Pub Date : 2024-08-26DOI: 10.1109/TNS.2024.3449891
Yu Han;Tao Ying;He Zhu;Jianqun Yang;Xingji Li
To ensure the longevity and reliability of spacecraft during on-orbit missions, it is essential to protect components that do not satisfy the requirement of the radiation resistance with radiation shielding. With the advancement of commercial spaceflight, modern aerospace industries demand low cost and high efficiency for spacecraft designs. Traditional methods of radiation shielding enhancement are no longer adequate to meet these requirements. The optimization method for radiation shielding enhancement designed in this article organically combines the advantages of the ray-tracing (RT) method and the reverse Monte-Carlo (RMC) method, thereby avoiding the shortcomings of using either method alone. Simulation results demonstrate that this method not only ensures the accuracy of total ionizing dose (TID) simulation results for sensitive components but also enhances the efficiency of radiation shielding enhancement design, saving time in the design process. The accurate patching results designed by this method optimize the patching quality compared with traditional shielding design method, significantly reducing radiation shielding mass and conserving valuable payload resources.
{"title":"Efficient and Accurate Optimal Design Method for Radiation Shielding","authors":"Yu Han;Tao Ying;He Zhu;Jianqun Yang;Xingji Li","doi":"10.1109/TNS.2024.3449891","DOIUrl":"10.1109/TNS.2024.3449891","url":null,"abstract":"To ensure the longevity and reliability of spacecraft during on-orbit missions, it is essential to protect components that do not satisfy the requirement of the radiation resistance with radiation shielding. With the advancement of commercial spaceflight, modern aerospace industries demand low cost and high efficiency for spacecraft designs. Traditional methods of radiation shielding enhancement are no longer adequate to meet these requirements. The optimization method for radiation shielding enhancement designed in this article organically combines the advantages of the ray-tracing (RT) method and the reverse Monte-Carlo (RMC) method, thereby avoiding the shortcomings of using either method alone. Simulation results demonstrate that this method not only ensures the accuracy of total ionizing dose (TID) simulation results for sensitive components but also enhances the efficiency of radiation shielding enhancement design, saving time in the design process. The accurate patching results designed by this method optimize the patching quality compared with traditional shielding design method, significantly reducing radiation shielding mass and conserving valuable payload resources.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2475-2483"},"PeriodicalIF":1.9,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-22DOI: 10.1109/tns.2024.3447772
A. Shilpa, N V L Narasimha Murty
{"title":"Alphavoltaic Performance of 4H-SiC Schottky Barrier Diodes","authors":"A. Shilpa, N V L Narasimha Murty","doi":"10.1109/tns.2024.3447772","DOIUrl":"https://doi.org/10.1109/tns.2024.3447772","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"38 1","pages":""},"PeriodicalIF":1.8,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-21DOI: 10.1109/TNS.2024.3446850
Xiaoping Dong;Mingmin Huang;Yao Ma;Chengwen Fu;Mu He;Zhimei Yang;Yun Li;Min Gong
The single-event leakage current (SELC) mechanism of the silicon carbide (SiC) junction barrier Schottky (JBS) diode is thoroughly investigated in this work. A comprehensive physical model to quantify the degree of SELC for the JBS diode is also proposed. From the collected experimental results, it is found that the leakage current of the SiC JBS diode increased with the increase in both the reverse bias voltage under irradiation and the total fluence. According to the results of the current response during irradiation and the emission microscope (EMMI) after irradiation, it can be inferred that the leakage current degradation of the samples originated from the accumulation of the Schottky junction’s area with a barrier reduction by the ion-induced local high temperature. Taking the degradation mechanism into account, a novel physical model is developed with the help of TCAD simulations. This model clearly highlights the relationship between the degradation (i.e., Schottky barrier height reduction and amplification of the leakage current) and the irradiation conditions (i.e., reverse bias voltage and fluence). This work provides valuable insights into the underlying origins of the SELC effect and its potential mitigation in SiC JBS diodes.
