Pub Date : 2025-08-08DOI: 10.1109/JQE.2025.3597249
Tengmu Chen;Xiaojun Xie;Chao Wei;Wei Pan;Lianshan Yan
we demonstrate a back-illuminated flip-chip bonded modified uni-traveling carrier photodiodes by optimizing coplanar waveguide on AlN to improve the bandwidth and output power of the photodiode. The 3-dB bandwidth of the optimized devices increased from 56 GHz to 67 GHz for the $14~mu $ m diameter photodiode, and from 39 GHz to 46 GHz for the $20~mu $ m diameter device, representing an approximate 20% improvement in both cases. Thanks to the improved high-frequency performance of the devices, the photodiodes with diameters of $22~mu $ m and $14~mu $ m exhibit high RF output powers of 23.8 dBm at 30 GHz and 17 dBm at 65 GHz, respectively. The $14~mu $ m diameter PD exhibits low phase noise, with the maximum phase variation of the RF signal remaining within 10 degrees across the photocurrent range of 5 mA to 50 mA. The phase noise of optically generated RF signals, exacerbated by coupling amplitude noise on an optical pulse train to phase noise (AM-PM), exhibits a null at 17 mA. Additionally, the fully packaged module with a $22~mu $ m diameter photodiode exhibits a 3-dB bandwidth of 40 GHz and a high RF output power of 16.6 dBm at 40 GHz. This study lays the groundwork for the development of high-performance microwave photonics system and the generation of ultra-low noise microwave signals.
{"title":"High-Power Photodiodes With Optimized Electrode Design","authors":"Tengmu Chen;Xiaojun Xie;Chao Wei;Wei Pan;Lianshan Yan","doi":"10.1109/JQE.2025.3597249","DOIUrl":"https://doi.org/10.1109/JQE.2025.3597249","url":null,"abstract":"we demonstrate a back-illuminated flip-chip bonded modified uni-traveling carrier photodiodes by optimizing coplanar waveguide on AlN to improve the bandwidth and output power of the photodiode. The 3-dB bandwidth of the optimized devices increased from 56 GHz to 67 GHz for the <inline-formula> <tex-math>$14~mu $ </tex-math></inline-formula>m diameter photodiode, and from 39 GHz to 46 GHz for the <inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>m diameter device, representing an approximate 20% improvement in both cases. Thanks to the improved high-frequency performance of the devices, the photodiodes with diameters of <inline-formula> <tex-math>$22~mu $ </tex-math></inline-formula>m and <inline-formula> <tex-math>$14~mu $ </tex-math></inline-formula>m exhibit high RF output powers of 23.8 dBm at 30 GHz and 17 dBm at 65 GHz, respectively. The <inline-formula> <tex-math>$14~mu $ </tex-math></inline-formula>m diameter PD exhibits low phase noise, with the maximum phase variation of the RF signal remaining within 10 degrees across the photocurrent range of 5 mA to 50 mA. The phase noise of optically generated RF signals, exacerbated by coupling amplitude noise on an optical pulse train to phase noise (AM-PM), exhibits a null at 17 mA. Additionally, the fully packaged module with a <inline-formula> <tex-math>$22~mu $ </tex-math></inline-formula>m diameter photodiode exhibits a 3-dB bandwidth of 40 GHz and a high RF output power of 16.6 dBm at 40 GHz. This study lays the groundwork for the development of high-performance microwave photonics system and the generation of ultra-low noise microwave signals.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145021359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-04DOI: 10.1109/JQE.2025.3595820
Dong Wang;Liangjiang Zhou;Juanying Zhao;Yibo Zhao
Robust and secure ranging is essential for numerous light detection and ranging (LiDAR) applications. Traditional LiDAR systems, however, are susceptible to deception jamming, such as intercept-and-resend spoofing attacks, due to their use of classical signals for interrogating non-cooperative targets. While quantum-secured imaging protocols have been proposed to counter these attacks, practical models have been scarce. This paper presents a quantum-secured LiDAR protocol using time-bin phase-encoded quantum states for simultaneous ranging and security assessment. Ranging is done via cross-correlating signals, and security assessment by statistically analyzing error rates. We develop an analytical model to evaluate the system’s resilience against intercept-resend spoofing attacks, demonstrating through numerical simulations that such attacks can be detected with high probability and low false-alarm rates under certain conditions. The scheme is robust against polarization disturbances and phase drifts, and can be implemented using existing technology, signifying its potential in quantum radar applications to improve the security and reliability of optical ranging and imaging systems.
