Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966762
Nicolò Lago
Reduced graphene oxide (rGO) is a promising alternative to graphene for the fabrication of cost-effective thin-film transistors (TFTs). Despite its interesting electrochemical properties, the rGO-TFT technology is still relative immature, especially from an electronic engineer point of view. In this work, the performance and properties of rGO-TFTs are critically investigated by considering the requirements to design rGO-based analogue and digital applications. Therefore, three fundamental figures of merit are introduced and discussed: i) intrinsic gain; i)) the trade-off between maximum transistor current and ON-OFF ratio; iii) univocal definition of the Dirac Voltage. The utility of these figures of merit is demonstrated by characterizing rGO- TFTs fabricated by two different reduction methods, showing the importance of proper fabrication protocols to optimize TFTs ‘ performance.
{"title":"On the Figures of Merit of reduced Graphene Oxide Transistors: what needed for reliable applications","authors":"Nicolò Lago","doi":"10.1109/ASDAM55965.2022.9966762","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966762","url":null,"abstract":"Reduced graphene oxide (rGO) is a promising alternative to graphene for the fabrication of cost-effective thin-film transistors (TFTs). Despite its interesting electrochemical properties, the rGO-TFT technology is still relative immature, especially from an electronic engineer point of view. In this work, the performance and properties of rGO-TFTs are critically investigated by considering the requirements to design rGO-based analogue and digital applications. Therefore, three fundamental figures of merit are introduced and discussed: i) intrinsic gain; i)) the trade-off between maximum transistor current and ON-OFF ratio; iii) univocal definition of the Dirac Voltage. The utility of these figures of merit is demonstrated by characterizing rGO- TFTs fabricated by two different reduction methods, showing the importance of proper fabrication protocols to optimize TFTs ‘ performance.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132263711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966747
J. Priesol, A. Šatka, M. Borga, A. Minj, B. Bakeroot, K. Geens
Electron beam induced current (EBIC) technique has been used to study depletion regions at the cross-sections of semi-vertical Gallium Nitride (GaN) p-n-and n: -p-n- diode structures. It has been successfully used to visualize the space charge region (SCR) at the p-n- junction and its widening into the n- drift layer, which allowed to reveal dark lines with discernibly vertical orientation assigned to threading dislocations (TDs). In these devices, also EBIC inhomogeneities at the top n + /p-body junction have been detected. Proper formation of the lateral isolation by Nitrogen implantation has been proved by a sharp drop in the EBIC signal at the border between the active and the N-implanted areas.
{"title":"Cross-sectional SEM-EBIC analysis of semi-vertical GaN power diodes","authors":"J. Priesol, A. Šatka, M. Borga, A. Minj, B. Bakeroot, K. Geens","doi":"10.1109/ASDAM55965.2022.9966747","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966747","url":null,"abstract":"Electron beam induced current (EBIC) technique has been used to study depletion regions at the cross-sections of semi-vertical Gallium Nitride (GaN) p-n-and n: -p-n- diode structures. It has been successfully used to visualize the space charge region (SCR) at the p-n- junction and its widening into the n- drift layer, which allowed to reveal dark lines with discernibly vertical orientation assigned to threading dislocations (TDs). In these devices, also EBIC inhomogeneities at the top n + /p-body junction have been detected. Proper formation of the lateral isolation by Nitrogen implantation has been proved by a sharp drop in the EBIC signal at the border between the active and the N-implanted areas.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115981023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966787
P. Micek, P. Gašo, D. Pudiš
This work deals with a simulation-based design and near-field optical microscopy measurement of IP-Dip photoresist near-field probe consisting of a series of elevated ring zone plates. The height increment implemented into the ring zone plates effectively suppresses the diffraction phenomena resulting in a narrow emission of the evanescent and propagating modes along the optical axis.
