Pub Date : 2024-07-19DOI: 10.1109/JSTQE.2024.3431225
Felix Mauerhoff;Philipp Hildenstein;André Maaßdorf;David Feise;Nils Werner;Johannes Glaab;Gunnar Blume;Katrin Paschke
GaAs-based semiconductor lasers with emission wavelengths around 626 nm, 725 nm and 1180 nm are challenging due to the necessary strain in the quantum well region. However, there is a lively interest worldwide in tapping into these wavelength ranges with semiconductor lasers. Here we describe the fabrication and properties of both broad area and ridge waveguide semiconductor lasers emitting at 626 nm, 725 nm and 1180 nm. For that, GaAs-based laser structures with highly strained quantum wells have been developed.
{"title":"GaAs Based Edge Emitters at 626 nm, 725 nm and 1180 nm","authors":"Felix Mauerhoff;Philipp Hildenstein;André Maaßdorf;David Feise;Nils Werner;Johannes Glaab;Gunnar Blume;Katrin Paschke","doi":"10.1109/JSTQE.2024.3431225","DOIUrl":"10.1109/JSTQE.2024.3431225","url":null,"abstract":"GaAs-based semiconductor lasers with emission wavelengths around 626 nm, 725 nm and 1180 nm are challenging due to the necessary strain in the quantum well region. However, there is a lively interest worldwide in tapping into these wavelength ranges with semiconductor lasers. Here we describe the fabrication and properties of both broad area and ridge waveguide semiconductor lasers emitting at 626 nm, 725 nm and 1180 nm. For that, GaAs-based laser structures with highly strained quantum wells have been developed.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141740514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To realize high-power GaInAsP/InP pump lasers for Raman amplifiers, we propose a laser with a GaInAsP/InP electric field control layer that has high design freedom and is suitable for mass production. This laser structure realizes high power and low power consumption of Raman pump lasers with fiber output power exceeding 1 W at high temperature operation of 35 °C, and extremely low power consumption of 3.7 W at 55 °C with 0.5 W fiber output power is demonstrated. We also demonstrate that this laser structure is effective in achieving high-power fiber output power exceeding 0.78 W at 35 °C in the range from 1395 nm to 1547 nm for the application of broadband Raman amplification, which is a key technology for ultra-high-speed large-capacity optical transmission systems using digital coherent systems.
{"title":"High Power and Low Power Consumption Raman Pump Lasers With Electric Field Control Layer for Wide-Bands Raman Amplification","authors":"Junji Yoshida;Naoya Hojo;Masaki Wakaba;Masayoshi Seki;Keiji Sakaguchi;Motoyuki Tanaka;Shun Kamada;Takuya Kokawa;Yusuke Isozaki;Akihiko Kasukawa","doi":"10.1109/JSTQE.2024.3430223","DOIUrl":"10.1109/JSTQE.2024.3430223","url":null,"abstract":"To realize high-power GaInAsP/InP pump lasers for Raman amplifiers, we propose a laser with a GaInAsP/InP electric field control layer that has high design freedom and is suitable for mass production. This laser structure realizes high power and low power consumption of Raman pump lasers with fiber output power exceeding 1 W at high temperature operation of 35 °C, and extremely low power consumption of 3.7 W at 55 °C with 0.5 W fiber output power is demonstrated. We also demonstrate that this laser structure is effective in achieving high-power fiber output power exceeding 0.78 W at 35 °C in the range from 1395 nm to 1547 nm for the application of broadband Raman amplification, which is a key technology for ultra-high-speed large-capacity optical transmission systems using digital coherent systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141740515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.1109/JSTQE.2024.3430214
Virat Tara;Rui Chen;Johannes E. Fröch;Zhuoran Fang;Jie Fang;Romil Audhkhasi;Minho Choi;Arka Majumdar
