Pub Date : 2024-08-26DOI: 10.1109/TMTT.2024.3443669
Siwei Wan;Qing Huo Liu
The hybrid finite element spectral integral (FESI) method is developed to solve the radiation and scattering problems of multiple circular cylinders with inhomogeneous shells. The FESI method combines the spectral integral method (SIM) with the finite element method (FEM) to simulate electromagnetic (EM) scattering from inhomogeneities separated by multiple regions of homogeneous spaces. The SIM is extended to multiple circular dielectric cylinders and serves as the exact radiation boundary condition for the FEM to simulate waves in the remaining inhomogeneous regions. This approach eliminates the mesh in any homogeneous domains with circular boundaries and leads to higher efficiency than the traditional FEM. The SIM can achieve 99% accuracy with up to 90% less sampling density than the method of moments (MoM) and has exponential convergence. We present several numerical examples to demonstrate the accuracy and efficiency of the SIM and FESI method.
{"title":"Finite Element Spectral Integral (FESI) Method for Scattering From an Arbitrary Number of Circular Cylinders With Inhomogeneous Shells","authors":"Siwei Wan;Qing Huo Liu","doi":"10.1109/TMTT.2024.3443669","DOIUrl":"10.1109/TMTT.2024.3443669","url":null,"abstract":"The hybrid finite element spectral integral (FESI) method is developed to solve the radiation and scattering problems of multiple circular cylinders with inhomogeneous shells. The FESI method combines the spectral integral method (SIM) with the finite element method (FEM) to simulate electromagnetic (EM) scattering from inhomogeneities separated by multiple regions of homogeneous spaces. The SIM is extended to multiple circular dielectric cylinders and serves as the exact radiation boundary condition for the FEM to simulate waves in the remaining inhomogeneous regions. This approach eliminates the mesh in any homogeneous domains with circular boundaries and leads to higher efficiency than the traditional FEM. The SIM can achieve 99% accuracy with up to 90% less sampling density than the method of moments (MoM) and has exponential convergence. We present several numerical examples to demonstrate the accuracy and efficiency of the SIM and FESI method.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 2","pages":"854-866"},"PeriodicalIF":4.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-26DOI: 10.1109/TMTT.2024.3443607
Chiara Ramella;Corrado Florian;Maria Del Rocìo Garcìa;Iain Davies;Marco Pirola;Paolo Colantonio
This article presents the complete characterization of a Ka-band monolithic (MMIC) high-power amplifier (HPA) developed with a commercial 100-nm gallium nitride (GaN)/Si process provided by OMMIC (now MACOM). The amplifier was conceived for a space-compliant environment, focusing, in particular, on pulsed radar applications, e.g., for synthetic aperture radar (SAR) altimetry. The amplifier is designed accounting for the critical reliability constraints posed by the space environment. Due to the poorer thermal characteristics of GaN/Si technologies compared with their GaN/SiC counterparts, proper thermal-aware criteria are needed to be exploited during the design process. The fabricated MMIC has been characterized under different biasing and temperature conditions and finally tested with a representative SAR signal. The amplifier achieves at 36 GHz an output power of 10, 8.4, and 6.6 W when biased with a drain voltage of 11.25, 10, and 9 V, respectively, with an associated PAE around 20% and a linear gain of roughly 20 dB under all biasing conditions and with an MMIC backside temperature ranging from $- 10~^{circ }$ C up to $+ 80~^{circ }$ C. With a 9-V bias, the designed MMIC is fully compliant with the maximum derated junction temperature limit of $160~^{circ }$ C recommended for space reliability in both pulsed and continuous-wave (CW) operations, demonstrating performance well in line with the state of the art for this technology when a space-grade design is required.
