The precision charge measurement of a gamma ray radiation detector consisting of scintillation crystals coupled with photomultiplier tubes (PMTs) is critical in the dark matter particle detection application. A high-resolution high-speed analog-to-digital converter (ADC) is required to digitize the amplitude of the generated pulse signals from the front-end readout electronics. In this article, we propose a novel hybrid ADC based on two-stage conversion to achieve high resolution and high sampling rate, and the key design technique of this ADC lies in optimizing the combination of successive approximation register (SAR) and time-to-digital converter (TDC) accuracy through system-level performance evaluation, ultimately achieving a high energy-efficiency ratio. A 14-bit hybrid ADC, which is composed of a 5-bit SAR, a 4-bit coarse TDC, and a 5-bit fine TDC, is proposed. A 16-channel prototype chip is designed in a 180-nm CMOS process with a 1.8/3.3 V power supply voltage. The die size is $2850times 3350~mu text {m}$ . A sampling rate of 3 MS/s is achieved at the clock frequency of 100 MHz, and the power consumption is 1.6 mW per channel. With the digital calibration, the proposed ADC achieves the differential nonlinearity (DNL) of +0.67/-0.58 LSB, the integral nonlinearity (INL) of +2.3/-0.91 LSB, the spurious free dynamic range (SFDR) of 81.59 dB, the effective number of bits (ENOB) of 11.22 bits, and the Figure of Merit (FoM) of 223.58 fJ/conv per channel.
{"title":"Design of a Multichannel, 14-bit, 3-MS/s Hybrid ADC Based on SAR-TDC Two-Stage Conversion for Dark Matter Particle Detection","authors":"Chunyang Yu;Boyuan Yang;Jingsi Cheng;Hongjiao Dong;Zhengyu Ren;Guini Zhao;Chen Zhao;Yi Qian;Wu Gao","doi":"10.1109/TNS.2025.3590195","DOIUrl":"https://doi.org/10.1109/TNS.2025.3590195","url":null,"abstract":"The precision charge measurement of a gamma ray radiation detector consisting of scintillation crystals coupled with photomultiplier tubes (PMTs) is critical in the dark matter particle detection application. A high-resolution high-speed analog-to-digital converter (ADC) is required to digitize the amplitude of the generated pulse signals from the front-end readout electronics. In this article, we propose a novel hybrid ADC based on two-stage conversion to achieve high resolution and high sampling rate, and the key design technique of this ADC lies in optimizing the combination of successive approximation register (SAR) and time-to-digital converter (TDC) accuracy through system-level performance evaluation, ultimately achieving a high energy-efficiency ratio. A 14-bit hybrid ADC, which is composed of a 5-bit SAR, a 4-bit coarse TDC, and a 5-bit fine TDC, is proposed. A 16-channel prototype chip is designed in a 180-nm CMOS process with a 1.8/3.3 V power supply voltage. The die size is <inline-formula> <tex-math>$2850times 3350~mu text {m}$ </tex-math></inline-formula>. A sampling rate of 3 MS/s is achieved at the clock frequency of 100 MHz, and the power consumption is 1.6 mW per channel. With the digital calibration, the proposed ADC achieves the differential nonlinearity (DNL) of +0.67/-0.58 LSB, the integral nonlinearity (INL) of +2.3/-0.91 LSB, the spurious free dynamic range (SFDR) of 81.59 dB, the effective number of bits (ENOB) of 11.22 bits, and the Figure of Merit (FoM) of 223.58 fJ/conv per channel.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3145-3154"},"PeriodicalIF":1.9,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-30DOI: 10.1109/TNS.2025.3594306
T. Daros;N. C. Cábia;J. Piteira;M. C. Schneider
This article presents the design, model, and characterization of a floating gate dosimeter (FGDOS), fabricated using standard complementary metal-oxide-semiconductor (CMOS) technology. The proposed model incorporates a parameter to account for trapped charge on the oxide, thereby providing deeper physical insight into the device’s behavior. We present a comprehensive comparison between the proposed model and experimental data, validating the accuracy of the proposed model. In addition, we propose a characterization method to extract key parameters of the FGDOS. Experimental validation was conducted using a 6 MeV linear accelerator and an X-ray diffractometer, with results demonstrating the model’s accuracy across a dose range of over 100 Gy (H2O). Finally, we show that, after each reset of the floating gate (FG), the dose can be determined from a normalized sensitivity, which is independent of the previous history of the sensor. This means that the FGDOS can be reused several times and still keep the same dependence of the normalized sensitivity on the dose.
