The correlation between neutron energy and neutron-induced soft error rate (SER) is crucial for estimating the impact on electronic devices fabricated using complementary metal-oxide-semiconductor (CMOS) technology in diverse neutron environments, including those found in high-energy physics experiments, aviation settings, and so on. This article presents an investigation conducted independently at China spallation neutron source (CSNS) using the Back-n white neutron source and atmospheric neutron irradiation spectrometer (ANIS) neutron source to directly measure single-event upset (SEU) effects of the configuration random access memory (CRAM) and block random access memory (BRAM) in 20-nm CMOS technology-based UltraScale Kintex FPGA. By recording the frequency of SEU events and the time of flight (TOF), SEU cross sections can be calculated for different energies. Experiment in situ indicates a coherent alignment of different outcomes under neutron irradiation from Back-n and ANIS, despite their different neutron energy spectra. The SEU threshold energy is estimated to be $0.69~pm ~0.076$ MeV for CRAM and $0.80~pm ~0.013$ MeV for BRAM. The measured cross sections can reach saturation of $6.9times 10^{-15}$ cm2/bit and $1.6times 10^{-14}$ cm2/bit for CRAM and BRAM, respectively, while the neutron energy is about 20 MeV.
{"title":"Measurement of Neutron-Induced Single-Event Upset Cross Section of UltraScale Kintex FPGA Using Time-of-Flight Technique","authors":"Yao Teng;Changqing Feng;Zhixin Tan;Zhengtao Liu;Zhizhen Qin;Songsong Tang;Ruirui Fan;Bin Zhou;Zhiliang Hu;Lei Zhao;Shubin Liu;Haofan Bai;Jiangbo Bai;Jie Bao;Ping Cao;Qiping Chen;Yonghao Chen;Wenhao Duan;Anchuan Fan;Minhao Gu;Changcai Han;Zijie Han;Guozhu He;Yongcheng He;Yang Hong;Yiwei Hu;Hanxiong Huang;Wei Jiang;Zhijie Jiang;Ling Kang;Changlin Lan;Bo Li;Feng Li;Qiang Li;Xiao Li;Yang Li;Jie Liu;Rong Liu;Yina Liu;Guangyuan Luan;Changjun Ning;Yijia Qiu;Jie Ren;Wenkai Ren;Zhizhou Ren;Xichao Ruan;Zhaohui Song;Kang Sun;Jingyu Tang;Shengda Tang;Jincheng Wang;Lijiao Wang;Pengcheng Wang;Zhaohui Wang;Zhongwei Wen;Xiaoguang Wu;Xuan Wu;Zepeng Wu;Cong Xia;Likun Xie;Han Yi;Tao Yu;Yongji Yu;Guohui Zhang;Hangchang Zhang;Qiwei Zhang;Xianpeng Zhang;Yuliang Zhang;Zhiyong Zhang;Maoyuan Zhao;Zhihao Zhou;Kejun Zhu;Chong Zou","doi":"10.1109/TNS.2024.3482881","DOIUrl":"https://doi.org/10.1109/TNS.2024.3482881","url":null,"abstract":"The correlation between neutron energy and neutron-induced soft error rate (SER) is crucial for estimating the impact on electronic devices fabricated using complementary metal-oxide-semiconductor (CMOS) technology in diverse neutron environments, including those found in high-energy physics experiments, aviation settings, and so on. This article presents an investigation conducted independently at China spallation neutron source (CSNS) using the Back-n white neutron source and atmospheric neutron irradiation spectrometer (ANIS) neutron source to directly measure single-event upset (SEU) effects of the configuration random access memory (CRAM) and block random access memory (BRAM) in 20-nm CMOS technology-based UltraScale Kintex FPGA. By recording the frequency of SEU events and the time of flight (TOF), SEU cross sections can be calculated for different energies. Experiment in situ indicates a coherent alignment of different outcomes under neutron irradiation from Back-n and ANIS, despite their different neutron energy spectra. The SEU threshold energy is estimated to be \u0000<inline-formula> <tex-math>$0.69~pm ~0.076$ </tex-math></inline-formula>\u0000 MeV for CRAM and \u0000<inline-formula> <tex-math>$0.80~pm ~0.013$ </tex-math></inline-formula>\u0000 MeV for BRAM. The measured cross sections can reach saturation of \u0000<inline-formula> <tex-math>$6.9times 10^{-15}$ </tex-math></inline-formula>\u0000 cm2/bit and \u0000<inline-formula> <tex-math>$1.6times 10^{-14}$ </tex-math></inline-formula>\u0000 cm2/bit for CRAM and BRAM, respectively, while the neutron energy is about 20 MeV.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 12","pages":"2545-2553"},"PeriodicalIF":1.9,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-18DOI: 10.1109/TNS.2024.3479589
