Qiumei Lei, G. Tian, X. Lei, Wenyao Li, Anna Su, H. Fouad, M. S. Akhtar, Tao Ji
Heterojunction photodiodes play a crucial role in various industries and daily life. They find application in fields such as photoelectric detection, aerospace, and intelligent manufacturing. In this study, we employed a series of growth processes, including physical vapor deposition techniques such as magnetron sputtering, high-temperature annealing, and hydrothermal growth, to fabricate N-doped TiO2 heterojunction diode devices with Si as a substrate material. The surface of the device exhibited a columnar array structure with rutile phase TiO2. Additionally, the doping of N element led to the bending of the energy band of TiO2 by approximately 0.2 eV, and the Fermi level also shifted to the valence band, without any effect on the band gap. The I–V characteristics varied in vacuum and air, with ideal factors (η) of 4.1 and 8.72, respectively. The study is expected to broaden the application scope of doped photodiodes.
{"title":"Analysis of Electrical Characteristics of N-Doped TiO2 and Si Heterojunction Diodes","authors":"Qiumei Lei, G. Tian, X. Lei, Wenyao Li, Anna Su, H. Fouad, M. S. Akhtar, Tao Ji","doi":"10.1166/jno.2023.3413","DOIUrl":"https://doi.org/10.1166/jno.2023.3413","url":null,"abstract":"Heterojunction photodiodes play a crucial role in various industries and daily life. They find application in fields such as photoelectric detection, aerospace, and intelligent manufacturing. In this study, we employed a series of growth processes, including physical vapor deposition\u0000 techniques such as magnetron sputtering, high-temperature annealing, and hydrothermal growth, to fabricate N-doped TiO2 heterojunction diode devices with Si as a substrate material. The surface of the device exhibited a columnar array structure with rutile phase TiO2.\u0000 Additionally, the doping of N element led to the bending of the energy band of TiO2 by approximately 0.2 eV, and the Fermi level also shifted to the valence band, without any effect on the band gap. The I–V characteristics varied in vacuum and air, with ideal factors (η)\u0000 of 4.1 and 8.72, respectively. The study is expected to broaden the application scope of doped photodiodes.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47776578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ananya Gupta, V. Srivastava, Shivangi Yadav, P. Lohia, D. K. Dwivedi, Ahmad Umar, Mohamed H. Mahmoud
Now a days there is growing demand to generate renewable energy having environment friendly materials with widely used methods exhibiting highly productive conversion of photons into electrical power. In this article, an inorganic lead-free perovskite CsSn0.5Ge0.5I3 material is utilized as an absorber layer, PTAA as hole transport layer (HTL) and SrTiO3 as electron transport layer (ETL). Parameters such as thickness of absorber layer and operating temperature of device is varied to obtain an optimized photovoltaic performance parameter. The optimized simulated result at 250 nm thickness of absorber layer for n-i-p planar structure with performances of short circuit current density of 27.7592 mA/cm2 open circuit voltage of 0.9834 V, Fill factor of 78.01% and power conversion efficiency of 21.30% are obtained, which is considerably better than the previously reported work. The proposed configuration is studied using SCAPS-1D. The proposed device confirms better performance and it could be a promising candidate for cheaper and efficient PSCs.
{"title":"Performance Enhancement of Perovskite Solar Cell Using SrTiO3 as Electron Transport Layer","authors":"Ananya Gupta, V. Srivastava, Shivangi Yadav, P. Lohia, D. K. Dwivedi, Ahmad Umar, Mohamed H. Mahmoud","doi":"10.1166/jno.2023.3407","DOIUrl":"https://doi.org/10.1166/jno.2023.3407","url":null,"abstract":"Now a days there is growing demand to generate renewable energy having environment friendly materials with widely used methods exhibiting highly productive conversion of photons into electrical power. In this article, an inorganic lead-free perovskite CsSn0.5Ge0.5I3\u0000 material is utilized as an absorber layer, PTAA as hole transport layer (HTL) and SrTiO3 as electron transport layer (ETL). Parameters such as thickness of absorber layer and operating temperature of device is varied to obtain an optimized photovoltaic performance parameter. The\u0000 optimized simulated result at 250 nm thickness of absorber layer for n-i-p planar structure with performances of short circuit current density of 27.7592 mA/cm2 open circuit voltage of 0.9834 V, Fill factor of 78.01% and power conversion efficiency of 21.30% are obtained, which\u0000 is considerably better than the previously reported work. The proposed configuration is studied using SCAPS-1D. The proposed device confirms better performance and it could be a promising candidate for cheaper and efficient PSCs.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43238105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel three-dimensional NiO was synthesized by a simple hydrothermal reaction. Characterization and gas-sensing performance of NiO with flower like spheres were tested. Owing to its three-dimensional structure, the NiO obtained large specific surface area and abundant active sites. Furthermore, the gas sensors showed the enhanced formaldehyde sensing performance obtained a gas response of 26.3 to 200 ppm formaldehyde at 350 °C, short response/recovery time as 6 and 11 s, and excellent stability. These results indicate that the three-dimensional NiO flower-like spheres play an important role on the VOCs sensing performance for practical detectors.
