Pub Date : 2025-12-15DOI: 10.1109/JQE.2025.3644246
Jaden Ingleton;Omid Esmaeeli;Sudip Shekhar
Electro-optical simulation of integrated photonics and electronics can be carried out today in most electronic design automation (EDA) software. However, lasers are still modeled simply as a continuous wave ideal light source, preventing the measure of the impact of its non-idealities in various optical systems. In this work, we construct an equivalent circuit model of the laser rate equations, including phase and accounting for the correlated noise sources, and implement the model in Verilog-A. Internal laser parameters are extracted from measurement data of a Distributed Feedback (DFB) laser, and we find good agreement between the measurements and simulations of the model. Furthermore, we demonstrate our model by simulating a quadrature phase-shift-keying (QPSK) circuit. Our laser model enables simulations of simple electro-optic circuits that capture the dynamics and noise characteristics of semiconductor lasers.
{"title":"A Verilog-A Laser Model for Use in Electro-Optical Simulations","authors":"Jaden Ingleton;Omid Esmaeeli;Sudip Shekhar","doi":"10.1109/JQE.2025.3644246","DOIUrl":"https://doi.org/10.1109/JQE.2025.3644246","url":null,"abstract":"Electro-optical simulation of integrated photonics and electronics can be carried out today in most electronic design automation (EDA) software. However, lasers are still modeled simply as a continuous wave ideal light source, preventing the measure of the impact of its non-idealities in various optical systems. In this work, we construct an equivalent circuit model of the laser rate equations, including phase and accounting for the correlated noise sources, and implement the model in Verilog-A. Internal laser parameters are extracted from measurement data of a Distributed Feedback (DFB) laser, and we find good agreement between the measurements and simulations of the model. Furthermore, we demonstrate our model by simulating a quadrature phase-shift-keying (QPSK) circuit. Our laser model enables simulations of simple electro-optic circuits that capture the dynamics and noise characteristics of semiconductor lasers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 1","pages":"1-12"},"PeriodicalIF":2.1,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-11DOI: 10.1109/JQE.2025.3636522
Kubra Circir;Ellie Y. Wang;J. Andrew McArthur;Daniel Herrera;Seth R. Bank;Joe C. Campbell
Al0.3InAsSb/Al0.7InAsSb digital alloy nBn extended short-wavelength infrared photodetectors are reported. These devices exhibit a room-temperature cut-off wavelength of $sim $ 2.3 $mu $ m. Variable area diode analysis reveals that the bulk current density dominates for device diameters exceeding $64~mu $ m. At 300 K under −0.35 V bias, the dark current density is 1.75 mA/cm2, reducing to 4.9 nA/cm2 at 160 K under −0.25 V. The devices have a saturated room-temperature quantum efficiency of ~36% at $2~mu $ m without an anti-reflective coating, corresponding to a 33% improvement over an earlier design. The RA product is $408~Omega $ cm2 at −0.35 V bias, resulting in a shot-noise limited specific detectivity of $2.28times 10 ^{mathrm {10}}mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ and $1.1times 10 ^{12} mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ at 300 K and 160 K, respectively.
报道了Al0.3InAsSb/Al0.7InAsSb数字合金nBn扩展短波红外探测器。这些器件的室温截止波长为$sim $ 2.3 $mu $ m。变面积二极管分析表明，当器件直径超过$64~mu $ m时，体电流密度占主导地位。在−0.35 V偏置下300 K时，暗电流密度为1.75 mA/cm2，在−0.25 V偏置下160 K时，暗电流密度降至4.9 nA/cm2。该器件的饱和室温量子效率为36% at $2~mu $ m without an anti-reflective coating, corresponding to a 33% improvement over an earlier design. The RA product is $408~Omega $ cm2 at −0.35 V bias, resulting in a shot-noise limited specific detectivity of $2.28times 10 ^{mathrm {10}}mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ and $1.1times 10 ^{12} mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ at 300 K and 160 K, respectively.
