Pub Date : 2025-01-13DOI: 10.1109/TNS.2025.3529188
Hao Jiang;Xiaodong Xu;Xueqiang Yu;Xiangjie Cao;Tao Ying;Jianqun Yang;Peijian Zhang;Xingji Li
In this article, a combined approach of experimentation and simulation is adopted to study the effects of radiation-induced defects on the electrical properties of GaN high-electron-mobility transistors (HEMTs) under 6-MeV chlorine ion irradiation. Through electrical performance and current deep-level transient spectroscopy (I-DLTS) testing, the evolution of defect from ${V} _{text {N}}$ –${V} _{text {N}}$ (+1/+2) and FeGa to FeGa–${V} _{text {N}}$ is observed with increasing irradiation fluence. When the fluence exceeds $5times 10^{10}$ ions/cm2, the concentration of FeGa–${V} _{text {N}}$ defects reaches saturation due to the limitation of the FeGa concentration, which is reflected in the changes to the peak ${G} _{M}$ . The FeGa–${V} _{text {N}}$ defect is confirmed as a primary factor contributing to electrical degradation in the 2-D electron gas (2DEG) conductivity of the GaN-HEMTs.
{"title":"The Impact of Radiation-Induced FeGa– VN Defects on the Electrical Performance of AlGaN/GaN HEMTs","authors":"Hao Jiang;Xiaodong Xu;Xueqiang Yu;Xiangjie Cao;Tao Ying;Jianqun Yang;Peijian Zhang;Xingji Li","doi":"10.1109/TNS.2025.3529188","DOIUrl":"https://doi.org/10.1109/TNS.2025.3529188","url":null,"abstract":"In this article, a combined approach of experimentation and simulation is adopted to study the effects of radiation-induced defects on the electrical properties of GaN high-electron-mobility transistors (HEMTs) under 6-MeV chlorine ion irradiation. Through electrical performance and current deep-level transient spectroscopy (I-DLTS) testing, the evolution of defect from <inline-formula> <tex-math>${V} _{text {N}}$ </tex-math></inline-formula>–<inline-formula> <tex-math>${V} _{text {N}}$ </tex-math></inline-formula> (+1/+2) and FeGa to FeGa–<inline-formula> <tex-math>${V} _{text {N}}$ </tex-math></inline-formula> is observed with increasing irradiation fluence. When the fluence exceeds <inline-formula> <tex-math>$5times 10^{10}$ </tex-math></inline-formula> ions/cm2, the concentration of FeGa–<inline-formula> <tex-math>${V} _{text {N}}$ </tex-math></inline-formula> defects reaches saturation due to the limitation of the FeGa concentration, which is reflected in the changes to the peak <inline-formula> <tex-math>${G} _{M}$ </tex-math></inline-formula>. The FeGa–<inline-formula> <tex-math>${V} _{text {N}}$ </tex-math></inline-formula> defect is confirmed as a primary factor contributing to electrical degradation in the 2-D electron gas (2DEG) conductivity of the GaN-HEMTs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"118-124"},"PeriodicalIF":1.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-13DOI: 10.1109/TNS.2025.3527045
Thomas G. Lucas;Jürgen Alex;Carl Beard;Alessandro Citterio;Hans-Heinrich Braun;Paolo Craievich;Zheqiao Geng;Roger Kalt;Florian Loehl;Marco Pedrozzi;Jean-Yves Raguin;Riccardo Zennaro
SwissFEL is an X-ray free-electron laser (XFEL) that has been in regular user operation since December 2017. The GeV-scale electron beam is driven by a 420-m-long linear accelerator (linac) consisting of 27 radio frequency (RF) modules. Each RF module has four C-band accelerating structures that operate at an average accelerating gradient of 30 MV/m. These accelerating structures were realized through a series production using ultrahigh-precision machining and brazing that saw the structures fabricated on-tune with a production yield rate of over 99%. After installing each of the accelerating structures into its respective RF module, the high-power conditioning began, taking between 300 and 600 million RF pulses to achieve the nominal accelerating voltage of 240 MV per RF module. During the user operation, the breakdown rate inside the RF modules began to fall as a result of RF conditioning incidental to the nominal high-power operation. This reduction in breakdown rate followed a power-law trend that saw it reducing by over three orders of magnitude during the first three years of user operation, from $10^{-6}$ to less than $10^{-9}$ breakdown per pulse per meter. A postprocessing analysis of the breakdowns’ locations found that they cluster around the input RF coupler and central regular cells of the accelerating structures. Given that this analysis consists of 100 accelerating structures, each with the same RF design and method of fabrication, this analysis represents one of the largest datasets of RF conditioning and vacuum breakdowns ever produced for a single accelerating structure design.
