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Nanostructured Semiconductor Lasers 纳米结构半导体激光器
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-21 DOI: 10.1109/JSTQE.2024.3483900
Jesper Mørk;Meng Xiong;Kristian Seegert;Mathias Marchal;Gaoneng Dong;Evangelos Dimopoulos;Elizaveta Semenova;Kresten Yvind;Yi Yu
Developments in semiconductor nanotechnology have allowed the experimental realization of a new generation of semiconductor lasers with cavity sizes on the scale of the optical wavelength or smaller. Such semiconductor nanolasers present new opportunities in information technology with extremely low energy consumption, e.g. for on-chip optical communications. As the characteristic dimensions of the laser shrink to the nanoscale, assumptions that hold well for macroscopic semiconductor lasers must be revisited. The paper presents recent progress on semiconductor nanolasers, specifically emphasizing three topics: photonic crystal nanolasers with ultra-low threshold, semiconductor lasers with deep subwavelength light confinement, and semiconductor Fano lasers.
半导体纳米技术的发展使得新一代半导体激光器的腔体尺寸可以达到或小于光波长。这种半导体纳米激光器为能耗极低的信息技术(如片上光通信)带来了新的机遇。随着激光器的特征尺寸缩小到纳米尺度,必须重新审视宏观半导体激光器的假设。本文介绍了半导体纳米激光器的最新进展,特别强调了三个主题:具有超低阈值的光子晶体纳米激光器、具有深亚波长光约束的半导体激光器以及半导体法诺激光器。
{"title":"Nanostructured Semiconductor Lasers","authors":"Jesper Mørk;Meng Xiong;Kristian Seegert;Mathias Marchal;Gaoneng Dong;Evangelos Dimopoulos;Elizaveta Semenova;Kresten Yvind;Yi Yu","doi":"10.1109/JSTQE.2024.3483900","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3483900","url":null,"abstract":"Developments in semiconductor nanotechnology have allowed the experimental realization of a new generation of semiconductor lasers with cavity sizes on the scale of the optical wavelength or smaller. Such semiconductor nanolasers present new opportunities in information technology with extremely low energy consumption, e.g. for on-chip optical communications. As the characteristic dimensions of the laser shrink to the nanoscale, assumptions that hold well for macroscopic semiconductor lasers must be revisited. The paper presents recent progress on semiconductor nanolasers, specifically emphasizing three topics: photonic crystal nanolasers with ultra-low threshold, semiconductor lasers with deep subwavelength light confinement, and semiconductor Fano lasers.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-17"},"PeriodicalIF":4.3,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10723791","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection 开发用于红外探测的硅基单片锗锡雪崩光电二极管
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-16 DOI: 10.1109/JSTQE.2024.3482257
Justin Rudie;Sylvester Amoah;Xiaoxin Wang;Rajesh Kumar;Grey Abernathy;Steven Akwabli;Perry C. Grant;Jifeng Liu;Baohua Li;Wei Du;Shui-Qing Yu
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.
我们展示了用于红外光探测的硅单片生长锗锡雪崩光电二极管(APD)。我们采用了相对较薄的 Ge 缓冲层设计,以允许有效的光载流子从 GeSn 吸收层传输到硅倍增层,从而首次在 GeSn/Si APD 雪崩击穿之前观察到清晰的穿透行为和 1550 纳米波长下 0.3 A/W 的饱和初级响应率。光谱响应范围为 1500 至 1700 纳米。测得的击穿电压和击穿电压分别为 15 V 和 17 V。直接参考同一器件的饱和初级响应率,而不是先前报告中不同的 GeSn pi-n 光电二极管,获得了无可争议的倍增增益,77 K 时的最大值为 4.5,250 K 时的最大值为 1.4。在 1550 纳米和 77 K 波长下测得的峰值响应率为 1.12 A/W。
{"title":"Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection","authors":"Justin Rudie;Sylvester Amoah;Xiaoxin Wang;Rajesh Kumar;Grey Abernathy;Steven Akwabli;Perry C. Grant;Jifeng Liu;Baohua Li;Wei Du;Shui-Qing Yu","doi":"10.1109/JSTQE.2024.3482257","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3482257","url":null,"abstract":"We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142536322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent Advances in Photonic Crystal Surface Emitting Lasers 光子晶体表面发射激光器的最新进展
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-16 DOI: 10.1109/JSTQE.2024.3481451
Mingsen Pan;Chhabindra Gautam;Yudong Chen;Thomas Rotter;Ganesh Balakrishnan;Weidong Zhou
In recent decades, photonic crystal surface-emitting lasers (PCSELs), a novel design of semiconductor light sources, have shown huge performance improvement. Based on compact semiconductor heterostructures, PCSELs have not only achieved near diffraction limit beam divergence but have also realized single-mode lasing from a broad emission area. Thanks to its planar cavity design, PCSEL cavities can integrate confinement structures laterally, which can potentially achieve performances otherwise unachievable in the current semiconductor lasers. This paper reviews recent advances in PCSELs, including the high-power PCSELs, laterally confined PCSEL design, PCSEL cavity size scaling for high speed, narrow laser linewidth, and coherent PCSEL arrays.
