Chengkai Jiang, Xiaoman Luo, Yongqi Zhao, Jinhua Li, Youqiao Ma
The interaction between the chiral light and matter is vital to construct on-chip multi-functional photonic circuits. The well-known spin-orbit interaction has obtained significant attention in manipulation of light with different circular polarization states. We propose a robust Y-type surface plasmon nano-waveguide structure to effectively sort spin-dependent photons. The optimized simulation results demonstrated that the waveguide modes excited by circularly polarized light with different spin states can be selectively coupled to one of two branching waveguides, with a unidirectionality efficiency up to 0.95. This research may open up new ways for the on-chip implementation of complex photonic functions, nano-photonic circuits, and nano-optical manipulation.
手性光与物质之间的相互作用对于构建片上多功能光子电路至关重要。众所周知的自旋轨道相互作用在操纵具有不同圆偏振态的光方面备受关注。我们提出了一种坚固的 Y 型表面等离子体纳米波导结构，可有效分拣自旋光子。优化模拟结果表明，不同自旋态的圆偏振光激发的波导模式可选择性地耦合到两个分支波导中的一个，单向性效率高达 0.95。这项研究为在芯片上实现复杂的光子功能、纳米光子电路和纳米光学操纵开辟了新的途径。
{"title":"Selectively sorting spin-dependent photons by Y-type plasmonic nanocircuits","authors":"Chengkai Jiang, Xiaoman Luo, Yongqi Zhao, Jinhua Li, Youqiao Ma","doi":"10.1117/1.jnp.18.016003","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016003","url":null,"abstract":"The interaction between the chiral light and matter is vital to construct on-chip multi-functional photonic circuits. The well-known spin-orbit interaction has obtained significant attention in manipulation of light with different circular polarization states. We propose a robust Y-type surface plasmon nano-waveguide structure to effectively sort spin-dependent photons. The optimized simulation results demonstrated that the waveguide modes excited by circularly polarized light with different spin states can be selectively coupled to one of two branching waveguides, with a unidirectionality efficiency up to 0.95. This research may open up new ways for the on-chip implementation of complex photonic functions, nano-photonic circuits, and nano-optical manipulation.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"256 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139752124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The escalating demand for cost-effective, flexible, and solution-processed materials in infrared (IR) photodetection presents a compelling alternative to current epitaxially grown optoelectronic technology. Colloidal quantum dots (CQDs) have emerged as a versatile platform for optoelectronic device fabrication, offering affordability, low-temperature synthesis, and scalability. Specifically, mercury chalcogenide CQDs exhibit notable intraband absorption in the mid-IR region. In this study, we explore an intraband HgSe-HgTe CQD photodetector structure tailored for mid-IR light detection. Through numerical optimization, we engineer detectivity by varying key design parameters—the film doping density, CQD diameter, and number of periods in the active layer—under different temperatures and biases. Results indicate that, at 60 K and 1 V bias, our optimally designed HgSe-HgTe CQD IR photodetector attains a peak detectivity of 8.14×1010 Jones for a film doping density of 1019 cm−3 of HgSe CQDs, 9.34×1010 Jones for HgSe CQDs with a 4.8 nm diameter, and 8.72×1010 Jones for 9 periods of HgSe-HgTe CQDs.
