Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820287
J. Chiou, Yu-Chen Lin
Torsion micromirror devices that can achieve linear stepping angle effects play an important role in optical MEMS applications. However, traditional torsion micromirror devices driven by a single electrostatic electrode have difficulty meeting this requirement due to their nonlinear angle-voltage transfer characteristics. In this regard, the concept of a multiple-electrodecontrolled micromirror is proposed to eliminate this drawback. Through this novel design, linear stepping angles can be easily achieved by a set of linearly varied or constantly applied voltages. A simple mathematical model has been developed to predict the angle-voltage transfer characteristics of the proposed device and has been simulated with finite element simulations. The corresponding control strategies of this device, named the linear control strategy and the digital control strategy, are also proposed in this paper. The Cronos/MEMSCAP Multi-User MEMS Process (MUMPs) was used in conjunction with flip-chip bonding technology to fabricate the proposed torsion micromirror device. Experimental data indicates that the relative stepping angle error, between the fabricated device and the mathematical model, are within 5%.
{"title":"A multiple electrostatic electrodes torsion micromirror device with linear stepping angle effect","authors":"J. Chiou, Yu-Chen Lin","doi":"10.1109/JMEMS.2003.820287","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820287","url":null,"abstract":"Torsion micromirror devices that can achieve linear stepping angle effects play an important role in optical MEMS applications. However, traditional torsion micromirror devices driven by a single electrostatic electrode have difficulty meeting this requirement due to their nonlinear angle-voltage transfer characteristics. In this regard, the concept of a multiple-electrodecontrolled micromirror is proposed to eliminate this drawback. Through this novel design, linear stepping angles can be easily achieved by a set of linearly varied or constantly applied voltages. A simple mathematical model has been developed to predict the angle-voltage transfer characteristics of the proposed device and has been simulated with finite element simulations. The corresponding control strategies of this device, named the linear control strategy and the digital control strategy, are also proposed in this paper. The Cronos/MEMSCAP Multi-User MEMS Process (MUMPs) was used in conjunction with flip-chip bonding technology to fabricate the proposed torsion micromirror device. Experimental data indicates that the relative stepping angle error, between the fabricated device and the mathematical model, are within 5%.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82013050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820263
Yanhang Zhang, M. Dunn
We study, both experimentally and theoretically, the deformation of blanketed and patterned bilayer thin film microstructures subjected to temperature cycles from room temperature to elevated temperatures following processing by surface micromachining and release from the substrate. While the theoretical treatment is general, the experimental component focuses on beam-like microstructures consisting of a 0.5 /spl mu/m thick gold film on a polysilicon film that is either 1.5 /spl mu/m or 3.5 /spl mu/m thick. For all microstructures the underlying polysilicon film is the same size, but the gold film is patterned into a line that runs the length of the beam. Its width is varied from 0 to 100% of the width of the polysilicon. We experimentally characterize the deformation by measuring the full-field deflection of the gold/polysilicon bilayer beams as a function of temperature using a white-light interferometric microscope. From the deflection, the curvature is determined, and we report the evolution of curvature with the temperature cycling. Qualitatively the behavior is the same regardless of the linewidth. The quantitative differences can be described by a simple model incorporating an inelastic temperature-driven mechanism in addition to linear thermoelastic behavior. We show experimentally and/or analytically, how the parameters in the model vary with linewidth. The results are discussed in the context of the current understanding of microstructural evolution in thin-film metals, and in relation to anticipated thermoelastic response. We show that via a suitable thermal process, the thin film material microstructure can apparently be stabilized over a prescribed temperature range, rendering the subsequent deformation linear thermoelastic. We discuss the implications of these findings in the context of the design and fabrication of high-yield, dimensionally stable MEMS devices utilizing bilayer material systems. Although our measurements are focused on gold/polysilicon bilayer films, the concepts and associated analysis are applicable to other bilayer film systems, particularly ones with metals, although there will surely be quantitative differences.
