Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966740
F. Koval, A. Chvála
This paper describes a proposed methodology for simulation of thermomechanical properties and reliability of power IGBT devices and modules. This paper consists of an analysis of the results and design optimization of modern IGBT modules and devices with commercial simulation software support. In practice, these simulations can replace expensive and protracted experimental works in an effort to improve thermomechanical parameters, reliability and operating life time of these components.
{"title":"Simulation of Thermo Mechanical Properties and Reliability of Power IGBT Module","authors":"F. Koval, A. Chvála","doi":"10.1109/ASDAM55965.2022.9966740","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966740","url":null,"abstract":"This paper describes a proposed methodology for simulation of thermomechanical properties and reliability of power IGBT devices and modules. This paper consists of an analysis of the results and design optimization of modern IGBT modules and devices with commercial simulation software support. In practice, these simulations can replace expensive and protracted experimental works in an effort to improve thermomechanical parameters, reliability and operating life time of these components.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"283 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122954545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966777
J. Huran, A. Skrypnik, V. Dujnič, A. Doroshkevich, B. Zat’ko, M. Nozdrin, E. Kováčová, G. Shirkov
Very thin carbon films were deposited by electron beam-plasma vacuum deposition technique on quartz and sapphire substrates. The concentration of elements was determined by RBS and ERD analytical method simultaneously. Concentrations of elements were practically the same for all samples. Raman spectroscopy and deconvolution of Raman spectra was used for chemical structural features determination of carbon films. Raman spectroscopy results showed that films contained several carbon phases. The photo-induced electron emission characteristics of very thin carbon films on quartz and sapphire substrates as back-side illuminated transmission photocathode are discussed. Best electron emission properties exhibit transmission photocathode with very thin carbon film prepared on sapphire substrate at lower substrate temperature.
{"title":"Electron Beam-plasma Vacuum Deposition of Very Thin Carbon Films: Photocathode Application","authors":"J. Huran, A. Skrypnik, V. Dujnič, A. Doroshkevich, B. Zat’ko, M. Nozdrin, E. Kováčová, G. Shirkov","doi":"10.1109/ASDAM55965.2022.9966777","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966777","url":null,"abstract":"Very thin carbon films were deposited by electron beam-plasma vacuum deposition technique on quartz and sapphire substrates. The concentration of elements was determined by RBS and ERD analytical method simultaneously. Concentrations of elements were practically the same for all samples. Raman spectroscopy and deconvolution of Raman spectra was used for chemical structural features determination of carbon films. Raman spectroscopy results showed that films contained several carbon phases. The photo-induced electron emission characteristics of very thin carbon films on quartz and sapphire substrates as back-side illuminated transmission photocathode are discussed. Best electron emission properties exhibit transmission photocathode with very thin carbon film prepared on sapphire substrate at lower substrate temperature.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125065421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966773
M. Kemény, P. Ondrejka, M. Mikolasek
Incremental capacity analysis (ICA) and Galvanostatic Intermittent Titration Technique (GITT) are commonly used tools of electrical characterisation of degradation of Li-ion batteries. Disadvantage of these methods is their significant time consumption since both of these methods are based on charging/discharging by very low currents (e.g. C/20). In this contribution we propose a novel approach of performing ICA analysis via utilisation of GITT data in order to significantly decrease time of the measurements and/or include ICA analysis into GITT measurements, which would not be otherwise performed.
