With the development of the new four modernization of automobiles, the intelligent pace of the global automobile industry has accelerated. In order to meet the demand and help the development, this paper proposes a preparation method of ZnO nanofiber flexible pressure sensor based on electrospinning technology. ZnO nanofibers prepared by electrospinning are used as the pressure-sensitive active layer, which is placed on the fork guide electric layer, and then packaged with PDMS film for protection. After preparation, a series of performance tests were carried out successively. It was observed by SEM that the pressure-sensitive active layer was long fiber with uniform distribution. XRD pattern is consistent with standard card. The results of sensitivity test and human motion sensing test show that the sensor has the characteristics of high sensitivity, short response time and stable signal sensing, which can meet the actual needs and is expected to be widely used in the field of automotive intelligent cockpit.
{"title":"Preparation and Properties of ZnO Nanofiber Flexible Pressure Sensor","authors":"Zhang Chenwei, Qian Lijun, Lin Fangyuan, Shenglin Wen, Wen Zeng, Mohamed Hashem","doi":"10.1166/jno.2023.3474","DOIUrl":"https://doi.org/10.1166/jno.2023.3474","url":null,"abstract":"With the development of the new four modernization of automobiles, the intelligent pace of the global automobile industry has accelerated. In order to meet the demand and help the development, this paper proposes a preparation method of ZnO nanofiber flexible pressure sensor based on electrospinning technology. ZnO nanofibers prepared by electrospinning are used as the pressure-sensitive active layer, which is placed on the fork guide electric layer, and then packaged with PDMS film for protection. After preparation, a series of performance tests were carried out successively. It was observed by SEM that the pressure-sensitive active layer was long fiber with uniform distribution. XRD pattern is consistent with standard card. The results of sensitivity test and human motion sensing test show that the sensor has the characteristics of high sensitivity, short response time and stable signal sensing, which can meet the actual needs and is expected to be widely used in the field of automotive intelligent cockpit.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to realize accurate monitoring of wheat sowing and fertilization process and ensure efficient and reliable sowing operation, an integrated monitoring system of wheat sowing and fertilization based on variable-distance photoelectric sensor is designed. The monitoring system includes the hardware circuit of STM32F103 lower computer and the human-machine interface of the upper computer touch screen. The hardware circuit of the lower computer is composed of OH-1021 photoelectric sensor, signal shaping and amplifying circuit, encoder speed acquisition module, communication module, central processor, and peripheral circuits. The information of seed fertilizer flow and seed fertilizer shaft rotation is obtained through the reflective photoelectric sensor and rotary encoder respectively to judge the running state of sowing. The information is transmitted to the human-machine interface of the upper computer touch screen of MCGS by means of Modbus communication protocol. In the experimental species, the single seed monitoring accuracy of the monitoring system reaches 98.6%. Compared with the test results of the performance test bench of the seed metering device, the monitoring error of the monitoring system is less than 0.3%, the monitoring error of the replay rate is less than 0.6%, and the monitoring accuracy of the seeding amount is greater than 94%. The simulation results of the seed metering monitoring circuit of the lower computer show that the detection distance of the amplifier circuit to the photoelectric sensor of the seed tube changes by [4 mm, 7 mm]. The communication test results of the upper and lower computers show that the accuracy of data transmission reaches 100%, the monitoring system shows that the accuracy of fault detection exceeds 90%, and the response time of lacking, blocking, and leaking is less than 0.3 s. The monitoring system realizes high-precision monitoring of wheat seed metering and fertilization, which is helpful to improve the quality of wheat planting.