{"title":"Multiyear Longitudinal Analysis of Vacuum Breakdown and RF Conditioning in the C-Band Linac of SwissFEL","authors":"Thomas G. Lucas;Jürgen Alex;Carl Beard;Alessandro Citterio;Hans-Heinrich Braun;Paolo Craievich;Zheqiao Geng;Roger Kalt;Florian Loehl;Marco Pedrozzi;Jean-Yves Raguin;Riccardo Zennaro","doi":"10.1109/TNS.2025.3527045","DOIUrl":"https://doi.org/10.1109/TNS.2025.3527045","url":null,"abstract":"SwissFEL is an X-ray free-electron laser (XFEL) that has been in regular user operation since December 2017. The GeV-scale electron beam is driven by a 420-m-long linear accelerator (linac) consisting of 27 radio frequency (RF) modules. Each RF module has four C-band accelerating structures that operate at an average accelerating gradient of 30 MV/m. These accelerating structures were realized through a series production using ultrahigh-precision machining and brazing that saw the structures fabricated on-tune with a production yield rate of over 99%. After installing each of the accelerating structures into its respective RF module, the high-power conditioning began, taking between 300 and 600 million RF pulses to achieve the nominal accelerating voltage of 240 MV per RF module. During the user operation, the breakdown rate inside the RF modules began to fall as a result of RF conditioning incidental to the nominal high-power operation. This reduction in breakdown rate followed a power-law trend that saw it reducing by over three orders of magnitude during the first three years of user operation, from <inline-formula> <tex-math>$10^{-6}$ </tex-math></inline-formula> to less than <inline-formula> <tex-math>$10^{-9}$ </tex-math></inline-formula> breakdown per pulse per meter. A postprocessing analysis of the breakdowns’ locations found that they cluster around the input RF coupler and central regular cells of the accelerating structures. Given that this analysis consists of 100 accelerating structures, each with the same RF design and method of fabrication, this analysis represents one of the largest datasets of RF conditioning and vacuum breakdowns ever produced for a single accelerating structure design.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"781-794"},"PeriodicalIF":1.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-13DOI: 10.1109/TNS.2025.3528905
Daniel Durini;Gregorio Zamora-Mejia;Jose M. Rocha-Perez;Victor H. Carbajal-Gomez;Alejandro I. Bautista-Castillo;Sergio A. Rosales-Nunez;Alejandro Silva-Juarez;Luis C. Alvarez-Simon;Alejandro Diaz-Sanchez;Ruben Alfaro-Molina;Arturo Iriarte;Magdalena Gonzalez
This work describes MexSIC, a data acquisition (DAQ) channel designed for silicon photomultipliers (SiPMs), composed of a mixed-mode application-specific integrated circuit (ASIC) front end, a field programmable gate array (FPGA)-based processing stage, and a user interface. The ASIC provides a 1-bit sigma-delta modulator ($Sigma Delta -M$ ) digital equivalent of the input SiPM current, a flag indicating the start/end of the SiPM pulse, and a clock reference generated by an internal phase-locked loop (PLL). At the ASIC input stage, the SiPM current is converted to voltage by means of a 1.57-GHz bandwidth (BW) transimpedance amplifier (TIA), the gain of which can be switched between 21 and 48 dB, allowing for an input current range between $20~mu $ A and 20 mA. The generated voltage signal is then fed to a trigger unit (TU) implemented to discriminate between desired signals and the spurious ones and, in parallel, also to a second-order $Sigma Delta $ modulator providing 6.1 effective number of bits (ENOB). The TU circuit sends a start/end bit flag by comparing the SiPM voltage signal with an 8-bit programmable voltage reference. $Sigma Delta $ was selected to have a single output line instead of using a data bus with many lines, which is important in applications where the number of SiPM channels being read out is very large. The 10-MHz BW $Sigma Delta -M$ uses an oversampling ratio (OSR) of 50 and a 1-GHz sampling clock that is generated by a PLL using an off-chip 100-MHz reference. The FPGA receives the ASIC $Sigma Delta $ modulated output signal and performs a decimation process by means of a cascade integrator comb (CIC) filter to complete the data recovery. The recovered signal is visualized in a MATLAB-programmed graphical user interface (GUI). The MexSIC ASIC was designed in a 180-nm CMOS standard process using Cadence software, and the processing stage was implemented in a Kintex-7 FPGA.