Reconfigurable free-space metasurfaces with subwavelength-scale tunable nano-scatterers can manipulate light for many applications ranging from bio-medical imaging, light detection and ranging to optical computing. Several endeavors have been made to achieve tunable metasurfaces using thermo-optic, electro-optic effects, liquid crystals, and phase change materials (PCMs). PCMs stand out, particularly for low-tuning frequency and low-power consumption applications, thanks to their non-volatile nature and drastic index modulation, leading to zero-static power and a small footprint. Antimony sulfide (Sb 2 S 3 ) is an emerging low-loss PCM with the widest bandgap reported so far, enabling operation at low wavelengths down to ∼600 nm in the visible spectrum. In addition, Sb 2 S 3 has slow crystallization speed, which enables amorphization of large-volume Sb 2 S 3 without unintentional recrystallization. This makes Sb 2 S 3 suitable for application in reconfigurable metasurfaces, where the switching area (usually > hundreds of μm 2 ) is significantly larger than photonic integrated circuits (tens of μm 2 ). Herein, we experimentally demonstrate an electrically tunable notch filter at a wavelength of ∼1150 nm on a Sb 2 S 3 -cladded silicon-on-sapphire platform. The notch filter is enabled by a 2-dimensional symmetry-protected quasi-bound-state-in-the-continuum (quasi-BIC) metasurface. We experimentally observed a quality factor of up to ∼200 and demonstrated reversible tuning of a record large volume (4.5 μm 3 ) of Sb 2 S 3 . Thanks to the large modulation provided by Sb 2 S 3 , we observed a resonance shift as high as ∼4 nm in situ using a doped silicon microheater. Our work paves the way for compact and low-power nonvolatile notch filters. Moreover, due to the low loss of Sb 2 S 3 in the visible, this work also lays the foundation for phase-only modulation in the visible using PCMs.
{"title":"Non-Volatile Reconfigurable Transmissive Notch Filter Using Wide Bandgap Phase Change Material Antimony Sulfide","authors":"Virat Tara;Rui Chen;Johannes E. Fröch;Zhuoran Fang;Jie Fang;Romil Audhkhasi;Minho Choi;Arka Majumdar","doi":"10.1109/JSTQE.2024.3430214","DOIUrl":"10.1109/JSTQE.2024.3430214","url":null,"abstract":"Reconfigurable free-space metasurfaces with subwavelength-scale tunable nano-scatterers can manipulate light for many applications ranging from bio-medical imaging, light detection and ranging to optical computing. Several endeavors have been made to achieve tunable metasurfaces using thermo-optic, electro-optic effects, liquid crystals, and phase change materials (PCMs). PCMs stand out, particularly for low-tuning frequency and low-power consumption applications, thanks to their non-volatile nature and drastic index modulation, leading to zero-static power and a small footprint. Antimony sulfide (Sb\u0000<sub>2</sub>\u0000S\u0000<sub>3</sub>\u0000) is an emerging low-loss PCM with the widest bandgap reported so far, enabling operation at low wavelengths down to ∼600 nm in the visible spectrum. In addition, Sb\u0000<sub>2</sub>\u0000S\u0000<sub>3</sub>\u0000 has slow crystallization speed, which enables amorphization of large-volume Sb\u0000<sub>2</sub>\u0000S\u0000<sub>3</sub>\u0000 without unintentional recrystallization. This makes Sb\u0000<sub>2</sub>\u0000S\u0000<sub>3</sub>\u0000 suitable for application in reconfigurable metasurfaces, where the switching area (usually > hundreds of μm\u0000<sup>2</sup>\u0000) is significantly larger than photonic integrated circuits (tens of μm\u0000<sup>2</sup>\u0000). Herein, we experimentally demonstrate an electrically tunable notch filter at a wavelength of ∼1150 nm on a Sb\u0000<sub>2</sub>\u0000S\u0000<sub>3</sub>\u0000-cladded silicon-on-sapphire platform. The notch filter is enabled by a 2-dimensional symmetry-protected quasi-bound-state-in-the-continuum (quasi-BIC) metasurface. We experimentally observed a quality factor of up to ∼200 and demonstrated reversible tuning of a record large volume (4.5 μm\u0000<sup>3</sup>\u0000) of Sb\u0000<sub>2</sub>\u0000S\u0000<sub>3</sub>\u0000. Thanks to the large modulation provided by Sb\u0000<sub>2</sub>\u0000S\u0000<sub>3</sub>\u0000, we observed a resonance shift as high as ∼4 nm in situ using a doped silicon microheater. Our work paves the way for compact and low-power nonvolatile notch filters. Moreover, due to the low loss of Sb\u0000<sub>2</sub>\u0000S\u0000<sub>3</sub>\u0000 in the visible, this work also lays the foundation for phase-only modulation in the visible using PCMs.