The crystalline structure, surface morphology, dielectric and ferroelectric properties of 0~10wt% Ho2O3 doped (Ba0.75Sr0.25) TiO3 ceramics prepared by conventional solid state method were studied using X-ray diffractometer, scanning electron microscopy, LCR measuring system and ferroelectric property test systems aiming for ceramic capacitor applications. It is found that proper amount of Ho2O3 can refine grains of the system. With the increase of Ho2O3 doping content, the average grain size of (Ba0.75Sr0.25) TiO3 ceramics decreases. When Ho2O3>8 wt%, (Ba0.75Sr0.25) TiO3 based ceramic samples are multi-phase compounds with typical perovskite structure accompanied by the appearance of cylindrical grains. The Ho3+ ions substitute the host A sites and B sites of (Ba0.75Sr0.25) TiO3 perovskite lattice, resulting in the lattice distortion of the system and the change of the relative dielectric constant and dielectric loss at room temperature. With the increase of Ho2O2 doping content, the relative dielectric constant at room temperature of the system increases first and then decreases. The maximum of relative dielectric constant at room temperature can be found in the 1 wt% Ho2O3 doped (Ba0.75Sr0.25) TiO3 ceramics. When Ho2O3＞1 wt%, the maximum of relative dielectric constant ermax decreases and the temperature corresponding to the maximum of relative dielectric constant Tm shifts toward lower temperature with the increase of Ho2O3 doping content. The (Ba0.75Sr0.25) TiO3 ceramics with high Ho2O3 content show relaxor-like behavior which is characterized by the typical diffuse phase transition and frequency dispersion of dielectric constant. However, the (Ba0.75Sr0.25) TiO3 ceramics with low Ho2O3 content do not exhibit permittivity frequency dispersion. According to the P-E hysteresis loops of Ho2O3 doped (Ba0.75Sr0.25) TiO3 ceramics, the ferroelectricity was increased and then decreased with the increase of Ho2O3 doping content. With the increase of Ho2O3 doping content, the P-E relationships turn out to be straight lines, implying the paraelectric phase for (Ba0.75Sr0.25) TiO3 ceramics with high Ho2O3 content.
{"title":"Dielectric and Ferroelectric Properties of Ho2O3 Doped Barium Strontium Titanate Ceramicsq","authors":"Mengyuan Zhang, Congyu Li, Fangxu Chen, Long Chen, Jianhua Liu, Tianyu Chen, Chen Zhang","doi":"10.11648/J.IJMSA.20190801.12","DOIUrl":"https://doi.org/10.11648/J.IJMSA.20190801.12","url":null,"abstract":"The crystalline structure, surface morphology, dielectric and ferroelectric properties of 0~10wt% Ho2O3 doped (Ba0.75Sr0.25) TiO3 ceramics prepared by conventional solid state method were studied using X-ray diffractometer, scanning electron microscopy, LCR measuring system and ferroelectric property test systems aiming for ceramic capacitor applications. It is found that proper amount of Ho2O3 can refine grains of the system. With the increase of Ho2O3 doping content, the average grain size of (Ba0.75Sr0.25) TiO3 ceramics decreases. When Ho2O3>8 wt%, (Ba0.75Sr0.25) TiO3 based ceramic samples are multi-phase compounds with typical perovskite structure accompanied by the appearance of cylindrical grains. The Ho3+ ions substitute the host A sites and B sites of (Ba0.75Sr0.25) TiO3 perovskite lattice, resulting in the lattice distortion of the system and the change of the relative dielectric constant and dielectric loss at room temperature. With the increase of Ho2O2 doping content, the relative dielectric constant at room temperature of the system increases first and then decreases. The maximum of relative dielectric constant at room temperature can be found in the 1 wt% Ho2O3 doped (Ba0.75Sr0.25) TiO3 ceramics. When Ho2O3＞1 wt%, the maximum of relative dielectric constant ermax decreases and the temperature corresponding to the maximum of relative dielectric constant Tm shifts toward lower temperature with the increase of Ho2O3 doping content. The (Ba0.75Sr0.25) TiO3 ceramics with high Ho2O3 content show relaxor-like behavior which is characterized by the typical diffuse phase transition and frequency