Pub Date : 2025-10-31DOI: 10.1109/JQE.2025.3627887
Yalçın Ata;Kamran Kiasaleh
Recently, quantum key distribution (QKD) has emerged as a prominent solution to provide secure and reliable communication in atmosphere. This paper investigates the effect of pointing error on the performance of QKD communication systems. The analytical solution of error and sift probabilities, quantum bit error rate (QBER) and secret key rate (SKR) are obtained depending on pointing error effect that is modeled by Rayleigh and Hoyt distributions. Our findings show that the increased beam waist, hence the increased pointing error, degrades the performance of QKD communication systems remarkably. Also, the symmetric pointing error, where horizontal and vertical pointing errors are equal, yields worse performance for QKD systems as compared to the asymmetric pointing error case where vertical and horizontal pointing errors are different. The undeniable effect of pointing error on the performance of QKD system highlights the importance of precise beam alignment to minimize the adverse effects of pointing errors, thereby ensuring the secure and efficient operation of QKD systems in various deployment scenarios.
{"title":"Pointing Error Influence on Quantum Key Distribution","authors":"Yalçın Ata;Kamran Kiasaleh","doi":"10.1109/JQE.2025.3627887","DOIUrl":"https://doi.org/10.1109/JQE.2025.3627887","url":null,"abstract":"Recently, quantum key distribution (QKD) has emerged as a prominent solution to provide secure and reliable communication in atmosphere. This paper investigates the effect of pointing error on the performance of QKD communication systems. The analytical solution of error and sift probabilities, quantum bit error rate (QBER) and secret key rate (SKR) are obtained depending on pointing error effect that is modeled by Rayleigh and Hoyt distributions. Our findings show that the increased beam waist, hence the increased pointing error, degrades the performance of QKD communication systems remarkably. Also, the symmetric pointing error, where horizontal and vertical pointing errors are equal, yields worse performance for QKD systems as compared to the asymmetric pointing error case where vertical and horizontal pointing errors are different. The undeniable effect of pointing error on the performance of QKD system highlights the importance of precise beam alignment to minimize the adverse effects of pointing errors, thereby ensuring the secure and efficient operation of QKD systems in various deployment scenarios.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-9"},"PeriodicalIF":2.1,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-30DOI: 10.1109/JQE.2025.3618135
{"title":"IEEE Journal of Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JQE.2025.3618135","DOIUrl":"https://doi.org/10.1109/JQE.2025.3618135","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"C3-C3"},"PeriodicalIF":2.1,"publicationDate":"2025-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11222770","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
InGaAs/InP single-photon avalanche photodiode (SPAD) with a triple-step diffusion morphology is designed and fabricated. The avalanche probability distribution evolves from a toroidal shape to a Gaussian-like shape as compared with the conventional double-step diffusion. Free-running measurements indicate that the photon detection efficiency of the triple-step SPAD increases from 3.4% to 11% in comparison with a double-step SPAD with the same thickness of the avalanche region and under the same conditions. Meanwhile, the dark count rate (DCR) and the afterpulsing probability (APP) are also decreased from 820 to 25 kHz and from 80% to 43% under a hold-off time of $8~mu $ s, respectively. Consistently higher activation energies of both the dark current and the DCR are obtained for the triple-step SPAD, tentatively attributed to the evolvement of the dominant source of dark carriers from the thermal generation in the InGaAs absorber to the trap-assisted tunneling in the InP multiplier. Theoretical simulations indicate a faster detrapping time of carriers within the avalanche region accounts for the reduced APP for the triple-step SPAD with a higher peak E-field.