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141740518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Owing to its true direct bandgap and tunable bandgap energies, GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser operating at room temperature under pulsed excitation and at cryogenic temperature under continuous-wave excitation show great promise of GeSn lasers to be efficient electrically injected light sources on Si. Here we report electrically injected GeSn lasers using Fabry-Perot cavity with 20 μm, 40 μm, and 80 μm ridge widths. A lasing threshold of 0.756 kA/cm 2 at 77 K, emitting wavelength of 2722 nm, and maximum operating temperature of 140 K were obtained. The lower threshold current density compared to previous works was achieved by reducing optical loss and improving the optical confinement. The peak power was measured as 2.2 mW/facet at 77 K.
{"title":"Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K","authors":"Sudip Acharya;Hryhorii Stanchu;Rajesh Kumar;Solomon Ojo;Murtadha Alher;Mourad Benamara;Guo-En Chang;Baohua Li;Wei Du;Shui-Qing Yu","doi":"10.1109/JSTQE.2024.3430060","DOIUrl":"10.1109/JSTQE.2024.3430060","url":null,"abstract":"Owing to its true direct bandgap and tunable bandgap energies, GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser operating at room temperature under pulsed excitation and at cryogenic temperature under continuous-wave excitation show great promise of GeSn lasers to be efficient electrically injected light sources on Si. Here we report electrically injected GeSn lasers using Fabry-Perot cavity with 20 μm, 40 μm, and 80 μm ridge widths. A lasing threshold of 0.756 kA/cm\u0000<sup>2</sup>\u0000 at 77 K, emitting wavelength of 2722 nm, and maximum operating temperature of 140 K were obtained. The lower threshold current density compared to previous works was achieved by reducing optical loss and improving the optical confinement. The peak power was measured as 2.2 mW/facet at 77 K.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141740517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-17DOI: 10.1109/JSTQE.2024.3430050
Michele Zenari;Mariangela Gioannini;Matteo Buffolo;Alberto Tibaldi;Carlo De Santi;Justin Norman;Chen Shang;Mario Dumont;John E. Bowers;Robert W. Herrick;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini
For the first time, we analyze the optical degradation of 1.3 μm InAs quantum dot laser diodes (QD LDs) epitaxially grown on silicon as a function of the number of dot-in-a-well layers (DWELLs). To this aim, we tested the reliability of two kinds of devices differing only in the number of DWELLs in the active region: QD LDs with three vs. five quantum dot layers (3 vs. 5 QDLs). To induce degradation, we submitted the devices to highly accelerated stress tests: in the current step stress, we tested the degradation of the devices as a function of the stress current, whereas with a constant current stress, we evaluated the degradation as a function of the stress time. Both experiments confirmed that the device with more QDLs (5×QDLs) has better reliability than the structure with a lower number of DWELLs (3×QLDs), while exhibiting the very same degradation modes. We hypothesize that a higher number of active layers favors the redistribution of carriers across the active layers, lowering carrier density and therefore non-radiative recombination rates. This is beneficial in terms of reliability, as the non-radiative recombination lowers the radiative efficiency of the laser and, in turn, can enhance degradation via recombination-enhanced defect reaction (REDR). To support our assumption, we employed a quantum-corrected Poisson-drift-diffusion simulation tool to evaluate the carrier distribution and the Shockley-Read-Hall (SRH) recombination rate within the active region. The simulation results confirmed that the device with five QDLs has a lower carrier concentration per DWELLs and, therefore, a lower SRH recombination rate per active layer, thus resulting in a lower degradation rate.
