Pub Date : 2008-11-01DOI: 10.1109/IEMT.2008.5507882
Shinji Takei, Masaaki Koyama, T. Goto, K. Yasuda
The chip-on-chip (COC) package in which a controller IC chip is adhered to a power MOSFET chip with a polyimide film is described. In the heat cycle test, the polyimide film showed a good performance but the mold resin used was delaminated from the IC chip surface. From the experimental and the thermal stress simulation, we demonstrate that the resin delamination is prevented by the polyimide film with a small thermal expansion coefficient. Thus we have successfully developed the high reliable COC package promising for automotive application.
{"title":"Influence of die adhesion properties on delamination of stacked chip interconnection encapsulated in plastic package","authors":"Shinji Takei, Masaaki Koyama, T. Goto, K. Yasuda","doi":"10.1109/IEMT.2008.5507882","DOIUrl":"https://doi.org/10.1109/IEMT.2008.5507882","url":null,"abstract":"The chip-on-chip (COC) package in which a controller IC chip is adhered to a power MOSFET chip with a polyimide film is described. In the heat cycle test, the polyimide film showed a good performance but the mold resin used was delaminated from the IC chip surface. From the experimental and the thermal stress simulation, we demonstrate that the resin delamination is prevented by the polyimide film with a small thermal expansion coefficient. Thus we have successfully developed the high reliable COC package promising for automotive application.","PeriodicalId":151085,"journal":{"name":"2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129465444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-11-01DOI: 10.1109/IEMT.2008.5507878
Koushi Ohta, Masao Toya, K. Yasuda, M. Matsushima, K. Fujimoto
A novel assembly method for electronic devices replacing conventional methods is demanded. Self-organization assembly method using resin containing solder fillers has the possibilities to replace them. The method enables us to form reliable interconnects equal to that of solder bump method with underfilling, through low cost process like that using Anisotropic Conductive Adhesives (ACAs) with flexibility against design change. The process of this method is based on movement, coalescence, and wetting phenomena of the solder fillers. And the coalescence phenomena were focused on. Activator is contained in the resin to eliminate the oxide films around the solder fillers. The particle-size distribution after heating process ensured the effects of the oxides and the activator on the coalescence, which is essential for forming of conductive paths. In-situ observations and temporal change of coalescence frequency revealed that 110°C pre-heating for 4 minutes make the activator eliminate the oxide film enough before melting of the fillers, enables fillers to coalesce well.
{"title":"Observation of solder fillers coalescence in resin for development of self-organization assembly process","authors":"Koushi Ohta, Masao Toya, K. Yasuda, M. Matsushima, K. Fujimoto","doi":"10.1109/IEMT.2008.5507878","DOIUrl":"https://doi.org/10.1109/IEMT.2008.5507878","url":null,"abstract":"A novel assembly method for electronic devices replacing conventional methods is demanded. Self-organization assembly method using resin containing solder fillers has the possibilities to replace them. The method enables us to form reliable interconnects equal to that of solder bump method with underfilling, through low cost process like that using Anisotropic Conductive Adhesives (ACAs) with flexibility against design change. The process of this method is based on movement, coalescence, and wetting phenomena of the solder fillers. And the coalescence phenomena were focused on. Activator is contained in the resin to eliminate the oxide films around the solder fillers. The particle-size distribution after heating process ensured the effects of the oxides and the activator on the coalescence, which is essential for forming of conductive paths. In-situ observations and temporal change of coalescence frequency revealed that 110°C pre-heating for 4 minutes make the activator eliminate the oxide film enough before melting of the fillers, enables fillers to coalesce well.","PeriodicalId":151085,"journal":{"name":"2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122448089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-11-01DOI: 10.1109/IEMT.2008.5507812
M. Ong, X. Zhao, B. Zee, P. P. Joman, J. Chin, R. Master
This paper studied the factors causing adhesion failure between lid and adhesive. Adhesive curing mechanism has been experimentally investigated in combination of surface behaviour analysis on lid by using FTIR and XPS. The results showed residue on lid surface caused by low water rinse flow can affect the curing condition.
