Pub Date : 2024-01-08DOI: 10.1109/JQE.2024.3350688
Yang Xiao;Jian Cui;Xusheng Xiao;Yantao Xu;Haitao Guo
A novel $1.7 mu text{m}$ and $2.4 mu text{m}$ dual-wavelength pumping scheme for a $4.3 mu text{m}$ dysprosium (Dy3+)-doped chalcogenide fiber laser was theoretically demonstrated. It was attributed to the $2.4 mu text{m}$ excited stated absorption (ESA, $^{6}text{H}_{mathrm {13/2}} to ^{6}text{H}_{mathrm {9/2}},^{6}text{F}_{mathrm {11/2}}$ transition). Theoretically, when the two pumps were 5 W and 2 W, respectively, a laser power of 1.5 W with an remarkable efficiency of 30.2% was obtained from the home-made Dy3+:Ga0.8As34.2Sb5S60 glass fiber with a loss coefficient of 3 dB/m and a Dy3+ concentration of $3.67times 10^{25}$ ions/m3. Results indicated that the dual-wavelength pumping scheme based on the gain fiber provides a potential way to $4.3 mu text{m}$ dysprosium-doped chalcogenide fiber lasers.
为4.3 mu text{m}$掺杂镝（Dy3+）的掺钙光纤激光器设计的新型1.7 mu text{m}$和2.4 mu text{m}$双波长泵浦方案在理论上得到了证实。它归因于 2.4 mu text{m}$ 激发声明吸收（ESA，$^{6}{H}_{mathrm {13/2}}到 ^{6}text{H}_{mathrm {9/2}}, ^{6}text{F}_{mathrm {11/2}}$ 转变）。理论上，当两个泵浦的功率分别为 5 W 和 2 W 时，自制的 Dy3+:Ga0.8As34.2Sb5S60 玻璃光纤的损耗系数为 3 dB/m，Dy3+ 浓度为 3.67/times 10^{25}$ 离子/m3，可获得 1.5 W 的激光功率和 30.2% 的出色效率。结果表明，基于增益光纤的双波长泵浦方案为 4.3 mu text{m}$掺镝的掺钙光纤激光器提供了一种潜在的途径。
{"title":"Modeling of 1.7-μm and 2.4-μm Dual-Wavelength Pumped 4.3-μm Dysprosium-Doped Chalcogenide Fiber Lasers","authors":"Yang Xiao;Jian Cui;Xusheng Xiao;Yantao Xu;Haitao Guo","doi":"10.1109/JQE.2024.3350688","DOIUrl":"10.1109/JQE.2024.3350688","url":null,"abstract":"A novel \u0000<inline-formula> <tex-math>$1.7 mu text{m}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$2.4 mu text{m}$ </tex-math></inline-formula>\u0000 dual-wavelength pumping scheme for a \u0000<inline-formula> <tex-math>$4.3 mu text{m}$ </tex-math></inline-formula>\u0000 dysprosium (Dy3+)-doped chalcogenide fiber laser was theoretically demonstrated. It was attributed to the \u0000<inline-formula> <tex-math>$2.4 mu text{m}$ </tex-math></inline-formula>\u0000 excited stated absorption (ESA, \u0000<inline-formula> <tex-math>$^{6}text{H}_{mathrm {13/2}} to ^{6}text{H}_{mathrm {9/2}},^{6}text{F}_{mathrm {11/2}}$ </tex-math></inline-formula>\u0000 transition). Theoretically, when the two pumps were 5 W and 2 W, respectively, a laser power of 1.5 W with an remarkable efficiency of 30.2% was obtained from the home-made Dy3+:Ga0.8As34.2Sb5S60 glass fiber with a loss coefficient of 3 dB/m and a Dy3+ concentration of \u0000<inline-formula> <tex-math>$3.67times 10^{25}$ </tex-math></inline-formula>\u0000 ions/m3. Results indicated that the dual-wavelength pumping scheme based on the gain fiber provides a potential way to \u0000<inline-formula> <tex-math>$4.3 mu text{m}$ </tex-math></inline-formula>\u0000 dysprosium-doped chalcogenide fiber lasers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-6"},"PeriodicalIF":2.5,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-08DOI: 10.1109/JQE.2023.3348113
Tamir Weinstock;Ofer Amrani
Electro-optical feedback circuit is presented and analyzed. The method realizes a closed-loop positive feedback by feeding the electrodes of a Mach-Zehnder interferometer with the voltage produced by its own detection circuit. In its basic form, it is shown to act as a multi-level opto-electric quantizer. The quantization behavior disclosed herein is realized via the opto-electric conversion process itself. The circuit is modeled by an equivalent electronic representation with which the static and dynamic behavior of the circuit is characterized. A component-level electro-optical simulation is included, supporting the theoretical results.
