Pub Date : 2016-05-22DOI: 10.1109/RFIC.2016.7508306
R. Yazicigil, Tanbir Haque, M. Kumar, Jeffrey Yuan, John Wright, P. Kinget
A rapid interferer-detector for cognitive radio systems is presented that uses a compressed-sampling time-segmented quadrature analog-to-information converter (TS-QAIC). The TS-QAIC introduces system scalability through adaptive thresholding and time segmentation, while limiting silicon cost and complexity. The TS-QAIC can detect 6 interferers in 2.7-3.7GHz in 10.4μs with 8 physical I/Q branches. The TS-QAIC chip implemented in 65nm CMOS on 0.517mm2 (active area) consumes 81.2mW from 1.2V.
{"title":"A compressed-sampling time-segmented quadrature analog-to-information converter for wideband rapid detection of up to 6 interferers with adaptive thresholding","authors":"R. Yazicigil, Tanbir Haque, M. Kumar, Jeffrey Yuan, John Wright, P. Kinget","doi":"10.1109/RFIC.2016.7508306","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508306","url":null,"abstract":"A rapid interferer-detector for cognitive radio systems is presented that uses a compressed-sampling time-segmented quadrature analog-to-information converter (TS-QAIC). The TS-QAIC introduces system scalability through adaptive thresholding and time segmentation, while limiting silicon cost and complexity. The TS-QAIC can detect 6 interferers in 2.7-3.7GHz in 10.4μs with 8 physical I/Q branches. The TS-QAIC chip implemented in 65nm CMOS on 0.517mm2 (active area) consumes 81.2mW from 1.2V.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131350315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/RFIC.2016.7508287
Zhebin Hu, L. D. de Vreede, M. Alavi, D. A. Calvillo-Cortes, R. Staszewski, Songbai He
In this paper, we present a fully integrated RFDAC-based outphasing power amplifier (ROPA) in 40-nm CMOS that achieves 22.2 dBm peak output power with 49.2% drain efficiency at 5.9 GHz. It employs differential quasi-load-insensitive Class-E branch PAs that can dynamically be segmented using a 3-bit digital amplitude control word to improve efficiency at power back-off. At 8 dB back-off, this segmentation technique improves the ROPA drain and system efficiency by 5% and 7%, respectively, when compared to a non-segmented approach.
{"title":"A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power","authors":"Zhebin Hu, L. D. de Vreede, M. Alavi, D. A. Calvillo-Cortes, R. Staszewski, Songbai He","doi":"10.1109/RFIC.2016.7508287","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508287","url":null,"abstract":"In this paper, we present a fully integrated RFDAC-based outphasing power amplifier (ROPA) in 40-nm CMOS that achieves 22.2 dBm peak output power with 49.2% drain efficiency at 5.9 GHz. It employs differential quasi-load-insensitive Class-E branch PAs that can dynamically be segmented using a 3-bit digital amplitude control word to improve efficiency at power back-off. At 8 dB back-off, this segmentation technique improves the ROPA drain and system efficiency by 5% and 7%, respectively, when compared to a non-segmented approach.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"154 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131372684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/RFIC.2016.7508264
C. Schwan, K. Chew, Byounghak Lee, O. D. Restrepo, M. Kota, W. Chow, S. N. Ong, M. Cheng, X. S. Loo, R. Illgen, A. Huschka, M. Wiatr, Bhoopendra Singh, U. Kahler, J. Watts
We report experimental improvement of both RF and digital AC performance of a 28nm CMOS technology by predoping the gate poly. The results are explained in terms of the physical structure of the gate and the atomic structure of the gate TiN/Si interface in the gate stack.
