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IEEE Journal of Quantum Electronics information for authors IEEE 期刊《量子电子学》为作者提供的信息
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-03-26 DOI: 10.1109/JQE.2024.3379795
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引用次数: 0
Spectrally Pure W-Band RF Carrier Generation with Packaged Silicon Photonics Circuit 利用封装硅光子电路生成光谱纯净的 W 波段射频载波
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-03-21 DOI: 10.1109/jqe.2024.3380552
Claudio Porzi, Marco Chiesa, Alessandra Bigongiari, Aina Serrano Rodrigo, Marc Sorel, Luca Roselli, Antonio D’Errico, Antonella Bogoni, Antonio Malacarne
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引用次数: 0
Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron 亚微米级倍增宽度的 InGaAs/InP 单光子雪崩二极管分析
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-03-09 DOI: 10.1109/JQE.2024.3399176
Kai Qiao;Yu Chang;Zefang Xu;Fei Yin;Liyu Liu;Jieying Wang;Chang Su;Linmeng Xu;Mengyan Fang;Chunliang Liu;Jinshou Tian;Xing Wang
InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting single-photon in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection and ranging(LIDAR). The effect of multiplication layer width on the performance of SPADs in both linear and Geiger mode have been theoretically studied. Three-types of InGaAs/InP planer SPADs with different multiplication width are fabricated and evaluated. The results of this study suggest that modifying the width of the multiplication layer can regulate the breakdown voltage, punch-through voltage, and dark current of the device. It is found that the measured time jitter is decreasing with the reduction of the width of the multiplication region. These characteristics can be used to optimize the temporal resolution of SPADs device.
InGaAs/InP 单光子雪崩光电二极管(SPADs)能够探测近红外光谱中的单光子,可用于量子通信、荧光寿命成像和光探测与测距(LIDAR)等应用。我们从理论上研究了乘法层宽度对线性和盖革模式 SPAD 性能的影响。研究人员制作并评估了三种不同倍增层宽度的 InGaAs/InP 平面 SPAD。研究结果表明,改变倍增层的宽度可以调节器件的击穿电压、击穿电压和暗电流。研究还发现,随着倍增区域宽度的减小,测得的时间抖动也在减小。这些特性可用于优化 SPAD 器件的时间分辨率。
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引用次数: 0
1 × 4 Integrated Microlenses High-Rate Photodetector Array for Optical Communication Transmission 用于光通信传输的 1×4 集成微透镜高速率光电探测器阵列
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-03-08 DOI: 10.1109/JQE.2024.3374126
Xiaowei Yang;Weifang Yuan;Xiaofeng Duan;Xianjie Li;Kai Liu;Yongqing Huang
Toward the application of 400 G optical receiver chips in optical communication systems, this paper presents a $1times 4$ photodetector (PD) array with a monolithic integrated InP microlenses structure. The absorption layer of the PD array in question includes the non-depleted, partially depleted, and depleted regions. This third-order composite absorber layer accelerates the diffusion of electrons in the absorber layer and balances the transport times of holes and electrons. Therefore, the high-speed and high responsivity characteristics of the device can be realized. The integration of InP microlenses on the backside of the PD allows the effective photosensitive surface area to be increased and the incident light alignment deviation to be compensated. Tests yielded a 3-dB bandwidth of the PD array at 1310 nm greater than 40 GHz, with a peak responsivity of 0.64 A/W. The responsivity of two types of PDs was measured when incident at a distance of $10~mu text{m}$ away from the main optical axis. The responsivity of the integrated microlenses decreased to 67.05% of the maximum value. Compared to the device without integrated microlenses, the responsivity increased by 66.76%.
