Pub Date : 2026-01-08DOI: 10.1109/JQE.2025.3640498
{"title":"IEEE Journal of Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JQE.2025.3640498","DOIUrl":"https://doi.org/10.1109/JQE.2025.3640498","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"C3-C3"},"PeriodicalIF":2.1,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11338825","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-22DOI: 10.1109/JQE.2025.3646966
Pradosh Basu;Sriganapathy Raghav;Utpal Roy
Generation and control of waveforms is a versatile tool for advanced technologies. Quantum arbitrary waveform generator is also in place by exploiting the quantum state of coherent light. Motivated by the high coherence and tunability of the trapped ultracold matter waves, which may offer a platform for arbitrary waveform generation with atoms, we present an exact analytical approach for designing the first atomic arbitrary waveform generator. Our method considers the dynamics of an one-dimensional Bose-Einstein condensate in a quantum simulation environment with a moving bichromatic optical lattice. Functional expressions and parameter regimes are derived for engineering some of the fundamental waveforms, including sinusoidal, sawtooth, triangular and square profiles. In addition, compound waveforms, such as step-sawtooth, triangular-square, slanted-square, and slanted-step-square are also constructed. A numerical stability analysis is explicated in support of the experimental feasibility of the reported atomic waveform generator.
{"title":"An Exact Analytical Method for Arbitrary Matter-Waveform Generation in Optical Lattices","authors":"Pradosh Basu;Sriganapathy Raghav;Utpal Roy","doi":"10.1109/JQE.2025.3646966","DOIUrl":"https://doi.org/10.1109/JQE.2025.3646966","url":null,"abstract":"Generation and control of waveforms is a versatile tool for advanced technologies. Quantum arbitrary waveform generator is also in place by exploiting the quantum state of coherent light. Motivated by the high coherence and tunability of the trapped ultracold matter waves, which may offer a platform for arbitrary waveform generation with atoms, we present an exact analytical approach for designing the first atomic arbitrary waveform generator. Our method considers the dynamics of an one-dimensional Bose-Einstein condensate in a quantum simulation environment with a moving bichromatic optical lattice. Functional expressions and parameter regimes are derived for engineering some of the fundamental waveforms, including sinusoidal, sawtooth, triangular and square profiles. In addition, compound waveforms, such as step-sawtooth, triangular-square, slanted-square, and slanted-step-square are also constructed. A numerical stability analysis is explicated in support of the experimental feasibility of the reported atomic waveform generator.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 1","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-18DOI: 10.1109/JQE.2025.3645768
Yaolin Fei;Qiuyue Zou;Dailiang Zhong;Wei Shi;Yao Ma;Liujing Xu;Wensong Li
This study presents a Q-switched numerical model that incorporates time-dependent reflectivity and its application to a visible holmium-doped fluorozirconate glass (Ho:ZBLAN) fiber laser system pumped by a blue laser diode. We systematically investigate the influence of reflectivity-switching time, pump power, and fiber length on the resulting pulse characteristics. Under a 0.8 W pump power, a reflectivity switching time of 150 ns, a fiber length of 25 cm, and a repetition rate of 100 kHz, stable deep-red Q-switched pulses with a width of 122 ns were achieved. The simulation results exhibit close agreement with experimental measurements, validating the model’s accuracy for predicting pulse dynamics. These findings provide critical guidance for the design and optimization of visible Q-switched fiber lasers and offer insights applicable to Q-switched fiber lasers across other spectral regions.
{"title":"Numerical Model and Experimental Validation of Visible Q-Switched Holmium-Doped Fiber Lasers","authors":"Yaolin Fei;Qiuyue Zou;Dailiang Zhong;Wei Shi;Yao Ma;Liujing Xu;Wensong Li","doi":"10.1109/JQE.2025.3645768","DOIUrl":"https://doi.org/10.1109/JQE.2025.3645768","url":null,"abstract":"This study presents a Q-switched numerical model that incorporates time-dependent reflectivity and its application to a visible holmium-doped fluorozirconate glass (Ho:ZBLAN) fiber laser system pumped by a blue laser diode. We systematically investigate the influence of reflectivity-switching time, pump power, and fiber length on the resulting pulse characteristics. Under a 0.8 W pump power, a reflectivity switching time of 150 ns, a fiber length of 25 cm, and a repetition rate of 100 kHz, stable deep-red Q-switched pulses with a width of 122 ns were achieved. The simulation results exhibit close agreement with experimental measurements, validating the model’s accuracy for predicting pulse dynamics. These findings provide critical guidance for the design and optimization of visible Q-switched fiber lasers and offer insights applicable to Q-switched fiber lasers across other spectral regions.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 1","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-15DOI: 10.1109/JQE.2025.3644246
Jaden Ingleton;Omid Esmaeeli;Sudip Shekhar
Electro-optical simulation of integrated photonics and electronics can be carried out today in most electronic design automation (EDA) software. However, lasers are still modeled simply as a continuous wave ideal light source, preventing the measure of the impact of its non-idealities in various optical systems. In this work, we construct an equivalent circuit model of the laser rate equations, including phase and accounting for the correlated noise sources, and implement the model in Verilog-A. Internal laser parameters are extracted from measurement data of a Distributed Feedback (DFB) laser, and we find good agreement between the measurements and simulations of the model. Furthermore, we demonstrate our model by simulating a quadrature phase-shift-keying (QPSK) circuit. Our laser model enables simulations of simple electro-optic circuits that capture the dynamics and noise characteristics of semiconductor lasers.