{"title":"MexSIC, a Data Acquisition Channel for SiPMs","authors":"Daniel Durini;Gregorio Zamora-Mejia;Jose M. Rocha-Perez;Victor H. Carbajal-Gomez;Alejandro I. Bautista-Castillo;Sergio A. Rosales-Nunez;Alejandro Silva-Juarez;Luis C. Alvarez-Simon;Alejandro Diaz-Sanchez;Ruben Alfaro-Molina;Arturo Iriarte;Magdalena Gonzalez","doi":"10.1109/TNS.2025.3528905","DOIUrl":"https://doi.org/10.1109/TNS.2025.3528905","url":null,"abstract":"This work describes MexSIC, a data acquisition (DAQ) channel designed for silicon photomultipliers (SiPMs), composed of a mixed-mode application-specific integrated circuit (ASIC) front end, a field programmable gate array (FPGA)-based processing stage, and a user interface. The ASIC provides a 1-bit sigma-delta modulator (<inline-formula> <tex-math>$Sigma Delta -M$ </tex-math></inline-formula>) digital equivalent of the input SiPM current, a flag indicating the start/end of the SiPM pulse, and a clock reference generated by an internal phase-locked loop (PLL). At the ASIC input stage, the SiPM current is converted to voltage by means of a 1.57-GHz bandwidth (BW) transimpedance amplifier (TIA), the gain of which can be switched between 21 and 48 dB, allowing for an input current range between <inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>A and 20 mA. The generated voltage signal is then fed to a trigger unit (TU) implemented to discriminate between desired signals and the spurious ones and, in parallel, also to a second-order <inline-formula> <tex-math>$Sigma Delta $ </tex-math></inline-formula> modulator providing 6.1 effective number of bits (ENOB). The TU circuit sends a start/end bit flag by comparing the SiPM voltage signal with an 8-bit programmable voltage reference. <inline-formula> <tex-math>$Sigma Delta $ </tex-math></inline-formula> was selected to have a single output line instead of using a data bus with many lines, which is important in applications where the number of SiPM channels being read out is very large. The 10-MHz BW <inline-formula> <tex-math>$Sigma Delta -M$ </tex-math></inline-formula> uses an oversampling ratio (OSR) of 50 and a 1-GHz sampling clock that is generated by a PLL using an off-chip 100-MHz reference. The FPGA receives the ASIC <inline-formula> <tex-math>$Sigma Delta $ </tex-math></inline-formula> modulated output signal and performs a decimation process by means of a cascade integrator comb (CIC) filter to complete the data recovery. The recovered signal is visualized in a MATLAB-programmed graphical user interface (GUI). The MexSIC ASIC was designed in a 180-nm CMOS standard process using Cadence software, and the processing stage was implemented in a Kintex-7 FPGA.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"946-960"},"PeriodicalIF":1.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-09DOI: 10.1109/TNS.2025.3527445
Lei Wu;Fengkai Liu;Hao Wang;Xueqiang Yu;Yadong Wei;Xiaodong Xu;Zhongli Liu;Shangli Dong;Jianqun Yang;Xingji Li
The impact of bias voltage on the radiation effect of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) was studied using 1-MeV high-energy electrons. The results indicate that the device undergoes ionization effects during irradiation, resulting in a shift in the threshold voltage. At high fluence, the device also experiences displacement damage (DD) effects, leading to a decrease in saturation region current, linear region current, and linear region slope. Defects were characterized using deep-level transient spectroscopy (DLTS). The results demonstrate that during irradiation, the gate bias voltage promotes the formation of oxide charges. The gate bias voltage and drain bias voltage will affect the formation and evolution of defects within the bulk of the device. Through technology computer-aided design (TCAD) simulation, it was determined that deep-level defects are the primary contributors to the current decrease in the device, and oxide charges are the main cause of the threshold voltage shift. The simulation results are largely consistent with experimental findings, indicating that the presence of drain bias during irradiation enhances the DD effect. Furthermore, the presence of gate bias exacerbates both ionization damage and DD.
