Pub Date : 2024-12-09DOI: 10.1109/JSTQE.2024.3513458
Babak Olyaeefar;Enes Şeker;Ramy El-Ganainy;Abdullah Demir
In recent years, engineering the spatial distribution of optical gain and loss has emerged as a new paradigm for tailoring light transport, trapping, and its interaction with matter. In this regard, it was shown that the notion of PT-symmetry can be employed to build new on-chip laser devices that operate in single longitudinal/transverse mode. Until recently, however, obtaining realistic power output and beam qualities from these systems was impossible. A recent study on quasi-PT-symmetric (q-PTS) lasers has changed this landscape by demonstrating up to 0.5 W output power with a high-quality Gaussian beam profile. In that work, PTS was implemented only for the higher-order mode in what can be considered a two-mode supersymmetric laser. Encouraged by these results and to present a clear roadmap for building practical chip-scale lasers with high performance, here we present a detailed comparison between the performance of PTS and q-PTS lasers in terms of power, mode filtering, and beam quality. Our experimental results, which are also supported by theoretical analysis, indicate that both q-PTS and PTS lasers scale similarly in terms of output power levels as a function of the pump current. However, when it comes to mode filtering and beam quality, our results clearly indicate that quasi-PTS lasers outperform PTS counterpart devices by a large margin. This can be explained by noting that while PTS geometry provides modal filtering for the higher order modes in the lasing cavity, it introduces side lobe contribution from the passive cavity which degrades the far-field emission pattern.
{"title":"Quasi PT-Symmetric Edge-Emitting Lasers Outperform PT-Symmetric Ones","authors":"Babak Olyaeefar;Enes Şeker;Ramy El-Ganainy;Abdullah Demir","doi":"10.1109/JSTQE.2024.3513458","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3513458","url":null,"abstract":"In recent years, engineering the spatial distribution of optical gain and loss has emerged as a new paradigm for tailoring light transport, trapping, and its interaction with matter. In this regard, it was shown that the notion of PT-symmetry can be employed to build new on-chip laser devices that operate in single longitudinal/transverse mode. Until recently, however, obtaining realistic power output and beam qualities from these systems was impossible. A recent study on quasi-PT-symmetric (q-PTS) lasers has changed this landscape by demonstrating up to 0.5 W output power with a high-quality Gaussian beam profile. In that work, PTS was implemented only for the higher-order mode in what can be considered a two-mode supersymmetric laser. Encouraged by these results and to present a clear roadmap for building practical chip-scale lasers with high performance, here we present a detailed comparison between the performance of PTS and q-PTS lasers in terms of power, mode filtering, and beam quality. Our experimental results, which are also supported by theoretical analysis, indicate that both q-PTS and PTS lasers scale similarly in terms of output power levels as a function of the pump current. However, when it comes to mode filtering and beam quality, our results clearly indicate that quasi-PTS lasers outperform PTS counterpart devices by a large margin. This can be explained by noting that while PTS geometry provides modal filtering for the higher order modes in the lasing cavity, it introduces side lobe contribution from the passive cavity which degrades the far-field emission pattern.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142890317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/JSTQE.2024.3499575
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Publication Information","authors":"","doi":"10.1109/JSTQE.2024.3499575","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499575","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"C2-C2"},"PeriodicalIF":4.3,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779591","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/JSTQE.2024.3499579
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JSTQE.2024.3499579","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499579","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"C3-C3"},"PeriodicalIF":4.3,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779584","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-05DOI: 10.1109/JSTQE.2024.3499581
{"title":"IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics","authors":"","doi":"10.1109/JSTQE.2024.3499581","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499581","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"C4-C4"},"PeriodicalIF":4.3,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779972","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-04DOI: 10.1109/JSTQE.2024.3511716
Md. Shamim Reza;Tuhin Dey;Augustus W. Arbogast;Qian Meng;Seth R. Bank;Mark A. Wistey
Models of GeSn and GeCSn quantum well (QW) lasers were compared to predict net gain and threshold for computing applications. GeSn showed weak confinement of electrons in both k-space (directness) and real space, as well as a weak optical confinement factor. Using material parameters from ab-initio calculations, adding 1-2% carbon to Ge or GeSn could provide all three confinements simultaneously, with up to 350 meV of electron confinement by Ge QW barriers and a direct bandgap that is 50-220 meV below the indirect gap. A 2-4x increase in electron effective mass preserves strong confinement even in narrow, 5 nm GeCSn/Ge quantum wells. Simply keeping electrons out of non-lasing, higher energy states doubles the differential gain compared with GeSn lasers and reduces free carrier absorption, while deeper QWs further enhance gain. GeCSn laser thresholds as low as 160 A/cm 2 are predicted for operation at temperatures of 100 °C, two orders of magnitude lower than comparable GeSn lasers.
