Pub Date : 2024-10-08DOI: 10.1109/JSTQE.2024.3476178
Jun Zheng;Xiangquan Liu;Jinlai Cui;Qinxin Huang;Zhi Liu;Yuhua Zuo;Buwen Cheng
Silicon platform is the foundation of the modern information industry. Silicon-based semiconductor materials are compatible with the complementary metal-oxide semiconductor (CMOS) process of silicon, which can extend the application of silicon from electronic integrated circuit chips to optoelectronic integrated circuit chips. Germanium tin (GeSn), as a silicon-based narrow bandgap material, has received widespread attention in the past decade, which can provide new functions for silicon optoelectronic integrated circuit chips. By studying how to solve the problems of lattice mismatch and Sn segregation, the preparation technology of GeSn single crystal materials has made great progress. GeSn optoelectronic devices such as detectors and light-emitting devices have been successively prepared. Here, we focus on the latest developments in GeSn detectors, for infrared detection, imaging and high-speed detectors. In addition to review the state of the art work, we also propose some research directions for infrared applications.
{"title":"Research Progress of GeSn Photodetectors for Infrared Application","authors":"Jun Zheng;Xiangquan Liu;Jinlai Cui;Qinxin Huang;Zhi Liu;Yuhua Zuo;Buwen Cheng","doi":"10.1109/JSTQE.2024.3476178","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3476178","url":null,"abstract":"Silicon platform is the foundation of the modern information industry. Silicon-based semiconductor materials are compatible with the complementary metal-oxide semiconductor (CMOS) process of silicon, which can extend the application of silicon from electronic integrated circuit chips to optoelectronic integrated circuit chips. Germanium tin (GeSn), as a silicon-based narrow bandgap material, has received widespread attention in the past decade, which can provide new functions for silicon optoelectronic integrated circuit chips. By studying how to solve the problems of lattice mismatch and Sn segregation, the preparation technology of GeSn single crystal materials has made great progress. GeSn optoelectronic devices such as detectors and light-emitting devices have been successively prepared. Here, we focus on the latest developments in GeSn detectors, for infrared detection, imaging and high-speed detectors. In addition to review the state of the art work, we also propose some research directions for infrared applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Recently, the surging need for greater bandwidth in the post-5G and 6G eras has prompted scientists to research visible light communications (VLC). VLC not only addresses the foreseeable limited radio frequency (RF) spectrum resources but also serves as a reliable solution for underwater wireless optical communication (UWOC). For high-speed VLC systems, GaN-based laser diodes have shown excellent potential over LEDs as emitting components. Downscaling laser diodes is considered an effective approach for high modulation bandwidth LDs, which has yet to be well studied in III-nitride material systems. In this work, we studied the key device design parameters, including cavity length, quantum well thickness, ridge waveguide width, and PN-junction distance. We analyzed the internal parameters of such high-speed InGaN/GaN double quantum well LDs and experimentally investigated their impact on the modulation bandwidth of LDs. As a result, a modulation bandwidth of 4.47 GHz (−3 dB) has been achieved. Our work provides valuable guidance for subsequent high-speed laser designs, paving the path for energy-efficient VLC systems.
{"title":"Down-Scaling of GaN-Based Laser Diodes for High-Speed Modulation Characteristics","authors":"Leihao Sun;Junfei Wang;Chaowen Guan;Songke Fang;Zengxin Li;Junhui Hu;Yue Wang;Boon S. Ooi;Jianyang Shi;Ziwei Li;Junwen Zhang;Nan Chi;Chao Shen","doi":"10.1109/JSTQE.2024.3474797","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3474797","url":null,"abstract":"Recently, the surging need for greater bandwidth in the post-5G and 6G eras has prompted scientists to research visible light communications (VLC). VLC not only addresses the foreseeable limited radio frequency (RF) spectrum resources but also serves as a reliable solution for underwater wireless optical communication (UWOC). For high-speed VLC systems, GaN-based laser diodes have shown excellent potential over LEDs as emitting components. Downscaling laser diodes is considered an effective approach for high modulation bandwidth LDs, which has yet to be well studied in III-nitride material systems. In this work, we studied the key device design parameters, including cavity length, quantum well thickness, ridge waveguide width, and PN-junction distance. We analyzed the internal parameters of such high-speed InGaN/GaN double quantum well LDs and experimentally investigated their impact on the modulation bandwidth of LDs. As a result, a modulation bandwidth of 4.47 GHz (−3 dB) has been achieved. Our work provides valuable guidance for subsequent high-speed laser designs, paving the path for energy-efficient VLC systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-02DOI: 10.1109/JSTQE.2024.3472458
Robert J. Deri;William E. Fenwick;Jiang Li;David L. Pope;Matthew C. Boisselle;David M. Dutra;Logan Martin;Mark T. Crowley;Prabhu Thiagarajan;Gerald T. Thaler
The slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simulations show that the slope efficiency reduction is explicable by increased free carrier absorption in the waveguide region. Empirical formulas are presented to represent these effects in a closed analytic form suitable for use in simulators for diode-pumped laser systems.
{"title":"Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers","authors":"Robert J. Deri;William E. Fenwick;Jiang Li;David L. Pope;Matthew C. Boisselle;David M. Dutra;Logan Martin;Mark T. Crowley;Prabhu Thiagarajan;Gerald T. Thaler","doi":"10.1109/JSTQE.2024.3472458","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3472458","url":null,"abstract":"The slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simulations show that the slope efficiency reduction is explicable by increased free carrier absorption in the waveguide region. Empirical formulas are presented to represent these effects in a closed analytic form suitable for use in simulators for diode-pumped laser systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The article reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n ++ -GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm.
