Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966753
T. Závodník, L. Cernaj, K. Gasparek, M. Micjan, M. Donoval
In this paper we describe a low-power IoT wearable biometric authentication device that uses PPG (photoplethysmography) data to create a biometric authentication system. We describe the challenges that are involved in measurement of PPG signals, processing and classification on an embedded device while using the lowest amount of energy possible to maximize battery life.
{"title":"Biometric identification using shoulder-based PPG sensor","authors":"T. Závodník, L. Cernaj, K. Gasparek, M. Micjan, M. Donoval","doi":"10.1109/ASDAM55965.2022.9966753","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966753","url":null,"abstract":"In this paper we describe a low-power IoT wearable biometric authentication device that uses PPG (photoplethysmography) data to create a biometric authentication system. We describe the challenges that are involved in measurement of PPG signals, processing and classification on an embedded device while using the lowest amount of energy possible to maximize battery life.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114427149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966780
K. Pressel, Josef Moser
Major trend in Microelectronics is the move towards higher system integration driving increasing compactness and complexity and all at acceptable cost. This paper presents an overview on selected results from the ECSEL JU project iRel40 which has the ultimate goal of improving reliability of electronic components and systems by reducing failure rates along the entire value chain. We first present an aspect for development, where digital twins are applied to develop and design an optimum assembly and packaging. Then we highlight that preassembly, intelligent data handling applied in production, and the importance of material and testing knowhow have impact to improve reliability.
{"title":"Reliability along the Value Chain – from Chip to Board/System","authors":"K. Pressel, Josef Moser","doi":"10.1109/ASDAM55965.2022.9966780","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966780","url":null,"abstract":"Major trend in Microelectronics is the move towards higher system integration driving increasing compactness and complexity and all at acceptable cost. This paper presents an overview on selected results from the ECSEL JU project iRel40 which has the ultimate goal of improving reliability of electronic components and systems by reducing failure rates along the entire value chain. We first present an aspect for development, where digital twins are applied to develop and design an optimum assembly and packaging. Then we highlight that preassembly, intelligent data handling applied in production, and the importance of material and testing knowhow have impact to improve reliability.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117249698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966741
D. Pudiš, T. Mizera, P. Gašo, A. Kuzma, M. Ziman, S. Serečunová, D. Seyringer, M. Goraus
In this paper, we document optical splitters based on Y-branch and also on MMI splitting principle. The 1×4 Y-branch splitter was prepared in 3D geometry fully from polymer approaching the single mode transmission at 1550 nm. We also prepared new concept of 1×4 MMI optical splitter. Their optical properties and character of output optical field were measured by near-field scanning optical microscope. Splitting properties and optical outputs of both splitters are very promising and increase an attractiveness of presented 3D technology and polymers.
{"title":"3D optical splitters based on polymers","authors":"D. Pudiš, T. Mizera, P. Gašo, A. Kuzma, M. Ziman, S. Serečunová, D. Seyringer, M. Goraus","doi":"10.1109/ASDAM55965.2022.9966741","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966741","url":null,"abstract":"In this paper, we document optical splitters based on Y-branch and also on MMI splitting principle. The 1×4 Y-branch splitter was prepared in 3D geometry fully from polymer approaching the single mode transmission at 1550 nm. We also prepared new concept of 1×4 MMI optical splitter. Their optical properties and character of output optical field were measured by near-field scanning optical microscope. Splitting properties and optical outputs of both splitters are very promising and increase an attractiveness of presented 3D technology and polymers.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129841220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966754
J. Nevrela, V. Rezo, M. Novota, A. Vardzak, M. Weis
This report describes a novel approach to the fabrication of temperature sensors based on poly(3,4-ethylene dioxythiophene)poly(styrene sulfonate) (PEDOT:PSS). The sensor fabrication process was optimized. It utilizes ink-jet printing technology to deposit layers of silver contacts and sensitive PEDOT:PSS layer, which were subsequently passivated. The main advantage of these fully printed sensors is flexibility, low production cost and quick implementation in the IoT network. In order to demonstrate the use of fabricated temperature sensors (principle of operation based on the resistance change of the PEDOT:PSS layer), a sensor platform was designed and developed, which is capable of sending the measured data automatically and in real-time via the IoT network to a web application.