dispersion of dielectric constant. However, the (Ba0.75Sr0.25) TiO3 ceramics with low Ho2O3 content do not exhibit permittivity frequency dispersion. According to the P-E hysteresis loops of Ho2O3 doped (Ba0.75Sr0.25) TiO3 ceramics, the ferroelectricity was increased and then decreased with the increase of Ho2O3 doping content. With the increase of Ho2O3 doping content, the P-E relationships turn out to be straight lines, implying the paraelectric phase for (Ba0.75Sr0.25) TiO3 ceramics with high Ho2O3 content.","PeriodicalId":14116,"journal":{"name":"International Journal of Materials Science and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77212918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-12DOI: 10.11648/J.IJMSA.20190801.11
V. Novikov, M. Levin, Vyacheslav Pevgov, V. Ulyanov
The experimental results analysis of a metals property changes under vacancy-cluster structure effects are shown. Two technological approaches of such structures obtaining are considered. The first is a nanopowders compaction under high (up to 5GPa) hydrostatic compression, on example of a Ni nanopowder (70nm). The second is the Al and Pb crystallization under the high-intensity plastic deformation [e¢ = (102-104) sec-1] (НIPD) conditions on the "solid-liquid" boundary in the centrifugal casting machine with rotary speed up to 2000 rpm. Using the method of atomic force microscopy (AFM), vacancy cluster tubes (VCT) with average diameters of 39 nm for Al and 25 nm for Pb have been detected in the crystallized volume of Al and Pb metals. Discussed the physical model of a new substructure formation within the metals in the form of vacancy cluster tubes, obtained in the process of high-intensive plastic deformation (HIPD) during the process of mass crystallization of Al and Pb and the changes in the mechanical, magnetic and superconducting properties of the above metals, which followed this process. During Al and Pb crystallization under high-intensive plastic deformation (HIPD) range about [e′ = (102–104) sec-1] with specially selected modes of metals crystallization in high-speed centrifugal casting machine the special conditions are being created to achieve the dimensional effect of dynamic (shifting) re-crystallization. Shifting deformation during centrifugal crystallization caused primarily by a large incline of the temperature field from the periphery (relative to the cold wall of the rotor) to the molten central part of the rotor. The difference in the angular velocities of the already-frozen part of the metal (adjacent to the outer surface of the rotor wall) and the central part, where the metal still remains in the molten state, leads to a high-intensity deformation [e′ = (102–104) sec-1] of the crystallized metal melt solidified phase. Since the grain sizes at the crystallized phase initially comprise around tens of nano-meters (approximately crystal nucleation size), it becomes possible to achieve the dimensional effect of the dynamic re-crystallization of a «nanocrystalline» solidified metal at high shift of strain velocities. The ≪non-equilibrium vacancies≫ formed this way condense into vacancy clusters, which are formed in the centrifugal force field in the form of vacancy-shaped cluster tubes stretched out to the center of rotation of the rotor. The process proceeds under conditions far from the equilibrium in comparison with the usual crystallization of the metal from the melt. Such processes can lead to the formation of highly ordered non-equilibrium statescharacteristic of non-equilibrium open systems. Discussed the physical model of a metals vacancy-cluster structures formation at high hydrostatic nanopowders compression (up to 5 GPa) and high-intensity plastic deformation (HIPD) at the stage of Al and Pb alloys mass crystallization
