In this work we numerically analyze a photonic unconventional accelerator based on the four-wave mixing effect in highly nonlinear waveguides. The proposed scheme can act as a fully analogue system for nonlinear signal processing directly in the optical domain. By exploiting the rich Kerr-induced nonlinearities, multiple nonlinear transformations of an input signal can be generated and used for solving complex nonlinear tasks. We first evaluate the performance of our scheme in the Santa-Fe chaotic time-series prediction. The true power of this processor is revealed in the all-optical nonlinearity compensation in an optical communication scenario where we provide results superior to those offered by strong machine learning algorithms with reduced power consumption and computational complexity. Finally, we showcase how the FWM module can be used as a reconfigurable nonlinear activation module being capable of reproducing characteristic functions such as sigmoid or rectified linear unit.
{"title":"Unconventional Computing Based on Four Wave Mixing in Highly Nonlinear Waveguides","authors":"Kostas Sozos;Stavros Deligiannidis;Charis Mesaritakis;Adonis Bogris","doi":"10.1109/JQE.2024.3405826","DOIUrl":"10.1109/JQE.2024.3405826","url":null,"abstract":"In this work we numerically analyze a photonic unconventional accelerator based on the four-wave mixing effect in highly nonlinear waveguides. The proposed scheme can act as a fully analogue system for nonlinear signal processing directly in the optical domain. By exploiting the rich Kerr-induced nonlinearities, multiple nonlinear transformations of an input signal can be generated and used for solving complex nonlinear tasks. We first evaluate the performance of our scheme in the Santa-Fe chaotic time-series prediction. The true power of this processor is revealed in the all-optical nonlinearity compensation in an optical communication scenario where we provide results superior to those offered by strong machine learning algorithms with reduced power consumption and computational complexity. Finally, we showcase how the FWM module can be used as a reconfigurable nonlinear activation module being capable of reproducing characteristic functions such as sigmoid or rectified linear unit.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141165599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-26DOI: 10.1109/JQE.2024.3379795
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2024.3379795","DOIUrl":"https://doi.org/10.1109/JQE.2024.3379795","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10480291","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140309980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1109/jqe.2024.3380552
Claudio Porzi, Marco Chiesa, Alessandra Bigongiari, Aina Serrano Rodrigo, Marc Sorel, Luca Roselli, Antonio D’Errico, Antonella Bogoni, Antonio Malacarne
{"title":"Spectrally Pure W-Band RF Carrier Generation with Packaged Silicon Photonics Circuit","authors":"Claudio Porzi, Marco Chiesa, Alessandra Bigongiari, Aina Serrano Rodrigo, Marc Sorel, Luca Roselli, Antonio D’Errico, Antonella Bogoni, Antonio Malacarne","doi":"10.1109/jqe.2024.3380552","DOIUrl":"https://doi.org/10.1109/jqe.2024.3380552","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140200379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-09DOI: 10.1109/JQE.2024.3399176
Kai Qiao;Yu Chang;Zefang Xu;Fei Yin;Liyu Liu;Jieying Wang;Chang Su;Linmeng Xu;Mengyan Fang;Chunliang Liu;Jinshou Tian;Xing Wang
InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting single-photon in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection and ranging(LIDAR). The effect of multiplication layer width on the performance of SPADs in both linear and Geiger mode have been theoretically studied. Three-types of InGaAs/InP planer SPADs with different multiplication width are fabricated and evaluated. The results of this study suggest that modifying the width of the multiplication layer can regulate the breakdown voltage, punch-through voltage, and dark current of the device. It is found that the measured time jitter is decreasing with the reduction of the width of the multiplication region. These characteristics can be used to optimize the temporal resolution of SPADs device.
{"title":"Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron","authors":"Kai Qiao;Yu Chang;Zefang Xu;Fei Yin;Liyu Liu;Jieying Wang;Chang Su;Linmeng Xu;Mengyan Fang;Chunliang Liu;Jinshou Tian;Xing Wang","doi":"10.1109/JQE.2024.3399176","DOIUrl":"10.1109/JQE.2024.3399176","url":null,"abstract":"InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting single-photon in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection and ranging(LIDAR). The effect of multiplication layer width on the performance of SPADs in both linear and Geiger mode have been theoretically studied. Three-types of InGaAs/InP planer SPADs with different multiplication width are fabricated and evaluated. The results of this study suggest that modifying the width of the multiplication layer can regulate the breakdown voltage, punch-through voltage, and dark current of the device. It is found that the measured time jitter is decreasing with the reduction of the width of the multiplication region. These characteristics can be used to optimize the temporal resolution of SPADs device.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140925814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Toward the application of 400 G optical receiver chips in optical communication systems, this paper presents a $1times 4$ photodetector (PD) array with a monolithic integrated InP microlenses structure. The absorption layer of the PD array in question includes the non-depleted, partially depleted, and depleted regions. This third-order composite absorber layer accelerates the diffusion of electrons in the absorber layer and balances the transport times of holes and electrons. Therefore, the high-speed and high responsivity characteristics of the device can be realized. The integration of InP microlenses on the backside of the PD allows the effective photosensitive surface area to be increased and the incident light alignment deviation to be compensated. Tests yielded a 3-dB bandwidth of the PD array at 1310 nm greater than 40 GHz, with a peak responsivity of 0.64 A/W. The responsivity of two types of PDs was measured when incident at a distance of $10~mu text{m}$ away from the main optical axis. The responsivity of the integrated microlenses decreased to 67.05% of the maximum value. Compared to the device without integrated microlenses, the responsivity increased by 66.76%.
