High brightness semiconductor diode lasers can provide tremendous system-level advantages for many applications. Recent advancements in InP-based edge-emitting diode lasers operating in the 13xx – 17xx nm wavelength band could enable compact, direct diode solutions with performance metrics that previously have only been met by fiber lasers or solid-state laser systems. In this work, we report on tapered diode lasers that operate at 1550 nm with high efficiency and high brightness. These single emitter devices produce 5 W of continuous wave output power with 23% electrical-to-optical efficiency. The brightness is 187 MW cm -2 sr -1 , and the slow axis linear brightness is 9.1 W mm -1 mrad -1 . The percentage of power in the central lobe of the output beam is 87%, indicative of good beam quality. These results significantly impact applications such as communications and sensing.
{"title":"Brightness Scaling of InP-Based Diode Lasers for Communication and Sensing Applications","authors":"Jenna Campbell;Michelle Labrecque;Igor Kudryashov;Kevin McClune;Allen Chu;Matthew Larkins;Sarah Kinney;Leif Johansson;Milan Mashanovitch;Paul O. Leisher","doi":"10.1109/JSTQE.2024.3445771","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3445771","url":null,"abstract":"High brightness semiconductor diode lasers can provide tremendous system-level advantages for many applications. Recent advancements in InP-based edge-emitting diode lasers operating in the 13xx – 17xx nm wavelength band could enable compact, direct diode solutions with performance metrics that previously have only been met by fiber lasers or solid-state laser systems. In this work, we report on tapered diode lasers that operate at 1550 nm with high efficiency and high brightness. These single emitter devices produce 5 W of continuous wave output power with 23% electrical-to-optical efficiency. The brightness is 187 MW cm\u0000<sup>-2</sup>\u0000 sr\u0000<sup>-1</sup>\u0000, and the slow axis linear brightness is 9.1 W mm\u0000<sup>-1</sup>\u0000 mrad\u0000<sup>-1</sup>\u0000. The percentage of power in the central lobe of the output beam is 87%, indicative of good beam quality. These results significantly impact applications such as communications and sensing.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142123020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1109/JSTQE.2024.3444923
David Coenen;Huseyin Sar;Aleksandrs Marinins;Stuart Smyth;Andrew McKee;Yoojin Ban;Joris Van Campenhout;Herman Oprins
Optical transceivers for data center applications require multi-wavelength light sources, which can either be integrated or external from the transceiver die. Scaling up the number of communication channels implies the need for large laser arrays. Since the energy efficiency of semiconductor lasers is very sensitive to temperature, it is imperative to employ a thermal-aware design and minimize self-heating and thermal crosstalk. In this paper, a thermal scaling analysis is performed on hybrid, flip-chip integrated InP-on-Si lasers. A finite element thermal model of a single gain section laser is validated with experimental measurement of the laser thermal resistance and extrapolated to accomodate multi-section operation. The impact of adding a top-side heat sink as well as increasing laser length and width are investigated. The detailed 3D simulation results are used to build a compact, coupled thermo-optic model of a large array of multiple lasers, considering thermal crosstalk. Finally, this model is applied to a test case with 8 WDM channels and 8 ports. Depending on the configuration (integrated vs. external) and ambient temperature, different optimal designs arise based on both energy efficiency and module footprint. The presented modelling framework is generic; it can be applied to different types of lasers and systems.