{"title":"Metals Property Changes Under Effect of Vacancy-Cluster Structures","authors":"V. Novikov, M. Levin, Vyacheslav Pevgov, V. Ulyanov","doi":"10.11648/J.IJMSA.20190801.11","DOIUrl":"https://doi.org/10.11648/J.IJMSA.20190801.11","url":null,"abstract":"The experimental results analysis of a metals property changes under vacancy-cluster structure effects are shown. Two technological approaches of such structures obtaining are considered. The first is a nanopowders compaction under high (up to 5GPa) hydrostatic compression, on example of a Ni nanopowder (70nm). The second is the Al and Pb crystallization under the high-intensity plastic deformation [e¢ = (102-104) sec-1] (НIPD) conditions on the \"solid-liquid\" boundary in the centrifugal casting machine with rotary speed up to 2000 rpm. Using the method of atomic force microscopy (AFM), vacancy cluster tubes (VCT) with average diameters of 39 nm for Al and 25 nm for Pb have been detected in the crystallized volume of Al and Pb metals. Discussed the physical model of a new substructure formation within the metals in the form of vacancy cluster tubes, obtained in the process of high-intensive plastic deformation (HIPD) during the process of mass crystallization of Al and Pb and the changes in the mechanical, magnetic and superconducting properties of the above metals, which followed this process. During Al and Pb crystallization under high-intensive plastic deformation (HIPD) range about [e′ = (102–104) sec-1] with specially selected modes of metals crystallization in high-speed centrifugal casting machine the special conditions are being created to achieve the dimensional effect of dynamic (shifting) re-crystallization. Shifting deformation during centrifugal crystallization caused primarily by a large incline of the temperature field from the periphery (relative to the cold wall of the rotor) to the molten central part of the rotor. The difference in the angular velocities of the already-frozen part of the metal (adjacent to the outer surface of the rotor wall) and the central part, where the metal still remains in the molten state, leads to a high-intensity deformation [e′ = (102–104) sec-1] of the crystallized metal melt solidified phase. Since the grain sizes at the crystallized phase initially comprise around tens of nano-meters (approximately crystal nucleation size), it becomes possible to achieve the dimensional effect of the dynamic re-crystallization of a «nanocrystalline» solidified metal at high shift of strain velocities. The ≪non-equilibrium vacancies≫ formed this way condense into vacancy clusters, which are formed in the centrifugal force field in the form of vacancy-shaped cluster tubes stretched out to the center of rotation of the rotor. The process proceeds under conditions far from the equilibrium in comparison with the usual crystallization of the metal from the melt. Such processes can lead to the formation of highly ordered non-equilibrium statescharacteristic of non-equilibrium open systems. Discussed the physical model of a metals vacancy-cluster structures formation at high hydrostatic nanopowders compression (up to 5 GPa) and high-intensity plastic deformation (HIPD) at the stage of Al and Pb alloys mass crystallization","PeriodicalId":14116,"journal":{"name":"International Journal of Materials Science and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89101390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The intermetallic compound layers in solder bumps have the brittle feature and can easily fracture under thermal or mechanical loading. Therefore, the intermetallic compound is an issue for the fracture reliability of the solder bumps. In this work, the intermetallic compound growth before and after high temperature storage tests was investigated. The experiment results revealed that the solder bumps with nickel layers could reduce the intermetallic compound growth rate. The nickel layer, which was added in between Cu and SnAg for top solder bumps, was an important factor controlling the intermetallic compound thickness. It was hard to tell the intermetallic compound thickness at time zero; at the time of 147 hours, the intermetallic compound grew to 3.25 µm; at the time of 294 hours, the intermetallic compound grew to 5.25 µm. However, the solder joints were still in good condition.