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TNS.2024.3479589","DOIUrl":"https://doi.org/10.1109/TNS.2024.3479589","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 10","pages":"2335-2335"},"PeriodicalIF":1.9,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10723097","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142450917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, we report a $beta $ -Ga2O3-based solar-blind Schottky diode $alpha $ particle detector. The 20- $mu $ m unintentionally doped $beta $ -Ga2O3 drift region was grown on n $^{+} beta $ -Ga2O3 substrate. XRD rocking curve revealed high crystalline quality with a narrow full-width at half-maximum (FWHM) of 45.15 arcsec for the (002) diffraction peak. The bandgap of as-grown sample, estimated by absorption spectroscopy, was approximately 4.74 eV, placing it within the solar-blind region. The $3times 3$ mm square $beta $ -Ga2O3-based vertical detectors were fabricated by depositing Ni/Au Schottky contacts on drift region and Ti/Au ohmic contacts on substrate, respectively. Detection of241Am $alpha $ particle was performed under various reverse biases reaching 33% for energy resolution and 90% for charge collection efficiency (CCE) at −140 V. The measurement under 365-nm illumination indicated strong near-UV resistance for the $beta $ -Ga2O3-based detector compared with the SiC-based detector. These results demonstrate the promise of $beta $ -Ga2O3 detectors for solar-blind $alpha $ particle detection in field environments.
在本文中，我们报道了一个$beta $ - ga2o3基太阳盲肖特基二极管$alpha $粒子探测器。在n $^{+} beta $ - ga2o3衬底上生长了20- $mu $ m无意掺杂的$beta $ - ga2o3漂移区。XRD摇摆曲线显示，（002）衍射峰的半峰全宽（FWHM）为45.15 arcsec，晶体质量较高。通过吸收光谱估计，生长样品的带隙约为4.74 eV，处于太阳盲区。通过在漂移区沉积Ni/Au肖特基触点，在衬底沉积Ti/Au欧姆触点，制备了$3times 3$ mm方$beta $ - ga2o3垂直探测器。对241am $alpha $粒子的检测在不同的反向偏置下达到33% for energy resolution and 90% for charge collection efficiency (CCE) at −140 V. The measurement under 365-nm illumination indicated strong near-UV resistance for the $beta $ -Ga2O3-based detector compared with the SiC-based detector. These results demonstrate the promise of $beta $ -Ga2O3 detectors for solar-blind $alpha $ particle detection in field environments.
{"title":"β-Ga₂O₃-Based Solar-Blind Schottky Diode Alpha Particle Detector","authors":"Hezhi Zhang;Jing Di;Man Hoi Wong;Song Zhang;Zengyin Dong;Xiaochuan Xia;Zhenzhong Zhang;Hongwei Liang","doi":"10.1109/TNS.2024.3482431","DOIUrl":"https://doi.org/10.1109/TNS.2024.3482431","url":null,"abstract":"In this article, we report a \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3-based solar-blind Schottky diode \u0000<inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>\u0000 particle detector. The 20-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m unintentionally doped \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 drift region was grown on n\u0000<inline-formula> <tex-math>$^{+} beta $ </tex-math></inline-formula>\u0000-Ga2O3 substrate. XRD rocking curve revealed high crystalline quality with a narrow full-width at half-maximum (FWHM) of 45.15 arcsec for the (002) diffraction peak. The bandgap of as-grown sample, estimated by absorption spectroscopy, was approximately 4.74 eV, placing it within the solar-blind region. The \u0000<inline-formula> <tex-math>$3times 3$ </tex-math></inline-formula>\u0000 mm square \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3-based vertical detectors were fabricated by depositing Ni/Au Schottky contacts on drift region and Ti/Au ohmic contacts on substrate, respectively. Detection of241Am \u0000<inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>\u0000 particle was performed under various reverse biases reaching 33% for energy resolution and 90% for charge collection efficiency (CCE) at −140 V. The measurement under 365-nm illumination indicated strong near-UV resistance for the \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3-based detector compared with the SiC-based detector. These results demonstrate the promise of \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 detectors for solar-blind \u0000<inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>\u0000 particle detection in field environments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 12","pages":"2597-2601"},"PeriodicalIF":1.9,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-16DOI: 10.1109/TNS.2024.3481367
Leshan Qiu;Yun Bai;Zewei Dong;Jieqin Ding;Jilong Hao;Yidan Tang;Xiaoli Tian;Chengzhan Li;Xinyu Liu