{"title":"Body temperature sensor based on PEDOT:PSS","authors":"J. Nevrela, V. Rezo, M. Novota, A. Vardzak, M. Weis","doi":"10.1109/ASDAM55965.2022.9966754","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966754","url":null,"abstract":"This report describes a novel approach to the fabrication of temperature sensors based on poly(3,4-ethylene dioxythiophene)poly(styrene sulfonate) (PEDOT:PSS). The sensor fabrication process was optimized. It utilizes ink-jet printing technology to deposit layers of silver contacts and sensitive PEDOT:PSS layer, which were subsequently passivated. The main advantage of these fully printed sensors is flexibility, low production cost and quick implementation in the IoT network. In order to demonstrate the use of fabricated temperature sensors (principle of operation based on the resistance change of the PEDOT:PSS layer), a sensor platform was designed and developed, which is capable of sending the measured data automatically and in real-time via the IoT network to a web application.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130414094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966774
Javad Mohammadi Rad, Marek Letavay, M. Bažant, Pavel Tuček
During the last few decades, the development of information and communication technology, Internet of Things (IoT), Big Data and AI has brought several unique tools with extraordinary added value. One can easily see that all these technologies and tools are now available via standard services at home, in cars, in a public life and during the social interconnection with the environment. Machine learning is a technology that computers can learn on their own to create and predict models. Furthermore, deep learning is a field of machine learning using deep neural network theory, using the principle of neural network corresponding to the human brain. Expansion of cities and population growth necessitate utilizing automated video surveillance and computer vision-based analyses for pedestrian and vehicle safety together with the growth of number of cars and traffic infrastructure [1]. All these aspects of modern technology give us several questions. How can we be so sure that all these “smart” algorithms work reliably? In this work, we introduce a case study for predicting an object behaviour with respect to its safety. Predicting trajectory of an object, either being detected or occluded, provides to predict all probable risky situations by exploiting the last seen parameters of the object movement even when it disappears. All the scenes, including potential collision situation, rely on object detection and tracking. One question remains! How can we measure the performance?
{"title":"On Performance Measures During Behavior Detection Algorithms Implementation - Case Study","authors":"Javad Mohammadi Rad, Marek Letavay, M. Bažant, Pavel Tuček","doi":"10.1109/ASDAM55965.2022.9966774","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966774","url":null,"abstract":"During the last few decades, the development of information and communication technology, Internet of Things (IoT), Big Data and AI has brought several unique tools with extraordinary added value. One can easily see that all these technologies and tools are now available via standard services at home, in cars, in a public life and during the social interconnection with the environment. Machine learning is a technology that computers can learn on their own to create and predict models. Furthermore, deep learning is a field of machine learning using deep neural network theory, using the principle of neural network corresponding to the human brain. Expansion of cities and population growth necessitate utilizing automated video surveillance and computer vision-based analyses for pedestrian and vehicle safety together with the growth of number of cars and traffic infrastructure [1]. All these aspects of modern technology give us several questions. How can we be so sure that all these “smart” algorithms work reliably? In this work, we introduce a case study for predicting an object behaviour with respect to its safety. Predicting trajectory of an object, either being detected or occluded, provides to predict all probable risky situations by exploiting the last seen parameters of the object movement even when it disappears. All the scenes, including potential collision situation, rely on object detection and tracking. One question remains! How can we measure the performance?","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124137650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966794
J. Chovan, F. Uherek, M. Tornaška, S. Serečunová, D. Seyringer, H. Seyringer
The paper deals with the optimization of 2x2 optical switch for photonic integrated circuits based on two 2x2 MMI splitters and two phase-modulators. The optical switch was modelled in the RSoftCAD with the simulation tool BeamPROP. The optimization was done to minimise the insertion losses and broaden the spectral band at 1550 nm by using linear tapers in a 2x2 MMI splitter topology. The 2x2 optical switch is a common element for creating more complex 1xN or NxN optical switches in all-optical signal processing.