{"title":"Planar InGaAs/InP Avalanche Photodiode With a Triple-Step Diffusion Junction","authors":"Qiong Wu;Yingjie Ma;Jingxian Bao;Liyi Yang;Shuangyan Deng;Yiwei He;Yueqi Zhai;Qinfei Xu;Junliang Liu;Lixia Zheng;Xue Li","doi":"10.1109/JQE.2025.3624349","DOIUrl":"https://doi.org/10.1109/JQE.2025.3624349","url":null,"abstract":"InGaAs/InP single-photon avalanche photodiode (SPAD) with a triple-step diffusion morphology is designed and fabricated. The avalanche probability distribution evolves from a toroidal shape to a Gaussian-like shape as compared with the conventional double-step diffusion. Free-running measurements indicate that the photon detection efficiency of the triple-step SPAD increases from 3.4% to 11% in comparison with a double-step SPAD with the same thickness of the avalanche region and under the same conditions. Meanwhile, the dark count rate (DCR) and the afterpulsing probability (APP) are also decreased from 820 to 25 kHz and from 80% to 43% under a hold-off time of <inline-formula> <tex-math>$8~mu $ </tex-math></inline-formula>s, respectively. Consistently higher activation energies of both the dark current and the DCR are obtained for the triple-step SPAD, tentatively attributed to the evolvement of the dominant source of dark carriers from the thermal generation in the InGaAs absorber to the trap-assisted tunneling in the InP multiplier. Theoretical simulations indicate a faster detrapping time of carriers within the avalanche region accounts for the reduced APP for the triple-step SPAD with a higher peak E-field.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2025-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-03DOI: 10.1109/JQE.2025.3617332
Hamed Saghaei;Kambiz Moez
In this paper, we present the design, simulation, fabrication, and characterization of a high-performance all-optical filter. It consists of three cascaded microring resonators and four integrated grating couplers, developed for precise wavelength selection within the telecom band (1500–1600 nm). The device was fabricated on a silicon-on-insulator platform using high-resolution electron beam lithography and encapsulated with a silica cladding layer to enhance mechanical robustness and increase the effective refractive index, resulting in superior optical performance. A fundamental aspect of the proposed design is systematic geometrical tailoring of critical parameters, including ring radius, waveguide width, coupling gap, coupling length, and the number of cascaded resonators, to allow precise control over the filter’s spectral characteristics. The fabricated filter achieves an ultra-narrow passband of 1.99 nm, a resonance power transfer efficiency exceeding 56%, and a Q-factor up to 804. The free spectral range (FSR) is shown to be design-dependent, varying between 27 nm and 37 nm as a function of ring radius, thus enabling flexible specification during the design phase. Experimental characterization using tunable lasers showed strong agreement with finite-difference time-domain simulations, validating the filter design. Extensive parametric studies were conducted to evaluate the influence of structural variations on key performance metrics, including resonance wavelength, Q-factor, transmission efficiency, and FSR. The proposed filter demonstrates outstanding spectral resolution, low insertion loss, and excellent efficiency, establishing it as a promising solution for advanced optical communications, high-precision photonic signal processing, and emerging nanophotonic systems.
{"title":"High-Performance SOI-Based Filter With Multiple Microring Resonators for Telecom Applications: Design, Fabrication, and Characterization","authors":"Hamed Saghaei;Kambiz Moez","doi":"10.1109/JQE.2025.3617332","DOIUrl":"https://doi.org/10.1109/JQE.2025.3617332","url":null,"abstract":"In this paper, we present the design, simulation, fabrication, and characterization of a high-performance all-optical filter. It consists of three cascaded microring resonators and four integrated grating couplers, developed for precise wavelength selection within the telecom band (1500–1600 nm). The device was fabricated on a silicon-on-insulator platform using high-resolution electron beam lithography and encapsulated with a silica cladding layer to enhance mechanical robustness and increase the effective refractive index, resulting in superior optical performance. A fundamental aspect of the proposed design is systematic geometrical tailoring of critical parameters, including ring radius, waveguide width, coupling gap, coupling length, and the number of cascaded resonators, to allow precise control over the filter’s spectral characteristics. The fabricated filter achieves an ultra-narrow passband of 1.99 nm, a resonance power transfer efficiency exceeding 56%, and a Q-factor up to 804. The free spectral range (FSR) is shown to be design-dependent, varying between 27 nm and 37 nm as a function of ring radius, thus enabling flexible specification during the design phase. Experimental characterization using tunable lasers showed strong agreement with finite-difference time-domain simulations, validating the filter design. Extensive parametric studies were conducted to evaluate the influence of structural variations on key performance metrics, including resonance wavelength, Q-factor, transmission efficiency, and FSR. The proposed filter demonstrates outstanding spectral resolution, low insertion loss, and excellent efficiency, establishing it as a promising solution for advanced optical communications, high-precision photonic signal processing, and emerging nanophotonic systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-13"},"PeriodicalIF":2.1,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145449343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report, for