近几十年来,光子晶体表面发射激光器(PCSEL)作为一种新型的半导体光源设计,其性能有了巨大的提高。基于紧凑的半导体异质结构,PCSEL 不仅实现了接近衍射极限的光束发散,还实现了宽发射区域的单模激光。由于采用了平面腔体设计,PCSEL 腔体可以横向集成约束结构,从而有可能实现当前半导体激光器无法实现的性能。本文回顾了 PCSEL 的最新进展,包括高功率 PCSEL、横向约束 PCSEL 设计、高速 PCSEL 腔尺寸缩放、窄激光线宽和相干 PCSEL 阵列。
{"title":"Recent Advances in Photonic Crystal Surface Emitting Lasers","authors":"Mingsen Pan;Chhabindra Gautam;Yudong Chen;Thomas Rotter;Ganesh Balakrishnan;Weidong Zhou","doi":"10.1109/JSTQE.2024.3481451","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3481451","url":null,"abstract":"In recent decades, photonic crystal surface-emitting lasers (PCSELs), a novel design of semiconductor light sources, have shown huge performance improvement. Based on compact semiconductor heterostructures, PCSELs have not only achieved near diffraction limit beam divergence but have also realized single-mode lasing from a broad emission area. Thanks to its planar cavity design, PCSEL cavities can integrate confinement structures laterally, which can potentially achieve performances otherwise unachievable in the current semiconductor lasers. This paper reviews recent advances in PCSELs, including the high-power PCSELs, laterally confined PCSEL design, PCSEL cavity size scaling for high speed, narrow laser linewidth, and coherent PCSEL arrays.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Aging Mechanisms of Broad Area ∼800 nm Laser Diodes 宽域 ∼800 nm 激光二极管的老化机制
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-14 DOI: 10.1109/JSTQE.2024.3466169
Elaine D. McVay;Robert J. Deri;Salmaan H. Baxamusa;William E. Fenwick;Jiang Li;Joel B. Varley;Daniel E. Mittelberger;Luyang Wang;Kevin P. Pipe;Matthew C. Boisselle;Laina V. Gilmore;Rebecca B. Swertfeger;Mark T. Crowley;Prabhu Thiagarajan;Jiyon Song;Gerald T. Thaler;Christopher F. Schuck;Adam Dusty
This work presents a comprehensive study of early aging behavior (<500>15 cm−3 showed significantly longer delay before the onset of aging (incubation time) than devices with less than 1 × 1015 cm−3 oxygen. Generation-Recombination current and Laser Beam Induced Current measurements indicate that defect densities and aggregation are suppressed at the facets by oxygen, which can explain longer incubation times. Diagnostic data and parametric fits to diode simulation models show that increased cavity optical loss and defect density are primarily responsible for gradual power degradation during aging, rather than changes in nonradiative recombination. Mechanisms are proposed that explain this behavior, based on density functional theory (DFT) simulations and known recombination-enhanced defect generation phenomena.