{"title":"Deformation of blanketed and patterned bilayer thin-film microstructures during post-release and cyclic thermal loading","authors":"Yanhang Zhang, M. Dunn","doi":"10.1109/JMEMS.2003.820263","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820263","url":null,"abstract":"We study, both experimentally and theoretically, the deformation of blanketed and patterned bilayer thin film microstructures subjected to temperature cycles from room temperature to elevated temperatures following processing by surface micromachining and release from the substrate. While the theoretical treatment is general, the experimental component focuses on beam-like microstructures consisting of a 0.5 /spl mu/m thick gold film on a polysilicon film that is either 1.5 /spl mu/m or 3.5 /spl mu/m thick. For all microstructures the underlying polysilicon film is the same size, but the gold film is patterned into a line that runs the length of the beam. Its width is varied from 0 to 100% of the width of the polysilicon. We experimentally characterize the deformation by measuring the full-field deflection of the gold/polysilicon bilayer beams as a function of temperature using a white-light interferometric microscope. From the deflection, the curvature is determined, and we report the evolution of curvature with the temperature cycling. Qualitatively the behavior is the same regardless of the linewidth. The quantitative differences can be described by a simple model incorporating an inelastic temperature-driven mechanism in addition to linear thermoelastic behavior. We show experimentally and/or analytically, how the parameters in the model vary with linewidth. The results are discussed in the context of the current understanding of microstructural evolution in thin-film metals, and in relation to anticipated thermoelastic response. We show that via a suitable thermal process, the thin film material microstructure can apparently be stabilized over a prescribed temperature range, rendering the subsequent deformation linear thermoelastic. We discuss the implications of these findings in the context of the design and fabrication of high-yield, dimensionally stable MEMS devices utilizing bilayer material systems. Although our measurements are focused on gold/polysilicon bilayer films, the concepts and associated analysis are applicable to other bilayer film systems, particularly ones with metals, although there will surely be quantitative differences.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74791873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820285
F. Cattaneo, K. Baldwin, Shu Yang, T. Krupenkine, S. Ramachandran, J. Rogers
This communication introduces a digital design for tunable microfluidic optical fiber devices. In these systems, multiple, independently controlled microfluidic plugs are pumped into or out of overlap with a fiber structure to modulate its transmission characteristics. The devices described here use eight plugs, eight electrowetting pumps and a corresponding set of molded planar recirculating microchannels to control the depth of the narrowband loss feature associated with a long period fiber grating. Optical measurements illustrate the digital and relatively fast operation of this type of microfluidic fiber device.
{"title":"Digitally tunable microfluidic optical fiber devices","authors":"F. Cattaneo, K. Baldwin, Shu Yang, T. Krupenkine, S. Ramachandran, J. Rogers","doi":"10.1109/JMEMS.2003.820285","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820285","url":null,"abstract":"This communication introduces a digital design for tunable microfluidic optical fiber devices. In these systems, multiple, independently controlled microfluidic plugs are pumped into or out of overlap with a fiber structure to modulate its transmission characteristics. The devices described here use eight plugs, eight electrowetting pumps and a corresponding set of molded planar recirculating microchannels to control the depth of the narrowband loss feature associated with a long period fiber grating. Optical measurements illustrate the digital and relatively fast operation of this type of microfluidic fiber device.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88757978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820293
H. Gardeniers, R. Luttge, E. Berenschot, M. Boer, S. Yeshurun, M. Hefetz, R. V. Oever, A. Berg
This paper presents a novel process for the fabrication of out-of-plane hollow microneedles in silicon. The fabrication method consists of a sequence of deep-reactive ion etching (DRIE), anisotropic wet etching and conformal thin film deposition, and allows needle shapes with different, lithography-defined tip curvature. In this study, the length of the needles varied between 150 and 350 micrometers. The widest dimension of the needle at its base was 250 /spl mu/m. Preliminary application tests of the needle arrays show that they are robust and permit skin penetration without breakage. Transdermal water loss measurements before and after microneedle skin penetration are reported. Drug delivery is increased approximately by a factor of 750 in microneedle patch applications with respect to diffusion alone. The feasibility of using the microneedle array as a blood sampler on a capillary electrophoresis chip is demonstrated.