为了在光通信系统中应用 400 G 光接收器芯片,本文提出了一种具有单片集成 InP 微透镜结构的 1/times 4$ 光电探测器(PD)阵列。该 PD 阵列的吸收层包括非耗尽区、部分耗尽区和耗尽区。这种三阶复合吸收层可加速电子在吸收层中的扩散,并平衡空穴和电子的传输时间。因此,该器件的高速和高响应特性得以实现。在 PD 背面集成 InP 微透镜可以增加有效光敏表面积,并补偿入射光的对准偏差。测试结果表明,1310 纳米波长的光致发光器件阵列的 3 分贝带宽大于 40 GHz,峰值响应率为 0.64 A/W。在距离主光轴 10~mu text{m}$的距离入射时,测量了两种类型光致发光器件的响应率。集成微透镜的响应率下降到最大值的 67.05%。与没有集成微透镜的器件相比,响应率提高了 66.76%。
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引用次数: 0
Photovoltaic Modulating Retroreflectors for Low Power Consumption Free Space Optical Communication Systems 用于低功耗自由空间光通信系统的光电调制逆反射器
IF 2.2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-03-07 DOI: 10.1109/JQE.2024.3374101
Benjamin C. Maglio;Crisanto Quintana;Yoann Thueux;Peter M. Smowton
An InGaAs-InAsP-GaInP asymmetric stepped quantum well structure is proposed for unbiased detection and subsequent modulation of an incident continuous wave optical signal for application in compact, retroreflective, free-space optical communication platforms. Such operation drastically reduces onboard power consumption in large-area, pixelated arrays by driving only optically activated pixels. A modelling routine involving calculations of band structure, fraction of light absorbed, and responsivity have been used to analyse structures exhibiting an asymmetric quantum confined Stark effect. The proposed structure, compared with devices following similar modeling approaches, is predicted to exhibit an unbiased responsivity of 0.004 A/W enabling single pixel detection prior to triggering modulation. The calculated photocurrent of $4~mu $ A offers adequate signal to noise against dark current when operated in a photovoltaic mode. Furthermore, the strong blueshift in the ground state transition energy calculated for the applied field results in extinction ratios in excess of 4dB for the modulated signal. These findings suggest performance enhancements at a fraction of current onboard power consumption in modulating retroreflectors for compact, free-space optical communication platforms.
本文提出了一种 InGaAs-InAsP-GaInP 非对称阶梯量子阱结构,用于入射连续波光信号的无偏检测和后续调制,可应用于紧凑型逆反射自由空间光通信平台。通过仅驱动光激活像素,这种操作大大降低了大面积像素阵列的板载功耗。通过对带状结构、光吸收比例和响应率的计算,我们利用建模程序对表现出非对称量子约束斯塔克效应的结构进行了分析。根据预测,与采用类似建模方法的器件相比,拟议的结构可显示出 0.004 A/W 的无偏响应率,从而在触发调制之前实现单像素检测。计算得出的光电流为 4~mu $ A,在光电模式下工作时,可提供足够的暗电流信噪比。此外,针对应用场计算出的基态转换能量的强蓝移导致调制信号的消光比超过 4dB。这些发现表明,在用于紧凑型自由空间光通信平台的调制反向反射器中,只需消耗目前板载功耗的一小部分就能提高性能。
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引用次数: 0
Two-section passively Mode-locked laser as a test for amplification and absorption parameters of a quantum well based InP optical amplifier at 1300 nm 测试基于量子阱的 InP 光放大器在 1300 纳米波长的放大和吸收参数的两段无源模式锁定激光器
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-03-05 DOI: 10.1109/jqe.2024.3372583
J. Hazan, S. Tondini, A. Nassar, K.A. Williams, E.A.J.M. Bente
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引用次数: 0
Complex Pulse Profile Optimization by Chromatic Dispersion Management in Coupled Opto-Electronic Oscillator Based on Semiconductor Optical Amplifier 通过基于半导体光放大器的耦合光电振荡器中的色散管理优化复杂脉冲轮廓
IF 2.2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-03-04 DOI: 10.1109/JQE.2024.3372575
Alexis Bougaud;Arnaud Fernandez;Aliou Ly;Stéphane Balac;Olivier Llopis
An Ikeda map iterative numerical model completed with an analytical Gaussian analysis and experimental measurements of complex pulse profile and phase noise performance at 10 GHz are proposed. This work aims to study and optimize the chromatic dispersion of a fibered mode-locked laser (MLL) based on a semiconductor optical amplifier (SOA) as part of a coupled optoelectronic oscillator (COEO). We will demonstrate that a close to zero anomalous dispersion regime is preferred as it allows the generation of optical picosecond pulses with minimum full width at half maximum (FWHM) and maximizes the absolute value of chirp and peak power. This guarantees the generation of narrow and diffraction-limited optical pulses after the chromatic dispersion compensating stage prior photodetection in order to lower the phase noise of the microwave signal generated at 10 GHz but also for high-order microwave harmonics synthesis.
