Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966751
P. Glemba, P. Břečka, Martin Pecho, Roman Hudec
There are a number of security standards for the IT field, and a number of them already specialize in the IoT field. However, the speed of development and the degree of implementation of IoT elements in everyday life is faster than the creation of corresponding security concepts. This becomes an obstacle to the wider implementation of IoT solutions. This particularly affects solutions working with sensitive data. A specific subset is the use of video technologies. As part of the experiment, the authors were looking for the most suitable data security concept that can be used on a wider scale. They proposed the implementation of a concept suitable especially for data security of mobile IoT elements working with sensitive data. These are located in the field and often have a limited ability of physical security.
{"title":"Securing IoT elements in Smart City environments","authors":"P. Glemba, P. Břečka, Martin Pecho, Roman Hudec","doi":"10.1109/ASDAM55965.2022.9966751","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966751","url":null,"abstract":"There are a number of security standards for the IT field, and a number of them already specialize in the IoT field. However, the speed of development and the degree of implementation of IoT elements in everyday life is faster than the creation of corresponding security concepts. This becomes an obstacle to the wider implementation of IoT solutions. This particularly affects solutions working with sensitive data. A specific subset is the use of video technologies. As part of the experiment, the authors were looking for the most suitable data security concept that can be used on a wider scale. They proposed the implementation of a concept suitable especially for data security of mobile IoT elements working with sensitive data. These are located in the field and often have a limited ability of physical security.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131591759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966789
Marek Letavay, M. Bažant, Pavel Tuček, Martin Prokša
Over decades, traffic engineers are focusing on different ways to increase the drivers and pedestrian safety during the daily traffic on the streets. The main reason for that is the growing number of cars, pedestrians, and road density across the whole world [1]. Also, the dramatic increase of computational power, decreasing price of technical equipment enable enrolling object detection topics also in the real time application withing traffic engineering topics. Special focus on mobility topics is not the only one application of this computer technology. It has a broad impact also to many different fields of interests starting from medicine, face-recognition, industry, or art. Three decades of algorithms development, increasing of the computational power led to wide spread of methods and usage. Many important milestones were reached and presented. One should have read the complete evolution, or even browse deeply dedicated pages and forums, but this all can lead to misleading conclusions of usage or performance. This paper should briefly demonstrate and illustrate the implementation of object detection algorithms at a specific, predefined location.
{"title":"SWOT Analysis for Object Detection in Traffic Engineering Based on YOLO Implementation – Case Study","authors":"Marek Letavay, M. Bažant, Pavel Tuček, Martin Prokša","doi":"10.1109/ASDAM55965.2022.9966789","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966789","url":null,"abstract":"Over decades, traffic engineers are focusing on different ways to increase the drivers and pedestrian safety during the daily traffic on the streets. The main reason for that is the growing number of cars, pedestrians, and road density across the whole world [1]. Also, the dramatic increase of computational power, decreasing price of technical equipment enable enrolling object detection topics also in the real time application withing traffic engineering topics. Special focus on mobility topics is not the only one application of this computer technology. It has a broad impact also to many different fields of interests starting from medicine, face-recognition, industry, or art. Three decades of algorithms development, increasing of the computational power led to wide spread of methods and usage. Many important milestones were reached and presented. One should have read the complete evolution, or even browse deeply dedicated pages and forums, but this all can lead to misleading conclusions of usage or performance. This paper should briefly demonstrate and illustrate the implementation of object detection algorithms at a specific, predefined location.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125672570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966745
M. Husák, M. Hasek, V. Janicek, J. Novak, A. Bouřa, J. Foit
The work is focused on the analysis of the thermoelectric generator based on the thermoelectrical effect. The aim idea of the future is to further hybrid integration with semiconductor structures, event. used of nanotechnology. The work is focused on the use of heat of thermally stressed semiconductor structures with subsequent generation of electrical energy, such as GaN semiconductors designed for the automotive industry. The analysis is performed for 4 types of thermoelectric generators (TEG), obtaining energy and storing it in a supercapacitor. The aim was to verify the possibility of using thermoelectric effect, verifying properties using model, determine the essential characteristics, finding the optimum load, output voltage and output power achieved. The operation control of the thermoelectric generator was realized with the circuit LTC3108. We used thermoelectric batteries as a heat energy converter (TEC1-12707, TEC1-071080, TEG-127020 a TEG-127009).
