Pub Date : 2025-06-18DOI: 10.1109/TNS.2025.3580760
Jiachen Sun;Hong Zou;Yuguang Ye;Jiali Chen
Cross calibration of energetic electron flux measurements from different satellites is essential for understanding the dynamics of the Earth’s radiation belts and for modeling the space radiation environment. In this article, we calibrate and analyze the energetic electron data measured by three Chinese medium Earth orbit (MEO) satellites (M17, M18, and M19) and two global positioning system (GPS) satellites (ns70 and ns71). Strong correlations and consistencies were found between the MEO satellites and GPS satellites using L and magnetic local time (MLT) as binning standards. We show that the measurements from the detectors onboard these satellites are basically the same with a maximum difference of 22% on a logarithmic scale. Finally, a simple calibration based on phase space density (PSD) improves the correlations and consistencies between MEO satellites and GPS, reducing the maximum difference to 2% on a logarithmic scale. It also showed that these satellites are very close to the precise Van Allen probes (VAPs) since GPS had been calibrated by them in a previous study. This will help to fill the significant data gap in MEO and provide crucial insights into particle dynamic variations within the core region (L ~ 5) of radiation belts. It is expected that the availability of data from non-scientific satellites will increase, providing a more comprehensive set of multipoint measurements for scientific research.
{"title":"On-Orbit Cross Calibration of Energetic Electron Flux Measurements From Three Chinese Satellites and GPS ns70 and ns71","authors":"Jiachen Sun;Hong Zou;Yuguang Ye;Jiali Chen","doi":"10.1109/TNS.2025.3580760","DOIUrl":"https://doi.org/10.1109/TNS.2025.3580760","url":null,"abstract":"Cross calibration of energetic electron flux measurements from different satellites is essential for understanding the dynamics of the Earth’s radiation belts and for modeling the space radiation environment. In this article, we calibrate and analyze the energetic electron data measured by three Chinese medium Earth orbit (MEO) satellites (M17, M18, and M19) and two global positioning system (GPS) satellites (ns70 and ns71). Strong correlations and consistencies were found between the MEO satellites and GPS satellites using L and magnetic local time (MLT) as binning standards. We show that the measurements from the detectors onboard these satellites are basically the same with a maximum difference of 22% on a logarithmic scale. Finally, a simple calibration based on phase space density (PSD) improves the correlations and consistencies between MEO satellites and GPS, reducing the maximum difference to 2% on a logarithmic scale. It also showed that these satellites are very close to the precise Van Allen probes (VAPs) since GPS had been calibrated by them in a previous study. This will help to fill the significant data gap in MEO and provide crucial insights into particle dynamic variations within the core region (L ~ 5) of radiation belts. It is expected that the availability of data from non-scientific satellites will increase, providing a more comprehensive set of multipoint measurements for scientific research.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2163-2172"},"PeriodicalIF":1.9,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-18DOI: 10.1109/TNS.2025.3578222
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2025.3578222","DOIUrl":"https://doi.org/10.1109/TNS.2025.3578222","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11039754","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The 4H-silicon carbide (SiC) detector has been widely used for detecting charged particles in a strong radiation environment due to its resistance to radiation. The $Delta $ E-E measurement is an important method for particle identification, especially for identifying the atomic number of heavy-ions. However, the existing epitaxial SiC detector has a thick substrate, typically larger than $100~mu $ m. This dead layer limits the application of SiC in the $Delta $ E-E telescope. In this work, the 4H-SiC substrate was completely removed using the picosecond laser etching process. Benefiting from the stepwise power modulation strategy, the thin films can be free-standing to complete the subsequent processes. Two substrate-free detectors with thicknesses of ~17 and $90~mu $ m were assembled into a $Delta $ E-E telescope. It exhibits a good detection performance. The energy resolution is about 2.1% for 241Am-239Pu-244Cm $alpha $ source. Besides, it has been successfully used in a proton scattering experiment performed at the China Institute of Atomic Energy (CIAE). This work provides a route to fabricate substrate-free 4H-SiC telescopes for detecting low-energy charged-particles.
