Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516870
N. Bushyager, M. Tentzeris
This paper presents techniques that can be used with the Haar MRTD method for time and space adaptive gridding. For the first time, absolute and relative thresholds for wavelet functions are used to change the resolution as a function of time and space. This technique is applied to the composite cell Haar MRTD scheme, which is capable of representing multiple conductors (and other subcell elements) per cell. Using this technique, complex structures can be represented more efficiently than with fixed grid techniques. Included is a comparison of the Haar method with FDTD, as well as the advantages of the Haar time-space adaptive method (10-40% economy in memory and execution time) with fixed grid FDTD and MRTD techniques. A dual patch antenna structure suitable for RF front ends in modern multilayer substrates is presented, the final version will also include an LC CPW structure suitable for metamaterial applications.
{"title":"Haar-MRTD time and space adaptive grid techniques for practical RF structures","authors":"N. Bushyager, M. Tentzeris","doi":"10.1109/MWSYM.2005.1516870","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516870","url":null,"abstract":"This paper presents techniques that can be used with the Haar MRTD method for time and space adaptive gridding. For the first time, absolute and relative thresholds for wavelet functions are used to change the resolution as a function of time and space. This technique is applied to the composite cell Haar MRTD scheme, which is capable of representing multiple conductors (and other subcell elements) per cell. Using this technique, complex structures can be represented more efficiently than with fixed grid techniques. Included is a comparison of the Haar method with FDTD, as well as the advantages of the Haar time-space adaptive method (10-40% economy in memory and execution time) with fixed grid FDTD and MRTD techniques. A dual patch antenna structure suitable for RF front ends in modern multilayer substrates is presented, the final version will also include an LC CPW structure suitable for metamaterial applications.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"43 1","pages":"1123-1126"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87027880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517161
L. Robin, M. Regis, H. Cam, A. Pérennec, D. Hervé, D. Le Berre, A. Péden, S. Yaegassi, H. Yano, S. Furudate
The bandwidth required by the amplifiers used for the 40 Gbits/sec photonic communication systems are linked to the actual data rate required and to the modulation used: over 50 GHz bandwidth may be required in certain cases. This paper presents the design of a completely integrated distributed amplifier for high data rate type of applications. Thanks to the use a special DC bias circuit, the amplifier just requires one negative voltage (-5 V) supply. As no decoupling capacitor is used to bias the active cells, the amplifier has no low cutoff frequency. The amplifier gain is 15 dB and its 3 dB cutoff frequency bandwidth 65 GHz, which gives an equivalent gain bandwidth product of 390 GHz. This is at the state of the art for the technology used. The simulation of the electromagnetic extraction of the layout is compared to the measurements results from DC to 50 GHz.
{"title":"Fully integrated distributed amplifier design on InP HBT technology for optoelectronics application","authors":"L. Robin, M. Regis, H. Cam, A. Pérennec, D. Hervé, D. Le Berre, A. Péden, S. Yaegassi, H. Yano, S. Furudate","doi":"10.1109/MWSYM.2005.1517161","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517161","url":null,"abstract":"The bandwidth required by the amplifiers used for the 40 Gbits/sec photonic communication systems are linked to the actual data rate required and to the modulation used: over 50 GHz bandwidth may be required in certain cases. This paper presents the design of a completely integrated distributed amplifier for high data rate type of applications. Thanks to the use a special DC bias circuit, the amplifier just requires one negative voltage (-5 V) supply. As no decoupling capacitor is used to bias the active cells, the amplifier has no low cutoff frequency. The amplifier gain is 15 dB and its 3 dB cutoff frequency bandwidth 65 GHz, which gives an equivalent gain bandwidth product of 390 GHz. This is at the state of the art for the technology used. The simulation of the electromagnetic extraction of the layout is compared to the measurements results from DC to 50 GHz.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"2 1","pages":"4 pp.-"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91027009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516903
J. Yamasaki, I. Ohta, T. Kawai, Y. Kokubo
Band-broadening techniques for semi-lumped and lumped element quadrature 3 dB hybrids are described. A semi-lumped hybrid is spiral-inductor-free, and the occupied area is about 1/150 compared with a distributed-element one at 1 GHz band. In lumped-element version, two kinds of matching networks are dealt with; one consists of an admittance inverter and a parallel tuned circuit, and the other makes good use of a series one. The former is marked by lower inductance values and the latter by less devise count and wider bandwidth. The frac- tional bandwidths of the designed hybrids are 20-27% for return loss better than 20 dB and amplitude balance tolerance 0.18 dB. Index Terms — directional couplers, lumped element micro- wave circuits, microwave integrated circuits, passive circuits.