the first time, a monolithic multi-wavelength passively mode-locked distributed feedback (DFB) laser operating simultaneously at four wavelengths near $1.55~mu $ m. The device incorporates two chirped sampled Bragg grating (SBG) designs within a single cavity: 1) chirped conventional SBG (C-SBG) and 2) chirped four-phase-shifted SBG (4PS-SBG). Both configurations achieve uniform 0.96 nm (~120 GHz) wavelength spacing using a single DFB section electrode and monolithically integrated saturable absorber (SA) for synchronized passive mode-locking. This shared-cavity architecture ensures intrinsic stability of the frequency comb against environmental perturbations, as all longitudinal modes experience identical phase variations. The lasers exhibit high spectral purity with side-mode suppression ratios (SMSR) >20 dB, with the 4PS-SBG design offering wider bias current operation. Pulse characteristics include near-transform-limited performance for both designs: C-SBG yields 2.84 ps pulses (time-bandwidth product [TBP] = 0.334), while 4PS-SBG generates 2.79 ps pulses (TBP = 0.337). Fabrication employs a simplified ridge waveguide sidewall grating approach requiring only one metalorganic vapor phase epitaxy (MOVPE) step and a single III–V etch process, enhancing manufacturability. We further demonstrate the design’s versatility by extending operation to six wavelengths using the 4PS-SBG structure. This integrated platform shows strong potential for dense wavelength division multiplexing (DWDM), coherent communications, and photonic sensing applications requiring compact, environmentally stable multi-wavelength sources.
{"title":"Monolithic Multi-Wavelength Mode-Locked DFB Laser Using Chirped Conventional and Four-Phase-Shifted Sampled Bragg Gratings","authors":"Mohanad Al-Rubaiee;Yizhe Fan;Bocheng Yuan;Yiming Sun;Simeng Zhu;Ahmet Seckin;Zhefan Wang;Xiao Sun;John Marsh;Stephen J. Sweeney;Lianping Hou","doi":"10.1109/JQE.2025.3616281","DOIUrl":"https://doi.org/10.1109/JQE.2025.3616281","url":null,"abstract":"We report, for the first time, a monolithic multi-wavelength passively mode-locked distributed feedback (DFB) laser operating simultaneously at four wavelengths near <inline-formula> <tex-math>$1.55~mu $ </tex-math></inline-formula>m. The device incorporates two chirped sampled Bragg grating (SBG) designs within a single cavity: 1) chirped conventional SBG (C-SBG) and 2) chirped four-phase-shifted SBG (4PS-SBG). Both configurations achieve uniform 0.96 nm (~120 GHz) wavelength spacing using a single DFB section electrode and monolithically integrated saturable absorber (SA) for synchronized passive mode-locking. This shared-cavity architecture ensures intrinsic stability of the frequency comb against environmental perturbations, as all longitudinal modes experience identical phase variations. The lasers exhibit high spectral purity with side-mode suppression ratios (SMSR) >20 dB, with the 4PS-SBG design offering wider bias current operation. Pulse characteristics include near-transform-limited performance for both designs: C-SBG yields 2.84 ps pulses (time-bandwidth product [TBP] = 0.334), while 4PS-SBG generates 2.79 ps pulses (TBP = 0.337). Fabrication employs a simplified ridge waveguide sidewall grating approach requiring only one metalorganic vapor phase epitaxy (MOVPE) step and a single III–V etch process, enhancing manufacturability. We further demonstrate the design’s versatility by extending operation to six wavelengths using the 4PS-SBG structure. This integrated platform shows strong potential for dense wavelength division multiplexing (DWDM), coherent communications, and photonic sensing applications requiring compact, environmentally stable multi-wavelength sources.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-10"},"PeriodicalIF":2.1,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145449337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-29DOI: 10.1109/JQE.2025.3615507
Santosh V. Patil;Kshitij Bhargava
Although still a long way from achieving a similar commercial success, recent results have made perovskite photovoltaics (PPVs) emerge as the most promising alternative to silicon PVs. The material properties of various layers constituting a cell are quite critical for their performance. In this report, we investigate the impact of material parameters namely thickness, defect, and doping concentration on performance of cell using SCAPS-1D. Further, we extend the analysis to grid-connected PV system using PVsyst. We observe that material parameters have severe impact on both cell power conversion efficiency (PCE) as well as the performance ratio (PR${}_{mathbf {avg}}$ ) and output energy generation (E${}_{mathbf {grid}}$ ). The performance of cell optimized in terms of thickness, defect, and doping of various layers yield V${}_{mathbf {oc}}$ J${}_{mathbf {sc}}$ FF, and PCE as 1.17 V, 22.9 mA/cm ${}^{mathbf {2}}~84.1$ %, and 22.54% respectively. Moreover, PR ${}_{mathbf {avg}}$ and E ${}_{mathbf {grid}}$ of system configured using optimized cell metrics are quite encouraging as 86.1% and 255.4 MWh/yr. Furthermore, we analyze the impact of absorber layer mobility variability on performance reproducibility of optimized cell and system. The calculated mean value of PCE, PR${}_{mathrm {avg}}$ , and E${}_{mathrm {grid}}$ are 22.51%, 86.3%, and 255.9 MWh/yr respectively with respective standard deviation as 0.056%, 0.5%, and 1.8 MWh/yr against mobility of ($1.82~pm ~0.59$ ) cm${}^{mathbf {2}}$ /V-s. Lastly, we observe that net CO${}_{mathbf {2}}$ emission saving of the optimized PV system is 7171.4 tones. The results will be of great interest and motivation to researchers, manufacturers and environmentalists devoted to the development of the next generation PPV systems.
