Pub Date : 2024-10-08DOI: 10.1109/TMTT.2024.3464429
{"title":"Blank Page","authors":"","doi":"10.1109/TMTT.2024.3464429","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3464429","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"72 10","pages":"C4-C4"},"PeriodicalIF":4.1,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10709639","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-08DOI: 10.1109/TMTT.2024.3464431
{"title":"IEEE Transactions on Microwave Theory and Techniques Information for Authors","authors":"","doi":"10.1109/TMTT.2024.3464431","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3464431","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"72 10","pages":"C3-C3"},"PeriodicalIF":4.1,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10709377","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-08DOI: 10.1109/TMTT.2024.3466589
{"title":"IEEE Open Access Publishing","authors":"","doi":"10.1109/TMTT.2024.3466589","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3466589","url":null,"abstract":"","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"72 10","pages":"6200-6200"},"PeriodicalIF":4.1,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10709382","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-03DOI: 10.1109/TMTT.2024.3465932
Kenan Xie;Rundi Wu;Fanyi Meng;Kaixue Ma;Kiat Seng Yeo;Keping Wang
This article presents a two-way current-combining Ka-band power amplifier (PA) in a 130-nm SiGe BiCMOS process. A two-way power-combining network composed of sandwiched-coupler-balun (SCB) and folded-T-line (also known as meander line) is utilized to realize low-loss broadband large-signal impedance matching under a high impedance transformation ratio. Parallel peaking inductance is also employed in the cascode amplifiers to improve the power gain and efficiency, and the quality factor (Q factor) of the peaking inductance is considered during the design process. The symmetrical interstage matching network (ISMN) between the driver and two output stages (OAs) is utilized to improve large-signal performance under broadband operation. The measurement result shows that the proposed PA has a peak small-signal gain of 30.5 dB at 34.8 GHz and a 3-dB bandwidth of 10 GHz (31–41 GHz). At 35 GHz, the PA achieves a 23.5-dBm Psat with 33.9% peak power added efficiency (PAE) and 22.2-dBm OP1dB. Across 31–39 GHz, the Psat and peak PAE of the PA remain 22.7–23.8 dBm and 24.5%–33.9%, respectively. For modulated signal tests, this PA demonstrates −25.4-/ −26.1-/−25.4-dB rms error vector magnitude (EVM) and −25.3-/−27.5-/−25.3-dBc adjacent-channel power leakage ratio (ACLR) at 35/37/39 GHz with a 250-MSym/s 64-quadratic-amplitude modulation (QAM) signal, and it also demonstrates −25.3-/−25.1-/−25.3-dB rms EVM and −26.3-/−27.7-/−27.1-dBc ACLR at 35/37/39 GHz with a 400-MSym/s 64-QAM signal.
{"title":"Design and Analysis of Ka-Band Power Amplifier With Sandwiched-Coupler-Balun and Folded-T-Line Power Combiner","authors":"Kenan Xie;Rundi Wu;Fanyi Meng;Kaixue Ma;Kiat Seng Yeo;Keping Wang","doi":"10.1109/TMTT.2024.3465932","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3465932","url":null,"abstract":"This article presents a two-way current-combining Ka-band power amplifier (PA) in a 130-nm SiGe BiCMOS process. A two-way power-combining network composed of sandwiched-coupler-balun (SCB) and folded-T-line (also known as meander line) is utilized to realize low-loss broadband large-signal impedance matching under a high impedance transformation ratio. Parallel peaking inductance is also employed in the cascode amplifiers to improve the power gain and efficiency, and the quality factor (Q factor) of the peaking inductance is considered during the design process. The symmetrical interstage matching network (ISMN) between the driver and two output stages (OAs) is utilized to improve large-signal performance under broadband operation. The measurement result shows that the proposed PA has a peak small-signal gain of 30.5 dB at 34.8 GHz and a 3-dB bandwidth of 10 GHz (31–41 GHz). At 35 GHz, the PA achieves a 23.5-dBm Psat with 33.9% peak power added efficiency (PAE) and 22.2-dBm OP1dB. Across 31–39 GHz, the Psat and peak PAE of the PA remain 22.7–23.8 dBm and 24.5%–33.9%, respectively. For modulated signal tests, this PA demonstrates −25.4-/ −26.1-/−25.4-dB rms error vector magnitude (EVM) and −25.3-/−27.5-/−25.3-dBc adjacent-channel power leakage ratio (ACLR) at 35/37/39 GHz with a 250-MSym/s 64-quadratic-amplitude modulation (QAM) signal, and it also demonstrates −25.3-/−25.1-/−25.3-dB rms EVM and −26.3-/−27.7-/−27.1-dBc ACLR at 35/37/39 GHz with a 400-MSym/s 64-QAM signal.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"144-155"},"PeriodicalIF":4.1,"publicationDate":"2024-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-01DOI: 10.1109/TMTT.2024.3462972
Hong-Yeh Chang;Liang-Yu Chen;Po-Yuan Chen