{"title":"Design, Modeling, and Characterization of a Floating Gate Dosimeter in Standard CMOS Technology for Sensor Reuse","authors":"T. Daros;N. C. Cábia;J. Piteira;M. C. Schneider","doi":"10.1109/TNS.2025.3594306","DOIUrl":"https://doi.org/10.1109/TNS.2025.3594306","url":null,"abstract":"This article presents the design, model, and characterization of a floating gate dosimeter (FGDOS), fabricated using standard complementary metal-oxide-semiconductor (CMOS) technology. The proposed model incorporates a parameter to account for trapped charge on the oxide, thereby providing deeper physical insight into the device’s behavior. We present a comprehensive comparison between the proposed model and experimental data, validating the accuracy of the proposed model. In addition, we propose a characterization method to extract key parameters of the FGDOS. Experimental validation was conducted using a 6 MeV linear accelerator and an X-ray diffractometer, with results demonstrating the model’s accuracy across a dose range of over 100 Gy (H<sub>2</sub>O). Finally, we show that, after each reset of the floating gate (FG), the dose can be determined from a normalized sensitivity, which is independent of the previous history of the sensor. This means that the FGDOS can be reused several times and still keep the same dependence of the normalized sensitivity on the dose.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3069-3076"},"PeriodicalIF":1.9,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-28DOI: 10.1109/TNS.2025.3593241
Yuzhu Liu;Shiwei Zhao;Pengfei Zhai;Teng Zhang;Yu Dong;Jie Liu
Heavy-ion-induced single-event leakage current (SELC) in silicon carbide (SiC) power MOSFETs is investigated. Our experimental data for 1200 V SiC power MOSFETs with varying gate oxide thicknesses reveal that a thicker oxide reduces SELC in the drain–gate path but increases SELC in the drain–source path, suggesting a redistribution of damage in the device. Based on these experimental results, we propose the Lightning Leader model. This model suggests that a conductive path formed by heavy-ion passing through the gate oxide diverts current flow from the source to the low-resistance path in the gate, thereby mitigating damage to the source p–n junction region and altering the overall damage distribution in the SiC power MOSFET. Besides, we also discuss the SELC step extraction method as well as the impact of micro-dose effect and its annealing behavior.
研究了碳化硅功率mosfet中重离子感应的单事件漏电流（SELC）。我们对具有不同栅氧化层厚度的1200 V SiC功率mosfet的实验数据表明，较厚的氧化物降低了漏极-栅极路径中的SELC，但增加了漏极-源极路径中的SELC，这表明器件中的损伤重新分布。基于这些实验结果，我们提出了闪电先锋模型。该模型表明，重离子通过栅极氧化物形成的导电路径将电流从源转移到栅极中的低阻路径，从而减轻了源p-n结区域的损伤，并改变了SiC功率MOSFET中的整体损伤分布。此外，我们还讨论了SELC步进萃取方法以及微剂量效应的影响及其退火行为。
{"title":"Heavy-Ion Effects in SiC Power MOSFETs With Different Gate Oxide Thicknesses","authors":"Yuzhu Liu;Shiwei Zhao;Pengfei Zhai;Teng Zhang;Yu Dong;Jie Liu","doi":"10.1109/TNS.2025.3593241","DOIUrl":"https://doi.org/10.1109/TNS.2025.3593241","url":null,"abstract":"Heavy-ion-induced single-event leakage current (SELC) in silicon carbide (SiC) power MOSFETs is investigated. Our experimental data for 1200 V SiC power MOSFETs with varying gate oxide thicknesses reveal that a thicker oxide reduces SELC in the drain–gate path but increases SELC in the drain–source path, suggesting a redistribution of damage in the device. Based on these experimental results, we propose the Lightning Leader model. This model suggests that a conductive path formed by heavy-ion passing through the gate oxide diverts current flow from the source to the low-resistance path in the gate, thereby mitigating damage to the source p–n junction region and altering the overall damage distribution in the SiC power MOSFET. Besides, we also discuss the SELC step extraction method as well as the impact of micro-dose effect and its annealing behavior.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3033-3043"},"PeriodicalIF":1.9,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-24DOI: 10.1109/TNS.2025.3589259
Trace Wallace;Nathaniel A. Dodds;Aldo I. Vidana;R. Nathan Nowlin;B. Dodd;H. J. Barnaby;M. Spear;J. Neuendank;Jeffrey S. Kauppila;Timothy D. Haeffner;Grant D. Poe;Sean T. Vibbert;Lloyd W. Massengill;J. L. Taggart;B. Foran;Stefano Bonaldo
This article presents an analysis of the total ionizing dose (TID) response of n-channel transistors in the 12LP fin-based field effect transistor (FinFET) technology, with a focus on the impact of fin count per transistor. Previous studies, such as those by Vidana (2023), have shown increased off-state current ($I_{text {DS}-text {off}}$ ) in n-channel FinFETs caused by charge buildup in shallow trench isolation (STI) oxides. However, these trends vary based on the number of fins used in the device. This work introduces a physics-based data-driven model supported by TCAD simulations to explain the fin count dependence on TID response. The model identifies variability in charge trapping in different STI regions, specifically highlighting the role of silicon nitride layers in mitigating leakage in devices with two or fewer fins. This research not only corroborates prior findings but also provides new insights into the electrostatic sensitivities unique to nanoscale FinFETs, offering a better understanding of TID effects and potential device hardening strategies.
