Pub Date : 2024-12-05DOI: 10.1109/JSTQE.2024.3499575
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Publication Information","authors":"","doi":"10.1109/JSTQE.2024.3499575","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499575","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"C2-C2"},"PeriodicalIF":4.3,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779591","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/JSTQE.2024.3499579
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JSTQE.2024.3499579","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499579","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"C3-C3"},"PeriodicalIF":4.3,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779584","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/JSTQE.2024.3499581
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics","authors":"","doi":"10.1109/JSTQE.2024.3499581","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499581","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"C4-C4"},"PeriodicalIF":4.3,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779972","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-04DOI: 10.1109/JSTQE.2024.3511716
Md. Shamim Reza;Tuhin Dey;Augustus W. Arbogast;Qian Meng;Seth R. Bank;Mark A. Wistey
Models of GeSn and GeCSn quantum well (QW) lasers were compared to predict net gain and threshold for computing applications. GeSn showed weak confinement of electrons in both k-space (directness) and real space, as well as a weak optical confinement factor. Using material parameters from ab-initio calculations, adding 1-2% carbon to Ge or GeSn could provide all three confinements simultaneously, with up to 350 meV of electron confinement by Ge QW barriers and a direct bandgap that is 50-220 meV below the indirect gap. A 2-4x increase in electron effective mass preserves strong confinement even in narrow, 5 nm GeCSn/Ge quantum wells. Simply keeping electrons out of non-lasing, higher energy states doubles the differential gain compared with GeSn lasers and reduces free carrier absorption, while deeper QWs further enhance gain. GeCSn laser thresholds as low as 160 A/cm2 are predicted for operation at temperatures of 100 °C, two orders of magnitude lower than comparable GeSn lasers.
{"title":"Confinement and Threshold Modeling for High Temperature GeSn and GeC/GeCSn Lasers","authors":"Md. Shamim Reza;Tuhin Dey;Augustus W. Arbogast;Qian Meng;Seth R. Bank;Mark A. Wistey","doi":"10.1109/JSTQE.2024.3511716","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3511716","url":null,"abstract":"Models of GeSn and GeCSn quantum well (QW) lasers were compared to predict net gain and threshold for computing applications. GeSn showed weak confinement of electrons in both k-space (directness) and real space, as well as a weak optical confinement factor. Using material parameters from ab-initio calculations, adding 1-2% carbon to Ge or GeSn could provide all three confinements simultaneously, with up to 350 meV of electron confinement by Ge QW barriers and a direct bandgap that is 50-220 meV below the indirect gap. A 2-4x increase in electron effective mass preserves strong confinement even in narrow, 5 nm GeCSn/Ge quantum wells. Simply keeping electrons out of non-lasing, higher energy states doubles the differential gain compared with GeSn lasers and reduces free carrier absorption, while deeper QWs further enhance gain. GeCSn laser thresholds as low as 160 A/cm\u0000<sup>2</sup>\u0000 are predicted for operation at temperatures of 100 °C, two orders of magnitude lower than comparable GeSn lasers.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-03DOI: 10.1109/JSTQE.2024.3500232
Patrick Uebel
{"title":"Editorial Interview: Recent Industrial Applications and Outlook of Hollow-Core Optical Fibers","authors":"Patrick Uebel","doi":"10.1109/JSTQE.2024.3500232","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3500232","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-3"},"PeriodicalIF":4.3,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10774075","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-25DOI: 10.1109/JSTQE.2024.3494952
Michael H. Frosz;Thomas D. Bradley;Md. Selim Habib;Christos Markos;John Travers;Yingying Wang
{"title":"Editorial: Advances and Applications of Hollow-Core Fibers","authors":"Michael H. Frosz;Thomas D. Bradley;Md. Selim Habib;Christos Markos;John Travers;Yingying Wang","doi":"10.1109/JSTQE.2024.3494952","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3494952","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-1"},"PeriodicalIF":4.3,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10767107","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on microlasers based on high-quality micropillars with whispering-gallery modes lasing. The use of low-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and smooth pillar sidewalls enables whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. Simultaneous whispering gallery modes lasing (comb-like structure) is observed in the wavelength range of 930–970 nm for 3–7 μm pillar diameters. Increasing the temperature to 130 K leads to single-mode lasing for 5 μm pillars with a cold cavity quality-factor of about 8000 and an estimated threshold excitation power of 240 μW. Lasing in the thermoelectrical cooling range (up to 170 K) has been demonstrated.