{"title":"Preparation of Three-Dimensional NiO Gas Sensor for Monitoring the Indoor Air of Car Cabs","authors":"Hang Sun, Yiding Hua, Zhijun Li","doi":"10.1166/jno.2023.3415","DOIUrl":"https://doi.org/10.1166/jno.2023.3415","url":null,"abstract":"A novel three-dimensional NiO was synthesized by a simple hydrothermal reaction. Characterization and gas-sensing performance of NiO with flower like spheres were tested. Owing to its three-dimensional structure, the NiO obtained large specific surface area and abundant active sites.\u0000 Furthermore, the gas sensors showed the enhanced formaldehyde sensing performance obtained a gas response of 26.3 to 200 ppm formaldehyde at 350 °C, short response/recovery time as 6 and 11 s, and excellent stability. These results indicate that the three-dimensional NiO flower-like spheres\u0000 play an important role on the VOCs sensing performance for practical detectors.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45882896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the rapid advancements in laser and detection technology, it is now possible to obtain the physical properties of particles. Analyzing the physical properties of particles can establish the foundation for further research on the optical field transmission of particles in the micron range. The transport model of unpolarized particles is constructed by applying the unpolarized transport technology, and the Stokes vector is used to calculate the transport characteristics of the particle to obtain the four-dimensional mathematical vector that represents average light intensity. A random matrix is established with the help of the Markov chain to transmit unpolarized characteristic parameters of particles and to investigate the energy levels of a vast number of particles. According to the Mie scattering theory, the spatial intensity distribution function of light scattering is calculated, and the experiment on the characteristic parameter of the particle is carried out based on the results of a photoelectric detector, and compared with the numerical simulation. By analyzing the mathematical model, the accuracy and effectiveness of the model are verified, which provides theoretical support for further research on particle physics.
{"title":"Study on the Optical Parameters of Different Particle Sizes Considering Particle Group Reflectivity","authors":"P. Xie, Lianghai Lv, Juntong Liu, Kechao Chen","doi":"10.1166/jno.2023.3404","DOIUrl":"https://doi.org/10.1166/jno.2023.3404","url":null,"abstract":"With the rapid advancements in laser and detection technology, it is now possible to obtain the physical properties of particles. Analyzing the physical properties of particles can establish the foundation for further research on the optical field transmission of particles in the micron\u0000 range. The transport model of unpolarized particles is constructed by applying the unpolarized transport technology, and the Stokes vector is used to calculate the transport characteristics of the particle to obtain the four-dimensional mathematical vector that represents average light intensity.\u0000 A random matrix is established with the help of the Markov chain to transmit unpolarized characteristic parameters of particles and to investigate the energy levels of a vast number of particles. According to the Mie scattering theory, the spatial intensity distribution function of light scattering\u0000 is calculated, and the experiment on the characteristic parameter of the particle is carried out based on the results of a photoelectric detector, and compared with the numerical simulation. By analyzing the mathematical model, the accuracy and effectiveness of the model are verified, which\u0000 provides theoretical support for further research on particle physics.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49599795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lili Wang, Mengge Wu, Ye Liu, Q. Han, H. Fouad, Hui Yang
The integration of titanium dioxide (TiO2) nanoparticles with carbon fibers leads to the formation of a stable structure and a synergistic effect, resulting in improved conductivity and electrochemical performance of lithium-ion batteries. Various techniques such as the hydrothermal method, ultrasonic mixing method, and electrospinning technology are used to achieve uniform distribution of TiO2 nanoparticles within the high-conductivity carbon fiber matrix, thereby preventing agglomeration and electrolyte corrosion. The resulting material serves as a high-performance negative electrode material for lithium-ion batteries. Compared with the TiO2/CNFs composite (U-TiO2/CNFs) prepared by directly mixing TiO2 nanoparticles into the spinning solution through ultrasonic treatment, the TiO2/CNFs composite (H–TiO2/CNFs) prepared by hydrolyzing tetrabutyl titanate (TBT) has more uniform distribution of TiO2 nanoparticles, so it shows more excellent electrochemical performance. The initial discharge specific capacity at 0.1 C is 231 mAh· g−1, and after 300 cycles at 0.2 C, there is still 204 mAh· g−1 reversible capacity, the coulombic efficiency can reach 99%.
