,"abstract":"Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm\u0000<sup>2</sup>\u0000/Vs and 2.05 cm\u0000<sup>2</sup>\u0000/Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. This work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-08DOI: 10.1109/JSTQE.2024.3493913
Mingming Li;Jun Zheng;Zhigang Song;Wanhua Zheng
Silicon Nitride (SiN) platform, as an integrated photonics platform compatible with CMOS technology, is increasingly competitive. However, active devices on SiN platform, such as 2 $,mathrm{mu m}$ wavelength band photodetector(PD), remain relatively scarce. In this work, 2 $,mathrm{mu m}$ wavelength band SiN waveguide GeSn PDs based on the SiN process platform were designed, including passive SiN waveguides, tapers, and GeSn PDs. The incident light's optical field propagating in the SiN waveguide couples downward into the GeSn absorption layer in the form of an evanescent wave, achieving efficient light transmission and absorption. The Maxwell's equations are solved using the finite difference method to obtain the field distribution of the electromagnetic components on the cross-section of the waveguide, determining the dimensions of the SiN waveguide and taper for single-mode transmission. Additionally, a taper structure gradually narrowing from the input end to the output end is employed to connect the waveguide above the active layer. This structure achieves a bandwidth of 75 GHz and a responsivity of 1 A/W at 2 $,mathrm{mu m}$ for the Ge ${_{0.86}}$ Sn ${_{0.14}}$ PD by simulation. The design of waveguide integrated GeSn PD on SiN platform provides meaningful guidance for the preparation of 2 $,mathrm{mu m}$ wavelength band photonic integrated circuits (PIC).
氮化硅（SiN）平台作为与 CMOS 技术兼容的集成光子学平台，其竞争力与日俱增。然而，氮化硅平台上的有源器件，如2波长带光电探测器（PD），仍然相对稀缺。在这项工作中，设计了基于 SiN 工艺平台的 2$mathrm{mu m}$ 波长带 SiN 波导 GeSn 光电探测器，包括无源 SiN 波导、锥形器和 GeSn 光电探测器。入射光的光场在 SiN 波导中传播，以蒸发波的形式向下耦合到 GeSn 吸收层，实现了高效的光传输和吸收。利用有限差分法求解麦克斯韦方程，可获得波导横截面上电磁分量的场分布，从而确定 SiN 波导和锥形结构的尺寸，以实现单模传输。此外，还采用了从输入端到输出端逐渐变窄的锥形结构来连接有源层上方的波导。通过仿真，该结构在 2$,mathrm{mu m}$ 时，Ge${_{0.86}}$Sn${_{0.14}}$ PD 的带宽达到 75 GHz，响应率达到 1 A/W 。在 SiN 平台上设计波导集成 GeSn PD 为制备 2$,mathrm{mu m}$ 波长带光子集成电路（PIC）提供了有意义的指导。
{"title":"Design of the Waveguide Integrated GeSn PDs on a SiN Platform in $2,mathrm{mu m}$ Wavelength Band","authors":"Mingming Li;Jun Zheng;Zhigang Song;Wanhua Zheng","doi":"10.1109/JSTQE.2024.3493913","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3493913","url":null,"abstract":"Silicon Nitride (SiN) platform, as an integrated photonics platform compatible with CMOS technology, is increasingly competitive. However, active devices on SiN platform, such as 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band photodetector(PD), remain relatively scarce. In this work, 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band SiN waveguide GeSn PDs based on the SiN process platform were designed, including passive SiN waveguides, tapers, and GeSn PDs. The incident light's optical field propagating in the SiN waveguide couples downward into the GeSn absorption layer in the form of an evanescent wave, achieving efficient light transmission and absorption. The Maxwell's equations are solved using the finite difference method to obtain the field distribution of the electromagnetic components on the cross-section of the waveguide, determining the dimensions of the SiN waveguide and taper for single-mode transmission. Additionally, a taper structure gradually narrowing from the input end to the output end is employed to connect the waveguide above the active layer. This structure achieves a bandwidth of 75 GHz and a responsivity of 1 A/W at 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 for the Ge\u0000<inline-formula><tex-math>${_{0.86}}$</tex-math></inline-formula>\u0000Sn\u0000<inline-formula><tex-math>${_{0.14}}$</tex-math></inline-formula>\u0000 PD by simulation. The design of waveguide integrated GeSn PD on SiN platform provides meaningful guidance for the preparation of 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band photonic integrated circuits (PIC).","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (∼65000 for 5 μm pillar) due to better vertical mode confinement. The minimum laser threshold (∼370 μW for 5 μm pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.