这项工作对早期老化行为进行了全面研究(15 cm-3 氧气比 1 × 1015 cm-3 氧气以下的器件在老化开始前的延迟时间(孵育时间)明显更长)。生成-重组电流和激光束诱导电流测量结果表明,氧气抑制了刻面上的缺陷密度和聚集,这可以解释为什么孵育时间更长。诊断数据和二极管模拟模型的参数拟合结果表明,空腔光损耗和缺陷密度的增加是老化过程中功率逐渐下降的主要原因,而不是非辐射重组的变化。根据密度泛函理论 (DFT) 模拟和已知的重组增强缺陷生成现象,提出了解释这种行为的机制。
{"title":"Aging Mechanisms of Broad Area ∼800 nm Laser Diodes","authors":"Elaine D. McVay;Robert J. Deri;Salmaan H. Baxamusa;William E. Fenwick;Jiang Li;Joel B. Varley;Daniel E. Mittelberger;Luyang Wang;Kevin P. Pipe;Matthew C. Boisselle;Laina V. Gilmore;Rebecca B. Swertfeger;Mark T. Crowley;Prabhu Thiagarajan;Jiyon Song;Gerald T. Thaler;Christopher F. Schuck;Adam Dusty","doi":"10.1109/JSTQE.2024.3466169","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3466169","url":null,"abstract":"This work presents a comprehensive study of early aging behavior (<500>15</sup>\u0000 cm\u0000<sup>−3</sup>\u0000 showed significantly longer delay before the onset of aging (incubation time) than devices with less than 1 × 10\u0000<sup>15</sup>\u0000 cm\u0000<sup>−3</sup>\u0000 oxygen. Generation-Recombination current and Laser Beam Induced Current measurements indicate that defect densities and aggregation are suppressed at the facets by oxygen, which can explain longer incubation times. Diagnostic data and parametric fits to diode simulation models show that increased cavity optical loss and defect density are primarily responsible for gradual power degradation during aging, rather than changes in nonradiative recombination. Mechanisms are proposed that explain this behavior, based on density functional theory (DFT) simulations and known recombination-enhanced defect generation phenomena.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Enhancement Reservoir Computing System Based on Combination of VCESL Optical Feedback and Mutual Injection Structure 基于 VCESL 光反馈和互注结构组合的性能增强型水库计算系统
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-14 DOI: 10.1109/JSTQE.2024.3480455
Pengjin Zhu;Hongxiang Wang;Yuefeng Ji
In this paper, a novel performance enhancement reservoir computing (RC) system based on the combination of vertical-cavity surface emitting laser (VCSEL) optical feedback and mutual injection (OFAI) structure is proposed and demonstrated numerically. By simultaneously introducing optical feedback and mutual injection structures into the proposed RC system, the nonlinear and high-dimensional mapping capabilities are significantly improved. The proposed system exhibits the best performance in both single task processing mode and parallel processing mode compared to the other 4 RC systems. Specifically, the minimum NMSE of Santa-Fe time series prediction, waveform classification and NARMA-10 task are 0.0011, 1.058$times 10^{-8}$ and 0.101 respectively. Furthermore, since two linear polarization modes coexist in VCSELs, the parallel-polarized and orthogonal-polarized configuration is considered. Numerical results show that in all benchmark tasks, the performance of the orthogonal-polarized configuration is generally better than the parallel-polarized configuration in single task processing mode, and the conclusion is opposite in parallel processing mode, which is related to the coupling mechanism between the two polarization modes. Finally, the effect of different parameters on the system performance is explored in detail. In summary, the proposed system is interesting and valuable in the field of high-speed and low-power neuromorphic photonics.
本文提出了一种基于垂直腔表面发射激光器(VCSEL)光反馈和相互注入(OFAI)结构组合的新型性能增强型水库计算(RC)系统,并进行了数值演示。通过在拟议的 RC 系统中同时引入光反馈和互注结构,非线性和高维映射能力得到了显著提高。与其他 4 个 RC 系统相比,所提出的系统在单任务处理模式和并行处理模式下均表现出最佳性能。具体来说,Santa-Fe 时间序列预测、波形分类和 NARMA-10 任务的最小 NMSE 分别为 0.0011、1.058/times 10^{-8}$ 和 0.101。此外,由于 VCSEL 中同时存在两种线性极化模式,因此考虑了平行极化和正交极化配置。数值结果表明,在所有基准任务中,在单任务处理模式下,正交偏振配置的性能普遍优于并行偏振配置,而在并行处理模式下,结论恰恰相反,这与两种偏振模式之间的耦合机制有关。最后,详细探讨了不同参数对系统性能的影响。总之,所提出的系统在高速、低功耗神经形态光子学领域具有重要意义和价值。
{"title":"Performance Enhancement Reservoir Computing System Based on Combination of VCESL Optical Feedback and Mutual Injection Structure","authors":"Pengjin Zhu;Hongxiang Wang;Yuefeng Ji","doi":"10.1109/JSTQE.2024.3480455","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3480455","url":null,"abstract":"In this paper, a novel performance enhancement reservoir computing (RC) system based on the combination of vertical-cavity surface emitting laser (VCSEL) optical feedback and mutual injection (OFAI) structure is proposed and demonstrated numerically. By simultaneously introducing optical feedback and mutual injection structures into the proposed RC system, the nonlinear and high-dimensional mapping capabilities are significantly improved. The proposed system exhibits the best performance in both single task processing mode and parallel processing mode compared to the other 4 RC systems. Specifically, the minimum NMSE of Santa-Fe time series prediction, waveform classification and NARMA-10 task are 0.0011, 1.058\u0000<inline-formula><tex-math>$times 10^{-8}$</tex-math></inline-formula>\u0000 and 0.101 respectively. Furthermore, since two linear polarization modes coexist in VCSELs, the parallel-polarized and orthogonal-polarized configuration is considered. Numerical results show that in all benchmark tasks, the performance of the orthogonal-polarized configuration is generally better than the parallel-polarized configuration in single task processing mode, and the conclusion is opposite in parallel processing mode, which is related to the coupling mechanism between the two polarization modes. Finally, the effect of different parameters on the system performance is explored in detail. In summary, the proposed system is interesting and valuable in the field of high-speed and low-power neuromorphic photonics.