{"title":"CMOS RF performance gain by gate resistance optimization","authors":"C. Schwan, K. Chew, Byounghak Lee, O. D. Restrepo, M. Kota, W. Chow, S. N. Ong, M. Cheng, X. S. Loo, R. Illgen, A. Huschka, M. Wiatr, Bhoopendra Singh, U. Kahler, J. Watts","doi":"10.1109/RFIC.2016.7508264","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508264","url":null,"abstract":"We report experimental improvement of both RF and digital AC performance of a 28nm CMOS technology by predoping the gate poly. The results are explained in terms of the physical structure of the gate and the atomic structure of the gate TiN/Si interface in the gate stack.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125172753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/RFIC.2016.7508242
Song Hu, Fei Wang, Hua Wang
This paper presents a transformer-based inverted complementary cross-coupled voltage-controlled oscillator (VCO) topology. Without compromising the start-up condition, it isolates the source nodes for the cross-coupled devices, suppresses the flicker noise up-conversion, and thus results in a superior phase noise performance. A prototype is implemented in a standard 130nm bulk CMOS process with a core area of 0.34mm2. At 1.86GHz, the measured FoM is 190.3/192.2/193.3dBc/Hz at 10k/100k/1MHz offsets with a 1/f3 phase noise corner of only 13kHz. The VCO consumes 1.1mA from a 1.5V supply. High FoM and low 1/f3 phase noise corners are consistently achieved over 20.8% frequency tuning range (1.68-2.07GHz).
{"title":"A transformer-based inverted complementary cross-coupled VCO with a 193.3dBc/Hz FoM and 13kHz 1/f3 noise corner","authors":"Song Hu, Fei Wang, Hua Wang","doi":"10.1109/RFIC.2016.7508242","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508242","url":null,"abstract":"This paper presents a transformer-based inverted complementary cross-coupled voltage-controlled oscillator (VCO) topology. Without compromising the start-up condition, it isolates the source nodes for the cross-coupled devices, suppresses the flicker noise up-conversion, and thus results in a superior phase noise performance. A prototype is implemented in a standard 130nm bulk CMOS process with a core area of 0.34mm2. At 1.86GHz, the measured FoM is 190.3/192.2/193.3dBc/Hz at 10k/100k/1MHz offsets with a 1/f3 phase noise corner of only 13kHz. The VCO consumes 1.1mA from a 1.5V supply. High FoM and low 1/f3 phase noise corners are consistently achieved over 20.8% frequency tuning range (1.68-2.07GHz).","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116318351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/RFIC.2016.7508263
R. Ma, Fei Lu, Qi Chen, Chenkun Wang, Feng Liu, Wanghui Zou, Albert Z. H. Wang
We demonstrate a 2.22-2.92GHz LC voltage-controlled oscillator (LC-VCO) in an 180nm SOI CMOS integrated with a novel compact inductor with vertical magnetic core. The new magnetic-enhanced inductor was fabricated using a new CMOS-compatible process. Measurements show that the single-layer magnetic-cored inductor increases its inductor density by 16.9% within the operation frequency range, leading to a phase noise reduction for the VCO from -106.97dBc/Hz to -113.49dBc/Hz at 10MHz offset frequency. This VCO prototype demonstrates the potential of designing RF system-on-a-chip (SoC) using new vertical magnetic-cored inductors.
{"title":"A 2.22–2.92GHz LC-VCO demonstrated with an integrated magnetic-enhanced inductor in 180nm SOI CMOS","authors":"R. Ma, Fei Lu, Qi Chen, Chenkun Wang, Feng Liu, Wanghui Zou, Albert Z. H. Wang","doi":"10.1109/RFIC.2016.7508263","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508263","url":null,"abstract":"We demonstrate a 2.22-2.92GHz LC voltage-controlled oscillator (LC-VCO) in an 180nm SOI CMOS integrated with a novel compact inductor with vertical magnetic core. The new magnetic-enhanced inductor was fabricated using a new CMOS-compatible process. Measurements show that the single-layer magnetic-cored inductor increases its inductor density by 16.9% within the operation frequency range, leading to a phase noise reduction for the VCO from -106.97dBc/Hz to -113.49dBc/Hz at 10MHz offset frequency. This VCO prototype demonstrates the potential of designing RF system-on-a-chip (SoC) using new vertical magnetic-cored inductors.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129413918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/RFIC.2016.7508251
Chris Mayer, David J. McLaurin, J. Fan, Steve Bal, C. Angell, Oliver E. Gysel, Martin McCormick, M. Manglani, Richard P. Schubert, Brian Reggiannini, J. Kornblum, Lu Wu, Lex Leonard, S. Bhal, A. Ya. Kagan, T. Montalvo
Network densification and FD MIMO in cellular networks require higher levels of base station integration while still meeting stringent performance requirements. We present a monolithic transmitter with integrated digital predistortion and calibration which allows RF agile, multi-carrier operation and enables efficient small cell and FD MIMO systems to be realized below 24dBm/antenna.