{"title":"Synthesis and Characterizations of TiO2/Carbon Nanofibers Anode Materials for Lithium-Ion Battery Applications","authors":"Lili Wang, Mengge Wu, Ye Liu, Q. Han, H. Fouad, Hui Yang","doi":"10.1166/jno.2023.3412","DOIUrl":"https://doi.org/10.1166/jno.2023.3412","url":null,"abstract":"The integration of titanium dioxide (TiO2) nanoparticles with carbon fibers leads to the formation of a stable structure and a synergistic effect, resulting in improved conductivity and electrochemical performance of lithium-ion batteries. Various techniques such as the hydrothermal\u0000 method, ultrasonic mixing method, and electrospinning technology are used to achieve uniform distribution of TiO2 nanoparticles within the high-conductivity carbon fiber matrix, thereby preventing agglomeration and electrolyte corrosion. The resulting material serves as a high-performance\u0000 negative electrode material for lithium-ion batteries. Compared with the TiO2/CNFs composite (U-TiO2/CNFs) prepared by directly mixing TiO2 nanoparticles into the spinning solution through ultrasonic treatment, the TiO2/CNFs composite (H–TiO2/CNFs)\u0000 prepared by hydrolyzing tetrabutyl titanate (TBT) has more uniform distribution of TiO2 nanoparticles, so it shows more excellent electrochemical performance. The initial discharge specific capacity at 0.1 C is 231 mAh· g−1, and after 300 cycles at 0.2 C,\u0000 there is still 204 mAh· g−1 reversible capacity, the coulombic efficiency can reach 99%.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47686785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to control drain-induced barrier lowering (DIBL) and thus premature breakdown in enhancement-mode (E-mode) Ga2O3 MOSFETs, the effect of structure and process parameters on the breakdown voltage (VBK) and DIBL is systematically investigated. The results show that the small gate work function, the small oxide dielectric constant, the thick oxide thickness, the excessive doping concentration of the epitaxial layer, and the wide and short channel will lead to a severe DIBL effect, causing the device to breakdown prematurely. On the other hand, the thickness of the drift region has a marginal effect on the DIBL, and after excluding other structural parameters that generate a strong DIBL effect, a reasonable increase in the thickness of the drift region is beneficial to improve the VBK of devices. This study can contribute to the design of Ga2O3 MOSFETs in the application scenario with high VBK reliability requirements.
{"title":"Investigation of Breakdown in Vertical E-Mode Ga2O3 MOSFET with Different Structural Parameters","authors":"Xuanlin Li, Weijing Liu, Qinghua Li","doi":"10.1166/jno.2023.3403","DOIUrl":"https://doi.org/10.1166/jno.2023.3403","url":null,"abstract":"In order to control drain-induced barrier lowering (DIBL) and thus premature breakdown in enhancement-mode (E-mode) Ga2O3 MOSFETs, the effect of structure and process parameters on the breakdown voltage (VBK) and DIBL is systematically investigated.\u0000 The results show that the small gate work function, the small oxide dielectric constant, the thick oxide thickness, the excessive doping concentration of the epitaxial layer, and the wide and short channel will lead to a severe DIBL effect, causing the device to breakdown prematurely. On the\u0000 other hand, the thickness of the drift region has a marginal effect on the DIBL, and after excluding other structural parameters that generate a strong DIBL effect, a reasonable increase in the thickness of the drift region is beneficial to improve the VBK of devices. This study\u0000 can contribute to the design of Ga2O3 MOSFETs in the application scenario with high VBK reliability requirements.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47332759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kaimeng Zhang, Ting Li, Weidong Xu, Jie He, Haisong Li
4T CMOS image sensors are widely used in various imaging fields by virtue of low noise, high integration and low cost, but their pixel cells are manufactured with non-ideal effects causing trap energy levels and potential deviations, resulting in incomplete charge transfer of photogenerated signals, thus producing image trailing and affecting the imaging effect. Traditionally, the improvement of charge transfer efficiency is only limited to the optimization of one or two parameters or the optimization of the working state. In this paper, we propose a more systematic research method to optimize the charge transfer efficiency through five aspects: TG channel threshold voltage injection adjustment, PPD N-type impurity injection dose and injection angle, as well as TG operating voltage and FD reset voltage, respectively. The optimal process state and operating conditions are obtained: TG channel injection dose of 8.0 e12 cm−2, PPD N-type impurity injection dose of 3.0 e12 cm−2, injection angle of −4°, TG operating voltage of 2.7 V and FD reset voltage of 3.9 V, where the residual charge in the signal transfer path is minimal, and the design method in this paper has some guidance for the design of CIS pixels.