{"title":"Impact of Bias Condition on Electron Radiation Response of SiC MOSFETs","authors":"Lei Wu;Fengkai Liu;Hao Wang;Xueqiang Yu;Yadong Wei;Xiaodong Xu;Zhongli Liu;Shangli Dong;Jianqun Yang;Xingji Li","doi":"10.1109/TNS.2025.3527445","DOIUrl":"https://doi.org/10.1109/TNS.2025.3527445","url":null,"abstract":"The impact of bias voltage on the radiation effect of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) was studied using 1-MeV high-energy electrons. The results indicate that the device undergoes ionization effects during irradiation, resulting in a shift in the threshold voltage. At high fluence, the device also experiences displacement damage (DD) effects, leading to a decrease in saturation region current, linear region current, and linear region slope. Defects were characterized using deep-level transient spectroscopy (DLTS). The results demonstrate that during irradiation, the gate bias voltage promotes the formation of oxide charges. The gate bias voltage and drain bias voltage will affect the formation and evolution of defects within the bulk of the device. Through technology computer-aided design (TCAD) simulation, it was determined that deep-level defects are the primary contributors to the current decrease in the device, and oxide charges are the main cause of the threshold voltage shift. The simulation results are largely consistent with experimental findings, indicating that the presence of drain bias during irradiation enhances the DD effect. Furthermore, the presence of gate bias exacerbates both ionization damage and DD.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"175-183"},"PeriodicalIF":1.9,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-08DOI: 10.1109/TNS.2025.3526952
M. Nakao;Y. Nakazawa;H. Sudo;R. Honda;N. Taniguchi
The Joint Test Action Group (JTAG) protocol is a popular method to program field-programmable gate array (FPGA) devices where a more intelligent technology is not applicable. However, the original JTAG protocol is designed for a short-distance connection and is not necessarily suitable when the FPGA device is located in a remote radiation area. We developed a custom optical transmission technique for the JTAG protocol. A small receiver test board is developed based on discrete devices, and a multiport distributor is implemented on an FPGA board. We also developed a technique to overcome the latency due to serialization and cable length. We present the evaluation results and future applications.
{"title":"Multiport Remote JTAG Over Optical Fibers Under Radiation Environment","authors":"M. Nakao;Y. Nakazawa;H. Sudo;R. Honda;N. Taniguchi","doi":"10.1109/TNS.2025.3526952","DOIUrl":"https://doi.org/10.1109/TNS.2025.3526952","url":null,"abstract":"The Joint Test Action Group (JTAG) protocol is a popular method to program field-programmable gate array (FPGA) devices where a more intelligent technology is not applicable. However, the original JTAG protocol is designed for a short-distance connection and is not necessarily suitable when the FPGA device is located in a remote radiation area. We developed a custom optical transmission technique for the JTAG protocol. A small receiver test board is developed based on discrete devices, and a multiport distributor is implemented on an FPGA board. We also developed a technique to overcome the latency due to serialization and cable length. We present the evaluation results and future applications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"526-529"},"PeriodicalIF":1.9,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10833817","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-07DOI: 10.1109/TNS.2025.3526665
Jinzhe Tan;Renlong Li;Ding Ding;Zhuojun Chen
Compute-in-memory (CIM) with high parallelism and energy efficiency is an attractive solution for next-generation orbital edge computing. However, the reliability of the CIM circuits in a radiation environment is rarely studied. In this article, we present an analog CIM macro based on static random access memory (SRAM) in a 55-nm CMOS process, featuring multiply-accumulate (MAC) operations. The performance degradation including computational linearity and MAC operation accuracy is evaluated using the $gamma $ -ray irradiation experiment. The mechanism of the radiation effect of the analog CIM is revealed and a radiation-induced calculation error (RICE) model is proposed. The simulation results show that the accuracy of MAC operation decreases by about 5% after irradiation to 250 krad(Si), in good agreement with the measurement results. This article guides the design and application of SRAM-based CIM processors in the radiation environment.
