This work describes the architecture and the experimental results from the characterization of the lithium-drifted silicon (Si(Li)) detector module, which constitutes the building block of the tracker in the general antiparticle spectrometer (GAPS) experiment to search for dark matter. The instrument is designed for the identification of low-energy cosmic anti-nuclei (antiprotons, antideuterons, and antihelium) to be performed during an Antarctic long-duration balloon flight scheduled for late 2025. The GAPS Si(Li) tracker, that is the core of the instrument, is the assembly of 252 modules, each comprised of four Si(Li) detectors and a full custom-integrated circuit designed for detector readout and produced in a commercial 180-nm planar CMOS technology. A general overview of the detector module architecture and its components is provided, together with a description of the test setup and the experimental results obtained from the characterization of the low-noise analog readout channel. In order to verify the effective operation of the entire module, results concerning the detection of X-rays from a 241Am source and cosmic muons are also provided.
{"title":"X-Ray and Particle Detection With the Si(Li) Tracker Module of the GAPS Experiment","authors":"Massimo Manghisoni;Luca Ghislotti;Paolo Lazzaroni;Valerio Re;Elisa Riceputi;Lodovico Ratti;Lorenzo Fabris;Mirko Boezio;Gianluigi Zampa;Mengjiao Xiao","doi":"10.1109/TNS.2025.3616408","DOIUrl":"https://doi.org/10.1109/TNS.2025.3616408","url":null,"abstract":"This work describes the architecture and the experimental results from the characterization of the lithium-drifted silicon (Si(Li)) detector module, which constitutes the building block of the tracker in the general antiparticle spectrometer (GAPS) experiment to search for dark matter. The instrument is designed for the identification of low-energy cosmic anti-nuclei (antiprotons, antideuterons, and antihelium) to be performed during an Antarctic long-duration balloon flight scheduled for late 2025. The GAPS Si(Li) tracker, that is the core of the instrument, is the assembly of 252 modules, each comprised of four Si(Li) detectors and a full custom-integrated circuit designed for detector readout and produced in a commercial 180-nm planar CMOS technology. A general overview of the detector module architecture and its components is provided, together with a description of the test setup and the experimental results obtained from the characterization of the low-noise analog readout channel. In order to verify the effective operation of the entire module, results concerning the detection of X-rays from a <sup>241</sup>Am source and cosmic muons are also provided.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 11","pages":"3578-3586"},"PeriodicalIF":1.9,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To assess the biological effects of lunar surface radiation, two silicon-based detectors, a dosimeter and a spectrometer, were developed as science payloads for the Commercial Lunar Payload Services (CLPS) program. They were designed to measure the linear energy transfer (LET) and energy spectra of charged particles originating from galactic cosmic rays (GCRs) and solar energetic particles (SEPs). The dosimeter uses a thick and a thin silicon sensor to measure lower and higher LET particles, respectively. The spectrometer uses the same silicon sensors and adds a cesium iodide (CsI) scintillator behind them, followed by a third silicon sensor. They were tested with the He, C, Si, and Fe ion beams modulated by different thicknesses of polymethyl methacrylate (PMMA) at the Heavy Ion Medical Accelerator in Chiba (HIMAC) to simulate heavy ions with a wide range of LET present on the lunar surface. Monte Carlo simulations were performed with the same geometry as the experimental setup to calibrate the analog-to-digital converter (ADC) channels of the sensors to LET values. A fairly linear relationship was observed between the measured peak channels and the simulated LET values across a broad LET range. However, a slight deviation from linearity was observed in the high LET region for the heavily modulated Fe ion beams. The energy calibration of the spectrometer showed that the incident proton energies could be reconstructed from the energy deposits in the stacked sensors. These results indicate that the developed dosimeter and spectrometer are suitable for measuring the LET and energy spectra of charged particles from GCRs and SEPs on the lunar surface and can provide valuable information on the biological effects of lunar surface radiation.
