Building upon an anion doping strategy, this study proposes using F− regulation to enhance the luminescence performance of Ga2O3:Eu3+ phosphors. To address the contradiction between the low Eu3+ characteristic absorption and the strong Ga2O3 intrinsic emission induced by charge transfer band (CTB) excitation in traditional Ga2O3:Eu3+ systems, this study successfully prepared a series of Ga2O3:Eu3+/F− phosphors with different F− doping concentrations using an oleic acid-assisted solvothermal method combined with high-temperature sintering. The phases, morphology, structure, and luminescent properties of the samples were systematically analyzed. Experimental results show that F− successfully replaces part of the O2− in the phosphor and alters the local symmetry of Eu3+, which results in 5D0→7F1 becoming the main transition path for the characteristic luminescence of Eu3+, shifting the main emission peak from 615 nm to 587 nm. Under CTB excitation, F− doping significantly enhanced the Eu3+ characteristic emission without significantly altering the Ga2O3 matrix emission. Under optimal reaction conditions, the luminescence intensity of the magnetic dipole transition in Ga2O3:Eu3+/F− phosphor was enhanced approximately 26-fold, with the quantum yield reaching 9.26 % and the 5D0 excited state lifetime increasing to 1.83 ms. This modulation of the emission behavior also caused the phosphor chromaticity to shift from blue-purple to orange. This study demonstrates the selective enhancement mechanism of F− doping in Ga2O3:Eu3+ luminescence, providing a reference for the design of high-performance rare-earth luminescent materials.
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