{"title":"Total Ionizing Dose Effects of SRAM-Based Compute-In-Memory Macro With Analog MAC Operations","authors":"Jinzhe Tan;Renlong Li;Ding Ding;Zhuojun Chen","doi":"10.1109/TNS.2025.3526665","DOIUrl":"https://doi.org/10.1109/TNS.2025.3526665","url":null,"abstract":"Compute-in-memory (CIM) with high parallelism and energy efficiency is an attractive solution for next-generation orbital edge computing. However, the reliability of the CIM circuits in a radiation environment is rarely studied. In this article, we present an analog CIM macro based on static random access memory (SRAM) in a 55-nm CMOS process, featuring multiply-accumulate (MAC) operations. The performance degradation including computational linearity and MAC operation accuracy is evaluated using the <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray irradiation experiment. The mechanism of the radiation effect of the analog CIM is revealed and a radiation-induced calculation error (RICE) model is proposed. The simulation results show that the accuracy of MAC operation decreases by about 5% after irradiation to 250 krad(Si), in good agreement with the measurement results. This article guides the design and application of SRAM-based CIM processors in the radiation environment.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"147-153"},"PeriodicalIF":1.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-03DOI: 10.1109/TNS.2025.3525716
Haoyan Yang;Tao Xue;Qiutong Pan;Bo Liang;Yinong Liu;Jianmin Li
The direct detection of light dark matter is a prominent topic in international physics research. Weakly interacting massive particles (WIMPs) are the leading dark matter candidates. The scientific goal of the China Dark matter EXperiment (CDEX), located in the China Jinping Underground Laboratory (CJPL), is to detect light dark matter candidates using a high-purity germanium (HPGe) detector array. In 2013, CDEX-1B achieved the most sensitive experimental results for spin-independent WIMPs below $mathrm {4 GeV/}c^{2}$ , with a data collection of $783~mathrm {kgcdot day}$ . In 2018, CDEX-10 obtained the most sensitive experimental results for spin-independent WIMPs in the 4–5-$mathrm {GeV/}c^{2}$ range, using $102.8~mathrm {kgcdot day}$ of data. The CDEX-50, which is currently under construction, is expected to achieve an energy threshold of 100 eV, which poses a huge challenge to the waveform digitization system. However, the reduction of the threshold is constrained by the analog shaping system’s ability to suppress preamplifier noise. Therefore, this article studies the implementation of a CR-(RC)4 filter, a trapezoidal shaping filter, and a digital penalized least mean square (DPLMS) filter on a field programmable gate array (FPGA). The DPLMS filter consumes the most resources, followed by the CR-(RC)4, while the trapezoidal filter consumes the least amount of resources. An experimental platform based on a Broad Energy Germanium (BEGe) detector was built to compare different digital filters and analog shaping systems. The results show that the DPLMS filter is the most effective at improving the signal-to-noise ratio of the preamplifier output. Compared to the analog shaping systems used in CDEX-1B and CDEX-10, the standard deviation of the baseline noise was reduced from 216.3 to 170.0 eV. The energy corresponding to a 99% trigger efficiency was reduced from 862 to 712 eV, a decrease of about 17.4%. These results can provide a reference for upgrading the CDEX-50 waveform digitization system and further improve the sensitivity of dark matter detection.