{"title":"Development of a Space-Grade Ka-Band MMIC Power Amplifier in GaN/Si Technology for SAR Applications","authors":"Chiara Ramella;Corrado Florian;Maria Del Rocìo Garcìa;Iain Davies;Marco Pirola;Paolo Colantonio","doi":"10.1109/TMTT.2024.3443607","DOIUrl":"10.1109/TMTT.2024.3443607","url":null,"abstract":"This article presents the complete characterization of a Ka-band monolithic (MMIC) high-power amplifier (HPA) developed with a commercial 100-nm gallium nitride (GaN)/Si process provided by OMMIC (now MACOM). The amplifier was conceived for a space-compliant environment, focusing, in particular, on pulsed radar applications, e.g., for synthetic aperture radar (SAR) altimetry. The amplifier is designed accounting for the critical reliability constraints posed by the space environment. Due to the poorer thermal characteristics of GaN/Si technologies compared with their GaN/SiC counterparts, proper thermal-aware criteria are needed to be exploited during the design process. The fabricated MMIC has been characterized under different biasing and temperature conditions and finally tested with a representative SAR signal. The amplifier achieves at 36 GHz an output power of 10, 8.4, and 6.6 W when biased with a drain voltage of 11.25, 10, and 9 V, respectively, with an associated PAE around 20% and a linear gain of roughly 20 dB under all biasing conditions and with an MMIC backside temperature ranging from <inline-formula> <tex-math>$- 10~^{circ }$ </tex-math></inline-formula>C up to <inline-formula> <tex-math>$+ 80~^{circ }$ </tex-math></inline-formula>C. With a 9-V bias, the designed MMIC is fully compliant with the maximum derated junction temperature limit of <inline-formula> <tex-math>$160~^{circ }$ </tex-math></inline-formula>C recommended for space reliability in both pulsed and continuous-wave (CW) operations, demonstrating performance well in line with the state of the art for this technology when a space-grade design is required.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 2","pages":"977-987"},"PeriodicalIF":4.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10647218","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TMTT.2024.3439653
Md Aminul Hoque;Deukhyoun Heo
This article introduces an innovative four-port dual-path inductor designed to deliver two distinct inductance values to the resonator of a voltage-controlled oscillator (VCO). The switching between the inductor’s two excitation modes, even and odd, is determined by the differential excitation’s input polarity, eliminating the need for a series switch. Thus, the inductor has a high-quality factor (Q) in both modes. The inductances in these modes can be independently set based on desired frequencies. This inductance change achieves coarse frequency tuning, while fine-tuning is realized by a conventional 2-bit capacitor bank with a small-size varactor. This inductor is well suited for designing multiband VCOs aimed at widely spaced operation frequency bands. Apart from the inductance change, a particular case of mode-switching capacitor is employed to extend to another frequency band in between the low and middle bands, achieving triple-band oscillation. As a result, this article presents two VCOs designed using the proposed inductor: one in class-D biasing in a 65-nm CMOS process and another with class-B biasing in a 180-nm BiCMOS process. Both VCOs successfully oscillate across three distinct frequency bands, centered at 19, 28, and 36 GHz, while maintaining outstanding phase noise and minimal power consumption. Measurement results show good match with simulation, resulting in a peak figure of merit (FoM) of 185.7 dBc/Hz at 18.5 GHz, and occupy 0.088-$text {mm}^{2}$ ($250times 350~mu $ m) area in both processes.
{"title":"A Triple-Band, High DC-to-RF Efficiency, Multicore VCO With a Dual-Path Inductor and Mode-Switching Capacitor","authors":"Md Aminul Hoque;Deukhyoun Heo","doi":"10.1109/TMTT.2024.3439653","DOIUrl":"10.1109/TMTT.2024.3439653","url":null,"abstract":"This article introduces an innovative four-port dual-path inductor designed to deliver two distinct inductance values to the resonator of a voltage-controlled oscillator (VCO). The switching between the inductor’s two excitation modes, even and odd, is determined by the differential excitation’s input polarity, eliminating the need for a series switch. Thus, the inductor has a high-quality factor (Q) in both modes. The inductances in these modes can be independently set based on desired frequencies. This inductance change achieves coarse frequency tuning, while fine-tuning is realized by a conventional 2-bit capacitor bank with a small-size varactor. This inductor is well suited for designing multiband VCOs aimed at widely spaced operation frequency bands. Apart from the inductance change, a particular case of mode-switching capacitor is employed to extend to another frequency band in between the low and middle bands, achieving triple-band oscillation. As a result, this article presents two VCOs designed using the proposed inductor: one in class-D biasing in a 65-nm CMOS process and another with class-B biasing in a 180-nm BiCMOS process. Both VCOs successfully oscillate across three distinct frequency bands, centered at 19, 28, and 36 GHz, while maintaining outstanding phase noise and minimal power consumption. Measurement results show good match with simulation, resulting in a peak figure of merit (FoM) of 185.7 dBc/Hz at 18.5 GHz, and occupy 0.088-<inline-formula> <tex-math>$text {mm}^{2}$ </tex-math></inline-formula> (<inline-formula> <tex-math>$250times 350~mu $ </tex-math></inline-formula> m) area in both processes.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 2","pages":"998-1008"},"PeriodicalIF":4.1,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The limitation between the tunable bandwidth and the number of states greatly restricts the application and development of reconfigurable absorbers. Therefore, the fluctuated impedance design (FID) method is proposed for the first time to provide a solution for reconfigurable absorbers with few states. The point of FID is to introduce fluctuation factors (FFs) to disrupt the monotonicity of impedance, creating multiple susceptance offset points to achieve multistate fusion. The working principle of FID was analyzed by equivalent circuit model. Simulations of the surface field distribution illustrate its physical mechanism. Through the reconfigurable property of the PIN diode, the FID absorber covers a tuning absorption band from 0.72 to 5.84 GHz using only two states. Multiple absorption peaks at low frequencies are fused into one broadband low-frequency absorption state with the percentage bandwidth expanded to 64.2%. The thickness is only $0.048lambda _{L}$ ($lambda _{L}$ is the wavelength of the lowest operating frequency).
