Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429552
S. Watanabe, K. Saito, T. Kurakata, O. Hashimoto
In this paper, first, FDTD, semi-implicit method for pressure linked equations (SIMPLE), Monte Carlo and radiative energy absorption distribution (READ) methods are combined to calculate electromagnetic field and all the heat transfer phenomena of heat transport, heat transfer by air convection and heat radiation (It is called FDTD-SIMPLE-MR method.). The temperature distribution of an one-layer EM-absorber using a lossy dielectric material under high power injection is calculated using FDTD-SIMPLE-MR method and a traditional method. And the both calculated temperature distributions of the absorber are compared. As a result, the more detailed temperature distribution of the absorber is obtained by FDTD-SIMPLE-MR method.
{"title":"Analytical study of temperature distribution of one-layer EM-absorber using a lossy dielectric material","authors":"S. Watanabe, K. Saito, T. Kurakata, O. Hashimoto","doi":"10.1109/APMC.2006.4429552","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429552","url":null,"abstract":"In this paper, first, FDTD, semi-implicit method for pressure linked equations (SIMPLE), Monte Carlo and radiative energy absorption distribution (READ) methods are combined to calculate electromagnetic field and all the heat transfer phenomena of heat transport, heat transfer by air convection and heat radiation (It is called FDTD-SIMPLE-MR method.). The temperature distribution of an one-layer EM-absorber using a lossy dielectric material under high power injection is calculated using FDTD-SIMPLE-MR method and a traditional method. And the both calculated temperature distributions of the absorber are compared. As a result, the more detailed temperature distribution of the absorber is obtained by FDTD-SIMPLE-MR method.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128461209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429748
Chang-Soon Choi, Yozo Shoji
We present the third-order intermodulation distortion characteristics (IMD3) of millimeter-wave self- heterodyne transmission techniques for the applications of multichannel analog signal transmission. Since local oscillator (LO) carriers are simultaneously injected to the receiver together with RF signals, the power balance between LO and RF is a key parameter to determine nonlinear characteristics of self- heterodyne down-conversion mixer although the equal power balancing is theoretically optimum condition for the highest carrier-to-noise ratio (CNR). We observe higher LO power ratio gives us the better suppression of IMD3 in frequency down- conversion process and clarify its dependence on total RF received power.
{"title":"Third-order intermodulation distortion characteristics of millimeter-wave self-heterodyne transmission techniques","authors":"Chang-Soon Choi, Yozo Shoji","doi":"10.1109/APMC.2006.4429748","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429748","url":null,"abstract":"We present the third-order intermodulation distortion characteristics (IMD3) of millimeter-wave self- heterodyne transmission techniques for the applications of multichannel analog signal transmission. Since local oscillator (LO) carriers are simultaneously injected to the receiver together with RF signals, the power balance between LO and RF is a key parameter to determine nonlinear characteristics of self- heterodyne down-conversion mixer although the equal power balancing is theoretically optimum condition for the highest carrier-to-noise ratio (CNR). We observe higher LO power ratio gives us the better suppression of IMD3 in frequency down- conversion process and clarify its dependence on total RF received power.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128630573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429721
Yi-Chieh Lee, Syuan-Ci Lin, Jwo-Shiun Sun
A new design of slot antenna by CPW-fed is proposed for ultra-wideband (UWB) applications. The proposed antenna consists of a CPW-fed, and a pair of symmetry curved radiating slot. Using tapered slot forms obtain the bandwidth from 3 GHz to 20 GHz over entire UWB spectrum. The proposed antenna could cover simulated and measured results show that new design CPW-fed UWB slot antenna keeps acceptable patterns and gains. Detail design and experiment are showed and discussed in this paper.
{"title":"CPW-Fed UWB slot antenna","authors":"Yi-Chieh Lee, Syuan-Ci Lin, Jwo-Shiun Sun","doi":"10.1109/APMC.2006.4429721","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429721","url":null,"abstract":"A new design of slot antenna by CPW-fed is proposed for ultra-wideband (UWB) applications. The proposed antenna consists of a CPW-fed, and a pair of symmetry curved radiating slot. Using tapered slot forms obtain the bandwidth from 3 GHz to 20 GHz over entire UWB spectrum. The proposed antenna could cover simulated and measured results show that new design CPW-fed UWB slot antenna keeps acceptable patterns and gains. Detail design and experiment are showed and discussed in this paper.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129540538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429498
U. Rohde, A. Poddar
This paper discusses the impact of technological scaling and minimization of flicker (1/f) noise on SiGe HBTs in coupled mode N-push oscillator/VCO configuration, which has recently emerged as a strong contender for RF and mixed- signal applications. 1/f noise in SiGe HBTs is sensitive with device scaling and significantly up- converted in coupled mode oscillators due to the presence of asymmetrical output from their subsequent N oscillator sub-circuits that forms N-push configuration. Improving the symmetry of the coupled mode N-Push topology develops a method of minimizing the 1/f noise up-conversion and phase noise in the scaled device. The experimental result shows 12 dB improvement in the noise performances for a typical symmetrical coupled mode VCO at 10 kHz offset from the carrier frequency 8000 MHz in comparison to the asymmetrical version of the coupled mode scaled device (SiGe HBTs).
