A hybrid modulation laser diode integrated with a phase control section between the distributed feedback active section and intra-cavity loss modulation section (PC-HMLD) is proposed. The phase control section enables to control the phase of the light fed back from the intra-cavity loss-modulation section to the distributed feedback active section properly. It was confirmed numerically that the PC-HMLD had a wide intrinsic modulation bandwidth of more than 500 GHz and showed an eye opening for high-speed signals up to 500 Gbit/s. The load resistance dependence of the PC-HMLD’s modulation characteristics were also numerically examined. It was confirmed that eye opening can be expected for up to 500 Gbit/s if the load resistance is reduced to less than $10Omega $ .
{"title":"Intrinsic Modulation Characteristics of Hybrid Modulation Laser Diode With Phase Control Waveguide","authors":"Hiroshi Yasaka;Nobuhide Yokota;Takahiko Shindo;Wataru Kobayashi","doi":"10.1109/JQE.2024.3506392","DOIUrl":"https://doi.org/10.1109/JQE.2024.3506392","url":null,"abstract":"A hybrid modulation laser diode integrated with a phase control section between the distributed feedback active section and intra-cavity loss modulation section (PC-HMLD) is proposed. The phase control section enables to control the phase of the light fed back from the intra-cavity loss-modulation section to the distributed feedback active section properly. It was confirmed numerically that the PC-HMLD had a wide intrinsic modulation bandwidth of more than 500 GHz and showed an eye opening for high-speed signals up to 500 Gbit/s. The load resistance dependence of the PC-HMLD’s modulation characteristics were also numerically examined. It was confirmed that eye opening can be expected for up to 500 Gbit/s if the load resistance is reduced to less than \u0000<inline-formula> <tex-math>$10Omega $ </tex-math></inline-formula>\u0000.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
4H-SiC APDs show excellent characteristics in ultraviolet detection. Requirements have been put forward for quenching circuits in high-performance single photon detection applications. Here, a fast free-running circuit is proposed with passive quenching and active resetting for the 4H-SiC APD, which achieves a 23.8 ns dead time. The detection performance of the 4H-SiC APD under different dead times were studied. The photon detection efficiency and detectable distance increase with the decreasing dead time, remaining the highest at the shortest dead time. A dead time of 23.8 ns, detectable distance of 16.8 m and photon detection efficiency of 15.5% at 275 nm are achieved.
{"title":"Fast Free-Running Circuits for 4H-SiC Avalanche Photodiodes","authors":"Wanwan Xing;Anqi Hu;Hong Song;Yi Zhou;Qiaoli Liu;Xingye Zhou;Xia Guo","doi":"10.1109/JQE.2024.3501195","DOIUrl":"https://doi.org/10.1109/JQE.2024.3501195","url":null,"abstract":"4H-SiC APDs show excellent characteristics in ultraviolet detection. Requirements have been put forward for quenching circuits in high-performance single photon detection applications. Here, a fast free-running circuit is proposed with passive quenching and active resetting for the 4H-SiC APD, which achieves a 23.8 ns dead time. The detection performance of the 4H-SiC APD under different dead times were studied. The photon detection efficiency and detectable distance increase with the decreasing dead time, remaining the highest at the shortest dead time. A dead time of 23.8 ns, detectable distance of 16.8 m and photon detection efficiency of 15.5% at 275 nm are achieved.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-4"},"PeriodicalIF":2.2,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-08DOI: 10.1109/JQE.2024.3494696
Shuqing Deng;Zhen Liu;Yong Huang
Mid-wavelength infrared detectors based on InGaAs/InAsSb superlattices were successfully grown on InAs substrates by metal-organic chemical vapor deposition (MOCVD). AlSb-free InGaAsSb quaternary alloy was employed as the electron barrier layer to reduce the dark current. By comparing the electrical and optical performances of three PNn devices with different Ga compositions in In $_{mathrm {1-x}}$ GaxAs $_{mathrm {1-y}}$ Sby barriers, the optimal Ga composition was found to be 0.3. At 150 K, the dark current density of this device was $1.2 times 10^{-4}$ A/cm2 at -0.1 V. The device operates at zero bias with a 50% cutoff wavelength of $sim 5.1~mu $ m, a peak blackbody responsivity of 1.6 A/W, and a peak specific detectivity of $2.5times 10^{11}~mathrm {cmcdot }sqrt {mathrm {Hz}} mathrm {/W}$ .