4h型碳化硅（SiC）探测器由于其抗辐射性能，已广泛应用于强辐射环境下的带电粒子探测。$Delta $ E-E测量是粒子识别，特别是重离子原子序数识别的重要方法。然而，现有的外延SiC探测器具有较厚的衬底，通常大于$100~mu $ m，这一死层限制了SiC在$Delta $ E-E望远镜中的应用。在这项工作中，使用皮秒激光刻蚀工艺完全去除4H-SiC衬底。得益于逐步功率调制策略，薄膜可以独立完成后续工艺。两个厚度分别为17和$90~mu $ m的无衬底探测器组装成一个$Delta $ E-E望远镜。它具有良好的检测性能。能量分辨率约为2.1% for 241Am-239Pu-244Cm $alpha $ source. Besides, it has been successfully used in a proton scattering experiment performed at the China Institute of Atomic Energy (CIAE). This work provides a route to fabricate substrate-free 4H-SiC telescopes for detecting low-energy charged-particles.
{"title":"SiC ΔE-E Telescope Based on Free-Standing Epitaxial Film Fabricated by Laser Processing","authors":"Zhongyuan Han;Chengjian Lin;Nanru Ma;Jialu Li;Tianpeng Luo;Chang Chang;Zishi Wang;Cheng Yin;Huiming Jia;Hongyun Wang;Wenyi Shao;Guangpeng An;Hong Yin;Hongwei Liang","doi":"10.1109/TNS.2025.3579808","DOIUrl":"https://doi.org/10.1109/TNS.2025.3579808","url":null,"abstract":"The 4H-silicon carbide (SiC) detector has been widely used for detecting charged particles in a strong radiation environment due to its resistance to radiation. The <inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>E-E measurement is an important method for particle identification, especially for identifying the atomic number of heavy-ions. However, the existing epitaxial SiC detector has a thick substrate, typically larger than <inline-formula> <tex-math>$100~mu $ </tex-math></inline-formula>m. This dead layer limits the application of SiC in the <inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>E-E telescope. In this work, the 4H-SiC substrate was completely removed using the picosecond laser etching process. Benefiting from the stepwise power modulation strategy, the thin films can be free-standing to complete the subsequent processes. Two substrate-free detectors with thicknesses of ~17 and <inline-formula> <tex-math>$90~mu $ </tex-math></inline-formula>m were assembled into a <inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>E-E telescope. It exhibits a good detection performance. The energy resolution is about 2.1% for 241Am-239Pu-244Cm <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula> source. Besides, it has been successfully used in a proton scattering experiment performed at the China Institute of Atomic Energy (CIAE). This work provides a route to fabricate substrate-free 4H-SiC telescopes for detecting low-energy charged-particles.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3088-3093"},"PeriodicalIF":1.9,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-16DOI: 10.1109/TNS.2025.3580284
V. Anand;P. Krause;B. Bansal;G. Bizarri;G. Anil Kumar;V. Ranga;Varun Sharma
The concept of a heterostructure-based scintillation detector has been proposed as a potential alternative to current time-of-flight positron emission tomography (TOF-PET) detectors. In a heterostructure design, a dense scintillator (matrix) works in synergy with a fast-timing light scintillator (filler). The design often includes complex geometries, necessitating precise machining. The application of 3D printing technology can facilitate the fabrication of such complex geometries. This study presents the formulation and fabrication of a 3D-printed plastic scintillator, which has been identified as a potential filler material. The developed scintillator shows better rise and decay times compared to commercial plastic scintillators such as EJ-200. We have measured a coincidence time resolution (CTR) of 225 ps using $gamma - gamma $ coincidence. Monte-Carlo simulations were performed using the Geant4 toolkit to validate the advantages of using complex filler material designs. The simulation outcomes demonstrate significant improvement in the performance of heterostructures in the case of complex designs over simpler ones. The findings of this study underscore the promise of using 3D printing technology for producing complex heterostructures. This can help in advancing the development of TOF-PET detectors with comparatively reduced effort.