{"title":"Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers","authors":"Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Sergey Troshkov;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil'ev;Sergey Blokhin;Nikolay Maleev;Leonid Karachinsky;Innokenty Novikov;Anton Egorov","doi":"10.1109/JSTQE.2024.3503724","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3503724","url":null,"abstract":"We report on microlasers based on high-quality micropillars with whispering-gallery modes lasing. The use of low-absorbing Al\u0000<sub>0.2</sub>\u0000Ga\u0000<sub>0.8</sub>\u0000As/Al\u0000<sub>0.9</sub>\u0000Ga\u0000<sub>0.1</sub>\u0000As distributed Bragg reflectors and smooth pillar sidewalls enables whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. Simultaneous whispering gallery modes lasing (comb-like structure) is observed in the wavelength range of 930–970 nm for 3–7 μm pillar diameters. Increasing the temperature to 130 K leads to single-mode lasing for 5 μm pillars with a cold cavity quality-factor of about 8000 and an estimated threshold excitation power of 240 μW. Lasing in the thermoelectrical cooling range (up to 170 K) has been demonstrated.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142821240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-20DOI: 10.1109/JSTQE.2024.3502794
Matthew N Robinson;Stephen John Sweeney;Richard A Hogg
This paper presents a coupled-wave analysis of triangular-lattice photonic crystal surface emitting lasers (PCSELs) with transverse magnetic polarization. Six plane waves coupled by Bragg diffraction describe the two-dimensional optical coupling. Resonant mode frequencies are calculated for a lattice of circular holes at various fill factors and compared to the plane-wave expansion method. Analytical equations for coupling constants and mode frequencies are derived, and mode degeneracy as a function of fill factor is examined. Comparison to a square lattice TM mode PCSEL shows improved in-plane 2D coupling. The general equations for arbitrary unit cell dielectric functions are discussed, with predictions of the lasing mode supported by finite device calculations.
{"title":"Two-Dimensional Coupled Wave Theory for Triangular Lattice TM-Polarised Photonic Crystal Surface Emitting Lasers","authors":"Matthew N Robinson;Stephen John Sweeney;Richard A Hogg","doi":"10.1109/JSTQE.2024.3502794","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3502794","url":null,"abstract":"This paper presents a coupled-wave analysis of triangular-lattice photonic crystal surface emitting lasers (PCSELs) with transverse magnetic polarization. Six plane waves coupled by Bragg diffraction describe the two-dimensional optical coupling. Resonant mode frequencies are calculated for a lattice of circular holes at various fill factors and compared to the plane-wave expansion method. Analytical equations for coupling constants and mode frequencies are derived, and mode degeneracy as a function of fill factor is examined. Comparison to a square lattice TM mode PCSEL shows improved in-plane 2D coupling. The general equations for arbitrary unit cell dielectric functions are discussed, with predictions of the lasing mode supported by finite device calculations.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-19DOI: 10.1109/JSTQE.2024.3499859
Priyanka Petluru;Christopher R. Allemang;Shang Liu;Jifeng Liu;Tzu-Ming Lu
Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm2/Vs and 2.05 cm2/Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. This work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.
