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Structure Design of InGaN-Based Blue Laser Diodes With ITO and Nanoporous GaN Cladding Layers 带有 ITO 和纳米多孔 GaN 包层的 InGaN 基蓝色激光二极管的结构设计
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-19 DOI: 10.1109/JSTQE.2024.3464530
Jinbin Yang;Meixin Feng;Xiujian Sun;Shuming Zhang;Masao Ikeda;Qian Sun;Hui Yang
AlGaN is usually used as the cladding layers for GaN-based laser diodes, but it features a low refractive index difference and large lattice mismatch with GaN, resulting in weak optical confinement and large tensile stress, and hence greatly affecting the laser performance. In response, indium tin oxide (ITO) and nanoporous GaN (NP-GaN) with low refractive indices have emerged as promising alternatives. In this study, we conducted simulations to assess the impact of the ITO and NP-GaN thicknesses on device performance through the finite-difference time-domain method. Furthermore, we investigated the influence of nanopore distribution within the NP-GaN, finding that the nanopore size and arrangement near the waveguide layer play key roles. Based on these insights, we propose a novel laser structure with ITO and NP-GaN cladding layers, achieving an 18% increase in the optical confinement factor, along with reductions of 13% in absorption loss and 14% in threshold gain compared to conventional laser diodes utilizing AlGaN cladding layers. It is of great interest to the III-nitride semiconductors and semiconductor laser communities.
氮化镓通常用作基于氮化镓的激光二极管的包层,但它与氮化镓的折射率差低、晶格失配大,导致光约束弱、拉伸应力大,从而极大地影响了激光性能。因此,具有低折射率的氧化铟锡(ITO)和纳米多孔氮化镓(NP-GaN)成为有前途的替代品。在本研究中,我们通过有限差分时域法进行了模拟,以评估 ITO 和 NP-GaN 厚度对器件性能的影响。此外,我们还研究了 NP-GaN 内纳米孔分布的影响,发现波导层附近的纳米孔大小和排列起着关键作用。基于这些见解,我们提出了一种具有 ITO 和 NP-GaN 包层的新型激光结构,与使用 AlGaN 包层的传统激光二极管相比,其光约束因子提高了 18%,吸收损耗降低了 13%,阈值增益降低了 14%。它引起了 III 族氮化物半导体和半导体激光界的极大兴趣。
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引用次数: 0
Call for Papers: Advances in Neurophotonics for Monitoring Brain Function 征集论文:用于监测大脑功能的神经光子学研究进展
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-19 DOI: 10.1109/JSTQE.2024.3463889
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引用次数: 0
Discrete Mode Laser Diodes: Design Equations and Applications in Nonlinear Optics 离散模式激光二极管:非线性光学中的设计方程与应用
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-19 DOI: 10.1109/JSTQE.2024.3465349
Trevor J. Stirling;Bilal Janjua;Amr S. Helmy
Frequency selective structures, in particular gratings, are useful to create single-mode laser diodes, however they introduce losses which can be detrimental for many applications. A theoretical framework to design Discrete Mode Laser Diodes (DMLDs) using gratings with the lowest loss possible while still achieving single-mode operation, is developed. A version of DMLDs using surface gratings is then designed and fabricated in Bragg reflection lasers (BRLs), which support second order nonlinear conversion within the laser cavity. These DMLDs show single mode operation with $>$40 dB SMSR, and 0.22 nm/mA, and 0.49 nm/$^circ$C current and temperature tunability. Difference frequency generation with 59.8%W $^{-1}$ cm$^{-2}$ efficiency is then performed to demonstrate the ability of the DMLD to support parametric optical processes within diode laser cavities.
