This work theoretically reports on the low relative intensity noise (RIN) and narrow linewidth characteristics of dual-state quantum dot (QD) lasers epitaxially grown on silicon under optical injection locking. The results illustrate that optical injection locking effectively mitigates the influence of excited state (ES) emission on the ground state (GS) optical noise, resulting in a 22 dB reduction in GS RIN at the ES threshold. Within the optical-injection-locked area, both GS and ES RIN can be reduced by a minimum of 10 dB, enabling laser operation at high bias currents while maintaining lower RIN values in both states. Moreover, optical injection locking suppresses the spectral linewidth rebroadening observed at high bias currents, achieving ultra narrow spectral linewidth. This work provides an effective reference method for integrating ultra-low intensity noise and narrow spectral linewidth light sources into silicon-based photonic integrated circuits.
这项研究从理论上报告了在光注入锁定条件下，在硅上外延生长的双态量子点（QD）激光器的低相对强度噪声（RIN）和窄线宽特性。结果表明，光注入锁定能有效减轻激发态（ES）发射对基态（GS）光噪声的影响，从而使 ES 阈值处的 GS RIN 降低了 22 dB。在光注入锁定区域内，GS 和 ES RIN 均可降低至少 10 dB，从而使激光器能够在高偏置电流下工作，同时保持两种状态下较低的 RIN 值。此外，光注入锁定还能抑制在高偏置电流下观察到的光谱线宽反扩，从而实现超窄光谱线宽。这项工作为将超低强度噪声和窄光谱线宽光源集成到硅基光子集成电路中提供了有效的参考方法。
{"title":"Ultra-Low Optical Noise in Dual-State Quantum Dot Laser on Silicon Under Optical Injection Locking","authors":"Qi Chu;Zhiyong Jin;Feng He;Yong Yao;Xiaochuan Xu;Jiawei Wang;Jianan Duan","doi":"10.1109/JSTQE.2024.3466988","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3466988","url":null,"abstract":"This work theoretically reports on the low relative intensity noise (RIN) and narrow linewidth characteristics of dual-state quantum dot (QD) lasers epitaxially grown on silicon under optical injection locking. The results illustrate that optical injection locking effectively mitigates the influence of excited state (ES) emission on the ground state (GS) optical noise, resulting in a 22 dB reduction in GS RIN at the ES threshold. Within the optical-injection-locked area, both GS and ES RIN can be reduced by a minimum of 10 dB, enabling laser operation at high bias currents while maintaining lower RIN values in both states. Moreover, optical injection locking suppresses the spectral linewidth rebroadening observed at high bias currents, achieving ultra narrow spectral linewidth. This work provides an effective reference method for integrating ultra-low intensity noise and narrow spectral linewidth light sources into silicon-based photonic integrated circuits.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142442974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3463891
{"title":"Call for Papers: Quantum materials and quantum devices","authors":"","doi":"10.1109/JSTQE.2024.3463891","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3463891","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"1-1"},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10684409","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142246421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3438637
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics","authors":"","doi":"10.1109/JSTQE.2024.3438637","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3438637","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"C4-C4"},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10684418","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142313120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3438635
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JSTQE.2024.3438635","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3438635","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"C3-C3"},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10684375","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142313121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3438631
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Publication Information","authors":"","doi":"10.1109/JSTQE.2024.3438631","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3438631","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"C2-C2"},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10684414","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142313144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3464530
Jinbin Yang;Meixin Feng;Xiujian Sun;Shuming Zhang;Masao Ikeda;Qian Sun;Hui Yang
AlGaN is usually used as the cladding layers for GaN-based laser diodes, but it features a low refractive index difference and large lattice mismatch with GaN, resulting in weak optical confinement and large tensile stress, and hence greatly affecting the laser performance. In response, indium tin oxide (ITO) and nanoporous GaN (NP-GaN) with low refractive indices have emerged as promising alternatives. In this study, we conducted simulations to assess the impact of the ITO and NP-GaN thicknesses on device performance through the finite-difference time-domain method. Furthermore, we investigated the influence of nanopore distribution within the NP-GaN, finding that the nanopore size and arrangement near the waveguide layer play key roles. Based on these insights, we propose a novel laser structure with ITO and NP-GaN cladding layers, achieving an 18% increase in the optical confinement factor, along with reductions of 13% in absorption loss and 14% in threshold gain compared to conventional laser diodes utilizing AlGaN cladding layers. It is of great interest to the III-nitride semiconductors and semiconductor laser communities.