{"title":"A Study of the Intermetallic Compound Growth in Flip-Chip Packages under Thermal Loading","authors":"C. Xu, Z. Zhong, W. Choi","doi":"10.32732/JMA.2019.8.1.1","DOIUrl":"https://doi.org/10.32732/JMA.2019.8.1.1","url":null,"abstract":" The intermetallic compound layers in solder bumps have the brittle feature and can easily fracture under thermal or mechanical loading. Therefore, the intermetallic compound is an issue for the fracture reliability of the solder bumps. In this work, the intermetallic compound growth before and after high temperature storage tests was investigated. The experiment results revealed that the solder bumps with nickel layers could reduce the intermetallic compound growth rate. The nickel layer, which was added in between Cu and SnAg for top solder bumps, was an important factor controlling the intermetallic compound thickness. It was hard to tell the intermetallic compound thickness at time zero; at the time of 147 hours, the intermetallic compound grew to 3.25 µm; at the time of 294 hours, the intermetallic compound grew to 5.25 µm. However, the solder joints were still in good condition.","PeriodicalId":14116,"journal":{"name":"International Journal of Materials Science and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82888344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Reddy, S. Nithiyanantham, G. Geetha, R. Sujatha, S. Mahalakshmi
Tin dioxide nanoparticles (SnO2) were synthesized by a sol-gel method. And tin tetra chloride (SnCl4) and ammonium hydroxide (NH4OH) were used as the precursor. NH4OH maintain the homogeneity and stoichiometry of solution through pH. The obtained powder subjected to calcination about 110oC. The obtained samples are characterized by X-ray diffraction, Scanning electron microscope, Fourier transform infrared spectroscope and UV-Visible spectroscopy. From the characterizations it is confirmed that the tetragonal structure and the particles are small and nanosizes, The O-H stretching and C=C bending stretching with chemical compositions are analyzed. The improved conduction properties through lower bandgap and the results are further interpreted and discussed.
{"title":"Study of Structural and Optical Properties of Fe2+ Doped Tin Oxide Nanoparticles","authors":"K. Reddy, S. Nithiyanantham, G. Geetha, R. Sujatha, S. Mahalakshmi","doi":"10.32732/JMA.2019.8.1.8","DOIUrl":"https://doi.org/10.32732/JMA.2019.8.1.8","url":null,"abstract":"Tin dioxide nanoparticles (SnO2) were synthesized by a sol-gel method. And tin tetra chloride (SnCl4) and ammonium hydroxide (NH4OH) were used as the precursor. NH4OH maintain the homogeneity and stoichiometry of solution through pH. The obtained powder subjected to calcination about 110oC. The obtained samples are characterized by X-ray diffraction, Scanning electron microscope, Fourier transform infrared spectroscope and UV-Visible spectroscopy. From the characterizations it is confirmed that the tetragonal structure and the particles are small and nanosizes, The O-H stretching and C=C bending stretching with chemical compositions are analyzed. The improved conduction properties through lower bandgap and the results are further interpreted and discussed.","PeriodicalId":14116,"journal":{"name":"International Journal of Materials Science and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89650970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-15DOI: 10.32732/JMA.2019.8.1.13
Md. Muztahidul Islam, Md. Mohaiminul Islam, Youshuf C. Shimul, Azizur B. Rahman, A. Ruhe, M. Hassan, M. B. Hossain
This article illustrates a design and finite difference time domain (FDTD) method based on analysis of fiber optic surface plasmon resonance (SPR) biosensor for biomedical application especially for DNA-DNA hybridization. The fiber cladding at the middle portion is constructed with the proposed hybrid of gold (Au), graphene, and a sensing medium. This sensor can be recognized adsorption of DNA biomolecules onto sensing medium of PBS saline using attenuated total reflection (ATR) technique. The refractive index (RI) is varied owing to the adsorption of different concentration of biomolecules. Result states that the sensitivity with a monolayer of graphene will be improved up to 40% than bare graphene layer. Owing to increased adsorption capability of DNA molecules on graphene, sensitivity increases compared to the conventional gold thin film SPR biosensor. Numerical analysis shows that the variation of the SPR angle for mismatched DNA strands is quite negligible, whereas that for complementary DNA strands is considerable, which is essential for proper detection of DNA hybridization. Finally, the effect of Electric field distribution on inserting graphene layer is analyzed incorporating the FDTD technique by using Lumerical FDTD solution software.