为了实现对小麦播种施肥过程的精确监控，保证播种作业的高效可靠，设计了一种基于变距光电传感器的小麦播种施肥综合监控系统。监控系统由STM32F103下位机硬件电路和上位机触摸屏人机界面组成。下位机硬件电路由o -1021光电传感器、信号整形放大电路、编码器速度采集模块、通信模块、中央处理器和外围电路组成。通过反射式光电传感器和旋转编码器分别获取种肥流量和种肥轴转动信息，判断播种的运行状态。通过Modbus通信协议将信息传输到MCGS上位机触摸屏的人机界面。在实验品种中，监测系统的单粒种子监测准确率达到98.6%。与排种装置性能试验台的试验结果对比，监测系统的监测误差小于0.3%，重播率的监测误差小于0.6%，播量的监测精度大于94%。下位机排种监测电路的仿真结果表明，放大电路到种管光电传感器的检测距离变化了[4 mm, 7 mm]。上位机和下位机通信测试结果表明，数据传输准确率达到100%，监控系统故障检测准确率超过90%，缺失、阻塞、泄漏响应时间小于0.3 s。该监测系统实现了小麦种子计量施肥的高精度监测，有助于提高小麦种植质量。
{"title":"Design and Performance Analysis of Monitoring System for Seed Metering and Fertilization of Precision Seeder Based on Photoelectric Sensor","authors":"Jia Liu, Yan Shi, Desheng Meng, Zhongfeng Liu","doi":"10.1166/jno.2023.3466","DOIUrl":"https://doi.org/10.1166/jno.2023.3466","url":null,"abstract":"In order to realize accurate monitoring of wheat sowing and fertilization process and ensure efficient and reliable sowing operation, an integrated monitoring system of wheat sowing and fertilization based on variable-distance photoelectric sensor is designed. The monitoring system includes the hardware circuit of STM32F103 lower computer and the human-machine interface of the upper computer touch screen. The hardware circuit of the lower computer is composed of OH-1021 photoelectric sensor, signal shaping and amplifying circuit, encoder speed acquisition module, communication module, central processor, and peripheral circuits. The information of seed fertilizer flow and seed fertilizer shaft rotation is obtained through the reflective photoelectric sensor and rotary encoder respectively to judge the running state of sowing. The information is transmitted to the human-machine interface of the upper computer touch screen of MCGS by means of Modbus communication protocol. In the experimental species, the single seed monitoring accuracy of the monitoring system reaches 98.6%. Compared with the test results of the performance test bench of the seed metering device, the monitoring error of the monitoring system is less than 0.3%, the monitoring error of the replay rate is less than 0.6%, and the monitoring accuracy of the seeding amount is greater than 94%. The simulation results of the seed metering monitoring circuit of the lower computer show that the detection distance of the amplifier circuit to the photoelectric sensor of the seed tube changes by [4 mm, 7 mm]. The communication test results of the upper and lower computers show that the accuracy of data transmission reaches 100%, the monitoring system shows that the accuracy of fault detection exceeds 90%, and the response time of lacking, blocking, and leaking is less than 0.3 s. The monitoring system realizes high-precision monitoring of wheat seed metering and fertilization, which is helpful to improve the quality of wheat planting.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gang Li, Hai Liang, Haifang Ren, Linhan Zhou, Mohamed Hashem
Aqueous zinc ion batteries (ZIBs) have garnered considerable interest due to their eco-friendly nature, cost-efficiency, and remarkable safety features, making them a compelling contender for next-generation energy storage systems. Within the extensive array of cathode materials investigated for ZIBs, manganese-based materials stand out for their notable attributes, including low toxicity and high voltage. Nevertheless, their widespread application has been impeded by challenges related to poor cycling stability, low electrical conductivity, and intricate energy storage mechanisms. In this study, we present a novel approach to address these challenges by synthesizing copper-doped α -MnO 2 nanosheets through a facile hydrothermal route. The resulting cathode material exhibits remarkable electrochemical properties when integrated into Zn/MnO 2 batteries. At a low current density of 0.1 Ag −1 , these batteries demonstrate an impressive reversible capacity of 445 mAh g −1 , signifying their substantial energy storage capabilities. Furthermore, even when subjected to a demanding high current density of 1 Ag −1 , they exhibit an exceptional cycling life of up to 1000 cycles, highlighting the enhanced durability of the copper-doped α -MnO 2 nanowire cathode. This research paves the way for the development of high-performance Zn/MnO 2 batteries, leveraging the advantages of manganese-based cathode materials while mitigating their inherent limitations. These findings represent a significant step forward in the development of environmentally sustainable and economically viable energy storage solutions, offering hope for a more sustainable energy future.
