Pub Date : 2025-07-28DOI: 10.1109/JQE.2025.3593150
Wei-Hao Huang;Cheng-Chun Chen;Ji-Yao Shan;Kai-Lun Chi;Tien-Chang Lu
This report investigates 940 nm vertical-cavity surface-emitting lasers (VCSELs) with three-junction (3J) designs under various pulsed driving conditions, focusing on the influence of oxide layer configurations on electrical and optical performance. Heat accumulation is a critical issue in VCSEL operation; therefore, reducing pulse width effectively minimizes heat generation. This not only enhances the thermal characteristics of the devices but also suppresses lateral carrier diffusion—particularly important in longer resonant cavity structures such as multi-junction VCSELs. At room temperature, a 3J 940 nm VCSEL with a $10mu $ m oxide aperture driven by 2 ns pulses achieved a slope efficiency (SE) of 3.2 W/A using a three-layer oxide structure, compared to 2.37 W/A for a single-layer oxide design. Both devices exhibited a red spectral shift of less than 1 nm, corresponding to a temperature rise below $12~^{circ }$ C, indicating improved thermal management. Notably, a unique behavior was observed in the three-oxide-layer 3J VCSEL: as the injection current increased, the beam divergence angle decreased from 17° to 5°. These findings highlight the advantages of multi-junction VCSELs with optimized oxide designs, demonstrating their potential for future high-performance sensing applications.
{"title":"Effects of Multiple Oxide Layers in Multi-Junction VCSELs Under Different Pulse Conditions","authors":"Wei-Hao Huang;Cheng-Chun Chen;Ji-Yao Shan;Kai-Lun Chi;Tien-Chang Lu","doi":"10.1109/JQE.2025.3593150","DOIUrl":"https://doi.org/10.1109/JQE.2025.3593150","url":null,"abstract":"This report investigates 940 nm vertical-cavity surface-emitting lasers (VCSELs) with three-junction (3J) designs under various pulsed driving conditions, focusing on the influence of oxide layer configurations on electrical and optical performance. Heat accumulation is a critical issue in VCSEL operation; therefore, reducing pulse width effectively minimizes heat generation. This not only enhances the thermal characteristics of the devices but also suppresses lateral carrier diffusion—particularly important in longer resonant cavity structures such as multi-junction VCSELs. At room temperature, a 3J 940 nm VCSEL with a <inline-formula> <tex-math>$10mu $ </tex-math></inline-formula> m oxide aperture driven by 2 ns pulses achieved a slope efficiency (SE) of 3.2 W/A using a three-layer oxide structure, compared to 2.37 W/A for a single-layer oxide design. Both devices exhibited a red spectral shift of less than 1 nm, corresponding to a temperature rise below <inline-formula> <tex-math>$12~^{circ }$ </tex-math></inline-formula>C, indicating improved thermal management. Notably, a unique behavior was observed in the three-oxide-layer 3J VCSEL: as the injection current increased, the beam divergence angle decreased from 17° to 5°. These findings highlight the advantages of multi-junction VCSELs with optimized oxide designs, demonstrating their potential for future high-performance sensing applications.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3582130
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2025.3582130","DOIUrl":"https://doi.org/10.1109/JQE.2025.3582130","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"C3-C3"},"PeriodicalIF":2.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11095970","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3583096
John M. Dallesasse
{"title":"Editorial JQE 60th Anniversary: The 80’s","authors":"John M. Dallesasse","doi":"10.1109/JQE.2025.3583096","DOIUrl":"https://doi.org/10.1109/JQE.2025.3583096","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-2"},"PeriodicalIF":2.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11095905","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3587556
{"title":"Electrooptical Effects in Silicon","authors":"","doi":"10.1109/JQE.2025.3587556","DOIUrl":"https://doi.org/10.1109/JQE.2025.3587556","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3592448
Vinit Kumar;Ajit Kumar;Rupam Srivastava;Anuj K. Sharma;Yogendra Kumar Prajapati
This research investigates the integration of photonic spin-orbit interaction (SOI) with plasmonic phenomenon using Barium Titanate (BaTiO3) as the active material. A remarkable transverse spin-dependent shift (SDS) of $838~boldsymbol {mu }mathbf {m}$ is demonstrated—approximately 28 times larger than that observed in conventional plasmonic material such as silver (Ag). The study further explores the interplay between the enhanced electric field and spin-dependent splitting under resonance conditions, revealing that the resonance angle is strongly influenced by both SDS magnitude and field enhancement. Leveraging this enhanced spin-based interaction, we demonstrate the potential for quantum-enabled optical device design, including an optical differentiator and a high-sensitivity sensor. The proposed differentiator structure exhibits a power weight of 414.96 for the co-polarized (V–V) component and 0.35 for the cross-polarized (V–H/H–V) component. Moreover, the photonic spin-based sensor architecture achieves a sensitivity enhancement of $sim~52times $ compared to a standard plasmonic system at a refractive index of 1.33. These findings establish BaTiO3-integrated plasmonic platforms as promising candidates for advanced spin-based photonic devices in the realm of quantum technologies.