{"title":"Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications","authors":"Priyanka Petluru;Christopher R. Allemang;Shang Liu;Jifeng Liu;Tzu-Ming Lu","doi":"10.1109/JSTQE.2024.3499859","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499859","url":null,"abstract":"Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm\u0000<sup>2</sup>\u0000/Vs and 2.05 cm\u0000<sup>2</sup>\u0000/Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. This work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-08DOI: 10.1109/JSTQE.2024.3493913
Mingming Li;Jun Zheng;Zhigang Song;Wanhua Zheng
Silicon Nitride (SiN) platform, as an integrated photonics platform compatible with CMOS technology, is increasingly competitive. However, active devices on SiN platform, such as 2$,mathrm{mu m}$ wavelength band photodetector(PD), remain relatively scarce. In this work, 2$,mathrm{mu m}$ wavelength band SiN waveguide GeSn PDs based on the SiN process platform were designed, including passive SiN waveguides, tapers, and GeSn PDs. The incident light's optical field propagating in the SiN waveguide couples downward into the GeSn absorption layer in the form of an evanescent wave, achieving efficient light transmission and absorption. The Maxwell's equations are solved using the finite difference method to obtain the field distribution of the electromagnetic components on the cross-section of the waveguide, determining the dimensions of the SiN waveguide and taper for single-mode transmission. Additionally, a taper structure gradually narrowing from the input end to the output end is employed to connect the waveguide above the active layer. This structure achieves a bandwidth of 75 GHz and a responsivity of 1 A/W at 2$,mathrm{mu m}$ for the Ge${_{0.86}}$Sn${_{0.14}}$ PD by simulation. The design of waveguide integrated GeSn PD on SiN platform provides meaningful guidance for the preparation of 2$,mathrm{mu m}$ wavelength band photonic integrated circuits (PIC).
氮化硅（SiN）平台作为与 CMOS 技术兼容的集成光子学平台，其竞争力与日俱增。然而，氮化硅平台上的有源器件，如2波长带光电探测器（PD），仍然相对稀缺。在这项工作中，设计了基于 SiN 工艺平台的 2$mathrm{mu m}$ 波长带 SiN 波导 GeSn 光电探测器，包括无源 SiN 波导、锥形器和 GeSn 光电探测器。入射光的光场在 SiN 波导中传播，以蒸发波的形式向下耦合到 GeSn 吸收层，实现了高效的光传输和吸收。利用有限差分法求解麦克斯韦方程，可获得波导横截面上电磁分量的场分布，从而确定 SiN 波导和锥形结构的尺寸，以实现单模传输。此外，还采用了从输入端到输出端逐渐变窄的锥形结构来连接有源层上方的波导。通过仿真，该结构在 2$,mathrm{mu m}$ 时，Ge${_{0.86}}$Sn${_{0.14}}$ PD 的带宽达到 75 GHz，响应率达到 1 A/W 。在 SiN 平台上设计波导集成 GeSn PD 为制备 2$,mathrm{mu m}$ 波长带光子集成电路（PIC）提供了有意义的指导。
{"title":"Design of the Waveguide Integrated GeSn PDs on a SiN Platform in $2,mathrm{mu m}$ Wavelength Band","authors":"Mingming Li;Jun Zheng;Zhigang Song;Wanhua Zheng","doi":"10.1109/JSTQE.2024.3493913","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3493913","url":null,"abstract":"Silicon Nitride (SiN) platform, as an integrated photonics platform compatible with CMOS technology, is increasingly competitive. However, active devices on SiN platform, such as 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band photodetector(PD), remain relatively scarce. In this work, 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band SiN waveguide GeSn PDs based on the SiN process platform were designed, including passive SiN waveguides, tapers, and GeSn PDs. The incident light's optical field propagating in the SiN waveguide couples downward into the GeSn absorption layer in the form of an evanescent wave, achieving efficient light transmission and absorption. The Maxwell's equations are solved using the finite difference method to obtain the field distribution of the electromagnetic components on the cross-section of the waveguide, determining the dimensions of the SiN waveguide and taper for single-mode transmission. Additionally, a taper structure gradually narrowing from the input end to the output end is employed to connect the waveguide above the active layer. This structure achieves a bandwidth of 75 GHz and a responsivity of 1 A/W at 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 for the Ge\u0000<inline-formula><tex-math>${_{0.86}}$</tex-math></inline-formula>\u0000Sn\u0000<inline-formula><tex-math>${_{0.14}}$</tex-math></inline-formula>\u0000 PD by simulation. The design of waveguide integrated GeSn PD on SiN platform provides meaningful guidance for the preparation of 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band photonic integrated circuits (PIC).","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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