Pub Date : 2024-07-05DOI: 10.1109/TNS.2024.3424201
Ivan Slipukhin;Andrea Coronetti;Rubén García Alía;Frédéric Saigné;Jérôme Boch;Luigi Dilillo;Ygor Q. Aguiar;Carlo Cazzaniga;Maria Kastriotou;Torran Dodd
System-level testing of electronics is an affordable method of assessment of the performance of complete electronic systems designed for applications in the radiation environment. Compared to component-level testing, system-level test offers a much smaller degree of observability about the performance of particular system elements. The information received during the irradiation of a system might be therefore not sufficient for the identification of every system under test (SUT) malfunction. As a consequence, no action might be taken to recover the system operation while certain parts of its functionality would be lost due to the radiation-induced effects. This can lead to the incorrect execution of the system-level test and improper conclusions about radiation-induced effects. The present paper demonstrates a method allowing an efficient identification of system-level failures based on the system total current consumption monitoring. The proposed technique can be easily implemented with common instrumentation and at the same time provides valuable feedback on SUT operation. The retrieved current consumption information can be used to identify system failures that may be not observable through the communication channels that are by default included in the tested setup. Furthermore, the posttest analysis can be performed on the collected data to investigate the SUT condition along the complete timeline of its irradiation. The verification of the proposed method was performed during the qualification test of a system designed for applications at the high-energy particle accelerator facility.
电子产品的系统级测试是评估为辐射环境应用而设计的完整电子系统性能的一种经济实惠的方法。与元件级测试相比，系统级测试对特定系统元件性能的可观测性要小得多。因此，系统辐照期间获得的信息可能不足以识别每个被测系统（SUT）的故障。因此，可能不会采取任何措施来恢复系统运行，而系统的某些部分功能却会因辐射引起的影响而丧失。这可能会导致系统级测试的错误执行，以及对辐射诱发效应得出不恰当的结论。本文展示了一种基于系统总电流消耗监测的系统级故障有效识别方法。所提出的技术可以通过普通仪器轻松实现，同时还能提供有关 SUT 运行情况的宝贵反馈。检索到的电流消耗信息可用于识别系统故障，这些故障可能无法通过通信通道观测到，而通信通道默认包含在测试设置中。此外，还可以对收集到的数据进行测试后分析，以调查 SUT 在整个辐照时间段内的状况。在对一个为高能粒子加速器应用而设计的系统进行鉴定测试时，对所提出的方法进行了验证。
{"title":"Enhancement of System Observability During System-Level Radiation Testing Through Total Current Consumption Monitoring","authors":"Ivan Slipukhin;Andrea Coronetti;Rubén García Alía;Frédéric Saigné;Jérôme Boch;Luigi Dilillo;Ygor Q. Aguiar;Carlo Cazzaniga;Maria Kastriotou;Torran Dodd","doi":"10.1109/TNS.2024.3424201","DOIUrl":"10.1109/TNS.2024.3424201","url":null,"abstract":"System-level testing of electronics is an affordable method of assessment of the performance of complete electronic systems designed for applications in the radiation environment. Compared to component-level testing, system-level test offers a much smaller degree of observability about the performance of particular system elements. The information received during the irradiation of a system might be therefore not sufficient for the identification of every system under test (SUT) malfunction. As a consequence, no action might be taken to recover the system operation while certain parts of its functionality would be lost due to the radiation-induced effects. This can lead to the incorrect execution of the system-level test and improper conclusions about radiation-induced effects. The present paper demonstrates a method allowing an efficient identification of system-level failures based on the system total current consumption monitoring. The proposed technique can be easily implemented with common instrumentation and at the same time provides valuable feedback on SUT operation. The retrieved current consumption information can be used to identify system failures that may be not observable through the communication channels that are by default included in the tested setup. Furthermore, the posttest analysis can be performed on the collected data to investigate the SUT condition along the complete timeline of its irradiation. The verification of the proposed method was performed during the qualification test of a system designed for applications at the high-energy particle accelerator facility.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10587020","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141569621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The time-interleaved analog-to-digital conversion (TIADC) technique provides an effective way to achieve high sampling speed. However, a critical challenge in TIADC design arises from the presence of mismatches among parallel sub-analog-to-digital converters (ADCs), which detrimentally affect system performance. In this article, we propose a machine-learning-based method to address these mismatches across a broadband of input signal frequencies. Different from conventional approaches, this method avoids complex and specific matrix operations and reduces the compensation filter order required to achieve a given reconstruction accuracy. To assess the efficacy of our proposed method, we designed a 5-Gs/s 12-bit TIADC system. Through extensive testing, the results demonstrate notable improvements in the effective number of bits (ENOBs) following real-time calibration. Specifically, for input frequencies below 500 MHz, the ENOB surpasses 9 bits, while for frequencies ranging from 500 MHz to 1.25 GHz, it exceeds 8 bits.