{"title":"Root cause study on lid adhesion failure","authors":"M. Ong, X. Zhao, B. Zee, P. P. Joman, J. Chin, R. Master","doi":"10.1109/IEMT.2008.5507812","DOIUrl":"https://doi.org/10.1109/IEMT.2008.5507812","url":null,"abstract":"This paper studied the factors causing adhesion failure between lid and adhesive. Adhesive curing mechanism has been experimentally investigated in combination of surface behaviour analysis on lid by using FTIR and XPS. The results showed residue on lid surface caused by low water rinse flow can affect the curing condition.","PeriodicalId":151085,"journal":{"name":"2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126167424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-11-01DOI: 10.1109/IEMT.2008.5507851
Manickavasagar Minor, J. Sjoberg, Jenson Lee, D. Shangguan
Flexible Printed Circuit (FPC) boards are being widely used for a number of applications to enable products in a three dimensional format thereby utilizing the “dead” space within the product envelop. During the past few years, the usage and complexity of FPC made of polyimide, polyester or teflon have grown substantially and are expected to continue to grow even more in the next coming years. In the past these FPC's have been connected to other FPC's or to a PCB with help of mainly connectors but the interest of replacing these connectors with a lower cost and smaller footprint connections with help of Anisotropic Conductive Film (ACF) is being widely explored. This paper will report the development of fine pitch ACF bonding down to 0,2mm and the mechanical and thermo-mechanical reliability of the ACF interconnects. The influence of difference process parameters and ACF materials on the ACF process yield will be discussed as well.
{"title":"Process development, repair and reliability study with Anisotropic Conductive Film bonding as a replacement for surface mount connectors and hotbar soldering","authors":"Manickavasagar Minor, J. Sjoberg, Jenson Lee, D. Shangguan","doi":"10.1109/IEMT.2008.5507851","DOIUrl":"https://doi.org/10.1109/IEMT.2008.5507851","url":null,"abstract":"Flexible Printed Circuit (FPC) boards are being widely used for a number of applications to enable products in a three dimensional format thereby utilizing the “dead” space within the product envelop. During the past few years, the usage and complexity of FPC made of polyimide, polyester or teflon have grown substantially and are expected to continue to grow even more in the next coming years. In the past these FPC's have been connected to other FPC's or to a PCB with help of mainly connectors but the interest of replacing these connectors with a lower cost and smaller footprint connections with help of Anisotropic Conductive Film (ACF) is being widely explored. This paper will report the development of fine pitch ACF bonding down to 0,2mm and the mechanical and thermo-mechanical reliability of the ACF interconnects. The influence of difference process parameters and ACF materials on the ACF process yield will be discussed as well.","PeriodicalId":151085,"journal":{"name":"2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128991735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-11-01DOI: 10.1109/IEMT.2008.5507891
Wong Wai Chi, I. Azid
In this study, the performances of the micropump with active type diaphragm actuated by thermoelectric and piezoelectric have been compared. Finite element analysis (FEA) by ANSYS®8.1 had used to simulate and analyze the deflection of the diaphragm. The FEA model actuated by thermoelectric and piezoelectric is validated by the available data. The success of the model in predicting the displacement of the diaphragm provides further encouragement in using the model to compare the diaphragm deflection actuated by difference actuated method but with same diaphragm size and actuated power. The optimized design by using thermoelectric actuator has then been shown.
{"title":"Comparison of the performances of micropump with active type diaphragm actuated by several approaches","authors":"Wong Wai Chi, I. Azid","doi":"10.1109/IEMT.2008.5507891","DOIUrl":"https://doi.org/10.1109/IEMT.2008.5507891","url":null,"abstract":"In this study, the performances of the micropump with active type diaphragm actuated by thermoelectric and piezoelectric have been compared. Finite element analysis (FEA) by ANSYS®8.1 had used to simulate and analyze the deflection of the diaphragm. The FEA model actuated by thermoelectric and piezoelectric is validated by the available data. The success of the model in predicting the displacement of the diaphragm provides further encouragement in using the model to compare the diaphragm deflection actuated by difference actuated method but with same diaphragm size and actuated power. The optimized design by using thermoelectric actuator has then been shown.","PeriodicalId":151085,"journal":{"name":"2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129041333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-11-01DOI: 10.1109/IEMT.2008.5507791
Y. Hezarjaribi, M. Hamidon, A. Bahadorimehr
In this paper, Poly-crystalline silicon carbide (poly-sic) Micro-electromechanical systems (MEMS) capacitive pressure sensor operating in harsh environment in touch mode is proposed, The principle of the paper is to design, obtain analytical solution and compare the results with the simulation for a circular diaphragm deflection before and after touch point. The sensor demonstrated a high temperature sensing capability up to 400°C, the device achieves a linear characteristic response and consists of a circular clamped-edges poly-sic diaphragm suspended over sealed cavity on a silicon carbide substrate. The sensor is operating in touch mode capacitive pressure sensor, The advantages of a touch mode are the robust structure that make the sensor to withstand harsh environment, near linear output, and large over-range protection, operating in wide range of pressure, higher sensitivity than the near linear operation in normal mode, The material is considered to be used for harsh environment is SiC (Silicon Carbide), Because of SiC owing excellent electrical stability, mechanical robustness, and chemical inertness properties and the application of pressure sensors in harsh environments are, such as automotive industries, aerospace, oil/logging equipments, nuclear station, and power station. We are simulating MEMS capacitive pressure sensor to optimize the design, improve the performance and reduce the time of fabricating process of the device. The proposed touch mode MEMS capacitive pressure sensor demonstrated diaphragm ranging from 150 μm to 360 μm in diameter, with the gap depth from 0.5 μm to 7.5 μm and the sensor exhibit a linear response with pressure from 0.05 Mpa to 10 Mpa.