{"title":"Fluctuated Impedance Design Method for Multistate Fusion of Broadband Reconfigurable Absorbers","authors":"Yunfei Xia;Zhaowang Cao;Peiliang Wang;Dayi Wan;Haoran Li;Yuhan Wu;Ling Miao;Jianjun Jiang","doi":"10.1109/TMTT.2024.3437691","DOIUrl":"10.1109/TMTT.2024.3437691","url":null,"abstract":"The limitation between the tunable bandwidth and the number of states greatly restricts the application and development of reconfigurable absorbers. Therefore, the fluctuated impedance design (FID) method is proposed for the first time to provide a solution for reconfigurable absorbers with few states. The point of FID is to introduce fluctuation factors (FFs) to disrupt the monotonicity of impedance, creating multiple susceptance offset points to achieve multistate fusion. The working principle of FID was analyzed by equivalent circuit model. Simulations of the surface field distribution illustrate its physical mechanism. Through the reconfigurable property of the PIN diode, the FID absorber covers a tuning absorption band from 0.72 to 5.84 GHz using only two states. Multiple absorption peaks at low frequencies are fused into one broadband low-frequency absorption state with the percentage bandwidth expanded to 64.2%. The thickness is only <inline-formula> <tex-math>$0.048lambda _{L}$ </tex-math></inline-formula> (<inline-formula> <tex-math>$lambda _{L}$ </tex-math></inline-formula> is the wavelength of the lowest operating frequency).","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 2","pages":"821-830"},"PeriodicalIF":4.1,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, we propose a novel photonic-based integrated scheme that simultaneously achieves radar jamming signal generation and chaotic encrypted wireless communication. The velocity deception jamming signals are generated with a high spurious suppression ratio of 31.9–33.2 dB. Additionally, the range deception jamming has been efficiently executed. Simultaneously, an encrypted 64-quadrature amplitude modulation (64QAM) OFDM signal with a key space of $10^{50}$ is transmitted over a 1.5-m wireless link, meeting the hard decision forward error correction (HD-FEC) threshold of $3.8times 10^{-3}$ , corresponding to a net rate of 9.9 Gbit/s. In addition, a maximum modulation error ratio (MER) of 21.4 dB is achieved below the error vector magnitude (EVM) threshold of 9%. The proposed scheme effectively combines the capabilities of degrading enemy radar detection and enhancing one’s wireless communication security, which may be a potential application for electronic countermeasures in the future.