{"title":"Unravelling the Impact of Material Parameters on Performance of Perovskite Photovoltaics Through Multiscale Simulations","authors":"Santosh V. Patil;Kshitij Bhargava","doi":"10.1109/JQE.2025.3615507","DOIUrl":"https://doi.org/10.1109/JQE.2025.3615507","url":null,"abstract":"Although still a long way from achieving a similar commercial success, recent results have made perovskite photovoltaics (PPVs) emerge as the most promising alternative to silicon PVs. The material properties of various layers constituting a cell are quite critical for their performance. In this report, we investigate the impact of material parameters namely thickness, defect, and doping concentration on performance of cell using SCAPS-1D. Further, we extend the analysis to grid-connected PV system using PVsyst. We observe that material parameters have severe impact on both cell power conversion efficiency (PCE) as well as the performance ratio (PR<inline-formula> <tex-math>${}_{mathbf {avg}}$ </tex-math></inline-formula>) and output energy generation (E<inline-formula> <tex-math>${}_{mathbf {grid}}$ </tex-math></inline-formula>). The performance of cell optimized in terms of thickness, defect, and doping of various layers yield V<inline-formula> <tex-math>${}_{mathbf {oc}}$ </tex-math></inline-formula> J<inline-formula> <tex-math>${}_{mathbf {sc}}$ </tex-math></inline-formula> FF, and PCE as 1.17 V, 22.9 mA/cm <inline-formula> <tex-math>${}^{mathbf {2}}~84.1$ </tex-math></inline-formula>%, and 22.54% respectively. Moreover, PR <inline-formula> <tex-math>${}_{mathbf {avg}}$ </tex-math></inline-formula> and E <inline-formula> <tex-math>${}_{mathbf {grid}}$ </tex-math></inline-formula> of system configured using optimized cell metrics are quite encouraging as 86.1% and 255.4 MWh/yr. Furthermore, we analyze the impact of absorber layer mobility variability on performance reproducibility of optimized cell and system. The calculated mean value of PCE, PR<inline-formula> <tex-math>${}_{mathrm {avg}}$ </tex-math></inline-formula>, and E<inline-formula> <tex-math>${}_{mathrm {grid}}$ </tex-math></inline-formula> are 22.51%, 86.3%, and 255.9 MWh/yr respectively with respective standard deviation as 0.056%, 0.5%, and 1.8 MWh/yr against mobility of (<inline-formula> <tex-math>$1.82~pm ~0.59$ </tex-math></inline-formula>) cm<inline-formula> <tex-math>${}^{mathbf {2}}$ </tex-math></inline-formula>/V-s. Lastly, we observe that net CO<inline-formula> <tex-math>${}_{mathbf {2}}$ </tex-math></inline-formula>emission saving of the optimized PV system is 7171.4 tones. The results will be of great interest and motivation to researchers, manufacturers and environmentalists devoted to the development of the next generation PPV systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-10"},"PeriodicalIF":2.1,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145449330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Grating couplers (GCs) are extensively employed in silicon photonics platforms as the I/O interfaces for data transmission between the chips and fiber systems. Perfectly vertical grating couplers (PVGCs) can further enhance optical packaging convenience and increase the spatial I/O density of optical links. In this study, we present an inverse design approach to develop high-performance PVGCs on a 220 nm silicon-on-insulator (SOI) platform. The gratings are designed for fabrication via a 70 nm shallow etch lithography step, ensuring compatibility with the standard multi-project wafer (MPW) runs. Through adjoint optimization, the PVGC achieves a simulated coupling efficiency of −2.4 dB at 1550 nm, with a 3 dB bandwidth of 40 nm. Experimental results show a peak coupling efficiency of −3.98 dB and a 3 dB bandwidth of 35 nm. To further broaden the bandwidth, a bidirectional perfectly vertical grating coupler (BPVGC) was designed using a similar optimization approach. Simulations predict a coupling efficiency of −1.95 dB at 1550 nm, featuring a relatively flat transmission spectrum and a 3 dB bandwidth of 96 nm. This work provides a practical pathway for the design of efficient on-chip interfaces.