{"title":"Time-Bin Phase-Encoding Quantum-Secured LiDAR Against Spoofing Attacks","authors":"Dong Wang;Liangjiang Zhou;Juanying Zhao;Yibo Zhao","doi":"10.1109/JQE.2025.3595820","DOIUrl":"https://doi.org/10.1109/JQE.2025.3595820","url":null,"abstract":"Robust and secure ranging is essential for numerous light detection and ranging (LiDAR) applications. Traditional LiDAR systems, however, are susceptible to deception jamming, such as intercept-and-resend spoofing attacks, due to their use of classical signals for interrogating non-cooperative targets. While quantum-secured imaging protocols have been proposed to counter these attacks, practical models have been scarce. This paper presents a quantum-secured LiDAR protocol using time-bin phase-encoded quantum states for simultaneous ranging and security assessment. Ranging is done via cross-correlating signals, and security assessment by statistically analyzing error rates. We develop an analytical model to evaluate the system’s resilience against intercept-resend spoofing attacks, demonstrating through numerical simulations that such attacks can be detected with high probability and low false-alarm rates under certain conditions. The scheme is robust against polarization disturbances and phase drifts, and can be implemented using existing technology, signifying its potential in quantum radar applications to improve the security and reliability of optical ranging and imaging systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-11"},"PeriodicalIF":2.1,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-28DOI: 10.1109/JQE.2025.3593150
Wei-Hao Huang;Cheng-Chun Chen;Ji-Yao Shan;Kai-Lun Chi;Tien-Chang Lu
This report investigates 940 nm vertical-cavity surface-emitting lasers (VCSELs) with three-junction (3J) designs under various pulsed driving conditions, focusing on the influence of oxide layer configurations on electrical and optical performance. Heat accumulation is a critical issue in VCSEL operation; therefore, reducing pulse width effectively minimizes heat generation. This not only enhances the thermal characteristics of the devices but also suppresses lateral carrier diffusion—particularly important in longer resonant cavity structures such as multi-junction VCSELs. At room temperature, a 3J 940 nm VCSEL with a $10mu $ m oxide aperture driven by 2 ns pulses achieved a slope efficiency (SE) of 3.2 W/A using a three-layer oxide structure, compared to 2.37 W/A for a single-layer oxide design. Both devices exhibited a red spectral shift of less than 1 nm, corresponding to a temperature rise below $12~^{circ }$ C, indicating improved thermal management. Notably, a unique behavior was observed in the three-oxide-layer 3J VCSEL: as the injection current increased, the beam divergence angle decreased from 17° to 5°. These findings highlight the advantages of multi-junction VCSELs with optimized oxide designs, demonstrating their potential for future high-performance sensing applications.
{"title":"Effects of Multiple Oxide Layers in Multi-Junction VCSELs Under Different Pulse Conditions","authors":"Wei-Hao Huang;Cheng-Chun Chen;Ji-Yao Shan;Kai-Lun Chi;Tien-Chang Lu","doi":"10.1109/JQE.2025.3593150","DOIUrl":"https://doi.org/10.1109/JQE.2025.3593150","url":null,"abstract":"This report investigates 940 nm vertical-cavity surface-emitting lasers (VCSELs) with three-junction (3J) designs under various pulsed driving conditions, focusing on the influence of oxide layer configurations on electrical and optical performance. Heat accumulation is a critical issue in VCSEL operation; therefore, reducing pulse width effectively minimizes heat generation. This not only enhances the thermal characteristics of the devices but also suppresses lateral carrier diffusion—particularly important in longer resonant cavity structures such as multi-junction VCSELs. At room temperature, a 3J 940 nm VCSEL with a <inline-formula> <tex-math>$10mu $ </tex-math></inline-formula> m oxide aperture driven by 2 ns pulses achieved a slope efficiency (SE) of 3.2 W/A using a three-layer oxide structure, compared to 2.37 W/A for a single-layer oxide design. Both devices exhibited a red spectral shift of less than 1 nm, corresponding to a temperature rise below <inline-formula> <tex-math>$12~^{circ }$ </tex-math></inline-formula>C, indicating improved thermal management. Notably, a unique behavior was observed in the three-oxide-layer 3J VCSEL: as the injection current increased, the beam divergence angle decreased from 17° to 5°. These findings highlight the advantages of multi-junction VCSELs with optimized oxide designs, demonstrating their potential for future high-performance sensing applications.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3582130