{"title":"Pressure sensors based on MEMS, operating in harsh environments (touch-mode)","authors":"Y. Hezarjaribi, M. Hamidon, A. Bahadorimehr","doi":"10.1109/IEMT.2008.5507791","DOIUrl":"https://doi.org/10.1109/IEMT.2008.5507791","url":null,"abstract":"In this paper, Poly-crystalline silicon carbide (poly-sic) Micro-electromechanical systems (MEMS) capacitive pressure sensor operating in harsh environment in touch mode is proposed, The principle of the paper is to design, obtain analytical solution and compare the results with the simulation for a circular diaphragm deflection before and after touch point. The sensor demonstrated a high temperature sensing capability up to 400°C, the device achieves a linear characteristic response and consists of a circular clamped-edges poly-sic diaphragm suspended over sealed cavity on a silicon carbide substrate. The sensor is operating in touch mode capacitive pressure sensor, The advantages of a touch mode are the robust structure that make the sensor to withstand harsh environment, near linear output, and large over-range protection, operating in wide range of pressure, higher sensitivity than the near linear operation in normal mode, The material is considered to be used for harsh environment is SiC (Silicon Carbide), Because of SiC owing excellent electrical stability, mechanical robustness, and chemical inertness properties and the application of pressure sensors in harsh environments are, such as automotive industries, aerospace, oil/logging equipments, nuclear station, and power station. We are simulating MEMS capacitive pressure sensor to optimize the design, improve the performance and reduce the time of fabricating process of the device. The proposed touch mode MEMS capacitive pressure sensor demonstrated diaphragm ranging from 150 μm to 360 μm in diameter, with the gap depth from 0.5 μm to 7.5 μm and the sensor exhibit a linear response with pressure from 0.05 Mpa to 10 Mpa.","PeriodicalId":151085,"journal":{"name":"2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114188726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-11-01DOI: 10.1109/IEMT.2008.5507862
M. Picardal, G. Coronel
Process window for Electro-chemical Deflash (ED) and High Pressure Water Jet (HPWJ) should be very well defined to ensure complete removal of organic materials on the surface of the frame prior to Metal Finishing (MF). This will help in ensuring complete coverage and good adhesion of metal finish. This will likewise avoid potential package defects like chipping, crack and delamination. In establishing the optimum window for ON Semiconductor Philippines Inc. (OSPI). ED and HPWJ . benchmarking study was performed and results were discussed to the selected Original Engineering Material (OEM) for the design of the machine. The benchmarking activity helped to determine potential failures of the process, the controls needed to monitor the process and the resources to set-up the machine. The resulting design was characterized using the Machine Process Capability Study (MPCpS). This involves five stages such as: 1) Process characterization where each machine and process parts and functions are defined. 2) Metrology characterization where response measuring equipment's precision and accuracy are tested and ensured capable prior to proceeding into the next stage. 3) Machine and Process Capability determination where sets of experiments are performed to determine the capability from the affected process up to the last process step. 4) Optimization if the process is found not capable or Machine and Process cliff if found capable. In this stage, window where the process will fail is determined, and finally 5) Control to ensure that defined capable window is maintained during production. OSPI's well characterized Deflash process has eliminated problems like Missing Lead Finish (MLF) and Resin Bleed (RB). It has also reduced Foreign Material problem by 90% and Tape and Reel final gate problem by 42%. It has helped increase Trim and Form's productivity by 25% by eliminating tin flakes on non-functional areas of the frame. Most of all, since the implementation of this project, there was no observed occurrence of package related problems.