水性锌离子电池(zib)由于其生态友好性、成本效益和显著的安全性而引起了人们的极大兴趣，使其成为下一代储能系统的有力竞争者。在ZIBs研究的大量正极材料中，锰基材料以其显著的特性脱颖而出，包括低毒性和高电压。然而，它们的广泛应用受到循环稳定性差、电导率低和复杂的能量储存机制等挑战的阻碍。在这项研究中，我们提出了一种新的方法来解决这些挑战，即通过简单的水热途径合成掺杂铜的α - mno2纳米片。所制备的正极材料在锌/二氧化锰电池中表现出优异的电化学性能。在0.1 Ag−1的低电流密度下，这些电池显示出令人印象深刻的445 mAh g−1的可逆容量，这表明它们具有可观的能量存储能力。此外，即使受到1ag−1的高电流密度的要求，它们也表现出高达1000次循环的特殊循环寿命，突出了铜掺杂α - mno2纳米线阴极的耐久性增强。这项研究为高性能Zn/ mno2电池的发展铺平了道路，利用锰基正极材料的优势，同时减轻了其固有的局限性。这些发现代表了在开发环境可持续和经济上可行的能源存储解决方案方面迈出的重要一步，为更可持续的能源未来提供了希望。
{"title":"Enhanced High-Performance Aqueous Zinc Ion Batteries with Copper-Doped <i>α</i>-MnO<sub>2</sub> Nanosheets Cathodes","authors":"Gang Li, Hai Liang, Haifang Ren, Linhan Zhou, Mohamed Hashem","doi":"10.1166/jno.2023.3484","DOIUrl":"https://doi.org/10.1166/jno.2023.3484","url":null,"abstract":"Aqueous zinc ion batteries (ZIBs) have garnered considerable interest due to their eco-friendly nature, cost-efficiency, and remarkable safety features, making them a compelling contender for next-generation energy storage systems. Within the extensive array of cathode materials investigated for ZIBs, manganese-based materials stand out for their notable attributes, including low toxicity and high voltage. Nevertheless, their widespread application has been impeded by challenges related to poor cycling stability, low electrical conductivity, and intricate energy storage mechanisms. In this study, we present a novel approach to address these challenges by synthesizing copper-doped α -MnO 2 nanosheets through a facile hydrothermal route. The resulting cathode material exhibits remarkable electrochemical properties when integrated into Zn/MnO 2 batteries. At a low current density of 0.1 Ag −1 , these batteries demonstrate an impressive reversible capacity of 445 mAh g −1 , signifying their substantial energy storage capabilities. Furthermore, even when subjected to a demanding high current density of 1 Ag −1 , they exhibit an exceptional cycling life of up to 1000 cycles, highlighting the enhanced durability of the copper-doped α -MnO 2 nanowire cathode. This research paves the way for the development of high-performance Zn/MnO 2 batteries, leveraging the advantages of manganese-based cathode materials while mitigating their inherent limitations. These findings represent a significant step forward in the development of environmentally sustainable and economically viable energy storage solutions, offering hope for a more sustainable energy future.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As the number of flexible electronic devices grows dramatically, the energy harvesting and storage technology of flexible electronic devices also urgently needs to advance. Traditional flexible electronic devices are battery-powered, which not only suffer from short endurance and large size, but also do not meet the new era requirement of environmental protection and energy saving. Therefore, this study investigates the self-powered system in flexible electronic devices using the Triboelectric Nanogenerator (TENG) technology. The research innovatively optimizes the TENG, proposes a liquid metal triboelectric Nanogenerator (LMTENG), and optimizes the optimal path selection problem. In the test results, the optimal output power of 567.3 μ W is obtained when the contact frequency is 2 Hz for an external load of 15 MΩ. By comparing with the current TENG, the LMTENG significantly improves the optimal output power. On the other hand, the LMTENG is able to respond to a pressure of 22 kPa and maintain normal performance at 50% stretching. The study provides new ideas for improvement of triboelectric nanogenerators and also contributes to the optimization of flexible electronic devices.