{"title":"FPGA Implementation of Digital Filters for China Dark Matter Experiment","authors":"Haoyan Yang;Tao Xue;Qiutong Pan;Bo Liang;Yinong Liu;Jianmin Li","doi":"10.1109/TNS.2025.3525716","DOIUrl":"https://doi.org/10.1109/TNS.2025.3525716","url":null,"abstract":"The direct detection of light dark matter is a prominent topic in international physics research. Weakly interacting massive particles (WIMPs) are the leading dark matter candidates. The scientific goal of the China Dark matter EXperiment (CDEX), located in the China Jinping Underground Laboratory (CJPL), is to detect light dark matter candidates using a high-purity germanium (HPGe) detector array. In 2013, CDEX-1B achieved the most sensitive experimental results for spin-independent WIMPs below <inline-formula> <tex-math>$mathrm {4 GeV/}c^{2}$ </tex-math></inline-formula>, with a data collection of <inline-formula> <tex-math>$783~mathrm {kgcdot day}$ </tex-math></inline-formula>. In 2018, CDEX-10 obtained the most sensitive experimental results for spin-independent WIMPs in the 4–5-<inline-formula> <tex-math>$mathrm {GeV/}c^{2}$ </tex-math></inline-formula> range, using <inline-formula> <tex-math>$102.8~mathrm {kgcdot day}$ </tex-math></inline-formula> of data. The CDEX-50, which is currently under construction, is expected to achieve an energy threshold of 100 eV, which poses a huge challenge to the waveform digitization system. However, the reduction of the threshold is constrained by the analog shaping system’s ability to suppress preamplifier noise. Therefore, this article studies the implementation of a CR-(RC)4 filter, a trapezoidal shaping filter, and a digital penalized least mean square (DPLMS) filter on a field programmable gate array (FPGA). The DPLMS filter consumes the most resources, followed by the CR-(RC)4, while the trapezoidal filter consumes the least amount of resources. An experimental platform based on a Broad Energy Germanium (BEGe) detector was built to compare different digital filters and analog shaping systems. The results show that the DPLMS filter is the most effective at improving the signal-to-noise ratio of the preamplifier output. Compared to the analog shaping systems used in CDEX-1B and CDEX-10, the standard deviation of the baseline noise was reduced from 216.3 to 170.0 eV. The energy corresponding to a 99% trigger efficiency was reduced from 862 to 712 eV, a decrease of about 17.4%. These results can provide a reference for upgrading the CDEX-50 waveform digitization system and further improve the sensitivity of dark matter detection.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"189-196"},"PeriodicalIF":1.9,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-02DOI: 10.1109/TNS.2024.3524103
R. Mrabti;E. Le Clézio;A. Fournier;Y. Calzavara;G. Despaux
We have developed a 100-MHz ultrasonic transducer device to measure the interplate distance in spent fuel elements from a high-performance research reactor (HPRR). We first present the transducer structure, the experimental setup, and the signal processing. We then discuss the results of an in situ measurement performed along 50 cm of a fuel element water channel.
{"title":"Water-Channel Thickness in Research Reactor Fuel Elements Estimations Using a High-Frequency Ultrasonic Device","authors":"R. Mrabti;E. Le Clézio;A. Fournier;Y. Calzavara;G. Despaux","doi":"10.1109/TNS.2024.3524103","DOIUrl":"https://doi.org/10.1109/TNS.2024.3524103","url":null,"abstract":"We have developed a 100-MHz ultrasonic transducer device to measure the interplate distance in spent fuel elements from a high-performance research reactor (HPRR). We first present the transducer structure, the experimental setup, and the signal processing. We then discuss the results of an in situ measurement performed along 50 cm of a fuel element water channel.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"93-100"},"PeriodicalIF":1.9,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-31DOI: 10.1109/TNS.2024.3524761
Chahira Serief;Mohammed Meguenni
Performance stability of optical imaging systems during mission lifetime is a central issue for space optical Earth observation (EO) missions due to the harsh conditions in low-Earth-orbit (LEO) environments. Although they are adequately designed and protected to operate in the space environment, charge-coupled device (CCD) detectors, in particular, are subject, during their in-orbit lifetime, to many damaging effects caused by space radiation. These damages may result in the degradation of several CCD performance characteristics threatening consequently optical imaging systems’ performance and durability. Experience feedback from in-space measurements becomes very useful in identifying any degradation and measuring its effects on CCD detectors’ performance. This allows for a better understanding of what happens during a mission and enables comparisons between the in-orbit behavior and results of on-ground predictions and tests that cannot be performed under faithfully reproduced space mission conditions. The present work aims to assess the space radiation-induced impacts on CCD detectors’ performance parameters by making use of in-flight environment data and measurements made by the radiation monitor embarked onboard an EO microsatellite. The main contribution of this work is the link of the occurrence of the radiation-induced damage effects in CCD detectors with the in-orbit nature and amount of radiation the spacecraft was exposed to. The findings of this analysis are of primary importance for future space optical EO missions, as they provide a valuable experimental heritage to optimize design strategies and develop dedicated mitigation measures to ensure the proper operation of imaging instruments.