{"title":"Calibration of Silicon-Based Detectors to Measure Lunar Surface Particles Using Heavy Ion Beams","authors":"Sukwon Youn;Uk-Won Nam;Sunghwan Kim;Bobae Kim;Hongjoo Kim;Hwanbae Park;Won-Kee Park;Jongdae Sohn;Chae Kyung Sim;Young-Jun Choi;Insoo Jun;Sung-Joon Ye","doi":"10.1109/TNS.2025.3616363","DOIUrl":"https://doi.org/10.1109/TNS.2025.3616363","url":null,"abstract":"To assess the biological effects of lunar surface radiation, two silicon-based detectors, a dosimeter and a spectrometer, were developed as science payloads for the Commercial Lunar Payload Services (CLPS) program. They were designed to measure the linear energy transfer (LET) and energy spectra of charged particles originating from galactic cosmic rays (GCRs) and solar energetic particles (SEPs). The dosimeter uses a thick and a thin silicon sensor to measure lower and higher LET particles, respectively. The spectrometer uses the same silicon sensors and adds a cesium iodide (CsI) scintillator behind them, followed by a third silicon sensor. They were tested with the He, C, Si, and Fe ion beams modulated by different thicknesses of polymethyl methacrylate (PMMA) at the Heavy Ion Medical Accelerator in Chiba (HIMAC) to simulate heavy ions with a wide range of LET present on the lunar surface. Monte Carlo simulations were performed with the same geometry as the experimental setup to calibrate the analog-to-digital converter (ADC) channels of the sensors to LET values. A fairly linear relationship was observed between the measured peak channels and the simulated LET values across a broad LET range. However, a slight deviation from linearity was observed in the high LET region for the heavily modulated Fe ion beams. The energy calibration of the spectrometer showed that the incident proton energies could be reconstructed from the energy deposits in the stacked sensors. These results indicate that the developed dosimeter and spectrometer are suitable for measuring the LET and energy spectra of charged particles from GCRs and SEPs on the lunar surface and can provide valuable information on the biological effects of lunar surface radiation.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 11","pages":"3587-3597"},"PeriodicalIF":1.9,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-26DOI: 10.1109/TNS.2025.3614665
Hao Huang;Ying Wang;Huolin Huang;Xinxing Fei;Biao Sun;Yanxing Song;Fei Cao
This work studies the mitigation effects of a double buffer layer structure on single-event burnout (SEB) based on a p-GaN gate GaN/AlGaN high-electron mobility transistor. The structure forms a potential barrier between the GaN buffer layer and the GaN channel layer and produces a quantum well between the two buffer layers. This design effectively delays the transmission of heavy particle induced charges and significantly improves the SEB tolerance of the device. Compared with the SEB threshold voltage of 250 V for conventional p-GaN HEMT devices under Ta particle irradiation with linear energy transfer (LET) = 0.6 pC/$mu $ m, the hardened design achieves a threshold of 460 V. Experimental verification by wafer testing and tantalum heavy-ion irradiation with an energy of 2006.4 MeV shows that the results are highly consistent with simulation predictions.
{"title":"A Reliable Single-Event Burnout Hardening Method for p-GaN HEMTs: Using Dual-Layer Buffer Structure","authors":"Hao Huang;Ying Wang;Huolin Huang;Xinxing Fei;Biao Sun;Yanxing Song;Fei Cao","doi":"10.1109/TNS.2025.3614665","DOIUrl":"https://doi.org/10.1109/TNS.2025.3614665","url":null,"abstract":"This work studies the mitigation effects of a double buffer layer structure on single-event burnout (SEB) based on a p-GaN gate GaN/AlGaN high-electron mobility transistor. The structure forms a potential barrier between the GaN buffer layer and the GaN channel layer and produces a quantum well between the two buffer layers. This design effectively delays the transmission of heavy particle induced charges and significantly improves the SEB tolerance of the device. Compared with the SEB threshold voltage of 250 V for conventional p-GaN HEMT devices under Ta particle irradiation with linear energy transfer (LET) = 0.6 pC/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m, the hardened design achieves a threshold of 460 V. Experimental verification by wafer testing and tantalum heavy-ion irradiation with an energy of 2006.4 MeV shows that the results are highly consistent with simulation predictions.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 11","pages":"3515-3522"},"PeriodicalIF":1.9,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The study of high-altitude electromagnetic pulse (HEMP) coupling with overhead power lines is crucial for assessing potential damage to power systems. This article presents a method that utilizes two deep neural networks (DNNs) in conjunction with theoretical analysis to rapidly compute HEMP coupling with overhead lines in the range of thousands of kilometers. This approach accounts for the varying characteristics of HEMP at different observation points and takes approximately 19.64 s on a notebook computer to compute the spatial distribution of the coupled voltage, which is about 2.88 million times faster than numerical methods. This efficiency reduces computational demands and demonstrates significant potential for applications in conventional nuclear physics. The results indicate that the spatial distribution of the peak coupled voltage resembles a “double egg yolk,” different from the smiley face of the HEMP. The results also show that the relationships between coupled voltage and blast parameters differ significantly from those observed in HEMP scenarios.