{"title":"4T Complementary Metal Oxide Semiconductor Image Sensor Charge Transfer Efficiency Optimization","authors":"Kaimeng Zhang, Ting Li, Weidong Xu, Jie He, Haisong Li","doi":"10.1166/jno.2023.3408","DOIUrl":"https://doi.org/10.1166/jno.2023.3408","url":null,"abstract":"4T CMOS image sensors are widely used in various imaging fields by virtue of low noise, high integration and low cost, but their pixel cells are manufactured with non-ideal effects causing trap energy levels and potential deviations, resulting in incomplete charge transfer of photogenerated\u0000 signals, thus producing image trailing and affecting the imaging effect. Traditionally, the improvement of charge transfer efficiency is only limited to the optimization of one or two parameters or the optimization of the working state. In this paper, we propose a more systematic research\u0000 method to optimize the charge transfer efficiency through five aspects: TG channel threshold voltage injection adjustment, PPD N-type impurity injection dose and injection angle, as well as TG operating voltage and FD reset voltage, respectively. The optimal process state and operating\u0000 conditions are obtained: TG channel injection dose of 8.0 e12 cm−2, PPD N-type impurity injection dose of 3.0 e12 cm−2, injection angle of −4°, TG operating voltage of 2.7 V and FD reset voltage of 3.9 V, where the residual\u0000 charge in the signal transfer path is minimal, and the design method in this paper has some guidance for the design of CIS pixels.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44589119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the decrease of disposable energy and the increase of social demand for power resources, photovoltaic power generation technology has been rapidly developed. The photovoltaic modules exposed outdoors for a long time accumulate serious ash, and the photovoltaic power generation efficiency is affected, so the photovoltaic modules need to be cleaned. Since various factors affecting the power generation efficiency of photovoltaic modules are difficult to quantify and mostly rely on the experience judgment of operation and maintenance personnel, this paper uses the historical operation data of photovoltaic power stations, comprehensively considers various influencing factors, establishes an intelligent cleaning data model, and combines the cleaning cost analysis to provide a basis for intelligent control of photovoltaic module cleaning robots.
{"title":"Intelligent Cleaning Strategy of Photovoltaic Solar Cell Modules","authors":"Xiaojing Jiang","doi":"10.1166/jno.2023.3414","DOIUrl":"https://doi.org/10.1166/jno.2023.3414","url":null,"abstract":"With the decrease of disposable energy and the increase of social demand for power resources, photovoltaic power generation technology has been rapidly developed. The photovoltaic modules exposed outdoors for a long time accumulate serious ash, and the photovoltaic power generation\u0000 efficiency is affected, so the photovoltaic modules need to be cleaned. Since various factors affecting the power generation efficiency of photovoltaic modules are difficult to quantify and mostly rely on the experience judgment of operation and maintenance personnel, this paper uses the historical\u0000 operation data of photovoltaic power stations, comprehensively considers various influencing factors, establishes an intelligent cleaning data model, and combines the cleaning cost analysis to provide a basis for intelligent control of photovoltaic module cleaning robots.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45386732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, poly(methyl methacrylate)/titanium dioxide (PMMA/TiO2) nanocomposite films (NFs) were prepared by a solution casting method and afterward irradiated with gamma (γ)-rays at different doses. The structural and optical properties of the PMMA/TiO2 NFs before and after γ-irradiation at different doses were analyzed by X-ray diffraction (XRD) and ultraviolet-visible (UV-vis) spectroscopy, respectively. In addition, the impact of γ-dose on the wetting properties of PMMA/TiO2 was determined by measuring the water contact angle. The XRD patterns illustrated new sharp peaks after the incorporation of TiO2 nanoparticles (NPs) into the PMMA matrix, which could be due to the interaction of TiO2 with PMMA owing to the change in the crystallographic organization. Moreover, the degree of the disorder increases with increasing γ-dose. Optical property studies revealed that the optical gap-band energy of the PMMA/TiO2 dropped to 3.92 eV at the highest γ-dose compared with pure PMMA, which was estimated to be 4.5 eV. A remarkable increase in the number of carbon atoms per cluster was observed with increasing γ-dose. The water contact angle was decreased with increasing γ-dose. The decrease in water contact angle is due to the formation of an oxidized layer and/or carbonaceous clusters on the surface of the γ-irradiated nanocomposite films. Therefore, it can be concluded that PMMA/TiO2 NFs with controlled optical gap-band energy and controlled water contact angle can be prepared by the γ-irradiation technique to be used for the fabrication of optoelectronic products.