{"title":"FDTD Analysis Fiber Optic SPR Biosensor for DNA Hybridization: A Numerical Demonstration with Graphene","authors":"Md. Muztahidul Islam, Md. Mohaiminul Islam, Youshuf C. Shimul, Azizur B. Rahman, A. Ruhe, M. Hassan, M. B. Hossain","doi":"10.32732/JMA.2019.8.1.13","DOIUrl":"https://doi.org/10.32732/JMA.2019.8.1.13","url":null,"abstract":"This article illustrates a design and finite difference time domain (FDTD) method based on analysis of fiber optic surface plasmon resonance (SPR) biosensor for biomedical application especially for DNA-DNA hybridization. The fiber cladding at the middle portion is constructed with the proposed hybrid of gold (Au), graphene, and a sensing medium. This sensor can be recognized adsorption of DNA biomolecules onto sensing medium of PBS saline using attenuated total reflection (ATR) technique. The refractive index (RI) is varied owing to the adsorption of different concentration of biomolecules. Result states that the sensitivity with a monolayer of graphene will be improved up to 40% than bare graphene layer. Owing to increased adsorption capability of DNA molecules on graphene, sensitivity increases compared to the conventional gold thin film SPR biosensor. Numerical analysis shows that the variation of the SPR angle for mismatched DNA strands is quite negligible, whereas that for complementary DNA strands is considerable, which is essential for proper detection of DNA hybridization. Finally, the effect of Electric field distribution on inserting graphene layer is analyzed incorporating the FDTD technique by using Lumerical FDTD solution software.","PeriodicalId":14116,"journal":{"name":"International Journal of Materials Science and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87944519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-15DOI: 10.32732/JMA.2019.8.1.20
A. A. Karpenko, A. Drozdov
The article describes a method of creating a three-dimensional organosilicon composite material based on the glass sponge spicules through a combination of soft etching and controlled mechanical action, non-destroying spicules. When in an alkaline medium, the material of the spicules’ outer concentric layers is dissolved and silica passes into solution. After 20 to 30 days in alkaline medium, the silica is in excess and precipitates on organic components, forming a network of 300–500-nm thick organosilicon trabeculae, by which the spicules are fused into a single structure. The resulting composite material contains a mineral component of silica and an organic component. The results indicate that the natural organosilicon material can be reformed as a result of self-assembly into three-dimensional or flat structures.
{"title":"Skeletons of Glass Sponges as a Substrate for Creating Functional Composite Organosilicon Materials","authors":"A. A. Karpenko, A. Drozdov","doi":"10.32732/JMA.2019.8.1.20","DOIUrl":"https://doi.org/10.32732/JMA.2019.8.1.20","url":null,"abstract":"The article describes a method of creating a three-dimensional organosilicon composite material based on the glass sponge spicules through a combination of soft etching and controlled mechanical action, non-destroying spicules. When in an alkaline medium, the material of the spicules’ outer concentric layers is dissolved and silica passes into solution. After 20 to 30 days in alkaline medium, the silica is in excess and precipitates on organic components, forming a network of 300–500-nm thick organosilicon trabeculae, by which the spicules are fused into a single structure. The resulting composite material contains a mineral component of silica and an organic component. The results indicate that the natural organosilicon material can be reformed as a result of self-assembly into three-dimensional or flat structures.","PeriodicalId":14116,"journal":{"name":"International Journal of Materials Science and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73567127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-15DOI: 10.32732/JMA.2019.8.1.34
N. Spinella, C. Galati, L. Renna
Controlled layering of functional material can produced a versatile film with specific chemical and physical proprieties for desirable applications. This article presented inkjet multilayer structures of ZnO nanoparticles of specific layer morphology and thickness for the development of devices where a high surface-to-volume ratio is required (e.g. micro gas sensors). Stacked multilayers were stratified through a multi-run printing process suitable to produce large-square pattern on flat silicon support. The formation of a multilayer structure was demonstrate through an extended structural characterization of the resulting film. Printed layer morphology was investigated with optical and scanning electron microscopies; atomic force microscopy profiling characterizations were conducted over the entire printed area to evaluate the pattern reproducibility. Finally, a preliminary study as gas sensing film was performed, using the alcohol/ZnO interaction experiments.