{"title":"Use of Thermally Stressed GaN Semiconductor Structures for Electricity Generation","authors":"M. Husák, M. Hasek, V. Janicek, J. Novak, A. Bouřa, J. Foit","doi":"10.1109/ASDAM55965.2022.9966745","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966745","url":null,"abstract":"The work is focused on the analysis of the thermoelectric generator based on the thermoelectrical effect. The aim idea of the future is to further hybrid integration with semiconductor structures, event. used of nanotechnology. The work is focused on the use of heat of thermally stressed semiconductor structures with subsequent generation of electrical energy, such as GaN semiconductors designed for the automotive industry. The analysis is performed for 4 types of thermoelectric generators (TEG), obtaining energy and storing it in a supercapacitor. The aim was to verify the possibility of using thermoelectric effect, verifying properties using model, determine the essential characteristics, finding the optimum load, output voltage and output power achieved. The operation control of the thermoelectric generator was realized with the circuit LTC3108. We used thermoelectric batteries as a heat energy converter (TEC1-12707, TEC1-071080, TEG-127020 a TEG-127009).","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126324512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966792
M. Mikolasek, M. Kemény, P. Ondrejka, M. Novak
The aim of this paper is to introduce incremental capacity analysis (ICA) as non-destructive electrical technique for degradation analysis and estimation of the state-of-health (SOH) of Lithium-ion batteries. Commercial Li-ion NCA-based batteries were degraded by various stress cycling including High-Current Charging, Over-Charging, and Under-Charging to examine the SOH estimation reliability and accuracy provided by ICA. The advantage of the proposed ICA technique for SOH estimation is compared to impedance spectroscopy.
{"title":"Electrical characterisation techniques for Li-ion battery degradation analysis and state of health estimation","authors":"M. Mikolasek, M. Kemény, P. Ondrejka, M. Novak","doi":"10.1109/ASDAM55965.2022.9966792","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966792","url":null,"abstract":"The aim of this paper is to introduce incremental capacity analysis (ICA) as non-destructive electrical technique for degradation analysis and estimation of the state-of-health (SOH) of Lithium-ion batteries. Commercial Li-ion NCA-based batteries were degraded by various stress cycling including High-Current Charging, Over-Charging, and Under-Charging to examine the SOH estimation reliability and accuracy provided by ICA. The advantage of the proposed ICA technique for SOH estimation is compared to impedance spectroscopy.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124446151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966752
M. Calabretta, A. Sitta, Giuseppe Mauromicale, Francesco Rundo, G. Sequenzia, A. Messina
Silicon carbide (SiC)- based power modules in automotive applications are becoming more and more important in the framework of battery and hybrid vehicles. Consequently, the reliability concerns related to these products must be carefully assessed, considering the harsh environment of automotive applications. The aim of this work is to give some insights into the reliability assessments during the design stage of SiC modules devoted to traction applications, considering different aspects such as power cycle, thermal characterization, and solder joint reliability.
{"title":"The reliability challenge of SiC Power Modules in Automotive Applications","authors":"M. Calabretta, A. Sitta, Giuseppe Mauromicale, Francesco Rundo, G. Sequenzia, A. Messina","doi":"10.1109/ASDAM55965.2022.9966752","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966752","url":null,"abstract":"Silicon carbide (SiC)- based power modules in automotive applications are becoming more and more important in the framework of battery and hybrid vehicles. Consequently, the reliability concerns related to these products must be carefully assessed, considering the harsh environment of automotive applications. The aim of this work is to give some insights into the reliability assessments during the design stage of SiC modules devoted to traction applications, considering different aspects such as power cycle, thermal characterization, and solder joint reliability.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117149062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966767
G. Wachutka
Todays state of the art of predictive high-fidelity computer simulation of “failure and virtual destruction” is illustrated with reference to selected real-life examples as encountered in electrical energy technology. It aims in particular at high-power devices employed in the generation and recovery, the transmission and distribution, and the consumption of electrical power in our modern high-tech societies, which in future have to rely on regenerative energy sources like wind farms and photovoltaics, highly efficient power grids, and environment-friendly trans-portation like electromobility. All this is today supported by realistic computer simulations on the basis of well-calibrated physical device models. The challenge is to make virtual experiments and tests on the computer, which are qualitatively reliable and quantitatively accurate even for device structures that have never been built before, and under operational conditions that very rarely occur as long as the device is kept within the “safe operating area (SOA)”. What we are interested in is to explore the rim of the SOA and even to go beyond it in order to study failure and, eventually, destruction mechanisms with a view to improving robustness and reliability of the devices.