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research Progress of GeSn Photodetectors for Infrared Application 红外应用 GeSn 光电探测器的研究进展
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-08 DOI: 10.1109/JSTQE.2024.3476178
Jun Zheng;Xiangquan Liu;Jinlai Cui;Qinxin Huang;Zhi Liu;Yuhua Zuo;Buwen Cheng
Silicon platform is the foundation of the modern information industry. Silicon-based semiconductor materials are compatible with the complementary metal-oxide semiconductor (CMOS) process of silicon, which can extend the application of silicon from electronic integrated circuit chips to optoelectronic integrated circuit chips. Germanium tin (GeSn), as a silicon-based narrow bandgap material, has received widespread attention in the past decade, which can provide new functions for silicon optoelectronic integrated circuit chips. By studying how to solve the problems of lattice mismatch and Sn segregation, the preparation technology of GeSn single crystal materials has made great progress. GeSn optoelectronic devices such as detectors and light-emitting devices have been successively prepared. Here, we focus on the latest developments in GeSn detectors, for infrared detection, imaging and high-speed detectors. In addition to review the state of the art work, we also propose some research directions for infrared applications.
硅平台是现代信息产业的基础。硅基半导体材料与硅的互补金属氧化物半导体(CMOS)工艺兼容,可以将硅的应用从电子集成电路芯片扩展到光电集成电路芯片。锗锡(GeSn)作为一种硅基窄带隙材料,近十年来受到广泛关注,它可以为硅光电集成电路芯片提供新的功能。通过研究如何解决晶格失配和锡偏析问题,GeSn 单晶材料的制备技术取得了重大进展。探测器和发光器件等 GeSn 光电子器件也相继制备出来。在此,我们重点介绍 GeSn 探测器在红外探测、成像和高速探测器方面的最新进展。除了回顾最新研究成果,我们还提出了一些红外应用的研究方向。
{"title":"Research Progress of GeSn Photodetectors for Infrared Application","authors":"Jun Zheng;Xiangquan Liu;Jinlai Cui;Qinxin Huang;Zhi Liu;Yuhua Zuo;Buwen Cheng","doi":"10.1109/JSTQE.2024.3476178","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3476178","url":null,"abstract":"Silicon platform is the foundation of the modern information industry. Silicon-based semiconductor materials are compatible with the complementary metal-oxide semiconductor (CMOS) process of silicon, which can extend the application of silicon from electronic integrated circuit chips to optoelectronic integrated circuit chips. Germanium tin (GeSn), as a silicon-based narrow bandgap material, has received widespread attention in the past decade, which can provide new functions for silicon optoelectronic integrated circuit chips. By studying how to solve the problems of lattice mismatch and Sn segregation, the preparation technology of GeSn single crystal materials has made great progress. GeSn optoelectronic devices such as detectors and light-emitting devices have been successively prepared. Here, we focus on the latest developments in GeSn detectors, for infrared detection, imaging and high-speed detectors. In addition to review the state of the art work, we also propose some research directions for infrared applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Down-Scaling of GaN-Based Laser Diodes for High-Speed Modulation Characteristics 缩小氮化镓基激光二极管的规模以实现高速调制特性
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-04 DOI: 10.1109/JSTQE.2024.3474797
Leihao Sun;Junfei Wang;Chaowen Guan;Songke Fang;Zengxin Li;Junhui Hu;Yue Wang;Boon S. Ooi;Jianyang Shi;Ziwei Li;Junwen Zhang;Nan Chi;Chao Shen
Recently, the surging need for greater bandwidth in the post-5G and 6G eras has prompted scientists to research visible light communications (VLC). VLC not only addresses the foreseeable limited radio frequency (RF) spectrum resources but also serves as a reliable solution for underwater wireless optical communication (UWOC). For high-speed VLC systems, GaN-based laser diodes have shown excellent potential over LEDs as emitting components. Downscaling laser diodes is considered an effective approach for high modulation bandwidth LDs, which has yet to be well studied in III-nitride material systems. In this work, we studied the key device design parameters, including cavity length, quantum well thickness, ridge waveguide width, and PN-junction distance. We analyzed the internal parameters of such high-speed InGaN/GaN double quantum well LDs and experimentally investigated their impact on the modulation bandwidth of LDs. As a result, a modulation bandwidth of 4.47 GHz (−3 dB) has been achieved. Our work provides valuable guidance for subsequent high-speed laser designs, paving the path for energy-efficient VLC systems.