{"title":"Inkjet Printing of Controlled ZnO Nanoparticles Layering","authors":"N. Spinella, C. Galati, L. Renna","doi":"10.32732/JMA.2019.8.1.34","DOIUrl":"https://doi.org/10.32732/JMA.2019.8.1.34","url":null,"abstract":" Controlled layering of functional material can produced a versatile film with specific chemical and physical proprieties for desirable applications. This article presented inkjet multilayer structures of ZnO nanoparticles of specific layer morphology and thickness for the development of devices where a high surface-to-volume ratio is required (e.g. micro gas sensors). Stacked multilayers were stratified through a multi-run printing process suitable to produce large-square pattern on flat silicon support. The formation of a multilayer structure was demonstrate through an extended structural characterization of the resulting film. Printed layer morphology was investigated with optical and scanning electron microscopies; atomic force microscopy profiling characterizations were conducted over the entire printed area to evaluate the pattern reproducibility. Finally, a preliminary study as gas sensing film was performed, using the alcohol/ZnO interaction experiments.","PeriodicalId":14116,"journal":{"name":"International Journal of Materials Science and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88573421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-15DOI: 10.32732/JMA.2019.8.1.28
M. Jafarov, E. Nasirov, S. Jahangirova, R. Mammadov
Nanostructure CZTS thin film was fabricated by electrodeposition technique. To manufacture the heterojunctions, p-type c-Si wafers of (100) orientation were used as a substrate. Before anodization, the surface of the c-Si substrates were etched in an aqueous solution of HF and further washed in distilled water (at temperature of 80°С and ethyl alcohol and then dried in air. The current-voltage characteristics of the CZTS /PS solar cell under dark conditions show that forward bias current variation approximately exponentially with voltage bias. The capacitance for Nano- CZTS /PS Solar Cell decreases with the increase of the reverse bias voltage and with the increasing of etching time of nPS layers. That heterojunctions demonstrate good photo-response in the wavelength range of 510 - 650 nm.
{"title":"Nanostructured Cu2ZnSnS4 Thin Films on Porous-Si Wafer","authors":"M. Jafarov, E. Nasirov, S. Jahangirova, R. Mammadov","doi":"10.32732/JMA.2019.8.1.28","DOIUrl":"https://doi.org/10.32732/JMA.2019.8.1.28","url":null,"abstract":" Nanostructure CZTS thin film was fabricated by electrodeposition technique. To manufacture the heterojunctions, p-type c-Si wafers of (100) orientation were used as a substrate. Before anodization, the surface of the c-Si substrates were etched in an aqueous solution of HF and further washed in distilled water (at temperature of 80°С and ethyl alcohol and then dried in air. The current-voltage characteristics of the CZTS /PS solar cell under dark conditions show that forward bias current variation approximately exponentially with voltage bias. The capacitance for Nano- CZTS /PS Solar Cell decreases with the increase of the reverse bias voltage and with the increasing of etching time of nPS layers. That heterojunctions demonstrate good photo-response in the wavelength range of 510 - 650 nm.","PeriodicalId":14116,"journal":{"name":"International Journal of Materials Science and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75546108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-15DOI: 10.32732/JMA.2019.8.1.41
A. Sedky, A. T. AlMotasem
We report here the fluctuation induced excess conductivity and IR spectra in Bi2Sr2Ca1-xYxCu2Oy (0.00 < x < 0.50) superconductors. This work is done by using the reported data of Sedky, Physica B 410, 227 (2013), and with the help of Anderson and Zou relation. The logarithmic plots of excess conductivity ∆σ and reduced temperature Є reveal two different exponents corresponding to unique crossover temperature in the slope of each plot. The first exponent is obtained in the normal field region at a temperature of ( << T < 2 ), while the second exponent is obtained in the mean field region at a temperature of (T ~ ). The dimensional exponents are shifted from three dimensional (3D) to two dimensional (2D) for x < 0.30, but it is shifted from 2D to 3D for x = 0.50. Both zero kelvin critical magnetic fields and current density are considerably enhanced by increasing x up to 0.30 followed by a decrease with further increase of x up to 0.50. The vice is versa for the behavior of interlayer coupling, coherence lengths and anisotropy against x. On the other hand, IR spectra show absorption modes in the wave number range of 716-726 cm-1 according to the value of x. These results are discussed in terms of the correlation between carrier concentration, oxygen deficient and effective Cu valance which are induced by Y through CuO2 planes of BSCCO superconductors.
