With the decrease of the size of semiconductor, the humidity sensor can be miniaturized and integrated by CMOS technology, and the humidity sensor chip can be made in large scale and low cost. In this paper, the technology structure of integrated capacitive humidity sensor chip is designed and fabricated by using UMC40nm semiconductor technology, it provides a reference for realizing the highly integrated technology of humidity sensor. This paper also analyzes the common micro-capacitance detection methods of humidity sensor, and combines the advantages of capacitor charge-discharge and pulse-width output stability, easy modulation and easy digital system interface, etc., a novel CMOS capacitive humidity sensor micro-capacitance detection circuit is designed by using UMC40nm semiconductor technology. The CMOS circuit can convert the change of capacitance into pulse width, in which the pulse width is linear with the capacitance difference, and can produce periodic pulse sequence and output pulse width modulation signal, it can be easily connected with microcontroller or digital system without adding A/D conversion module to increase circuit complexity and power consumption. The circuit not only can detect the micro-capacitance of humidity sensor, but also has the advantages of low power consumption, linearity, high resolution and digitalization.
{"title":"Research of Low Power Humidity Sensor Based on Complementary Metal Oxide Semiconductor Technology in Power Monitoring","authors":"Chen Xiaoyan, Yu Xian","doi":"10.1166/jno.2023.3441","DOIUrl":"https://doi.org/10.1166/jno.2023.3441","url":null,"abstract":"With the decrease of the size of semiconductor, the humidity sensor can be miniaturized and integrated by CMOS technology, and the humidity sensor chip can be made in large scale and low cost. In this paper, the technology structure of integrated capacitive humidity sensor chip is designed and fabricated by using UMC40nm semiconductor technology, it provides a reference for realizing the highly integrated technology of humidity sensor. This paper also analyzes the common micro-capacitance detection methods of humidity sensor, and combines the advantages of capacitor charge-discharge and pulse-width output stability, easy modulation and easy digital system interface, etc., a novel CMOS capacitive humidity sensor micro-capacitance detection circuit is designed by using UMC40nm semiconductor technology. The CMOS circuit can convert the change of capacitance into pulse width, in which the pulse width is linear with the capacitance difference, and can produce periodic pulse sequence and output pulse width modulation signal, it can be easily connected with microcontroller or digital system without adding A/D conversion module to increase circuit complexity and power consumption. The circuit not only can detect the micro-capacitance of humidity sensor, but also has the advantages of low power consumption, linearity, high resolution and digitalization.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135143048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High Q -factor is essential for the realization of high sensitivity photonic crystal-based sensors. The Q -factor is usually optimized for a specific refractive-index (RI) value of the ambient background. However, a small change in the RI reduces the Q value, and therefore limits the performance of the sensor to a narrow RI range. Here, we report a high-sensitivity RI sensor with a wide detection-range based on amplitude change of the fundamental mode in slotted photonic crystal nanobeam cavity. Both wavelength and amplitude sensitivity of 333 nm/RIU and 188/RIU are realized in the RI range from 1.3 to 1.6, respectively. To the best of our knowledge, this represents the widest sensing range ever reported in photonic crystal cavities. Owing to the wide sensing range and the insignificance of the Q value, this approach would find applications in various research areas in integrated lab-on-chip systems for optofluidic- and bio-sensing applications.