{"title":"3D-Printed Plastic Scintillator: A Potential Avenue for Hetero-Structured Radiation Detectors","authors":"V. Anand;P. Krause;B. Bansal;G. Bizarri;G. Anil Kumar;V. Ranga;Varun Sharma","doi":"10.1109/TNS.2025.3580284","DOIUrl":"https://doi.org/10.1109/TNS.2025.3580284","url":null,"abstract":"The concept of a heterostructure-based scintillation detector has been proposed as a potential alternative to current time-of-flight positron emission tomography (TOF-PET) detectors. In a heterostructure design, a dense scintillator (matrix) works in synergy with a fast-timing light scintillator (filler). The design often includes complex geometries, necessitating precise machining. The application of 3D printing technology can facilitate the fabrication of such complex geometries. This study presents the formulation and fabrication of a 3D-printed plastic scintillator, which has been identified as a potential filler material. The developed scintillator shows better rise and decay times compared to commercial plastic scintillators such as EJ-200. We have measured a coincidence time resolution (CTR) of 225 ps using <inline-formula> <tex-math>$gamma - gamma $ </tex-math></inline-formula> coincidence. Monte-Carlo simulations were performed using the Geant4 toolkit to validate the advantages of using complex filler material designs. The simulation outcomes demonstrate significant improvement in the performance of heterostructures in the case of complex designs over simpler ones. The findings of this study underscore the promise of using 3D printing technology for producing complex heterostructures. This can help in advancing the development of TOF-PET detectors with comparatively reduced effort.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2100-2105"},"PeriodicalIF":1.9,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The synergistic effects of the total ionizing dose (TID) on sensitivity to a single event transient (SET) of the silicon-germanium heterojunction bipolar transistors (SiGe HBTs) are investigated in a series of irradiation tests. SiGe HBTs with different biases are exposed to 60Co $gamma $ -rays up to 1 Mrad(Si). The single-event effect (SEE) transient currents observed with heavy ions at different biases are compared before and after 60Co exposures. Collector transient currents seen during SEE tests are smaller for bias voltages $V_{!text {C}} = +2$ V and $V_{!text {C}} =+3$ V in the $gamma $ -ray exposed devices. Reduction levels vary among samples with different bias values used in TID irradiations. Trap charges induced by the TID exposure can affect recombination processes and influence SEE observables seen during irradiations.
{"title":"Effects of the Total Ionizing Dose on the Single Event Transient Sensitivity of SiGe HBT Exposed to Heavy-Ion Beam","authors":"Jinxin Zhang;Xin Wang;Hongxia Guo;Wojciech Hajdas;Yunyi Yan;Juan Feng;Hui Wang;Xianxiang Wu","doi":"10.1109/TNS.2025.3579400","DOIUrl":"https://doi.org/10.1109/TNS.2025.3579400","url":null,"abstract":"The synergistic effects of the total ionizing dose (TID) on sensitivity to a single event transient (SET) of the silicon-germanium heterojunction bipolar transistors (SiGe HBTs) are investigated in a series of irradiation tests. SiGe HBTs with different biases are exposed to 60Co <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-rays up to 1 Mrad(Si). The single-event effect (SEE) transient currents observed with heavy ions at different biases are compared before and after 60Co exposures. Collector transient currents seen during SEE tests are smaller for bias voltages <inline-formula> <tex-math>$V_{!text {C}} = +2$ </tex-math></inline-formula> V and <inline-formula> <tex-math>$V_{!text {C}} =+3$ </tex-math></inline-formula> V in the <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray exposed devices. Reduction levels vary among samples with different bias values used in TID irradiations. Trap charges induced by the TID exposure can affect recombination processes and influence SEE observables seen during irradiations.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2799-2807"},"PeriodicalIF":1.9,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-12DOI: 10.1109/TNS.2025.3579045
Thomas F. Bechteler;Alexander Altmann;Jonas P. Reiffers;Peter Lechner;Carlo Fiorini
For X-ray imaging and photon detection, silicon drift detectors (SDDs) with several cells on a single chip and associated application-specific integrated circuits (ASICs) with multi-channel readout are widely used. This work presents a reset management circuit for a parallelized readout system for multi-cell SDDs. The readout system under investigation consists of a 19-cell SDD chip and three ASICs with reset capabilities. Yet, another reset management circuit is required, which handles the seamless reset operation between all ASICs and the SDD chip. With regard to its versatility and real-time capability, a field programmable gate array (FPGA) is used to implement the reset management circuit. For the design and implementation of this circuit, the time delays of all involved signal paths are investigated in detail. Measurements prove the functionality of the presented reset management. Furthermore, it is also shown how the reset management influences the dead time of the entire system. Although this work covers a system with three ASICs, the reset management is applicable for other SDD systems using two or more parallelized readout circuits.