{"title":"The Effect of Number of Fins per Transistor on the TID Response of 12LP FinFET Technology","authors":"Trace Wallace;Nathaniel A. Dodds;Aldo I. Vidana;R. Nathan Nowlin;B. Dodd;H. J. Barnaby;M. Spear;J. Neuendank;Jeffrey S. Kauppila;Timothy D. Haeffner;Grant D. Poe;Sean T. Vibbert;Lloyd W. Massengill;J. L. Taggart;B. Foran;Stefano Bonaldo","doi":"10.1109/TNS.2025.3589259","DOIUrl":"https://doi.org/10.1109/TNS.2025.3589259","url":null,"abstract":"This article presents an analysis of the total ionizing dose (TID) response of n-channel transistors in the 12LP fin-based field effect transistor (FinFET) technology, with a focus on the impact of fin count per transistor. Previous studies, such as those by Vidana (2023), have shown increased <sc>off</small>-state current (<inline-formula> <tex-math>$I_{text {DS}-text {off}}$ </tex-math></inline-formula>) in n-channel FinFETs caused by charge buildup in shallow trench isolation (STI) oxides. However, these trends vary based on the number of fins used in the device. This work introduces a physics-based data-driven model supported by TCAD simulations to explain the fin count dependence on TID response. The model identifies variability in charge trapping in different STI regions, specifically highlighting the role of silicon nitride layers in mitigating leakage in devices with two or fewer fins. This research not only corroborates prior findings but also provides new insights into the electrostatic sensitivities unique to nanoscale FinFETs, offering a better understanding of TID effects and potential device hardening strategies.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2317-2323"},"PeriodicalIF":1.9,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To implement the linear injector for the proposed Jinhua light source (JHLS) project, a 1-m C-band constant gradient (CG) traveling-wave (TW) accelerating structure is developed with the aim of generating a gradient of $geq 40$ MV/m. This C-band structure works at a mode of $3pi $ /4 with a relatively low group velocity varying from $0.016c$ to $0.009c$ to increase the accelerating gradient at a given input power. It employs a cell shape with elliptical irises and circular arc tops to reduce the surface electric and magnetic fields and to achieve an average shunt impedance of 94 M$Omega $ /m through optimizations. This results in an accelerating gradient of 40 MV/m with an input power of 29.6 MW, which means this structure can convert the input power into the accelerating gradient with a high efficiency. Moreover, a new technique is utilized for the design of couplers, significantly simplifying the whole optimization process and achieving high accuracy. After fabrication, the structure was precisely tuned, and results from low-power radio frequency (RF) measurements and the comparison with simulated values are also presented in this article.
为了实现提出的金华光源（JHLS）项目的线性注入器，开发了1 m c波段恒定梯度（CG）行波（TW）加速结构，目的是产生$geq 40$ MV/m的梯度。这种c波段结构工作在$3pi $ /4模式下，以相对较低的群速度从$0.016c$到$0.009c$变化，以增加给定输入功率下的加速梯度。它采用椭圆虹膜和圆弧顶的电池形状，通过优化减少了表面电场和磁场，平均分流阻抗为94 M $Omega $ / M。在29.6 MW的输入功率下产生40 MV/m的加速梯度，这意味着该结构可以高效地将输入功率转化为加速梯度。此外，采用了一种新的设计方法，大大简化了整个优化过程，实现了较高的精度。在制作完成后，对结构进行了精确调谐，并给出了低功率射频（RF）测量结果以及与仿真值的比较。
{"title":"Design, Fabrication, and Cold Test of a High-Efficiency C-Band Traveling-Wave Accelerating Structure","authors":"Yihao Zhang;Zhicheng Huang;Yelong Wei;Li Sun;Zexin Cao;Chengzhe Wang;Guangyao Feng;Luigi Faillace;David Alesini","doi":"10.1109/TNS.2025.3591648","DOIUrl":"https://doi.org/10.1109/TNS.2025.3591648","url":null,"abstract":"To implement the linear injector for the proposed Jinhua light source (JHLS) project, a 1-m C-band constant gradient (CG) traveling-wave (TW) accelerating structure is developed with the aim of generating a gradient of <inline-formula> <tex-math>$geq 40$ </tex-math></inline-formula> MV/m. This C-band structure works at a mode of <inline-formula> <tex-math>$3pi $ </tex-math></inline-formula>/4 with a relatively low group velocity varying from <inline-formula> <tex-math>$0.016c$ </tex-math></inline-formula> to <inline-formula> <tex-math>$0.009c$ </tex-math></inline-formula> to increase the accelerating gradient at a given input power. It employs a cell shape with elliptical irises and circular arc tops to reduce the surface electric and magnetic fields and to achieve an average shunt impedance of 94 M<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>/m through optimizations. This results in an accelerating gradient of 40 MV/m with an input power of 29.6 MW, which means this structure can convert the input power into the accelerating gradient with a high efficiency. Moreover, a new technique is utilized for the design of couplers, significantly simplifying the whole optimization process and achieving high accuracy. After fabrication, the structure was precisely tuned, and results from low-power radio frequency (RF) measurements and the comparison with simulated values are also presented in this article.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2868-2876"},"PeriodicalIF":1.9,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11091508","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-22DOI: 10.1109/TNS.2025.3591512