{"title":"High-Sensitivity and Wide Detection-Range Refractive-Index Sensor Based on Amplitude Change in Slotted Photonic Crystal Nanobeam Cavity","authors":"M. Al-Hmoud","doi":"10.1166/jno.2023.3435","DOIUrl":"https://doi.org/10.1166/jno.2023.3435","url":null,"abstract":"High Q -factor is essential for the realization of high sensitivity photonic crystal-based sensors. The Q -factor is usually optimized for a specific refractive-index (RI) value of the ambient background. However, a small change in the RI reduces the Q value, and therefore limits the performance of the sensor to a narrow RI range. Here, we report a high-sensitivity RI sensor with a wide detection-range based on amplitude change of the fundamental mode in slotted photonic crystal nanobeam cavity. Both wavelength and amplitude sensitivity of 333 nm/RIU and 188/RIU are realized in the RI range from 1.3 to 1.6, respectively. To the best of our knowledge, this represents the widest sensing range ever reported in photonic crystal cavities. Owing to the wide sensing range and the insignificance of the Q value, this approach would find applications in various research areas in integrated lab-on-chip systems for optofluidic- and bio-sensing applications.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135143049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Currently, wearable devices have higher requirements for flexible sensors based on environmental adaptability. Therefore, in order to solve the problem of low sensitivity of current flexible sensors, a new type of flexible inductance pressure sensor is proposed by introducing a ferrite film with high permeability into traditional flexible sensors. The validity and practicability of this method are verified by the research. The results show that the correlation curve of theoretical prediction shows the same trend as the actual curve. Sensor A showed the highest sensitivity of 1.61 kPa −1 ; Under different bending conditions, the sensitivity difference is 0 ∼ 0.20. When the actual external pressure is increased from 0 to 13.6 Pa, the actual change of inductance is about 0.88%. When the excitation voltage is 0.5 V, the actual inductance output value of sensor A increases from the initial 13.22 μ H to 13.26 μ H, and the actual change rate is less than 0.30%. In the application of wearable devices, the keys of wearable electronic keyboard have the maximum output voltage variation value, which is greater than 0.15 V, improving the high stability and practicality of the sensor. It is also practical in wearable human respiratory signal detection equipment. In summary, the flexible inductance pressure sensor designed in this study has high performance and practicability in the application of wearable electronic devices, which is of great significance to the development of actual wearable electronic devices.
{"title":"Flexible Inductance Pressure Sensor for Wearable Electronic Devices","authors":"Yizhu Wang, Huiqin Qu, Shu Diao","doi":"10.1166/jno.2023.3437","DOIUrl":"https://doi.org/10.1166/jno.2023.3437","url":null,"abstract":"Currently, wearable devices have higher requirements for flexible sensors based on environmental adaptability. Therefore, in order to solve the problem of low sensitivity of current flexible sensors, a new type of flexible inductance pressure sensor is proposed by introducing a ferrite film with high permeability into traditional flexible sensors. The validity and practicability of this method are verified by the research. The results show that the correlation curve of theoretical prediction shows the same trend as the actual curve. Sensor A showed the highest sensitivity of 1.61 kPa −1 ; Under different bending conditions, the sensitivity difference is 0 ∼ 0.20. When the actual external pressure is increased from 0 to 13.6 Pa, the actual change of inductance is about 0.88%. When the excitation voltage is 0.5 V, the actual inductance output value of sensor A increases from the initial 13.22 μ H to 13.26 μ H, and the actual change rate is less than 0.30%. In the application of wearable devices, the keys of wearable electronic keyboard have the maximum output voltage variation value, which is greater than 0.15 V, improving the high stability and practicality of the sensor. It is also practical in wearable human respiratory signal detection equipment. In summary, the flexible inductance pressure sensor designed in this study has high performance and practicability in the application of wearable electronic devices, which is of great significance to the development of actual wearable electronic devices.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135142790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, the novel NiO nanoflowers were synthesized by a hydrothermal method. Through X-ray diffraction and scanning electron microscopy, we can confirm that we have prepared high purity NiO and can observe that both nanoflowers are formed by self-assembly of thin nanosheets. Because of the novel morphology, sparsely NiO nanoflowers have a large specific surface area and form more enclosed micro-reaction chambers that make it difficult for gas to escape. Allowing gas molecules to be more widely distributed among the sparsely sample surface and obtained fully reaction time. Thus, the gas sensor based on compactly NiO nanoflowers exhibits excellent response and recovery characteristic.