The safe operating area (SOA) for the drain bias of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) in space applications has been limited due to the single-event effects (SEEs) induced by heavy-ion irradiation. At a drain bias lower than 5% of the rated voltage, SiC MOSFETs are typically considered to be in the charge collection region, which usually does not cause destructive damage. However, in this article, the degradation induced by heavy ions at drain biases below 50 V for 1200 V SiC MOSFETs has been observed. During irradiation, the drain leakage current ( ${I} {_{text {DSS}}}$ ) continuously increased with the accumulated dose. Meanwhile, the ${I} {_{text {DSS}}}$ degradation showed a correlation between the drain bias and the cell topology of SiC MOSFETs. After irradiation, unacceptable ${I} {_{text {DSS}}}$ degradation was still observed, but it recovered by about 40% after a month of room-temperature annealing. ${I} {_{text {DSS}}}$ also returned to its preirradiation level under negative gate bias, suggesting that the increase in ${I} {_{text {DSS}}}$ could be associated with a leakage current path through the channel region, resulting from defects within the oxide or at the SiO2/SiC interface, likely introduced by the microdose effect. The gate leakage current ( ${I} {_{text {GSS}}}$ ) was tested within the temperature range of 25 °C–250 °C to investigate the temperature impact for gate oxide latent damage activation. As the drain bias increased during irradiation, ${I} {_{text {GSS}}}$ also increased significantly at higher temperatures, suggesting that latent damage within the gate oxide had been formed during irradiation.
由于重离子辐照引起的单次事件效应（SEE），碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）在太空应用中漏极偏置的安全工作区（SOA）一直受到限制。在漏极偏压低于额定电压的 5%时，SiC MOSFET 通常被认为处于电荷收集区，通常不会造成破坏性损坏。然而，本文观察了 1200 V SiC MOSFET 在漏极偏压低于 50 V 时由重离子引起的退化。在辐照过程中，漏极漏电流（${I} {_{text {DSS}}$ ）随着累积剂量的增加而持续增加。同时，${I} {_{text {DSS}}$ 的衰减显示出 SiC MOSFET 的漏极偏置和单元拓扑结构之间的相关性。辐照后，仍然观察到不可接受的 ${I} {_{text {DSS}}$ 退化，但经过一个月的室温退火后，退化程度恢复了约 40%。 在负栅极偏压条件下，{I} {_{text {DSS}}$ 也恢复到了辐照前的水平，这表明{I} {_{text {DSS}}$ 的增加可能与通过沟道区的漏电流路径有关，该路径由氧化物内部或 SiO2/SiC 界面上的缺陷造成，可能是由微剂量效应引入的。在 25 °C-250 °C 的温度范围内测试了栅极漏电流（${I} {_{text {GSS}}$ ），以研究温度对栅极氧化物潜伏损伤激活的影响。随着辐照过程中漏极偏压的增加，{I} {_{text {GSS}}$ 在较高温度下也显著增加，这表明栅极氧化物内部在辐照过程中形成了潜在损伤。
{"title":"Degradation Under Low Drain Bias Induced by Heavy Ion in SiC MOSFETs","authors":"Leshan Qiu;Yun Bai;Zewei Dong;Jieqin Ding;Jilong Hao;Yidan Tang;Xiaoli Tian;Chengzhan Li;Xinyu Liu","doi":"10.1109/TNS.2024.3481367","DOIUrl":"https://doi.org/10.1109/TNS.2024.3481367","url":null,"abstract":"The safe operating area (SOA) for the drain bias of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) in space applications has been limited due to the single-event effects (SEEs) induced by heavy-ion irradiation. At a drain bias lower than 5% of the rated voltage, SiC MOSFETs are typically considered to be in the charge collection region, which usually does not cause destructive damage. However, in this article, the degradation induced by heavy ions at drain biases below 50 V for 1200 V SiC MOSFETs has been observed. During irradiation, the drain leakage current (\u0000<inline-formula> <tex-math>${I} {_{text {DSS}}}$ </tex-math></inline-formula>\u0000) continuously increased with the accumulated dose. Meanwhile, the \u0000<inline-formula> <tex-math>${I} {_{text {DSS}}}$ </tex-math></inline-formula>\u0000 degradation showed a correlation between the drain bias and the cell topology of SiC MOSFETs. After irradiation, unacceptable \u0000<inline-formula> <tex-math>${I} {_{text {DSS}}}$ </tex-math></inline-formula>\u0000 degradation was still observed, but it recovered by about 40% after a month of room-temperature annealing. \u0000<inline-formula> <tex-math>${I} {_{text {DSS}}}$ </tex-math></inline-formula>\u0000 also returned to its preirradiation level under negative gate bias, suggesting that the increase in \u0000<inline-formula> <tex-math>${I} {_{text {DSS}}}$ </tex-math></inline-formula>\u0000 could be associated with a leakage current path through the channel region, resulting from defects within the oxide or at the SiO2/SiC interface, likely introduced by the microdose effect. The gate leakage current (\u0000<inline-formula> <tex-math>${I} {_{text {GSS}}}$ </tex-math></inline-formula>\u0000) was tested within the temperature range of 25 °C–250 °C to investigate the temperature impact for gate oxide latent damage activation. As the drain bias increased during irradiation, \u0000<inline-formula> <tex-math>${I} {_{text {GSS}}}$ </tex-math></inline-formula>\u0000 also increased significantly at higher temperatures, suggesting that latent damage within the gate oxide had been formed during irradiation.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2377-2385"},"PeriodicalIF":1.9,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-16DOI: 10.1109/TNS.2024.3481421