{"title":"Technological scaling and minimization of 1/f noise in SiGe HBTs coupled mode N-Push oscillator/VCO","authors":"U. Rohde, A. Poddar","doi":"10.1109/APMC.2006.4429498","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429498","url":null,"abstract":"This paper discusses the impact of technological scaling and minimization of flicker (1/f) noise on SiGe HBTs in coupled mode N-push oscillator/VCO configuration, which has recently emerged as a strong contender for RF and mixed- signal applications. 1/f noise in SiGe HBTs is sensitive with device scaling and significantly up- converted in coupled mode oscillators due to the presence of asymmetrical output from their subsequent N oscillator sub-circuits that forms N-push configuration. Improving the symmetry of the coupled mode N-Push topology develops a method of minimizing the 1/f noise up-conversion and phase noise in the scaled device. The experimental result shows 12 dB improvement in the noise performances for a typical symmetrical coupled mode VCO at 10 kHz offset from the carrier frequency 8000 MHz in comparison to the asymmetrical version of the coupled mode scaled device (SiGe HBTs).","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123855824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429629
Pu-Hua Deng, Chi-Hsueh Wang, C. Chen
Novel microstrip diplexer structures composed of a dual-passband filter together with two matching circuits are proposed. By using only a single dual-passband filter, the proposed diplexer may be made compact when compared with the conventional diplexer configuration which has two single- passband filters. In this study, the dual-passband filter is realized using the parallel-coupled microstrip structures, and the matching circuits are developed based on the stepped- impedance transmission-line sections along with suitable open stubs. By suitably incorporating the open stubs into the matching circuits, a 3 rd-order Chebyshev microstrip diplexer with dual center frequencies at 2.36 GHz and 5.17 GHz and an acceptable isolation is implemented.
{"title":"Compact microstrip diplexers based on a dual-passband filter","authors":"Pu-Hua Deng, Chi-Hsueh Wang, C. Chen","doi":"10.1109/APMC.2006.4429629","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429629","url":null,"abstract":"Novel microstrip diplexer structures composed of a dual-passband filter together with two matching circuits are proposed. By using only a single dual-passband filter, the proposed diplexer may be made compact when compared with the conventional diplexer configuration which has two single- passband filters. In this study, the dual-passband filter is realized using the parallel-coupled microstrip structures, and the matching circuits are developed based on the stepped- impedance transmission-line sections along with suitable open stubs. By suitably incorporating the open stubs into the matching circuits, a 3 rd-order Chebyshev microstrip diplexer with dual center frequencies at 2.36 GHz and 5.17 GHz and an acceptable isolation is implemented.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"275 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124013159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429581
C. Kwak, Kiburm Ahn, D. Chang, I. Yom
Thermal resistance of a 3 GHz power amplifier MMIC has been calculated with finite element (FE) analyses. Through comparative FE analyses it has been found that a carrier for infrared (IR) scan test should have high thermal conductivity if it is for measuring thermal resistance of an MMIC only. IR scan results showed that the FE analysis provided temperature distribution quite close to the real and, also, that IR scans could not measure the maximum channel temperature because of not enough resolution. Consequently it has been proved that the FE method can provide more realistic thermal resistance of an MMIC than IR scan test when the gate length is smaller than IR scanner's resolution as well as when the gate is screened by an airbridge.
{"title":"Numerical analysis and IR scan test for thermal resistance of GaAs MMIC in a communications satellite","authors":"C. Kwak, Kiburm Ahn, D. Chang, I. Yom","doi":"10.1109/APMC.2006.4429581","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429581","url":null,"abstract":"Thermal resistance of a 3 GHz power amplifier MMIC has been calculated with finite element (FE) analyses. Through comparative FE analyses it has been found that a carrier for infrared (IR) scan test should have high thermal conductivity if it is for measuring thermal resistance of an MMIC only. IR scan results showed that the FE analysis provided temperature distribution quite close to the real and, also, that IR scans could not measure the maximum channel temperature because of not enough resolution. Consequently it has been proved that the FE method can provide more realistic thermal resistance of an MMIC than IR scan test when the gate length is smaller than IR scanner's resolution as well as when the gate is screened by an airbridge.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123365445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429415
M. Elnaggar, S. Safavi-Naeini, S. Chaudhuri
We propose a novel dimensionality metric for multi-antenna systems. Being SNR- independent, the metric is suitable for multipath richness comparison of several scenarios having their channel matrices Frobenius-normalized. The metric is based on the equivalence between the given singular values distribution of the normalized channel matrix and those of equi-contribution parallel sub-channels. Under 3 different equivalence criteria (mean, variance or Mean-Square-Error with respect to the optimum singular value), the proposed metric yields the same value, namely, the squared mean of the Frobenius- normalized singular values scaled by a factor (min/max) of the number of the transmit/receive elements.