{"title":"Numerical Study of HEMP Coupling With Overhead Lines in Large Range by Using Deep Neural Networks","authors":"Haiyan Xie;Hailiang Qiao;Yu Liu;Yong Li;Taijiao Du;Shaohua Huang","doi":"10.1109/TNS.2025.3614449","DOIUrl":"https://doi.org/10.1109/TNS.2025.3614449","url":null,"abstract":"The study of high-altitude electromagnetic pulse (HEMP) coupling with overhead power lines is crucial for assessing potential damage to power systems. This article presents a method that utilizes two deep neural networks (DNNs) in conjunction with theoretical analysis to rapidly compute HEMP coupling with overhead lines in the range of thousands of kilometers. This approach accounts for the varying characteristics of HEMP at different observation points and takes approximately 19.64 s on a notebook computer to compute the spatial distribution of the coupled voltage, which is about 2.88 million times faster than numerical methods. This efficiency reduces computational demands and demonstrates significant potential for applications in conventional nuclear physics. The results indicate that the spatial distribution of the peak coupled voltage resembles a “double egg yolk,” different from the smiley face of the HEMP. The results also show that the relationships between coupled voltage and blast parameters differ significantly from those observed in HEMP scenarios.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 11","pages":"3551-3560"},"PeriodicalIF":1.9,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-24DOI: 10.1109/TNS.2025.3613858
Liru Qiu;Xinzhi Zhou;Jialiang Zhu;Tao Xu;Hailin Wang
Current assessments of primary loop hot leg temperature in nuclear power plants rely on conservative uncertainty quantification, where underexplored process measurement uncertainties hinder operational optimization. To address this, we develop a model of the thermal resistor tube socket temperature measurement process in HPR1000 using a convolutional neural network (CNN) modeling method with a loss function with physical information and a dynamic time factor (DTF-CNN-PINN). Validation against Fuqing Unit 5 operational data demonstrates: 1) high-fidelity temporal coherence under dynamic thermal-hydraulic conditions; 2) a mean squared error of 0.0076 in temperature field reconstruction; and 3) a $2~^{circ }$ C accuracy improvement over computational fluid dynamics (CFD) benchmarks. This work systematically models the temperature measurement process in nuclear reactor primary pipelines while also providing analytical redundancy for physical sensors.
{"title":"Modeling for Measurement Process of Thermal Resistor Tube Socket in Primary Loop Hot Leg of HPR1000 Using Machine Learning","authors":"Liru Qiu;Xinzhi Zhou;Jialiang Zhu;Tao Xu;Hailin Wang","doi":"10.1109/TNS.2025.3613858","DOIUrl":"https://doi.org/10.1109/TNS.2025.3613858","url":null,"abstract":"Current assessments of primary loop hot leg temperature in nuclear power plants rely on conservative uncertainty quantification, where underexplored process measurement uncertainties hinder operational optimization. To address this, we develop a model of the thermal resistor tube socket temperature measurement process in HPR1000 using a convolutional neural network (CNN) modeling method with a loss function with physical information and a dynamic time factor (DTF-CNN-PINN). Validation against Fuqing Unit 5 operational data demonstrates: 1) high-fidelity temporal coherence under dynamic thermal-hydraulic conditions; 2) a mean squared error of 0.0076 in temperature field reconstruction; and 3) a <inline-formula> <tex-math>$2~^{circ }$ </tex-math></inline-formula>C accuracy improvement over computational fluid dynamics (CFD) benchmarks. This work systematically models the temperature measurement process in nuclear reactor primary pipelines while also providing analytical redundancy for physical sensors.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 11","pages":"3501-3514"},"PeriodicalIF":1.9,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-18DOI: 10.1109/TNS.2025.3605514
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2025.3605514","DOIUrl":"https://doi.org/10.1109/TNS.2025.3605514","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11172725","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-10DOI: 10.1109/TNS.2025.3608446
Qinyu Bao;Yao Tong;Guanghui Yang;Zhijiang Shao
Controlling nonlinear dynamic systems poses significant challenges in process systems engineering (PSE) due to their complex nonlinear dynamics, time-varying parameters, and vulnerability to external disturbances. This study proposes a robust real-time control framework that synergistically integrates moving horizon estimation (MHE) with nonlinear model predictive control (NMPC) to address these challenges in practical engineering applications. To enhance computational efficiency and mitigate online delays, an advanced-step strategy—comprising advanced-step NMPC (asNMPC) and advanced-step MHE (asMHE)—is introduced, leveraging offline precomputation and online correction. The proposed methodology demonstrates significant potential for controlling nuclear energy systems, particularly in managing the intricate dynamics of the high-temperature gas-cooled reactor pebble-bed module (HTR-PM). Two representative control scenarios were designed for the nuclear steam supply system (NSSS) module to experimentally validate the framework. The results showcase superior tracking accuracy, robust disturbance rejection, and enhanced real-time computational efficiency, affirming the approach’s effectiveness and resilience in highly nonlinear environments with stringent real-time demands. This work provides both theoretical insights and practical guidance for controlling complex industrial processes, such as those in nuclear energy systems, advancing the field of nonlinear control.