{"title":"GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser","authors":"Chuanjie Li;Meixin Feng;Jiaqi Liu;Wei Liu;Xiujian Sun;Jianxun Liu;Zhiwei Sun;Gangyi Zhu;Shuming Zhang;Qian Sun;Hui Yang","doi":"10.1109/JSTQE.2024.3469978","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3469978","url":null,"abstract":"The article reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n\u0000<sup>++</sup>\u0000-GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142452681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-27DOI: 10.1109/JSTQE.2024.3470227
Krassimir Panajotov;Andrei G. Vladimirov;Mustapha Tlidi
We present a detailed and rigorous derivation of the delay differential equations of the spin-flip model for vertical external cavity lasers with a semiconductor saturable absorption mirror. This model describes mode-locked semiconductor lasers in the ring-resonator geometry with unidirectional lasing. This contribution completes a previous communication [Vladimirov et al. Opt. Lett. , 45, 252 (2020)]. Furthermore, we present a comprehensive analytical derivation that considers phase and amplitude anisotropies, as well as the different delay times for orthogonal linear polarizations. Our findings demonstrate the coexistence of two linearly polarized frequency combs generation with slightly different repetition rates, which can be attributed to the birefringence-induced time-of-flight difference.
{"title":"Polarized Frequency Combs in a Mode-Locked VECSEL","authors":"Krassimir Panajotov;Andrei G. Vladimirov;Mustapha Tlidi","doi":"10.1109/JSTQE.2024.3470227","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3470227","url":null,"abstract":"We present a detailed and rigorous derivation of the delay differential equations of the spin-flip model for vertical external cavity lasers with a semiconductor saturable absorption mirror. This model describes mode-locked semiconductor lasers in the ring-resonator geometry with unidirectional lasing. This contribution completes a previous communication [Vladimirov et al. \u0000<italic>Opt. Lett.</i>\u0000, 45, 252 (2020)]. Furthermore, we present a comprehensive analytical derivation that considers phase and amplitude anisotropies, as well as the different delay times for orthogonal linear polarizations. Our findings demonstrate the coexistence of two linearly polarized frequency combs generation with slightly different repetition rates, which can be attributed to the birefringence-induced time-of-flight difference.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work theoretically reports on the low relative intensity noise (RIN) and narrow linewidth characteristics of dual-state quantum dot (QD) lasers epitaxially grown on silicon under optical injection locking. The results illustrate that optical injection locking effectively mitigates the influence of excited state (ES) emission on the ground state (GS) optical noise, resulting in a 22 dB reduction in GS RIN at the ES threshold. Within the optical-injection-locked area, both GS and ES RIN can be reduced by a minimum of 10 dB, enabling laser operation at high bias currents while maintaining lower RIN values in both states. Moreover, optical injection locking suppresses the spectral linewidth rebroadening observed at high bias currents, achieving ultra narrow spectral linewidth. This work provides an effective reference method for integrating ultra-low intensity noise and narrow spectral linewidth light sources into silicon-based photonic integrated circuits.
这项研究从理论上报告了在光注入锁定条件下，在硅上外延生长的双态量子点（QD）激光器的低相对强度噪声（RIN）和窄线宽特性。结果表明，光注入锁定能有效减轻激发态（ES）发射对基态（GS）光噪声的影响，从而使 ES 阈值处的 GS RIN 降低了 22 dB。在光注入锁定区域内，GS 和 ES RIN 均可降低至少 10 dB，从而使激光器能够在高偏置电流下工作，同时保持两种状态下较低的 RIN 值。此外，光注入锁定还能抑制在高偏置电流下观察到的光谱线宽反扩，从而实现超窄光谱线宽。这项工作为将超低强度噪声和窄光谱线宽光源集成到硅基光子集成电路中提供了有效的参考方法。
{"title":"Ultra-Low Optical Noise in Dual-State Quantum Dot Laser on Silicon Under Optical Injection Locking","authors":"Qi Chu;Zhiyong Jin;Feng He;Yong Yao;Xiaochuan Xu;Jiawei Wang;Jianan Duan","doi":"10.1109/JSTQE.2024.3466988","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3466988","url":null,"abstract":"This work theoretically reports on the low relative intensity noise (RIN) and narrow linewidth characteristics of dual-state quantum dot (QD) lasers epitaxially grown on silicon under optical injection locking. The results illustrate that optical injection locking effectively mitigates the influence of excited state (ES) emission on the ground state (GS) optical noise, resulting in a 22 dB reduction in GS RIN at the ES threshold. Within the optical-injection-locked area, both GS and ES RIN can be reduced by a minimum of 10 dB, enabling laser operation at high bias currents while maintaining lower RIN values in both states. Moreover, optical injection locking suppresses the spectral linewidth rebroadening observed at high bias currents, achieving ultra narrow spectral linewidth. This work provides an effective reference method for integrating ultra-low intensity noise and narrow spectral linewidth light sources into silicon-based photonic integrated circuits.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142442974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3463891
{"title":"Call for Papers: Quantum materials and quantum devices","authors":"","doi":"10.1109/JSTQE.2024.3463891","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3463891","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10684409","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142246421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3438637
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics","authors":"","doi":"10.1109/JSTQE.2024.3438637","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3438637","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10684418","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142313120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3438635
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JSTQE.2024.3438635","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3438635","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10684375","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142313121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1109/JSTQE.2024.3438631
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Publication Information","authors":"","doi":"10.1109/JSTQE.2024.3438631","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3438631","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10684414","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142313144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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