该研究介绍了用于光泵浦微柱激光器的微腔参数的综合数值建模。由于具有更好的垂直模式约束，带有混合介质-半导体顶镜的结构的计算品质因数明显更高（5 μm 柱为 65000）。最小激光阈值（5 μm 激光柱为 370 μW）与 130 K 的温度相吻合，这与腔体失谐的增益接近于零。激光阈值约为 2.2 mW 时，可在高达 220 K 的温度下产生激光。
{"title":"Lasing of Quantum-Dot Micropillar Lasers Under Elevated Temperatures","authors":"Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Alexey Blokhin;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil'ev;Sergey Blokhin;Nikolay Maleev;Maria Tchernycheva;Leonid Karachinsky;Innokenty Novikov;Anton Egorov","doi":"10.1109/JSTQE.2024.3494245","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3494245","url":null,"abstract":"A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (∼65000 for 5 μm pillar) due to better vertical mode confinement. The minimum laser threshold (∼370 μW for 5 μm pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-08DOI: 10.1109/JSTQE.2024.3494541
Dhruve A. Ringwala;Matthew A. Mircovich;Manuel A. Roldan;John Kouvetakis;José Menéndez
This paper describes the properties of pin Ge 1-y Sn y diodes ( y = 4.4-10% Sn) grown directly on Si(100) wafers as a way to investigate the impact of eliminating the Ge buffer layers used conventionally for the integration of GeSn devices on Si. The technology offers a simplified and potentially lower-cost alternative for SWIR-LWIR applications. Two device designs are discussed. The first design adopts a layer sequence n -Ge 1-y Sn y / i -Ge 1-y Sn y / p -Ge 1-y Sn y /Si, featuring a single defected bottom interface between the p layer and the Si wafer. This was followed by an even simpler n -Ge 1-y Sn y / i -Ge 1-y Sn y / p -Si heterostructure design. In both cases, the top i / n interface is pseudomorphic and potentially defect-free. The Ge 1-y Sn y layers are produced by CVD reactions of Ge 3 H 8 and SnH 4 at temperatures ranging from 290 °C to 300 °C. The n -type electrodes in the samples were doped with As using As(SiH 3 ) 3 , and the p -type GeSn layers were doped using diborane as the source of B-atoms. All samples were characterized by XRD, RBS, IR-ellipsometry, AFM and TEM. The layers were found to be monocrystalline single-phase alloys exhibiting mostly relaxed strain states and top surfaces devoid of the cross-hatch surface patterns that are typical of Ge 1-y Sn y films grown on Ge buffers. Current-voltage I-V curves of fabricated devices over the 4.4-10% Sn range of interest showed that rectifying behavior is readily attained. It appears that the effect of eliminating the Ge-buffer is an increase of only one order magnitude in the density of defects responsible for the dark current, together with an increase in residual doping in the nominally intrinsic layer. The results suggest that these deleterious effects may be further reduced with improved sample designs, particularly at high Sn-concentrations, opening up new alternatives for the effective integration of GeSn- and Si technologies.
本文介绍了直接在 Si(100) 晶圆上生长的管脚 Ge1-ySny 二极管（y = 4.4-10% Sn）的特性，以此研究在 Si 上集成 GeSn 器件时取消常规使用的 Ge 缓冲层的影响。该技术为 SWIR-LWIR 应用提供了一种简化的、潜在的低成本替代方案。本文讨论了两种器件设计。第一种设计采用 n-Ge1-ySny/i-Ge1-ySny/p-Ge1-ySny/Si 层序，其特点是 p 层和硅晶片之间只有一个底部缺陷界面。随后是一种更简单的 n-Ge1-ySny/i-Ge1-ySny /p-Si 异质结构设计。在这两种情况下，顶部的 i/n 界面都是拟态的，可能没有缺陷。Ge1-ySny 层是由 Ge3H8 和 SnH4 在 290 °C 至 300 °C 的温度下通过 CVD 反应生成的。样品中的 n 型电极使用 As(SiH3)3 掺杂 As，p 型 GeSn 层使用二硼烷作为 B 原子源进行掺杂。所有样品都通过 XRD、RBS、红外椭偏仪、原子力显微镜和 TEM 进行了表征。研究发现，这些层是单晶单相合金，主要呈现松弛应变状态，顶面没有在 Ge 缓冲层上生长的 Ge1-ySny 薄膜所特有的交叉划痕表面图案。所制造器件在 4.4-10% Sn 范围内的电流-电压 I-V 曲线显示，很容易实现整流行为。消除 Ge 缓冲层的效果似乎只是使产生暗电流的缺陷密度增加一个数量级，同时增加了名义上的本征层中的残余掺杂。研究结果表明，通过改进样品设计，特别是在锡浓度较高的情况下，可以进一步减少这些有害影响，为有效集成 GeSn- 和 Si 技术开辟了新的途径。