{"title":"Degradation of 1.3 μm Quantum Dot Laser Diodes for Silicon Photonics: Dependence on the Number of Dot-in-a-Well Layers","authors":"Michele Zenari;Mariangela Gioannini;Matteo Buffolo;Alberto Tibaldi;Carlo De Santi;Justin Norman;Chen Shang;Mario Dumont;John E. Bowers;Robert W. Herrick;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini","doi":"10.1109/JSTQE.2024.3430050","DOIUrl":"10.1109/JSTQE.2024.3430050","url":null,"abstract":"For the first time, we analyze the optical degradation of 1.3 μm InAs quantum dot laser diodes (QD LDs) epitaxially grown on silicon as a function of the number of dot-in-a-well layers (DWELLs). To this aim, we tested the reliability of two kinds of devices differing only in the number of DWELLs in the active region: QD LDs with three vs. five quantum dot layers (3 vs. 5 QDLs). To induce degradation, we submitted the devices to highly accelerated stress tests: in the current step stress, we tested the degradation of the devices as a function of the stress current, whereas with a constant current stress, we evaluated the degradation as a function of the stress time. Both experiments confirmed that the device with more QDLs (5×QDLs) has better reliability than the structure with a lower number of DWELLs (3×QLDs), while exhibiting the very same degradation modes. We hypothesize that a higher number of active layers favors the redistribution of carriers across the active layers, lowering carrier density and therefore non-radiative recombination rates. This is beneficial in terms of reliability, as the non-radiative recombination lowers the radiative efficiency of the laser and, in turn, can enhance degradation via recombination-enhanced defect reaction (REDR). To support our assumption, we employed a quantum-corrected Poisson-drift-diffusion simulation tool to evaluate the carrier distribution and the Shockley-Read-Hall (SRH) recombination rate within the active region. The simulation results confirmed that the device with five QDLs has a lower carrier concentration per DWELLs and, therefore, a lower SRH recombination rate per active layer, thus resulting in a lower degradation rate.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10601191","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141740519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-16DOI: 10.1109/JSTQE.2024.3429414
Diao Li;Mohsen Ahmadi;Qiang Zhang;Peng Liu;Zhenyu Xu;Nan Wei;Esko I. Kauppinen;Zhipei Sun
Electro-optical modulators are critical elements in the rapidly developing data communication, optical interconnects, silicon-based photonic systems and terahertz technologies. The limited optoelectronic properties and complicated material growth in traditional semiconductors hinder the rapidly surging demand for modulator performance, energy efficiency, cost, etc. The emergence of two-dimensional materials and one-dimensional carbon nanotubes in recent decades has brought new opportunities with their tremendous selection degree of freedom for exceptional optoelectronic properties. In this article, we present ultra-broadband and electro-optical tunable absorption modulators by employing double-walled carbon nanotube films in a capacitor geometry, spanning the visible to terahertz spectra. The formation of supercapacitors around the ionic gel electrolyte and carbon nanotube film interfaces accounts for the large carrier transition and optical conductivity change, which behaves a thickness dependent electroabsorption dynamics. Our findings not only broaden the understanding of low-dimensional material applications in electro-optics but also pave the way for future developments in high-performance broadband modulators.