{"title":"Electro-Optical Feedback for (Nearly) All-Optical Detection","authors":"Tamir Weinstock;Ofer Amrani","doi":"10.1109/JQE.2023.3348113","DOIUrl":"10.1109/JQE.2023.3348113","url":null,"abstract":"Electro-optical feedback circuit is presented and analyzed. The method realizes a closed-loop positive feedback by feeding the electrodes of a Mach-Zehnder interferometer with the voltage produced by its own detection circuit. In its basic form, it is shown to act as a multi-level opto-electric quantizer. The quantization behavior disclosed herein is realized via the opto-electric conversion process itself. The circuit is modeled by an equivalent electronic representation with which the static and dynamic behavior of the circuit is characterized. A component-level electro-optical simulation is included, supporting the theoretical results.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-03DOI: 10.1109/JQE.2024.3349516
Dhiman Nag;Weiming Yao;Jos J. G. M. van der Tol
The balanced photodetector (BPD) is an important component for high-speed coherent receiver. An optimization strategy of waveguide-based multi-quantum well (MQW) BPDs, operating at 1550 nm is demonstrated on a generic InP platform. Design parameters of BPD are optimized towards achieving the highest bandwidth for a responsivity through an algorithm based on Particle Swarm Optimization (PSO). We do so by establishing an equivalent circuit model of BPD and analyzing its opto-electronic transfer function through numerical modelling. We address the major bottlenecks of high-speed BPDs: transit time of generated carriers and RC loading in our model. The algorithm is able to provide multiple combinations of design parameters with the same output characteristics. The design methodology to integrate laser with optimized BPD is presented to successfully implement a coherent receiver.
{"title":"Optimization of Balanced Detector for Coherent Receiver on Generic InP Platform by Particle Swarm Optimization","authors":"Dhiman Nag;Weiming Yao;Jos J. G. M. van der Tol","doi":"10.1109/JQE.2024.3349516","DOIUrl":"10.1109/JQE.2024.3349516","url":null,"abstract":"The balanced photodetector (BPD) is an important component for high-speed coherent receiver. An optimization strategy of waveguide-based multi-quantum well (MQW) BPDs, operating at 1550 nm is demonstrated on a generic InP platform. Design parameters of BPD are optimized towards achieving the highest bandwidth for a responsivity through an algorithm based on Particle Swarm Optimization (PSO). We do so by establishing an equivalent circuit model of BPD and analyzing its opto-electronic transfer function through numerical modelling. We address the major bottlenecks of high-speed BPDs: transit time of generated carriers and RC loading in our model. The algorithm is able to provide multiple combinations of design parameters with the same output characteristics. The design methodology to integrate laser with optimized BPD is presented to successfully implement a coherent receiver.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-12"},"PeriodicalIF":2.5,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10379816","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-29DOI: 10.1109/JQE.2023.3348112
John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse
The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained for >8 hours. GaN p-i-n LED structures are implanted with manganese to form a ferromagnetic phase and illuminated with resonant photons across the GaN bandgap. The magnetization after illumination is found to increase by $0.2~mu _{B}$ /Mn atom. Subsequent illumination below the GaN:Mn bandgap is found to remove the photo-enhancement of magnetism and fully demagnetize the material. The optically-driven process confirms that photon absorption drives hole-media induced ferromagnetic changes to the top layer in GaN:Mn structures. A modified p-i-n structure is designed that situates a two-dimensional hole gas (2DHG) beneath the magnetic layer for improvement of the hole injection effect. The mid-gap state formed by the implanted manganese in GaN:Mn is simulated for two-photon electromagnetic induced transparency that can control the absorption of the top layer and moderate the hole injection. The design of GaN:Mn p-i-n structures is explored for spin-photon mapping of states for long-term storage in memory systems.
