Pub Date : 2024-08-22DOI: 10.1109/tns.2024.3447772
A. Shilpa, N V L Narasimha Murty
{"title":"Alphavoltaic Performance of 4H-SiC Schottky Barrier Diodes","authors":"A. Shilpa, N V L Narasimha Murty","doi":"10.1109/tns.2024.3447772","DOIUrl":"https://doi.org/10.1109/tns.2024.3447772","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-21DOI: 10.1109/tns.2024.3446850
Xiaoping Dong, Mingmin Huang, Yao Ma, Chengwen Fu, Mu He, Zhimei Yang, Yun Li, Min Gong
{"title":"Mechanism and Physical Model of the Single-Event Leakage Current for SiC JBS Diodes","authors":"Xiaoping Dong, Mingmin Huang, Yao Ma, Chengwen Fu, Mu He, Zhimei Yang, Yun Li, Min Gong","doi":"10.1109/tns.2024.3446850","DOIUrl":"https://doi.org/10.1109/tns.2024.3446850","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-19DOI: 10.1109/tns.2024.3445502
J. Schacht, T. Brockmann, M. Marquardt, J. Recknagel, T. Schröder
{"title":"New Developments for the Trigger-Time-Event System for the W7-X Experiment","authors":"J. Schacht, T. Brockmann, M. Marquardt, J. Recknagel, T. Schröder","doi":"10.1109/tns.2024.3445502","DOIUrl":"https://doi.org/10.1109/tns.2024.3445502","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-19DOI: 10.1109/tns.2024.3446309
Marvin Fuchs, Hendrik Krause, Timo Muscheid, Lukas Scheller, Luis E. Ardila-Perez, Oliver Sander
{"title":"Cross-Chip Partial Reconfiguration for the Initialisation of Modular and Scalable Heterogeneous Systems","authors":"Marvin Fuchs, Hendrik Krause, Timo Muscheid, Lukas Scheller, Luis E. Ardila-Perez, Oliver Sander","doi":"10.1109/tns.2024.3446309","DOIUrl":"https://doi.org/10.1109/tns.2024.3446309","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, we mainly studied the proton irradiation effects on novel dual delta-doping GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The conventional heterojunction high-electron-mobility transistors (HFETs) were selected as control. The insensitivity of Co $^{60}~gamma $ -rays (up to 100 Mrad) indicates that displacement effects predominate in the degradation of threshold voltages ( $V_{mathrm {TH}}$ ) and drain current ( $I_{mathrm {DS}}$ ). Based on the incident depth of protons in device, there are two types of irradiation effects: uniform (thin target) and nonuniform (thick target). For the former, 3-, 40-, and 80-MeV protons were employed to explore the energy dependence in PHEMTs. It was found that the effect of protons on PHEMTs depends on nonionizing energy loss (NIEL), and it is possible to predict the impact of different protons on $V_{mathrm {TH}}$ by NIEL alone. As for nonuniform irradiation, the incident range of 150-keV protons in gated and ungated regions of both PHEMTs and HFETs determines the case in which $I_{mathrm {DS}}$ decreases, while $V_{mathrm {TH}}$ remains constant as the fluence increases. Finally, this novel PHEMT with a higher donor concentration (provided by double delta doping) and higher mobility (InGaAs channel) was found to have a greater radiation hardness than HFETs.
{"title":"Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors","authors":"Shuhao Hou;Shangli Dong;Jianqun Yang;Zhongli Liu;Enhao Guan;Jinhua Liu;Gang Lin;Guojian Shao;Yubao Zhang;Jicheng Jiang;Xingji Li","doi":"10.1109/TNS.2024.3445351","DOIUrl":"10.1109/TNS.2024.3445351","url":null,"abstract":"In this article, we mainly studied the proton irradiation effects on novel dual delta-doping GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The conventional heterojunction high-electron-mobility transistors (HFETs) were selected as control. The insensitivity of Co\u0000<inline-formula> <tex-math>$^{60}~gamma $ </tex-math></inline-formula>\u0000-rays (up to 100 Mrad) indicates that displacement effects predominate in the degradation of threshold voltages (\u0000<inline-formula> <tex-math>$V_{mathrm {TH}}$ </tex-math></inline-formula>\u0000) and drain current (\u0000<inline-formula> <tex-math>$I_{mathrm {DS}}$ </tex-math></inline-formula>\u0000). Based on the incident depth of protons in device, there are two types of irradiation effects: uniform (thin target) and nonuniform (thick target). For the former, 3-, 40-, and 80-MeV protons were employed to explore the energy dependence in PHEMTs. It was found that the effect of protons on PHEMTs depends on nonionizing energy loss (NIEL), and it is possible to predict the impact of different protons on \u0000<inline-formula> <tex-math>$V_{mathrm {TH}}$ </tex-math></inline-formula>\u0000 by NIEL alone. As for nonuniform irradiation, the incident range of 150-keV protons in gated and ungated regions of both PHEMTs and HFETs determines the case in which \u0000<inline-formula> <tex-math>$I_{mathrm {DS}}$ </tex-math></inline-formula>\u0000 decreases, while \u0000<inline-formula> <tex-math>$V_{mathrm {TH}}$ </tex-math></inline-formula>\u0000 remains constant as the fluence increases. Finally, this novel PHEMT with a higher donor concentration (provided by double delta doping) and higher mobility (InGaAs channel) was found to have a greater radiation hardness than HFETs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1109/TNS.2024.3437929
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3437929","DOIUrl":"https://doi.org/10.1109/TNS.2024.3437929","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638257","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1109/TNS.2024.3435108
Recounts the career and contributions of Miguel Angel Aguirre.
讲述米格尔-安赫尔-阿吉雷的职业生涯和贡献。
{"title":"In Memoriam Miguel Angel Aguirre","authors":"","doi":"10.1109/TNS.2024.3435108","DOIUrl":"https://doi.org/10.1109/TNS.2024.3435108","url":null,"abstract":"Recounts the career and contributions of Miguel Angel Aguirre.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638260","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1109/TNS.2024.3440705
{"title":"IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room Temperature Semiconductor Detector Conference","authors":"","doi":"10.1109/TNS.2024.3440705","DOIUrl":"https://doi.org/10.1109/TNS.2024.3440705","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638268","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1109/TNS.2024.3423928
Zane W. Bell
The IEEE Transactions on Nuclear Science Best Paper Award is an annual award recognizing the most significant paper published in the TRANSACTIONS in a given year. The award is sponsored by the IEEE Nuclear and Plasma Sciences Society and the winning paper is selected according to its quantifiable usefulness to the community. The authors of papers published in the TRANSACTIONS in the third year prior to the year of the award are eligible for consideration. Thus, the 2024 award is awarded to the paper published in calendar year 2021 judged to be the most useful to our community based on metrics calculated for the years 2021, 2022, and 2023.
{"title":"IEEE Transactions on Nuclear Science 2024 Best Paper Award","authors":"Zane W. Bell","doi":"10.1109/TNS.2024.3423928","DOIUrl":"https://doi.org/10.1109/TNS.2024.3423928","url":null,"abstract":"The IEEE Transactions on Nuclear Science Best Paper Award is an annual award recognizing the most significant paper published in the TRANSACTIONS in a given year. The award is sponsored by the IEEE Nuclear and Plasma Sciences Society and the winning paper is selected according to its quantifiable usefulness to the community. The authors of papers published in the TRANSACTIONS in the third year prior to the year of the award are eligible for consideration. Thus, the 2024 award is awarded to the paper published in calendar year 2021 judged to be the most useful to our community based on metrics calculated for the years 2021, 2022, and 2023.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638266","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141994003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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