{"title":"FPGA-Based Reset Management for Multiple Parallelized Readout ASICs Connected to a Multi-Cell SDD","authors":"Thomas F. Bechteler;Alexander Altmann;Jonas P. Reiffers;Peter Lechner;Carlo Fiorini","doi":"10.1109/TNS.2025.3579045","DOIUrl":"https://doi.org/10.1109/TNS.2025.3579045","url":null,"abstract":"For X-ray imaging and photon detection, silicon drift detectors (SDDs) with several cells on a single chip and associated application-specific integrated circuits (ASICs) with multi-channel readout are widely used. This work presents a reset management circuit for a parallelized readout system for multi-cell SDDs. The readout system under investigation consists of a 19-cell SDD chip and three ASICs with reset capabilities. Yet, another reset management circuit is required, which handles the seamless reset operation between all ASICs and the SDD chip. With regard to its versatility and real-time capability, a field programmable gate array (FPGA) is used to implement the reset management circuit. For the design and implementation of this circuit, the time delays of all involved signal paths are investigated in detail. Measurements prove the functionality of the presented reset management. Furthermore, it is also shown how the reset management influences the dead time of the entire system. Although this work covers a system with three ASICs, the reset management is applicable for other SDD systems using two or more parallelized readout circuits.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2934-2947"},"PeriodicalIF":1.9,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-11DOI: 10.1109/TNS.2025.3578674
Tianqi Hu;Guan Ming Wong;Chavdar Dutsov;Siew Yan Hoh;Kim Siang Khaw;Diego Alejandro Sanz Becerra;Philipp Schmidt-Wellenburg;Yuzhi Shang;Yusuke Takeuchi
This article outlines the design and development of a fast front-end electronic readout board for the muon trigger detector in the muEDM experiment at the Paul Scherrer Institute (PSI). The trigger detector, which consists of a gate and aperture detector, is strategically located at the end of the superconducting injection channel to generate trigger signals for a magnetic kicker, which activates upon the injection of muons into the central region of the storage solenoid. Within the magnetic field of the solenoid, the system configuration is optimized to meet stringent performance specifications, including minimal signal propagation delays, high detection efficiency, non-magnetic properties, and consistent operational stability under varying experimental conditions. In addition, the design incorporates robust methods for rejecting positron contamination in the muon beamline. The results presented include performance evaluations from both bench testing and actual beam tests, highlighting the effectiveness and reliability of the electronic design.
{"title":"Development of Fast Front-End Electronics for the Muon Trigger Detector in the PSI muEDM Experiment","authors":"Tianqi Hu;Guan Ming Wong;Chavdar Dutsov;Siew Yan Hoh;Kim Siang Khaw;Diego Alejandro Sanz Becerra;Philipp Schmidt-Wellenburg;Yuzhi Shang;Yusuke Takeuchi","doi":"10.1109/TNS.2025.3578674","DOIUrl":"https://doi.org/10.1109/TNS.2025.3578674","url":null,"abstract":"This article outlines the design and development of a fast front-end electronic readout board for the muon trigger detector in the muEDM experiment at the Paul Scherrer Institute (PSI). The trigger detector, which consists of a gate and aperture detector, is strategically located at the end of the superconducting injection channel to generate trigger signals for a magnetic kicker, which activates upon the injection of muons into the central region of the storage solenoid. Within the magnetic field of the solenoid, the system configuration is optimized to meet stringent performance specifications, including minimal signal propagation delays, high detection efficiency, non-magnetic properties, and consistent operational stability under varying experimental conditions. In addition, the design incorporates robust methods for rejecting positron contamination in the muon beamline. The results presented include performance evaluations from both bench testing and actual beam tests, highlighting the effectiveness and reliability of the electronic design.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2229-2237"},"PeriodicalIF":1.9,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-10DOI: 10.1109/TNS.2025.3578355
Bin Zhang;Tao Ying;Weiqi Li;Xiaodong Xu;Jianqun Yang;Xingji Li
In this article, we utilized molecular dynamics (MD) simulation techniques to study the cascade collision process of the primary knock-on atom (PKA) in silicon (Si), with incident energy ranging from 0.1 to 20 keV. Based on the electron–phonon MD (EPH) model, we investigated the influence of electronic stopping power on defect evolution. The research results indicate that the presence of electron stopping may not only inhibit the formation of defects, leading to a reduction in the number of defects induced by low-energy particles, but also hinder the recombination process of defects, increasing the number of stable defects after high-energy particle irradiation of materials. Based on the Norgett, Robinson, and Torrens (NRT) model and MD simulations, we applied a correction to the effective non-ionizing energy loss (NIEL) model by introducing the athermal recombination corrected (ARC) model. By controlling the physical processes of electron stopping, we have discussed the role of electron stopping in effective NIEL. The numerical calculation results show that our model exhibits a high degree of similarity in trends with traditional analytical methods. In the case of particle incidence at the kiloelectronvolt level, the effect of electron stopping on the calculation of NIEL is particularly significant. Furthermore, we have also found that a higher displacement threshold parameter setting can increase the magnitude of the NIEL values.