{"title":"Incremental Capacity Analysis (ICA) Via Galvanostatic Intermittent Titration Technique (GITT) Data For Battery Degradation Study","authors":"M. Kemény, P. Ondrejka, M. Mikolasek","doi":"10.1109/ASDAM55965.2022.9966773","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966773","url":null,"abstract":"Incremental capacity analysis (ICA) and Galvanostatic Intermittent Titration Technique (GITT) are commonly used tools of electrical characterisation of degradation of Li-ion batteries. Disadvantage of these methods is their significant time consumption since both of these methods are based on charging/discharging by very low currents (e.g. C/20). In this contribution we propose a novel approach of performing ICA analysis via utilisation of GITT data in order to significantly decrease time of the measurements and/or include ICA analysis into GITT measurements, which would not be otherwise performed.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"30 25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128791034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966746
V. Režo, M. Hanic, M. Weis
This paper presents the practical solutions for measuring small currents at the characterization of organic field-controlled transistors. It presents the design, PCB layout, and methodology of various small current measurement principles. The design mainly focuses on a trans-impedance amplifier that transforms current into voltage. In this paper, we can also determine the critical parameters for selecting the main components in the measuring part. Also, simulations and measurement of real measured parameters with an evaluation of all critical quantities, such as accuracy, precision, linearity, offset, noise, and response speed.
{"title":"Small currents measurement in organic field-controlled transistors","authors":"V. Režo, M. Hanic, M. Weis","doi":"10.1109/ASDAM55965.2022.9966746","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966746","url":null,"abstract":"This paper presents the practical solutions for measuring small currents at the characterization of organic field-controlled transistors. It presents the design, PCB layout, and methodology of various small current measurement principles. The design mainly focuses on a trans-impedance amplifier that transforms current into voltage. In this paper, we can also determine the critical parameters for selecting the main components in the measuring part. Also, simulations and measurement of real measured parameters with an evaluation of all critical quantities, such as accuracy, precision, linearity, offset, noise, and response speed.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128460521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966779
P. Ondrejka, M. Sojková, V. Kotok, O. Zima, M. Kemény, P. Novák, M. Mikolášck
This paper is dedicated to the fabrication and characterization of NiSx supercapacitor electrodes prepared from Ni-foam by means of a one-zone sulfurization process. The successful preparation of NiSx (x= 1 and 2) was confirmed by scanning electron microscopy (SEM) and X-ray diffractometry (XRD). A specific capacitance of 105 mF/cm2 and 510 mF/cm2 was achieved on electrodes prepared at 400°C and 250 °C, respectively. Anodic and cathodic peaks indicate the pseudo-capacitive character of the charge storage mechanism for both samples prepared at different sulfurization temperature. It is proposed that the 4.9 times higher capacitance of sample prepared at 250°C is associated with a higher density of nickel sulfide nanoflakes in the structure.
{"title":"Sulfurization of Ni-foam as a binder-free supercapacitor electrode","authors":"P. Ondrejka, M. Sojková, V. Kotok, O. Zima, M. Kemény, P. Novák, M. Mikolášck","doi":"10.1109/ASDAM55965.2022.9966779","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966779","url":null,"abstract":"This paper is dedicated to the fabrication and characterization of NiSx supercapacitor electrodes prepared from Ni-foam by means of a one-zone sulfurization process. The successful preparation of NiSx (x= 1 and 2) was confirmed by scanning electron microscopy (SEM) and X-ray diffractometry (XRD). A specific capacitance of 105 mF/cm2 and 510 mF/cm2 was achieved on electrodes prepared at 400°C and 250 °C, respectively. Anodic and cathodic peaks indicate the pseudo-capacitive character of the charge storage mechanism for both samples prepared at different sulfurization temperature. It is proposed that the 4.9 times higher capacitance of sample prepared at 250°C is associated with a higher density of nickel sulfide nanoflakes in the structure.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127195373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966766
M. Sobota, O. Kokavec, M. Micjan, M. Novota, M. Weis
In this contribution, we deal with PEDOT: PSS organic electrochemical transistors (OECTs), which pose a perspective device for biosensing applications. We manufactured two transistors with electrolysis prepared Ag/AgCl electrode, and commercial one. Commercial one, reached better current stability, therefore we propose PEDOT: PSS (GOPS) benchmarking according to it. PEDOT: PSS films were prepared by perspective inkjet printing and crosslinked by GOPS. There is still a space for optimization to reach biosensing ready device.