{"title":"Machine-Learning-Based Mismatch Calibration for Time-Interleaved ADCs","authors":"Jiajun Qin;Wentao Zhong;Yi Cao;Jiaming Li;Zhe Cao;Lei Zhao","doi":"10.1109/TNS.2024.3422277","DOIUrl":"10.1109/TNS.2024.3422277","url":null,"abstract":"The time-interleaved analog-to-digital conversion (TIADC) technique provides an effective way to achieve high sampling speed. However, a critical challenge in TIADC design arises from the presence of mismatches among parallel sub-analog-to-digital converters (ADCs), which detrimentally affect system performance. In this article, we propose a machine-learning-based method to address these mismatches across a broadband of input signal frequencies. Different from conventional approaches, this method avoids complex and specific matrix operations and reduces the compensation filter order required to achieve a given reconstruction accuracy. To assess the efficacy of our proposed method, we designed a 5-Gs/s 12-bit TIADC system. Through extensive testing, the results demonstrate notable improvements in the effective number of bits (ENOBs) following real-time calibration. Specifically, for input frequencies below 500 MHz, the ENOB surpasses 9 bits, while for frequencies ranging from 500 MHz to 1.25 GHz, it exceeds 8 bits.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1109/TNS.2024.3418293
Marta Rizzo;Michele Muschitiello;Viyas Gupta;Marc Poizat
Over the past years, the space industry has witnessed a steady increase in the amount of commercial off-the-shelf (COTS) components deployed in spacecrafts. The use of COTS components, however, requires an increased effort from quality control professionals, and specifically from radiation hardness assurance (RHA) engineers. In fact, besides being less traceable, they can also occasionally introduce unusual failure modes, caused by the association of radiation effects paired with other environmental factors, such as temperature. Moreover, the absence of Radiation Hardening By Design makes these failure modes sometimes difficult to predict and characterize. This work investigates the combined effects of total ionizing dose (TID) and temperature variations on an LT1521 low dropout (LDO) voltage regulator. Particular attention was paid to lot characterization, and general conclusions were drawn on the TID versus temperature characterization method. The LT1521 was found to be liable to a complete shutdown for TID levels higher than 20 krad(Si) and at cold enough temperatures. Finally, the likely root causes of this failure mode were identified in the circuit.