Hao Jiang;Xiaodong Xu;Tao Ying;Xueqiang Yu;Jianqun Yang;Rui Chen;Yanan Liang;Xingji Li
This study employs different types and energies of heavy ions to irradiate AlGaN/GaN high electron mobility transistors (HEMTs), inducing defects with a non-uniform depth distribution in the GaN epitaxial layer beneath the non-gate region. By integrating experimental and simulation approaches, we investigate the variation patterns of the device’s electrical performance as a function of irradiation fluence. Through electrical performance testing and simulations using extreme-environment radiation effect technology computer aided design (ERETCAD) software, it was observed that heavy ion-induced damage is confined to the GaN epitaxial layer beneath the non-gate region, the saturated drain current (${I} _{mathbf {ds}}$ ) decreases with increasing irradiation fluence, and the threshold voltage (${V} _{mathbf {th}}$ ) of the device remains unchanged. Heavy ion radiation introduces displacement defects in the GaN layer, and as the distance from the 2-D electron gas (2DEG) increases, the Coulomb scattering effect of these defects on carriers diminishes. Consequently, by accounting for the scattering effects of radiation-induced charged defects on carriers, the traditional non-ionizing energy loss (NIEL) value is refined. This adjustment leads to an equivalent degradation phenomenon where the ${I} _{mathbf {ds}}$ under different heavy ion irradiations correlates with the total effective non-ionizing energy deposition (TNID${}_{mathbf {effective}}$ ).
{"title":"Effect of Heavy Ion Radiation on Electrical Performance of AlGaN/GaN HEMTs in Non-Gate Region","authors":"Hao Jiang;Xiaodong Xu;Tao Ying;Xueqiang Yu;Jianqun Yang;Rui Chen;Yanan Liang;Xingji Li","doi":"10.1109/TNS.2025.3591512","DOIUrl":"https://doi.org/10.1109/TNS.2025.3591512","url":null,"abstract":"This study employs different types and energies of heavy ions to irradiate AlGaN/GaN high electron mobility transistors (HEMTs), inducing defects with a non-uniform depth distribution in the GaN epitaxial layer beneath the non-gate region. By integrating experimental and simulation approaches, we investigate the variation patterns of the device’s electrical performance as a function of irradiation fluence. Through electrical performance testing and simulations using extreme-environment radiation effect technology computer aided design (ERETCAD) software, it was observed that heavy ion-induced damage is confined to the GaN epitaxial layer beneath the non-gate region, the saturated drain current (<inline-formula> <tex-math>${I} _{mathbf {ds}}$ </tex-math></inline-formula>) decreases with increasing irradiation fluence, and the threshold voltage (<inline-formula> <tex-math>${V} _{mathbf {th}}$ </tex-math></inline-formula>) of the device remains unchanged. Heavy ion radiation introduces displacement defects in the GaN layer, and as the distance from the 2-D electron gas (2DEG) increases, the Coulomb scattering effect of these defects on carriers diminishes. Consequently, by accounting for the scattering effects of radiation-induced charged defects on carriers, the traditional non-ionizing energy loss (NIEL) value is refined. This adjustment leads to an equivalent degradation phenomenon where the <inline-formula> <tex-math>${I} _{mathbf {ds}}$ </tex-math></inline-formula> under different heavy ion irradiations correlates with the total effective non-ionizing energy deposition (TNID<inline-formula> <tex-math>${}_{mathbf {effective}}$ </tex-math></inline-formula>).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3044-3051"},"PeriodicalIF":1.9,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-21DOI: 10.1109/TNS.2025.3586533
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2025.3586533","DOIUrl":"https://doi.org/10.1109/TNS.2025.3586533","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11087430","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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