{"title":"Improved Triboelectric Nanogenerators for Self-Powered Systems in Flexible Electronic Devices","authors":"Xiangxiang Luo, Feng Li, Chengfang Qiao, Fei Yuan, Chunsheng Zhou","doi":"10.1166/jno.2023.3464","DOIUrl":"https://doi.org/10.1166/jno.2023.3464","url":null,"abstract":"As the number of flexible electronic devices grows dramatically, the energy harvesting and storage technology of flexible electronic devices also urgently needs to advance. Traditional flexible electronic devices are battery-powered, which not only suffer from short endurance and large size, but also do not meet the new era requirement of environmental protection and energy saving. Therefore, this study investigates the self-powered system in flexible electronic devices using the Triboelectric Nanogenerator (TENG) technology. The research innovatively optimizes the TENG, proposes a liquid metal triboelectric Nanogenerator (LMTENG), and optimizes the optimal path selection problem. In the test results, the optimal output power of 567.3 μ W is obtained when the contact frequency is 2 Hz for an external load of 15 MΩ. By comparing with the current TENG, the LMTENG significantly improves the optimal output power. On the other hand, the LMTENG is able to respond to a pressure of 22 kPa and maintain normal performance at 50% stretching. The study provides new ideas for improvement of triboelectric nanogenerators and also contributes to the optimization of flexible electronic devices.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Researchers in the field of device research are always searching for a device that meets certain criteria, such as having low leakage and a low threshold voltage, without sacrificing performance. This pursuit has led to the development of numerous gate architectures. As a result of the enormous size of the static random-access memory (SRAM), its yield and leakage power consumption account for the majority of the chip’s total yield and leakage power consumption respectively. However, as CMOS technology continues to grow in the sub-65 nanometer domain to lower the cost of transistors and the dynamic power, it presents a number of issues on the design of SRAM. In this paper, a 6T SRAM cell with differential write and single ended read operations working in the near-threshold region is proposed. The structure is based on modifying a recently proposed 6T cell which uses high and low VTH transistors to improve the read and write stability. Also, the changes of cell parameters when the temperature rises from 40 °C to 100 °C are investigated. Finally, the write margin as well as the read and hold SNMs of the cell are studied at two supply voltages of 400 mV and 500 mV.
{"title":"Design and Analysis of Static Random-Access Memory FinFET Circuit Using Self Controlled Voltage Level Controller","authors":"VishnuVardhan Rao Gadipudi, A. Kavitha","doi":"10.1166/jno.2023.3470","DOIUrl":"https://doi.org/10.1166/jno.2023.3470","url":null,"abstract":"Researchers in the field of device research are always searching for a device that meets certain criteria, such as having low leakage and a low threshold voltage, without sacrificing performance. This pursuit has led to the development of numerous gate architectures. As a result of the enormous size of the static random-access memory (SRAM), its yield and leakage power consumption account for the majority of the chip’s total yield and leakage power consumption respectively. However, as CMOS technology continues to grow in the sub-65 nanometer domain to lower the cost of transistors and the dynamic power, it presents a number of issues on the design of SRAM. In this paper, a 6T SRAM cell with differential write and single ended read operations working in the near-threshold region is proposed. The structure is based on modifying a recently proposed 6T cell which uses high and low VTH transistors to improve the read and write stability. Also, the changes of cell parameters when the temperature rises from 40 °C to 100 °C are investigated. Finally, the write margin as well as the read and hold SNMs of the cell are studied at two supply voltages of 400 mV and 500 mV.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μ m, reaching 86.27%. The testing was done on a 7 μ m thick P-type silicon substrate with a 1 μ m thick index highly doped layer.
{"title":"The Impact of a Thick-Doping-Layer on the Charge Collection Efficiency in the P-Type Silicon Substrate of EBCMOS Devices","authors":"Xulei Qin, Qidong Shi, Feng Shi, Ye Li, De Song","doi":"10.1166/jno.2023.3475","DOIUrl":"https://doi.org/10.1166/jno.2023.3475","url":null,"abstract":"In order to improve the charge collection efficiency of EBCMOS, we predicted and experimentally confirmed the doping structure of the electron multiplication layer. In this study, we simulate the charge collection efficiency of EBCMOS using various doping strategies by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the travel paths of electrons in the electron multiplication layer. The simulation findings demonstrate that the electric field distribution in EBCMOS could be optimized by using a layered doping structure to decrease the thickness of the index strongly doped layer. The enhanced doping structure directly contributes to the enhanced charge collecting efficiency. Based on the results of the simulations, doped samples were created and evaluated. The charge collection efficiency of EBCMOS devices might be significantly increased by decreasing the thickness of the index highly doped layer to 0.1 μ m, reaching 86.27%. The testing was done on a 7 μ m thick P-type silicon substrate with a 1 μ m thick index highly doped layer.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The photoelectric sensor is an electronic device that is widely used in industrial automation processes. The device uses light to detect whether an object exists. The photoelectric sensor detection control system is the core part of the photoelectric sensor. The system includes sensor processing chip, control circuit, detection optical structure and automatic teaching control algorithm. In this research, the core control chip of the automatic teaching system and the core part of the control circuit of the short-distance photoelectric sensor are set up. The modular circuit around the above chip is designed. The optical structure of the sensor is designed by Position sensitive sensor (PSD) photoelectric accessories and triangulation method. Meanwhile, the core circuit control chip (CSP) is applied to complete the basic functions of the short-distance photoelectric sensor. Among them, the optical structure is designed to collect and process the optical signal of the detected object. Based on this, the I/V conversion is needed after collecting the optical signal by PSD, and then the signal processing is carried out. The fuzzy PID control model is used to solve the problem that the control object cannot accurately establish the mathematical model. The designed photoelectric sensor is used for the handling robot, and the D-H mathematical model of the handling robot is established. The Robotics toolbox provided by MatLab is used to simulate the movement of the robot, and the sensor is used to detect the target of the robot grabbing. The experimental results show that the sensor uploads the coordinate information of the object to be grabbed to the software interface, and the handling robot can accurately grab the object with the help of the photoelectric sensor, and place it in the corresponding position according to the appearance color of different objects to be grabbed.