Yifu Zhou;Wei Wu;Jinxi Li;Yifei Liu;Wenbing Wang;Xutong Wang
The system-generated electromagnetic pulse (SGEMP) is generated when an electronic system is exposed to the radiation environment. Due to the difficulty of experiments, numerical simulation has become a powerful tool in SGEMP research and in predicting SGEMP response of a given system. Furthermore, since the ionization of air has a strong effect on the SGEMP response, the simulation of air plasma plays an important role in the SGEMP simulation. In this work, an SGEMP simulation code based on a hybrid air plasma model is developed to simulate the SGEMP responses in cylindrical cavities. The simulation results are compared with experiments at different air pressures in order to validate the SGEMP simulation code. The simulation results agree well with experiments at pressures in the range of near vacuum to 3 torr. The effects of input parameters are also discussed. Simulation results show that the information on the angular distribution of emitted electrons is crucial in reproducing experimental results. The model developed in this article can be useful for SGEMP simulation study and for predicting experimental outputs.
{"title":"Development of an SGEMP Simulation Code Based on a Hybrid Plasma Model and Its Validation","authors":"Yifu Zhou;Wei Wu;Jinxi Li;Yifei Liu;Wenbing Wang;Xutong Wang","doi":"10.1109/TNS.2024.3481421","DOIUrl":"https://doi.org/10.1109/TNS.2024.3481421","url":null,"abstract":"The system-generated electromagnetic pulse (SGEMP) is generated when an electronic system is exposed to the radiation environment. Due to the difficulty of experiments, numerical simulation has become a powerful tool in SGEMP research and in predicting SGEMP response of a given system. Furthermore, since the ionization of air has a strong effect on the SGEMP response, the simulation of air plasma plays an important role in the SGEMP simulation. In this work, an SGEMP simulation code based on a hybrid air plasma model is developed to simulate the SGEMP responses in cylindrical cavities. The simulation results are compared with experiments at different air pressures in order to validate the SGEMP simulation code. The simulation results agree well with experiments at pressures in the range of near vacuum to 3 torr. The effects of input parameters are also discussed. Simulation results show that the information on the angular distribution of emitted electrons is crucial in reproducing experimental results. The model developed in this article can be useful for SGEMP simulation study and for predicting experimental outputs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 12","pages":"2554-2564"},"PeriodicalIF":1.9,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/TNS.2024.3479201
Tao Liu;Rongyao Ma;Shaohong Li;Jingyu Tao;Zhiyu Wang;Hao Wu;Yiren Yu;Zijun Cheng;Shengdong Hu
Threshold voltage ( $V_{text {TH}}$ ) degradation mechanisms induced by the ionizing irradiation for the 1200-V double-trench (DT) silicon-carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFET) are investigated. The ionizing irradiation experiment is performed with different gate-source voltages ( $V_{text {GS}}$ ) and total ionizing doses (TIDs). The maximum $V_{text {TH}}$ shifts are −1.92 V for a $V_{text {GS}}$ of 0 V and a TID of 500 krad(Si), and −4.73 V for a $V_{text {GS}}$ of 20 V and a TID of 150 krad(Si), respectively. A novel method of investigation on TID-induced $V_{text {TH}}$ shift from energy domain and numerical simulation with the aid of the TCAD tool is exploited. Extensive simulations indicate that donor-like oxide traps with energy larger than 0.55 eV dominate the negative $V_{text {TH}}$ shift. The summation of two Gaussian distribution models is used to emulate trapped hole energy distribution, and the relative errors between measured and simulated $V_{text {TH}}$ shifts are within ±13.36% at a TID of 100 krad(Si).