{"title":"A Verilog-A Laser Model for Use in Electro-Optical Simulations","authors":"Jaden Ingleton;Omid Esmaeeli;Sudip Shekhar","doi":"10.1109/JQE.2025.3644246","DOIUrl":"https://doi.org/10.1109/JQE.2025.3644246","url":null,"abstract":"Electro-optical simulation of integrated photonics and electronics can be carried out today in most electronic design automation (EDA) software. However, lasers are still modeled simply as a continuous wave ideal light source, preventing the measure of the impact of its non-idealities in various optical systems. In this work, we construct an equivalent circuit model of the laser rate equations, including phase and accounting for the correlated noise sources, and implement the model in Verilog-A. Internal laser parameters are extracted from measurement data of a Distributed Feedback (DFB) laser, and we find good agreement between the measurements and simulations of the model. Furthermore, we demonstrate our model by simulating a quadrature phase-shift-keying (QPSK) circuit. Our laser model enables simulations of simple electro-optic circuits that capture the dynamics and noise characteristics of semiconductor lasers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 1","pages":"1-12"},"PeriodicalIF":2.1,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-11DOI: 10.1109/JQE.2025.3636522
Kubra Circir;Ellie Y. Wang;J. Andrew McArthur;Daniel Herrera;Seth R. Bank;Joe C. Campbell
Al0.3InAsSb/Al0.7InAsSb digital alloy nBn extended short-wavelength infrared photodetectors are reported. These devices exhibit a room-temperature cut-off wavelength of $sim $ 2.3 $mu $ m. Variable area diode analysis reveals that the bulk current density dominates for device diameters exceeding $64~mu $ m. At 300 K under −0.35 V bias, the dark current density is 1.75 mA/cm2, reducing to 4.9 nA/cm2 at 160 K under −0.25 V. The devices have a saturated room-temperature quantum efficiency of ~36% at $2~mu $ m without an anti-reflective coating, corresponding to a 33% improvement over an earlier design. The RA product is $408~Omega $ cm2 at −0.35 V bias, resulting in a shot-noise limited specific detectivity of $2.28times 10 ^{mathrm {10}}mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ and $1.1times 10 ^{12} mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ at 300 K and 160 K, respectively.
报道了Al0.3InAsSb/Al0.7InAsSb数字合金nBn扩展短波红外探测器。这些器件的室温截止波长为$sim $ 2.3 $mu $ m。变面积二极管分析表明，当器件直径超过$64~mu $ m时，体电流密度占主导地位。在−0.35 V偏置下300 K时，暗电流密度为1.75 mA/cm2，在−0.25 V偏置下160 K时，暗电流密度降至4.9 nA/cm2。该器件的饱和室温量子效率为36% at $2~mu $ m without an anti-reflective coating, corresponding to a 33% improvement over an earlier design. The RA product is $408~Omega $ cm2 at −0.35 V bias, resulting in a shot-noise limited specific detectivity of $2.28times 10 ^{mathrm {10}}mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ and $1.1times 10 ^{12} mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ at 300 K and 160 K, respectively.
{"title":"Extended Short-Wavelength Infrared AlInAsSb nBn Photodetectors","authors":"Kubra Circir;Ellie Y. Wang;J. Andrew McArthur;Daniel Herrera;Seth R. Bank;Joe C. Campbell","doi":"10.1109/JQE.2025.3636522","DOIUrl":"https://doi.org/10.1109/JQE.2025.3636522","url":null,"abstract":"Al0.3InAsSb/Al0.7InAsSb digital alloy nBn extended short-wavelength infrared photodetectors are reported. These devices exhibit a room-temperature cut-off wavelength of <inline-formula> <tex-math>$sim $ </tex-math></inline-formula>2.3 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m. Variable area diode analysis reveals that the bulk current density dominates for device diameters exceeding <inline-formula> <tex-math>$64~mu $ </tex-math></inline-formula>m. At 300 K under −0.35 V bias, the dark current density is 1.75 mA/cm2, reducing to 4.9 nA/cm2 at 160 K under −0.25 V. The devices have a saturated room-temperature quantum efficiency of ~36% at <inline-formula> <tex-math>$2~mu $ </tex-math></inline-formula>m without an anti-reflective coating, corresponding to a 33% improvement over an earlier design. The RA product is <inline-formula> <tex-math>$408~Omega $ </tex-math></inline-formula>cm2 at −0.35 V bias, resulting in a shot-noise limited specific detectivity of <inline-formula> <tex-math>$2.28times 10 ^{mathrm {10}}mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$1.1times 10 ^{12} mathrm {cm}sqrt {mathrm {Hz}} mathrm {/W}$ </tex-math></inline-formula>at 300 K and 160 K, respectively.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 1","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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