{"title":"Silicon micromachined hollow microneedles for transdermal liquid transport","authors":"H. Gardeniers, R. Luttge, E. Berenschot, M. Boer, S. Yeshurun, M. Hefetz, R. V. Oever, A. Berg","doi":"10.1109/JMEMS.2003.820293","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820293","url":null,"abstract":"This paper presents a novel process for the fabrication of out-of-plane hollow microneedles in silicon. The fabrication method consists of a sequence of deep-reactive ion etching (DRIE), anisotropic wet etching and conformal thin film deposition, and allows needle shapes with different, lithography-defined tip curvature. In this study, the length of the needles varied between 150 and 350 micrometers. The widest dimension of the needle at its base was 250 /spl mu/m. Preliminary application tests of the needle arrays show that they are robust and permit skin penetration without breakage. Transdermal water loss measurements before and after microneedle skin penetration are reported. Drug delivery is increased approximately by a factor of 750 in microneedle patch applications with respect to diffusion alone. The feasibility of using the microneedle array as a blood sampler on a capillary electrophoresis chip is demonstrated.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91176105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.821468
B. Donald, C. Levey, C. McGray, D. Rus, M. Sinclair
The ability for a device to locomote freely on a surface requires the ability to deliver power in a way that does not restrain the device's motion. This paper presents a MEMS actuator that operates free of any physically restraining tethers. We show how a capacitive coupling can be used to deliver power to untethered MEMS devices, independently of the position and orientation of those devices. Then, we provide a simple mechanical release process for detaching these MEMS devices from the fabrication substrate once chemical processing is complete. To produce these untethered microactuators in a batch-compatible manner while leveraging existing MEMS infrastructure, we have devised a novel postprocessing sequence for a standard MEMS multiproject wafer process. Through the use of this sequence, we show how to add, post hoc , a layer of dielectric between two previously deposited polysilicon films. We have demonstrated the effectiveness of these techniques through the successful fabrication and operation of untethered scratch drive actuators. Locomotion of these actuators is controlled by frequency modulation, and the devices achieve maximum speeds of over 1.5 mm/s.
{"title":"Power delivery and locomotion of untethered microactuators","authors":"B. Donald, C. Levey, C. McGray, D. Rus, M. Sinclair","doi":"10.1109/JMEMS.2003.821468","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.821468","url":null,"abstract":"The ability for a device to locomote freely on a surface requires the ability to deliver power in a way that does not restrain the device's motion. This paper presents a MEMS actuator that operates free of any physically restraining tethers. We show how a capacitive coupling can be used to deliver power to untethered MEMS devices, independently of the position and orientation of those devices. Then, we provide a simple mechanical release process for detaching these MEMS devices from the fabrication substrate once chemical processing is complete. To produce these untethered microactuators in a batch-compatible manner while leveraging existing MEMS infrastructure, we have devised a novel postprocessing sequence for a standard MEMS multiproject wafer process. Through the use of this sequence, we show how to add, post hoc , a layer of dielectric between two previously deposited polysilicon films. We have demonstrated the effectiveness of these techniques through the successful fabrication and operation of untethered scratch drive actuators. Locomotion of these actuators is controlled by frequency modulation, and the devices achieve maximum speeds of over 1.5 mm/s.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77811012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820292
Sang Hoon Lee, D. Eddington, Young-Min Kim, Woo-Seung Kim, D. Beebe
The control mechanism and fluid dynamic properties of a previously developed organic pH regulation system are analyzed. The system regulates an output fluid stream to a pH of 6.7 with varying input flow rates. A pH sensitive hydrogel post acts as the feedback pH sensor and flow regulator. The control mechanism of the system is studied through numerical modeling of the regulator and the model is validated through experimentation. Analysis of the fluid dynamics at a T-channel junction, in which two buffer streams merge into one, is performed by solving the Navier-Stokes equation with commercial software. Various areas of a star-shaped orifice are occluded by a flexible membrane to throttle the rate that compensating buffer is fed back into the system. The relationship between orifice open area and volume of compensating buffer through the orifice was analyzed numerically. The axial and lateral visualization of the hydrogel post was obtained via optical microscopy. The model of the regulation system successfully predicts experimental results.