本文报道了Bi2Sr2Ca1-xYxCu2Oy (0.00 < x < 0.50)超导体中波动诱导的超导电性和红外光谱。本研究采用Sedky, Physica B 410, 227(2013)的报告数据，并借助于Anderson and Zou关系。过量电导率∆σ和还原温度Є的对数图显示了两个不同的指数，对应于每个图斜率上唯一的交叉温度。第一个指数在温度为(<< T < 2)的法场区域得到，第二个指数在温度为(T ~)的平均场区域得到。当x < 0.30时，维度指数从三维(3D)移动到二维(2D)，但当x = 0.50时，维度指数从二维移动到三维。当x增加到0.30时，零开尔文临界磁场和电流密度都显著增强，然后随着x进一步增加到0.50而减小。另一方面，根据x的值，红外光谱显示出716-726 cm-1波数范围内的吸收模式。这些结果根据Y通过BSCCO超导体的CuO2面诱导的载流子浓度、氧缺乏和有效Cu价之间的相关性进行了讨论。
{"title":"Fluctuation-Induced Excess Conductivity and Infrared Spectra in Y Doped BSCCO Superconductors","authors":"A. Sedky, A. T. AlMotasem","doi":"10.32732/JMA.2019.8.1.41","DOIUrl":"https://doi.org/10.32732/JMA.2019.8.1.41","url":null,"abstract":"We report here the fluctuation induced excess conductivity and IR spectra in Bi2Sr2Ca1-xYxCu2Oy (0.00 < x < 0.50) superconductors. This work is done by using the reported data of Sedky, Physica B 410, 227 (2013), and with the help of Anderson and Zou relation. The logarithmic plots of excess conductivity ∆σ and reduced temperature Є reveal two different exponents corresponding to unique crossover temperature in the slope of each plot. The first exponent is obtained in the normal field region at a temperature of ( << T < 2 ), while the second exponent is obtained in the mean field region at a temperature of (T ~ ). The dimensional exponents are shifted from three dimensional (3D) to two dimensional (2D) for x < 0.30, but it is shifted from 2D to 3D for x = 0.50. Both zero kelvin critical magnetic fields and current density are considerably enhanced by increasing x up to 0.30 followed by a decrease with further increase of x up to 0.50. The vice is versa for the behavior of interlayer coupling, coherence lengths and anisotropy against x. On the other hand, IR spectra show absorption modes in the wave number range of 716-726 cm-1 according to the value of x. These results are discussed in terms of the correlation between carrier concentration, oxygen deficient and effective Cu valance which are induced by Y through CuO2 planes of BSCCO superconductors.","PeriodicalId":14116,"journal":{"name":"International Journal of Materials Science and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82966914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-01-23DOI: 10.11648/J.IJMSA.20180706.11
Md. Ziaul Ahsan, M. F. A. Khan, M. Islam
This paper reports on the electromagnetic properties of manganese doped cobalt ferrite nanoparticles, synthesized via solid state reaction route using the planetary ball milling technique at different milling time (8h and 12h)in order to tune the material for applications in high frequency as well as microwave devices. The XRD patterns show the cubic spinel structure of the material. The lattice constant along with other associated structural parameters are found to increase but the particle size to decrease with the milling time. The positive value of real part of permeability is found to increase with the increase of frequency for the sample of milling time 8h. But for the sample of milling time 12h, its negative value is observed below 2 kHz and after onwards it becomes positive. This negative value of real part is the signature of diamagnetic behavior at the low frequency regime, which is assumed to originate due to the dominance of antiferromagnetic effect of Mn2+ ions on the B site. The diamagnetic behavior may make this material suitable to be used in electromagnetic suppression or shielding devices. The real part e' of permittivity demonstrates the normal behavior for both the sample of milling time 8h and 12h below 2 kHz and 0.1 MHz respectively. The peaks at 8MHz for the sample of milling time 8h and at 1MHz for the sample of milling time 12h in the dispersion of its imaginary part e'' indicate the resonance condition for the respective sample at the higher frequency regime, which is assumed to be originated from the faster hoping of electrons between Fe2+ and Fe3+ in the B site. At the low frequency regime, the a.c resistivity decreases almost exponentially with the increase of frequency to a certain minimum value at 10 kHz and 1 kHz for the samples of milling time 8h and 12h