{"title":"High Magnitude Spin-Dependent Shift and Field Enhancement in BaTiO3-Based Plasmonics for Quantum Photonic Applications","authors":"Vinit Kumar;Ajit Kumar;Rupam Srivastava;Anuj K. Sharma;Yogendra Kumar Prajapati","doi":"10.1109/JQE.2025.3592448","DOIUrl":"https://doi.org/10.1109/JQE.2025.3592448","url":null,"abstract":"This research investigates the integration of photonic spin-orbit interaction (SOI) with plasmonic phenomenon using Barium Titanate (BaTiO3) as the active material. A remarkable transverse spin-dependent shift (SDS) of <inline-formula> <tex-math>$838~boldsymbol {mu }mathbf {m}$ </tex-math></inline-formula> is demonstrated—approximately 28 times larger than that observed in conventional plasmonic material such as silver (Ag). The study further explores the interplay between the enhanced electric field and spin-dependent splitting under resonance conditions, revealing that the resonance angle is strongly influenced by both SDS magnitude and field enhancement. Leveraging this enhanced spin-based interaction, we demonstrate the potential for quantum-enabled optical device design, including an optical differentiator and a high-sensitivity sensor. The proposed differentiator structure exhibits a power weight of 414.96 for the co-polarized (V–V) component and 0.35 for the cross-polarized (V–H/H–V) component. Moreover, the photonic spin-based sensor architecture achieves a sensitivity enhancement of <inline-formula> <tex-math>$sim~52times $ </tex-math></inline-formula> compared to a standard plasmonic system at a refractive index of 1.33. These findings establish BaTiO3-integrated plasmonic platforms as promising candidates for advanced spin-based photonic devices in the realm of quantum technologies.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3592472
Smriti Baruah;Janmoni Borah;Santanu Maity
Future developments in perovskite solar cells (PSCs) focuses on lead-free versions because of their lower toxicity. However, lead-free PSCs’ limited Power Conversion Efficiency (PCE) compared to their lead-based counterparts prevents them from being used more widely. This issue can be successfully resolved with the multi-absorber approach since it maximizes the use of the solar spectrum. Therefore, this article incorporates numerical modeling guided optimization of a lead free all inorganic ITO/ETL/CsSnI3/CsSnCl3/HTL dual absorbers-based heterojunction structure to improve the performance of Cesium Tin Iodide (CsSnI3) and Cesium Tin Chloride (CsSnCl3) based single absorber PSCs. The critical device’s parameters, such as absorber layer and carrier transport layer thickness, defect density, temperature, doping concentration, series and shunt resistances are thoroughly optimized and evaluated using Solar cell capacitance simulator (SCAPS-1D). The proposed dual absorber composition produces a substantial enhancement in performance with PCE ($eta $ ) of 24%, Short Circuit Current ($J_{mathrm {sc}}$ ) of 28.5 mA/cm2, Open Circuit Voltage ($V_{mathrm {oc}}$ ) of 0.96 V, and Field Factor (FF) of 85.87% at a device defect density of $10^{15}$ cm−3 outperforming the 12.96% and 9.66% of PCE attained with the reported CsSnI3 and CsSnCl3 single junction counterparts.
{"title":"Device Engineering of a New Lead Free All Inorganic CsSnI₃/CsSnCl₃-Based Graded Perovskite Absorber Structure for High Performance Solar Cell","authors":"Smriti Baruah;Janmoni Borah;Santanu Maity","doi":"10.1109/JQE.2025.3592472","DOIUrl":"https://doi.org/10.1109/JQE.2025.3592472","url":null,"abstract":"Future developments in perovskite solar cells (PSCs) focuses on lead-free versions because of their lower toxicity. However, lead-free PSCs’ limited Power Conversion Efficiency (PCE) compared to their lead-based counterparts prevents them from being used more widely. This issue can be successfully resolved with the multi-absorber approach since it maximizes the use of the solar spectrum. Therefore, this article incorporates numerical modeling guided optimization of a lead free all inorganic ITO/ETL/CsSnI3/CsSnCl3/HTL dual absorbers-based heterojunction structure to improve the performance of Cesium Tin Iodide (CsSnI3) and Cesium Tin Chloride (CsSnCl3) based single absorber PSCs. The critical device’s parameters, such as absorber layer and carrier transport layer thickness, defect density, temperature, doping concentration, series and shunt resistances are thoroughly optimized and evaluated using Solar cell capacitance simulator (SCAPS-1D). The proposed dual absorber composition produces a substantial enhancement in performance with PCE (<inline-formula> <tex-math>$eta $ </tex-math></inline-formula>) of 24%, Short Circuit Current (<inline-formula> <tex-math>$J_{mathrm {sc}}$ </tex-math></inline-formula>) of 28.5 mA/cm2, Open Circuit Voltage (<inline-formula> <tex-math>$V_{mathrm {oc}}$ </tex-math></inline-formula>) of 0.96 V, and Field Factor (FF) of 85.87% at a device defect density of <inline-formula> <tex-math>$10^{15}$ </tex-math></inline-formula> cm−3 outperforming the 12.96% and 9.66% of PCE attained with the reported CsSnI3 and CsSnCl3 single junction counterparts.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 2","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146162210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/JQE.2025.3587557