{"title":"Design of broadband semi-lumped and lumped element quadrature hybrids","authors":"J. Yamasaki, I. Ohta, T. Kawai, Y. Kokubo","doi":"10.1109/MWSYM.2005.1516903","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516903","url":null,"abstract":"Band-broadening techniques for semi-lumped and lumped element quadrature 3 dB hybrids are described. A semi-lumped hybrid is spiral-inductor-free, and the occupied area is about 1/150 compared with a distributed-element one at 1 GHz band. In lumped-element version, two kinds of matching networks are dealt with; one consists of an admittance inverter and a parallel tuned circuit, and the other makes good use of a series one. The former is marked by lower inductance values and the latter by less devise count and wider bandwidth. The frac- tional bandwidths of the designed hybrids are 20-27% for return loss better than 20 dB and amplitude balance tolerance 0.18 dB. Index Terms — directional couplers, lumped element micro- wave circuits, microwave integrated circuits, passive circuits.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"16 1","pages":"1247-1250"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89818989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516692
Haitao Zhang, Huai Gao, Guann-Pyng Li
In this paper, an InGaP/GaAs HBT broadband power amplifier with a novel tunable output matching circuit is first proposed and implemented. The 3-stage broadband power amplifier is realized by using the compensating matching technique and optimizing the distribution of power gain among stages. The output matching circuit is implemented with parallel L/spl I.bar/C tank circuits using PIN diodes to control the inductor value. This broadband amplifier module offers the advantage of fewer components, less power insertion loss, small size and high linearity. The broadband power amplifier module demonstrates 28 dB power gain, 30 dBm output power and higher than 30% power added efficiency (PAE) at frequencies covering dual bands from 0.85 GHz to 0.95 GHz and from 1.71 GHz to 1.95 GHz, which can be used in the GSM, DCS, PCS and CDMA systems.
{"title":"A novel tunable broadband power amplifier module operating from 0.8 GHz to 2.0 GHz","authors":"Haitao Zhang, Huai Gao, Guann-Pyng Li","doi":"10.1109/MWSYM.2005.1516692","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516692","url":null,"abstract":"In this paper, an InGaP/GaAs HBT broadband power amplifier with a novel tunable output matching circuit is first proposed and implemented. The 3-stage broadband power amplifier is realized by using the compensating matching technique and optimizing the distribution of power gain among stages. The output matching circuit is implemented with parallel L/spl I.bar/C tank circuits using PIN diodes to control the inductor value. This broadband amplifier module offers the advantage of fewer components, less power insertion loss, small size and high linearity. The broadband power amplifier module demonstrates 28 dB power gain, 30 dBm output power and higher than 30% power added efficiency (PAE) at frequencies covering dual bands from 0.85 GHz to 0.95 GHz and from 1.71 GHz to 1.95 GHz, which can be used in the GSM, DCS, PCS and CDMA systems.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"53 1","pages":"4 pp.-664"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90813614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516705
Dae-Hee Weon, Jeong-Il Kim, Jong-Hyeok Jeon, S. Mohammadi, L. Katehi
Using a combination of micromachining and three-dimensional (3-D) processing technologies, we have designed, fabricated, and tested inductors on CMOS grade Si substrate (10/spl sim/20 /spl Omega/-cm resistivity) which exhibit very high quality factor and high resonant frequency. A 1.2 nH inductor in this process achieves a record high quality factor of /spl sim/140 at 12GHz, with Q > 100 for frequencies between 8 to 20GHz. The technology to fabricate these inductors is based on one step deposition and electroplating of a stressed layered metal combination of Cr and Au and is fully compatible with CMOS technology.