{"title":"Enhancing detectivity in mid-infrared photodetectors through structural parameter engineering in HgSe-HgTe colloidal quantum dots","authors":"Mehdi Khodaverdizadeh, Asghar Asgari","doi":"10.1117/1.jnp.18.016002","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016002","url":null,"abstract":"The escalating demand for cost-effective, flexible, and solution-processed materials in infrared (IR) photodetection presents a compelling alternative to current epitaxially grown optoelectronic technology. Colloidal quantum dots (CQDs) have emerged as a versatile platform for optoelectronic device fabrication, offering affordability, low-temperature synthesis, and scalability. Specifically, mercury chalcogenide CQDs exhibit notable intraband absorption in the mid-IR region. In this study, we explore an intraband HgSe-HgTe CQD photodetector structure tailored for mid-IR light detection. Through numerical optimization, we engineer detectivity by varying key design parameters—the film doping density, CQD diameter, and number of periods in the active layer—under different temperatures and biases. Results indicate that, at 60 K and 1 V bias, our optimally designed HgSe-HgTe CQD IR photodetector attains a peak detectivity of 8.14×1010 Jones for a film doping density of 1019 cm−3 of HgSe CQDs, 9.34×1010 Jones for HgSe CQDs with a 4.8 nm diameter, and 8.72×1010 Jones for 9 periods of HgSe-HgTe CQDs.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"180 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139657383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A Ge2Sb2Te5 (GST)-based microring resonator is designed and analyzed for optical switching-based applications. First, the optical properties of GST material having thicknesses of 130 to 230 nm on two commonly used substrates, i.e., silicon (Si) and silicon dioxide (SiO2), are investigated in detail. The phase-change property of GST plays an important role in tuning the resonant wavelength, absorption, and transmission loss in the ring resonator as its crystalline state has a higher refractive index (RI) compared with the amorphous state. Due to the phase-change property of the GST material, the effective RI of the waveguide core changes. A patch of GST is embedded on a ring resonator to optimize the response of light coupled in the ring and straight waveguide, that is tunable between its amorphous phase (a-GST) and crystalline (c-GST) phase. The difference in refractive indices between the two states of a phase-change material (PCM) renders it an optimal choice for the optical active devices used in light modulation and switching applications. The GST is employed as an active material in the proposed structure as it is significantly stable and results in reduced insertion loss (IL) compared with other PCMs. In the proposed design of the ring resonator, the finite-difference time-domain simulation demonstrates high extinction ratios of 16.05 and 20.50 dB at the THROUGH and DROP ports, respectively. Moreover, the low insertion losses (IL) of 0.33 dB at the THROUGH port in crystalline phase and 0.8 dB at the DROP port in amorphous phase, have been observed. The Q-factor of the ring resonator without a GST patch is 5.18×105, whereas with a GST patch, it is 5.13×105 and 1.28×105 in the amorphous and crystalline phases, respectively.
本文设计并分析了一种基于 Ge2Sb2Te5（GST）的微菱形谐振器，用于基于光学开关的应用。首先，详细研究了两种常用基底（即硅（Si）和二氧化硅（SiO2））上厚度为 130 至 230 nm 的 GST 材料的光学特性。GST 的相变特性在调节环形谐振器的谐振波长、吸收和传输损耗方面起着重要作用，因为与无定形状态相比，其晶体状态具有更高的折射率 (RI)。由于 GST 材料的相变特性，波导芯的有效 RI 发生了变化。在环形谐振器上嵌入一片 GST，以优化环形波导和直波导中耦合光的响应，该波导可在非晶相（a-GST）和晶体相（c-GST）之间进行调谐。相变材料（PCM）两种状态之间的折射率差异使其成为光调制和开关应用中光学有源器件的最佳选择。与其他 PCM 相比，GST 具有明显的稳定性，并能降低插入损耗（IL），因此在拟议结构中被用作有源材料。在环形谐振器的拟议设计中，有限差分时域仿真显示，在 THROUGH 端口和 DROP 端口的消光比分别高达 16.05 和 20.50 dB。此外，晶体相 THROUGH 端口和非晶相 DROP 端口的插入损耗（IL）分别为 0.33 dB 和 0.8 dB。无 GST 贴片的环形谐振器的 Q 因子为 5.18×105，而有 GST 贴片的非晶相和晶体相谐振器的 Q 因子分别为 5.13×105 和 1.28×105。
{"title":"Ge2Sb2Te5 patch embedded ring resonator for optical switching","authors":"Anoopshi Johari, Sanjeev Naithani, Baljinder Kaur, Abhinav Bhatnagar, Brajesh Kumar Kaushik","doi":"10.1117/1.jnp.18.016008","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016008","url":null,"abstract":"A Ge2Sb2Te5 (GST)-based microring resonator is designed and analyzed for optical switching-based applications. First, the optical properties of GST material having thicknesses of 130 to 230 nm on two commonly used substrates, i.e., silicon (Si) and silicon dioxide (SiO2), are investigated in detail. The phase-change property of GST plays an important role in tuning the resonant wavelength, absorption, and transmission loss in the ring resonator as its crystalline state has a higher refractive index (RI) compared with the amorphous state. Due to the phase-change property of the GST material, the effective RI of the waveguide core changes. A patch of GST is embedded on a ring resonator to optimize the response of light coupled in the ring and straight waveguide, that is tunable between its amorphous phase (a-GST) and crystalline (c-GST) phase. The difference in refractive indices between the two states of a phase-change material (PCM) renders it an optimal choice for the optical active devices used in light modulation and switching applications. The GST is employed as an active material in the proposed structure as it is significantly stable and results in reduced insertion loss (IL) compared with other PCMs. In the proposed design of the ring resonator, the finite-difference time-domain simulation demonstrates high extinction ratios of 16.05 and 20.50 dB at the THROUGH and DROP ports, respectively. Moreover, the low insertion losses (IL) of 0.33 dB at the THROUGH port in crystalline phase and 0.8 dB at the DROP port in amorphous phase, have been observed. The Q-factor of the ring resonator without a GST patch is 5.18×105, whereas with a GST patch, it is 5.13×105 and 1.28×105 in the amorphous and crystalline phases, respectively.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"10 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140007764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Photonic integrated circuits (PICs) have attracted great attention as promising platforms for high-data-rate communications and high-performance computing. For the PICs, photonic devices with compatible materials, compact footprint, high-performance, and sophisticated functionalities are necessary building blocks. Design optimization to implement such devices for target applications and requirements are of critical importance. In this respect, inverse design methods, including iterative optimizations and deep neural networks, have demonstrated significant advantages over the traditional simulation-based trial-and-error optimization approach. We provide an overview of the recent progress on the inverse designs for the integrated photonic devices. The principles and procedure of the inverse design methods are presented and discussed, followed by a summary of the methods employed for specific integrated photonic devices in different integrated photonics material platforms. Finally, topics of future applications and fabrication constraints for the inverse design methods are discussed.