{"title":"A Novel Hierarchical Nickle Oxide Gas Sensor for Monitoring the Volatile Organic Compounds in Car Cabs","authors":"Kuiyuan Guo, Xiaoqin Zhou, Zhiqiang Zhang, Ge Qu","doi":"10.1166/jno.2023.3444","DOIUrl":"https://doi.org/10.1166/jno.2023.3444","url":null,"abstract":"In this work, the novel NiO nanoflowers were synthesized by a hydrothermal method. Through X-ray diffraction and scanning electron microscopy, we can confirm that we have prepared high purity NiO and can observe that both nanoflowers are formed by self-assembly of thin nanosheets. Because of the novel morphology, sparsely NiO nanoflowers have a large specific surface area and form more enclosed micro-reaction chambers that make it difficult for gas to escape. Allowing gas molecules to be more widely distributed among the sparsely sample surface and obtained fully reaction time. Thus, the gas sensor based on compactly NiO nanoflowers exhibits excellent response and recovery characteristic.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135142794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Due to the unique advantages of infrared thermal imaging system compared with visible light, infrared photoelectric sensors can convert the perceived infrared light into electrical signals, which can help people to observe and analyze. Thermal imaging detection devices are developing towards miniaturization, low power consumption and high resolution. According to this requirement, the hardware design of thermal imaging detection system for infrared detection is carried out, and 640×512 uncooled infrared focal plane array is adopted. ADV7390 is selected as the video coding chip, and the low power consumption characteristics of this device are optimized. Selecting reference source+digital potentiometer+operational amplifier as analog bias scheme can make the output analog bias within a certain voltage range. The signal processing method of the detector is improved, that is, divide the voltage and form a differential signal with V REF , and then send it to the ADC chip. In the experiment, DC/DC switching power supply, LDO output voltage and ripple are tested. The results show that the measured voltage value is close to the standard voltage value, the signal voltage is basically around 2 V, and the signal voltage is lower than the signal range fluctuation, which is in line with expectations. It is used to detect transformer bushing insulation defects, and an infrared thermal imaging device is designed to capture bushing insulation defects. Combined with the feature point matching method, the infrared feature distribution of bushing insulation defects is obtained, and the infrared spectrum of the outside of transformer bushing can be obtained through continuous tracking to determine the abnormal temperature position.
{"title":"Thermal Imaging Detection Device Based on Infrared Photoelectric Sensor and Its Application in Fault Detection of Transformer Bushing Insulation","authors":"Shengcheng Li, Tao Lu, Lei Zhai, Yi Xiao","doi":"10.1166/jno.2023.3447","DOIUrl":"https://doi.org/10.1166/jno.2023.3447","url":null,"abstract":"Due to the unique advantages of infrared thermal imaging system compared with visible light, infrared photoelectric sensors can convert the perceived infrared light into electrical signals, which can help people to observe and analyze. Thermal imaging detection devices are developing towards miniaturization, low power consumption and high resolution. According to this requirement, the hardware design of thermal imaging detection system for infrared detection is carried out, and 640×512 uncooled infrared focal plane array is adopted. ADV7390 is selected as the video coding chip, and the low power consumption characteristics of this device are optimized. Selecting reference source+digital potentiometer+operational amplifier as analog bias scheme can make the output analog bias within a certain voltage range. The signal processing method of the detector is improved, that is, divide the voltage and form a differential signal with V REF , and then send it to the ADC chip. In the experiment, DC/DC switching power supply, LDO output voltage and ripple are tested. The results show that the measured voltage value is close to the standard voltage value, the signal voltage is basically around 2 V, and the signal voltage is lower than the signal range fluctuation, which is in line with expectations. It is used to detect transformer bushing insulation defects, and an infrared thermal imaging device is designed to capture bushing insulation defects. Combined with the feature point matching method, the infrared feature distribution of bushing insulation defects is obtained, and the infrared spectrum of the outside of transformer bushing can be obtained through continuous tracking to determine the abnormal temperature position.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135143053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Meijun Bao, Hong Zheng, Guowei Zhao, Jiangyang Zhang, Jiahao Shi
With the development of high-voltage electrical equipment towards the direction of higher power density and higher voltage level, it will resulting in the temperature-resistant grade of insulating dip varnish. Bismaleimide (BMI) resin used as the matrix resin of dip varnish solution is widely applied due to its good aging resistance, mechanical properties and dielectric properties. Due to the imide ring structure in BMI resin structure, the bonding energy of chemical bonds in the molecule is higher. The resin reacts less at lower temperatures, resulting in the difficulty of forming and processing. The high crosslinking density of condensates results in unsatisfactory mechanical properties of BMI resin and presents a poor toughness. Therefore, this paper uses Michael addition reaction to prepare branched resin with large free volume from binary amine and BMI resin, and explores various properties of its cured products. The results show that: Using different kinds and different contents of binary amines, its insulation performance was further improved. MT-cured sample had the best comprehensive performance, with a minimum dielectric constant of 3.24. The minimum dielectric loss of BAPP cured sample was 0.00135. The maximum volume resistivity of FDA sample was 2.46×10 15 Ω·m and the maximum breakdown field strength of BAPP sample was 29.83 kV/mm; The mechanical properties were significantly improved, and the maximum mechanical strength of the MT samples reached 174.63 MPa.