{"title":"Localization of the near-field enhancement by 3D ring-zone structure","authors":"P. Micek, P. Gašo, D. Pudiš","doi":"10.1109/ASDAM55965.2022.9966787","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966787","url":null,"abstract":"This work deals with a simulation-based design and near-field optical microscopy measurement of IP-Dip photoresist near-field probe consisting of a series of elevated ring zone plates. The height increment implemented into the ring zone plates effectively suppresses the diffraction phenomena resulting in a narrow emission of the evanescent and propagating modes along the optical axis.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125289086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966765
F. Emadi, S. Liu, A. Klami, N. Tiwary, V. Vuorinen, M. Paulasto-Kröckel
Based on the finite element (FE) simulations done in this work, lowering the bonding temperature significantly decreases the bonding induced residual stresses. Therefore, low temperature Cu-Sn-In SLID process was utilized to bond Si to Si and Si to sapphire under various bonding conditions. The microstructural evolution and the (thermo-) mechanical properties of the joints were studied. The results showed that the Cu-Sn-In SLID bonds composed of a single Cu6(Sn, In)5 IMC phase with high joint strength. Furthermore, the hardness and Young's modulus of Cu6(Sn, In)5 formed in the SLID bonding were measured to be slightly higher than that of binary Cu6Sn5.
{"title":"Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding","authors":"F. Emadi, S. Liu, A. Klami, N. Tiwary, V. Vuorinen, M. Paulasto-Kröckel","doi":"10.1109/ASDAM55965.2022.9966765","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966765","url":null,"abstract":"Based on the finite element (FE) simulations done in this work, lowering the bonding temperature significantly decreases the bonding induced residual stresses. Therefore, low temperature Cu-Sn-In SLID process was utilized to bond Si to Si and Si to sapphire under various bonding conditions. The microstructural evolution and the (thermo-) mechanical properties of the joints were studied. The results showed that the Cu-Sn-In SLID bonds composed of a single Cu6(Sn, In)5 IMC phase with high joint strength. Furthermore, the hardness and Young's modulus of Cu6(Sn, In)5 formed in the SLID bonding were measured to be slightly higher than that of binary Cu6Sn5.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122645989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966764
M. Matúš, J. Drobný, A. Kosa, J. Marek, J. Kováč, L. Stuchlíková
This paper deals with identifying electrically active defects and determining their fundamental parameters in InAlGaN/GaN HEMT structures by Deep Level Transient Fourier Spectroscopy (DLTFS) with optical excitation. Parameters of 5 electron-like defects and three hole-like defects were confirmed by DLTFS method. Parameters of 9 hole-like defects common to both structures were identified by DLTFS-O. Two hole-like defects were confirmed by both methods: DLTFS and DLTFS-O methods. The probable origin of electron-like defects could be nitrogen vacancies, defect clusters along screw- and mixed-type dislocations, the presence of surface states or emissions from the interface. The probable origin of hole-like defects could be the presence of surface states or defects in barriers. The benefits of different method utilization were confirmed by experimental results.
{"title":"Study of InAlGaN/GaN HEMT structures by DLTFS with optical excitation","authors":"M. Matúš, J. Drobný, A. Kosa, J. Marek, J. Kováč, L. Stuchlíková","doi":"10.1109/ASDAM55965.2022.9966764","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966764","url":null,"abstract":"This paper deals with identifying electrically active defects and determining their fundamental parameters in InAlGaN/GaN HEMT structures by Deep Level Transient Fourier Spectroscopy (DLTFS) with optical excitation. Parameters of 5 electron-like defects and three hole-like defects were confirmed by DLTFS method. Parameters of 9 hole-like defects common to both structures were identified by DLTFS-O. Two hole-like defects were confirmed by both methods: DLTFS and DLTFS-O methods. The probable origin of electron-like defects could be nitrogen vacancies, defect clusters along screw- and mixed-type dislocations, the presence of surface states or emissions from the interface. The probable origin of hole-like defects could be the presence of surface states or defects in barriers. The benefits of different method utilization were confirmed by experimental results.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126989832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966760
B. Hudec, G. Vanko, M. Precner, E. Dobročka, A. Seifertová, J. Fedor, J. Tóbik, K. Fröhlich
In this work, we present a pressure sensor based on piezoelectric response of a thin 100 nm ZnO 002-oriented film grown using atomic layer deposition (ALD) technique on a commercial Si3N4 membrane. In contacts on top of the ZnO film allowed measuring the piezoelectric response laterally along the ZnO film induced by the pressure difference causing mechanical deflection of the membrane. The ALD of ZnO is the key process here, where the growth characteristics were investigated in order to obtain 002-oriented piezoelectric ZnO films. A linear response of this sensor in the 0.2-1.0 kPa range was recorded.