This article presents the design and analysis of a Ka-band advanced in-phase and quadrature (I/Q) modulator using a 90-nm CMOS process. To achieve a subharmonic number of up to 15 while maintaining good quadrature accuracy, a cascaded subharmonically injection-locked frequency multiplier (SILFM) chain, incorporating a frequency-tracking loop (FTL) and differential injection, is employed in the local oscillation (LO) generation for the proposed I/Q modulator. Accurate modulation quality is ensured by performing vector modulation through four reflection-type modulators. The design methodology of the cascaded SILFM, along with theoretical results, is presented, focusing on locking range, quadrature accuracy with injection, phase noise, and jitter. The SILFM consumes a total dc power of 74 mW and features a measured locking range from 27 to 28.7 GHz, a minimum phase noise of −122.8 dBc/Hz at a 1-MHz offset, and an rms jitter of 27.5 fs integrated from 1 kHz to 40 MHz. In addition, the proposed I/Q modulator demonstrates superior performance up to 1024 quadrature amplitude modulation (1024-QAM) due to the LO chain’s low jitter and high quadrature accuracy. The measured rms error vector magnitudes (EVMs) are within 1.46% and −26.4 dB for QAM and orthogonal frequency-division multiplexing (OFDM) schemes.
{"title":"A Ka-Band 1024-QAM CMOS I/Q Modulator Using a 15th-Order Cascaded Subharmonically Injection-Locked Frequency Multiplier Chain With FTL","authors":"Hong-Yeh Chang;Liang-Yu Chen;Po-Yuan Chen","doi":"10.1109/TMTT.2024.3462972","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3462972","url":null,"abstract":"This article presents the design and analysis of a Ka-band advanced in-phase and quadrature (I/Q) modulator using a 90-nm CMOS process. To achieve a subharmonic number of up to 15 while maintaining good quadrature accuracy, a cascaded subharmonically injection-locked frequency multiplier (SILFM) chain, incorporating a frequency-tracking loop (FTL) and differential injection, is employed in the local oscillation (LO) generation for the proposed I/Q modulator. Accurate modulation quality is ensured by performing vector modulation through four reflection-type modulators. The design methodology of the cascaded SILFM, along with theoretical results, is presented, focusing on locking range, quadrature accuracy with injection, phase noise, and jitter. The SILFM consumes a total dc power of 74 mW and features a measured locking range from 27 to 28.7 GHz, a minimum phase noise of −122.8 dBc/Hz at a 1-MHz offset, and an rms jitter of 27.5 fs integrated from 1 kHz to 40 MHz. In addition, the proposed I/Q modulator demonstrates superior performance up to 1024 quadrature amplitude modulation (1024-QAM) due to the LO chain’s low jitter and high quadrature accuracy. The measured rms error vector magnitudes (EVMs) are within 1.46% and −26.4 dB for QAM and orthogonal frequency-division multiplexing (OFDM) schemes.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"102-117"},"PeriodicalIF":4.1,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-01DOI: 10.1109/TMTT.2024.3463484
Hani Al Jamal;Chenhao Hu;Edward Kwao;Kai Zeng;Manos M. Tentzeris
This article presents the first shape-changing phased array operating at 28 GHz as an alternative to traditional planar phased arrays. By combining electrical beamsteering with mechanical shape change, this design achieves high degrees of freedom, resulting in near-limitless radiation pattern reconfigurability and overcoming the tradeoff between gain and angular coverage. Utilizing the eggbox origami structure, a 4-D multifaceted foldable phased array is developed, and a modular tile-based (unit-cell) approach is employed to enable TX/RX selective activation and scalability to massive MIMO. This results in near 360° continuous beam steering in the azimuth plane with reconfigurable multibeam or quasi-isotropic radiation patterns. Additive manufacturing processes are employed to realize the first shape-changing phased array at a miniaturized millimeter scale. The eggbox phased array features highly integrated on-structure beamformer ICs and a flexible feeding network utilizing a uniquely designed foldable interconnect. As the first additively manufactured mm-wave hinge interconnects, the presented “arch” interconnect exhibits near-constant insertion loss of 0.02 dB/mm across various folding angles and cycles. In addition, a microservo-based actuation mechanism is designed to precisely control the origami folding action. Measurements demonstrate the phased array’s pattern reconfigurability, and its effectiveness is further validated in an orthogonal frequency division multiplexing (OFDM)-based communication testbed setup. Furthermore, this article provides a holistic multidisciplinary framework guiding the development of a new era of mm-wave shape-changing phased arrays, encompassing considerations in hardware realization, actuation, and 3-D beam shaping/calibration. Given its multitude of novel features, the eggbox phased array can enable a plethora of applications, ranging from multimode in-band full-duplex applications to multifunction multibeam use cases, extreme interference mitigation, and space-constrained deployments.