氮化镓通常用作基于氮化镓的激光二极管的包层，但它与氮化镓的折射率差低、晶格失配大，导致光约束弱、拉伸应力大，从而极大地影响了激光性能。因此，具有低折射率的氧化铟锡（ITO）和纳米多孔氮化镓（NP-GaN）成为有前途的替代品。在本研究中，我们通过有限差分时域法进行了模拟，以评估 ITO 和 NP-GaN 厚度对器件性能的影响。此外，我们还研究了 NP-GaN 内纳米孔分布的影响，发现波导层附近的纳米孔大小和排列起着关键作用。基于这些见解，我们提出了一种具有 ITO 和 NP-GaN 包层的新型激光结构，与使用 AlGaN 包层的传统激光二极管相比，其光约束因子提高了 18%，吸收损耗降低了 13%，阈值增益降低了 14%。它引起了 III 族氮化物半导体和半导体激光界的极大兴趣。
{"title":"Structure Design of InGaN-Based Blue Laser Diodes With ITO and Nanoporous GaN Cladding Layers","authors":"Jinbin Yang;Meixin Feng;Xiujian Sun;Shuming Zhang;Masao Ikeda;Qian Sun;Hui Yang","doi":"10.1109/JSTQE.2024.3464530","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3464530","url":null,"abstract":"AlGaN is usually used as the cladding layers for GaN-based laser diodes, but it features a low refractive index difference and large lattice mismatch with GaN, resulting in weak optical confinement and large tensile stress, and hence greatly affecting the laser performance. In response, indium tin oxide (ITO) and nanoporous GaN (NP-GaN) with low refractive indices have emerged as promising alternatives. In this study, we conducted simulations to assess the impact of the ITO and NP-GaN thicknesses on device performance through the finite-difference time-domain method. Furthermore, we investigated the influence of nanopore distribution within the NP-GaN, finding that the nanopore size and arrangement near the waveguide layer play key roles. Based on these insights, we propose a novel laser structure with ITO and NP-GaN cladding layers, achieving an 18% increase in the optical confinement factor, along with reductions of 13% in absorption loss and 14% in threshold gain compared to conventional laser diodes utilizing AlGaN cladding layers. It is of great interest to the III-nitride semiconductors and semiconductor laser communities.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3463889
{"title":"Call for Papers: Advances in Neurophotonics for Monitoring Brain Function","authors":"","doi":"10.1109/JSTQE.2024.3463889","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3463889","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"1-1"},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10684412","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142313081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3465349
Trevor J. Stirling;Bilal Janjua;Amr S. Helmy
Frequency selective structures, in particular gratings, are useful to create single-mode laser diodes, however they introduce losses which can be detrimental for many applications. A theoretical framework to design Discrete Mode Laser Diodes (DMLDs) using gratings with the lowest loss possible while still achieving single-mode operation, is developed. A version of DMLDs using surface gratings is then designed and fabricated in Bragg reflection lasers (BRLs), which support second order nonlinear conversion within the laser cavity. These DMLDs show single mode operation with $>$ 40 dB SMSR, and 0.22 nm/mA, and 0.49 nm/ $^circ$ C current and temperature tunability. Difference frequency generation with 59.8%W $^{-1}$ cm $^{-2}$ efficiency is then performed to demonstrate the ability of the DMLD to support parametric optical processes within diode laser cavities.