最近,后 5G 和 6G 时代对更大带宽的需求激增,促使科学家们开始研究可见光通信(VLC)。可见光通信不仅可以解决可预见的射频(RF)频谱资源有限的问题,还可以作为水下无线光通信(UWOC)的可靠解决方案。在高速 VLC 系统中,氮化镓基激光二极管作为发光元件比 LED 更具潜力。降频激光二极管被认为是实现高调制带宽激光二极管的有效方法,但在 III 族氮化物材料系统中,这种方法尚未得到充分研究。在这项工作中,我们研究了关键器件设计参数,包括腔长、量子阱厚度、脊波导宽度和 PN 结距离。我们分析了这种高速 InGaN/GaN 双量子阱 LD 的内部参数,并通过实验研究了它们对 LD 调制带宽的影响。结果,调制带宽达到了 4.47 GHz (-3 dB)。我们的工作为后续的高速激光器设计提供了宝贵的指导,为高能效 VLC 系统铺平了道路。
{"title":"Down-Scaling of GaN-Based Laser Diodes for High-Speed Modulation Characteristics","authors":"Leihao Sun;Junfei Wang;Chaowen Guan;Songke Fang;Zengxin Li;Junhui Hu;Yue Wang;Boon S. Ooi;Jianyang Shi;Ziwei Li;Junwen Zhang;Nan Chi;Chao Shen","doi":"10.1109/JSTQE.2024.3474797","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3474797","url":null,"abstract":"Recently, the surging need for greater bandwidth in the post-5G and 6G eras has prompted scientists to research visible light communications (VLC). VLC not only addresses the foreseeable limited radio frequency (RF) spectrum resources but also serves as a reliable solution for underwater wireless optical communication (UWOC). For high-speed VLC systems, GaN-based laser diodes have shown excellent potential over LEDs as emitting components. Downscaling laser diodes is considered an effective approach for high modulation bandwidth LDs, which has yet to be well studied in III-nitride material systems. In this work, we studied the key device design parameters, including cavity length, quantum well thickness, ridge waveguide width, and PN-junction distance. We analyzed the internal parameters of such high-speed InGaN/GaN double quantum well LDs and experimentally investigated their impact on the modulation bandwidth of LDs. As a result, a modulation bandwidth of 4.47 GHz (−3 dB) has been achieved. Our work provides valuable guidance for subsequent high-speed laser designs, paving the path for energy-efficient VLC systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers AlInGaAs 二极管激光器在高电流密度下的斜率效率和电压降低率
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-02 DOI: 10.1109/JSTQE.2024.3472458
Robert J. Deri;William E. Fenwick;Jiang Li;David L. Pope;Matthew C. Boisselle;David M. Dutra;Logan Martin;Mark T. Crowley;Prabhu Thiagarajan;Gerald T. Thaler
The slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simulations show that the slope efficiency reduction is explicable by increased free carrier absorption in the waveguide region. Empirical formulas are presented to represent these effects in a closed analytic form suitable for use in simulators for diode-pumped laser systems.