本文提出了一个池田图迭代数值模型,并对 10 GHz 的复杂脉冲轮廓和相位噪声性能进行了分析性高斯分析和实验测量。这项工作旨在研究和优化基于半导体光放大器(SOA)的光纤锁模激光器(MLL)的色度色散,作为耦合光电振荡器(COEO)的一部分。我们将证明,接近零的反常色散机制是首选,因为它可以产生半最大全宽(FWHM)最小的皮秒脉冲,并使啁啾绝对值和峰值功率最大化。这就保证了在光电探测之前的色度色散补偿阶段之后产生窄且衍射受限的光脉冲,以降低 10 GHz 频率下产生的微波信号的相位噪声,同时也可用于高阶微波谐波合成。
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引用次数: 0
98 fs High Energy Stable Hybrid Mode-Locked Nonlinear Polarization Rotation With CuO-Doped ZnO Saturable Absorber 98 fs 高能稳定混合模式锁定非线性极化旋转与氧化铜掺杂氧化锌可饱和吸收体
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-03-03 DOI: 10.1109/JQE.2024.3396425
H. Ahmad;M. A. M. Lutfi;M. Z. Samion;M. K. A. Zaini;N. Yusoff
The investigation of a fiber laser utilizing ytterbium-doped hybrid passively mode-locking, featuring a novel copper oxide-doped zinc oxide saturable absorber (CuO-ZnO SA), has been realized. The hybrid mode-locked (hybrid-ML) fiber laser integrates the nonlinear polarization rotation (NPR) technology with the CuO-ZnO-SA, producing remarkable characteristics with a central wavelength of 1045 nm, a 3-dB bandwidth spanning 18.26 nm, an ultra-short pulse width of 98 fs, a repetition frequency of 1.96 MHz, and an impressive signal-to-noise ratio of 51 dB. This research demonstrates a substantial enhancement in laser performance compared to NPR mode-locking alone. Notably, the pulse width experiences a significant compression, reduced by 39 fs, while the signal-to-noise ratio sees a noteworthy improvement of 11 dB. Furthermore, when contrasted with passively mode-locked pulse lasers relying solely on NPR technology, the hybrid passively mode-locked fiber laser attains a substantial reduction in output pulse width, surpassing 98 fs. These findings show the significant potential of the hybrid-ML system in the realm of ultrafast lasers, offering a promising avenue for future applications in cutting-edge research and technology.
研究人员利用新型氧化铜掺氧化锌可饱和吸收体(CuO-ZnO SA)实现了掺镱混合被动锁模光纤激光器。这种混合锁模(hybrid-ML)光纤激光器集成了非线性偏振旋转(NPR)技术和氧化铜-氧化锌可饱和吸收体(CuO-ZnO-SA),具有中心波长 1045 nm、3 dB 带宽 18.26 nm、超短脉冲宽度 98 fs、重复频率 1.96 MHz 和令人印象深刻的 51 dB 信噪比等显著特点。这项研究表明,与单独的 NPR 模式锁定相比,激光器的性能有了大幅提升。值得注意的是,脉冲宽度大幅压缩,减少了 39 fs,而信噪比则显著提高了 11 dB。此外,与完全依赖 NPR 技术的被动模式锁定脉冲激光器相比,混合被动模式锁定光纤激光器的输出脉冲宽度大幅缩短,超过了 98 fs。这些研究结果表明,混合 ML 系统在超快激光领域具有巨大潜力,为未来在尖端研究和技术领域的应用提供了广阔前景。
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引用次数: 0
Modeling the 3-Micron Class Er-Doped Fluoride Fiber Laser With a Cubic Energy Transfer Rate Dependence 建模 3 微米级掺铒氟化物光纤激光器的立方能量传输速率依赖性
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-03-01 DOI: 10.1109/JQE.2024.3372580
William Bisson;Alexandre Michaud;Pascal Paradis;Réal Vallée;Martin Bernier
We propose an energy transfer model with a cubic atomic population dependence to accurately model the behavior of various reported high-power erbium-doped fluoride fiber lasers operating near 2.8 microns. We first show that the previously introduced weakly interacting (WI) and strongly interacting (SI) models are not adequate for precisely modeling such high-power erbium-doped fluoride fiber lasers. We compare results obtained with the WI and SI models to the proposed model by simulating 4 different highly doped (7 mol.%) fiber lasers previously reported in the literature. Laser efficiencies and powers are reproduced with great accuracy. In addition, four other fiber laser systems based on erbium concentrations varying from 1–6 mol.% are also simulated with good accuracy using the proposed model with the exact same set of spectroscopic parameters, which confirms its validity for various erbium doping concentrations. Redshifting of laser wavelength is also taken into account by considering the full cross section spectra and computing signal powers over several wavelength channels.