{"title":"Discrete Mode Laser Diodes: Design Equations and Applications in Nonlinear Optics","authors":"Trevor J. Stirling;Bilal Janjua;Amr S. Helmy","doi":"10.1109/JSTQE.2024.3465349","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3465349","url":null,"abstract":"Frequency selective structures, in particular gratings, are useful to create single-mode laser diodes, however they introduce losses which can be detrimental for many applications. A theoretical framework to design Discrete Mode Laser Diodes (DMLDs) using gratings with the lowest loss possible while still achieving single-mode operation, is developed. A version of DMLDs using surface gratings is then designed and fabricated in Bragg reflection lasers (BRLs), which support second order nonlinear conversion within the laser cavity. These DMLDs show single mode operation with \u0000<inline-formula><tex-math>$>$</tex-math></inline-formula>\u000040 dB SMSR, and 0.22 nm/mA, and 0.49 nm/\u0000<inline-formula><tex-math>$^circ$</tex-math></inline-formula>\u0000C current and temperature tunability. Difference frequency generation with 59.8%W \u0000<inline-formula><tex-math>$^{-1}$</tex-math></inline-formula>\u0000 cm\u0000<inline-formula><tex-math>$^{-2}$</tex-math></inline-formula>\u0000 efficiency is then performed to demonstrate the ability of the DMLD to support parametric optical processes within diode laser cavities.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142376948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-17DOI: 10.1109/JSTQE.2024.3454781
Patrick Lo Guo Qiang;Alan Wang;Juerg Leuthold;Haisheng Rong;Tingyi Gu;Anna Lena;Xi Xiao;Bruce Wessels
{"title":"Editorial Advanced Modulators and Integration Beyond Traditional Platforms","authors":"Patrick Lo Guo Qiang;Alan Wang;Juerg Leuthold;Haisheng Rong;Tingyi Gu;Anna Lena;Xi Xiao;Bruce Wessels","doi":"10.1109/JSTQE.2024.3454781","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3454781","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"3-3"},"PeriodicalIF":4.3,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10682124","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142235685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1109/JSTQE.2024.3462489
Hang Lu;Omar Alkhazragi;Yue Wang;Tien Khee Ng;Boon S. Ooi
Random numbers, as a cornerstone in the interconnected digital world, are used in secure cryptographic protocols for commercial transactions, computing, and communications. Instead of the traditional deterministic pseudorandom numbers, physical random number generation (RNG) is currently being investigated by leveraging the chaotic dynamics of semiconductor lasers for improved security, speed, and compactness. However, those RNG approaches suffer from discrete and expensive components with limited scalability due to the enormous footprint imposed by the edge-emitting configuration, which increases the cost and impedes practical use in integrated devices. Herein, we demonstrated a parallel chip-scale RNG by first harnessing the self-chaotic dynamics of free-running broad-area vertical-cavity surface-emitting lasers (BA-VCSELs). The intense mode interaction within the broad-area cavity provides a robust foundation for ultrafast dynamics, allowing for high-security and high-speed RNG. Comparative analysis with a small-area quasi-single-mode VCSEL (QSM-VCSEL) confirms the efficacy of achieving high-speed RNG with hundreds of Gb/s from a single BA-VCSEL channel and 2 Tb/s from four channels as a proof-of-concept device. Given the easy fabrication and high scalability of VCSELs, this finding opens avenues for low-cost, massively parallel high-speed RNG chips with photodetector integration, unveiling opportunities for fields demanding unprecedented RNG rates and high levels of cybersecurity.
{"title":"Parallel On-Chip Physical Random Number Generator Based on Self-Chaotic Dynamics of Free-Running Broad-Area VCSEL Array","authors":"Hang Lu;Omar Alkhazragi;Yue Wang;Tien Khee Ng;Boon S. Ooi","doi":"10.1109/JSTQE.2024.3462489","DOIUrl":"10.1109/JSTQE.2024.3462489","url":null,"abstract":"Random numbers, as a cornerstone in the interconnected digital world, are used in secure cryptographic protocols for commercial transactions, computing, and communications. Instead of the traditional deterministic pseudorandom numbers, physical random number generation (RNG) is currently being investigated by leveraging the chaotic dynamics of semiconductor lasers for improved security, speed, and compactness. However, those RNG approaches suffer from discrete and expensive components with limited scalability due to the enormous footprint imposed by the edge-emitting configuration, which increases the cost and impedes practical use in integrated devices. Herein, we demonstrated a parallel chip-scale RNG by first harnessing the self-chaotic dynamics of free-running broad-area vertical-cavity surface-emitting lasers (BA-VCSELs). The intense mode interaction within the broad-area cavity provides a robust foundation for ultrafast dynamics, allowing for high-security and high-speed RNG. Comparative analysis with a small-area quasi-single-mode VCSEL (QSM-VCSEL) confirms the efficacy of achieving high-speed RNG with hundreds of Gb/s from a single BA-VCSEL channel and 2 Tb/s from four channels as a proof-of-concept device. Given the easy fabrication and high scalability of VCSELs, this finding opens avenues for low-cost, massively parallel high-speed RNG chips with photodetector integration, unveiling opportunities for fields demanding unprecedented RNG rates and high levels of cybersecurity.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10681270","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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