{"title":"Characterization of Heat-Resistant Insulating Impregnating Varnish Based on Bismaleimide/Diamine Copolymer","authors":"Meijun Bao, Hong Zheng, Guowei Zhao, Jiangyang Zhang, Jiahao Shi","doi":"10.1166/jno.2023.3438","DOIUrl":"https://doi.org/10.1166/jno.2023.3438","url":null,"abstract":"With the development of high-voltage electrical equipment towards the direction of higher power density and higher voltage level, it will resulting in the temperature-resistant grade of insulating dip varnish. Bismaleimide (BMI) resin used as the matrix resin of dip varnish solution is widely applied due to its good aging resistance, mechanical properties and dielectric properties. Due to the imide ring structure in BMI resin structure, the bonding energy of chemical bonds in the molecule is higher. The resin reacts less at lower temperatures, resulting in the difficulty of forming and processing. The high crosslinking density of condensates results in unsatisfactory mechanical properties of BMI resin and presents a poor toughness. Therefore, this paper uses Michael addition reaction to prepare branched resin with large free volume from binary amine and BMI resin, and explores various properties of its cured products. The results show that: Using different kinds and different contents of binary amines, its insulation performance was further improved. MT-cured sample had the best comprehensive performance, with a minimum dielectric constant of 3.24. The minimum dielectric loss of BAPP cured sample was 0.00135. The maximum volume resistivity of FDA sample was 2.46×10 15 Ω·m and the maximum breakdown field strength of BAPP sample was 29.83 kV/mm; The mechanical properties were significantly improved, and the maximum mechanical strength of the MT samples reached 174.63 MPa.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135143050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The development of electronic circuits requires that the reliability and security of circuit equipment and system operation are also increasing. In addition, due to the complexity of the operating environment, it is very important to strengthen the fault diagnosis and real-time testing technology of analog circuits in circuit systems. Based on this, this paper studied the fault diagnosis of analog circuits with Support Vector Machine (SVM), and introduced Improved Particle Swarm Optimization (IPSO) algorithm to optimize the parameters of SVM. In other words, the dynamic weight setting and factor improvement of Particle Swarm Optimization (PSO) algorithm aim to accelerate algorithm performance improvement, and information extraction and diagnosis model construction are carried out on the basis of considering circuit fault characteristics. Through the performance test and application analysis of the improved algorithm proposed in the study, the error value of the improved algorithm was basically stable at 0.0103 in the late stage of classification training, and its prediction accuracy rate was more than 80%, and the classification consumption time was less. At the same time, the accuracy of fault feature extraction results in training and test scenarios was above 94%, and the search performance was obviously better than other comparison algorithms, which effectively improved the fault diagnosis accuracy and efficiency. The IPSO algorithm model can effectively identify analog circuit fault information, and shows good information optimization performance. It has certain validity and rationality in circuit fault diagnosis and security assurance.