在本文中，我们利用分子动力学（MD）模拟技术研究了入射能量在0.1 ~ 20kev范围内的初级撞击原子（PKA）在硅（Si）中的级联碰撞过程。基于电子-声子MD （EPH）模型，研究了电子停止功率对缺陷演化的影响。研究结果表明，电子停止的存在不仅可以抑制缺陷的形成，导致低能粒子诱导缺陷的数量减少，而且可以阻碍缺陷的重组过程，增加材料在高能粒子辐照后稳定缺陷的数量。基于Norgett， Robinson, and Torrens （NRT）模型和MD模拟，我们引入了非热复合校正（ARC）模型，对有效非电离能量损失（NIEL）模型进行了修正。通过控制电子停止的物理过程，讨论了电子停止在有效NIEL中的作用。数值计算结果表明，该模型与传统的分析方法在趋势上具有高度的相似性。在粒子入射于千电子伏水平的情况下，电子停止对NIEL计算的影响尤为显著。此外，我们还发现，较高的位移阈值参数设置可以增加NIEL值的大小。
{"title":"The Influence of Electronic Stopping on Displacement Damage and the Correction of Effective NIEL Model","authors":"Bin Zhang;Tao Ying;Weiqi Li;Xiaodong Xu;Jianqun Yang;Xingji Li","doi":"10.1109/TNS.2025.3578355","DOIUrl":"https://doi.org/10.1109/TNS.2025.3578355","url":null,"abstract":"In this article, we utilized molecular dynamics (MD) simulation techniques to study the cascade collision process of the primary knock-on atom (PKA) in silicon (Si), with incident energy ranging from 0.1 to 20 keV. Based on the electron–phonon MD (EPH) model, we investigated the influence of electronic stopping power on defect evolution. The research results indicate that the presence of electron stopping may not only inhibit the formation of defects, leading to a reduction in the number of defects induced by low-energy particles, but also hinder the recombination process of defects, increasing the number of stable defects after high-energy particle irradiation of materials. Based on the Norgett, Robinson, and Torrens (NRT) model and MD simulations, we applied a correction to the effective non-ionizing energy loss (NIEL) model by introducing the athermal recombination corrected (ARC) model. By controlling the physical processes of electron stopping, we have discussed the role of electron stopping in effective NIEL. The numerical calculation results show that our model exhibits a high degree of similarity in trends with traditional analytical methods. In the case of particle incidence at the kiloelectronvolt level, the effect of electron stopping on the calculation of NIEL is particularly significant. Furthermore, we have also found that a higher displacement threshold parameter setting can increase the magnitude of the NIEL values.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2130-2136"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The broad spectrum of functionalities offered by complex digital components built around CPU cores makes them essential for onboard computers (OBCs) or instrument controller units (ICUs). In order to obtain a quick but accurate first assessment of their fault tolerance in radiative environments, both development and test teams must use a set of representative programs, before the actual application software is available. In this context, we propose a methodology based on high level software profiling metrics only, without any details on the actual CPU microarchitecture, to early assess fault tolerance of complex digital components. A derating factor equation only based on profiling metrics is calibrated with available fault tolerance data for a set of programs. This derating factor is then applied to the static cross section of the target device. The approach has been applied to a set of benchmarks running on a RISC-V softcore. Early predictions obtained from this methodology are compared to real measures collected during neutron irradiation tests. Results show that all the evaluations are within the margins of error of the experiment. The impact on the methodology accuracy of combining several profiling metrics or using several regression types when calculating the derating factor is also discussed.
{"title":"Early Assessment of the Fault Tolerance of Complex Digital Components From Virtual Platform Based Profiling","authors":"Luc Noizette;Florent Miller;Youri Helen;Régis Leveugle","doi":"10.1109/TNS.2025.3572557","DOIUrl":"https://doi.org/10.1109/TNS.2025.3572557","url":null,"abstract":"The broad spectrum of functionalities offered by complex digital components built around CPU cores makes them essential for onboard computers (OBCs) or instrument controller units (ICUs). In order to obtain a quick but accurate first assessment of their fault tolerance in radiative environments, both development and test teams must use a set of representative programs, before the actual application software is available. In this context, we propose a methodology based on high level software profiling metrics only, without any details on the actual CPU microarchitecture, to early assess fault tolerance of complex digital components. A derating factor equation only based on profiling metrics is calibrated with available fault tolerance data for a set of programs. This derating factor is then applied to the static cross section of the target device. The approach has been applied to a set of benchmarks running on a RISC-V softcore. Early predictions obtained from this methodology are compared to real measures collected during neutron irradiation tests. Results show that all the evaluations are within the margins of error of the experiment. The impact on the methodology accuracy of combining several profiling metrics or using several regression types when calculating the derating factor is also discussed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2717-2726"},"PeriodicalIF":1.9,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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