{"title":"Organic electrochemical transistors for biosensing applications","authors":"M. Sobota, O. Kokavec, M. Micjan, M. Novota, M. Weis","doi":"10.1109/ASDAM55965.2022.9966766","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966766","url":null,"abstract":"In this contribution, we deal with PEDOT: PSS organic electrochemical transistors (OECTs), which pose a perspective device for biosensing applications. We manufactured two transistors with electrolysis prepared Ag/AgCl electrode, and commercial one. Commercial one, reached better current stability, therefore we propose PEDOT: PSS (GOPS) benchmarking according to it. PEDOT: PSS films were prepared by perspective inkjet printing and crosslinked by GOPS. There is still a space for optimization to reach biosensing ready device.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122517351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966784
S. P. Saeb, M. Varga
Gallium telluride (GaTe) is a direct bandgap compound semiconductor with the near-IR bandgap energy and unique optical properties. However, the conventional Vapor-Liquid-Solid (VLS) nanowire fabrication method using metal particle seed, is not a feasible way to fabricate optoelectronic devices due to the negative effect of metal particles presence on the optical properties of nanowires. In this work, GaTe nanowires were fabricated by the VLS method via a self-catalytic growth mechanism on silicon substrate without the use of metal particles. This procedure not only simplifíed the growth process, but also had no adverse effect on nanowires' optical properties. SEM, EDS, Raman and photoluminescence spectroscopies were used to characterize the morphological, elemental, crystal and optical properties. Morphological analysis showed numerous long narrow nanowires. EDS analysis revealed Ga and Te as dominant components. Raman and photoluminescence spectroscopies showed peaks attributed to GaTe and its bandgap, confirming their acceptable optical properties and potential for optoelectronic applications.
{"title":"Investigation of metal particle-free gallium telluride nanowire growth using conventional CVD method","authors":"S. P. Saeb, M. Varga","doi":"10.1109/ASDAM55965.2022.9966784","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966784","url":null,"abstract":"Gallium telluride (GaTe) is a direct bandgap compound semiconductor with the near-IR bandgap energy and unique optical properties. However, the conventional Vapor-Liquid-Solid (VLS) nanowire fabrication method using metal particle seed, is not a feasible way to fabricate optoelectronic devices due to the negative effect of metal particles presence on the optical properties of nanowires. In this work, GaTe nanowires were fabricated by the VLS method via a self-catalytic growth mechanism on silicon substrate without the use of metal particles. This procedure not only simplifíed the growth process, but also had no adverse effect on nanowires' optical properties. SEM, EDS, Raman and photoluminescence spectroscopies were used to characterize the morphological, elemental, crystal and optical properties. Morphological analysis showed numerous long narrow nanowires. EDS analysis revealed Ga and Te as dominant components. Raman and photoluminescence spectroscopies showed peaks attributed to GaTe and its bandgap, confirming their acceptable optical properties and potential for optoelectronic applications.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122524144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966757
E. Vavrinsky, M. Polak, M. Stremy, D. Proks, M. Kopani, T. Závodník, K. Gasparek, D. Vitazkova, H. Kosnacova
We used 3 approaches to measure muscle activity: electromyography (EMG), mechanomyography (MMG) and electroimpedance myography (EIM). In our work, we compared individual methods and the trends recorded by them. The use of only one Holter device, which simultaneously measured all the measurements performed, was unique. Thanks to this, we achieved original results, because we did not find another report where one device was used for simultaneous measurement of EMG, MMG and EIM.