{"title":"Thermal Scaling Analysis of Large Hybrid Laser Arrays for Co-Packaged Optics","authors":"David Coenen;Huseyin Sar;Aleksandrs Marinins;Stuart Smyth;Andrew McKee;Yoojin Ban;Joris Van Campenhout;Herman Oprins","doi":"10.1109/JSTQE.2024.3444923","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3444923","url":null,"abstract":"Optical transceivers for data center applications require multi-wavelength light sources, which can either be integrated or external from the transceiver die. Scaling up the number of communication channels implies the need for large laser arrays. Since the energy efficiency of semiconductor lasers is very sensitive to temperature, it is imperative to employ a thermal-aware design and minimize self-heating and thermal crosstalk. In this paper, a thermal scaling analysis is performed on hybrid, flip-chip integrated InP-on-Si lasers. A finite element thermal model of a single gain section laser is validated with experimental measurement of the laser thermal resistance and extrapolated to accomodate multi-section operation. The impact of adding a top-side heat sink as well as increasing laser length and width are investigated. The detailed 3D simulation results are used to build a compact, coupled thermo-optic model of a large array of multiple lasers, considering thermal crosstalk. Finally, this model is applied to a test case with 8 WDM channels and 8 ports. Depending on the configuration (integrated vs. external) and ambient temperature, different optimal designs arise based on both energy efficiency and module footprint. The presented modelling framework is generic; it can be applied to different types of lasers and systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142137592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-13DOI: 10.1109/JSTQE.2024.3442429
Mindaugas Radziunas;Volker Raab
We consider a brightness- and power-scalable rectified polarization beam combining scheme for high-power, broad-area edge-emitting semiconductor laser diodes. The coupling of $2^{m}$ emitters is achieved through Lyot-filtered optical reinjection from a specially designed multi-stage external cavity, which forces individual diodes to lase on interleaved frequency combs with overlapping envelopes. Simulations of up to sixteen coupled emitters and analysis of the calculated beams suggest that, under ideal conditions, a beam coupling efficiency of approximately 90% can be expected. Reducing optical losses within the external cavity is crucial for improving this efficiency in experimental systems.
{"title":"Modeling and Simulation of a Cascaded Polarization-Coupled System of Broad-Area Semiconductor Lasers","authors":"Mindaugas Radziunas;Volker Raab","doi":"10.1109/JSTQE.2024.3442429","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3442429","url":null,"abstract":"We consider a brightness- and power-scalable rectified polarization beam combining scheme for high-power, broad-area edge-emitting semiconductor laser diodes. The coupling of \u0000<inline-formula><tex-math>$2^{m}$</tex-math></inline-formula>\u0000 emitters is achieved through Lyot-filtered optical reinjection from a specially designed multi-stage external cavity, which forces individual diodes to lase on interleaved frequency combs with overlapping envelopes. Simulations of up to sixteen coupled emitters and analysis of the calculated beams suggest that, under ideal conditions, a beam coupling efficiency of approximately 90% can be expected. Reducing optical losses within the external cavity is crucial for improving this efficiency in experimental systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142123021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-13DOI: 10.1109/JSTQE.2024.3442990
Dung-Sheng Tsai;Chao-Yu Tiao;Xiu-Qi Yu;Hsin-Ying Lee;Wei-Chen Tu
CdZnS/ZnS + CsPbBr 3 + InP/ZnSeS mixed quantum dot (QD) based metal–semiconductor–metal photodetectors (MSM PDs) for white-light detection were fabricated successfully by low-cost drop-cast methods. The photoluminescence (PL) spectra reveal emission peaks of ∼ 430 nm (blue light), ∼515 nm (green light), and ∼600 nm (red light) for CdZnS/ZnS, CsPbBr 3 , and InP/ZnSeS QDs, respectively. Furthermore, CdZnS/ZnS + CsPbBr 3 + InP/ZnSeS mixed QDs exhibit a broad absorption spectrum from ultraviolet (UV) to infrared (IR), in contrast to the narrower absorption range of CdZnS/ZnS, CsPbBr 3 , and InP/ZnSeS QDs. The morphology and size of CdZnS/ZnS (∼10 nm), CsPbBr 3 (∼12 nm), and InP/ZnSeS (∼ 5 nm) QDs were investigated using high-resolution transmission electron microscopy (HRTEM). With switching on/off white-light illumination, CdZnS/ZnS + CsPbBr 3 + InP/ZnSeS mixed QD-based MSM PDs exhibit outstanding performance attributed to the broadband light absorption of the mixed QDs, including an ultra-high photo-to-dark current ratio (PDCR: ∼590), high detectivity (up to ∼0.7 × 10 10 cm Hz 1/2 /W), and fast operation speed (rise time and fall time: ∼150 ms). Compared to the CdZnS/ZnS + InP/ZnSeS mixed QD-based PDs, the CdZnS/ZnS + CsPbBr 3 + InP/ZnSeS mixed QD-based PDs show better photoresponse, resulting from higher photocurrent levels by an increase in green light absorption and a decrease in band offset at the interface after adding CsPbBr 3 QDs. These results support the use of the inorganic/perovskite mixed QD-based PDs in next-generation broadband photodetection.