{"title":"Control mechanism of an organic self-regulating microfluidic system","authors":"Sang Hoon Lee, D. Eddington, Young-Min Kim, Woo-Seung Kim, D. Beebe","doi":"10.1109/JMEMS.2003.820292","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820292","url":null,"abstract":"The control mechanism and fluid dynamic properties of a previously developed organic pH regulation system are analyzed. The system regulates an output fluid stream to a pH of 6.7 with varying input flow rates. A pH sensitive hydrogel post acts as the feedback pH sensor and flow regulator. The control mechanism of the system is studied through numerical modeling of the regulator and the model is validated through experimentation. Analysis of the fluid dynamics at a T-channel junction, in which two buffer streams merge into one, is performed by solving the Navier-Stokes equation with commercial software. Various areas of a star-shaped orifice are occluded by a flexible membrane to throttle the rate that compensating buffer is fed back into the system. The relationship between orifice open area and volume of compensating buffer through the orifice was analyzed numerically. The axial and lateral visualization of the hydrogel post was obtained via optical microscopy. The model of the regulation system successfully predicts experimental results.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73561478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820286
E. Tadmor, G. Kósa
This paper deals with the bending of layered piezoelectric beams (multimorphs) subjected to arbitrary electrical and mechanical loading. Weinberg (1999) obtained a closed-form solution to this problem using Euler-Bernoulli beam theory and integrated equilibrium equations. In his analysis, Weinberg assumes that the electric field is constant through the thickness of the piezoelectric layers. This approximation is valid for materials with small electromechanical coupling (EMC) coefficients. In this paper, we relax this constraint and obtain a solution which accounts for the effect of strain on the electric field in the layers. We find that Weinberg's solution can be extended to arbitrary EMC with a simple correction to the moment of inertia I of the piezoelectric layers. The EMC correction amounts to replacing I with (1+/spl xi/)I, where /spl xi/ is the square of the expedient coupling coefficient. The error in beam curvature introduced by neglecting the effect of EMC is shown to be proportional to /spl xi/. This effect can be quite significant for modern piezoelectric materials which tend to have large EMC coefficients. The formulation is applied to three example cases: a cantilever unimorph, an asymmetric bimorph and a three-layer multimorph with an elastic core. The theoretical predictions for the last two examples are compared to simulations using the finite-element method (FEM) and found to be in excellent agreement.
{"title":"Electromechanical coupling correction for piezoelectric layered beams","authors":"E. Tadmor, G. Kósa","doi":"10.1109/JMEMS.2003.820286","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820286","url":null,"abstract":"This paper deals with the bending of layered piezoelectric beams (multimorphs) subjected to arbitrary electrical and mechanical loading. Weinberg (1999) obtained a closed-form solution to this problem using Euler-Bernoulli beam theory and integrated equilibrium equations. In his analysis, Weinberg assumes that the electric field is constant through the thickness of the piezoelectric layers. This approximation is valid for materials with small electromechanical coupling (EMC) coefficients. In this paper, we relax this constraint and obtain a solution which accounts for the effect of strain on the electric field in the layers. We find that Weinberg's solution can be extended to arbitrary EMC with a simple correction to the moment of inertia I of the piezoelectric layers. The EMC correction amounts to replacing I with (1+/spl xi/)I, where /spl xi/ is the square of the expedient coupling coefficient. The error in beam curvature introduced by neglecting the effect of EMC is shown to be proportional to /spl xi/. This effect can be quite significant for modern piezoelectric materials which tend to have large EMC coefficients. The formulation is applied to three example cases: a cantilever unimorph, an asymmetric bimorph and a three-layer multimorph with an elastic core. The theoretical predictions for the last two examples are compared to simulations using the finite-element method (FEM) and found to be in excellent agreement.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86067939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820280
V. T. Srikar, A. Swan, M. Unlu, B. Goldberg, S. Spearing
Micron-scale characterization of mechanical stresses is essential for the successful design and operation of many micromachined devices. Here we report the use of Raman spectroscopy to measure the bending stresses in deep reactive-ion etched silicon flexures with a stress resolution of /spl sim/10 MPa and spatial resolution of /spl sim/1 /spl mu/m. The accuracy of the technique, as assessed by comparison to analytical and finite-element models of the deformation, is conservatively estimated to be 25 MPa. Implications for the use of this technique in microsystems design are discussed.
{"title":"Micro-Raman measurement of bending stresses in micromachined silicon flexures","authors":"V. T. Srikar, A. Swan, M. Unlu, B. Goldberg, S. Spearing","doi":"10.1109/JMEMS.2003.820280","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820280","url":null,"abstract":"Micron-scale characterization of mechanical stresses is essential for the successful design and operation of many micromachined devices. Here we report the use of Raman spectroscopy to measure the bending stresses in deep reactive-ion etched silicon flexures with a stress resolution of /spl sim/10 MPa and spatial resolution of /spl sim/1 /spl mu/m. The accuracy of the technique, as assessed by comparison to analytical and finite-element models of the deformation, is conservatively estimated to be 25 MPa. Implications for the use of this technique in microsystems design are discussed.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87831682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820278
Chester G. Wilson, Y. Gianchandani, A. Wendt
In order to understand the details of high-field breakdown in microstructures that are vacuum packaged, a series of experiments are used to determine characteristics of microdischarges. The results support a reinterpretation of conventional assumptions based upon large scale discharges. When planar microelectrodes are used, Paschen's curve is not applicable in the traditional sense: the breakdown voltage is relatively insensitive to pressure in the 1-20 torr range, and remains at /spl sim/400 V for air ambient. However, the spatial distribution of discharge current does vary with the pressure and the power. Large voltage gradients are supported in the glow region which is confined to a few millimeters directly above the cathode, and within a few hundred microns of its lateral edge. Their magnitudes range from 100,000-500,000 V/m for operating pressures ranging from 1.2-6 torr. Based on these results, guidelines are provided for the design of high-voltage microsystems.
