{"title":"IQ-code for PDL and Crosstalk Mitigation in Nyquist-WDM Transmission based on DSC","authors":"Akram Abouseif, Rami Klaimi, Ghaya Rekaya-Ben Othman, Yves Jaouën, Jamal Darweesh","doi":"10.1109/jlt.2024.3440399","DOIUrl":"https://doi.org/10.1109/jlt.2024.3440399","url":null,"abstract":"","PeriodicalId":16144,"journal":{"name":"Journal of Lightwave Technology","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-08DOI: 10.1109/jlt.2024.3440509
Wenjie Lai, Yaming Liu, Bin Wang, Weifeng Zhang
{"title":"Photonic Generation of High-Repetition-Rate Arbitrary Microwave Waveforms Based on Fractional Temporal Talbot Effect","authors":"Wenjie Lai, Yaming Liu, Bin Wang, Weifeng Zhang","doi":"10.1109/jlt.2024.3440509","DOIUrl":"https://doi.org/10.1109/jlt.2024.3440509","url":null,"abstract":"","PeriodicalId":16144,"journal":{"name":"Journal of Lightwave Technology","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-07DOI: 10.1109/jlt.2024.3439875
Jui-Hung Weng, Wei-Chi Lo, Jiaxing Wang, Borching Su, Constance J. Chang-Hasnain, Gong-Ru Lin
{"title":"Adaptively Encoding Multimode VCSEL with Spectral Efficient Data Formats for Seamless Wired-Wireless Network Coverage","authors":"Jui-Hung Weng, Wei-Chi Lo, Jiaxing Wang, Borching Su, Constance J. Chang-Hasnain, Gong-Ru Lin","doi":"10.1109/jlt.2024.3439875","DOIUrl":"https://doi.org/10.1109/jlt.2024.3439875","url":null,"abstract":"","PeriodicalId":16144,"journal":{"name":"Journal of Lightwave Technology","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-07DOI: 10.1109/jlt.2024.3439860
Junhao Jing, Tao Wang, Yongxing Guo, Wanhuan Zhou
{"title":"ITO Film-Coated SPR Sensor Based on Plastic Optical Fiber for Seawater Salinity Measurement","authors":"Junhao Jing, Tao Wang, Yongxing Guo, Wanhuan Zhou","doi":"10.1109/jlt.2024.3439860","DOIUrl":"https://doi.org/10.1109/jlt.2024.3439860","url":null,"abstract":"","PeriodicalId":16144,"journal":{"name":"Journal of Lightwave Technology","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-07DOI: 10.1109/JLT.2024.3440040
Tzu-Yun Chang;Martin Ebert;Ke Li;Junbo Zhu;Xingzhao Yan;Han Du;Mehdi Banakar;Dehn T. Tran;Callum G. Littlejohns;Adam Scofield;Guomin Yu;Roshanak Shafiiha;Aaron Zilkie;Graham T. Reed;David J. Thomson;Weiwei Zhang
We demonstrate silicon/SiO $_{2}$ /polysilicon lateral MOS-Capacitor (MOSCAP) RRM operating above 50 GHz with modulation amplitude enhanced by a large plasma absorption within the MOS junction. A MOSCAP ring resonator modulator (RRM) model has been built using Lumerical software, in which the plasma effect is defined by adopting a reported superlinear rather than linear plasma absorption equation, which aligns well with our experimental results. The performance of the MOSCAP RRMs has been analyzed with different thicknesses of insulator oxide ( $t_{text{ox}}$ ). The modulation performance is enhanced with thinner $t_{text{ox}}$ down to 3 nm, giving a lower insertion loss and larger optical modulation amplitude (OMA) when benchmarked with a conventional depletion type RRM with a low $V_{pi }L$ of 2.6–4.0 V $cdot$ mm under a bias voltage $V_{text{b}}$ 0–3 V. High-speed operation of the MOSCAP RRM with radius 15 μm demonstrated an average power insertion loss (IL $_{text{ave}}$ ) of 3.5dB and one level insertion loss (IL $_{text{one}}$ ) of 2dB for achieving a 3dB dynamic ER at a data rate of 30 Gb/s and bit-error-rate (BER) $<! 1 times 10^{-12}$ . The same performance is possible at 50 Gb/s when feed-forward-equalization is enabled on the detection side. We also show the possibility of operating at 224 Gb/s using 4-level pulse amplitude modulation (PAM-4) for a MOSCAP RRM incorporating two active segments. The MOSCAP RRM provides an attractive solution to surpass the performance of the conventional depletion-type RRM, for which future performance scaling is limited with increased doping density towards $1 times 10^{19}$ cm $^{-3}$ .
