Pub Date : 2024-12-25DOI: 10.1109/TNS.2024.3523106
Hong Huang;Zhu An;Jingjun Zhu
There are two methods for implementing the $beta $ -decay induced X-ray spectroscopy (BIXS) analysis for tritium contents and depth profile in materials. One is the analytical BIXS method, which can provide tritium content information quickly, but cannot accurately consider the multiple scattering of electrons and geometric complexity. The other is the BIXS method based on Monte Carlo (MC) simulations, where the X-ray energy spectra generated at different depths need to be first obtained through the MC simulations, but the MC simulations are very time-consuming. In this article, a semi-analytical model is proposed to greatly reduce the calculation time of the MC-based BIXS method and simultaneously retain the calculation accuracy. In this model, the energy and angle distributions of electrons inside the tritium-containing sample at different depths are calculated by MC simulations and then combined with the differential cross sections and shape functions of bremsstrahlung radiation to calculate the corresponding external bremsstrahlung (EB) energy spectrum. The total semi-analytical X-ray energy spectra are compared with those obtained by MC simulations and found that they are in excellent agreement in both amplitude and shape, within 1% difference, and the calculation time is greatly reduced compared with the MC simulations. Furthermore, the semi-analytical BIXS method proposed in this article is applied to the previous experimental data and observed that the tritium content and depth profile obtained using the semi-analytical BIXS method are consistent with the results obtained by MC-based BIXS analysis, within 0.82% difference.
{"title":"A Semi-Analytical Model for Calculating the X-Ray Energy Spectrum of Thin Tritium-Containing Sample in BIXS Analysis","authors":"Hong Huang;Zhu An;Jingjun Zhu","doi":"10.1109/TNS.2024.3523106","DOIUrl":"https://doi.org/10.1109/TNS.2024.3523106","url":null,"abstract":"There are two methods for implementing the <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-decay induced X-ray spectroscopy (BIXS) analysis for tritium contents and depth profile in materials. One is the analytical BIXS method, which can provide tritium content information quickly, but cannot accurately consider the multiple scattering of electrons and geometric complexity. The other is the BIXS method based on Monte Carlo (MC) simulations, where the X-ray energy spectra generated at different depths need to be first obtained through the MC simulations, but the MC simulations are very time-consuming. In this article, a semi-analytical model is proposed to greatly reduce the calculation time of the MC-based BIXS method and simultaneously retain the calculation accuracy. In this model, the energy and angle distributions of electrons inside the tritium-containing sample at different depths are calculated by MC simulations and then combined with the differential cross sections and shape functions of bremsstrahlung radiation to calculate the corresponding external bremsstrahlung (EB) energy spectrum. The total semi-analytical X-ray energy spectra are compared with those obtained by MC simulations and found that they are in excellent agreement in both amplitude and shape, within 1% difference, and the calculation time is greatly reduced compared with the MC simulations. Furthermore, the semi-analytical BIXS method proposed in this article is applied to the previous experimental data and observed that the tritium content and depth profile obtained using the semi-analytical BIXS method are consistent with the results obtained by MC-based BIXS analysis, within 0.82% difference.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"82-92"},"PeriodicalIF":1.9,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-24DOI: 10.1109/TNS.2024.3521654
Ziheng Zhou;Changqing Feng;Yanghui Qin;Hantao Jing;Binbin Tian;Shubin Liu
Measuring the high-power proton beam distribution on the target is critical for the stable operation of a spallation neutron source or an accelerator-driven subcritical system (ADS). This work preliminarily implemented a step of a proposed methodology for indirectly measuring the proton beam spot using pinhole imaging by detecting back-streaming secondary gammas. A prototype gamma imaging system based on pixelated cadmium zinc telluride (CdZnTe) detectors was developed to serve as a foundation for implementing the proposed method. Each detector consists of an $11times 11$ pixel array, with a pixel pitch of 1.72 mm. Readout electronic modules for two detectors were designed and realized. The energy and timing information of anode channels is obtained by analog application-specific integrated circuits (ASICs) called JCF032EB based on charge-sensitive amplifiers (CSAs), while the cathode channel signals are read out using CSAs and analog-to-digital converters (ADCs). The anode channels have a maximum input charge of up to 49 fC, while the equivalent noise charge (ENC) of most channels is less than 0.1 fC. Energy correction methods based on depth sensing using the cathode-to-anode (C/A) ratio and election drift time were applied. According to test results using radioactive sources, more than half of the anode channels achieve an energy resolution [full-width at half-maximum (FWHM)] better than 1.8% at 662 keV after depth correction, with the best channel reaching better than 1.1%. The imaging results of a 137Cs point source verified the functioning of the gamma imaging system. To verify the practical feasibility of the imaging method, a nickel target was activated on the proton beam line of the Associated Proton beam Experiment Platform (APEP) at the China Spallation Neutron Source (CSNS) and then imaged by the prototype system, which produced the expected results.