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2025.3582130","DOIUrl":"https://doi.org/10.1109/JQE.2025.3582130","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"C3-C3"},"PeriodicalIF":2.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11095970","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3583096
John M. Dallesasse
{"title":"Editorial JQE 60th Anniversary: The 80’s","authors":"John M. Dallesasse","doi":"10.1109/JQE.2025.3583096","DOIUrl":"https://doi.org/10.1109/JQE.2025.3583096","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-2"},"PeriodicalIF":2.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11095905","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3587556
{"title":"Electrooptical Effects in Silicon","authors":"","doi":"10.1109/JQE.2025.3587556","DOIUrl":"https://doi.org/10.1109/JQE.2025.3587556","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3592448
Vinit Kumar;Ajit Kumar;Rupam Srivastava;Anuj K. Sharma;Yogendra Kumar Prajapati
This research investigates the integration of photonic spin-orbit interaction (SOI) with plasmonic phenomenon using Barium Titanate (BaTiO3) as the active material. A remarkable transverse spin-dependent shift (SDS) of $838~boldsymbol {mu }mathbf {m}$ is demonstrated—approximately 28 times larger than that observed in conventional plasmonic material such as silver (Ag). The study further explores the interplay between the enhanced electric field and spin-dependent splitting under resonance conditions, revealing that the resonance angle is strongly influenced by both SDS magnitude and field enhancement. Leveraging this enhanced spin-based interaction, we demonstrate the potential for quantum-enabled optical device design, including an optical differentiator and a high-sensitivity sensor. The proposed differentiator structure exhibits a power weight of 414.96 for the co-polarized (V–V) component and 0.35 for the cross-polarized (V–H/H–V) component. Moreover, the photonic spin-based sensor architecture achieves a sensitivity enhancement of $sim~52times $ compared to a standard plasmonic system at a refractive index of 1.33. These findings establish BaTiO3-integrated plasmonic platforms as promising candidates for advanced spin-based photonic devices in the realm of quantum technologies.
{"title":"High Magnitude Spin-Dependent Shift and Field Enhancement in BaTiO3-Based Plasmonics for Quantum Photonic Applications","authors":"Vinit Kumar;Ajit Kumar;Rupam Srivastava;Anuj K. Sharma;Yogendra Kumar Prajapati","doi":"10.1109/JQE.2025.3592448","DOIUrl":"https://doi.org/10.1109/JQE.2025.3592448","url":null,"abstract":"This research investigates the integration of photonic spin-orbit interaction (SOI) with plasmonic phenomenon using Barium Titanate (BaTiO3) as the active material. A remarkable transverse spin-dependent shift (SDS) of <inline-formula> <tex-math>$838~boldsymbol {mu }mathbf {m}$ </tex-math></inline-formula> is demonstrated—approximately 28 times larger than that observed in conventional plasmonic material such as silver (Ag). The study further explores the interplay between the enhanced electric field and spin-dependent splitting under resonance conditions, revealing that the resonance angle is strongly influenced by both SDS magnitude and field enhancement. Leveraging this enhanced spin-based interaction, we demonstrate the potential for quantum-enabled optical device design, including an optical differentiator and a high-sensitivity sensor. The proposed differentiator structure exhibits a power weight of 414.96 for the co-polarized (V–V) component and 0.35 for the cross-polarized (V–H/H–V) component. Moreover, the photonic spin-based sensor architecture achieves a sensitivity enhancement of <inline-formula> <tex-math>$sim~52times $ </tex-math></inline-formula> compared to a standard plasmonic system at a refractive index of 1.33. These findings establish BaTiO3-integrated plasmonic platforms as promising candidates for advanced spin-based photonic devices in the realm of quantum technologies.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3587557
{"title":"Theory of the Linewidth of Semiconductor Lasers","authors":"","doi":"10.1109/JQE.2025.3587557","DOIUrl":"https://doi.org/10.1109/JQE.2025.3587557","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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