在过去的几年里，航天工业中使用的现成商用（COTS）组件数量稳步增长。然而，使用 COTS 组件需要质量控制专业人员，特别是辐射硬度保证 (RHA) 工程师付出更多努力。事实上，COTS 组件除了可追溯性较差外，还可能因辐射效应与其他环境因素（如温度）的结合而偶尔出现异常失效模式。此外，由于缺乏辐射硬化设计，这些失效模式有时难以预测和表征。本研究调查了总电离剂量 (TID) 和温度变化对 LT1521 低压差 (LDO) 稳压器的综合影响。其中特别关注了批量表征，并就 TID 与温度表征方法得出了一般性结论。研究发现，当 TID 水平高于 20 krad(Si)，且温度足够低时，LT1521 有可能完全关断。最后，在电路中找出了这种故障模式的可能根源。
{"title":"A Characterization Method for TID Versus Temperature Effects on Microelectronic Circuits","authors":"Marta Rizzo;Michele Muschitiello;Viyas Gupta;Marc Poizat","doi":"10.1109/TNS.2024.3418293","DOIUrl":"10.1109/TNS.2024.3418293","url":null,"abstract":"Over the past years, the space industry has witnessed a steady increase in the amount of commercial off-the-shelf (COTS) components deployed in spacecrafts. The use of COTS components, however, requires an increased effort from quality control professionals, and specifically from radiation hardness assurance (RHA) engineers. In fact, besides being less traceable, they can also occasionally introduce unusual failure modes, caused by the association of radiation effects paired with other environmental factors, such as temperature. Moreover, the absence of Radiation Hardening By Design makes these failure modes sometimes difficult to predict and characterize. This work investigates the combined effects of total ionizing dose (TID) and temperature variations on an LT1521 low dropout (LDO) voltage regulator. Particular attention was paid to lot characterization, and general conclusions were drawn on the TID versus temperature characterization method. The LT1521 was found to be liable to a complete shutdown for TID levels higher than 20 krad(Si) and at cold enough temperatures. Finally, the likely root causes of this failure mode were identified in the circuit.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Neutron active interrogation is a method that can be used to detect the smuggling of illicit materials, such as explosives, drugs, and special nuclear material. A pulsed fast neutron analysis (PFNA) can be used to measure the relative concentration of key constituent elements of common objects, such as C, H, O, and N, via inelastic neutron scattering. However, a frequent challenge that must be addressed is the excessive pile-up in PFNA measurements, particularly for intense sources, such as pulsed neutron generators (NGs). The pile-up can lead to a reduction in the number of detected events and an overestimation of deposited energy in an event, leading to a loss of energy resolution. We propose and experimentally demonstrate a method for pile-up correction in PFNA that makes use of time gating to select the gamma-ray detection events coincident with NG pulses. The number of pile-up gamma events and their times of arrival (ToA) are estimated by modified phase-only correlation (MPOC), whereas the amplitudes of individual pulses are estimated by maximum likelihood estimation (MLE). In experiments, carbon and sugar samples were activated using a deuterium-tritium NG, and gamma rays were detected with NaI(Tl) and BGO detectors. The peak-to-background ratio (PBR) for the 4.44-MeV photopeak, which corresponds to the inelastic signature of carbon, increases by a factor of 3.88 for NaI(Tl) and 2.63 for BGO, when prompt time-gated. When comparing the pile-up corrected spectrum with the conventional charge integral spectrum in a measurement of graphite, in the region of the 4.44-MeV peak, the net counts increase by the factors of 2.42 and 1.44 for NaI(Tl) and BGO, respectively, along with an improvement in energy resolution. This approach enables the use of slower scintillators, such as NaI(Tl) and BGO, in high-count-rate scenarios, such as in a typical PFNA environment. This can, in turn, reduce the cost of the PFNA system or allow for measurements in conditions of high neutron flux, thereby increasing the inspection throughput.