{"title":"High-voltage constraints for vacuum packaged microstructures","authors":"Chester G. Wilson, Y. Gianchandani, A. Wendt","doi":"10.1109/JMEMS.2003.820278","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820278","url":null,"abstract":"In order to understand the details of high-field breakdown in microstructures that are vacuum packaged, a series of experiments are used to determine characteristics of microdischarges. The results support a reinterpretation of conventional assumptions based upon large scale discharges. When planar microelectrodes are used, Paschen's curve is not applicable in the traditional sense: the breakdown voltage is relatively insensitive to pressure in the 1-20 torr range, and remains at /spl sim/400 V for air ambient. However, the spatial distribution of discharge current does vary with the pressure and the power. Large voltage gradients are supported in the glow region which is confined to a few millimeters directly above the cathode, and within a few hundred microns of its lateral edge. Their magnitudes range from 100,000-500,000 V/m for operating pressures ranging from 1.2-6 torr. Based on these results, guidelines are provided for the design of high-voltage microsystems.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89017039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-01DOI: 10.1109/JMEMS.2003.820260
P. Scheeper, B. Nordstrand, J. O. Gullv, B. Liu, T. Clausen, L. Midjord, T. Storgaard-Larsen
This paper presents a new type of measurement microphone that is based on MEMS technology. The silicon chip design and fabrication are discussed, as well as the specially developed packaging technology. The microphones are tested on a number of key parameters for measurement microphones: sensitivity, noise level, frequency response, and immunity to disturbing environmental parameters, such as temperature changes, humidity, static pressure variations, and vibration. A sensitivity of 22 mV/Pa (-33 dB re. 1 V/Pa), and a noise level of 23 dB(A) were measured. The noise level is 7 dB lower than state-of-the-art 1/4-inch measurement microphones. A good uniformity on sensitivity and frequency response has been measured. The sensitivity to temperature changes, humidity, static pressure variations and vibrations is fully comparable to the traditional measurement microphones. This paper shows that high-quality measurement microphones can be made using MEMS technology, with a superior noise performance.
本文提出了一种基于MEMS技术的新型测量传声器。讨论了硅芯片的设计和制造，以及专门开发的封装技术。对测量麦克风的一些关键参数进行了测试:灵敏度、噪声水平、频率响应以及对干扰环境参数(如温度变化、湿度、静压变化和振动)的抗扰性。测量到的灵敏度为22 mV/Pa (-33 dB = 1 V/Pa)，噪声级为23 dB(A)。噪音水平比最先进的1/4英寸测量麦克风低7分贝。在灵敏度和频率响应上具有良好的均匀性。对温度变化、湿度、静压变化和振动的灵敏度完全可以与传统的测量麦克风相媲美。本文表明，采用MEMS技术可以制造出高质量的测量麦克风，并且具有优异的噪声性能。
{"title":"A new measurement microphone based on MEMS technology","authors":"P. Scheeper, B. Nordstrand, J. O. Gullv, B. Liu, T. Clausen, L. Midjord, T. Storgaard-Larsen","doi":"10.1109/JMEMS.2003.820260","DOIUrl":"https://doi.org/10.1109/JMEMS.2003.820260","url":null,"abstract":"This paper presents a new type of measurement microphone that is based on MEMS technology. The silicon chip design and fabrication are discussed, as well as the specially developed packaging technology. The microphones are tested on a number of key parameters for measurement microphones: sensitivity, noise level, frequency response, and immunity to disturbing environmental parameters, such as temperature changes, humidity, static pressure variations, and vibration. A sensitivity of 22 mV/Pa (-33 dB re. 1 V/Pa), and a noise level of 23 dB(A) were measured. The noise level is 7 dB lower than state-of-the-art 1/4-inch measurement microphones. A good uniformity on sensitivity and frequency response has been measured. The sensitivity to temperature changes, humidity, static pressure variations and vibrations is fully comparable to the traditional measurement microphones. This paper shows that high-quality measurement microphones can be made using MEMS technology, with a superior noise performance.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90388063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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