研究了 1200 V 双沟槽（DT）碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）在电离辐照诱导下的阈值电压（$V_{text {TH}}$ ）衰减机制。电离辐照实验是在不同的栅源电压（$V_{text {GS}}$）和总电离剂量（TIDs）下进行的。当 $V_{text {GS}$ 为 0 V 和 TID 为 500 krad(Si) 时，最大 $V_{text {TH}}$ 漂移为-1.92 V；当 $V_{text {GS}$ 为 20 V 和 TID 为 150 krad(Si) 时，最大 $V_{text {TH}}$ 漂移为-4.73 V。在 TCAD 工具的帮助下，利用一种新方法从能域和数值模拟方面研究了 TID 引起的 $V_{text {TH}}$ 漂移。大量的模拟结果表明，能量大于 0.55 eV 的供体类氧化物陷阱主导了 $V_{text {TH}}$ 的负偏移。在 100 krad(Si) 的 TID 条件下，测量值与模拟值之间的相对误差在 ±13.36% 以内。
{"title":"Comparative Investigation on Ionizing Irradiation- Induced Threshold Voltage Degradation for 1200-V DT SiC MOSFET by Experiment and Simulation","authors":"Tao Liu;Rongyao Ma;Shaohong Li;Jingyu Tao;Zhiyu Wang;Hao Wu;Yiren Yu;Zijun Cheng;Shengdong Hu","doi":"10.1109/TNS.2024.3479201","DOIUrl":"https://doi.org/10.1109/TNS.2024.3479201","url":null,"abstract":"Threshold voltage (\u0000<inline-formula> <tex-math>$V_{text {TH}}$ </tex-math></inline-formula>\u0000) degradation mechanisms induced by the ionizing irradiation for the 1200-V double-trench (DT) silicon-carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFET) are investigated. The ionizing irradiation experiment is performed with different gate-source voltages (\u0000<inline-formula> <tex-math>$V_{text {GS}}$ </tex-math></inline-formula>\u0000) and total ionizing doses (TIDs). The maximum \u0000<inline-formula> <tex-math>$V_{text {TH}}$ </tex-math></inline-formula>\u0000 shifts are −1.92 V for a \u0000<inline-formula> <tex-math>$V_{text {GS}}$ </tex-math></inline-formula>\u0000 of 0 V and a TID of 500 krad(Si), and −4.73 V for a \u0000<inline-formula> <tex-math>$V_{text {GS}}$ </tex-math></inline-formula>\u0000 of 20 V and a TID of 150 krad(Si), respectively. A novel method of investigation on TID-induced \u0000<inline-formula> <tex-math>$V_{text {TH}}$ </tex-math></inline-formula>\u0000 shift from energy domain and numerical simulation with the aid of the TCAD tool is exploited. Extensive simulations indicate that donor-like oxide traps with energy larger than 0.55 eV dominate the negative \u0000<inline-formula> <tex-math>$V_{text {TH}}$ </tex-math></inline-formula>\u0000 shift. The summation of two Gaussian distribution models is used to emulate trapped hole energy distribution, and the relative errors between measured and simulated \u0000<inline-formula> <tex-math>$V_{text {TH}}$ </tex-math></inline-formula>\u0000 shifts are within ±13.36% at a TID of 100 krad(Si).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2386-2392"},"PeriodicalIF":1.9,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/TNS.2024.3479291
Yi Ge;Jingang Liang;Qiong Zhang;Decheng Niu;Ya Jin;Quanwen Zhang;Liming Lv
Compact pulsed neutron generators emit fast neutrons that interact with the medium by inelastic scattering, producing characteristic gamma rays that reflect the concentrations of important elements, such as carbon and oxygen. The detection of these elements is crucial for applications such as detecting explosives, organic carbon, and density. In actual measurement, a proportion of the capture gamma rays is subtracted from the gamma rays collected during the neutron burst to obtain a net inelastic gamma spectrum. However, the different shapes of pulsed neutron burst due to hardware limitations can affect the subtraction factors of capture gamma rays. To address this challenge, an adaptive method for acquiring the net inelastic gamma energy spectra based on pulsed neutron burst shape modeling is proposed. The distribution