{"title":"Computer-Based Investigations on the Reliability, Robustness, and Failure Mechanisms of High-Power Devices","authors":"G. Wachutka","doi":"10.1109/ASDAM55965.2022.9966767","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966767","url":null,"abstract":"Todays state of the art of predictive high-fidelity computer simulation of “failure and virtual destruction” is illustrated with reference to selected real-life examples as encountered in electrical energy technology. It aims in particular at high-power devices employed in the generation and recovery, the transmission and distribution, and the consumption of electrical power in our modern high-tech societies, which in future have to rely on regenerative energy sources like wind farms and photovoltaics, highly efficient power grids, and environment-friendly trans-portation like electromobility. All this is today supported by realistic computer simulations on the basis of well-calibrated physical device models. The challenge is to make virtual experiments and tests on the computer, which are qualitatively reliable and quantitatively accurate even for device structures that have never been built before, and under operational conditions that very rarely occur as long as the device is kept within the “safe operating area (SOA)”. What we are interested in is to explore the rim of the SOA and even to go beyond it in order to study failure and, eventually, destruction mechanisms with a view to improving robustness and reliability of the devices.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128754782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966756
Andreas Laber, M. Gebser, Konstantin Schekotihin, Yao Yang
Advanced Process Control (APC) systems monitor semiconductor manufacturing processes continuously via equipment internal sensors. The logged data enables data-driven predictive maintenance approaches. Integration of APC-derived constraints into scheduling has the potential to improve the overall equipment effectiveness (OEE). Therefore, we introduce a real-world semiconductor manufacturing case study: Ion Implantation equipment accelerates dopants in an electric field onto wafers, to change electrical properties of defined layers. Every recipe change necessitates ion beam tuning, to meet specifications under varying equipment conditions. In order to avoid expensive timeouts of unsuccessful tuning, a prediction model estimates the tuning success and scheduling is (to be) optimized accordingly. Our preliminary results show that more than half of unsuccessful ion beam tuning can be correctly predicted and thus avoided.
{"title":"Predicting Ion Beam Tuning Success in Semiconductor Manufacturing","authors":"Andreas Laber, M. Gebser, Konstantin Schekotihin, Yao Yang","doi":"10.1109/ASDAM55965.2022.9966756","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966756","url":null,"abstract":"Advanced Process Control (APC) systems monitor semiconductor manufacturing processes continuously via equipment internal sensors. The logged data enables data-driven predictive maintenance approaches. Integration of APC-derived constraints into scheduling has the potential to improve the overall equipment effectiveness (OEE). Therefore, we introduce a real-world semiconductor manufacturing case study: Ion Implantation equipment accelerates dopants in an electric field onto wafers, to change electrical properties of defined layers. Every recipe change necessitates ion beam tuning, to meet specifications under varying equipment conditions. In order to avoid expensive timeouts of unsuccessful tuning, a prediction model estimates the tuning success and scheduling is (to be) optimized accordingly. Our preliminary results show that more than half of unsuccessful ion beam tuning can be correctly predicted and thus avoided.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126709429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966791
L. Stuchlíková, M. Matúš, D. Cincurak, J. Marek, P. Benko, A. Chvála
This paper introduces the results of the Deep Level Transient Fourier Spectroscopy (DLTFS) study of the defects distribution in power double-trench SiC MOSFETs before and after the applied defined electrical stress. Electrical stress significantly changes the distribution of electrically active defects in temperature ranges from 400 to 500 K. The presence of RD1/2, boron impurities, carbon interstitial, Z1/Z2 defect, B and D centre was confirmed. After electrical stress, the most significant defect in the investigated samples was a double defect RD1/2.