{"title":"Pile-Up Correction for Inelastic Gamma-Ray Detection in Pulsed Fast Neutron Analysis","authors":"Junwoo Bae;Colton Graham;Shaun Clarke;Sara Pozzi;Igor Jovanovic","doi":"10.1109/TNS.2024.3419793","DOIUrl":"10.1109/TNS.2024.3419793","url":null,"abstract":"Neutron active interrogation is a method that can be used to detect the smuggling of illicit materials, such as explosives, drugs, and special nuclear material. A pulsed fast neutron analysis (PFNA) can be used to measure the relative concentration of key constituent elements of common objects, such as C, H, O, and N, via inelastic neutron scattering. However, a frequent challenge that must be addressed is the excessive pile-up in PFNA measurements, particularly for intense sources, such as pulsed neutron generators (NGs). The pile-up can lead to a reduction in the number of detected events and an overestimation of deposited energy in an event, leading to a loss of energy resolution. We propose and experimentally demonstrate a method for pile-up correction in PFNA that makes use of time gating to select the gamma-ray detection events coincident with NG pulses. The number of pile-up gamma events and their times of arrival (ToA) are estimated by modified phase-only correlation (MPOC), whereas the amplitudes of individual pulses are estimated by maximum likelihood estimation (MLE). In experiments, carbon and sugar samples were activated using a deuterium-tritium NG, and gamma rays were detected with NaI(Tl) and BGO detectors. The peak-to-background ratio (PBR) for the 4.44-MeV photopeak, which corresponds to the inelastic signature of carbon, increases by a factor of 3.88 for NaI(Tl) and 2.63 for BGO, when prompt time-gated. When comparing the pile-up corrected spectrum with the conventional charge integral spectrum in a measurement of graphite, in the region of the 4.44-MeV peak, the net counts increase by the factors of 2.42 and 1.44 for NaI(Tl) and BGO, respectively, along with an improvement in energy resolution. This approach enables the use of slower scintillators, such as NaI(Tl) and BGO, in high-count-rate scenarios, such as in a typical PFNA environment. This can, in turn, reduce the cost of the PFNA system or allow for measurements in conditions of high neutron flux, thereby increasing the inspection throughput.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-21DOI: 10.1109/TNS.2024.3413602
Marco Benfante;Jean-Luc Reverchon;Clémentine Durnez;Cédric Virmontois;Stéphane Demiguel;Vincent Goiffon
In this work, we study the dark current random telegraph signal (DC-RTS) on 14.4-MeV proton-irradiated InGaAs single photodiodes. The analyzed diodes showed a two-level DC-RTS. DC-RTS amplitudes and lifetimes of the level “high” and level “low” are thermally activated. Moreover, a reverse bias dependence of the lifetimes of the levels has been observed.
{"title":"Dark Current Random Telegraph Signal in Proton-Irradiated Single InGaAs Photodiodes","authors":"Marco Benfante;Jean-Luc Reverchon;Clémentine Durnez;Cédric Virmontois;Stéphane Demiguel;Vincent Goiffon","doi":"10.1109/TNS.2024.3413602","DOIUrl":"10.1109/TNS.2024.3413602","url":null,"abstract":"In this work, we study the dark current random telegraph signal (DC-RTS) on 14.4-MeV proton-irradiated InGaAs single photodiodes. The analyzed diodes showed a two-level DC-RTS. DC-RTS amplitudes and lifetimes of the level “high” and level “low” are thermally activated. Moreover, a reverse bias dependence of the lifetimes of the levels has been observed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-20DOI: 10.1109/TNS.2024.3416540
Carlo Cazzaniga;Nahid Bhuiyan;Maria Kastriotou;Davide Chiesa;Steven Lilley;Christopher D. Frost
The ChipIr beamline at the Rutherford Appleton Laboratory (U.K.) is an atmospheric-like neutron facility for Single Event Effect testing in Europe. ChipIr’s design allows the extraction of fast neutrons from a target station of a spallation source, using an 800 MeV proton beam on tungsten target. The facility’s architecture includes a set of filters and collimators, allowing a range of possible configurations and capabilities. A primary measurement method using activation foils identifies the neutron flux and broad energy spectrum. Silicon detectors are used as an active method that allows for the measurement of beam profiles. Results demonstrated that ChipIr provides a neutron spectrum that closely mimics the atmospheric neutron environment, confirming its significance for industry testing in safety-critical electronics.