{"title":"Optimization of 2x2 optical switch based on MMI splitters by using waveguide tapers","authors":"J. Chovan, F. Uherek, M. Tornaška, S. Serečunová, D. Seyringer, H. Seyringer","doi":"10.1109/ASDAM55965.2022.9966794","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966794","url":null,"abstract":"The paper deals with the optimization of 2x2 optical switch for photonic integrated circuits based on two 2x2 MMI splitters and two phase-modulators. The optical switch was modelled in the RSoftCAD with the simulation tool BeamPROP. The optimization was done to minimise the insertion losses and broaden the spectral band at 1550 nm by using linear tapers in a 2x2 MMI splitter topology. The 2x2 optical switch is a common element for creating more complex 1xN or NxN optical switches in all-optical signal processing.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126592758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966798
J. Kozarik, J. Marek, A. Chvála, M. Minárik
The paper presents part of results of double-pulse switching tests and extraction of dynamic on-resistance of packaged normally-off GaN HEMTs. Devices were tested under various switching conditions. Effects of the switching parameters on dynamic on-resistance were analysed and compared. Samples were exposed to repetitive SC stress for several thousand repetitions of switching. Shift of on-resistance due to short-circuit stress was observed, but not of significant magnitude.
{"title":"Effect of Repetitive Short-Circuit Stress on dynRdson of p-GaN HEMT","authors":"J. Kozarik, J. Marek, A. Chvála, M. Minárik","doi":"10.1109/ASDAM55965.2022.9966798","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966798","url":null,"abstract":"The paper presents part of results of double-pulse switching tests and extraction of dynamic on-resistance of packaged normally-off GaN HEMTs. Devices were tested under various switching conditions. Effects of the switching parameters on dynamic on-resistance were analysed and compared. Samples were exposed to repetitive SC stress for several thousand repetitions of switching. Shift of on-resistance due to short-circuit stress was observed, but not of significant magnitude.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129125698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966749
P. Benko, A. Kosa, M. Matúš, W. Dawidowski, D. Radziewicz, B. Ściana, L. Stuchlíková
The influence of annealing temperature on emission and capture processes in GaAsN/GaAs diodes with a nitrogen content of 0.93, 1.51 and 1.81% have been investigated by the Deep Level Transient Fourier Spectroscopy (DLTFS) method. The defects with activation energies 0.48 eV and 0.63 eV were observed and confirmed in each sample's DLTFS spectrum at a temperature of 350 K before and after annealing. The most markable impact of annealing temperature on the defect distribution was observed in the structures with the lowest nitrogen content (0.93%) for temperatures less than 300 K.
{"title":"Influence of Annealing Temperature on Emission and Capture Processes in GaAsN/GaAs Heterostructures","authors":"P. Benko, A. Kosa, M. Matúš, W. Dawidowski, D. Radziewicz, B. Ściana, L. Stuchlíková","doi":"10.1109/ASDAM55965.2022.9966749","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966749","url":null,"abstract":"The influence of annealing temperature on emission and capture processes in GaAsN/GaAs diodes with a nitrogen content of 0.93, 1.51 and 1.81% have been investigated by the Deep Level Transient Fourier Spectroscopy (DLTFS) method. The defects with activation energies 0.48 eV and 0.63 eV were observed and confirmed in each sample's DLTFS spectrum at a temperature of 350 K before and after annealing. The most markable impact of annealing temperature on the defect distribution was observed in the structures with the lowest nitrogen content (0.93%) for temperatures less than 300 K.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132563912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966781
P. Ruterana, M. Chauvat, M. Morales, F. Medjdoub, P. Gamarra, C. Dua, S. Delage
In this work, we have carried out a detailed transmission electron microscopy investigation on ohmic contacts in InAl GaN/GaN high electron mobility transistors consisting of Ti/Al/Ni/Au deposited by evaporation electron beam followed by a rapid thermal annealing at 875°C for 30s under N2 atmosphere. Subsequent to an optimized surface preparation, prior to the metal deposition, it has been possible to systematically obtain a contact resistance of 0.15-0.16 Ω.mm instead of the usual 0.5-0.6 Ω.mm. This is comparable to the state of the art results which have been published subsequent to more complex processes including molecular beam regrowth.