{"title":"Short Distance Detection and Control System Based on Photoelectric Sensor and Its Application in Target Detection of Handling Robot","authors":"Yaping Lu","doi":"10.1166/jno.2023.3467","DOIUrl":"https://doi.org/10.1166/jno.2023.3467","url":null,"abstract":"The photoelectric sensor is an electronic device that is widely used in industrial automation processes. The device uses light to detect whether an object exists. The photoelectric sensor detection control system is the core part of the photoelectric sensor. The system includes sensor processing chip, control circuit, detection optical structure and automatic teaching control algorithm. In this research, the core control chip of the automatic teaching system and the core part of the control circuit of the short-distance photoelectric sensor are set up. The modular circuit around the above chip is designed. The optical structure of the sensor is designed by Position sensitive sensor (PSD) photoelectric accessories and triangulation method. Meanwhile, the core circuit control chip (CSP) is applied to complete the basic functions of the short-distance photoelectric sensor. Among them, the optical structure is designed to collect and process the optical signal of the detected object. Based on this, the I/V conversion is needed after collecting the optical signal by PSD, and then the signal processing is carried out. The fuzzy PID control model is used to solve the problem that the control object cannot accurately establish the mathematical model. The designed photoelectric sensor is used for the handling robot, and the D-H mathematical model of the handling robot is established. The Robotics toolbox provided by MatLab is used to simulate the movement of the robot, and the sensor is used to detect the target of the robot grabbing. The experimental results show that the sensor uploads the coordinate information of the object to be grabbed to the software interface, and the handling robot can accurately grab the object with the help of the photoelectric sensor, and place it in the corresponding position according to the appearance color of different objects to be grabbed.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Meng Liu, Xuan Zheng, Zisu Gong, Juan Li, Wenfei Liu, Renqi Gao
In this paper, a high efficiency grating coupler based on the Si thin film on Lithium Niobate (LiNbO 3 , LN) on insulator (LNOI) platform (Si-LNOI) was developed and analyzed. Two-dimensional finite-different time-domain (2D-FDTD) simulations were performed to optimize the grating structure. Those parameters (e.g., the layer thickness of SiO 2 , LNOI, and Si) and grating configuration were numerically investigated for the coupling efficiency. A coupling efficiency exceeding 98% at λ =1550 nm was obtained for TE polarization. Furthermore, the deviation tolerances of the grating period, the filling factor, the etching depth, and the layer thickness of the Si waveguide layer were studied systematically. The results indicated a high deviation tolerance. The grating coupler presented in this study could be achieved without adding fabrication steps other than etching, thereby showing high coupling efficiency and low fabrication complexity.