{"title":"Advancing All Silicon MOSCAP Ring Modulators With Ultra-Thin Sub-5 nm Insulator","authors":"Tzu-Yun Chang;Martin Ebert;Ke Li;Junbo Zhu;Xingzhao Yan;Han Du;Mehdi Banakar;Dehn T. Tran;Callum G. Littlejohns;Adam Scofield;Guomin Yu;Roshanak Shafiiha;Aaron Zilkie;Graham T. Reed;David J. Thomson;Weiwei Zhang","doi":"10.1109/JLT.2024.3440040","DOIUrl":"10.1109/JLT.2024.3440040","url":null,"abstract":"We demonstrate silicon/SiO\u0000<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>\u0000/polysilicon lateral MOS-Capacitor (MOSCAP) RRM operating above 50 GHz with modulation amplitude enhanced by a large plasma absorption within the MOS junction. A MOSCAP ring resonator modulator (RRM) model has been built using Lumerical software, in which the plasma effect is defined by adopting a reported superlinear rather than linear plasma absorption equation, which aligns well with our experimental results. The performance of the MOSCAP RRMs has been analyzed with different thicknesses of insulator oxide (\u0000<inline-formula><tex-math>$t_{text{ox}}$</tex-math></inline-formula>\u0000). The modulation performance is enhanced with thinner \u0000<inline-formula><tex-math>$t_{text{ox}}$</tex-math></inline-formula>\u0000 down to 3 nm, giving a lower insertion loss and larger optical modulation amplitude (OMA) when benchmarked with a conventional depletion type RRM with a low \u0000<inline-formula><tex-math>$V_{pi }L$</tex-math></inline-formula>\u0000 of 2.6–4.0 V\u0000<inline-formula><tex-math>$cdot$</tex-math></inline-formula>\u0000 mm under a bias voltage \u0000<inline-formula><tex-math>$V_{text{b}}$</tex-math></inline-formula>\u0000 0–3 V. High-speed operation of the MOSCAP RRM with radius 15 μm demonstrated an average power insertion loss (IL\u0000<inline-formula><tex-math>$_{text{ave}}$</tex-math></inline-formula>\u0000) of 3.5dB and one level insertion loss (IL\u0000<inline-formula><tex-math>$_{text{one}}$</tex-math></inline-formula>\u0000) of 2dB for achieving a 3dB dynamic ER at a data rate of 30 Gb/s and bit-error-rate (BER) \u0000<inline-formula><tex-math>$<! 1 times 10^{-12}$</tex-math></inline-formula>\u0000. The same performance is possible at 50 Gb/s when feed-forward-equalization is enabled on the detection side. We also show the possibility of operating at 224 Gb/s using 4-level pulse amplitude modulation (PAM-4) for a MOSCAP RRM incorporating two active segments. The MOSCAP RRM provides an attractive solution to surpass the performance of the conventional depletion-type RRM, for which future performance scaling is limited with increased doping density towards \u0000<inline-formula><tex-math>$1 times 10^{19}$</tex-math></inline-formula>\u0000 cm\u0000<inline-formula><tex-math>$^{-3}$</tex-math></inline-formula>\u0000.","PeriodicalId":16144,"journal":{"name":"Journal of Lightwave Technology","volume":null,"pages":null},"PeriodicalIF":4.1,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10628986","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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