{"title":"Fast Neutron Measurements for the Characterization of the ChipIr Beamline","authors":"Carlo Cazzaniga;Nahid Bhuiyan;Maria Kastriotou;Davide Chiesa;Steven Lilley;Christopher D. Frost","doi":"10.1109/TNS.2024.3416540","DOIUrl":"10.1109/TNS.2024.3416540","url":null,"abstract":"The ChipIr beamline at the Rutherford Appleton Laboratory (U.K.) is an atmospheric-like neutron facility for Single Event Effect testing in Europe. ChipIr’s design allows the extraction of fast neutrons from a target station of a spallation source, using an 800 MeV proton beam on tungsten target. The facility’s architecture includes a set of filters and collimators, allowing a range of possible configurations and capabilities. A primary measurement method using activation foils identifies the neutron flux and broad energy spectrum. Silicon detectors are used as an active method that allows for the measurement of beam profiles. Results demonstrated that ChipIr provides a neutron spectrum that closely mimics the atmospheric neutron environment, confirming its significance for industry testing in safety-critical electronics.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-18DOI: 10.1109/TNS.2024.3411328
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3411328","DOIUrl":"https://doi.org/10.1109/TNS.2024.3411328","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10562055","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141422597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-17DOI: 10.1109/TNS.2024.3415502
Brett L. Ringel;Jeffrey W. Teng;Mozhgan Hosseinzadeh;Delwyn G. Sam;Peter J. Francis;Hari Parameswaran;Arielle Little;George N. Tzintzarov;Daniele M. Monahan;Stephen D. LaLumondiere;John D. Cressler
The total-ionizing-dose (TID) responses of silicon and low-loss silicon-nitride (SiN) integrated waveguides are evaluated. Mach-Zehnder interferometers (MZIs), which allow for both TID-induced changes in effective refractive index ( $n_{mathrm { eff}}$ ) and transmission losses to be observed, were exposed to 10-keV highly localized X-ray pulses facilitating very high dose irradiation for small exposure areas. TID-induced shifts in $n_{mathrm { eff}}$ and transmission losses were observed for both waveguide types above 3 Mrad(Si), with the silicon waveguides exhibiting better radiation resilience for both metrics. Data collected were used to create Ansys Lumerical simulations to propose potential mechanisms of TID-induced degradation in waveguides. Furthermore, to better understand the effects of $n_{mathrm { eff}}$ degradation on other passive components, both silicon and SiN TID-damaged ring resonators were simulated in MATLAB. Differences in $n_{mathrm { eff}}$ changes and transmission losses imply that for high dose environments (>10 Mrad(Si)), when comparing waveguide types, silicon waveguides will provide similar loss performance and comparably smaller shifts in $n_{mathrm { eff}}$ compared to typically lower-loss SiN waveguides.
评估了硅和低损耗氮化硅（SiN）集成波导的全电离剂量（TID）响应。马赫-泽恩德干涉仪（MZIs）可观察到 TID 引起的有效折射率（$n_{mathrm { eff}}$ ）变化和传输损耗，该干涉仪暴露在 10-keV 高局域 X 射线脉冲下，有利于在小照射区域内进行高剂量照射。在 3 Mrad(Si)以上的两种波导中都观察到了 TID 引起的 $n_{mathrm { eff}}$ 和传输损耗的变化，硅波导在这两个指标上都表现出了更好的抗辐射能力。收集到的数据被用于创建 Ansys Lumerical 仿真，以提出 TID 引起波导退化的潜在机制。此外，为了更好地了解 $n_{mathrm { eff}}$ 退化对其他无源元件的影响，在 MATLAB 中模拟了硅和氮化硅 TID 损坏环形谐振器。$n_{mathrm { eff}}$ 变化和传输损耗的差异意味着，对于高剂量环境（>10 Mrad(Si)），在比较波导类型时，硅波导将提供类似的损耗性能，与典型的低损耗氮化硅波导相比，$n_{mathrm { eff}}$ 的变化要小得多。