{"title":"A High Efficiency Grating Coupler Based on Hybrid Si-Lithium Niobate on Insulator Platform","authors":"Meng Liu, Xuan Zheng, Zisu Gong, Juan Li, Wenfei Liu, Renqi Gao","doi":"10.1166/jno.2023.3461","DOIUrl":"https://doi.org/10.1166/jno.2023.3461","url":null,"abstract":"In this paper, a high efficiency grating coupler based on the Si thin film on Lithium Niobate (LiNbO 3 , LN) on insulator (LNOI) platform (Si-LNOI) was developed and analyzed. Two-dimensional finite-different time-domain (2D-FDTD) simulations were performed to optimize the grating structure. Those parameters (e.g., the layer thickness of SiO 2 , LNOI, and Si) and grating configuration were numerically investigated for the coupling efficiency. A coupling efficiency exceeding 98% at λ =1550 nm was obtained for TE polarization. Furthermore, the deviation tolerances of the grating period, the filling factor, the etching depth, and the layer thickness of the Si waveguide layer were studied systematically. The results indicated a high deviation tolerance. The grating coupler presented in this study could be achieved without adding fabrication steps other than etching, thereby showing high coupling efficiency and low fabrication complexity.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
ULTRARAM is a low-power, high-speed, nonvolatile compound semiconductor memory device that uses triple barrier resonance tunneling (TBRT) to store electrical charge in a floating gate. Using a self-consistent solution of Schrödinger-Poisson equations, we investigated the electrical properties, transmission spectra, and electron dynamics across GaN/AlN TBRT region for the ULTRARAM application. The simulation results show that GaN/AlN exhibits tunable electrical properties by using a TBRT region of variable thickness. Successive optimization and testing of various thicknesses significantly altered the transmission across multiple barriers and localization of electrons in the quantum wells. The program/erase (P/E) operation of GaN/AlN-based ULTRARAM in a triple barrier structure is accomplished at less than 2 V. The device’s excellent nonvolatility is due to the conduction band offset (CBO) of GaN/AlN heterostructure providing a large energy barrier (2.1 eV), which prevents electrons from escaping from the floating gate. Because of the low voltage operation and small capacitance, the switching energy consumption is much lower than that of a standard floating gate Flash.
{"title":"Simulation of Gallium Nitride/Aluminum Nitride-Based Triple Barrier Quantum Region for ULTRARAM Application","authors":"Safdar Mehmood, Jinshun Bi, Mengxin Liu, Yu Zhang","doi":"10.1166/jno.2023.3468","DOIUrl":"https://doi.org/10.1166/jno.2023.3468","url":null,"abstract":"ULTRARAM is a low-power, high-speed, nonvolatile compound semiconductor memory device that uses triple barrier resonance tunneling (TBRT) to store electrical charge in a floating gate. Using a self-consistent solution of Schrödinger-Poisson equations, we investigated the electrical properties, transmission spectra, and electron dynamics across GaN/AlN TBRT region for the ULTRARAM application. The simulation results show that GaN/AlN exhibits tunable electrical properties by using a TBRT region of variable thickness. Successive optimization and testing of various thicknesses significantly altered the transmission across multiple barriers and localization of electrons in the quantum wells. The program/erase (P/E) operation of GaN/AlN-based ULTRARAM in a triple barrier structure is accomplished at less than 2 V. The device’s excellent nonvolatility is due to the conduction band offset (CBO) of GaN/AlN heterostructure providing a large energy barrier (2.1 eV), which prevents electrons from escaping from the floating gate. Because of the low voltage operation and small capacitance, the switching energy consumption is much lower than that of a standard floating gate Flash.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The classification of three-dimensional point clouds is a complex task because of its disorder and uneven density. This paper proposes that in the point-cloud preprocessing stage, the Density-Based Spatial Clustering of Algorithm with Noise (DBSCAN) is added to cluster the three-dimensional point cloud, then the clustering results are extracted through the PointNet deep learning network to extract the characteristics of the local area, thus outputting the classification results of the point cloud. This method can not only reflect the feature distribution of point cloud in three-dimensional space, but also can be divided into several classes according to the different shape features of point cloud. Verified in the ModelNet10 and ModelNet40 point cloud dataset, the classification accuracy of this method on both ModelNet10 and ModelNet40 can reach more than 92.5%.
{"title":"Research on 3D Point Cloud Classification Based on Density-Based Spatial Clustering of Algorithm with Noise","authors":"Keren He, Hang Chen","doi":"10.1166/jno.2023.3469","DOIUrl":"https://doi.org/10.1166/jno.2023.3469","url":null,"abstract":"The classification of three-dimensional point clouds is a complex task because of its disorder and uneven density. This paper proposes that in the point-cloud preprocessing stage, the Density-Based Spatial Clustering of Algorithm with Noise (DBSCAN) is added to cluster the three-dimensional point cloud, then the clustering results are extracted through the PointNet deep learning network to extract the characteristics of the local area, thus outputting the classification results of the point cloud. This method can not only reflect the feature distribution of point cloud in three-dimensional space, but also can be divided into several classes according to the different shape features of point cloud. Verified in the ModelNet10 and ModelNet40 point cloud dataset, the classification accuracy of this method on both ModelNet10 and ModelNet40 can reach more than 92.5%.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135099620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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