我们提出了一种具有立方原子群依赖性的能量传递模型,以精确模拟各种已报道的在 2.8 微米附近工作的高功率掺铒氟化物光纤激光器的行为。我们首先表明,之前引入的弱相互作用(WI)和强相互作用(SI)模型不足以精确模拟此类大功率掺铒氟化物光纤激光器。我们通过模拟先前在文献中报道的 4 种不同的高掺杂(7 mol.%)光纤激光器,将 WI 和 SI 模型获得的结果与所提出的模型进行了比较。激光效率和功率都得到了非常精确的再现。此外,使用所提出的模型和完全相同的光谱参数集,还精确地模拟了铒浓度为 1-6 摩尔%的其他四种光纤激光器系统,这证实了该模型对各种铒掺杂浓度的有效性。通过考虑全截面光谱和计算多个波长通道的信号功率,还考虑了激光波长的红移。
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引用次数: 0
High Sensitivity Characteristics of Tapered Fiber Plasmon Sensor With Gold Nanoparticles in 1500 nm Wavelength Band 带有金纳米粒子的锥形光纤等离子体传感器在 1500 纳米波段的高灵敏度特性
IF 2.5 3区 工程技术 Q2 Engineering Pub Date : 2024-02-22 DOI: 10.1109/JQE.2024.3366468
Masahiro Yamamoto;Tianpeng Ji;Aya Miyazaki;Yuichi Matsushima;Hiroshi Ishikawa;Katsuyuki Utaka
A tapered fiber plasmon sensor with a tip angle of about 30 degrees was fabricated to realize optical absorption and application to an optical sensor using localized plasmon in the 1500 nm wavelength band. The sharp tip angle of a single-mode fiber (SMF) was well controlled by using a highly GeO2-doped single-mode fiber (SMF) and optimizing the etching conditions with buffered fluoric acid. Gold nanoparticles (Au-NPs) with a diameter of 40 nm were deposited by treating the surface of a tipped SMF with silane coupling. The relationship between Au NPs deposition time and deposition ratio was studied to control Au NPs distribution and pursue higher sensitivities. The wavelength sensitivity of 662 nm/RIU was expected at Au NPs deposition ratio of 34.9 % in the analysis, and actually a high sensitivity of 677 nm/RIU at 35.3 % was experimentally demonstrated.
为了实现光吸收并将其应用于利用 1500 nm 波段局部等离子体的光学传感器,我们制作了一种尖端角度约为 30 度的锥形光纤等离子体传感器。通过使用高度掺杂 GeO2 的单模光纤(SMF)并优化缓冲氟酸的蚀刻条件,单模光纤(SMF)的尖角得到了很好的控制。通过硅烷偶联剂处理有尖端的单模光纤表面,沉积了直径为 40 nm 的金纳米粒子(Au-NPs)。研究了金纳米粒子沉积时间与沉积比例之间的关系,以控制金纳米粒子的分布,追求更高的灵敏度。分析结果表明,金氧化物沉积比率为 34.9% 时,波长灵敏度预计为 662 nm/RIU,而实验结果表明,金氧化物沉积比率为 35.3% 时,灵敏度高达 677 nm/RIU。
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引用次数: 0
期刊
IEEE Journal of Quantum Electronics
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