频率选择性结构,特别是光栅,对制造单模激光二极管非常有用,但它们会带来损耗,这对许多应用都是不利的。我们开发了一个理论框架,利用损耗尽可能低的光栅设计分立模式激光二极管(DMLD),同时还能实现单模运行。然后在布拉格反射激光器(BRLs)中设计和制造了使用表面光栅的 DMLDs 版本,该版本支持激光腔内的二阶非线性转换。这些 DMLD 显示出单模运行,具有 $>$40 dB SMSR、0.22 nm/mA 和 0.49 nm/$^circ$C 电流和温度可调性。随后,还进行了效率为 59.8%W $^{-1}$ cm$^{-2}$ 的差分频率生成,以证明 DMLD 能够支持二极管激光腔内的参量光学过程。
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引用次数: 0
Editorial Advanced Modulators and Integration Beyond Traditional Platforms 编辑本段 先进调制器和集成超越传统平台
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-17 DOI: 10.1109/JSTQE.2024.3454781
Patrick Lo Guo Qiang;Alan Wang;Juerg Leuthold;Haisheng Rong;Tingyi Gu;Anna Lena;Xi Xiao;Bruce Wessels
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引用次数: 0
Parallel On-Chip Physical Random Number Generator Based on Self-Chaotic Dynamics of Free-Running Broad-Area VCSEL Array 基于自由运行宽域 VCSEL 阵列自恰动力学的并行片上物理随机数发生器
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-16 DOI: 10.1109/JSTQE.2024.3462489
Hang Lu;Omar Alkhazragi;Yue Wang;Tien Khee Ng;Boon S. Ooi
Random numbers, as a cornerstone in the interconnected digital world, are used in secure cryptographic protocols for commercial transactions, computing, and communications. Instead of the traditional deterministic pseudorandom numbers, physical random number generation (RNG) is currently being investigated by leveraging the chaotic dynamics of semiconductor lasers for improved security, speed, and compactness. However, those RNG approaches suffer from discrete and expensive components with limited scalability due to the enormous footprint imposed by the edge-emitting configuration, which increases the cost and impedes practical use in integrated devices. Herein, we demonstrated a parallel chip-scale RNG by first harnessing the self-chaotic dynamics of free-running broad-area vertical-cavity surface-emitting lasers (BA-VCSELs). The intense mode interaction within the broad-area cavity provides a robust foundation for ultrafast dynamics, allowing for high-security and high-speed RNG. Comparative analysis with a small-area quasi-single-mode VCSEL (QSM-VCSEL) confirms the efficacy of achieving high-speed RNG with hundreds of Gb/s from a single BA-VCSEL channel and 2 Tb/s from four channels as a proof-of-concept device. Given the easy fabrication and high scalability of VCSELs, this finding opens avenues for low-cost, massively parallel high-speed RNG chips with photodetector integration, unveiling opportunities for fields demanding unprecedented RNG rates and high levels of cybersecurity.
随机数是互联数字世界的基石,被用于商业交易、计算和通信的安全加密协议中。与传统的确定性伪随机数相比,目前正在研究的物理随机数生成(RNG)方法是利用半导体激光器的混沌动力学来提高安全性、速度和紧凑性。然而,这些随机数生成方法存在离散和昂贵的组件,而且由于边缘发射配置造成的巨大占地面积,可扩展性有限,从而增加了成本,阻碍了集成设备的实际应用。在这里,我们首先利用自由运行的宽面积垂直腔表面发射激光器(BA-VCSEL)的自乱动力学,展示了并行芯片级 RNG。宽腔内激烈的模式相互作用为超快动力学提供了坚实的基础,从而实现了高安全性和高速 RNG。与小面积准单模 VCSEL(QSM-VCSEL)的对比分析证实,作为概念验证器件,单个 BA-VCSEL 通道可实现数百 Gb/s 的高速 RNG,四个通道可实现 2 Tb/s 的高速 RNG。鉴于 VCSEL 的易制造性和高可扩展性,这一发现为集成了光电探测器的低成本、大规模并行高速 RNG 芯片开辟了道路,为要求前所未有的 RNG 速率和高度网络安全的领域带来了机遇。
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引用次数: 0
Optimization of Combined Coherent Gain-Switch Pulsing in a Large Array of Semiconductor Lasers 优化大型半导体激光器阵列中的相干增益开关脉冲组合
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-13 DOI: 10.1109/JSTQE.2024.3460738
Olivier Spitz;Luis E. Maldonado-Castillo;Mark A. Berrill;Yehuda Braiman
We combine gain switching and external optical feedback to achieve high-power coherent pulsing in a large array of semiconductor lasers. The simulations are performed in the framework of the Lang-Kobayashi model with modulation of the electrical bias. Long-range coupling in the network of emitters and precise tuning of the modulation frequency are key parameters to obtain both phase-locking between the emitters, and reproducible, periodic, high intensity bursts, i.e. robust, coherent pulsing. The configuration we present here relies on non-filtered conventional optical feedback and allows achieving phase-locked pulsing across the array, including at modulation frequencies that are resonant and not resonant with the external cavity frequency and its harmonics. This work impacts on the realization of phase-synchronized pulsed sources from semiconductor laser arrays and provides insight for the generation of complex nonlinear dynamics in large networks of oscillators.