{"title":"A novel dimensionality metric for multi-antenna systems","authors":"M. Elnaggar, S. Safavi-Naeini, S. Chaudhuri","doi":"10.1109/APMC.2006.4429415","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429415","url":null,"abstract":"We propose a novel dimensionality metric for multi-antenna systems. Being SNR- independent, the metric is suitable for multipath richness comparison of several scenarios having their channel matrices Frobenius-normalized. The metric is based on the equivalence between the given singular values distribution of the normalized channel matrix and those of equi-contribution parallel sub-channels. Under 3 different equivalence criteria (mean, variance or Mean-Square-Error with respect to the optimum singular value), the proposed metric yields the same value, namely, the squared mean of the Frobenius- normalized singular values scaled by a factor (min/max) of the number of the transmit/receive elements.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121398761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429744
K. Watanabe, Y. Takayama, K. Yamaguchi, T. Fujita, K. Maenaka
Intermodulation distortion products and their asymmetry in microwave power amplifiers were drastically improved by intrinsic drain second-harmonic short-circuit termination. The FET drain parasitic inductance was taken into account to construct a series resonant circuit with a resonant-frequency at the second-harmonic. 1 GHz- band Si MOSFET power amplifiers were fabricated and the remarkable improvement of third-order and fifth-order intermodulation distortion products and their asymmetries were achieved by the proposed second-harmonic short-circuit termination.
{"title":"Improvement of intermodulation distortion in microwave power amplifiers with intrinsic second-harmonic short-circuit termination","authors":"K. Watanabe, Y. Takayama, K. Yamaguchi, T. Fujita, K. Maenaka","doi":"10.1109/APMC.2006.4429744","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429744","url":null,"abstract":"Intermodulation distortion products and their asymmetry in microwave power amplifiers were drastically improved by intrinsic drain second-harmonic short-circuit termination. The FET drain parasitic inductance was taken into account to construct a series resonant circuit with a resonant-frequency at the second-harmonic. 1 GHz- band Si MOSFET power amplifiers were fabricated and the remarkable improvement of third-order and fifth-order intermodulation distortion products and their asymmetries were achieved by the proposed second-harmonic short-circuit termination.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114174197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, multiple stacked capacitively-loaded coupled lines are adopted for the design of microstrip filter. The filter shows different stopband behavior with respect to even or odd total number of resonators. The transmission zeros may be located around the lower, higher, or both sides of the passband's skirt. Moreover, the use of capacitively- loaded lines can produce another transmission zero in the higher stopband. Adopting these characteristics, the bandpass filter and diplexer can be developed readily. These experimental results are evident in our proposed structure.
{"title":"The microstrip filter with multiple stacked capacitively-loaded coupled lines","authors":"Ching‐Wen Tang, Janne-Wha Wu, Chia-Chang Hu, Hong-ching Lin, Shin-Shien Yeh","doi":"10.1109/APMC.2006.4429702","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429702","url":null,"abstract":"In this paper, multiple stacked capacitively-loaded coupled lines are adopted for the design of microstrip filter. The filter shows different stopband behavior with respect to even or odd total number of resonators. The transmission zeros may be located around the lower, higher, or both sides of the passband's skirt. Moreover, the use of capacitively- loaded lines can produce another transmission zero in the higher stopband. Adopting these characteristics, the bandpass filter and diplexer can be developed readily. These experimental results are evident in our proposed structure.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114616008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429738
S. Hantscher, A. Reisenzahn, C. Diskus
In this paper the scattering behavior of two electrically conducting objects (sphere and cylinder) will be described. The objects have been illuminated by a quasi-monostatic ultra-wideband (UWB) radar system. Using very short pulses the transfer function of the targets could be calculated over a wide range of frequencies. Besides the frequency dependence the influence of the polarization was investigated. This allowed the target identification by using only A-scans in two different polarization planes. Furthermore, geometrical parameters of the targets, e. g., the diameter, could be determined from the calibrated data easily.
{"title":"Target identification with polarization dependent transfer functions","authors":"S. Hantscher, A. Reisenzahn, C. Diskus","doi":"10.1109/APMC.2006.4429738","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429738","url":null,"abstract":"In this paper the scattering behavior of two electrically conducting objects (sphere and cylinder) will be described. The objects have been illuminated by a quasi-monostatic ultra-wideband (UWB) radar system. Using very short pulses the transfer function of the targets could be calculated over a wide range of frequencies. Besides the frequency dependence the influence of the polarization was investigated. This allowed the target identification by using only A-scans in two different polarization planes. Furthermore, geometrical parameters of the targets, e. g., the diameter, could be determined from the calibrated data easily.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126012744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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