{"title":"A Prototype Gamma Imaging System for Measuring High-Intensity Proton Beam Spots Based on Pixelated CdZnTe Detectors","authors":"Ziheng Zhou;Changqing Feng;Yanghui Qin;Hantao Jing;Binbin Tian;Shubin Liu","doi":"10.1109/TNS.2024.3521654","DOIUrl":"https://doi.org/10.1109/TNS.2024.3521654","url":null,"abstract":"Measuring the high-power proton beam distribution on the target is critical for the stable operation of a spallation neutron source or an accelerator-driven subcritical system (ADS). This work preliminarily implemented a step of a proposed methodology for indirectly measuring the proton beam spot using pinhole imaging by detecting back-streaming secondary gammas. A prototype gamma imaging system based on pixelated cadmium zinc telluride (CdZnTe) detectors was developed to serve as a foundation for implementing the proposed method. Each detector consists of an <inline-formula> <tex-math>$11times 11$ </tex-math></inline-formula> pixel array, with a pixel pitch of 1.72 mm. Readout electronic modules for two detectors were designed and realized. The energy and timing information of anode channels is obtained by analog application-specific integrated circuits (ASICs) called JCF032EB based on charge-sensitive amplifiers (CSAs), while the cathode channel signals are read out using CSAs and analog-to-digital converters (ADCs). The anode channels have a maximum input charge of up to 49 fC, while the equivalent noise charge (ENC) of most channels is less than 0.1 fC. Energy correction methods based on depth sensing using the cathode-to-anode (C/A) ratio and election drift time were applied. According to test results using radioactive sources, more than half of the anode channels achieve an energy resolution [full-width at half-maximum (FWHM)] better than 1.8% at 662 keV after depth correction, with the best channel reaching better than 1.1%. The imaging results of a 137Cs point source verified the functioning of the gamma imaging system. To verify the practical feasibility of the imaging method, a nickel target was activated on the proton beam line of the Associated Proton beam Experiment Platform (APEP) at the China Spallation Neutron Source (CSNS) and then imaged by the prototype system, which produced the expected results.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"936-945"},"PeriodicalIF":1.9,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-23DOI: 10.1109/TNS.2024.3521357
Michael H. L. S. Wang
One of the goals of the Deep Underground Neutrino Experiment (DUNE) is to use the massive underground liquid argon time projection chamber (LArTPC) detectors at its far site for multimessenger astronomy (MMA), in the detection of neutrinos from core-collapse supernovae (SNe). Its current baseline trigger strategy detects activity in the detector that is consistent with supernova (SN) neutrinos and saves the raw data for further offline analysis but provides no prompt pointing information crucial for optical follow-ups by other observatories. This approach is based on the assumption that prompt pointing determination using raw data is computationally prohibitive. In this article, we demonstrate a proof-of-concept based on applying extreme data reduction on the buffered SN data in the DUNE data acquisition (DAQ) system’s front-end computers using a machine learning (ML) workflow. This reduces the data by ~5 orders of magnitude, allowing a full track reconstruction to be carried out quickly on a single server. The total time to perform the ML-based data reduction and the full track reconstruction is less than the time to transfer the SN data back to Fermilab or a high-performance computing (HPC) center. This shows that prompt processing of raw SN data is possible and, in fact, trivial once the data have been reduced to reject radiological backgrounds, paving the way to a high-quality SN pointing trigger that is based on fully reconstructed data instead of trigger primitives (TPs).
