Pub Date : 2024-07-30DOI: 10.1109/JQE.2024.3431497
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2024.3431497","DOIUrl":"10.1109/JQE.2024.3431497","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 4","pages":"C3-C3"},"PeriodicalIF":2.2,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10615232","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/JQE.2024.3434658
Yuheng Ding;Shi Zhang
Defects such as high dark current, low temperature working conditions, low flexibility hinder the development of traditional material photodetectors. While some innovative low-dimensional materials, such as black phosphorus, are highly unstable. As a twin material of black phosphorus, black arsenic (b-As) has excellent properties of black phosphorus and relatively eliminates the characteristics of instability. Here, a high-performance photodetector based on black arsenic is proposed in detecting visible, near infrared and terahertz. The b-As photodetector exhibits a fast response speed while maintaining a responsivity of 647.5 V/W and a noise equivalent power of $2.30times 10 ^{-11}$