Pub Date : 2022-01-01DOI: 10.1587/elex.19.20220117
Lu Xiao, Wen Zhen, Shurui Cao, Yongbo Su, Zhi Jin
{"title":"A broadband static frequency divider up to 62GHz in InP DHBT with capacitive degeneration","authors":"Lu Xiao, Wen Zhen, Shurui Cao, Yongbo Su, Zhi Jin","doi":"10.1587/elex.19.20220117","DOIUrl":"https://doi.org/10.1587/elex.19.20220117","url":null,"abstract":"","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"17 1","pages":"20220117"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81857613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/elex.19.20210535
Runze Li, Ye Tian, Zhichao Du, Yu Wang, Qi Wang, Z. Huo
{"title":"A polynomial based valley search algorithm for 3D NAND flash memory","authors":"Runze Li, Ye Tian, Zhichao Du, Yu Wang, Qi Wang, Z. Huo","doi":"10.1587/elex.19.20210535","DOIUrl":"https://doi.org/10.1587/elex.19.20210535","url":null,"abstract":"","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"108 1","pages":"20210535"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85753713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/elex.19.20220276
Xueyan Bai, Shogo Katayama, Dan Yao, A. Kuwana, Zifei Xu, Haruo Kobayashi
{"title":"Asynchronous capacitive SAR ADC based on Hopfield network","authors":"Xueyan Bai, Shogo Katayama, Dan Yao, A. Kuwana, Zifei Xu, Haruo Kobayashi","doi":"10.1587/elex.19.20220276","DOIUrl":"https://doi.org/10.1587/elex.19.20220276","url":null,"abstract":"","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"89 1","pages":"20220276"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85983901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/elex.19.20220434
Tao Hu, Bowei Zhang, Kuo Zhao, Yang Wang, Jie Zhang
{"title":"Data BER analysis of OAM-assisted physical layer authentication system","authors":"Tao Hu, Bowei Zhang, Kuo Zhao, Yang Wang, Jie Zhang","doi":"10.1587/elex.19.20220434","DOIUrl":"https://doi.org/10.1587/elex.19.20220434","url":null,"abstract":"","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"19 1","pages":"20220434"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78322367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/elex.18.20210494
A. Oshiro, Naoki Nishigami, Takumi Yamamoto, Y. Nishida, J. Webber, Masayuki Fujita, T. Nagatsuma
{"title":"PAM4 48-Gbit/s wireless communication using a resonant tunneling diode in the 300-GHz band","authors":"A. Oshiro, Naoki Nishigami, Takumi Yamamoto, Y. Nishida, J. Webber, Masayuki Fujita, T. Nagatsuma","doi":"10.1587/elex.18.20210494","DOIUrl":"https://doi.org/10.1587/elex.18.20210494","url":null,"abstract":"","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"14 1","pages":"20210494"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78936556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/elex.18.20210391
Jiahui Cai, Lei Zhao, Chuliang Wei, Jiawei Liang
In this paper, some novel converters are proposed to solve the drawbacks of traditional phase-shifted full-bridge (PSFB) converter. In the primary side of proposed converters, the FB inverter is divided into two half-bridge inverters and the large-sized transformer is replaced by two small-sized transformers. By employing this structure, the zero voltage switching range can be extended and the primary circulating current existing in the additional PSFB converter is removed. In the secondary side, various rectifiers can be adopted to suit for different applications. Moreover, the primary power can be continuously transferred to secondary side in the proposed converters, which contributes to the reduction of output filter requirement. The circuit configuration, operational principle and relevant analysis of proposed converters are introduced in this paper. Experimental results on two typical prototype converters are built to validate the theoretical analysis.