我们结合增益开关和外部光反馈,在大型半导体激光器阵列中实现了高功率相干脉冲。模拟是在郎-小林模型的框架下进行的,并对电偏压进行了调制。发射器网络中的长程耦合和调制频率的精确调整是获得发射器之间锁相以及可重现的周期性高强度脉冲串(即稳健的相干脉冲)的关键参数。我们在此介绍的配置依赖于非滤波传统光反馈,可以在整个阵列中实现锁相脉冲,包括在与外部空腔频率及其谐波共振或不共振的调制频率下。这项工作对实现半导体激光器阵列的相位同步脉冲源产生了影响,并为在大型振荡器网络中产生复杂的非线性动态提供了启示。
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引用次数: 0
Ion Implantation Damage Recovery in GeSn Thin Films GeSn 薄膜中的离子注入损伤恢复
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-10 DOI: 10.1109/JSTQE.2024.3457154
Shangda Li;Shang Liu;Hryhorii Stanchu;Grey Abernathy;Baohua Li;Shui-Qing Yu;Xiaoxin Wang;Jifeng Liu
Germanium-tin (GeSn) alloys are promising materials for infrared photonics due to their tunable direct bandgap and compatibility with silicon technology. However, implantation doping of GeSn layers to achieve more sophisticated doping profiles faces challenges, particularly in restoring crystallinity after ion implantation. In this work, we investigate the recrystallization of ion-implanted GeSn thin films through rapid thermal annealing (RTA) and laser annealing. We propose a model for Sn diffusion pathways that lead to surface segregation based on distinct surface segregation patterns in GeSn layers with varying degrees of amorphization. Our results demonstrate that RTA at 400 °C effectively restores the crystallinity for GeSn thin films with up to 10.7 at.% Sn composition, despite a small amount of Sn surface segregation, while 532 nm wavelength CW laser annealing at a threshold power density above 52 kW/cm2 also achieves recrystallization without Sn segregation. These findings contribute to understanding Sn segregation mechanisms and optimizing recrystallization conditions for GeSn after implantation, advancing its potential for infrared photonics applications.
锗锡 (GeSn) 合金具有可调直接带隙和与硅技术兼容的特点,是红外光子学的理想材料。然而,对 GeSn 层进行植入掺杂以实现更复杂的掺杂曲线面临着挑战,特别是在离子注入后恢复结晶度方面。在这项研究中,我们通过快速热退火(RTA)和激光退火研究了离子注入 GeSn 薄膜的再结晶。我们根据不同非晶化程度的 GeSn 层中不同的表面偏析模式,提出了导致表面偏析的 Sn 扩散途径模型。我们的研究结果表明,尽管存在少量的锡表面偏析,但 400 °C 下的 RTA 能有效地恢复锡含量高达 10.7 at.% 的 GeSn 薄膜的结晶度,而阈值功率密度高于 52 kW/cm2 的 532 nm 波长连续波激光退火也能实现无锡偏析的再结晶。这些发现有助于了解锡偏析机制和优化 GeSn 植入后的再结晶条件,从而提高其在红外光子学应用中的潜力。
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引用次数: 0
Modeling and Simulation of Electrostatics of Ge$_{text{1-x}}$Sn$_{text{x}}$ Layers Grown on Ge Substrates 在 Ge 基底上生长的 Ge1-xSnx 层的静电建模与仿真
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.1109/JSTQE.2024.3456590
Siddhant Gangwal;Shunda Chen;Tianshu Li;Tzu-Ming Lu;Dragica Vasileska
This work introduces a comprehensive simulation tool that provides a robust 1D Schrödinger – Poisson solver for modeling the electrostatics of heterostructures with an arbitrary number of layers, and non-uniform doping profiles along with the treatment of partial ionization of dopants at low temperatures. The effective masses are derived from the first-principles calculations. The solver is used to characterize three Ge$_{text{1-x}}$Sn$_{text{x}}$/Ge heterostructures with non-uniform doping profiles and determine the subband structure at various temperatures. The simulation results of the sheet carrier densities show excellent agreement with the experimentally extracted data, thus demonstrating the capabilities of the solver.