{"title":"High-Performance White-Light Detection of Inorganic/Perovskite Mixed Quantum Dot Layers Fabricated by Drop-Casting Methods","authors":"Dung-Sheng Tsai;Chao-Yu Tiao;Xiu-Qi Yu;Hsin-Ying Lee;Wei-Chen Tu","doi":"10.1109/JSTQE.2024.3442990","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3442990","url":null,"abstract":"CdZnS/ZnS + CsPbBr\u0000<sub>3</sub>\u0000 + InP/ZnSeS mixed quantum dot (QD) based metal–semiconductor–metal photodetectors (MSM PDs) for white-light detection were fabricated successfully by low-cost drop-cast methods. The photoluminescence (PL) spectra reveal emission peaks of ∼ 430 nm (blue light), ∼515 nm (green light), and ∼600 nm (red light) for CdZnS/ZnS, CsPbBr\u0000<sub>3</sub>\u0000, and InP/ZnSeS QDs, respectively. Furthermore, CdZnS/ZnS + CsPbBr\u0000<sub>3</sub>\u0000 + InP/ZnSeS mixed QDs exhibit a broad absorption spectrum from ultraviolet (UV) to infrared (IR), in contrast to the narrower absorption range of CdZnS/ZnS, CsPbBr\u0000<sub>3</sub>\u0000, and InP/ZnSeS QDs. The morphology and size of CdZnS/ZnS (∼10 nm), CsPbBr\u0000<sub>3</sub>\u0000 (∼12 nm), and InP/ZnSeS (∼ 5 nm) QDs were investigated using high-resolution transmission electron microscopy (HRTEM). With switching on/off white-light illumination, CdZnS/ZnS + CsPbBr\u0000<sub>3</sub>\u0000 + InP/ZnSeS mixed QD-based MSM PDs exhibit outstanding performance attributed to the broadband light absorption of the mixed QDs, including an ultra-high photo-to-dark current ratio (PDCR: ∼590), high detectivity (up to ∼0.7 × 10\u0000<sup>10</sup>\u0000 cm Hz\u0000<sup>1/2</sup>\u0000/W), and fast operation speed (rise time and fall time: ∼150 ms). Compared to the CdZnS/ZnS + InP/ZnSeS mixed QD-based PDs, the CdZnS/ZnS + CsPbBr\u0000<sub>3</sub>\u0000 + InP/ZnSeS mixed QD-based PDs show better photoresponse, resulting from higher photocurrent levels by an increase in green light absorption and a decrease in band offset at the interface after adding CsPbBr\u0000<sub>3</sub>\u0000 QDs. These results support the use of the inorganic/perovskite mixed QD-based PDs in next-generation broadband photodetection.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-08DOI: 10.1109/JSTQE.2024.3440179
Lukas Uhlig;Dominic J. Kunzmann;Ulrich T. Schwarz
Mode competition in semiconductor laser diodes typically causes a continuously repeating spectral modulation by periodic mode hopping through longitudinal modes. High-power laser diodes include a broad ridge waveguide that supports multiple lateral mode operation, interacting with the dynamically changing spatial distribution of charge carriers. We investigate the time-dependent behavior of longitudinal-lateral mode competition in III-nitride-based broad-ridge laser diodes, involving several longitudinal mode combs, each corresponding to a different lateral mode. For this, we perform lateral scans of streak camera measurements, take single shot images, and develop a rate equation model for numerical simulation of the process. We observe mode competition that involves all active lateral modes, driven by asymmetric mode coupling. In particular, the small wavelength spacing between adjacent lateral modes and spatial lateral hole burning are influencing mode competition dynamics in broad-ridge devices. Furthermore, we investigate the role of mode clustering on the dynamical behavior and how long-time periodicity depends on the laser diode properties.