{"title":"High performance micro-machined inductors on CMOS substrate","authors":"Dae-Hee Weon, Jeong-Il Kim, Jong-Hyeok Jeon, S. Mohammadi, L. Katehi","doi":"10.1109/MWSYM.2005.1516705","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516705","url":null,"abstract":"Using a combination of micromachining and three-dimensional (3-D) processing technologies, we have designed, fabricated, and tested inductors on CMOS grade Si substrate (10/spl sim/20 /spl Omega/-cm resistivity) which exhibit very high quality factor and high resonant frequency. A 1.2 nH inductor in this process achieves a record high quality factor of /spl sim/140 at 12GHz, with Q > 100 for frequencies between 8 to 20GHz. The technology to fabricate these inductors is based on one step deposition and electroplating of a stressed layered metal combination of Cr and Au and is fully compatible with CMOS technology.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"11 1","pages":"4 pp.-704"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90873109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516954
A. Jarndal, G. Kompa
A new parasitic elements extraction method applied to GaN devices is presented. First, using cold S-parameter measurements, high quality starting values for the extrinsic parameters are generated that would place the extraction close to the global minimum of the objective function for the distributed equivalent circuit model. In a second step, the optimal model parameter values are searched through optimization using the starting values already obtained. The validity of the developed method and the proposed small-signal model is verified by comparing the simulated wide-band small-signal S-parameter, over a wide bias range, with measured data of a 0.5 /spl mu/m GaN HEMT with 2 /spl times/ 50 /spl mu/m gate width.
{"title":"A new small signal model parameter extraction method applied to GaN devices","authors":"A. Jarndal, G. Kompa","doi":"10.1109/MWSYM.2005.1516954","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516954","url":null,"abstract":"A new parasitic elements extraction method applied to GaN devices is presented. First, using cold S-parameter measurements, high quality starting values for the extrinsic parameters are generated that would place the extraction close to the global minimum of the objective function for the distributed equivalent circuit model. In a second step, the optimal model parameter values are searched through optimization using the starting values already obtained. The validity of the developed method and the proposed small-signal model is verified by comparing the simulated wide-band small-signal S-parameter, over a wide bias range, with measured data of a 0.5 /spl mu/m GaN HEMT with 2 /spl times/ 50 /spl mu/m gate width.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"1 1","pages":"4 pp.-"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89582344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517121
Hongjoon Kim, A. Kozyrev, Sung-un Ho, D. W. van der Weide
We propose an arbitrary waveform generator based on Fourier synthesis from left-handed (LH) transmission lines. Cascaded varactors and shunt inductors are used to construct the LH transmission line, which can be used as an efficient harmonic generator when driven with a large signal, and as a linear phase shifter when driven with a small signal. By controlling the amplitude and phase of each harmonic, and combining them together, we can generate pulses of arbitrary waveforms.
{"title":"Fourier synthesizer using left-handed transmission lines","authors":"Hongjoon Kim, A. Kozyrev, Sung-un Ho, D. W. van der Weide","doi":"10.1109/MWSYM.2005.1517121","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517121","url":null,"abstract":"We propose an arbitrary waveform generator based on Fourier synthesis from left-handed (LH) transmission lines. Cascaded varactors and shunt inductors are used to construct the LH transmission line, which can be used as an efficient harmonic generator when driven with a large signal, and as a linear phase shifter when driven with a small signal. By controlling the amplitude and phase of each harmonic, and combining them together, we can generate pulses of arbitrary waveforms.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"299 1","pages":"4 pp.-"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90319137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516880
C. Wei, A. Klimashov, Y. Zhu, E. Lawrence, G. Tkachenko
In this paper, we present a comprehensive large-signal PHEMT switch model and address critical switch modeling issues. Reciprocity, dispersion, leakages, and sub-pinchoff, and charge conservation all play important role in generating a realistic large-signal switch model. Device nonlinearities covering linear, saturation, sub-pinchoff and deep pinchoff regions are taken into account in the model. The model has been verified by comparing simulated dc characteristics, S-parameters and power harmonics performance of switch devices with measured results. The model also successfully predicts harmonics, two-tone IP3 and cross-modulation in various switch circuits.