这项工作介绍了一种综合模拟工具,它提供了一种强大的一维薛定谔-泊松求解器,用于模拟具有任意层数和非均匀掺杂剖面的异质结构的静电,以及处理掺杂剂在低温下的部分电离。有效质量由第一原理计算得出。该求解器用于表征三种具有非均匀掺杂剖面的 Ge$_{text{1-x}}$Sn$_{text{x}}$/Ge 异质结构,并确定了不同温度下的子带结构。片状载流子密度的模拟结果与实验提取的数据非常吻合,从而证明了求解器的能力。
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引用次数: 0
Composition Quantification of SiGeSn Alloys Through Time-of-Flight Secondary Ion Mass Spectrometry: Calibration Methodologies and Validation With Atom Probe Tomography 通过飞行时间二次离子质谱对 SiGeSn 合金进行成分定量:校准方法和原子探针断层扫描验证
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.1109/JSTQE.2024.3456439
Haochen Zhao;Shang Liu;Suho Park;Xu Feng;Zhaoquan Zeng;James Kolodzey;Shui-Qing Yu;Jifeng Liu;Yuping Zeng
Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is a powerful technique for elemental compositional analysis and depth profiling of materials. However, it encounters the problem of matrix effects that hinder its application. In this work, we introduce a pioneering ToF-SIMS calibration method tailored for SixGeySnz ternary alloys. SixGe1-x and Ge1-zSnz binary alloys with known compositions are used as calibration reference samples. Through a systematic SIMS quantification study of SiGe and GeSn binary alloys, we unveil a linear correlation between secondary ion intensity ratio and composition ratio for both SiGe and GeSn binary alloys, effectively mitigating the matrix effects. Extracted relative sensitivity factor (RSF) value from SixGe1-x (0.07 < x < 0.83) and Ge1-zSnz (0.066 < z < 0.183) binary alloys are subsequently applied to those of SixGeySnz (0.011 < x < 0.113, 0.863 < y < 0.935 and 0.023 < z < 0.103) ternary alloys for elemental compositions quantification. These values are cross-checked by Atom Probe Tomography (APT) analysis, an indication of the great accuracy and reliability of as-developed ToF-SIMS calibration process. The proposed method and its reference sample selection strategy in this work provide a low-cost as well as simple-to-follow calibration route for SiGeSn composition analysis, thus driving the development of next-generation multifunctional SiGeSn-related semiconductor devices.
飞行时间二次离子质谱法(ToF-SIMS)是一种用于元素成分分析和材料深度剖析的强大技术。然而,基质效应问题阻碍了它的应用。在这项工作中,我们介绍了一种针对 SixGeySnz 三元合金量身定制的开创性 ToF-SIMS 校准方法。已知成分的 SixGe1-x 和 Ge1-zSnz 二元合金被用作校准参考样品。通过对 SiGe 和 GeSn 二元合金进行系统的 SIMS 定量研究,我们揭示了 SiGe 和 GeSn 二元合金的二次离子强度比与成分比之间的线性相关关系,从而有效地减轻了基体效应。从 SixGe1-x (0.07 < x < 0.83) 和 Ge1-zSnz (0.066 < z < 0.183) 二元合金中提取的相对灵敏度因子 (RSF) 值随后被应用到 SixGeySnz (0.011 < x < 0.113, 0.863 < y < 0.935 和 0.023 < z < 0.103) 三元合金的相对灵敏度因子 (RSF) 值中,进行元素成分定量。这些值通过原子探针层析成像(APT)分析进行了交叉检验,表明所开发的 ToF-SIMS 校准过程非常准确可靠。这项工作中提出的方法及其参考样品选择策略为 SiGeSn 成分分析提供了一条低成本且简单易行的校准途径,从而推动了下一代多功能 SiGeSn 相关半导体器件的开发。
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引用次数: 0
Silicon Carbide Soliton Microcomb Generation for Narrow-Grid Optical Communications 用于窄栅光通信的碳化硅孤子微蜂窝发生器
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-06 DOI: 10.1109/JSTQE.2024.3455548
Jingwei Li;Ruixuan Wang;Haipeng Zheng;Zhensheng Jia;Qing Li
A soliton microcomb can play a crucial role in narrow-grid optical communications by replacing many independently operated lasers in wavelength-division multiplexing systems. In this work, we designed and demonstrated power-efficient soliton microcombs with 100-GHz free spectral range in an integrated 4H-SiC platform. The combination of enabling technologies, including efficient fiber coupling (3 dB insertion loss), high-quality-factor microrings (intrinsic quality factors up to 5.7 million), and the employment of the Raman effect for adiabatic accessing of the soliton state, has enabled the demonstration of soliton pump power as low as 6 mW while supporting comb powers above −20 dBm per line near the pump wavelength.
在波分复用系统中,孤子微蜂窝可取代许多独立工作的激光器,在窄栅光通信中发挥重要作用。在这项工作中,我们在一个集成的 4H-SiC 平台上设计并演示了具有 100 GHz 自由光谱范围的高能效孤子微蜂窝。高效光纤耦合(3 dB 插入损耗)、高品质因数微镜(本征品质因数高达 570 万)以及利用拉曼效应对孤子态进行绝热存取等有利技术的结合,使我们能够演示低至 6 mW 的孤子泵浦功率,同时支持泵浦波长附近每条线路超过 -20 dBm 的梳状功率。
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引用次数: 0
期刊
IEEE Journal of Selected Topics in Quantum Electronics
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