半导体激光二极管中的模式竞争通常是通过纵向模式的周期性跳模造成连续重复的光谱调制。高功率激光二极管包括一个宽脊波导，它支持多种横向模式操作，并与动态变化的电荷载流子空间分布相互作用。我们研究了基于 III 氮化物的宽脊激光二极管中纵向-横向模式竞争随时间变化的行为，其中涉及多个纵向模式梳，每个梳对应一个不同的横向模式。为此，我们对条纹照相机的测量结果进行横向扫描，拍摄单发图像，并建立了一个速率方程模型，用于对这一过程进行数值模拟。在非对称模式耦合的驱动下，我们观察到涉及所有活动横向模式的模式竞争。特别是，相邻横向模式之间的小波长间隔和空间横向孔燃烧影响了宽脊器件中的模式竞争动力学。此外，我们还研究了模式聚类对动力学行为的作用，以及长时间周期性如何取决于激光二极管的特性。
{"title":"Mode Competition Between Longitudinal and Lateral Modes in III-Nitride Broad-Ridge Laser Diodes","authors":"Lukas Uhlig;Dominic J. Kunzmann;Ulrich T. Schwarz","doi":"10.1109/JSTQE.2024.3440179","DOIUrl":"10.1109/JSTQE.2024.3440179","url":null,"abstract":"Mode competition in semiconductor laser diodes typically causes a continuously repeating spectral modulation by periodic mode hopping through longitudinal modes. High-power laser diodes include a broad ridge waveguide that supports multiple lateral mode operation, interacting with the dynamically changing spatial distribution of charge carriers. We investigate the time-dependent behavior of longitudinal-lateral mode competition in III-nitride-based broad-ridge laser diodes, involving several longitudinal mode combs, each corresponding to a different lateral mode. For this, we perform lateral scans of streak camera measurements, take single shot images, and develop a rate equation model for numerical simulation of the process. We observe mode competition that involves all active lateral modes, driven by asymmetric mode coupling. In particular, the small wavelength spacing between adjacent lateral modes and spatial lateral hole burning are influencing mode competition dynamics in broad-ridge devices. Furthermore, we investigate the role of mode clustering on the dynamical behavior and how long-time periodicity depends on the laser diode properties.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10631275","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141948739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-06DOI: 10.1109/JSTQE.2024.3439495
Lorenzo Finazzi;Raffaele Giani;Omar Concepción;Dan Buca;Vincent Reboud;Giovanni Isella;Alberto Tosi
We propose and compare two back-side illuminated GeSn avalanche photodiode (APD) mesa structures with 15% tin content operating at photon wavelengths up to 3.3 μm, suitable for applications like methane gas sensing and analysis of tampered olive oil. The two structures have different multiplication materials: a) silicon, which requires an additional Ge Strain-Relaxed Buffer (SRB) layer for high-quality GeSn growth; b) germanium, which is acting also as SRB layer. The latter design is innovative compared to the state-of-the-art and it proposed to: i) reduce the space charge region (SCR) width by avoiding a too thick Ge SRB, which is required for growing high-tin-content GeSn; ii) avoid one supplementary non-lattice matched heterojunction in the SCR. Physical models for GeSn are discussed for the most relevant parameters of APD design. Simulations are performed in the electrical and optical domains, for evaluating the main figures of merit of APDs and comparing the expected performances between the two designs. Finally, we present the modeling and design of a focalizing all-dielectric metalens, integrated on the detector back-side, for improving the photon collection efficiency at the same active volume size, thus improving the signal-to-noise ratio.
