Developments in semiconductor nanotechnology have allowed the experimental realization of a new generation of semiconductor lasers with cavity sizes on the scale of the optical wavelength or smaller. Such semiconductor nanolasers present new opportunities in information technology with extremely low energy consumption, e.g. for on-chip optical communications. As the characteristic dimensions of the laser shrink to the nanoscale, assumptions that hold well for macroscopic semiconductor lasers must be revisited. The paper presents recent progress on semiconductor nanolasers, specifically emphasizing three topics: photonic crystal nanolasers with ultra-low threshold, semiconductor lasers with deep subwavelength light confinement, and semiconductor Fano lasers.
{"title":"Nanostructured Semiconductor Lasers","authors":"Jesper Mørk;Meng Xiong;Kristian Seegert;Mathias Marchal;Gaoneng Dong;Evangelos Dimopoulos;Elizaveta Semenova;Kresten Yvind;Yi Yu","doi":"10.1109/JSTQE.2024.3483900","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3483900","url":null,"abstract":"Developments in semiconductor nanotechnology have allowed the experimental realization of a new generation of semiconductor lasers with cavity sizes on the scale of the optical wavelength or smaller. Such semiconductor nanolasers present new opportunities in information technology with extremely low energy consumption, e.g. for on-chip optical communications. As the characteristic dimensions of the laser shrink to the nanoscale, assumptions that hold well for macroscopic semiconductor lasers must be revisited. The paper presents recent progress on semiconductor nanolasers, specifically emphasizing three topics: photonic crystal nanolasers with ultra-low threshold, semiconductor lasers with deep subwavelength light confinement, and semiconductor Fano lasers.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-17"},"PeriodicalIF":4.3,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10723791","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.
我们展示了用于红外光探测的硅单片生长锗锡雪崩光电二极管(APD)。我们采用了相对较薄的 Ge 缓冲层设计,以允许有效的光载流子从 GeSn 吸收层传输到硅倍增层,从而首次在 GeSn/Si APD 雪崩击穿之前观察到清晰的穿透行为和 1550 纳米波长下 0.3 A/W 的饱和初级响应率。光谱响应范围为 1500 至 1700 纳米。测得的击穿电压和击穿电压分别为 15 V 和 17 V。直接参考同一器件的饱和初级响应率,而不是先前报告中不同的 GeSn pi-n 光电二极管,获得了无可争议的倍增增益,77 K 时的最大值为 4.5,250 K 时的最大值为 1.4。在 1550 纳米和 77 K 波长下测得的峰值响应率为 1.12 A/W。
{"title":"Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection","authors":"Justin Rudie;Sylvester Amoah;Xiaoxin Wang;Rajesh Kumar;Grey Abernathy;Steven Akwabli;Perry C. Grant;Jifeng Liu;Baohua Li;Wei Du;Shui-Qing Yu","doi":"10.1109/JSTQE.2024.3482257","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3482257","url":null,"abstract":"We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142536322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In recent decades, photonic crystal surface-emitting lasers (PCSELs), a novel design of semiconductor light sources, have shown huge performance improvement. Based on compact semiconductor heterostructures, PCSELs have not only achieved near diffraction limit beam divergence but have also realized single-mode lasing from a broad emission area. Thanks to its planar cavity design, PCSEL cavities can integrate confinement structures laterally, which can potentially achieve performances otherwise unachievable in the current semiconductor lasers. This paper reviews recent advances in PCSELs, including the high-power PCSELs, laterally confined PCSEL design, PCSEL cavity size scaling for high speed, narrow laser linewidth, and coherent PCSEL arrays.
{"title":"Recent Advances in Photonic Crystal Surface Emitting Lasers","authors":"Mingsen Pan;Chhabindra Gautam;Yudong Chen;Thomas Rotter;Ganesh Balakrishnan;Weidong Zhou","doi":"10.1109/JSTQE.2024.3481451","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3481451","url":null,"abstract":"In recent decades, photonic crystal surface-emitting lasers (PCSELs), a novel design of semiconductor light sources, have shown huge performance improvement. Based on compact semiconductor heterostructures, PCSELs have not only achieved near diffraction limit beam divergence but have also realized single-mode lasing from a broad emission area. Thanks to its planar cavity design, PCSEL cavities can integrate confinement structures laterally, which can potentially achieve performances otherwise unachievable in the current semiconductor lasers. This paper reviews recent advances in PCSELs, including the high-power PCSELs, laterally confined PCSEL design, PCSEL cavity size scaling for high speed, narrow laser linewidth, and coherent PCSEL arrays.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/JSTQE.2024.3466169
Elaine D. McVay;Robert J. Deri;Salmaan H. Baxamusa;William E. Fenwick;Jiang Li;Joel B. Varley;Daniel E. Mittelberger;Luyang Wang;Kevin P. Pipe;Matthew C. Boisselle;Laina V. Gilmore;Rebecca B. Swertfeger;Mark T. Crowley;Prabhu Thiagarajan;Jiyon Song;Gerald T. Thaler;Christopher F. Schuck;Adam Dusty
This work presents a comprehensive study of early aging behavior (<500>15