{"title":"A Fast Dynamic Optimization Framework for Modular High-Temperature Gas-Cooled Reactors Power Plants: An Integrated asMHE-asNMPC Approach","authors":"Qinyu Bao;Yao Tong;Guanghui Yang;Zhijiang Shao","doi":"10.1109/TNS.2025.3608446","DOIUrl":"https://doi.org/10.1109/TNS.2025.3608446","url":null,"abstract":"Controlling nonlinear dynamic systems poses significant challenges in process systems engineering (PSE) due to their complex nonlinear dynamics, time-varying parameters, and vulnerability to external disturbances. This study proposes a robust real-time control framework that synergistically integrates moving horizon estimation (MHE) with nonlinear model predictive control (NMPC) to address these challenges in practical engineering applications. To enhance computational efficiency and mitigate online delays, an advanced-step strategy—comprising advanced-step NMPC (asNMPC) and advanced-step MHE (asMHE)—is introduced, leveraging offline precomputation and online correction. The proposed methodology demonstrates significant potential for controlling nuclear energy systems, particularly in managing the intricate dynamics of the high-temperature gas-cooled reactor pebble-bed module (HTR-PM). Two representative control scenarios were designed for the nuclear steam supply system (NSSS) module to experimentally validate the framework. The results showcase superior tracking accuracy, robust disturbance rejection, and enhanced real-time computational efficiency, affirming the approach’s effectiveness and resilience in highly nonlinear environments with stringent real-time demands. This work provides both theoretical insights and practical guidance for controlling complex industrial processes, such as those in nuclear energy systems, advancing the field of nonlinear control.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 11","pages":"3484-3500"},"PeriodicalIF":1.9,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article presents a novel digital temperature sensing scheme operating over a wide range, integrating a high-temperature-coefficient-of-frequency (TCF) microelectromechanical systems (MEMS) oscillator (205.65 ppm/°C) with a field-programmable gate array (FPGA)-based single-chain time-to-digital converter (TDC). The system employs an iterative compensation calibration method, utilizing data from $- 40~^{circ }$ C to $80~^{circ }$ C, to mitigate temperature drift. This calibration improves the TDC root mean square (rms) resolution from 34.88 to 23.55 ps. Testing shows that temperature-dependent errors in the uncalibrated system reach a maximum of $0.53~^{circ }$ C (average $0.243~^{circ }$ C), primarily due to oscillator drift and variations in the delay chain. After calibration, high accuracy is maintained between $20~^{circ }$ C and $50~^{circ }$ C, with errors consistently below $0.01~^{circ }$ C. Performance degrades beyond $50~^{circ }$ C due to increased phase noise, yet the maximum error at $70~^{circ }$ C is only $0.06~^{circ }$ C. The average error across the $20~^{circ }$ C–$70~^{circ }$ C range is significantly reduced to $0.019~^{circ }$ C. The self-calibrating scheme eliminates external sensors, enabling compact and low-cost temperature sensing suitable for various harsh embedded environments.