{"title":"Effect of Gamma Radiation on the Properties of Poly(Methyl Methacrylate)/Titanium Dioxide Nanocomposite Films","authors":"B. A. El-Badry","doi":"10.1166/jno.2023.3411","DOIUrl":"https://doi.org/10.1166/jno.2023.3411","url":null,"abstract":"In this study, poly(methyl methacrylate)/titanium dioxide (PMMA/TiO2) nanocomposite films (NFs) were prepared by a solution casting method and afterward irradiated with gamma (γ)-rays at different doses. The structural and optical properties of the PMMA/TiO2\u0000 NFs before and after γ-irradiation at different doses were analyzed by X-ray diffraction (XRD) and ultraviolet-visible (UV-vis) spectroscopy, respectively. In addition, the impact of γ-dose on the wetting properties of PMMA/TiO2 was determined by measuring\u0000 the water contact angle. The XRD patterns illustrated new sharp peaks after the incorporation of TiO2 nanoparticles (NPs) into the PMMA matrix, which could be due to the interaction of TiO2 with PMMA owing to the change in the crystallographic organization. Moreover,\u0000 the degree of the disorder increases with increasing γ-dose. Optical property studies revealed that the optical gap-band energy of the PMMA/TiO2 dropped to 3.92 eV at the highest γ-dose compared with pure PMMA, which was estimated to be 4.5 eV. A remarkable\u0000 increase in the number of carbon atoms per cluster was observed with increasing γ-dose. The water contact angle was decreased with increasing γ-dose. The decrease in water contact angle is due to the formation of an oxidized layer and/or carbonaceous clusters on the\u0000 surface of the γ-irradiated nanocomposite films. Therefore, it can be concluded that PMMA/TiO2 NFs with controlled optical gap-band energy and controlled water contact angle can be prepared by the γ-irradiation technique to be used for the fabrication of\u0000 optoelectronic products.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44125437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A photonic time-interleaved analog-to-digital conversion (PTIADC) scheme by exploring optical clock distribution technology and elector-optical modulation technology is presented in this work. In the proposed PTIADC system, the interleaved sampling clocks for several channel analog-to-digital converters (ADCs) are implemented by optical clocks. A proof-of-concept experiment with a four-channel 400 MS/s PTIADC system has been achieved, and the performance has been experimentally demonstrated. Experimental results show that the proposed method can offer four-channel clock signals with low-timing jitters. The effective number of bits (ENOB) of the constructed PTIADC is ∼6 bits. Additionally, timing mismatch calibration via conveniently adjusting the length of optical delay lines produces a 26 dB spur suppression.
{"title":"A Photonic Time-Interleaved ADC Architecture Based on Optical Clock Distribution and Elector-Optical Modulation Technology","authors":"Fangxing Lyu, Zekang Xiong, Fei Li, Xin Fang","doi":"10.1166/jno.2023.3409","DOIUrl":"https://doi.org/10.1166/jno.2023.3409","url":null,"abstract":"A photonic time-interleaved analog-to-digital conversion (PTIADC) scheme by exploring optical clock distribution technology and elector-optical modulation technology is presented in this work. In the proposed PTIADC system, the interleaved sampling clocks for several channel analog-to-digital\u0000 converters (ADCs) are implemented by optical clocks. A proof-of-concept experiment with a four-channel 400 MS/s PTIADC system has been achieved, and the performance has been experimentally demonstrated. Experimental results show that the proposed method can offer four-channel clock signals\u0000 with low-timing jitters. The effective number of bits (ENOB) of the constructed PTIADC is ∼6 bits. Additionally, timing mismatch calibration via conveniently adjusting the length of optical delay lines produces a 26 dB spur suppression.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44942265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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