{"title":"Optimized ohmic contacts for InAlGaN/GaN HEMTs","authors":"P. Ruterana, M. Chauvat, M. Morales, F. Medjdoub, P. Gamarra, C. Dua, S. Delage","doi":"10.1109/ASDAM55965.2022.9966781","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966781","url":null,"abstract":"In this work, we have carried out a detailed transmission electron microscopy investigation on ohmic contacts in InAl GaN/GaN high electron mobility transistors consisting of Ti/Al/Ni/Au deposited by evaporation electron beam followed by a rapid thermal annealing at 875°C for 30s under N2 atmosphere. Subsequent to an optimized surface preparation, prior to the metal deposition, it has been possible to systematically obtain a contact resistance of 0.15-0.16 Ω.mm instead of the usual 0.5-0.6 Ω.mm. This is comparable to the state of the art results which have been published subsequent to more complex processes including molecular beam regrowth.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132354462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966785
F. Hrubišák, K. Hušeková, F. Egyenes, A. Rosová, A. Kubranská, E. Dobročka, P. Nádaždy, J. Keshtkar, F. Gucmann, M. Ťapajna
$Ga_{2}O_{3}$ represents a promising semiconductor material for future high-power electronic devices manufacture. However, this material suffers from a low lattice thermal conductivity and advanced thermal management approaches such as heteroepitaxial growth of $Ga_{2}O_{3}$ on substrate with high thermal conductivity, e.g. SiC are needed. Here, we report on growth and structural characterization of monoclinic $beta-Ga_{2}O_{3}$ deposited on semi-insulating 4H-SiC substrates using liquid-injection metal-organic chemical vapor deposition (LI-MOCVD). As deduced form X-ray diffraction and transmission electron microscopy, 120-nm thick phase-pure $beta-Ga_{2}O_{3}$ shows highly-textured granular crystal structure with six mutually rotated orientation variants and root-mean-square surface roughness of 8 nm. We also manufactured depletion-mode MOSFET devices with $Al_{2}O_{3}$ gate dielectric grown by atomic layer deposition method
{"title":"Structural and electrical properties of $text{Ga}_{2}mathrm{O}_{3}$ transistors grown on 4H-SiC substrates","authors":"F. Hrubišák, K. Hušeková, F. Egyenes, A. Rosová, A. Kubranská, E. Dobročka, P. Nádaždy, J. Keshtkar, F. Gucmann, M. Ťapajna","doi":"10.1109/ASDAM55965.2022.9966785","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966785","url":null,"abstract":"$Ga_{2}O_{3}$ represents a promising semiconductor material for future high-power electronic devices manufacture. However, this material suffers from a low lattice thermal conductivity and advanced thermal management approaches such as heteroepitaxial growth of $Ga_{2}O_{3}$ on substrate with high thermal conductivity, e.g. SiC are needed. Here, we report on growth and structural characterization of monoclinic $beta-Ga_{2}O_{3}$ deposited on semi-insulating 4H-SiC substrates using liquid-injection metal-organic chemical vapor deposition (LI-MOCVD). As deduced form X-ray diffraction and transmission electron microscopy, 120-nm thick phase-pure $beta-Ga_{2}O_{3}$ shows highly-textured granular crystal structure with six mutually rotated orientation variants and root-mean-square surface roughness of 8 nm. We also manufactured depletion-mode MOSFET devices with $Al_{2}O_{3}$ gate dielectric grown by atomic layer deposition method","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115920987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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