{"title":"Study of the defect distribution in power SiC-MOSFET before and after applied electrical stress","authors":"L. Stuchlíková, M. Matúš, D. Cincurak, J. Marek, P. Benko, A. Chvála","doi":"10.1109/ASDAM55965.2022.9966791","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966791","url":null,"abstract":"This paper introduces the results of the Deep Level Transient Fourier Spectroscopy (DLTFS) study of the defects distribution in power double-trench SiC MOSFETs before and after the applied defined electrical stress. Electrical stress significantly changes the distribution of electrically active defects in temperature ranges from 400 to 500 K. The presence of RD1/2, boron impurities, carbon interstitial, Z1/Z2 defect, B and D centre was confirmed. After electrical stress, the most significant defect in the investigated samples was a double defect RD1/2.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126228708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966796
G. Bellomonte, B. Atawa, A. Serghei, N. Michel, Nicolas Delpucch, M. Oualli, Q. Levesque, J. Jacquet, S. Piotrowicz, Emilie Molina, Hermann Sticglaucr, B. Lambert, C. Brylinski, S. L. Delage
In this paper we investigate different polymer coatings to improve robustness in Systems in Packages (SiP) devices for high performance and energy efficient RF-and mm-wave power amplifiers. Cheaper and denser integration of GaN and Si technologies is required. We studied final polymer protection coatings on the semiconductor chip that delay the corrosion phenomenon. Our first results show that BCB seems to be the most efficient protective solution, but there are other materials that could be considered, either for lower dielectric constant or for outstanding electric field handling capability.
{"title":"Polymer Coatings for Better Robustness of GaN-based RF Circuits against Corrosion in SiP","authors":"G. Bellomonte, B. Atawa, A. Serghei, N. Michel, Nicolas Delpucch, M. Oualli, Q. Levesque, J. Jacquet, S. Piotrowicz, Emilie Molina, Hermann Sticglaucr, B. Lambert, C. Brylinski, S. L. Delage","doi":"10.1109/ASDAM55965.2022.9966796","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966796","url":null,"abstract":"In this paper we investigate different polymer coatings to improve robustness in Systems in Packages (SiP) devices for high performance and energy efficient RF-and mm-wave power amplifiers. Cheaper and denser integration of GaN and Si technologies is required. We studied final polymer protection coatings on the semiconductor chip that delay the corrosion phenomenon. Our first results show that BCB seems to be the most efficient protective solution, but there are other materials that could be considered, either for lower dielectric constant or for outstanding electric field handling capability.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114321169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966772
B. Zat’ko, A. Šagátová, J. Osvald, N. Gál, L. Hrubčín, E. Kováčová
In this paper we have aimed at the detectors based on the high-quality 4H-SiC epitaxial layer operated at increased temperature. The 4H-SiC is a wide-band-gap semiconductor material with favourable properties for radiation detectors like radiation tolerance and chemical stability. The prepared detectors had an active thickness of 50 µm. The active area was defined by the prepared Ni/Au Schottky contact with a circular shape and a 3.0 mm diameter. The current-voltage characteristics of prepared detectors were measured up to 300 V at different temperatures to determine the operating voltage region. The precise temperature stabilization system was developed to realize detector measurements at different temperatures. Prepared detector structures were tested with a-particles generated by a 238Pu 239Pu2448Cm radioisotopes. The 4H-SiC detector shows high-energy resolution at room and even elevated temperatures and is able to resolve two close energies generated by an alpha particle radiation source.
{"title":"High-quality detectors based on 4H-SiC operated at different temperatures","authors":"B. Zat’ko, A. Šagátová, J. Osvald, N. Gál, L. Hrubčín, E. Kováčová","doi":"10.1109/ASDAM55965.2022.9966772","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966772","url":null,"abstract":"In this paper we have aimed at the detectors based on the high-quality 4H-SiC epitaxial layer operated at increased temperature. The 4H-SiC is a wide-band-gap semiconductor material with favourable properties for radiation detectors like radiation tolerance and chemical stability. The prepared detectors had an active thickness of 50 µm. The active area was defined by the prepared Ni/Au Schottky contact with a circular shape and a 3.0 mm diameter. The current-voltage characteristics of prepared detectors were measured up to 300 V at different temperatures to determine the operating voltage region. The precise temperature stabilization system was developed to realize detector measurements at different temperatures. Prepared detector structures were tested with a-particles generated by a 238Pu 239Pu2448Cm radioisotopes. The 4H-SiC detector shows high-energy resolution at room and even elevated temperatures and is able to resolve two close energies generated by an alpha particle radiation source.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124082004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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