{"title":"A direct-conversion transmitter for small-cell cellular base stations with integrated digital predistortion in 65nm CMOS","authors":"Chris Mayer, David J. McLaurin, J. Fan, Steve Bal, C. Angell, Oliver E. Gysel, Martin McCormick, M. Manglani, Richard P. Schubert, Brian Reggiannini, J. Kornblum, Lu Wu, Lex Leonard, S. Bhal, A. Ya. Kagan, T. Montalvo","doi":"10.1109/RFIC.2016.7508251","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508251","url":null,"abstract":"Network densification and FD MIMO in cellular networks require higher levels of base station integration while still meeting stringent performance requirements. We present a monolithic transmitter with integrated digital predistortion and calibration which allows RF agile, multi-carrier operation and enables efficient small cell and FD MIMO systems to be realized below 24dBm/antenna.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129422739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/RFIC.2016.7508250
Tianbing Chen, B. Vijayakumar, Tzung-yin Lee, C. Huang, M. McPartlin
In this work, the thermal coupling resistance (R12) between the reference transistor and the output transistor in a current mirror is characterized by two different measurement techniques: the constant voltage, and the constant current R12 extractions. The extracted R12 from both methods are very similar. The constant voltage method is deemed to be more physical or accurate than the constant current method. Further TCAD simulation agrees well with R12 measurement data.
{"title":"On the characterization of thermal coupling resistance in a current mirror","authors":"Tianbing Chen, B. Vijayakumar, Tzung-yin Lee, C. Huang, M. McPartlin","doi":"10.1109/RFIC.2016.7508250","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508250","url":null,"abstract":"In this work, the thermal coupling resistance (R12) between the reference transistor and the output transistor in a current mirror is characterized by two different measurement techniques: the constant voltage, and the constant current R12 extractions. The extracted R12 from both methods are very similar. The constant voltage method is deemed to be more physical or accurate than the constant current method. Further TCAD simulation agrees well with R12 measurement data.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124745557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/RFIC.2016.7508293
Omar Elsayed, M. Abouzied, E. Sánchez-Sinencio
This paper introduces a wireless receiver system that harvests energy from the out-of-band RF blockers which enables sustainable operation and extends battery life for IoT applications. Operating at 900 MHz band and fabricated in CMOS 180 nm, the proposed RF receiver system architecture can operate at the presence of unavoidable high out-of-band blockers (≈0 dBm) yet consumes 534 μW. Moreover, 46% of this dc power is extracted from existing blockers via RF energy harvesting techniques.