{"title":"Piezoelectric thin film pressure sensor made by atomic layer deposition of 002-oriented ZnO on Si3N4 membrane","authors":"B. Hudec, G. Vanko, M. Precner, E. Dobročka, A. Seifertová, J. Fedor, J. Tóbik, K. Fröhlich","doi":"10.1109/ASDAM55965.2022.9966760","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966760","url":null,"abstract":"In this work, we present a pressure sensor based on piezoelectric response of a thin 100 nm ZnO 002-oriented film grown using atomic layer deposition (ALD) technique on a commercial Si3N4 membrane. In contacts on top of the ZnO film allowed measuring the piezoelectric response laterally along the ZnO film induced by the pressure difference causing mechanical deflection of the membrane. The ALD of ZnO is the key process here, where the growth characteristics were investigated in order to obtain 002-oriented piezoelectric ZnO films. A linear response of this sensor in the 0.2-1.0 kPa range was recorded.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133536969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966750
L. Cernaj, T. Závodník, J. Kozarik, T. Debnar, M. Micjan, M. Donoval, V. Režo, E. Vavrinsky, M. Kopani, H. Kosnacova
In this article we present the latest version of our ECG holter. The request for his design arose in difficult COVID times. The device is developed in cooperation and based on the specification of F. D. Roosevelt University Hospital in Banska Bystrica, Slovakia. The ECG holter is built modularly, its digital part can be used in several telemedicine projects. In addition to measuring ECG and respiration, the device also includes a wide set of physical sensors, and in order to achieve higher resistance of the device to interference, we use our own 2.4 GHz proprietary protocol.
{"title":"Advanced ECG holter with 2.4 GHz communication","authors":"L. Cernaj, T. Závodník, J. Kozarik, T. Debnar, M. Micjan, M. Donoval, V. Režo, E. Vavrinsky, M. Kopani, H. Kosnacova","doi":"10.1109/ASDAM55965.2022.9966750","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966750","url":null,"abstract":"In this article we present the latest version of our ECG holter. The request for his design arose in difficult COVID times. The device is developed in cooperation and based on the specification of F. D. Roosevelt University Hospital in Banska Bystrica, Slovakia. The ECG holter is built modularly, its digital part can be used in several telemedicine projects. In addition to measuring ECG and respiration, the device also includes a wide set of physical sensors, and in order to achieve higher resistance of the device to interference, we use our own 2.4 GHz proprietary protocol.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115410140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966742
A. Chvála, J. Marek, J. Kozarik, A. Messina, V. Vinciguerra, D. Donoval
An optimization of electrical, thermal, and mechanical properties of SiC MOSFET transistors supported by advanced effective 3-D electro-thermal device simulation is presented. The developed simulation method is capable of a full analysis of complex structures with a high speed of simulation and simple implementation. The simulation method is utilized for electrical and thermal analysis of power SiC MOSFET. Two bonding methods of SiC MOSFET transistor are analyzed and compared. Simulation results demonstrated that the optimized clip-bond concept has better electrical and thermal performance than the wire-bond.