{"title":"Confinement and Threshold Modeling for High Temperature GeSn and GeC/GeCSn Lasers","authors":"Md. Shamim Reza;Tuhin Dey;Augustus W. Arbogast;Qian Meng;Seth R. Bank;Mark A. Wistey","doi":"10.1109/JSTQE.2024.3511716","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3511716","url":null,"abstract":"Models of GeSn and GeCSn quantum well (QW) lasers were compared to predict net gain and threshold for computing applications. GeSn showed weak confinement of electrons in both k-space (directness) and real space, as well as a weak optical confinement factor. Using material parameters from ab-initio calculations, adding 1-2% carbon to Ge or GeSn could provide all three confinements simultaneously, with up to 350 meV of electron confinement by Ge QW barriers and a direct bandgap that is 50-220 meV below the indirect gap. A 2-4x increase in electron effective mass preserves strong confinement even in narrow, 5 nm GeCSn/Ge quantum wells. Simply keeping electrons out of non-lasing, higher energy states doubles the differential gain compared with GeSn lasers and reduces free carrier absorption, while deeper QWs further enhance gain. GeCSn laser thresholds as low as 160 A/cm\u0000<sup>2</sup>\u0000 are predicted for operation at temperatures of 100 °C, two orders of magnitude lower than comparable GeSn lasers.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-03DOI: 10.1109/JSTQE.2024.3500232
Patrick Uebel
{"title":"Editorial Interview: Recent Industrial Applications and Outlook of Hollow-Core Optical Fibers","authors":"Patrick Uebel","doi":"10.1109/JSTQE.2024.3500232","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3500232","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-3"},"PeriodicalIF":4.3,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10774075","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-25DOI: 10.1109/JSTQE.2024.3494952
Michael H. Frosz;Thomas D. Bradley;Md. Selim Habib;Christos Markos;John Travers;Yingying Wang
{"title":"Editorial: Advances and Applications of Hollow-Core Fibers","authors":"Michael H. Frosz;Thomas D. Bradley;Md. Selim Habib;Christos Markos;John Travers;Yingying Wang","doi":"10.1109/JSTQE.2024.3494952","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3494952","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-1"},"PeriodicalIF":4.3,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10767107","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on microlasers based on high-quality micropillars with whispering-gallery modes lasing. The use of low-absorbing Al 0.2 Ga 0.8 As/Al 0.9 Ga 0.1 As distributed Bragg reflectors and smooth pillar sidewalls enables whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. Simultaneous whispering gallery modes lasing (comb-like structure) is observed in the wavelength range of 930–970 nm for 3–7 μm pillar diameters. Increasing the temperature to 130 K leads to single-mode lasing for 5 μm pillars with a cold cavity quality-factor of about 8000 and an estimated threshold excitation power of 240 μW. Lasing in the thermoelectrical cooling range (up to 170 K) has been demonstrated.
{"title":"Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers","authors":"Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Sergey Troshkov;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil'ev;Sergey Blokhin;Nikolay Maleev;Leonid Karachinsky;Innokenty Novikov;Anton Egorov","doi":"10.1109/JSTQE.2024.3503724","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3503724","url":null,"abstract":"We report on microlasers based on high-quality micropillars with whispering-gallery modes lasing. The use of low-absorbing Al\u0000<sub>0.2</sub>\u0000Ga\u0000<sub>0.8</sub>\u0000As/Al\u0000<sub>0.9</sub>\u0000Ga\u0000<sub>0.1</sub>\u0000As distributed Bragg reflectors and smooth pillar sidewalls enables whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. Simultaneous whispering gallery modes lasing (comb-like structure) is observed in the wavelength range of 930–970 nm for 3–7 μm pillar diameters. Increasing the temperature to 130 K leads to single-mode lasing for 5 μm pillars with a cold cavity quality-factor of about 8000 and an estimated threshold excitation power of 240 μW. Lasing in the thermoelectrical cooling range (up to 170 K) has been demonstrated.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142821240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-20DOI: 10.1109/JSTQE.2024.3502794
Matthew N Robinson;Stephen John Sweeney;Richard A Hogg
This paper presents a coupled-wave analysis of triangular-lattice photonic crystal surface emitting lasers (PCSELs) with transverse magnetic polarization. Six plane waves coupled by Bragg diffraction describe the two-dimensional optical coupling. Resonant mode frequencies are calculated for a lattice of circular holes at various fill factors and compared to the plane-wave expansion method. Analytical equations for coupling constants and mode frequencies are derived, and mode degeneracy as a function of fill factor is examined. Comparison to a square lattice TM mode PCSEL shows improved in-plane 2D coupling. The general equations for arbitrary unit cell dielectric functions are discussed, with predictions of the lasing mode supported by finite device calculations.
{"title":"Two-Dimensional Coupled Wave Theory for Triangular Lattice TM-Polarised Photonic Crystal Surface Emitting Lasers","authors":"Matthew N Robinson;Stephen John Sweeney;Richard A Hogg","doi":"10.1109/JSTQE.2024.3502794","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3502794","url":null,"abstract":"This paper presents a coupled-wave analysis of triangular-lattice photonic crystal surface emitting lasers (PCSELs) with transverse magnetic polarization. Six plane waves coupled by Bragg diffraction describe the two-dimensional optical coupling. Resonant mode frequencies are calculated for a lattice of circular holes at various fill factors and compared to the plane-wave expansion method. Analytical equations for coupling constants and mode frequencies are derived, and mode degeneracy as a function of fill factor is examined. Comparison to a square lattice TM mode PCSEL shows improved in-plane 2D coupling. The general equations for arbitrary unit cell dielectric functions are discussed, with predictions of the lasing mode supported by finite device calculations.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-19DOI: 10.1109/JSTQE.2024.3499859
Priyanka Petluru;Christopher R. Allemang;Shang Liu;Jifeng Liu;Tzu-Ming Lu
Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm 2 /Vs and 2.05 cm 2 /Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. This work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.
{"title":"Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications","authors":"Priyanka Petluru;Christopher R. Allemang;Shang Liu;Jifeng Liu;Tzu-Ming Lu","doi":"10.1109/JSTQE.2024.3499859","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499859","url":null,"abstract":"Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm\u0000<sup>2</sup>\u0000/Vs and 2.05 cm\u0000<sup>2</sup>\u0000/Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. This work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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