{"title":"Extended Short-Wavelength Infrared AlInAsSb nBn Photodetectors","authors":"Kubra Circir;Ellie Y. Wang;J. Andrew McArthur;Daniel Herrera;Seth R. Bank;Joe C. Campbell","doi":"10.1109/JQE.2025.3636522","DOIUrl":"https://doi.org/10.1109/JQE.2025.3636522","url":null,"abstract":"Al0.3InAsSb/Al0.7InAsSb digital alloy nBn extended short-wavelength infrared photodetectors are reported. These devices exhibit a room-temperature cut-off wavelength of <inline-formula> <tex-math>$sim $ </tex-math></inline-formula>2.3 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m. Variable area diode analysis reveals that the bulk current density dominates for device diameters exceeding <inline-formula> <tex-math>$64~mu $ </tex-math></inline-formula>m. At 300 K under −0.35 V bias, the dark current density is 1.75 mA/cm2, reducing to 4.9 nA/cm2 at 160 K under −0.25 V. The devices have a saturated room-temperature quantum efficiency of ~36% at <inline-formula> <tex-math>$2~mu $ </tex-math></inline-formula>m without an anti-reflective coating, corresponding to a 33% improvement over an earlier design. The RA product is <inline-formula> <tex-math>$408~Omega $ </tex-math></inline-formula>cm2 at −0.35 V bias, resulting in a shot-noise limited specific detectivity of <inline-formula> <tex-math>$2.28times 10 ^{mathrm {10}}mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$1.1times 10 ^{12} mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ </tex-math></inline-formula>at 300 K and 160 K, respectively.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 1","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-28DOI: 10.1109/JQE.2025.3638679
G. Sornambigai;A. Esther Lidiya;R. Vasantha Jayakantha Raja
We propose and design a holmium-doped ZBLAN (Ho:ZBLAN) tapered photonic crystal fiber (TPCF) for generating ultrashort mid-infrared (mid-IR) pulses at $2.86~mu $ m, utilizing a nonlinear optical loop mirror configuration (NOLM). The dispersion and nonlinear properties of the TPCF are engineered using a self-similar tapering technique, which gradually varies the core diameter and pitch along the fiber length. Initially, an undoped ZBLAN TPCF is investigated with this approach to enable the generation of low-pedestal, few-cycle ultrashort pulses at $2.86~mu $ m. The study then extends to analyze the propagation dynamics of higher-order solitons in the Ho:ZBLAN TPCF under various low input powers, ensuring operation below the fiber’s damage threshold. This analysis captures both the self-switching behavior of the NOLM and the self-similar pulse evolution within the fiber across different power levels. By optimizing the input pump power and fiber length, we demonstrate that a 5 ps pulse at $2.8~mu $ m can be compressed to 187 fs after propagating through 4.3 m of fiber, achieving a maximum compression factor of 26.7, a quality factor of 1.12, and a minimal pedestal energy of 0.63%.
{"title":"Pulse Compression in Ho:ZBLAN Photonic Crystal Fiber Using a NOLM Configuration for Ultrashort Mid-IR Generation","authors":"G. Sornambigai;A. Esther Lidiya;R. Vasantha Jayakantha Raja","doi":"10.1109/JQE.2025.3638679","DOIUrl":"https://doi.org/10.1109/JQE.2025.3638679","url":null,"abstract":"We propose and design a holmium-doped ZBLAN (Ho:ZBLAN) tapered photonic crystal fiber (TPCF) for generating ultrashort mid-infrared (mid-IR) pulses at <inline-formula> <tex-math>$2.86~mu $ </tex-math></inline-formula>m, utilizing a nonlinear optical loop mirror configuration (NOLM). The dispersion and nonlinear properties of the TPCF are engineered using a self-similar tapering technique, which gradually varies the core diameter and pitch along the fiber length. Initially, an undoped ZBLAN TPCF is investigated with this approach to enable the generation of low-pedestal, few-cycle ultrashort pulses at <inline-formula> <tex-math>$2.86~mu $ </tex-math></inline-formula>m. The study then extends to analyze the propagation dynamics of higher-order solitons in the Ho:ZBLAN TPCF under various low input powers, ensuring operation below the fiber’s damage threshold. This analysis captures both the self-switching behavior of the NOLM and the self-similar pulse evolution within the fiber across different power levels. By optimizing the input pump power and fiber length, we demonstrate that a 5 ps pulse at <inline-formula> <tex-math>$2.8~mu $ </tex-math></inline-formula>m can be compressed to 187 fs after propagating through 4.3 m of fiber, achieving a maximum compression factor of 26.7, a quality factor of 1.12, and a minimal pedestal energy of 0.63%.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 1","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-07DOI: 10.1109/JQE.2025.3630564
Soumi Pal;Arpit Khandelwal;Nitin Bhatia
The 2D buried heterostructure (BH) laser with a symmetric transverse refractive index profile can generate radial and azimuthal polarized vector vortex beam (VVB) by exploiting the orthogonally polarized higher order transverse modes in pairs. We investigate the optimal structure and operating conditions for the stable generation of dual polarized modes under practical operating conditions, including gain saturation, spontaneous emission, carrier diffusion, and polarization sensitivity. As the corresponding BH laser supports higher order transverse modes, the dimensions of the active layers become larger than the diffusion length of the semiconductor. Thus, for the first time, we introduce the 2D diffusion model into the laser rate equation for higher order transverse modes. We show that the dynamic nature of the laser, due to nonlinear gain saturation and mode polarization, is suppressed by diffusion, resulting in more stable output under various operating conditions.