{"title":"Toward 5G/mm-Wave Shape-Changing Origami-Inspired Phased Arrays for Near-Limitless Arbitrarily Reconfigurable Radiation Patterns: Realization, Actuation, and Calibration","authors":"Hani Al Jamal;Chenhao Hu;Edward Kwao;Kai Zeng;Manos M. Tentzeris","doi":"10.1109/TMTT.2024.3463484","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3463484","url":null,"abstract":"This article presents the first shape-changing phased array operating at 28 GHz as an alternative to traditional planar phased arrays. By combining electrical beamsteering with mechanical shape change, this design achieves high degrees of freedom, resulting in near-limitless radiation pattern reconfigurability and overcoming the tradeoff between gain and angular coverage. Utilizing the eggbox origami structure, a 4-D multifaceted foldable phased array is developed, and a modular tile-based (unit-cell) approach is employed to enable TX/RX selective activation and scalability to massive MIMO. This results in near 360° continuous beam steering in the azimuth plane with reconfigurable multibeam or quasi-isotropic radiation patterns. Additive manufacturing processes are employed to realize the first shape-changing phased array at a miniaturized millimeter scale. The eggbox phased array features highly integrated on-structure beamformer ICs and a flexible feeding network utilizing a uniquely designed foldable interconnect. As the first additively manufactured mm-wave hinge interconnects, the presented “arch” interconnect exhibits near-constant insertion loss of 0.02 dB/mm across various folding angles and cycles. In addition, a microservo-based actuation mechanism is designed to precisely control the origami folding action. Measurements demonstrate the phased array’s pattern reconfigurability, and its effectiveness is further validated in an orthogonal frequency division multiplexing (OFDM)-based communication testbed setup. Furthermore, this article provides a holistic multidisciplinary framework guiding the development of a new era of mm-wave shape-changing phased arrays, encompassing considerations in hardware realization, actuation, and 3-D beam shaping/calibration. Given its multitude of novel features, the eggbox phased array can enable a plethora of applications, ranging from multimode in-band full-duplex applications to multifunction multibeam use cases, extreme interference mitigation, and space-constrained deployments.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"397-411"},"PeriodicalIF":4.1,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142937876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-25DOI: 10.1109/TMTT.2024.3458189
Tobias Kristensen;Torbjörn M. J. Nilsson;Andreas Divinyi;Johan Bremer;Mattias Thorsell
The influence of dynamic thermal coupling on gallium nitride (GaN) monolithically microwave integrated circuit (MMIC) power amplifiers (PAs) is investigated through transient measurements, numerical simulations, and equivalent circuit modeling. The measured thermal coupling exhibits a low-pass-filtered response, where the magnitude and cutoff frequency decrease with increasing separation from the heat source. The coupling between two neighboring transistor channels shows a fractional order transient response and a pronounced temperature increase after $approx 1~mu $ s in the measurements. The coupling between transistors on the same MMIC is close to a first-order transient response and shows a pronounced temperature increase after $100~mu $ s to 2.6 ms for the measured structure. It is shown that the thermal coupling causes the transistors in the PA to operate at different temperatures, where the transient response of the PA exhibits five distinct time regions. An equivalent linear network is extracted to model the effect efficiently in a circuit simulator. Here, it is shown that the thermal coupling between neighboring transistors can change the thermal response of the PA considerably below 10 kHz. The outlined results give guidelines for predicting the dynamic self-heating in GaN PAs.