{"title":"A Comparison of Total-Ionizing-Dose Effects in Silicon and Silicon-Nitride Waveguides","authors":"Brett L. Ringel;Jeffrey W. Teng;Mozhgan Hosseinzadeh;Delwyn G. Sam;Peter J. Francis;Hari Parameswaran;Arielle Little;George N. Tzintzarov;Daniele M. Monahan;Stephen D. LaLumondiere;John D. Cressler","doi":"10.1109/TNS.2024.3415502","DOIUrl":"10.1109/TNS.2024.3415502","url":null,"abstract":"The total-ionizing-dose (TID) responses of silicon and low-loss silicon-nitride (SiN) integrated waveguides are evaluated. Mach-Zehnder interferometers (MZIs), which allow for both TID-induced changes in effective refractive index (\u0000<inline-formula> <tex-math>$n_{mathrm { eff}}$ </tex-math></inline-formula>\u0000) and transmission losses to be observed, were exposed to 10-keV highly localized X-ray pulses facilitating very high dose irradiation for small exposure areas. TID-induced shifts in \u0000<inline-formula> <tex-math>$n_{mathrm { eff}}$ </tex-math></inline-formula>\u0000 and transmission losses were observed for both waveguide types above 3 Mrad(Si), with the silicon waveguides exhibiting better radiation resilience for both metrics. Data collected were used to create Ansys Lumerical simulations to propose potential mechanisms of TID-induced degradation in waveguides. Furthermore, to better understand the effects of \u0000<inline-formula> <tex-math>$n_{mathrm { eff}}$ </tex-math></inline-formula>\u0000 degradation on other passive components, both silicon and SiN TID-damaged ring resonators were simulated in MATLAB. Differences in \u0000<inline-formula> <tex-math>$n_{mathrm { eff}}$ </tex-math></inline-formula>\u0000 changes and transmission losses imply that for high dose environments (>10 Mrad(Si)), when comparing waveguide types, silicon waveguides will provide similar loss performance and comparably smaller shifts in \u0000<inline-formula> <tex-math>$n_{mathrm { eff}}$ </tex-math></inline-formula>\u0000 compared to typically lower-loss SiN waveguides.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141941164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article presents detailed measurements of a novel radiation effect caused by the sensitivity of on-chip spiral inductors to ionizing particles, leading to single-event frequency transients (SEFTs) in LC -tank oscillators. Quantitative experimental results from heavy-ion microbeam irradiation of two-turn and four-turn inductor samples are presented. The findings reveal a homogeneous sensitivity pattern within the perimeter of the inductor coil, with sensitivity decreasing further away from the coil. Moreover, the results demonstrate an increase in sensitivity with frequency. The circuits were fabricated using a 65-nm complementary metal—oxide semiconductor (CMOS) technology.
{"title":"Single-Event Effect Responses of CMOS Integrated Planar Multiturn Inductors in LC-Tank Oscillators Under Heavy-Ion Microbeam Irradiation","authors":"Gideon Adom-Bamfi;Stefan Biereigel;Paul Leroux;Jeffrey Prinzie","doi":"10.1109/TNS.2024.3414841","DOIUrl":"https://doi.org/10.1109/TNS.2024.3414841","url":null,"abstract":"This article presents detailed measurements of a novel radiation effect caused by the sensitivity of on-chip spiral inductors to ionizing particles, leading to single-event frequency transients (SEFTs) in \u0000<italic>LC</i>\u0000-tank oscillators. Quantitative experimental results from heavy-ion microbeam irradiation of two-turn and four-turn inductor samples are presented. The findings reveal a homogeneous sensitivity pattern within the perimeter of the inductor coil, with sensitivity decreasing further away from the coil. Moreover, the results demonstrate an increase in sensitivity with frequency. The circuits were fabricated using a 65-nm complementary metal—oxide semiconductor (CMOS) technology.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141725523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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