采用金属有机化学气相沉积（MOCVD）技术，成功地在InAs衬底上生长了InGaAs/InAsSb超晶格中波长红外探测器。采用不含alsb的InGaAsSb季元合金作为电子阻挡层，以减小暗电流。通过比较in $_{mathrm {1-x}}$ GaxAs $_{mathrm {1-y}}$ By势垒中三种不同Ga成分的PNn器件的电学和光学性能，发现最优Ga成分为0.3。在150 K时，该器件在-0.1 V时的暗电流密度为$1.2 times 10^{-4}$ A/cm2。该装置在零偏下工作，电压为50% cutoff wavelength of $sim 5.1~mu $ m, a peak blackbody responsivity of 1.6 A/W, and a peak specific detectivity of $2.5times 10^{11}~mathrm {cmcdot }sqrt {mathrm {Hz}} mathrm {/W}$ .
{"title":"High-Temperature Mid-Wavelength Infrared Detectors Based on InGaAs/InAsSb Type-II Superlattices With InGaAsSb Barriers","authors":"Shuqing Deng;Zhen Liu;Yong Huang","doi":"10.1109/JQE.2024.3494696","DOIUrl":"https://doi.org/10.1109/JQE.2024.3494696","url":null,"abstract":"Mid-wavelength infrared detectors based on InGaAs/InAsSb superlattices were successfully grown on InAs substrates by metal-organic chemical vapor deposition (MOCVD). AlSb-free InGaAsSb quaternary alloy was employed as the electron barrier layer to reduce the dark current. By comparing the electrical and optical performances of three PNn devices with different Ga compositions in In\u0000<inline-formula> <tex-math>$_{mathrm {1-x}}$ </tex-math></inline-formula>\u0000GaxAs\u0000<inline-formula> <tex-math>$_{mathrm {1-y}}$ </tex-math></inline-formula>\u0000Sby barriers, the optimal Ga composition was found to be 0.3. At 150 K, the dark current density of this device was \u0000<inline-formula> <tex-math>$1.2 times 10^{-4}$ </tex-math></inline-formula>\u0000 A/cm2 at -0.1 V. The device operates at zero bias with a 50% cutoff wavelength of \u0000<inline-formula> <tex-math>$sim 5.1~mu $ </tex-math></inline-formula>\u0000m, a peak blackbody responsivity of 1.6 A/W, and a peak specific detectivity of \u0000<inline-formula> <tex-math>$2.5times 10^{11}~mathrm {cmcdot }sqrt {mathrm {Hz}} mathrm {/W}$ </tex-math></inline-formula>\u0000.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new polarization beam splitter (PBS) based on rectangular core photonic crystal fibers (RC-PCFs) is proposed. Based on the full-vector finite element method, RC-PCFs without holes in the cladding are introduced to improve the design flexibility of multi-core PCF structure. An anisotropic lattice distribution using staggered arrangement of silicon nitride rods and air holes is employed in the core region to increase the birefringence. Optimization of the rectangular core structure is conducted to achieve single-polarization single-mode (SPSM) property. Afterwards, utilizing two SPSM PCFs, in the proposed PBS, two orthogonal polarization waves are only coupled to corresponding PCFs with a device length of $185~mu $ m, and the crosstalk-free PBS is achieved.