{"title":"Dynamic Thermal Coupling in GaN MMIC Power Amplifiers","authors":"Tobias Kristensen;Torbjörn M. J. Nilsson;Andreas Divinyi;Johan Bremer;Mattias Thorsell","doi":"10.1109/TMTT.2024.3458189","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3458189","url":null,"abstract":"The influence of dynamic thermal coupling on gallium nitride (GaN) monolithically microwave integrated circuit (MMIC) power amplifiers (PAs) is investigated through transient measurements, numerical simulations, and equivalent circuit modeling. The measured thermal coupling exhibits a low-pass-filtered response, where the magnitude and cutoff frequency decrease with increasing separation from the heat source. The coupling between two neighboring transistor channels shows a fractional order transient response and a pronounced temperature increase after \u0000<inline-formula> <tex-math>$approx 1~mu $ </tex-math></inline-formula>\u0000s in the measurements. The coupling between transistors on the same MMIC is close to a first-order transient response and shows a pronounced temperature increase after \u0000<inline-formula> <tex-math>$100~mu $ </tex-math></inline-formula>\u0000s to 2.6 ms for the measured structure. It is shown that the thermal coupling causes the transistors in the PA to operate at different temperatures, where the transient response of the PA exhibits five distinct time regions. An equivalent linear network is extracted to model the effect efficiently in a circuit simulator. Here, it is shown that the thermal coupling between neighboring transistors can change the thermal response of the PA considerably below 10 kHz. The outlined results give guidelines for predicting the dynamic self-heating in GaN PAs.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"38-44"},"PeriodicalIF":4.1,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-25DOI: 10.1109/TMTT.2024.3461211
Yimin Yang;Beizun Liu;Qiuyi Wu;Ming Yu
This article extends the circuit-based approach to synthesizing coupling matrices (CMs), allowing for the inclusion of frequency-dependent couplings (FDCs). First, it provides a comprehensive study of the inherent properties of FDCs, revisiting the minimum path rule and revealing that extending from frequency-invariant couplings (FICs) to FDC amplifies nonphysical traits, such as the generation of second-order zeros in local circuits. When FDC is used as input or output (I/O) coupling, it inevitably introduces right-half-plane (RHP) roots into the overall network. However, these nonphysical traits can be managed during physical circuit construction, allowing FDC circuits to effectively guide microwave filter design. Second, within the CM framework, the article proposes an analytical method for synthesizing FDC-coupled networks, including I/O couplings. A novel and straightforward synthesis approach based on circuit element extraction is introduced, eliminating the need for intermediate steps involving frequency-invariant matrices or extracted pole (EP) circuits. Furthermore, an analytical method for the de-normalization of directly coupled FDC filters is presented, facilitating dimensional synthesis. The versatility and effectiveness of the proposed method are demonstrated through various synthesis examples, including detailed physical dimension calculations and validation against measured data.
{"title":"General Synthesis for Microwave Filters With Frequency Linear Dependent Couplings Using Circuit Approach","authors":"Yimin Yang;Beizun Liu;Qiuyi Wu;Ming Yu","doi":"10.1109/TMTT.2024.3461211","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3461211","url":null,"abstract":"This article extends the circuit-based approach to synthesizing coupling matrices (CMs), allowing for the inclusion of frequency-dependent couplings (FDCs). First, it provides a comprehensive study of the inherent properties of FDCs, revisiting the minimum path rule and revealing that extending from frequency-invariant couplings (FICs) to FDC amplifies nonphysical traits, such as the generation of second-order zeros in local circuits. When FDC is used as input or output (I/O) coupling, it inevitably introduces right-half-plane (RHP) roots into the overall network. However, these nonphysical traits can be managed during physical circuit construction, allowing FDC circuits to effectively guide microwave filter design. Second, within the CM framework, the article proposes an analytical method for synthesizing FDC-coupled networks, including I/O couplings. A novel and straightforward synthesis approach based on circuit element extraction is introduced, eliminating the need for intermediate steps involving frequency-invariant matrices or extracted pole (EP) circuits. Furthermore, an analytical method for the de-normalization of directly coupled FDC filters is presented, facilitating dimensional synthesis. The versatility and effectiveness of the proposed method are demonstrated through various synthesis examples, including detailed physical dimension calculations and validation against measured data.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"286-297"},"PeriodicalIF":4.1,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-24DOI: 10.1109/TMTT.2024.3417936
An-Qi Zhang;Yang Yi;Leilei Liu
We present a novel method for designing a dual-wideband bandpass filter (BPF) with independently adjustable cutoff frequencies. This approach offers potential applications in the microwave to millimeter-wave frequency ranges. Our strategy involves integrating the textured structures into the surface plasmon polariton (SPP)-like waves induced by the structural dispersion of the substrate-integrated waveguide (SIW), thereby exciting the effective spoof SPPs (ESSPPs) mode. By exploiting the transmission properties of the ESSPPs mode, we develop a dual-wideband BPF. The filter comprises five layers of SIW, each layer characterized by its width and the dielectric material it contains, allowing for versatile control over geometrical parameters and dielectric materials. This flexibility enables precise positioning of passbands within the spectrum. A prototype of the dual-wide BPF is fabricated using multilayer printed circuit boards (PCBs). Both simulated and experimental results demonstrate satisfactory skirt selectivity within the passband (4.8–6.5 GHz and 7–9.8 GHz) and stable stopband (6.5–7 GHz and 9.8–12 GHz). In addition, the filter exhibits outstanding in-band characteristics and selectivity, as verified by measurements. Furthermore, this dual-band BPF design can be readily extended to tri-band or quad-band BPFs by incorporating additional layers.