function of capture gamma ray over time in the pulse period is derived based on modeling of the pulsed neutron burst shape and convolution. The fall and stable point on the pulsed neutron burst shape are adaptively identified through gradients and autocorrelation coefficients. Finally, a more accurate net inelastic gamma spectrum is obtained by calculating the subtraction factors during the burst based on the fit capture gamma time spectra. The different pulsed neutron burst shapes and environmental parameters are considered, and the adaptability and accuracy of our proposed method are verified through the Monte Carlo simulation.
{"title":"Adaptive Modeling Pulsed Neutron Burst Shape for Acquiring Net Inelastic Gamma Spectra","authors":"Yi Ge;Jingang Liang;Qiong Zhang;Decheng Niu;Ya Jin;Quanwen Zhang;Liming Lv","doi":"10.1109/TNS.2024.3479291","DOIUrl":"https://doi.org/10.1109/TNS.2024.3479291","url":null,"abstract":"Compact pulsed neutron generators emit fast neutrons that interact with the medium by inelastic scattering, producing characteristic gamma rays that reflect the concentrations of important elements, such as carbon and oxygen. The detection of these elements is crucial for applications such as detecting explosives, organic carbon, and density. In actual measurement, a proportion of the capture gamma rays is subtracted from the gamma rays collected during the neutron burst to obtain a net inelastic gamma spectrum. However, the different shapes of pulsed neutron burst due to hardware limitations can affect the subtraction factors of capture gamma rays. To address this challenge, an adaptive method for acquiring the net inelastic gamma energy spectra based on pulsed neutron burst shape modeling is proposed. The distribution function of capture gamma ray over time in the pulse period is derived based on modeling of the pulsed neutron burst shape and convolution. The fall and stable point on the pulsed neutron burst shape are adaptively identified through gradients and autocorrelation coefficients. Finally, a more accurate net inelastic gamma spectrum is obtained by calculating the subtraction factors during the burst based on the fit capture gamma time spectra. The different pulsed neutron burst shapes and environmental parameters are considered, and the adaptability and accuracy of our proposed method are verified through the Monte Carlo simulation.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2350-2360"},"PeriodicalIF":1.9,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Developing scintillators with excellent luminescent properties is necessary for further boosting the power conversion efficiency (PCE) of radioluminescent (RL) nuclear battery. In this work, the electrical properties of RL nuclear battery based on ultrabright Cs3Cu2I5:Tl single crystal scintillator are investigated. The optimal open-circuit voltage and short-circuit current of Cs3Cu2I5:Tl RL nuclear battery are 0.37 V and $3.267~mu $ A/cm2, corresponding to the maximum output power density of 898 nW/cm2, which is, respectively, 1.18 and 2.95 times that of the RL nuclear battery based on ZnS:Ag and Lu2-xYxSiO5:Ce (LYSO:Ce) reference scintillators. After continuous X-ray irradiation with a total dose of approximately 6600 Gy, the luminescence properties of Cs3Cu2I5:Tl scintillator remained above 90% of its initial value. This work demonstrates the potential of Cs3Cu2I5:Tl scintillator serving as RL nuclear battery with high PCE and long-term stability.