{"title":"A 540 µW RF wireless receiver assisted by RF blocker energy harvesting for IoT applications with +18 dBm OB-IIP3","authors":"Omar Elsayed, M. Abouzied, E. Sánchez-Sinencio","doi":"10.1109/RFIC.2016.7508293","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508293","url":null,"abstract":"This paper introduces a wireless receiver system that harvests energy from the out-of-band RF blockers which enables sustainable operation and extends battery life for IoT applications. Operating at 900 MHz band and fabricated in CMOS 180 nm, the proposed RF receiver system architecture can operate at the presence of unavoidable high out-of-band blockers (≈0 dBm) yet consumes 534 μW. Moreover, 46% of this dc power is extracted from existing blockers via RF energy harvesting techniques.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117228292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/RFIC.2016.7508261
J. Shealy, M. D. Hodge, P. Patel, R. Vetury, Alexander Feldman, S. Gibb, Mark D. Boomgarden, Michael P. Lewis, J. Shealy, J. Shealy
Bulk acoustic wave (BAW) resonators using single crystal AlGaN piezoelectric films are reported. Metal-organic chemical vapor deposition (MOCVD) growth was used to obtain single crystal AlGaN films on 150-mm diameter <;111> silicon substrates with (0002) XRD rocking curve FWHM of 0.37°. Series-configured 12 Ω BAW resonators with resonant frequency of 2.302GHz were fabricated with insertion loss of 0.29dB and an electromechanical coupling of 4.44%. Maximum resonator Qmax was 1277, leading to a figure of merit (FOM) of 57. Unloaded acoustic Qr was 4243, leading to a FOM of 188. These FOM are the highest reported to date for MOCVD-based single crystal resonators.
{"title":"Single crystal AlGaN bulk acoustic wave resonators on silicon substrates with high electromechanical coupling","authors":"J. Shealy, M. D. Hodge, P. Patel, R. Vetury, Alexander Feldman, S. Gibb, Mark D. Boomgarden, Michael P. Lewis, J. Shealy, J. Shealy","doi":"10.1109/RFIC.2016.7508261","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508261","url":null,"abstract":"Bulk acoustic wave (BAW) resonators using single crystal AlGaN piezoelectric films are reported. Metal-organic chemical vapor deposition (MOCVD) growth was used to obtain single crystal AlGaN films on 150-mm diameter <;111> silicon substrates with (0002) XRD rocking curve FWHM of 0.37°. Series-configured 12 Ω BAW resonators with resonant frequency of 2.302GHz were fabricated with insertion loss of 0.29dB and an electromechanical coupling of 4.44%. Maximum resonator Qmax was 1277, leading to a figure of merit (FOM) of 57. Unloaded acoustic Qr was 4243, leading to a FOM of 188. These FOM are the highest reported to date for MOCVD-based single crystal resonators.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127559457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/RFIC.2016.7508270
Run Chen, H. Hashemi
High-Q resonators may be used to synthesize selective bandpass filters. Many commercial radio-frequency filters are based on coupled-resonators and realized in surface and bulk acoustic wave technologies due to the high quality factor and compact size of acoustic resonators. In this paper, it is shown that discrete-time equivalent of coupled-resonator bandpass filters may be realized using passive switched-capacitor circuits. The center frequency and the bandwidth are determined by the frequency of the switch driving signals and the capacitor values. The proposed passive filters can be linear, low noise, and compact. To further enhance the in-band linearity, an RF bootstrapping technique is proposed. Design and experimental verification of a forth-order RF BPF and a duplexer, realized in a 65nm CMOS technology, are reported.
{"title":"Passive coupled-switched-capacitor-resonator-based reconfigurable RF front-end filters and duplexers","authors":"Run Chen, H. Hashemi","doi":"10.1109/RFIC.2016.7508270","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508270","url":null,"abstract":"High-Q resonators may be used to synthesize selective bandpass filters. Many commercial radio-frequency filters are based on coupled-resonators and realized in surface and bulk acoustic wave technologies due to the high quality factor and compact size of acoustic resonators. In this paper, it is shown that discrete-time equivalent of coupled-resonator bandpass filters may be realized using passive switched-capacitor circuits. The center frequency and the bandwidth are determined by the frequency of the switch driving signals and the capacitor values. The proposed passive filters can be linear, low noise, and compact. To further enhance the in-band linearity, an RF bootstrapping technique is proposed. Design and experimental verification of a forth-order RF BPF and a duplexer, realized in a 65nm CMOS technology, are reported.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"82 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121932133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：