respectively and after onwards it becomes almost independent of frequency. The structural correlation is analyzed with the Col-Cole plot where the single incomplete semicircle corresponds to the grain boundary resistance for 12h milled sample and double incomplete semicircles to both the grain boundary and grain resistances for 8h milled sample. Almost constant characteristic impedance implies that both the permeability and permittivity are of equal value for the sample of milling time 12h and its nearer-to-zero value of eddy current loss may make this material suitable to be used in the design of microstrip/patch antenna. However the linear variation of characteristic impedance with the frequency for the sample of milling time 8h implies the tuning effect of multilayer capacitance, which may make this sample to be integrated as tuner with the microstrip/patch antenna.
{"title":"Influence of Milling Time on Structural and Electromagnetic Properties of Manganese Doped Cobalt Ferrite Nanoparticles","authors":"Md. Ziaul Ahsan, M. F. A. Khan, M. Islam","doi":"10.11648/J.IJMSA.20180706.11","DOIUrl":"https://doi.org/10.11648/J.IJMSA.20180706.11","url":null,"abstract":"This paper reports on the electromagnetic properties of manganese doped cobalt ferrite nanoparticles, synthesized via solid state reaction route using the planetary ball milling technique at different milling time (8h and 12h)in order to tune the material for applications in high frequency as well as microwave devices. The XRD patterns show the cubic spinel structure of the material. The lattice constant along with other associated structural parameters are found to increase but the particle size to decrease with the milling time. The positive value of real part of permeability is found to increase with the increase of frequency for the sample of milling time 8h. But for the sample of milling time 12h, its negative value is observed below 2 kHz and after onwards it becomes positive. This negative value of real part is the signature of diamagnetic behavior at the low frequency regime, which is assumed to originate due to the dominance of antiferromagnetic effect of Mn2+ ions on the B site. The diamagnetic behavior may make this material suitable to be used in electromagnetic suppression or shielding devices. The real part e' of permittivity demonstrates the normal behavior for both the sample of milling time 8h and 12h below 2 kHz and 0.1 MHz respectively. The peaks at 8MHz for the sample of milling time 8h and at 1MHz for the sample of milling time 12h in the dispersion of its imaginary part e'' indicate the resonance condition for the respective sample at the higher frequency regime, which is assumed to be originated from the faster hoping of electrons between Fe2+ and Fe3+ in the B site. At the low frequency regime, the a.c resistivity decreases almost exponentially with the increase of frequency to a certain minimum value at 10 kHz and 1 kHz for the samples of milling time 8h and 12h respectively and after onwards it becomes almost independent of frequency. The structural correlation is analyzed with the Col-Cole plot where the single incomplete semicircle corresponds to the grain boundary resistance for 12h milled sample and double incomplete semicircles to both the grain boundary and grain resistances for 8h milled sample. Almost constant characteristic impedance implies that both the permeability and permittivity are of equal value for the sample of milling time 12h and its nearer-to-zero value of eddy current loss may make this material suitable to be used in the design of microstrip/patch antenna. However the linear variation of characteristic impedance with the frequency for the sample of milling time 8h implies the tuning effect of multilayer capacitance, which may make this sample to be integrated as tuner with the microstrip/patch antenna.","PeriodicalId":14116,"journal":{"name":"International Journal of Materials Science and Applications","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73426306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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