{"title":"Ultra-Broadband and Electro-Optical Tunable Absorption in Double-Walled Carbon Nanotubes","authors":"Diao Li;Mohsen Ahmadi;Qiang Zhang;Peng Liu;Zhenyu Xu;Nan Wei;Esko I. Kauppinen;Zhipei Sun","doi":"10.1109/JSTQE.2024.3429414","DOIUrl":"10.1109/JSTQE.2024.3429414","url":null,"abstract":"Electro-optical modulators are critical elements in the rapidly developing data communication, optical interconnects, silicon-based photonic systems and terahertz technologies. The limited optoelectronic properties and complicated material growth in traditional semiconductors hinder the rapidly surging demand for modulator performance, energy efficiency, cost, etc. The emergence of two-dimensional materials and one-dimensional carbon nanotubes in recent decades has brought new opportunities with their tremendous selection degree of freedom for exceptional optoelectronic properties. In this article, we present ultra-broadband and electro-optical tunable absorption modulators by employing double-walled carbon nanotube films in a capacitor geometry, spanning the visible to terahertz spectra. The formation of supercapacitors around the ionic gel electrolyte and carbon nanotube film interfaces accounts for the large carrier transition and optical conductivity change, which behaves a thickness dependent electroabsorption dynamics. Our findings not only broaden the understanding of low-dimensional material applications in electro-optics but also pave the way for future developments in high-performance broadband modulators.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141718318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-15DOI: 10.1109/jstqe.2024.3427770
Lianping Hou, Bocheng Yuan, Yizhe Fan, Xiao Sun, Yiming Sun, Simeng Zhu, Stephen J. Sweeney, John H. Marsh
{"title":"Monolithic Dual Wavelength DFB Lasers Based on Sidewall Gratings for THz/MMW Signal Generation","authors":"Lianping Hou, Bocheng Yuan, Yizhe Fan, Xiao Sun, Yiming Sun, Simeng Zhu, Stephen J. Sweeney, John H. Marsh","doi":"10.1109/jstqe.2024.3427770","DOIUrl":"https://doi.org/10.1109/jstqe.2024.3427770","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"1 1","pages":""},"PeriodicalIF":4.9,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141722132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.1109/JSTQE.2024.3425456
Tzu-Chien Hsueh;Yeshaiahu Fainman;Bill Lin
This paper adopts advanced monolithic silicon-photonics integrated-circuits manufacturing capabilities to realize system-on-chip photonic-electronic linear-algebra accelerators for self-attention computation in various applications of deep-learning neural networks and Large Language Models. With the features of holistic co-design approaches, optical comb-based broadband modulations, and consecutive matrix-multiplication architecture, the system/circuit/device-level simulations of the proposed accelerator can achieve 2.14-TMAC/s/mm 2 computation density and 27.9-fJ/MAC energy efficiency with practical considerations of power/area overhead due to photonic-electronic on-chip conversions, integrations, and calibrations.
{"title":"Optical Comb-Based Monolithic Photonic-Electronic Accelerators for Self-Attention Computation","authors":"Tzu-Chien Hsueh;Yeshaiahu Fainman;Bill Lin","doi":"10.1109/JSTQE.2024.3425456","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3425456","url":null,"abstract":"This paper adopts advanced monolithic silicon-photonics integrated-circuits manufacturing capabilities to realize system-on-chip photonic-electronic linear-algebra accelerators for self-attention computation in various applications of deep-learning neural networks and Large Language Models. With the features of holistic co-design approaches, optical comb-based broadband modulations, and consecutive matrix-multiplication architecture, the system/circuit/device-level simulations of the proposed accelerator can achieve 2.14-TMAC/s/mm\u0000<sup>2</sup>\u0000 computation density and 27.9-fJ/MAC energy efficiency with practical considerations of power/area overhead due to photonic-electronic on-chip conversions, integrations, and calibrations.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"1-17"},"PeriodicalIF":4.3,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141966240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-05DOI: 10.1109/JSTQE.2024.3423774
Ziqi Wei;Zhaoyu Cai;Daewon Suk;Changxi Yang;Hansuek Lee;Chengying Bao
Microsonator-based photonic microwave oscillators can deliver ultralow phase noise with a compact form factor and a low power consumption. Here, we report on a low noise microwave oscillator at 10 GHz using a chip-based silica wedge soliton microcomb. By operating in a quiet point, the phase noise at the offset frequency of 100 kHz (10 kHz) can reach −143 dBc/Hz (−132 dBc/Hz). By measuring the phase noise under different amplified microcomb powers, we find that the phase noise at the offset frequencies above 1 MHz are limited by the photodetector, instead of shot noise. The phase noise for low offset frequencies is suppressed by injection locking to a high quality commercial electric oscillator. When locked, the soliton microcomb oscillator can purify the electric oscillator more than 10 dB at the offset frequency of hundreds of kHz. Different from previous results in a MgF $_{2}$ microcavity, no deterioration of the phase noise at high offset frequencies due to injection locking is observed. The injection locking is relatively loose for the silica mcirocomb operating in the quiet point, with phase noise reduction only observed below an offset frequency of kHz. Our measurements show how the injection locking impacts the low noise silica soliton oscillators.