{"title":"Theory of the Linewidth of Semiconductor Lasers","authors":"","doi":"10.1109/JQE.2025.3587557","DOIUrl":"https://doi.org/10.1109/JQE.2025.3587557","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-23DOI: 10.1109/JQE.2025.3591762
Jonathan Schuster;Daniel B. Habersat;Franklin L. Nouketcha;Brenda L. VanMil;Jeremy L. Smith;Gregory A. Garrett;Michael A. Derenge;Tilak Hewagama;Shahid Aslam;Dina M. Bower;Anand V. Sampath;Michael Wraback
Near-ultraviolet (NUV) Geiger-mode avalanche photodiodes (NUV-GM-APD) require high unity-gain quantum efficiency (QE), while operating above avalanche breakdown. 4H-SiC has long been established as a proven GM-APD in the UV-C (<280> $lt 3~mu $ m thick) to a separate-absorption charge-multiplication (SACM) architecture. However, using a SACM architecture to improve the NUV unity-gain QE has unique challenges: including deviating from existing front-side absorber SACM architectures to a very thick backside one. This is further compounded when binary semiconductor materials are used (e.g., 4H-SiC) instead of alloyed heterostructures (e.g., InGaP or HgCdTe), removing what is arguably the most versatile design parameter, the mole fraction of the alloy. To overcome these challenges, we have implemented a numerical model with a calibrated 4H-SiC material library for the development of APDs and leveraged it to design NUV-enhanced SACM structures, where both non-reach-through (NRT) and reach-through (RT) architectures have been considered. For the NRT-SACM case, it was determined that the doping profiles must be engineered such that two competing mechanisms are balanced: maximizing the minority carrier diffusion length in the absorber layer (AL, longest at lower AL doping), while minimizing the corresponding potential barrier at the AL/charge layer (CL) interface (lowest at higher AL doping). Conversely, in a RT-SACM architecture, it was determined that a narrow range of total charge in the CL properly modulated the electric field to be non-zero in the AL and sufficiently large in the multiplication layer (ML) to operate above avalanche breakdown. As such, it was determined that the CL design is exceptionally intolerant to variations in either layer thickness or doping. Leveraging design rules learned and reported in this paper, we have designed both types of SACM architectures: NRT-SACM APDs and RT-SACM APDs, with unity gain QE at 340 nm up to 32% and 71% respectively, while maintaining a large electric field in the ML required for Geiger-mode operation.
{"title":"Design Challenges in Binary 4H-SiC NUV-Enhanced SACM APDs","authors":"Jonathan Schuster;Daniel B. Habersat;Franklin L. Nouketcha;Brenda L. VanMil;Jeremy L. Smith;Gregory A. Garrett;Michael A. Derenge;Tilak Hewagama;Shahid Aslam;Dina M. Bower;Anand V. Sampath;Michael Wraback","doi":"10.1109/JQE.2025.3591762","DOIUrl":"https://doi.org/10.1109/JQE.2025.3591762","url":null,"abstract":"Near-ultraviolet (NUV) Geiger-mode avalanche photodiodes (NUV-GM-APD) require high unity-gain quantum efficiency (QE), while operating above avalanche breakdown. 4H-SiC has long been established as a proven GM-APD in the UV-C (<280> <tex-math>$lt 3~mu $ </tex-math></inline-formula>m thick) to a separate-absorption charge-multiplication (SACM) architecture. However, using a SACM architecture to improve the NUV unity-gain QE has unique challenges: including deviating from existing front-side absorber SACM architectures to a very thick backside one. This is further compounded when binary semiconductor materials are used (e.g., 4H-SiC) instead of alloyed heterostructures (e.g., InGaP or HgCdTe), removing what is arguably the most versatile design parameter, the mole fraction of the alloy. To overcome these challenges, we have implemented a numerical model with a calibrated 4H-SiC material library for the development of APDs and leveraged it to design NUV-enhanced SACM structures, where both non-reach-through (NRT) and reach-through (RT) architectures have been considered. For the NRT-SACM case, it was determined that the doping profiles must be engineered such that two competing mechanisms are balanced: maximizing the minority carrier diffusion length in the absorber layer (AL, longest at lower AL doping), while minimizing the corresponding potential barrier at the AL/charge layer (CL) interface (lowest at higher AL doping). Conversely, in a RT-SACM architecture, it was determined that a narrow range of total charge in the CL properly modulated the electric field to be non-zero in the AL and sufficiently large in the multiplication layer (ML) to operate above avalanche breakdown. As such, it was determined that the CL design is exceptionally intolerant to variations in either layer thickness or doping. Leveraging design rules learned and reported in this paper, we have designed both types of SACM architectures: NRT-SACM APDs and RT-SACM APDs, with unity gain QE at 340 nm up to 32% and 71% respectively, while maintaining a large electric field in the ML required for Geiger-mode operation.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-11"},"PeriodicalIF":2.1,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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