{"title":"A MEMS Oscillator and TDC-Based Temperature Sensing Architecture With Embedded Calibration","authors":"Jingtao Yu;Zihan Yu;Changrong Liu;Baoqing Nie;Dacheng Xu","doi":"10.1109/TNS.2025.3605918","DOIUrl":"https://doi.org/10.1109/TNS.2025.3605918","url":null,"abstract":"This article presents a novel digital temperature sensing scheme operating over a wide range, integrating a high-temperature-coefficient-of-frequency (TCF) microelectromechanical systems (MEMS) oscillator (205.65 ppm/°C) with a field-programmable gate array (FPGA)-based single-chain time-to-digital converter (TDC). The system employs an iterative compensation calibration method, utilizing data from <inline-formula> <tex-math>$- 40~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$80~^{circ }$ </tex-math></inline-formula>C, to mitigate temperature drift. This calibration improves the TDC root mean square (rms) resolution from 34.88 to 23.55 ps. Testing shows that temperature-dependent errors in the uncalibrated system reach a maximum of <inline-formula> <tex-math>$0.53~^{circ }$ </tex-math></inline-formula>C (average <inline-formula> <tex-math>$0.243~^{circ }$ </tex-math></inline-formula>C), primarily due to oscillator drift and variations in the delay chain. After calibration, high accuracy is maintained between <inline-formula> <tex-math>$20~^{circ }$ </tex-math></inline-formula>C and <inline-formula> <tex-math>$50~^{circ }$ </tex-math></inline-formula>C, with errors consistently below <inline-formula> <tex-math>$0.01~^{circ }$ </tex-math></inline-formula>C. Performance degrades beyond <inline-formula> <tex-math>$50~^{circ }$ </tex-math></inline-formula>C due to increased phase noise, yet the maximum error at <inline-formula> <tex-math>$70~^{circ }$ </tex-math></inline-formula>C is only <inline-formula> <tex-math>$0.06~^{circ }$ </tex-math></inline-formula>C. The average error across the <inline-formula> <tex-math>$20~^{circ }$ </tex-math></inline-formula>C–<inline-formula> <tex-math>$70~^{circ }$ </tex-math></inline-formula>C range is significantly reduced to <inline-formula> <tex-math>$0.019~^{circ }$ </tex-math></inline-formula>C. The self-calibrating scheme eliminates external sensors, enabling compact and low-cost temperature sensing suitable for various harsh embedded environments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 10","pages":"3442-3450"},"PeriodicalIF":1.9,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145339574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigates the effect of different gate biases on the leakage current of p-type GaN high electron mobility transistors (HEMTs) under heavy ion irradiation. Utilizing Ta ion irradiation, the leakage degradation at the gate bias $V_{mathrm {gs}}$ range of 0 to −5 V was studied. The most severe degradation was observed at approximately $V_{mathrm {gs}}=-3$ V. Electrical measurements revealed a 20% positive shift in threshold voltage (at $V_{mathrm {gs}}=-3$ V), a two times increase in on-resistance, a reduction in Schottky barrier height, and a significant shift in the ideality factor after heavy ion exposure. Technology computer-aided design (TCAD) simulations indicated that increasing the magnitude of negative gate bias enhanced the internal electric field strength, while the lattice temperature exhibited a decreasing trend. The analysis suggests that under heavy ion irradiation, leakage current at different gate biases is primarily attributed to micro-burn channels formed via thermal excitation and carrier tunneling, with their likelihood governed by the internal electric field and lattice temperature. Under the intermediate gate bias, the electric field strength and lattice temperature inside the device were both higher, resulting in more micro-burned channels and a significantly higher leakage rate than other bias conditions. These findings can provide an important theoretical basis for the single event leakage degradation characteristics during the potential application of p-GaN HEMT devices in radiation environment.
{"title":"Investigation of the Gate Bias Dependent Single Event Leakage Current in p-GaN Gate High Electron Mobility Transistors","authors":"Rongxing Cao;Yuxin Lu;Dongping Yang;Yuanyuan Xue;Chengan Wan;Xuelin Yang;Hanxun Liu;Weixiang Zhou;Dan Han;Yuxiong Xue","doi":"10.1109/TNS.2025.3601176","DOIUrl":"https://doi.org/10.1109/TNS.2025.3601176","url":null,"abstract":"This study investigates the effect of different gate biases on the leakage current of p-type GaN high electron mobility transistors (HEMTs) under heavy ion irradiation. Utilizing Ta ion irradiation, the leakage degradation at the gate bias <inline-formula> <tex-math>$V_{mathrm {gs}}$ </tex-math></inline-formula> range of 0 to −5 V was studied. The most severe degradation was observed at approximately <inline-formula> <tex-math>$V_{mathrm {gs}}=-3$ </tex-math></inline-formula> V. Electrical measurements revealed a 20% positive shift in threshold voltage (at <inline-formula> <tex-math>$V_{mathrm {gs}}=-3$ </tex-math></inline-formula> V), a two times increase in <sc>on</small>-resistance, a reduction in Schottky barrier height, and a significant shift in the ideality factor after heavy ion exposure. Technology computer-aided design (TCAD) simulations indicated that increasing the magnitude of negative gate bias enhanced the internal electric field strength, while the lattice temperature exhibited a decreasing trend. The analysis suggests that under heavy ion irradiation, leakage current at different gate biases is primarily attributed to micro-burn channels formed via thermal excitation and carrier tunneling, with their likelihood governed by the internal electric field and lattice temperature. Under the intermediate gate bias, the electric field strength and lattice temperature inside the device were both higher, resulting in more micro-burned channels and a significantly higher leakage rate than other bias conditions. These findings can provide an important theoretical basis for the single event leakage degradation characteristics during the potential application of p-GaN HEMT devices in radiation environment.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3023-3032"},"PeriodicalIF":1.9,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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