{"title":"Fault Diagnosis of Support Vector Machine Analog Circuits Based on Improved Particle Swarm Optimization","authors":"Junping Yang, Qinghua Song","doi":"10.1166/jno.2023.3417","DOIUrl":"https://doi.org/10.1166/jno.2023.3417","url":null,"abstract":"The development of electronic circuits requires that the reliability and security of circuit equipment and system operation are also increasing. In addition, due to the complexity of the operating environment, it is very important to strengthen the fault diagnosis and real-time testing technology of analog circuits in circuit systems. Based on this, this paper studied the fault diagnosis of analog circuits with Support Vector Machine (SVM), and introduced Improved Particle Swarm Optimization (IPSO) algorithm to optimize the parameters of SVM. In other words, the dynamic weight setting and factor improvement of Particle Swarm Optimization (PSO) algorithm aim to accelerate algorithm performance improvement, and information extraction and diagnosis model construction are carried out on the basis of considering circuit fault characteristics. Through the performance test and application analysis of the improved algorithm proposed in the study, the error value of the improved algorithm was basically stable at 0.0103 in the late stage of classification training, and its prediction accuracy rate was more than 80%, and the classification consumption time was less. At the same time, the accuracy of fault feature extraction results in training and test scenarios was above 94%, and the search performance was obviously better than other comparison algorithms, which effectively improved the fault diagnosis accuracy and efficiency. The IPSO algorithm model can effectively identify analog circuit fault information, and shows good information optimization performance. It has certain validity and rationality in circuit fault diagnosis and security assurance.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135143051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Changwang Li, Xu Wang, Gengzheng Liu, Zefei Guo, Bowang Zhao, Jiayu Liang, Ahmad Umar, Huilian Hao, Wenyao Li
The introduction of heteroatoms is beneficial to prevent the stacking of graphene and enhance the electrochemical performance of graphene-based electrode materials. In this work, the three-dimensional structure sulfur-doped graphene (SG) electrode materials were prepared by using PEDOT:PSS as sulfur source, which can form a polymer chain on the surface of the graphene oxide, thus the sulfur atoms can be successfully doped into the graphene lattice by annealing treatment. The obtained SG electrode material exhibits a high specific capacitance of 254 F g −1 at 0.5 A g −1 , which is significantly better than that of the pure reduced graphene oxide. The significant increase in specific capacitance confirms that sulfur-doped graphene has a promising future in supercapacitor applications.
杂原子的引入有利于防止石墨烯的堆积，提高石墨烯基电极材料的电化学性能。本工作以PEDOT:PSS为硫源制备了三维结构硫掺杂石墨烯(SG)电极材料，该材料可以在氧化石墨烯表面形成聚合物链，从而通过退火处理将硫原子成功掺杂到石墨烯晶格中。制备的SG电极材料在0.5 a g−1时具有254 F g−1的高比电容，明显优于纯还原氧化石墨烯材料。比电容的显著增加证实了硫掺杂石墨烯在超级电容器中的应用前景广阔。
{"title":"Three-Dimensional Architecture of Sulfur Doped Graphene for Supercapacitor","authors":"Changwang Li, Xu Wang, Gengzheng Liu, Zefei Guo, Bowang Zhao, Jiayu Liang, Ahmad Umar, Huilian Hao, Wenyao Li","doi":"10.1166/jno.2023.3442","DOIUrl":"https://doi.org/10.1166/jno.2023.3442","url":null,"abstract":"The introduction of heteroatoms is beneficial to prevent the stacking of graphene and enhance the electrochemical performance of graphene-based electrode materials. In this work, the three-dimensional structure sulfur-doped graphene (SG) electrode materials were prepared by using PEDOT:PSS as sulfur source, which can form a polymer chain on the surface of the graphene oxide, thus the sulfur atoms can be successfully doped into the graphene lattice by annealing treatment. The obtained SG electrode material exhibits a high specific capacitance of 254 F g −1 at 0.5 A g −1 , which is significantly better than that of the pure reduced graphene oxide. The significant increase in specific capacitance confirms that sulfur-doped graphene has a promising future in supercapacitor applications.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135142792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to achieve the flexibility and miniaturization of orbital angular momentum (OAM) fiber coupler, it is necessary to continuously design and optimize the base fiber to cooperate with the efficient transmission of multiplexed beam. It is more advantageous to use the photonic crystal fiber (PCF) instead of ring fiber in the coupler design. We have proposed a new fiber based on circular PCF structure to support high performance OAM modes transmission. The optimal parameters are selected to realize the stable transmission of 4 OAM mode groups with high mode quality. In the wavelength range of 1.2 μ m∼2.0 μ m, the confinement loss of low order mode is less than 10 −8 dB/m, and the mode purity is more than 81.7%. Because of its flexible structure and low loss characteristics, the proposed OAM fiber can be widely used in the design of optical fiber devices in modular division multiplexing (MDM) communication systems.