{"title":"Characterization of Electro-chemical Deflash and High Pressure Water Jet through MPCpS","authors":"M. Picardal, G. Coronel","doi":"10.1109/IEMT.2008.5507862","DOIUrl":"https://doi.org/10.1109/IEMT.2008.5507862","url":null,"abstract":"Process window for Electro-chemical Deflash (ED) and High Pressure Water Jet (HPWJ) should be very well defined to ensure complete removal of organic materials on the surface of the frame prior to Metal Finishing (MF). This will help in ensuring complete coverage and good adhesion of metal finish. This will likewise avoid potential package defects like chipping, crack and delamination. In establishing the optimum window for ON Semiconductor Philippines Inc. (OSPI). ED and HPWJ . benchmarking study was performed and results were discussed to the selected Original Engineering Material (OEM) for the design of the machine. The benchmarking activity helped to determine potential failures of the process, the controls needed to monitor the process and the resources to set-up the machine. The resulting design was characterized using the Machine Process Capability Study (MPCpS). This involves five stages such as: 1) Process characterization where each machine and process parts and functions are defined. 2) Metrology characterization where response measuring equipment's precision and accuracy are tested and ensured capable prior to proceeding into the next stage. 3) Machine and Process Capability determination where sets of experiments are performed to determine the capability from the affected process up to the last process step. 4) Optimization if the process is found not capable or Machine and Process cliff if found capable. In this stage, window where the process will fail is determined, and finally 5) Control to ensure that defined capable window is maintained during production. OSPI's well characterized Deflash process has eliminated problems like Missing Lead Finish (MLF) and Resin Bleed (RB). It has also reduced Foreign Material problem by 90% and Tape and Reel final gate problem by 42%. It has helped increase Trim and Form's productivity by 25% by eliminating tin flakes on non-functional areas of the frame. Most of all, since the implementation of this project, there was no observed occurrence of package related problems.","PeriodicalId":151085,"journal":{"name":"2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121882255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-11-01DOI: 10.1109/IEMT.2008.5507860
Song HuaJun
This technical paper presents the ultra low loop height challenges faced in the development of miniaturized SOT-923 package. It is drawn from the package development experiences for Flat Lead packages of 0.8 mm × 0.6 mm × 0.4 mm (SOD-923) which was successfully developed and introduced commercially. This product is mainly used on hand-held applications where the size has become smaller. Therefore, loop height is needed to be controlled very low. In order to achieve such low loop height, several solutions have been considered: i) Bonding mode selection; ii) capillary selection for ultra low loop requirement; iii) development of special bonding parameters for ultra low loop control. iv) final product quality evaluation and reliability requirement which included wire pull test, ball shear test, wire peeling test and reliability test.
本文介绍了小型化SOT-923封装开发中面临的超低环高挑战。它借鉴了0.8 mm × 0.6 mm × 0.4 mm平板引线封装(SOD-923)的封装开发经验，并已成功开发并商业化。该产品主要用于尺寸变小的手持应用。因此，回路高度需要控制得很低。为了实现如此低的环路高度，考虑了几种解决方案:i) Bonding mode的选择;Ii)超低回路要求的毛细管选择;Iii)开发用于超低回路控制的特殊键合参数。最终产品质量评价和可靠性要求，包括拉丝试验、球剪试验、剥丝试验和可靠性试验。
{"title":"Ultra low loop development","authors":"Song HuaJun","doi":"10.1109/IEMT.2008.5507860","DOIUrl":"https://doi.org/10.1109/IEMT.2008.5507860","url":null,"abstract":"This technical paper presents the ultra low loop height challenges faced in the development of miniaturized SOT-923 package. It is drawn from the package development experiences for Flat Lead packages of 0.8 mm × 0.6 mm × 0.4 mm (SOD-923) which was successfully developed and introduced commercially. This product is mainly used on hand-held applications where the size has become smaller. Therefore, loop height is needed to be controlled very low. In order to achieve such low loop height, several solutions have been considered: i) Bonding mode selection; ii) capillary selection for ultra low loop requirement; iii) development of special bonding parameters for ultra low loop control. iv) final product quality evaluation and reliability requirement which included wire pull test, ball shear test, wire peeling test and reliability test.","PeriodicalId":151085,"journal":{"name":"2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130588707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-11-01DOI: 10.1109/IEMT.2008.5507873
Huang Guojun, Luan Jing-en, X. Baraton
After encapsulation, thermo-mechanical deformation builds up within the electronic packages due to temperature coefficient of expansion mismatch between the respective materials within the package as it cools to room temperature. As the trends in semiconductor packages continue toward a decrease in overall package size and an increase in functionality and performance requirements, they bring challenges of processing, handling, and understanding smaller components and, in particular, thinner dies. One of the reliability problems, die crack, becomes more serious due to the larger die area compared with package size, thinner thickness and thermal mismatch between the respective materials within the package. Die strength can be adversely affected during various manufacturing processes, such as grinding and chipping. A realistic understanding of the significance of processing on die strength is gained through the study of the actual, processed component. This work try to find the simple test method for determination of die strength to improve the scatter and try to differentiate the factors that affect the variability of die strength, in order to find out the causes of the weakness of the die strength. The surface conditions (roughness) of the specimens are determined by atomic force microscopy (AFM) and correlated to failure strength. A practical example is presented here that die cracking analysis has been done for a chip array thin core BGA (CTBGA) during thermal cycling. The die stress is calculated based on the finite element analysis (FEA) of CTBGA and the FEA-predicted die stress is used to predict the die failure rate compared with the experiment results.