{"title":"Integrated Radar Jamming Signal Generation and Secure Wireless Communication Based on Photonics at Ka-Band","authors":"Yanyi Wang;Dongju Du;Yingxiong Song;Zhengxuan Li;Nan Ye;Qianwu Zhang;Junjie Zhang;Jian Chen;Bingyao Cao;Jianjun Yu","doi":"10.1109/TMTT.2024.3439997","DOIUrl":"10.1109/TMTT.2024.3439997","url":null,"abstract":"In this article, we propose a novel photonic-based integrated scheme that simultaneously achieves radar jamming signal generation and chaotic encrypted wireless communication. The velocity deception jamming signals are generated with a high spurious suppression ratio of 31.9–33.2 dB. Additionally, the range deception jamming has been efficiently executed. Simultaneously, an encrypted 64-quadrature amplitude modulation (64QAM) OFDM signal with a key space of \u0000<inline-formula> <tex-math>$10^{50}$ </tex-math></inline-formula>\u0000 is transmitted over a 1.5-m wireless link, meeting the hard decision forward error correction (HD-FEC) threshold of \u0000<inline-formula> <tex-math>$3.8times 10^{-3}$ </tex-math></inline-formula>\u0000, corresponding to a net rate of 9.9 Gbit/s. In addition, a maximum modulation error ratio (MER) of 21.4 dB is achieved below the error vector magnitude (EVM) threshold of 9%. The proposed scheme effectively combines the capabilities of degrading enemy radar detection and enhancing one’s wireless communication security, which may be a potential application for electronic countermeasures in the future.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"72 10","pages":"6010-6019"},"PeriodicalIF":4.1,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TMTT.2024.3443716
Muhammad Rizwan Akram;Abbas Semnani
Plasma plays a pivotal role in numerous applications. When plasma interacts with air, it creates rare and highly reactive species. Typically, the generation of atmospheric air plasma jets relies on resonant cavities to enhance plasma efficiency. In this study, we have harnessed the innovative concept of nonradiating sources, known as anapoles, which utilize the lowest order multipoles—specifically, electric-electric dipole interactions—within a hybrid metallodielectric structure. This approach enhances the near electric field, facilitating gas breakdown for the realization of a plasma jet. The achievement of a dielectric plasma jet is remarkable in its own right, particularly when considering the open structure employed, which enables frequency tuning. Furthermore, the demonstrated prototype surpasses the existing plasma jets in several key aspects, including compactness, compatibility with planar fabrication techniques, power efficiency, cost-effectiveness, tunability, and electron density. With these substantial enhancements, the proposed technique can substantially enhance plasma jet technology and open exciting avenues for exploring novel applications.
{"title":"Nonradiating Resonances: Anapoles Enabling Highly Efficient Plasma Jets Within Dielectric Structures","authors":"Muhammad Rizwan Akram;Abbas Semnani","doi":"10.1109/TMTT.2024.3443716","DOIUrl":"10.1109/TMTT.2024.3443716","url":null,"abstract":"Plasma plays a pivotal role in numerous applications. When plasma interacts with air, it creates rare and highly reactive species. Typically, the generation of atmospheric air plasma jets relies on resonant cavities to enhance plasma efficiency. In this study, we have harnessed the innovative concept of nonradiating sources, known as anapoles, which utilize the lowest order multipoles—specifically, electric-electric dipole interactions—within a hybrid metallodielectric structure. This approach enhances the near electric field, facilitating gas breakdown for the realization of a plasma jet. The achievement of a dielectric plasma jet is remarkable in its own right, particularly when considering the open structure employed, which enables frequency tuning. Furthermore, the demonstrated prototype surpasses the existing plasma jets in several key aspects, including compactness, compatibility with planar fabrication techniques, power efficiency, cost-effectiveness, tunability, and electron density. With these substantial enhancements, the proposed technique can substantially enhance plasma jet technology and open exciting avenues for exploring novel applications.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 1","pages":"352-360"},"PeriodicalIF":4.1,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TMTT.2024.3441948
Farhad Ghorbani;Amir Dayan;Jiafeng Zhou;Yi Huang;Alexander G. Schuchinsky;Mattias Gustafsson
In telecommunication systems, like full-duplex transceivers, simultaneous transmission, and reception demand highly linear components to minimize intermodulation interference. PIN-diode-based RF switches used either independently or as part of a device, can introduce nonlinearity in both ON and OFF states. This article evaluates the impact of the topology on the linearity of PIN-diode-based RF switches and proposes an optimal two-diode arrangement to achieve superior linearity performance. The proposed topology combines the strengths of the series and parallel topologies while mitigating their weaknesses. Owing to its inclusion of two PIN diodes, the proposed topology also leverages the distance between them to further increase the linearity. The presented analysis indicates that having a quarter-wavelength distance between the diodes is key for achieving intermodulation cancellation in the ON state, resulting in a 12 dB IIP3 enhancement. In the OFF state, complete distortion cancellation is more complicated due to additional reflections. The quarter wavelength transmission line was utilized as an impedance transformer to improve linearity by altering the impedance seen by each diode. Detailed analysis, supported by mathematical and experimental results, confirms a 20 dB improvement in IIP3 in the OFF state. Consequently, the peak IIP3 values, 99 dBm in the ON state, and 111 dBm in the OFF state occur within a narrow bandwidth. The proposed switch maintains an IIP3 of 95 dBm in both states across a wider bandwidth of 1.8–2.6 GHz.