{"title":"Machine Learning-Based Extreme Data Reduction for Prompt Supernova Pointing at DUNE","authors":"Michael H. L. S. Wang","doi":"10.1109/TNS.2024.3521357","DOIUrl":"https://doi.org/10.1109/TNS.2024.3521357","url":null,"abstract":"One of the goals of the Deep Underground Neutrino Experiment (DUNE) is to use the massive underground liquid argon time projection chamber (LArTPC) detectors at its far site for multimessenger astronomy (MMA), in the detection of neutrinos from core-collapse supernovae (SNe). Its current baseline trigger strategy detects activity in the detector that is consistent with supernova (SN) neutrinos and saves the raw data for further offline analysis but provides no prompt pointing information crucial for optical follow-ups by other observatories. This approach is based on the assumption that prompt pointing determination using raw data is computationally prohibitive. In this article, we demonstrate a proof-of-concept based on applying extreme data reduction on the buffered SN data in the DUNE data acquisition (DAQ) system’s front-end computers using a machine learning (ML) workflow. This reduces the data by ~5 orders of magnitude, allowing a full track reconstruction to be carried out quickly on a single server. The total time to perform the ML-based data reduction and the full track reconstruction is less than the time to transfer the SN data back to Fermilab or a high-performance computing (HPC) center. This shows that prompt processing of raw SN data is possible and, in fact, trivial once the data have been reduced to reject radiological backgrounds, paving the way to a high-quality SN pointing trigger that is based on fully reconstructed data instead of trigger primitives (TPs).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"678-683"},"PeriodicalIF":1.9,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-20DOI: 10.1109/TNS.2024.3520506
Alexandra-Gabriela Şerban;Andrea Coronetti;Rubén García Alía;Francesc Salvat-Pujol
The ubiquitous use of electronic devices in high-radiation environments requires robust methods for assessing and improving their resilience against single-event effects (SEEs) and, especially, single-event upsets (SEUs). In this study, SEU production induced by protons below 500 MeV in three commercial bulk planar static random access memories (SRAMs) manufactured on different standard CMOS technology nodes (from 250 to 40 nm) is investigated employing the Monte Carlo (MC) particle-transport code FLUKA. A rectangular parallelepiped (RPP) model is adopted to describe the device geometry, relying on the sensitive volume (SV) and the critical charge as effective parameters. Optimal values of these two parameters that maximize the agreement between simulated and experimental SEU production cross sections are found for the three considered devices. Parameter trends in the RPP model across technology nodes are identified, thus providing practical guidelines when modeling components manufactured on other technology nodes.