{"title":"Investigation of Space Radiation-Induced Effects on the Performance of CCD Detectors Using Radiation Monitor’s In-Flight Measurements","authors":"Chahira Serief;Mohammed Meguenni","doi":"10.1109/TNS.2024.3524761","DOIUrl":"https://doi.org/10.1109/TNS.2024.3524761","url":null,"abstract":"Performance stability of optical imaging systems during mission lifetime is a central issue for space optical Earth observation (EO) missions due to the harsh conditions in low-Earth-orbit (LEO) environments. Although they are adequately designed and protected to operate in the space environment, charge-coupled device (CCD) detectors, in particular, are subject, during their in-orbit lifetime, to many damaging effects caused by space radiation. These damages may result in the degradation of several CCD performance characteristics threatening consequently optical imaging systems’ performance and durability. Experience feedback from in-space measurements becomes very useful in identifying any degradation and measuring its effects on CCD detectors’ performance. This allows for a better understanding of what happens during a mission and enables comparisons between the in-orbit behavior and results of on-ground predictions and tests that cannot be performed under faithfully reproduced space mission conditions. The present work aims to assess the space radiation-induced impacts on CCD detectors’ performance parameters by making use of in-flight environment data and measurements made by the radiation monitor embarked onboard an EO microsatellite. The main contribution of this work is the link of the occurrence of the radiation-induced damage effects in CCD detectors with the in-orbit nature and amount of radiation the spacecraft was exposed to. The findings of this analysis are of primary importance for future space optical EO missions, as they provide a valuable experimental heritage to optimize design strategies and develop dedicated mitigation measures to ensure the proper operation of imaging instruments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"110-117"},"PeriodicalIF":1.9,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigates the dynamics of single-event upsets (SEUs) in space environments as detected by the National Space Science Center (NSSC)’s space particle radiation effect comprehensive measuring instrument (SPRECMI), which comprises linear energy transfer (LET) and proton detectors along with an SEU monitor. Positioned at an altitude of 1025 km and an inclination of 63.5°, the in-flight data reveal that inducing factors from the South Atlantic Anomaly (SAA) are predominant contributors to SEUs with 97.34% of SEUs occurring in this region despite its limited exposure time of 12.75% of the daily orbit. Our results not only underscore the dominant role of protons in influencing SEU rates but also validate the accuracy of SEU rate calculations derived from particle detection over long-term periods achieving a close agreement with a relative error (RE) of 7.01%. Nevertheless, the study finds limited daily-scale correlational dynamics between SEU rates and individual inducing factors, indicating the need for further research into optimal temporal scales for analyzing these relationships. Moreover, this study presents a systematic data processing and analysis case using comprehensive in-flight detection data and provides experimental evidence for the inducing factors of SEUs.
{"title":"Analyzing Measured Evidence for Inducing Factors of SEU From In-Flight Data of NSSC-SPRECMI on OPUS CZ-4C","authors":"Jieyi Wang;Huanxin Zhang;Xinyu Zhu;Guohong Shen;Zheng Chang;Xiaoheng Xu;Tian Yu;Xiang Zhu;Longlong Zhang;Yingqi Ma","doi":"10.1109/TNS.2024.3522366","DOIUrl":"https://doi.org/10.1109/TNS.2024.3522366","url":null,"abstract":"This study investigates the dynamics of single-event upsets (SEUs) in space environments as detected by the National Space Science Center (NSSC)’s space particle radiation effect comprehensive measuring instrument (SPRECMI), which comprises linear energy transfer (LET) and proton detectors along with an SEU monitor. Positioned at an altitude of 1025 km and an inclination of 63.5°, the in-flight data reveal that inducing factors from the South Atlantic Anomaly (SAA) are predominant contributors to SEUs with 97.34% of SEUs occurring in this region despite its limited exposure time of 12.75% of the daily orbit. Our results not only underscore the dominant role of protons in influencing SEU rates but also validate the accuracy of SEU rate calculations derived from particle detection over long-term periods achieving a close agreement with a relative error (RE) of 7.01%. Nevertheless, the study finds limited daily-scale correlational dynamics between SEU rates and individual inducing factors, indicating the need for further research into optimal temporal scales for analyzing these relationships. Moreover, this study presents a systematic data processing and analysis case using comprehensive in-flight detection data and provides experimental evidence for the inducing factors of SEUs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"101-109"},"PeriodicalIF":1.9,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143446225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：