{"title":"Linearity Enhancement in PIN-Diode-Based Switches","authors":"Farhad Ghorbani;Amir Dayan;Jiafeng Zhou;Yi Huang;Alexander G. Schuchinsky;Mattias Gustafsson","doi":"10.1109/TMTT.2024.3441948","DOIUrl":"10.1109/TMTT.2024.3441948","url":null,"abstract":"In telecommunication systems, like full-duplex transceivers, simultaneous transmission, and reception demand highly linear components to minimize intermodulation interference. PIN-diode-based RF switches used either independently or as part of a device, can introduce nonlinearity in both ON and OFF states. This article evaluates the impact of the topology on the linearity of PIN-diode-based RF switches and proposes an optimal two-diode arrangement to achieve superior linearity performance. The proposed topology combines the strengths of the series and parallel topologies while mitigating their weaknesses. Owing to its inclusion of two PIN diodes, the proposed topology also leverages the distance between them to further increase the linearity. The presented analysis indicates that having a quarter-wavelength distance between the diodes is key for achieving intermodulation cancellation in the ON state, resulting in a 12 dB IIP3 enhancement. In the OFF state, complete distortion cancellation is more complicated due to additional reflections. The quarter wavelength transmission line was utilized as an impedance transformer to improve linearity by altering the impedance seen by each diode. Detailed analysis, supported by mathematical and experimental results, confirms a 20 dB improvement in IIP3 in the OFF state. Consequently, the peak IIP3 values, 99 dBm in the ON state, and 111 dBm in the OFF state occur within a narrow bandwidth. The proposed switch maintains an IIP3 of 95 dBm in both states across a wider bandwidth of 1.8–2.6 GHz.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 2","pages":"789-800"},"PeriodicalIF":4.1,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the help of the micro-Doppler signature, ultrawideband (UWB) through-the-wall radar (TWR) enables the reconstruction of range and velocity information of limb nodes to accurately identify indoor human activities. However, existing methods are usually trained and validated directly using range-time maps (RTMs) and Doppler-time maps (DTMs), which have high feature redundancy and poor generalization ability. In order to solve this problem, this article proposes a human activity micro-Doppler signature representation method based on a joint Boulic-sinusoidal pendulum motion model. In detail, this article presents a simplified joint Boulic-sinusoidal pendulum human motion model by taking the head, torso, both hands, and feet into consideration improved from Boulic-Thalmann kinematic model. This article also calculates the minimum number of key points needed to describe the Doppler and micro-Doppler information sufficiently. Both numerical simulations and experiments are conducted to verify the effectiveness. The results demonstrate that the proposed number of key points of the micro-Doppler signature can precisely represent the indoor human limb node motion characteristics and substantially improve the generalization capability of the existing methods for different testers.