{"title":"Analysis of novel phase-shifted full-bridge converters with wide ZVS range reduced filter requirement","authors":"Jiahui Cai, Lei Zhao, Chuliang Wei, Jiawei Liang","doi":"10.1587/elex.18.20210391","DOIUrl":"https://doi.org/10.1587/elex.18.20210391","url":null,"abstract":"In this paper, some novel converters are proposed to solve the drawbacks of traditional phase-shifted full-bridge (PSFB) converter. In the primary side of proposed converters, the FB inverter is divided into two half-bridge inverters and the large-sized transformer is replaced by two small-sized transformers. By employing this structure, the zero voltage switching range can be extended and the primary circulating current existing in the additional PSFB converter is removed. In the secondary side, various rectifiers can be adopted to suit for different applications. Moreover, the primary power can be continuously transferred to secondary side in the proposed converters, which contributes to the reduction of output filter requirement. The circuit configuration, operational principle and relevant analysis of proposed converters are introduced in this paper. Experimental results on two typical prototype converters are built to validate the theoretical analysis.","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"8 1","pages":"20210391"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89076367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/elex.18.20210503
Ping Luo, W. Guan, Liping Liang, Xin Qiu
This letter proposes a fast simplified successive-cancellation (FSSC) polar decoder architecture, supporting any code rate. With the parameter M , which is the maximum limit length of a special polar node, the authors present a novel scheme for online identification of special node in a polar code. In addition, under the parameter M , the proposed decoder has a well optimized architecture to reduce area, power and energy consumption, that due to require less internal memory using cross-layer calculation and less hardware resources for special node without pipeline technology. Synthesis and post-layout simulate results, based in TSMC 65nm CMOS technology, show that the consumption of hardware resources is reduced by 25%. The architecture and circuit techniques reduce the power to 54.9mW for an energy efficiency of 77.22 pJ/b.
{"title":"An implementation of fast polar codes decoder with reducing internal memory and supporting flexible code rate","authors":"Ping Luo, W. Guan, Liping Liang, Xin Qiu","doi":"10.1587/elex.18.20210503","DOIUrl":"https://doi.org/10.1587/elex.18.20210503","url":null,"abstract":"This letter proposes a fast simplified successive-cancellation (FSSC) polar decoder architecture, supporting any code rate. With the parameter M , which is the maximum limit length of a special polar node, the authors present a novel scheme for online identification of special node in a polar code. In addition, under the parameter M , the proposed decoder has a well optimized architecture to reduce area, power and energy consumption, that due to require less internal memory using cross-layer calculation and less hardware resources for special node without pipeline technology. Synthesis and post-layout simulate results, based in TSMC 65nm CMOS technology, show that the consumption of hardware resources is reduced by 25%. The architecture and circuit techniques reduce the power to 54.9mW for an energy efficiency of 77.22 pJ/b.","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"10 1","pages":"20210503"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83711827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/elex.19.20210563
A. Bose, Debaleen Biswas, S. Hishiki, Sumito Ouchi, K. Kitahara, K. Kawamura, A. Wakejima
Wereporttheeffectofathicknitridelayerontransmissionlossin GaN-on-3C-SiC/low resistivity Si (LR-Si). Microstrip lines of finite length and width with ground pads were fabricated on three GaN-on-3C-SiC/LR-Si epitaxial structures with varying nitride layer thicknesses of 3.2, 5.3, and 8.0 𝜇 m. The loss performance of microstrip lines on different substrates was evaluated in the frequency range of 0.1 to 9 GHz. The sample with 8.0 𝜇 m thick nitride layer showed a minimal loss of 0.3 dB/mm at 9 GHz compared to the other samples. The evaluated data from electromagnetic (EM) simulation also confirmed a decreasing trend of loss with increasing nitride layer thickness. Temperature dependent loss evaluation also verified the above fact.
{"title":"Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si","authors":"A. Bose, Debaleen Biswas, S. Hishiki, Sumito Ouchi, K. Kitahara, K. Kawamura, A. Wakejima","doi":"10.1587/elex.19.20210563","DOIUrl":"https://doi.org/10.1587/elex.19.20210563","url":null,"abstract":"Wereporttheeffectofathicknitridelayerontransmissionlossin GaN-on-3C-SiC/low resistivity Si (LR-Si). Microstrip lines of finite length and width with ground pads were fabricated on three GaN-on-3C-SiC/LR-Si epitaxial structures with varying nitride layer thicknesses of 3.2, 5.3, and 8.0 𝜇 m. The loss performance of microstrip lines on different substrates was evaluated in the frequency range of 0.1 to 9 GHz. The sample with 8.0 𝜇 m thick nitride layer showed a minimal loss of 0.3 dB/mm at 9 GHz compared to the other samples. The evaluated data from electromagnetic (EM) simulation also confirmed a decreasing trend of loss with increasing nitride layer thickness. Temperature dependent loss evaluation also verified the above fact.","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"63 1","pages":"20210563"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79504217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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