{"title":"Modeling and Design of GeSn Avalanche Photodiodes With High Tin Content for Applications at 3.3 μm","authors":"Lorenzo Finazzi;Raffaele Giani;Omar Concepción;Dan Buca;Vincent Reboud;Giovanni Isella;Alberto Tosi","doi":"10.1109/JSTQE.2024.3439495","DOIUrl":"10.1109/JSTQE.2024.3439495","url":null,"abstract":"We propose and compare two back-side illuminated GeSn avalanche photodiode (APD) mesa structures with 15% tin content operating at photon wavelengths up to 3.3 μm, suitable for applications like methane gas sensing and analysis of tampered olive oil. The two structures have different multiplication materials: a) silicon, which requires an additional Ge Strain-Relaxed Buffer (SRB) layer for high-quality GeSn growth; b) germanium, which is acting also as SRB layer. The latter design is innovative compared to the state-of-the-art and it proposed to: i) reduce the space charge region (SCR) width by avoiding a too thick Ge SRB, which is required for growing high-tin-content GeSn; ii) avoid one supplementary non-lattice matched heterojunction in the SCR. Physical models for GeSn are discussed for the most relevant parameters of APD design. Simulations are performed in the electrical and optical domains, for evaluating the main figures of merit of APDs and comparing the expected performances between the two designs. Finally, we present the modeling and design of a focalizing all-dielectric metalens, integrated on the detector back-side, for improving the photon collection efficiency at the same active volume size, thus improving the signal-to-noise ratio.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10628039","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141948740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Multistacked GeSiSn/Si quantum dot (MQD) structures of different compositions were obtained by molecular-beam epitaxy. The elastically strained state of GeSiSn/Si MQD structures was confirmed by the presence of diffraction maxima on X-ray rocking curves. The optical properties of GeSiSn/Si MQD structures were studied by Fourier transform infrared (FTIR) photoluminescence spectroscopy. The structures exhibited photoluminescence peaks in the 0.6–0.8 eV range originating from the QD region. The calculations showed that the observed peaks correspond to the radiative transition between the Δ 4 conduction band in Si and the energy level of heavy holes in the QDs. The peak positions in the PL spectra are in good correlation with the calculation results. It was demonstrated that the transition energy depends strongly on the composition and size of GeSiSn/Si QDs. The p-i-n photodiodes were developed based on the GeSiSn/Si MQD structures. The cutoff wavelength maximum reached the value of 2.65 μm for Ge 0.80 Si 0.11 Sn 0.09 /Si MQD p-i-n photodiodes.