{"title":"Vector Vortex Beam Emission Using Higher Order Transverse Modes in a Buried Heterostructure Laser","authors":"Soumi Pal;Arpit Khandelwal;Nitin Bhatia","doi":"10.1109/JQE.2025.3630564","DOIUrl":"https://doi.org/10.1109/JQE.2025.3630564","url":null,"abstract":"The 2D buried heterostructure (BH) laser with a symmetric transverse refractive index profile can generate radial and azimuthal polarized vector vortex beam (VVB) by exploiting the orthogonally polarized higher order transverse modes in pairs. We investigate the optimal structure and operating conditions for the stable generation of dual polarized modes under practical operating conditions, including gain saturation, spontaneous emission, carrier diffusion, and polarization sensitivity. As the corresponding BH laser supports higher order transverse modes, the dimensions of the active layers become larger than the diffusion length of the semiconductor. Thus, for the first time, we introduce the 2D diffusion model into the laser rate equation for higher order transverse modes. We show that the dynamic nature of the laser, due to nonlinear gain saturation and mode polarization, is suppressed by diffusion, resulting in more stable output under various operating conditions.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-11"},"PeriodicalIF":2.1,"publicationDate":"2025-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-04DOI: 10.1109/JQE.2025.3609153
Alan E. Willner
{"title":"Guest Editorial JQE 60th Anniversary: The 2000’s","authors":"Alan E. Willner","doi":"10.1109/JQE.2025.3609153","DOIUrl":"https://doi.org/10.1109/JQE.2025.3609153","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-2"},"PeriodicalIF":2.1,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11224953","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-04DOI: 10.1109/JQE.2025.3617185
{"title":"Temporal Coupled-Mode Theory and the Presence of Non-Orthogonal Modes in Lossless Multimode Cavities","authors":"","doi":"10.1109/JQE.2025.3617185","DOIUrl":"https://doi.org/10.1109/JQE.2025.3617185","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-04DOI: 10.1109/JQE.2025.3617257
{"title":"Solid-State Time-of-Flight Range Camera","authors":"","doi":"10.1109/JQE.2025.3617257","DOIUrl":"https://doi.org/10.1109/JQE.2025.3617257","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-31DOI: 10.1109/JQE.2025.3627887
Yalçın Ata;Kamran Kiasaleh
Recently, quantum key distribution (QKD) has emerged as a prominent solution to provide secure and reliable communication in atmosphere. This paper investigates the effect of pointing error on the performance of QKD communication systems. The analytical solution of error and sift probabilities, quantum bit error rate (QBER) and secret key rate (SKR) are obtained depending on pointing error effect that is modeled by Rayleigh and Hoyt distributions. Our findings show that the increased beam waist, hence the increased pointing error, degrades the performance of QKD communication systems remarkably. Also, the symmetric pointing error, where horizontal and vertical pointing errors are equal, yields worse performance for QKD systems as compared to the asymmetric pointing error case where vertical and horizontal pointing errors are different. The undeniable effect of pointing error on the performance of QKD system highlights the importance of precise beam alignment to minimize the adverse effects of pointing errors, thereby ensuring the secure and efficient operation of QKD systems in various deployment scenarios.
{"title":"Pointing Error Influence on Quantum Key Distribution","authors":"Yalçın Ata;Kamran Kiasaleh","doi":"10.1109/JQE.2025.3627887","DOIUrl":"https://doi.org/10.1109/JQE.2025.3627887","url":null,"abstract":"Recently, quantum key distribution (QKD) has emerged as a prominent solution to provide secure and reliable communication in atmosphere. This paper investigates the effect of pointing error on the performance of QKD communication systems. The analytical solution of error and sift probabilities, quantum bit error rate (QBER) and secret key rate (SKR) are obtained depending on pointing error effect that is modeled by Rayleigh and Hoyt distributions. Our findings show that the increased beam waist, hence the increased pointing error, degrades the performance of QKD communication systems remarkably. Also, the symmetric pointing error, where horizontal and vertical pointing errors are equal, yields worse performance for QKD systems as compared to the asymmetric pointing error case where vertical and horizontal pointing errors are different. The undeniable effect of pointing error on the performance of QKD system highlights the importance of precise beam alignment to minimize the adverse effects of pointing errors, thereby ensuring the secure and efficient operation of QKD systems in various deployment scenarios.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-9"},"PeriodicalIF":2.1,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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