{"title":"Simultaneous electro / mechano / impedance myographic measurement of muscle activity","authors":"E. Vavrinsky, M. Polak, M. Stremy, D. Proks, M. Kopani, T. Závodník, K. Gasparek, D. Vitazkova, H. Kosnacova","doi":"10.1109/ASDAM55965.2022.9966757","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966757","url":null,"abstract":"We used 3 approaches to measure muscle activity: electromyography (EMG), mechanomyography (MMG) and electroimpedance myography (EIM). In our work, we compared individual methods and the trends recorded by them. The use of only one Holter device, which simultaneously measured all the measurements performed, was unique. Thanks to this, we achieved original results, because we did not find another report where one device was used for simultaneous measurement of EMG, MMG and EIM.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121033079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966783
J. Kozarik, K. Gasparek, T. Závodník, L. Cernaj, M. Jagelka, M. Donoval
In recent years, the rise of the Internet of things and inexpensive sensors enabled the introduction of low-cost devices for high-density urban air quality monitoring. These are commonly manufactured as closed systems without support for third-party sensors. This paper proposes a universal platform for wireless data transfer, power management, remote configuration, and physical mounting of environmental sensors. The platform consists of a master module with a basic set of sensors, which performs control and communication, and slots for additional modules. The device can utilize alternative power sources. Design of the device is described with emphasis on the platform versatility, accurate temperature measurement, additional modules for measurement of particulate matter, solar irradiation, and noise level. Preliminary results of deployment of 7 devices in urban conditions are presented. Long-term operation tests indicate high reliability of power management and network communication, mechanical and weather resistance.
{"title":"Multi-Sensor Modular IoT Platform for High-Density Monitoring of Environmental Parameters","authors":"J. Kozarik, K. Gasparek, T. Závodník, L. Cernaj, M. Jagelka, M. Donoval","doi":"10.1109/ASDAM55965.2022.9966783","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966783","url":null,"abstract":"In recent years, the rise of the Internet of things and inexpensive sensors enabled the introduction of low-cost devices for high-density urban air quality monitoring. These are commonly manufactured as closed systems without support for third-party sensors. This paper proposes a universal platform for wireless data transfer, power management, remote configuration, and physical mounting of environmental sensors. The platform consists of a master module with a basic set of sensors, which performs control and communication, and slots for additional modules. The device can utilize alternative power sources. Design of the device is described with emphasis on the platform versatility, accurate temperature measurement, additional modules for measurement of particulate matter, solar irradiation, and noise level. Preliminary results of deployment of 7 devices in urban conditions are presented. Long-term operation tests indicate high reliability of power management and network communication, mechanical and weather resistance.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126437950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966799
R. Schaller, F. Maier, R. Mandl
In this paper, the results of Thermally Stimulated Depolarization Currents (TSDC)-measurements of a complex system of stacked dielectric layers, like typically appearing in semiconductor packages, is presented. Characteristics of the individual isolation layers are presented solely and the results are compared to the stack. The investigated layers are comprising polyimide film, alkali-free glass, polyolefin film and epoxy based mold compound. Measurements have been carried out in the temperature range from 19 - 195°C at varying polarization fields for every material. Various relaxation peaks, originated by different polarization mechanisms within the materials could be observed. A comparison between the TSDC-peaks of the layer stack and the individual materials is shown. Our results demonstrate, that the super positioned spectrum is getting dominated by a single portion, the mold compound.
{"title":"Thermally stimulated depolarization current - characterization of a multi-layer dielectric stack for semiconductor packages","authors":"R. Schaller, F. Maier, R. Mandl","doi":"10.1109/ASDAM55965.2022.9966799","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966799","url":null,"abstract":"In this paper, the results of Thermally Stimulated Depolarization Currents (TSDC)-measurements of a complex system of stacked dielectric layers, like typically appearing in semiconductor packages, is presented. Characteristics of the individual isolation layers are presented solely and the results are compared to the stack. The investigated layers are comprising polyimide film, alkali-free glass, polyolefin film and epoxy based mold compound. Measurements have been carried out in the temperature range from 19 - 195°C at varying polarization fields for every material. Various relaxation peaks, originated by different polarization mechanisms within the materials could be observed. A comparison between the TSDC-peaks of the layer stack and the individual materials is shown. Our results demonstrate, that the super positioned spectrum is getting dominated by a single portion, the mold compound.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114857063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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