据观察,在电流远高于阈值的准 CW 脉冲操作条件下,865 nm 附近宽面积 AlInGaAs 激光二极管的斜率效率和驱动电压会显著降低,而热效应或异质结势垒上的载流子泄漏无法解释这种情况。模拟结果表明,斜率效率降低的原因是波导区域的自由载流子吸收增加。本文提出了经验公式,以适合二极管泵浦激光系统模拟器使用的封闭解析形式来表示这些效应。
{"title":"Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers","authors":"Robert J. Deri;William E. Fenwick;Jiang Li;David L. Pope;Matthew C. Boisselle;David M. Dutra;Logan Martin;Mark T. Crowley;Prabhu Thiagarajan;Gerald T. Thaler","doi":"10.1109/JSTQE.2024.3472458","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3472458","url":null,"abstract":"The slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simulations show that the slope efficiency reduction is explicable by increased free carrier absorption in the waveguide region. Empirical formulas are presented to represent these effects in a closed analytic form suitable for use in simulators for diode-pumped laser systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser 基于氮化镓的谐振腔发光二极管走向垂直腔表面发射激光器
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-27 DOI: 10.1109/JSTQE.2024.3469978
Chuanjie Li;Meixin Feng;Jiaqi Liu;Wei Liu;Xiujian Sun;Jianxun Liu;Zhiwei Sun;Gangyi Zhu;Shuming Zhang;Qian Sun;Hui Yang
The article reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n++-GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm.
文章报道了采用纳米多孔(NP)GaN/n-GaN分布式布拉格反射器(DBR)成功制造出基于氮化镓的谐振腔发光二极管(RCLED)。要实现设计的中心波长和高反射率,精确控制 NP GaN 层的厚度至关重要。通过在纳米多孔氮化镓(n++-GaN)外延生长的厚度设计中引入空间电荷区的概念,实现了对氮化镓/氮化镓分布式布拉格反射器(DBR)中心波长的精确调节。在光注入条件下,纵模激光波长为 438 nm,半最大全宽(FWHM)约为 0.7 nm。在电注入条件下,RCLED 发射峰的 FWHM 约为 3.4 nm。
{"title":"GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser","authors":"Chuanjie Li;Meixin Feng;Jiaqi Liu;Wei Liu;Xiujian Sun;Jianxun Liu;Zhiwei Sun;Gangyi Zhu;Shuming Zhang;Qian Sun;Hui Yang","doi":"10.1109/JSTQE.2024.3469978","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3469978","url":null,"abstract":"The article reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n\u0000<sup>++</sup>\u0000-GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142452681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarized Frequency Combs in a Mode-Locked VECSEL 模式锁定 VECSEL 中的偏振频梳
IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-27 DOI: 10.1109/JSTQE.2024.3470227
Krassimir Panajotov;Andrei G. Vladimirov;Mustapha Tlidi
We present a detailed and rigorous derivation of the delay differential equations of the spin-flip model for vertical external cavity lasers with a semiconductor saturable absorption mirror. This model describes mode-locked semiconductor lasers in the ring-resonator geometry with unidirectional lasing. This contribution completes a previous communication [Vladimirov et al. Opt. Lett., 45, 252 (2020)]. Furthermore, we present a comprehensive analytical derivation that considers phase and amplitude anisotropies, as well as the different delay times for orthogonal linear polarizations. Our findings demonstrate the coexistence of two linearly polarized frequency combs generation with slightly different repetition rates, which can be attributed to the birefringence-induced time-of-flight difference.
我们详细而严格地推导了带有半导体可饱和吸收镜的垂直外腔激光器自旋翻转模型的延迟微分方程。该模型描述了单向激光的环形谐振器几何中的锁模半导体激光器。这一贡献完善了之前的通信[Vladimirov 等人,Opt. Lett.,45, 252 (2020)]。此外,我们还提出了全面的分析推导,考虑了相位和振幅各向异性,以及正交线性极化的不同延迟时间。我们的研究结果表明,两个线性偏振频梳的重复率略有不同,但同时存在,这可归因于双折射引起的飞行时间差。
{"title":"Polarized Frequency Combs in a Mode-Locked VECSEL","authors":"Krassimir Panajotov;Andrei G. Vladimirov;Mustapha Tlidi","doi":"10.1109/JSTQE.2024.3470227","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3470227","url":null,"abstract":"We present a detailed and rigorous derivation of the delay differential equations of the spin-flip model for vertical external cavity lasers with a semiconductor saturable absorption mirror. This model describes mode-locked semiconductor lasers in the ring-resonator geometry with unidirectional lasing. This contribution completes a previous communication [Vladimirov et al. \u0000<italic>Opt. Lett.</i>\u0000, 45, 252 (2020)]. Furthermore, we present a comprehensive analytical derivation that considers phase and amplitude anisotropies, as well as the different delay times for orthogonal linear polarizations. Our findings demonstrate the coexistence of two linearly polarized frequency combs generation with slightly different repetition rates, which can be attributed to the birefringence-induced time-of-flight difference.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
IEEE Journal of Selected Topics in Quantum Electronics
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