{"title":"A Dual-Wideband Bandpass Filter With Independently Designed Cutoff Frequencies","authors":"An-Qi Zhang;Yang Yi;Leilei Liu","doi":"10.1109/TMTT.2024.3417936","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3417936","url":null,"abstract":"We present a novel method for designing a dual-wideband bandpass filter (BPF) with independently adjustable cutoff frequencies. This approach offers potential applications in the microwave to millimeter-wave frequency ranges. Our strategy involves integrating the textured structures into the surface plasmon polariton (SPP)-like waves induced by the structural dispersion of the substrate-integrated waveguide (SIW), thereby exciting the effective spoof SPPs (ESSPPs) mode. By exploiting the transmission properties of the ESSPPs mode, we develop a dual-wideband BPF. The filter comprises five layers of SIW, each layer characterized by its width and the dielectric material it contains, allowing for versatile control over geometrical parameters and dielectric materials. This flexibility enables precise positioning of passbands within the spectrum. A prototype of the dual-wide BPF is fabricated using multilayer printed circuit boards (PCBs). Both simulated and experimental results demonstrate satisfactory skirt selectivity within the passband (4.8–6.5 GHz and 7–9.8 GHz) and stable stopband (6.5–7 GHz and 9.8–12 GHz). In addition, the filter exhibits outstanding in-band characteristics and selectivity, as verified by measurements. Furthermore, this dual-band BPF design can be readily extended to tri-band or quad-band BPFs by incorporating additional layers.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"631-640"},"PeriodicalIF":4.1,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article presents an on-chip low-pass filter (LPF) for cognitive radio (CR) in a 130-nm SiGe BiCMOS technology. The LPF achieves a broad tuning range of 0.1–3.2 GHz with a 100-MHz step. To address gain variation caused by the frequency-peaking effect, we propose an adaptive impedance transformation (AIT) technique, achieving a remarkable ripple of less than 3.01 dB across the entire 0.1–3.2 GHz frequency band. This technique also enhances passband selectivity. Furthermore, we introduce a novel operational amplifier (OPAMP) featuring a four-stage heterojunction bipolar transistor (HBT)–complementary metal-oxide–semiconductor (CMOS) transistor composite pair. Leveraging the inherent advantages of both HBT and CMOS technologies, this OPAMP elevates the gain-bandwidth (GBW) product from 0.834 GHz of a CMOS-only topology to an impressive 8.33 GHz. The LPF requires only 8 mA in the low-power mode at 1.5 V and 17.5 mA in the high-power mode at 2 V. With such wide-tuning range, the proposed LPF is suitable for CR applications.
{"title":"A 0.1–3.2 GHz Reconfigurable LPF With Peaking Reducing and Selectivity Enhancement Using Adaptive Impedance Transformation Technique","authors":"Xu Cheng;Yunbo Rao;Xianhu Luo;Liang Zhang;Jiangan Han;Rui Wu;Haibo Tang;Xingdong Liang;Xianjin Deng;Hao Gao","doi":"10.1109/TMTT.2024.3452132","DOIUrl":"https://doi.org/10.1109/TMTT.2024.3452132","url":null,"abstract":"This article presents an on-chip low-pass filter (LPF) for cognitive radio (CR) in a 130-nm SiGe BiCMOS technology. The LPF achieves a broad tuning range of 0.1–3.2 GHz with a 100-MHz step. To address gain variation caused by the frequency-peaking effect, we propose an adaptive impedance transformation (AIT) technique, achieving a remarkable ripple of less than 3.01 dB across the entire 0.1–3.2 GHz frequency band. This technique also enhances passband selectivity. Furthermore, we introduce a novel operational amplifier (OPAMP) featuring a four-stage heterojunction bipolar transistor (HBT)–complementary metal-oxide–semiconductor (CMOS) transistor composite pair. Leveraging the inherent advantages of both HBT and CMOS technologies, this OPAMP elevates the gain-bandwidth (GBW) product from 0.834 GHz of a CMOS-only topology to an impressive 8.33 GHz. The LPF requires only 8 mA in the low-power mode at 1.5 V and 17.5 mA in the high-power mode at 2 V. With such wide-tuning range, the proposed LPF is suitable for CR applications.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"118-129"},"PeriodicalIF":4.1,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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