{"title":"Design of Polarization Beam Splitter Based on Rectangular Core Photonic Crystal Fiber Without Holes in the Cladding","authors":"Weilong Wang;Taiki Matsuzaki;Shixiao Sun;Zejun Zhang;Akito Iguchi;Yasuhide Tsuji","doi":"10.1109/JQE.2024.3492147","DOIUrl":"https://doi.org/10.1109/JQE.2024.3492147","url":null,"abstract":"A new polarization beam splitter (PBS) based on rectangular core photonic crystal fibers (RC-PCFs) is proposed. Based on the full-vector finite element method, RC-PCFs without holes in the cladding are introduced to improve the design flexibility of multi-core PCF structure. An anisotropic lattice distribution using staggered arrangement of silicon nitride rods and air holes is employed in the core region to increase the birefringence. Optimization of the rectangular core structure is conducted to achieve single-polarization single-mode (SPSM) property. Afterwards, utilizing two SPSM PCFs, in the proposed PBS, two orthogonal polarization waves are only coupled to corresponding PCFs with a device length of \u0000<inline-formula> <tex-math>$185~mu $ </tex-math></inline-formula>\u0000m, and the crosstalk-free PBS is achieved.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-28DOI: 10.1109/JQE.2024.3487502
Muhammad Imran;Iqbal Hussain;Muhammad Usman;Usman Javed;Huanrong Fan;Peng Li;Yibin Tian;Yanpeng Zhang
We report phonon dressing-induced dipole moment alignment of nonpolar ions. Out-of-phase Fluorescence (FL) and in-phase Spontaneous Four-wave Mixing (SFWM) peak alignment are exhibited owing to dressing-assisted fine structure and hyperfine structure crystal field quantization, whereas FL and SFWM dip alignment result from fine structure crystal field and dressing quantization. Moreover, a constant alignment is maintained by adjusting two-dimensional parameters at certain conditions due to level angular momentum quantization. Such investigation can potentially apply to fine/hyperfine structure alignment of nonpolar ions and spectra homogenizers.
{"title":"Phonon Dressing Induced Dipole Moment Alignment of Nonpolar Ions","authors":"Muhammad Imran;Iqbal Hussain;Muhammad Usman;Usman Javed;Huanrong Fan;Peng Li;Yibin Tian;Yanpeng Zhang","doi":"10.1109/JQE.2024.3487502","DOIUrl":"https://doi.org/10.1109/JQE.2024.3487502","url":null,"abstract":"We report phonon dressing-induced dipole moment alignment of nonpolar ions. Out-of-phase Fluorescence (FL) and in-phase Spontaneous Four-wave Mixing (SFWM) peak alignment are exhibited owing to dressing-assisted fine structure and hyperfine structure crystal field quantization, whereas FL and SFWM dip alignment result from fine structure crystal field and dressing quantization. Moreover, a constant alignment is maintained by adjusting two-dimensional parameters at certain conditions due to level angular momentum quantization. Such investigation can potentially apply to fine/hyperfine structure alignment of nonpolar ions and spectra homogenizers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-23DOI: 10.1109/JQE.2024.3485503
Kola Thirupathaiah;Montasir Qasymeh
A new nanoplasmonic directional coupler (DC) is proposed, utilizing a conductor-backed coplanar waveguide (CPW) with a finite width. Our design approach includes first establishing a theoretical transmission-line model for the coupler, and then utilizing the characteristic parameters of related coupled CPW structures for a comprehensive analysis. The provided analysis is conducted through full-wave analysis using a conformal mapping technique (CMT), implemented in CST Microwave Studio Suite CAD simulation software. This article primarily focuses on designing and analyzing the directional coupler using a backed conductor on the dielectric substrate with finite width, applying the transmission line (TL) theory method to achieve a coupling coefficient ( $C_{C}$ ) of 3-dB. The proposed plasmonic coupler operates efficiently at optical frequencies in both the O- and L-bands. Simulations demonstrate that the coupling coefficient of the directional coupler is effectively modulated by varying the width of the backed conductor ( $w_{c}$ ). Consequently, the proposed design surpasses the performance of traditional narrow-bandwidth couplers, offering significant benefits for applications in subwavelength wireless networks and high-density nanoscale photonic integrated circuits (PICs).