{"title":"Electro-Thermo-Mechanical Simulation Analysis and Optimization of SiC Power MOSFET under UIS Test Condition","authors":"A. Chvála, J. Marek, J. Kozarik, A. Messina, V. Vinciguerra, D. Donoval","doi":"10.1109/ASDAM55965.2022.9966742","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966742","url":null,"abstract":"An optimization of electrical, thermal, and mechanical properties of SiC MOSFET transistors supported by advanced effective 3-D electro-thermal device simulation is presented. The developed simulation method is capable of a full analysis of complex structures with a high speed of simulation and simple implementation. The simulation method is utilized for electrical and thermal analysis of power SiC MOSFET. Two bonding methods of SiC MOSFET transistor are analyzed and compared. Simulation results demonstrated that the optimized clip-bond concept has better electrical and thermal performance than the wire-bond.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121918760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966748
J. Kozarik, T. Závodník, L. Cernaj, T. Debnar, M. Micjan, M. Donoval, K. Gasparek, E. Vavrinsky, H. Kosnacova
We present a multifunctional communication gateway (BTS), which we widely use in our telemedicine projects. This device primarily collects data from our sensor devices and distributes it to the back-end and relevant databases. The reverse data flow is also possible. For example, when developers, doctors, or the subjects themselves want to change the configuration of sensory devices, display the status, manage them remotely, or start synchronous measurements. The device is from a design point of view like a classic router. However, due to higher data transmission resistance and reliability, especially in disruptive or signal dense environment, we use own 2.4 GHz proprietary protocol for communication between sensors and BTS. The data flow between the BTS and the back-end, depending on availability, is carried out either by Wi-Fi or LTE network. The device is built universal and it can be easily supplemented with other communication protocols in the future.
{"title":"Multifunctional communication gateway for implementation in telemedicine systems","authors":"J. Kozarik, T. Závodník, L. Cernaj, T. Debnar, M. Micjan, M. Donoval, K. Gasparek, E. Vavrinsky, H. Kosnacova","doi":"10.1109/ASDAM55965.2022.9966748","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966748","url":null,"abstract":"We present a multifunctional communication gateway (BTS), which we widely use in our telemedicine projects. This device primarily collects data from our sensor devices and distributes it to the back-end and relevant databases. The reverse data flow is also possible. For example, when developers, doctors, or the subjects themselves want to change the configuration of sensory devices, display the status, manage them remotely, or start synchronous measurements. The device is from a design point of view like a classic router. However, due to higher data transmission resistance and reliability, especially in disruptive or signal dense environment, we use own 2.4 GHz proprietary protocol for communication between sensors and BTS. The data flow between the BTS and the back-end, depending on availability, is carried out either by Wi-Fi or LTE network. The device is built universal and it can be easily supplemented with other communication protocols in the future.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116900595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966788
R. Szobolovszký, J. Donovalova
Thanks to constant progress, devices in the field of electrochemical analysis are more accurate and smaller in size. This enables the transfer of electrochemical analytical techniques outside the highly specialised laboratory to the commercial environment for direct application use. This trend creates a demand for portable, affordable devices, enabling user-intuitive testing even in the field. Considering these requirements, a potentiostatic platform was developed, enabling the use of various electrochemical analytical methods. The device contains a complete analog front end, a microcontroller controlled by supporting circuits and a communication interface. The device was tested and compared with reference laboratory potentiostats using standard solutions, thus demonstrating the accuracy of the developed platform. These experiments made it possible to qualitatively evaluate the platform's ability to perform cyclic voltammetry and differential pulse voltammetry. In addition, they demonstrated the ability of the device to work as a portable analytical potentiostat capable of measuring samples using basic electrochemical methods.
{"title":"Compact portable potentiostat for specific applications: development and measurements","authors":"R. Szobolovszký, J. Donovalova","doi":"10.1109/ASDAM55965.2022.9966788","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966788","url":null,"abstract":"Thanks to constant progress, devices in the field of electrochemical analysis are more accurate and smaller in size. This enables the transfer of electrochemical analytical techniques outside the highly specialised laboratory to the commercial environment for direct application use. This trend creates a demand for portable, affordable devices, enabling user-intuitive testing even in the field. Considering these requirements, a potentiostatic platform was developed, enabling the use of various electrochemical analytical methods. The device contains a complete analog front end, a microcontroller controlled by supporting circuits and a communication interface. The device was tested and compared with reference laboratory potentiostats using standard solutions, thus demonstrating the accuracy of the developed platform. These experiments made it possible to qualitatively evaluate the platform's ability to perform cyclic voltammetry and differential pulse voltammetry. In addition, they demonstrated the ability of the device to work as a portable analytical potentiostat capable of measuring samples using basic electrochemical methods.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"175 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126936116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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