Pub Date : 2024-12-05DOI: 10.1109/JSTQE.2024.3499581
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Pub Date : 2024-12-04DOI: 10.1109/JSTQE.2024.3511716
Md. Shamim Reza;Tuhin Dey;Augustus W. Arbogast;Qian Meng;Seth R. Bank;Mark A. Wistey
Models of GeSn and GeCSn quantum well (QW) lasers were compared to predict net gain and threshold for computing applications. GeSn showed weak confinement of electrons in both k-space (directness) and real space, as well as a weak optical confinement factor. Using material parameters from ab-initio calculations, adding 1-2% carbon to Ge or GeSn could provide all three confinements simultaneously, with up to 350 meV of electron confinement by Ge QW barriers and a direct bandgap that is 50-220 meV below the indirect gap. A 2-4x increase in electron effective mass preserves strong confinement even in narrow, 5 nm GeCSn/Ge quantum wells. Simply keeping electrons out of non-lasing, higher energy states doubles the differential gain compared with GeSn lasers and reduces free carrier absorption, while deeper QWs further enhance gain. GeCSn laser thresholds as low as 160 A/cm 2