{"title":"RPP Model Trends Across Technology Nodes for the MC Simulation of SEUs in Commercial Bulk Planar CMOS SRAMs Under Proton Irradiation","authors":"Alexandra-Gabriela Şerban;Andrea Coronetti;Rubén García Alía;Francesc Salvat-Pujol","doi":"10.1109/TNS.2024.3520506","DOIUrl":"https://doi.org/10.1109/TNS.2024.3520506","url":null,"abstract":"The ubiquitous use of electronic devices in high-radiation environments requires robust methods for assessing and improving their resilience against single-event effects (SEEs) and, especially, single-event upsets (SEUs). In this study, SEU production induced by protons below 500 MeV in three commercial bulk planar static random access memories (SRAMs) manufactured on different standard CMOS technology nodes (from 250 to 40 nm) is investigated employing the Monte Carlo (MC) particle-transport code FLUKA. A rectangular parallelepiped (RPP) model is adopted to describe the device geometry, relying on the sensitive volume (SV) and the critical charge as effective parameters. Optimal values of these two parameters that maximize the agreement between simulated and experimental SEU production cross sections are found for the three considered devices. Parameter trends in the RPP model across technology nodes are identified, thus providing practical guidelines when modeling components manufactured on other technology nodes.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"133-146"},"PeriodicalIF":1.9,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10810445","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-19DOI: 10.1109/TNS.2024.3518173
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TNS.2024.3518173","DOIUrl":"https://doi.org/10.1109/TNS.2024.3518173","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 12","pages":"2616-2616"},"PeriodicalIF":1.9,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10807708","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-19DOI: 10.1109/TNS.2024.3513612
Zane W. Bell
{"title":"Search for Editor-in-Chief","authors":"Zane W. Bell","doi":"10.1109/TNS.2024.3513612","DOIUrl":"https://doi.org/10.1109/TNS.2024.3513612","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 12","pages":"2486-2486"},"PeriodicalIF":1.9,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10807702","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, quasi-vertical and lateral gallium nitride (GaN) Schottky barrier diodes (SBDs) with similar electrical parameters are irradiated with 200-keV protons at different fluences. The radiation-induced defects induced by irradiation affect carrier concentration and tunneling current, result in a slight decrease in the forward current and an increase in the reverse current of quasi-vertical GaN SBDs. In contrast, lateral GaN SBDs exhibit significant degradation in forward current characteristics and a reduction in reverse current postirradiation. Electrical parameter variations in the N$^{-}$ -GaN and N+-GaN layers of quasi-vertical SBDs, as well as changes in 2-D electron gas (2DEG) concentration at the AlGaN/GaN heterojunction interface in lateral diodes, are analyzed through C–V, transmission line model (TLM), and Hall measurement. By combining stopping and range of Ions in matter (SRIM) and technology computer-aided design (TCAD) simulations, the types and distributions of radiation-induced defects in both GaN SBDs are modeled to comprehensively reveal the degradation mechanisms in both devices under proton irradiation.
{"title":"Comparison of Proton Irradiation Effects on Electrical Properties of Quasi-Vertical and Lateral GaN Schottky Barrier Diodes","authors":"Yun Tang;Xintian Zhou;Boya Zhang;Mingwei Li;Yunpeng Jia;Dongqing Hu;Yu Wu;Lihao Wang;Bodian Li;Xuanwu Kang;Lei Wang;Yuanfu Zhao","doi":"10.1109/TNS.2024.3520476","DOIUrl":"https://doi.org/10.1109/TNS.2024.3520476","url":null,"abstract":"In this article, quasi-vertical and lateral gallium nitride (GaN) Schottky barrier diodes (SBDs) with similar electrical parameters are irradiated with 200-keV protons at different fluences. The radiation-induced defects induced by irradiation affect carrier concentration and tunneling current, result in a slight decrease in the forward current and an increase in the reverse current of quasi-vertical GaN SBDs. In contrast, lateral GaN SBDs exhibit significant degradation in forward current characteristics and a reduction in reverse current postirradiation. Electrical parameter variations in the N<inline-formula> <tex-math>$^{-}$ </tex-math></inline-formula>-GaN and N+-GaN layers of quasi-vertical SBDs, as well as changes in 2-D electron gas (2DEG) concentration at the AlGaN/GaN heterojunction interface in lateral diodes, are analyzed through C–V, transmission line model (TLM), and Hall measurement. By combining stopping and range of Ions in matter (SRIM) and technology computer-aided design (TCAD) simulations, the types and distributions of radiation-induced defects in both GaN SBDs are modeled to comprehensively reveal the degradation mechanisms in both devices under proton irradiation.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 1","pages":"17-23"},"PeriodicalIF":1.9,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-19DOI: 10.1109/TNS.2024.3513792
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3513792","DOIUrl":"https://doi.org/10.1109/TNS.2024.3513792","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 12","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10807701","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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