我们提出了一种新型纳米光子定向耦合器 (DC)，它利用了宽度有限的导体支撑共面波导 (CPW)。我们的设计方法包括首先建立耦合器的理论传输线模型，然后利用相关耦合 CPW 结构的特征参数进行综合分析。所提供的分析是通过保形映射技术 (CMT) 进行的全波分析，该技术是在 CST Microwave Studio Suite CAD 仿真软件中实现的。本文主要侧重于设计和分析使用有限宽度介质基板上的背衬导体的定向耦合器，并应用传输线（TL）理论方法实现 3 分贝的耦合系数（$C_{C}$）。所提出的等离子体耦合器可在 O 波段和 L 波段的光学频率下高效工作。仿真结果表明，通过改变背向导体的宽度（$w_{c}$），可有效调节定向耦合器的耦合系数。因此，所提出的设计超越了传统窄带耦合器的性能，为亚波长无线网络和高密度纳米级光子集成电路（PIC）的应用提供了显著优势。
{"title":"A Nanoplasmonic Directional Coupler Utilizing a Backed Conductor on Dielectric Substrate With Finite Width","authors":"Kola Thirupathaiah;Montasir Qasymeh","doi":"10.1109/JQE.2024.3485503","DOIUrl":"https://doi.org/10.1109/JQE.2024.3485503","url":null,"abstract":"A new nanoplasmonic directional coupler (DC) is proposed, utilizing a conductor-backed coplanar waveguide (CPW) with a finite width. Our design approach includes first establishing a theoretical transmission-line model for the coupler, and then utilizing the characteristic parameters of related coupled CPW structures for a comprehensive analysis. The provided analysis is conducted through full-wave analysis using a conformal mapping technique (CMT), implemented in CST Microwave Studio Suite CAD simulation software. This article primarily focuses on designing and analyzing the directional coupler using a backed conductor on the dielectric substrate with finite width, applying the transmission line (TL) theory method to achieve a coupling coefficient (\u0000<inline-formula> <tex-math>$C_{C}$ </tex-math></inline-formula>\u0000) of 3-dB. The proposed plasmonic coupler operates efficiently at optical frequencies in both the O- and L-bands. Simulations demonstrate that the coupling coefficient of the directional coupler is effectively modulated by varying the width of the backed conductor (\u0000<inline-formula> <tex-math>$w_{c}$ </tex-math></inline-formula>\u0000). Consequently, the proposed design surpasses the performance of traditional narrow-bandwidth couplers, offering significant benefits for applications in subwavelength wireless networks and high-density nanoscale photonic integrated circuits (PICs).","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A cost-effective linear chirp source is urgently needed in various commercial scenarios. Based on typical coupled mode theory (CMT) and a highly effective split-step time-domain model (SS-TDM) method, the influence of thermal effect on the performance of frequency-modulated continuous-wave (FMCW) signal generated by current-modulated distributed feedback laser diodes (CM-DFB-LDs) is numerically simulated. The results show that the thermal effect in DFB-LDs has a significant impact on the nonlinearity of the FMCW signal, and the increasing thermal effect leads to an enhancement in the nonlinearity of the FMCW signal. For a given thermal diffusion coefficient $D=2.0 ; times 10^{-5}$ m2/s, with the increase of the thickness H between the active region and the substrate from $1.5 ; mu $ m to $6 ; mu $ m, both the bandwidth and the nonlinearity increase gradually at first and then tend towards saturation. For H fixed at $4.5 ; mu $ m, with the increase of D from $1.5 ; times 10^{-5}$ m2/s to $6 ; times 10^{-5}$ m2/s, both the bandwidth and the nonlinearity show a downward trend. For $D = 6.0 ; times 10.5$ m2/s and $H = 4.5 ; mu $ m, a high-quality FMCW signal with a nonlinearity of $3.852 ; times 10^{-5}$ and an root mean square (RMS) of 19.3 MHz under a bandwidth of 19.1 GHz can be obtained. Taking such FMCW signal as a transmitted signal, a 2 m distance ranging has been demonstrated, and the relative error is 0.340%.