{"title":"Characterization of silicon die strength with application to die crack analysis","authors":"Huang Guojun, Luan Jing-en, X. Baraton","doi":"10.1109/IEMT.2008.5507873","DOIUrl":"https://doi.org/10.1109/IEMT.2008.5507873","url":null,"abstract":"After encapsulation, thermo-mechanical deformation builds up within the electronic packages due to temperature coefficient of expansion mismatch between the respective materials within the package as it cools to room temperature. As the trends in semiconductor packages continue toward a decrease in overall package size and an increase in functionality and performance requirements, they bring challenges of processing, handling, and understanding smaller components and, in particular, thinner dies. One of the reliability problems, die crack, becomes more serious due to the larger die area compared with package size, thinner thickness and thermal mismatch between the respective materials within the package. Die strength can be adversely affected during various manufacturing processes, such as grinding and chipping. A realistic understanding of the significance of processing on die strength is gained through the study of the actual, processed component. This work try to find the simple test method for determination of die strength to improve the scatter and try to differentiate the factors that affect the variability of die strength, in order to find out the causes of the weakness of the die strength. The surface conditions (roughness) of the specimens are determined by atomic force microscopy (AFM) and correlated to failure strength. A practical example is presented here that die cracking analysis has been done for a chip array thin core BGA (CTBGA) during thermal cycling. The die stress is calculated based on the finite element analysis (FEA) of CTBGA and the FEA-predicted die stress is used to predict the die failure rate compared with the experiment results.","PeriodicalId":151085,"journal":{"name":"2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124722607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-11-01DOI: 10.1109/IEMT.2008.5507875
F. Che, J. Luan, D. Yap, K. Goh, X. Baraton
With the increasing requirement for lead-free solders, it is desired to know how different solder alloys affect on reliability of microelectronic assembly. Some fatigue life models for Sn-Ag-Cu (SAC) solder have been developed by researchers. The Ni-dopant lead free solder is increasingly used in electronic packages due to its good drop performance. Currently, it lacks the fatigue life model for Ni doped SAC solder. In this paper, thermal cycling test and finite element simulation were conducted for 5 FBGA (Fine pitch BGA) assemblies with Sn-Ag-Cu-Ni (SACN) lead free solder. The thermal fatigue life prediction model was developed for FBGA assemblies with SACN solder by combining experimental and simulation results. The good correlation between predicted and experimental lives was achieved. In addition, the effect of geometry and loading condition on solder joint predicted life was investigated based on the finite element simulation result and the developed life model.
{"title":"Thermal cycling fatigue model development for FBGA assembly with Sn-Ag-based lead-free solder","authors":"F. Che, J. Luan, D. Yap, K. Goh, X. Baraton","doi":"10.1109/IEMT.2008.5507875","DOIUrl":"https://doi.org/10.1109/IEMT.2008.5507875","url":null,"abstract":"With the increasing requirement for lead-free solders, it is desired to know how different solder alloys affect on reliability of microelectronic assembly. Some fatigue life models for Sn-Ag-Cu (SAC) solder have been developed by researchers. The Ni-dopant lead free solder is increasingly used in electronic packages due to its good drop performance. Currently, it lacks the fatigue life model for Ni doped SAC solder. In this paper, thermal cycling test and finite element simulation were conducted for 5 FBGA (Fine pitch BGA) assemblies with Sn-Ag-Cu-Ni (SACN) lead free solder. The thermal fatigue life prediction model was developed for FBGA assemblies with SACN solder by combining experimental and simulation results. The good correlation between predicted and experimental lives was achieved. In addition, the effect of geometry and loading condition on solder joint predicted life was investigated based on the finite element simulation result and the developed life model.","PeriodicalId":151085,"journal":{"name":"2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114948903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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