{"title":"Structural, Optical and Electrophysical Properties of MBE-Based Multistacked GeSiSn Quantum Dots","authors":"Vyacheslav Timofeev;Ilya Skvortsov;Vladimir Mashanov;Alexandr Nikiforov;Ivan Loshkarev;Alexey Bloshkin;Victor Kirienko;Dmitry Kolyada;Dmitrii Firsov;Oleg Komkov","doi":"10.1109/JSTQE.2024.3439526","DOIUrl":"10.1109/JSTQE.2024.3439526","url":null,"abstract":"Multistacked GeSiSn/Si quantum dot (MQD) structures of different compositions were obtained by molecular-beam epitaxy. The elastically strained state of GeSiSn/Si MQD structures was confirmed by the presence of diffraction maxima on X-ray rocking curves. The optical properties of GeSiSn/Si MQD structures were studied by Fourier transform infrared (FTIR) photoluminescence spectroscopy. The structures exhibited photoluminescence peaks in the 0.6–0.8 eV range originating from the QD region. The calculations showed that the observed peaks correspond to the radiative transition between the Δ\u0000<sub>4</sub>\u0000 conduction band in Si and the energy level of heavy holes in the QDs. The peak positions in the PL spectra are in good correlation with the calculation results. It was demonstrated that the transition energy depends strongly on the composition and size of GeSiSn/Si QDs. The p-i-n photodiodes were developed based on the GeSiSn/Si MQD structures. The cutoff wavelength maximum reached the value of 2.65 μm for Ge\u0000<sub>0.80</sub>\u0000Si\u0000<sub>0.11</sub>\u0000Sn\u0000<sub>0.09</sub>\u0000/Si MQD p-i-n photodiodes.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141948744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-05DOI: 10.1109/JSTQE.2024.3438710
Leon Shterengas;Gela Kipshidze;Aaron Stein;Won Jae Lee;Ruyan Liu;Gregory Belenky
The GaSb-based epitaxially regrown monolithic diode PCSELs operating near 2 μm at room temperature in continuous wave regime and generating 30 mW of output power from 200 μm diameter aperture have been designed and fabricated. The devices demonstrated CW threshold current density of about 500 A/cm 2 . The laser output power was enhanced thanks to increased buried void area fill-factor in the photonic crystal layer with multiple voids per unit cell. The PCSEL generated ultra-low divergence donut shape beams at the currents near threshold. At higher injection currents, the device brightness was limited by excitation of the higher order lateral modes. Generation of the vector-vortex beams of different types by different band edge states of the buried photonic crystal was observed.
{"title":"Photonic Crystal Surface Emitting GaSb-Based Type-I Quantum Well Diode Lasers","authors":"Leon Shterengas;Gela Kipshidze;Aaron Stein;Won Jae Lee;Ruyan Liu;Gregory Belenky","doi":"10.1109/JSTQE.2024.3438710","DOIUrl":"10.1109/JSTQE.2024.3438710","url":null,"abstract":"The GaSb-based epitaxially regrown monolithic diode PCSELs operating near 2 μm at room temperature in continuous wave regime and generating 30 mW of output power from 200 μm diameter aperture have been designed and fabricated. The devices demonstrated CW threshold current density of about 500 A/cm\u0000<sup>2</sup>\u0000. The laser output power was enhanced thanks to increased buried void area fill-factor in the photonic crystal layer with multiple voids per unit cell. The PCSEL generated ultra-low divergence donut shape beams at the currents near threshold. At higher injection currents, the device brightness was limited by excitation of the higher order lateral modes. Generation of the vector-vortex beams of different types by different band edge states of the buried photonic crystal was observed.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141948741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-05DOI: 10.1109/JSTQE.2024.3438084
Shuqi Zhang;Jae Ha Ryu;Jeremy D. Kirch;Chris Sigler;Steven Ruder;Thomas Earles;Dan Botez;Luke J. Mawst
Surface emission from a resonant leaky-wave coupled phase-locked array of mid-infrared (IR) quantum cascade lasers (QCLs) employing a metal/semiconductor 2 nd -order distributed feedback (DFB) grating, placed in the array elements, is proposed and analyzed. A quasi-3D modal analysis is performed including lateral (i.e., array-mode) and longitudinal (i.e., DFB) directions to predict the threshold-current densities of the competing modes. The grating is found to improve the intermodal discrimination, ensuring single-spatial-mode operation to high surface-emitted output powers. A five-element, surface-emitting phase-locked QCL array with 2 nd -order Ag/semiconductor DFB gratings in the array-element regions was fabricated, and provides, at 4.6 μm wavelength, 1.22 W surface-emitted peak pulsed power. The device emits in a narrow two-dimensional beam, although it is not yet optimized for single-spatial-mode operation. Analysis indicates that further optimized devices employing DFB/DBR gratings placed in the array elements increases the array intermodal discrimination, and as a result creates a larger fabrication tolerance for the array interelement width. Specifically, grating designs which favor the anti-symmetric longitudinal mode are preferred to obtain higher discrimination against unwanted lateral array modes.