{"title":"Large-signal PHEMT switch model, which accurately predicts harmonics and two-tone inter-modulation distortion","authors":"C. Wei, A. Klimashov, Y. Zhu, E. Lawrence, G. Tkachenko","doi":"10.1109/MWSYM.2005.1516880","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516880","url":null,"abstract":"In this paper, we present a comprehensive large-signal PHEMT switch model and address critical switch modeling issues. Reciprocity, dispersion, leakages, and sub-pinchoff, and charge conservation all play important role in generating a realistic large-signal switch model. Device nonlinearities covering linear, saturation, sub-pinchoff and deep pinchoff regions are taken into account in the model. The model has been verified by comparing simulated dc characteristics, S-parameters and power harmonics performance of switch devices with measured results. The model also successfully predicts harmonics, two-tone IP3 and cross-modulation in various switch circuits.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"100 1","pages":"1155-1158"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90647350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516642
N. Adachi, Y. Tateno, S. Mizuno, A. Kawano, J. Nikaido, S. Sano
We investigated high temperature operation of AlGaN/GaN HEMTs. At channel temperature of 269 degC, a linear gain of 12.3 dB and a power added efficiency of 53.6% were achieved at 2.14 GHz, less than 50 V operations. These are sufficient performance to practical application. At channel temperature of 368 degC, the linear gain was 10.4 dB and a power added efficiency of 43.9% was achieved. We also investigated the temperature dependence of equivalent circuit values, and found that the temperature dependence of saturated output power and the linear gain is originated from the temperature dependence of electron velocity in the channel.
{"title":"High temperature operation of AlGaN/GaN HEMT","authors":"N. Adachi, Y. Tateno, S. Mizuno, A. Kawano, J. Nikaido, S. Sano","doi":"10.1109/MWSYM.2005.1516642","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516642","url":null,"abstract":"We investigated high temperature operation of AlGaN/GaN HEMTs. At channel temperature of 269 degC, a linear gain of 12.3 dB and a power added efficiency of 53.6% were achieved at 2.14 GHz, less than 50 V operations. These are sufficient performance to practical application. At channel temperature of 368 degC, the linear gain was 10.4 dB and a power added efficiency of 43.9% was achieved. We also investigated the temperature dependence of equivalent circuit values, and found that the temperature dependence of saturated output power and the linear gain is originated from the temperature dependence of electron velocity in the channel.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"256 1","pages":"4 pp.-"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78109910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516747
M. DeLisio, B. Deckman, Chun-Tung Cheung, S. Martin, C.J. Rollison, J. Rosenberg, G. Smith, J. Eisenberg
By spatially combining the outputs of many solid-state devices on a single chip, grid amplifiers are not only powerful, linear, and efficient, but also are compact, rugged, and robust. We present measured data from a fully-packaged Ka-band module with standard waveguide input and output flanges. With a 50/spl deg/C baseplate temperature, the module can be biased to deliver from 10 to 16 Watts of rated output power in the 30-31 GHz band. The module exhibits very good spectral regrowth performance, and can be operated well into saturation in single-carrier terminals for shared-spectrum multiple-access applications.
{"title":"Power and spectral regrowth performance of 10-W and 16-W Ka-band power amplifiers with single-chip output stages","authors":"M. DeLisio, B. Deckman, Chun-Tung Cheung, S. Martin, C.J. Rollison, J. Rosenberg, G. Smith, J. Eisenberg","doi":"10.1109/MWSYM.2005.1516747","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516747","url":null,"abstract":"By spatially combining the outputs of many solid-state devices on a single chip, grid amplifiers are not only powerful, linear, and efficient, but also are compact, rugged, and robust. We present measured data from a fully-packaged Ka-band module with standard waveguide input and output flanges. With a 50/spl deg/C baseplate temperature, the module can be biased to deliver from 10 to 16 Watts of rated output power in the 30-31 GHz band. The module exhibits very good spectral regrowth performance, and can be operated well into saturation in single-carrier terminals for shared-spectrum multiple-access applications.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"58 1","pages":"4 pp.-842"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74940143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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