{"title":"Injection Locked Low Noise Chip-Based Silica Soliton Microwave Oscillator","authors":"Ziqi Wei;Zhaoyu Cai;Daewon Suk;Changxi Yang;Hansuek Lee;Chengying Bao","doi":"10.1109/JSTQE.2024.3423774","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3423774","url":null,"abstract":"Microsonator-based photonic microwave oscillators can deliver ultralow phase noise with a compact form factor and a low power consumption. Here, we report on a low noise microwave oscillator at 10 GHz using a chip-based silica wedge soliton microcomb. By operating in a quiet point, the phase noise at the offset frequency of 100 kHz (10 kHz) can reach −143 dBc/Hz (−132 dBc/Hz). By measuring the phase noise under different amplified microcomb powers, we find that the phase noise at the offset frequencies above 1 MHz are limited by the photodetector, instead of shot noise. The phase noise for low offset frequencies is suppressed by injection locking to a high quality commercial electric oscillator. When locked, the soliton microcomb oscillator can purify the electric oscillator more than 10 dB at the offset frequency of hundreds of kHz. Different from previous results in a MgF\u0000<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>\u0000 microcavity, no deterioration of the phase noise at high offset frequencies due to injection locking is observed. The injection locking is relatively loose for the silica mcirocomb operating in the quiet point, with phase noise reduction only observed below an offset frequency of kHz. Our measurements show how the injection locking impacts the low noise silica soliton oscillators.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141964709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper reports on the fabrication and performance of a fiber bundle with seven hollow cores arranged in a hexagonal pattern. The bundle shows individual core transmission with less than 0.07% core-to-core coupling over a length of 11 cm. Each core exhibits several transmission windows in the visible to near infrared region. These low attenuation regions with large higher order mode suppression are a result of anti-resonant guidance due to the negative curvature membranes encircling the cores. The central core exhibits the widest transmission window with a minimum loss of 4 dB/m between 1250 nm and 1450 nm. The lowest loss for the central core is estimated to be 2.5 dB/m at 600 nm. Such hollow core fiber bundles may be employed in applications including communication, imaging systems, high power laser delivery, or sensing.
{"title":"Light Transmission Through a Hollow Core Fiber Bundle","authors":"Md Abu Sufian;Erwan Baleine;Jeffrey Geldmeier;Ameen Alhalemi;Jose Enrique Antonio-Lopez;Rodrigo Amezcua Correa;Axel Schülzgen","doi":"10.1109/JSTQE.2024.3420885","DOIUrl":"10.1109/JSTQE.2024.3420885","url":null,"abstract":"This paper reports on the fabrication and performance of a fiber bundle with seven hollow cores arranged in a hexagonal pattern. The bundle shows individual core transmission with less than 0.07% core-to-core coupling over a length of 11 cm. Each core exhibits several transmission windows in the visible to near infrared region. These low attenuation regions with large higher order mode suppression are a result of anti-resonant guidance due to the negative curvature membranes encircling the cores. The central core exhibits the widest transmission window with a minimum loss of 4 dB/m between 1250 nm and 1450 nm. The lowest loss for the central core is estimated to be 2.5 dB/m at 600 nm. Such hollow core fiber bundles may be employed in applications including communication, imaging systems, high power laser delivery, or sensing.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10578311","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141505829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：