{"title":"Simplified Designs of Ge1-ySny/Si(100) Diodes for Facile Integration With Si Technologies: Synthesis, Electrical Performance and Modeling Studies","authors":"Dhruve A. Ringwala;Matthew A. Mircovich;Manuel A. Roldan;John Kouvetakis;José Menéndez","doi":"10.1109/JSTQE.2024.3494541","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3494541","url":null,"abstract":"This paper describes the properties of \u0000<italic>pin</i>\u0000 Ge\u0000<sub>1-</sub>\u0000<italic><sub>y</sub></i>\u0000Sn\u0000<italic><sub>y</sub></i>\u0000 diodes (\u0000<italic>y</i>\u0000 = 4.4-10% Sn) grown directly on Si(100) wafers as a way to investigate the impact of eliminating the Ge buffer layers used conventionally for the integration of GeSn devices on Si. The technology offers a simplified and potentially lower-cost alternative for SWIR-LWIR applications. Two device designs are discussed. The first design adopts a layer sequence \u0000<italic>n</i>\u0000-Ge\u0000<sub>1-</sub>\u0000<italic><sub>y</sub></i>\u0000Sn\u0000<italic><sub>y</sub></i>\u0000/\u0000<italic>i</i>\u0000-Ge\u0000<sub>1-</sub>\u0000<italic><sub>y</sub></i>\u0000Sn\u0000<italic><sub>y</sub></i>\u0000/\u0000<italic>p</i>\u0000-Ge\u0000<sub>1-</sub>\u0000<italic><sub>y</sub></i>\u0000Sn\u0000<italic><sub>y</sub></i>\u0000/Si, featuring a single defected bottom interface between the \u0000<italic>p</i>\u0000 layer and the Si wafer. This was followed by an even simpler \u0000<italic>n</i>\u0000-Ge\u0000<sub>1-</sub>\u0000<italic><sub>y</sub></i>\u0000Sn\u0000<italic><sub>y</sub></i>\u0000/\u0000<italic>i</i>\u0000-Ge\u0000<sub>1-</sub>\u0000<italic><sub>y</sub></i>\u0000Sn\u0000<italic><sub>y</sub></i>\u0000 /\u0000<italic>p</i>\u0000-Si heterostructure design. In both cases, the top \u0000<italic>i</i>\u0000/\u0000<italic>n</i>\u0000 interface is pseudomorphic and potentially defect-free. The Ge\u0000<sub>1-y</sub>\u0000Sn\u0000<sub>y</sub>\u0000 layers are produced by CVD reactions of Ge\u0000<sub>3</sub>\u0000H\u0000<sub>8</sub>\u0000 and SnH\u0000<sub>4</sub>\u0000 at temperatures ranging from 290 °C to 300 °C. The \u0000<italic>n</i>\u0000-type electrodes in the samples were doped with As using As(SiH\u0000<sub>3</sub>\u0000)\u0000<sub>3</sub>\u0000, and the \u0000<italic>p</i>\u0000-type GeSn layers were doped using diborane as the source of B-atoms. All samples were characterized by XRD, RBS, IR-ellipsometry, AFM and TEM. The layers were found to be monocrystalline single-phase alloys exhibiting mostly relaxed strain states and top surfaces devoid of the cross-hatch surface patterns that are typical of Ge\u0000<sub>1-</sub>\u0000<italic><sub>y</sub></i>\u0000Sn\u0000<italic><sub>y</sub></i>\u0000 films grown on Ge buffers. Current-voltage \u0000<italic>I-V</i>\u0000 curves of fabricated devices over the 4.4-10% Sn range of interest showed that rectifying behavior is readily attained. It appears that the effect of eliminating the Ge-buffer is an increase of only one order magnitude in the density of defects responsible for the dark current, together with an increase in residual doping in the nominally intrinsic layer. The results suggest that these deleterious effects may be further reduced with improved sample designs, particularly at high Sn-concentrations, opening up new alternatives for the effective integration of GeSn- and Si technologies.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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