在基于氮化镓的 pi-n 外延结构中植入锰，可在室温下形成铁磁相，这种铁磁相可被光增强并保持 8 小时以上。在 GaN pi-n LED 结构中植入锰以形成铁磁相，并用跨 GaN 带隙的谐振光子进行照明。发现照明后的磁化率增加了 0.2~mu _{B}$ /锰原子。随后在氮化镓：锰带隙以下进行光照，可消除光增强磁性并使材料完全消磁。这一光学驱动过程证实，光子吸收驱动了 GaN:Mn 结构顶层的空穴介质诱导铁磁变化。为了改善空穴注入效应，我们设计了一种改进的 pi-n 结构，将二维空穴气体（2DHG）置于磁层之下。在 GaN:Mn 中植入锰形成的中隙态被模拟为双光子电磁诱导透明，它可以控制顶层的吸收并缓和空穴注入。探讨了 GaN:Mn pi-n 结构的自旋光子映射态设计，以用于存储器系统的长期存储。
{"title":"Photo-Enhanced Room Temperature Magnetism and Two-Photon Effects in Manganese-Implanted Gallium Nitride p-i-n Structures","authors":"John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse","doi":"10.1109/JQE.2023.3348112","DOIUrl":"https://doi.org/10.1109/JQE.2023.3348112","url":null,"abstract":"The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained for >8 hours. GaN p-i-n LED structures are implanted with manganese to form a ferromagnetic phase and illuminated with resonant photons across the GaN bandgap. The magnetization after illumination is found to increase by \u0000<inline-formula> <tex-math>$0.2~mu _{B}$ </tex-math></inline-formula>\u0000/Mn atom. Subsequent illumination below the GaN:Mn bandgap is found to remove the photo-enhancement of magnetism and fully demagnetize the material. The optically-driven process confirms that photon absorption drives hole-media induced ferromagnetic changes to the top layer in GaN:Mn structures. A modified p-i-n structure is designed that situates a two-dimensional hole gas (2DHG) beneath the magnetic layer for improvement of the hole injection effect. The mid-gap state formed by the implanted manganese in GaN:Mn is simulated for two-photon electromagnetic induced transparency that can control the absorption of the top layer and moderate the hole injection. The design of GaN:Mn p-i-n structures is explored for spin-photon mapping of states for long-term storage in memory systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 1","pages":"1-12"},"PeriodicalIF":2.5,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139399819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-22DOI: 10.1109/JQE.2023.3345875
{"title":"2023 Index IEEE Journal of Quantum Electronics Vol.59","authors":"","doi":"10.1109/JQE.2023.3345875","DOIUrl":"10.1109/JQE.2023.3345875","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"1-21"},"PeriodicalIF":2.5,"publicationDate":"2023-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10372134","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139014895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-13DOI: 10.1109/JQE.2023.3342180
Mattéo Chobé;Karim Hassan
We present a rate equation model for the simulation of quantum dot lasers focusing on modeling the thermal behavior of p-doped devices, which are known to exhibit a reduced temperature sensitivity. The simulation results are compared with experimental data from the literature to demonstrate the model accuracy and underline the impact of npp Auger recombination and intervalence band absorption on the high room-temperature characteristic temperature of p-doped lasers. Applying this model to membrane lasers featuring high optical confinement factors in small active regions due to the use of thin III-V stacks as compared to conventional lasers, we demonstrate the potential of such lasers for short-distance optical interconnects as high temperature (110 °C) operation is predicted for an optimized design, with submilliamp threshold up to 60 °C.
我们提出了一种用于模拟量子点激光器的速率方程模型，重点是模拟对掺杂器件的热行为，众所周知，对掺杂器件的温度敏感性较低。模拟结果与文献中的实验数据进行了比较，从而证明了模型的准确性，并强调了 npp 奥杰尔重组和间隔带吸收对 p 掺杂激光器高室温特性温度的影响。与传统激光器相比，薄膜激光器由于使用了薄的 III-V 叠层，因此在小有源区内具有高光学约束因子。我们将该模型应用于薄膜激光器，证明了这种激光器在短距离光互连方面的潜力，因为根据优化设计，这种激光器可在高温（110 °C）下工作，亚毫安阈值可高达 60 °C。
{"title":"Steady-State Semi-Analytical Modeling of p-Doped Quantum Dot Lasers Thermal Characteristics and Extrapolation to Membrane Lasers","authors":"Mattéo Chobé;Karim Hassan","doi":"10.1109/JQE.2023.3342180","DOIUrl":"https://doi.org/10.1109/JQE.2023.3342180","url":null,"abstract":"We present a rate equation model for the simulation of quantum dot lasers focusing on modeling the thermal behavior of p-doped devices, which are known to exhibit a reduced temperature sensitivity. The simulation results are compared with experimental data from the literature to demonstrate the model accuracy and underline the impact of npp Auger recombination and intervalence band absorption on the high room-temperature characteristic temperature of p-doped lasers. Applying this model to membrane lasers featuring high optical confinement factors in small active regions due to the use of thin III-V stacks as compared to conventional lasers, we demonstrate the potential of such lasers for short-distance optical interconnects as high temperature (110 °C) operation is predicted for an optimized design, with submilliamp threshold up to 60 °C.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 1","pages":"1-9"},"PeriodicalIF":2.5,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138822194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-29DOI: 10.1109/JQE.2023.3333157
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2023.3333157","DOIUrl":"https://doi.org/10.1109/JQE.2023.3333157","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"C3-C3"},"PeriodicalIF":2.5,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10334510","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138468231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-29DOI: 10.1109/JQE.2023.3333719
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/JQE.2023.3333719","DOIUrl":"https://doi.org/10.1109/JQE.2023.3333719","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"1-1"},"PeriodicalIF":2.5,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10334508","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138468173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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