{"title":"Mechanism and Physical Model of the Single-Event Leakage Current for SiC JBS Diodes","authors":"Xiaoping Dong;Mingmin Huang;Yao Ma;Chengwen Fu;Mu He;Zhimei Yang;Yun Li;Min Gong","doi":"10.1109/TNS.2024.3446850","DOIUrl":"10.1109/TNS.2024.3446850","url":null,"abstract":"The single-event leakage current (SELC) mechanism of the silicon carbide (SiC) junction barrier Schottky (JBS) diode is thoroughly investigated in this work. A comprehensive physical model to quantify the degree of SELC for the JBS diode is also proposed. From the collected experimental results, it is found that the leakage current of the SiC JBS diode increased with the increase in both the reverse bias voltage under irradiation and the total fluence. According to the results of the current response during irradiation and the emission microscope (EMMI) after irradiation, it can be inferred that the leakage current degradation of the samples originated from the accumulation of the Schottky junction’s area with a barrier reduction by the ion-induced local high temperature. Taking the degradation mechanism into account, a novel physical model is developed with the help of TCAD simulations. This model clearly highlights the relationship between the degradation (i.e., Schottky barrier height reduction and amplification of the leakage current) and the irradiation conditions (i.e., reverse bias voltage and fluence). This work provides valuable insights into the underlying origins of the SELC effect and its potential mitigation in SiC JBS diodes.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 10","pages":"2252-2259"},"PeriodicalIF":1.9,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-19DOI: 10.1109/tns.2024.3445502
J. Schacht, T. Brockmann, M. Marquardt, J. Recknagel, T. Schröder
{"title":"New Developments for the Trigger-Time-Event System for the W7-X Experiment","authors":"J. Schacht, T. Brockmann, M. Marquardt, J. Recknagel, T. Schröder","doi":"10.1109/tns.2024.3445502","DOIUrl":"https://doi.org/10.1109/tns.2024.3445502","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"1 1","pages":""},"PeriodicalIF":1.8,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, we mainly studied the proton irradiation effects on novel dual delta-doping GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The conventional heterojunction high-electron-mobility transistors (HFETs) were selected as control. The insensitivity of Co $^{60}~gamma $ -rays (up to 100 Mrad) indicates that displacement effects predominate in the degradation of threshold voltages ( $V_{mathrm {TH}}$ ) and drain current ( $I_{mathrm {DS}}$ ). Based on the incident depth of protons in device, there are two types of irradiation effects: uniform (thin target) and nonuniform (thick target). For the former, 3-, 40-, and 80-MeV protons were employed to explore the energy dependence in PHEMTs. It was found that the effect of protons on PHEMTs depends on nonionizing energy loss (NIEL), and it is possible to predict the impact of different protons on $V_{mathrm {TH}}$ by NIEL alone. As for nonuniform irradiation, the incident range of 150-keV protons in gated and ungated regions of both PHEMTs and HFETs determines the case in which $I_{mathrm {DS}}$ decreases, while $V_{mathrm {TH}}$ remains constant as the fluence increases. Finally, this novel PHEMT with a higher donor concentration (provided by double delta doping) and higher mobility (InGaAs channel) was found to have a greater radiation hardness than HFETs.
{"title":"Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors","authors":"Shuhao Hou;Shangli Dong;Jianqun Yang;Zhongli Liu;Enhao Guan;Jinhua Liu;Gang Lin;Guojian Shao;Yubao Zhang;Jicheng Jiang;Xingji Li","doi":"10.1109/TNS.2024.3445351","DOIUrl":"10.1109/TNS.2024.3445351","url":null,"abstract":"In this article, we mainly studied the proton irradiation effects on novel dual delta-doping GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The conventional heterojunction high-electron-mobility transistors (HFETs) were selected as control. The insensitivity of Co\u0000<inline-formula> <tex-math>$^{60}~gamma $ </tex-math></inline-formula>\u0000-rays (up to 100 Mrad) indicates that displacement effects predominate in the degradation of threshold voltages (\u0000<inline-formula> <tex-math>$V_{mathrm {TH}}$ </tex-math></inline-formula>\u0000) and drain current (\u0000<inline-formula> <tex-math>$I_{mathrm {DS}}$ </tex-math></inline-formula>\u0000). Based on the incident depth of protons in device, there are two types of irradiation effects: uniform (thin target) and nonuniform (thick target). For the former, 3-, 40-, and 80-MeV protons were employed to explore the energy dependence in PHEMTs. It was found that the effect of protons on PHEMTs depends on nonionizing energy loss (NIEL), and it is possible to predict the impact of different protons on \u0000<inline-formula> <tex-math>$V_{mathrm {TH}}$ </tex-math></inline-formula>\u0000 by NIEL alone. As for nonuniform irradiation, the incident range of 150-keV protons in gated and ungated regions of both PHEMTs and HFETs determines the case in which \u0000<inline-formula> <tex-math>$I_{mathrm {DS}}$ </tex-math></inline-formula>\u0000 decreases, while \u0000<inline-formula> <tex-math>$V_{mathrm {TH}}$ </tex-math></inline-formula>\u0000 remains constant as the fluence increases. Finally, this novel PHEMT with a higher donor concentration (provided by double delta doping) and higher mobility (InGaAs channel) was found to have a greater radiation hardness than HFETs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 9","pages":"2067-2076"},"PeriodicalIF":1.9,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-19DOI: 10.1109/tns.2024.3446309
Marvin Fuchs, Hendrik Krause, Timo Muscheid, Lukas Scheller, Luis E. Ardila-Perez, Oliver Sander
{"title":"Cross-Chip Partial Reconfiguration for the Initialisation of Modular and Scalable Heterogeneous Systems","authors":"Marvin Fuchs, Hendrik Krause, Timo Muscheid, Lukas Scheller, Luis E. Ardila-Perez, Oliver Sander","doi":"10.1109/tns.2024.3446309","DOIUrl":"https://doi.org/10.1109/tns.2024.3446309","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"29 1","pages":""},"PeriodicalIF":1.8,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1109/TNS.2024.3437929
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3437929","DOIUrl":"https://doi.org/10.1109/TNS.2024.3437929","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 8","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638257","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1109/TNS.2024.3435108
Recounts the career and contributions of Miguel Angel Aguirre.
讲述米格尔-安赫尔-阿吉雷的职业生涯和贡献。
{"title":"In Memoriam Miguel Angel Aguirre","authors":"","doi":"10.1109/TNS.2024.3435108","DOIUrl":"https://doi.org/10.1109/TNS.2024.3435108","url":null,"abstract":"Recounts the career and contributions of Miguel Angel Aguirre.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 8","pages":"1439-1439"},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638260","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：