在各种商业应用场景中，迫切需要一种经济高效的线性啁啾信号源。基于典型耦合模式理论（CMT）和高效分步时域模型（SS-TDM）方法，数值模拟了热效应对电流调制分布反馈激光二极管（CM-DFB-LD）产生的频率调制连续波（FMCW）信号性能的影响。结果表明，DFB-LD 中的热效应对 FMCW 信号的非线性有显著影响，热效应的增加会导致 FMCW 信号的非线性增强。对于给定的热扩散系数 $D=2.0 ; times 10^{-5}$ m2/s，随着有源区和衬底之间的厚度 H 从 $1.5 ; mu $ m 增加到 $6 ; mu $ m，带宽和非线性度一开始都会逐渐增加，然后趋于饱和。对于 H 固定为 $4.5 ; mu $ m，随着 D 从 $1.5 ; times 10^{-5}$ m2/s 增加到 $6 ; times 10^{-5}$ m2/s，带宽和非线性度都呈现下降趋势。对于 $D = 6.0 ; times 10.5$ m2/s 和 $H = 4.5 ; mu $ m，在 19.1 GHz 的带宽下，可以获得非线性度为 3.852 ; times 10^{-5}$ 和均方根（RMS）为 19.3 MHz 的高质量 FMCW 信号。以这种 FMCW 信号作为传输信号，可以实现 2 米距离的测距，相对误差为 0.340%。
{"title":"Influences of Thermal Effect on the Performance of FMCW Signal Generated by Current-Modulated DFB-LDs","authors":"Qiupin Wang;Guangqiong Xia;Yingke Xie;Pu Ou;Chaotao He;Shan Hu;Fengling Zhang;Maorong Zhao;Zhengmao Wu","doi":"10.1109/JQE.2024.3484250","DOIUrl":"https://doi.org/10.1109/JQE.2024.3484250","url":null,"abstract":"A cost-effective linear chirp source is urgently needed in various commercial scenarios. Based on typical coupled mode theory (CMT) and a highly effective split-step time-domain model (SS-TDM) method, the influence of thermal effect on the performance of frequency-modulated continuous-wave (FMCW) signal generated by current-modulated distributed feedback laser diodes (CM-DFB-LDs) is numerically simulated. The results show that the thermal effect in DFB-LDs has a significant impact on the nonlinearity of the FMCW signal, and the increasing thermal effect leads to an enhancement in the nonlinearity of the FMCW signal. For a given thermal diffusion coefficient \u0000<inline-formula> <tex-math>$D=2.0 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 m2/s, with the increase of the thickness H between the active region and the substrate from \u0000<inline-formula> <tex-math>$1.5 ; mu $ </tex-math></inline-formula>\u0000m to \u0000<inline-formula> <tex-math>$6 ; mu $ </tex-math></inline-formula>\u0000m, both the bandwidth and the nonlinearity increase gradually at first and then tend towards saturation. For H fixed at \u0000<inline-formula> <tex-math>$4.5 ; mu $ </tex-math></inline-formula>\u0000m, with the increase of D from \u0000<inline-formula> <tex-math>$1.5 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 m2/s to \u0000<inline-formula> <tex-math>$6 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 m2/s, both the bandwidth and the nonlinearity show a downward trend. For \u0000<inline-formula> <tex-math>$D = 6.0 ; times 10.5$ </tex-math></inline-formula>\u0000 m2/s and \u0000<inline-formula> <tex-math>$H = 4.5 ; mu $ </tex-math></inline-formula>\u0000m, a high-quality FMCW signal with a nonlinearity of \u0000<inline-formula> <tex-math>$3.852 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 and an root mean square (RMS) of 19.3 MHz under a bandwidth of 19.1 GHz can be obtained. Taking such FMCW signal as a transmitted signal, a 2 m distance ranging has been demonstrated, and the relative error is 0.340%.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142600123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-21DOI: 10.1109/JQE.2024.3484248
Muhsin Caner Gökçe;Yahya Baykal;Hamza Gerçekcioğlu;Yalçın Ata
We utilize the Huygens-Fresnel principle to derive the mutual coherence function (MCF) for a vortex beam, which is the main focus of our investigation. Then, we examine the intensity and modulus of the complex degree of coherence (DOC) characteristics of vortex beams in atmospheric turbulence. Our results indicate that as the topological charge increases, the intensity distribution of the vortex beam becomes less affected by atmospheric turbulence. However, the modulus of the complex DOC decreases.