{"title":"Through-the-Wall Radar Human Activity Micro-Doppler Signature Representation Method Based on Joint Boulic-Sinusoidal Pendulum Model","authors":"Xiaopeng Yang;Weicheng Gao;Xiaodong Qu;Zeyu Ma;Hao Zhang","doi":"10.1109/TMTT.2024.3441591","DOIUrl":"10.1109/TMTT.2024.3441591","url":null,"abstract":"With the help of the micro-Doppler signature, ultrawideband (UWB) through-the-wall radar (TWR) enables the reconstruction of range and velocity information of limb nodes to accurately identify indoor human activities. However, existing methods are usually trained and validated directly using range-time maps (RTMs) and Doppler-time maps (DTMs), which have high feature redundancy and poor generalization ability. In order to solve this problem, this article proposes a human activity micro-Doppler signature representation method based on a joint Boulic-sinusoidal pendulum motion model. In detail, this article presents a simplified joint Boulic-sinusoidal pendulum human motion model by taking the head, torso, both hands, and feet into consideration improved from Boulic-Thalmann kinematic model. This article also calculates the minimum number of key points needed to describe the Doppler and micro-Doppler information sufficiently. Both numerical simulations and experiments are conducted to verify the effectiveness. The results demonstrate that the proposed number of key points of the micro-Doppler signature can precisely represent the indoor human limb node motion characteristics and substantially improve the generalization capability of the existing methods for different testers.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 2","pages":"1248-1263"},"PeriodicalIF":4.1,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TMTT.2024.3442208
Tian Pei Ma;Hong Bin Wang;Yu Jian Cheng
A dual-band dual-polarization frequency selective surface (FSS) with wide-range flexible band ratio and wide angular stability is proposed. Subwavelength metal walls acted as plate capacitors are loaded onto two separate radiating square slot elements arranged in a triangular array to realize miniaturization and wide-range flexible band ratio from 1.33 to 7.11 in 1–7.7 GHz. The single-layer square slot resonator is modified into a two-layer self-decoupling structure with reverse currents in different layers to realize wide angular stability up to 70°. Based on the substrate integrated waveguide (SIW) theory, the metal walls can be represented by arrays of vias for fabrication. The independently controllable passband responses and equivalent circuit model (ECM) significantly simplify the FSS design. A prototype of the proposed FSS has been fabricated and measured. The measured results have favorable agreement with the simulated results, thus validating the FSS design. The proposed FSS can act as antenna radome and antenna decoupling structure, which can be widely used in multiband antennas, shared-aperture antennas, wide-angle scanning antenna arrays, and near-field loading, with high design flexibility.
{"title":"A Dual-Band Dual-Polarization Frequency Selective Surface With Wide-Range Flexible Band Ratio and Wide Angular Stability","authors":"Tian Pei Ma;Hong Bin Wang;Yu Jian Cheng","doi":"10.1109/TMTT.2024.3442208","DOIUrl":"10.1109/TMTT.2024.3442208","url":null,"abstract":"A dual-band dual-polarization frequency selective surface (FSS) with wide-range flexible band ratio and wide angular stability is proposed. Subwavelength metal walls acted as plate capacitors are loaded onto two separate radiating square slot elements arranged in a triangular array to realize miniaturization and wide-range flexible band ratio from 1.33 to 7.11 in 1–7.7 GHz. The single-layer square slot resonator is modified into a two-layer self-decoupling structure with reverse currents in different layers to realize wide angular stability up to 70°. Based on the substrate integrated waveguide (SIW) theory, the metal walls can be represented by arrays of vias for fabrication. The independently controllable passband responses and equivalent circuit model (ECM) significantly simplify the FSS design. A prototype of the proposed FSS has been fabricated and measured. The measured results have favorable agreement with the simulated results, thus validating the FSS design. The proposed FSS can act as antenna radome and antenna decoupling structure, which can be widely used in multiband antennas, shared-aperture antennas, wide-angle scanning antenna arrays, and near-field loading, with high design flexibility.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 2","pages":"867-877"},"PeriodicalIF":4.1,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142179436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-23DOI: 10.1109/TMTT.2024.3441942
Zhicheng Lin;Kaizhe Guo;Hao Guo;Kam Man Shum;Ka Fai Chan;Chi Hou Chan
This article presents a $180mathit - 194$ -GHz eight-way (four-way differential) power amplifier co-designed with a power-combining antenna array in a 65-nm CMOS technology. The power-combining antenna array consists of four closely placed end-fed slot antennas, providing a low input impedance, a high radiation efficiency, and a compact layout. The proposed power-combining scheme can increase the output power of a power amplifier without causing the increment of the loss of the amplifier output matching/combining network, which is not possible for a conventional on-chip power combiner with a path number larger than 4 (two-differential). In the measurement, the power amplifier achieves a measured small-signal gain of 21.6 dB, a saturated radiated power of 18.2 dBm, a 1-dB-compression radiated power of 12.6 dBm, and a peak power added efficiency (PAE) of 6.6% at 184 GHz, with the antenna loss included. The measured directivity and saturated effective isotropic radiated power (EIRP) of the chip packaged with a hyperhemispherical silicon lens are 22.7 dBi and 40.9 dBm, respectively, at 184 GHz. The measured 3-dB bandwidth of the power amplifier is 14.1 GHz.
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