{"title":"1 × 4 Integrated Microlenses High-Rate Photodetector Array for Optical Communication Transmission","authors":"Xiaowei Yang;Weifang Yuan;Xiaofeng Duan;Xianjie Li;Kai Liu;Yongqing Huang","doi":"10.1109/JQE.2024.3374126","DOIUrl":"10.1109/JQE.2024.3374126","url":null,"abstract":"Toward the application of 400 G optical receiver chips in optical communication systems, this paper presents a \u0000<inline-formula> <tex-math>$1times 4$ </tex-math></inline-formula>\u0000 photodetector (PD) array with a monolithic integrated InP microlenses structure. The absorption layer of the PD array in question includes the non-depleted, partially depleted, and depleted regions. This third-order composite absorber layer accelerates the diffusion of electrons in the absorber layer and balances the transport times of holes and electrons. Therefore, the high-speed and high responsivity characteristics of the device can be realized. The integration of InP microlenses on the backside of the PD allows the effective photosensitive surface area to be increased and the incident light alignment deviation to be compensated. Tests yielded a 3-dB bandwidth of the PD array at 1310 nm greater than 40 GHz, with a peak responsivity of 0.64 A/W. The responsivity of two types of PDs was measured when incident at a distance of \u0000<inline-formula> <tex-math>$10~mu text{m}$ </tex-math></inline-formula>\u0000 away from the main optical axis. The responsivity of the integrated microlenses decreased to 67.05% of the maximum value. Compared to the device without integrated microlenses, the responsivity increased by 66.76%.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140076302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-07DOI: 10.1109/JQE.2024.3374101
Benjamin C. Maglio;Crisanto Quintana;Yoann Thueux;Peter M. Smowton
An InGaAs-InAsP-GaInP asymmetric stepped quantum well structure is proposed for unbiased detection and subsequent modulation of an incident continuous wave optical signal for application in compact, retroreflective, free-space optical communication platforms. Such operation drastically reduces onboard power consumption in large-area, pixelated arrays by driving only optically activated pixels. A modelling routine involving calculations of band structure, fraction of light absorbed, and responsivity have been used to analyse structures exhibiting an asymmetric quantum confined Stark effect. The proposed structure, compared with devices following similar modeling approaches, is predicted to exhibit an unbiased responsivity of 0.004 A/W enabling single pixel detection prior to triggering modulation. The calculated photocurrent of $4~mu $ A offers adequate signal to noise against dark current when operated in a photovoltaic mode. Furthermore, the strong blueshift in the ground state transition energy calculated for the applied field results in extinction ratios in excess of 4dB for the modulated signal. These findings suggest performance enhancements at a fraction of current onboard power consumption in modulating retroreflectors for compact, free-space optical communication platforms.
{"title":"Photovoltaic Modulating Retroreflectors for Low Power Consumption Free Space Optical Communication Systems","authors":"Benjamin C. Maglio;Crisanto Quintana;Yoann Thueux;Peter M. Smowton","doi":"10.1109/JQE.2024.3374101","DOIUrl":"10.1109/JQE.2024.3374101","url":null,"abstract":"An InGaAs-InAsP-GaInP asymmetric stepped quantum well structure is proposed for unbiased detection and subsequent modulation of an incident continuous wave optical signal for application in compact, retroreflective, free-space optical communication platforms. Such operation drastically reduces onboard power consumption in large-area, pixelated arrays by driving only optically activated pixels. A modelling routine involving calculations of band structure, fraction of light absorbed, and responsivity have been used to analyse structures exhibiting an asymmetric quantum confined Stark effect. The proposed structure, compared with devices following similar modeling approaches, is predicted to exhibit an unbiased responsivity of 0.004 A/W enabling single pixel detection prior to triggering modulation. The calculated photocurrent of \u0000<inline-formula> <tex-math>$4~mu $ </tex-math></inline-formula>\u0000 A offers adequate signal to noise against dark current when operated in a photovoltaic mode. Furthermore, the strong blueshift in the ground state transition energy calculated for the applied field results in extinction ratios in excess of 4dB for the modulated signal. These findings suggest performance enhancements at a fraction of current onboard power consumption in modulating retroreflectors for compact, free-space optical communication platforms.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140076168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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