{"title":"Intensity and Degree of Coherence of Vortex Beams in Atmospheric Turbulence","authors":"Muhsin Caner Gökçe;Yahya Baykal;Hamza Gerçekcioğlu;Yalçın Ata","doi":"10.1109/JQE.2024.3484248","DOIUrl":"https://doi.org/10.1109/JQE.2024.3484248","url":null,"abstract":"We utilize the Huygens-Fresnel principle to derive the mutual coherence function (MCF) for a vortex beam, which is the main focus of our investigation. Then, we examine the intensity and modulus of the complex degree of coherence (DOC) characteristics of vortex beams in atmospheric turbulence. Our results indicate that as the topological charge increases, the intensity distribution of the vortex beam becomes less affected by atmospheric turbulence. However, the modulus of the complex DOC decreases.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Deep-ultraviolet light-emitting diodes (DUV LEDs) are encountering low external quantum efficiency (EQE) and light output power (LOP) due to the strong optical absorption to DUV light and the poor carrier injection efficiency. To solve these issues, we design and optimize a 250 nm DUV LED structure with thin quantum wells and discrete p-type functional layers. The discrete p-type functional layers consist of a high Al composition-gradient layer (layer I) and a low Al composition-gradient layer (layer II). Calculated results indicate that the use of thin quantum wells can rearrange the valence subband distributions to increase the transverse-electric (TE) polarized emission, thereby enhancing light extraction efficiency (LEE). Additionally, the LEE can also be increased by optimizing the thickness of the discrete p-type functional layers, i.e., modulating the optical absorption effect and the optical cavity effect. Meanwhile, we also investigate the impact of different negative polarization bulk charge densities on the electron and hole injections by changing the thickness of layer I and layer II, which can obtain the optimized internal quantum efficiency (IQE) for the 250 nm DUV LED. Therefore, when compared with conventional DUV LEDs, the proposed LED architectures improve the EQE and optical power if the discrete p-type functional layers are properly designed.
深紫外发光二极管（DUV LED）的外部量子效率（EQE）和光输出功率（LOP）较低，这是由于 DUV 光的光吸收强和载流子注入效率低造成的。为了解决这些问题，我们设计并优化了具有薄量子阱和分立 p 型功能层的 250 nm DUV LED 结构。分立 p 型功能层由高铝成分梯度层（层 I）和低铝成分梯度层（层 II）组成。计算结果表明，使用薄量子阱可以重新排列价子带分布，增加横电（TE）极化发射，从而提高光萃取效率（LEE）。此外，还可以通过优化分立 p 型功能层的厚度，即调节光吸收效应和光腔效应来提高萃光效率。同时，我们还通过改变层 I 和层 II 的厚度，研究了不同负极化体电荷密度对电子和空穴注入的影响，从而获得了 250 nm DUV LED 的优化内部量子效率（IQE）。因此，与传统的 DUV LED 相比，如果分立 p 型功能层设计得当，所提出的 LED 架构可提高 EQE 和光功率。
{"title":"Numerical Modeling for 250 nm DUV LEDs With Discrete p-type Functional Layers to Manage Both Carrier and Photon Transport","authors":"Wenjie Li;Zhaoqiang Liu;Chunshuang Chu;Kangkai Tian;Haoyan Liu;Yonghui Zhang;Changsheng Xia;Xiaowei Sun;Zi-Hui Zhang","doi":"10.1109/JQE.2024.3478089","DOIUrl":"https://doi.org/10.1109/JQE.2024.3478089","url":null,"abstract":"Deep-ultraviolet light-emitting diodes (DUV LEDs) are encountering low external quantum efficiency (EQE) and light output power (LOP) due to the strong optical absorption to DUV light and the poor carrier injection efficiency. To solve these issues, we design and optimize a 250 nm DUV LED structure with thin quantum wells and discrete p-type functional layers. The discrete p-type functional layers consist of a high Al composition-gradient layer (layer I) and a low Al composition-gradient layer (layer II). Calculated results indicate that the use of thin quantum wells can rearrange the valence subband distributions to increase the transverse-electric (TE) polarized emission, thereby enhancing light extraction efficiency (LEE). Additionally, the LEE can also be increased by optimizing the thickness of the discrete p-type functional layers, i.e., modulating the optical absorption effect and the optical cavity effect. Meanwhile, we also investigate the impact of different negative polarization bulk charge densities on the electron and hole injections by changing the thickness of layer I and layer II, which can obtain the optimized internal quantum efficiency (IQE) for the 250 nm DUV LED. Therefore, when compared with conventional DUV LEDs, the proposed LED architectures improve the EQE and optical power if the discrete p-type functional layers are properly designed.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-07DOI: 10.1109/JQE.2024.3475745
Aleksandr Zozulia;Richard Schatz;Samir Rihani;Graham Berry;Kevin Williams;Yuqing Jiao
InP membrane directly modulated semiconductor lasers (DMLs) with photon-photon resonance (PPR) have a lot of potential to be used in short-range telecommunication systems due to their small footprint, high energy efficiency, and high modulation bandwidth. However, the stability of the S21 response in PPR-based devices is sensitive to precise phase-matching between the lasing mode and PPR mode. We designed, fabricated, measured, and analyzed a C-band DML with active phase-tuning achieved by a thermal phase shifter on top of a long passive waveguide. The phase shifter enables tuning of the PPR frequency in the range of 5 GHz resulting in the PPR peak power enhancement of 16 dB. We study the small-signal responses at different combinations of bias current and phase shifter current and show, that in some cases the phase shifter enables a bandwidth that cannot be achieved by sweeping the bias current. The laser dynamic behavior is simulated and the influence of the most important design and processing parameters on bandwidth is studied in detail.
{"title":"C-Band Directly Modulated Lasers With Tunable Photon–Photon Resonance in InP Membrane","authors":"Aleksandr Zozulia;Richard Schatz;Samir Rihani;Graham Berry;Kevin Williams;Yuqing Jiao","doi":"10.1109/JQE.2024.3475745","DOIUrl":"https://doi.org/10.1109/JQE.2024.3475745","url":null,"abstract":"InP membrane directly modulated semiconductor lasers (DMLs) with photon-photon resonance (PPR) have a lot of potential to be used in short-range telecommunication systems due to their small footprint, high energy efficiency, and high modulation bandwidth. However, the stability of the S21 response in PPR-based devices is sensitive to precise phase-matching between the lasing mode and PPR mode. We designed, fabricated, measured, and analyzed a C-band DML with active phase-tuning achieved by a thermal phase shifter on top of a long passive waveguide. The phase shifter enables tuning of the PPR frequency in the range of 5 GHz resulting in the PPR peak power enhancement of 16 dB. We study the small-signal responses at different combinations of bias current and phase shifter current and show, that in some cases the phase shifter enables a bandwidth that cannot be achieved by sweeping the bias current. The laser dynamic behavior is simulated and the influence of the most important design and processing parameters on bandwidth is studied in detail.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-12"},"PeriodicalIF":2.2,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10706920","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142450918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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