{"title":"Inverse Design of Efficient Perfectly Vertical Grating Couplers on 220-nm SOI Platform Based on Adjoint Optimization","authors":"Guangbiao Zhong;Haoda Xu;Ruitao Zhang;Zhe Kang;Yegang Lu;Huihong Zhang;Ye Tian","doi":"10.1109/JQE.2025.3613264","DOIUrl":"https://doi.org/10.1109/JQE.2025.3613264","url":null,"abstract":"Grating couplers (GCs) are extensively employed in silicon photonics platforms as the I/O interfaces for data transmission between the chips and fiber systems. Perfectly vertical grating couplers (PVGCs) can further enhance optical packaging convenience and increase the spatial I/O density of optical links. In this study, we present an inverse design approach to develop high-performance PVGCs on a 220 nm silicon-on-insulator (SOI) platform. The gratings are designed for fabrication via a 70 nm shallow etch lithography step, ensuring compatibility with the standard multi-project wafer (MPW) runs. Through adjoint optimization, the PVGC achieves a simulated coupling efficiency of −2.4 dB at 1550 nm, with a 3 dB bandwidth of 40 nm. Experimental results show a peak coupling efficiency of −3.98 dB and a 3 dB bandwidth of 35 nm. To further broaden the bandwidth, a bidirectional perfectly vertical grating coupler (BPVGC) was designed using a similar optimization approach. Simulations predict a coupling efficiency of −1.95 dB at 1550 nm, featuring a relatively flat transmission spectrum and a 3 dB bandwidth of 96 nm. This work provides a practical pathway for the design of efficient on-chip interfaces.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-5"},"PeriodicalIF":2.1,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145449318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Oxide-confined vertical-cavity surface-emitting lasers (VCSELs) operating from 2.6 to 295 K are investigated to establish reliable thermal design guidelines for cryogenic photonic interconnects. Lasing-wavelength shifts due to self-heating are converted to an effective cavity temperature through calibrated spectral thermometry. The 3D finite-element VCSEL model of semiconductor and oxide nanoscale layers is developed to solve the nonlinear heat-conduction equation with thermal conductivities dependent on temperature, material composition, and doping. The combined 3D modeling-and-measurement framework provides a predictive tool for engineering next-generation cryogenic VCSELs with reduced self-heating and improved reliability in high-speed superconducting computing links.
{"title":"Laser Cavity-Temperature and 3D Nonlinear Thermal Model of VCSEL From 2.6 to 130 K","authors":"Haonan Wu;Wenning Fu;Yulin He;Zetai Liu;Milton Feng","doi":"10.1109/JQE.2025.3612272","DOIUrl":"https://doi.org/10.1109/JQE.2025.3612272","url":null,"abstract":"Oxide-confined vertical-cavity surface-emitting lasers (VCSELs) operating from 2.6 to 295 K are investigated to establish reliable thermal design guidelines for cryogenic photonic interconnects. Lasing-wavelength shifts due to self-heating are converted to an effective cavity temperature through calibrated spectral thermometry. The 3D finite-element VCSEL model of semiconductor and oxide nanoscale layers is developed to solve the nonlinear heat-conduction equation with thermal conductivities dependent on temperature, material composition, and doping. The combined 3D modeling-and-measurement framework provides a predictive tool for engineering next-generation cryogenic VCSELs with reduced self-heating and improved reliability in high-speed superconducting computing links.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-12"},"PeriodicalIF":2.1,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11173636","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145449338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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