为了实现轨道角动量(OAM)光纤耦合器的柔性化和小型化，需要对基光纤进行不断的设计和优化，以配合复用波束的高效传输。在耦合器设计中，采用光子晶体光纤(PCF)比环形光纤更有优势。我们提出了一种基于圆形PCF结构的新型光纤，以支持高性能的OAM模式传输。选择最优参数，实现4个OAM模式组的高模式质量稳定传输。在1.2 μ m ~ 2.0 μ m波长范围内，低阶模的约束损耗小于10−8 dB/m，模纯度大于81.7%。该光纤结构灵活，损耗低，可广泛应用于MDM通信系统中光纤器件的设计。
{"title":"Design of New Photonic Crystal Fiber for Orbital Angular Momentum Modes Transmission","authors":"Jing-Xuan Yang, Li-Min Cheng, Wei Li","doi":"10.1166/jno.2023.3443","DOIUrl":"https://doi.org/10.1166/jno.2023.3443","url":null,"abstract":"In order to achieve the flexibility and miniaturization of orbital angular momentum (OAM) fiber coupler, it is necessary to continuously design and optimize the base fiber to cooperate with the efficient transmission of multiplexed beam. It is more advantageous to use the photonic crystal fiber (PCF) instead of ring fiber in the coupler design. We have proposed a new fiber based on circular PCF structure to support high performance OAM modes transmission. The optimal parameters are selected to realize the stable transmission of 4 OAM mode groups with high mode quality. In the wavelength range of 1.2 μ m∼2.0 μ m, the confinement loss of low order mode is less than 10 −8 dB/m, and the mode purity is more than 81.7%. Because of its flexible structure and low loss characteristics, the proposed OAM fiber can be widely used in the design of optical fiber devices in modular division multiplexing (MDM) communication systems.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135142793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to develop a dry-coupled ultrasonic transducer that can detect the internal defects of a solid rocket motor, the piezoelectric vibrator was studied by the finite element method with multiple physical field couplings. Firstly, the vibration modes and corresponding resonant frequencies of the piezoelectric vibrators at 20–300 kHz without power were solved, and it was determined that the piezoelectric vibrator can adopt the structure form of bi-laminated, series three laminated, and parallel three laminated preliminarily. Then the frequency response of the piezoelectric vibrators was analyzed according to the admittance-frequency relation. It was found that the bending vibration mode of bi-laminated and parallel three-laminated boards could be excited when the electrical load was applied to both ends. Then, it is found that the parallel three-layer laminate has a larger amplitude in the direction of thickness and a higher electromechanical conversion efficiency based on transient analysis. Therefore, the parallel three-layer laminate is finally selected as the basic form of a piezoelectric vibrator. In addition, the amplitude performance of piezoelectric vibrators with matching layers and backing is compared and analyzed, and these structures are determined not to be used in the dry coupling transducer.
{"title":"Study on Dry-Coupled Ultrasonic Transducer for Solid Rocket Motor Detection","authors":"Cai Xiaofeng, N. P. Yadav, Wang Jun","doi":"10.1166/jno.2023.3445","DOIUrl":"https://doi.org/10.1166/jno.2023.3445","url":null,"abstract":"In order to develop a dry-coupled ultrasonic transducer that can detect the internal defects of a solid rocket motor, the piezoelectric vibrator was studied by the finite element method with multiple physical field couplings. Firstly, the vibration modes and corresponding resonant frequencies of the piezoelectric vibrators at 20–300 kHz without power were solved, and it was determined that the piezoelectric vibrator can adopt the structure form of bi-laminated, series three laminated, and parallel three laminated preliminarily. Then the frequency response of the piezoelectric vibrators was analyzed according to the admittance-frequency relation. It was found that the bending vibration mode of bi-laminated and parallel three-laminated boards could be excited when the electrical load was applied to both ends. Then, it is found that the parallel three-layer laminate has a larger amplitude in the direction of thickness and a higher electromechanical conversion efficiency based on transient analysis. Therefore, the parallel three-layer laminate is finally selected as the basic form of a piezoelectric vibrator. In addition, the amplitude performance of piezoelectric vibrators with matching layers and backing is compared and analyzed, and these structures are determined not to be used in the dry coupling transducer.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135142789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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