{"title":"2-D Grating-Coupled Surface Emission From Phase-Locked Mid-IR Quantum Cascade Laser Array","authors":"Shuqi Zhang;Jae Ha Ryu;Jeremy D. Kirch;Chris Sigler;Steven Ruder;Thomas Earles;Dan Botez;Luke J. Mawst","doi":"10.1109/JSTQE.2024.3438084","DOIUrl":"10.1109/JSTQE.2024.3438084","url":null,"abstract":"Surface emission from a resonant leaky-wave coupled phase-locked array of mid-infrared (IR) quantum cascade lasers (QCLs) employing a metal/semiconductor 2\u0000<sup>nd</sup>\u0000-order distributed feedback (DFB) grating, placed in the array elements, is proposed and analyzed. A quasi-3D modal analysis is performed including lateral (i.e., array-mode) and longitudinal (i.e., DFB) directions to predict the threshold-current densities of the competing modes. The grating is found to improve the intermodal discrimination, ensuring single-spatial-mode operation to high surface-emitted output powers. A five-element, surface-emitting phase-locked QCL array with 2\u0000<sup>nd</sup>\u0000-order Ag/semiconductor DFB gratings in the array-element regions was fabricated, and provides, at 4.6 μm wavelength, 1.22 W surface-emitted peak pulsed power. The device emits in a narrow two-dimensional beam, although it is not yet optimized for single-spatial-mode operation. Analysis indicates that further optimized devices employing DFB/DBR gratings placed in the array elements increases the array intermodal discrimination, and as a result creates a larger fabrication tolerance for the array interelement width. Specifically, grating designs which favor the anti-symmetric longitudinal mode are preferred to obtain higher discrimination against unwanted lateral array modes.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141969798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-02DOI: 10.1109/JSTQE.2024.3430929
Wei Zhang;Ryan A. Lane;Curtis R. Menyuk;Jonathan Hu
We carry out a computational study to evaluate the temperature reduction by using gas flow in hollow-core gas fiber lasers. We first use the Navier-Stokes equations to study the gas flow in the hollow-core fibers. We compare the density, pressure, and velocity using both an incompressible and a compressible gas model. We show that an incompressible gas model leads to large errors in the case that we study in this paper. We then present a coupled model to study gas flow and heat transfer simultaneously in hollow-core fibers using a compressible gas model. We found that a temperature reduction of about 20% can be achieved by using a differential pressure of 10 atm between the inlet and outlet of the hollow-core fibers. The results also demonstrate that the relative temperature reduction increases when the heat power decreases, the fiber length decreases, and the heat profile is more localized.
{"title":"Modeling Heat Mitigation in Hollow-Core Gas Fiber Lasers With Gas Flow","authors":"Wei Zhang;Ryan A. Lane;Curtis R. Menyuk;Jonathan Hu","doi":"10.1109/JSTQE.2024.3430929","DOIUrl":"10.1109/JSTQE.2024.3430929","url":null,"abstract":"We carry out a computational study to evaluate the temperature reduction by using gas flow in hollow-core gas fiber lasers. We first use the Navier-Stokes equations to study the gas flow in the hollow-core fibers. We compare the density, pressure, and velocity using both an incompressible and a compressible gas model. We show that an incompressible gas model leads to large errors in the case that we study in this paper. We then present a coupled model to study gas flow and heat transfer simultaneously in hollow-core fibers using a compressible gas model. We found that a temperature reduction of about 20% can be achieved by using a differential pressure of 10 atm between the inlet and outlet of the hollow-core fibers. The results also demonstrate that the relative temperature reduction increases when the heat power decreases, the fiber length decreases, and the heat profile is more localized.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10621710","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141883753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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