{"title":"High-Performance Radioluminescent Nuclear Battery Based on Ultrabright Cs₃Cu₂I₅:Tl Single Crystal Scintillator","authors":"Runlong Gao;Xiao Ouyang;Qian Wang;Pengying Wan;Wuying Ma;Xue Du;Yuntao Wu;Linyue Liu;Xiaoping Ouyang","doi":"10.1109/TNS.2024.3476119","DOIUrl":"https://doi.org/10.1109/TNS.2024.3476119","url":null,"abstract":"Developing scintillators with excellent luminescent properties is necessary for further boosting the power conversion efficiency (PCE) of radioluminescent (RL) nuclear battery. In this work, the electrical properties of RL nuclear battery based on ultrabright Cs3Cu2I5:Tl single crystal scintillator are investigated. The optimal open-circuit voltage and short-circuit current of Cs3Cu2I5:Tl RL nuclear battery are 0.37 V and \u0000<inline-formula> <tex-math>$3.267~mu $ </tex-math></inline-formula>\u0000A/cm2, corresponding to the maximum output power density of 898 nW/cm2, which is, respectively, 1.18 and 2.95 times that of the RL nuclear battery based on ZnS:Ag and Lu2-xYxSiO5:Ce (LYSO:Ce) reference scintillators. After continuous X-ray irradiation with a total dose of approximately 6600 Gy, the luminescence properties of Cs3Cu2I5:Tl scintillator remained above 90% of its initial value. This work demonstrates the potential of Cs3Cu2I5:Tl scintillator serving as RL nuclear battery with high PCE and long-term stability.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 12","pages":"2530-2535"},"PeriodicalIF":1.9,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-07DOI: 10.1109/TNS.2024.3474746
Lorenzo Gonzales;Salvatore Danzeca;Salvatore Fiore;Iztok Kramberger
This article presents the results of dynamic measurements of 3-D multilevel cell (MLC) NAND flash memories in a mixed-field radiation facility CERN High-energy AcceleRator Mixed field/facility (CHARM), CERN. The results show that the behavior of devices is comparable to tests with specific high energy particles, such as high energy protons, heavy ions, and to TID tests. The observed TID and single-event effects (SEEs) in flash memories from the existing relevant work are also observed in mixed field, making the environment suitable for an accelerated system level test. As the CHARM hadron energy spectrum is comparable to the low Earth orbit (LEO) environment, the facility is appropriate as an accelerated test for space applications. Furthermore, the volumetric characteristics of the devices can be observed in this 3-D radiation facility. Additionally, bad bit (BB) spread was observed, and the necessary radiation induced errors in NAND devices are discussed.
本文介绍了在欧洲核子研究中心（CERN）的混合场辐射设施 CERN High-energy AcceleRator Mixed Field/facility（CHARM）中对三维多级单元（MLC）NAND 闪存进行动态测量的结果。结果表明，器件的行为可与特定高能粒子（如高能质子、重离子）的测试以及 TID 测试相媲美。从现有相关工作中观察到的闪存中的 TID 和单事件效应 (SEE) 也在混合场中观察到，这使得环境适合于加速系统级测试。由于 CHARM 强子能谱与低地球轨道（LEO）环境相当，因此该设施适合作为空间应用的加速测试。此外，在这种三维辐射设施中还可以观察到设备的体积特性。此外，还观察到了坏位（BB）扩散，并讨论了必要的辐射诱导 NAND 器件中的误差。
{"title":"Mixed-Field Radiation of 3-D MLC Flash Memories for Space Applications","authors":"Lorenzo Gonzales;Salvatore Danzeca;Salvatore Fiore;Iztok Kramberger","doi":"10.1109/TNS.2024.3474746","DOIUrl":"https://doi.org/10.1109/TNS.2024.3474746","url":null,"abstract":"This article presents the results of dynamic measurements of 3-D multilevel cell (MLC)\u0000<sc>NAND</small>\u0000 flash memories in a mixed-field radiation facility CERN High-energy AcceleRator Mixed field/facility (CHARM), CERN. The results show that the behavior of devices is comparable to tests with specific high energy particles, such as high energy protons, heavy ions, and to TID tests. The observed TID and single-event effects (SEEs) in flash memories from the existing relevant work are also observed in mixed field, making the environment suitable for an accelerated system level test. As the CHARM hadron energy spectrum is comparable to the low Earth orbit (LEO) environment, the facility is appropriate as an accelerated test for space applications. Furthermore, the volumetric characteristics of the devices can be observed in this 3-D radiation facility. Additionally, bad bit (BB) spread was observed, and the necessary radiation induced errors in\u0000<sc>NAND</small>\u0000 devices are discussed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2400-2408"},"PeriodicalIF":1.9,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10706133","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：