{"title":"Recent progress on inverse design for integrated photonic devices: methodology and applications","authors":"Ruoyu Shen, Bingzhou Hong, Xiuyan Ren, Fenghe Yang, Wei Chu, Haiwen Cai, Weiping Huang","doi":"10.1117/1.jnp.18.010901","DOIUrl":"https://doi.org/10.1117/1.jnp.18.010901","url":null,"abstract":"Photonic integrated circuits (PICs) have attracted great attention as promising platforms for high-data-rate communications and high-performance computing. For the PICs, photonic devices with compatible materials, compact footprint, high-performance, and sophisticated functionalities are necessary building blocks. Design optimization to implement such devices for target applications and requirements are of critical importance. In this respect, inverse design methods, including iterative optimizations and deep neural networks, have demonstrated significant advantages over the traditional simulation-based trial-and-error optimization approach. We provide an overview of the recent progress on the inverse designs for the integrated photonic devices. The principles and procedure of the inverse design methods are presented and discussed, followed by a summary of the methods employed for specific integrated photonic devices in different integrated photonics material platforms. Finally, topics of future applications and fabrication constraints for the inverse design methods are discussed.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"2 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work presents a refractive index sensor based on Bloch surface waves (BSW) with high sensitivity and quality factor (Q). The sensor utilizes a one-dimensional photonic crystal TiO2/MgF2 as a distributed Bragg reflector and employs a LiNbO3 thin film as the top defect layer to excite BSW through a Kretschmann prism. Numerical simulations using the rigorous coupled wave analysis method are conducted to explore various prism configurations, revealing that low refractive index prisms yield superior performance for BSW sensors. The designed sensor achieves a sensitivity of 1600 nm/RIU (or 938 °/RIU) and is analyzed for its full-width at half-maximum and quality factor (Q), with the sensor’s Q value reaching 8000 /RIU (or 13595 /RIU). Through manufacturing error analysis, it was found that the designed sensor has good mechanical robustness, is easy to manufacture, and is also easy to integrate. The results show that the LiNbO3 nonlinear tunable material has great application prospects in the field of refractive index sensors.
{"title":"Design and optimization of Bloch surface wave sensor with high sensitivity and quality factor using LiNbO3","authors":"Yuanshi Wei, Jiakang Shi, Zhen Liu, Daohan Ge, Liqiang Zhang","doi":"10.1117/1.jnp.18.016001","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016001","url":null,"abstract":"This work presents a refractive index sensor based on Bloch surface waves (BSW) with high sensitivity and quality factor (Q). The sensor utilizes a one-dimensional photonic crystal TiO2/MgF2 as a distributed Bragg reflector and employs a LiNbO3 thin film as the top defect layer to excite BSW through a Kretschmann prism. Numerical simulations using the rigorous coupled wave analysis method are conducted to explore various prism configurations, revealing that low refractive index prisms yield superior performance for BSW sensors. The designed sensor achieves a sensitivity of 1600 nm/RIU (or 938 °/RIU) and is analyzed for its full-width at half-maximum and quality factor (Q), with the sensor’s Q value reaching 8000 /RIU (or 13595 /RIU). Through manufacturing error analysis, it was found that the designed sensor has good mechanical robustness, is easy to manufacture, and is also easy to integrate. The results show that the LiNbO3 nonlinear tunable material has great application prospects in the field of refractive index sensors.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"25 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139555227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
JNP thanks the reviewers who served the journal in 2023.
期刊感谢 2023 年为期刊服务的审稿人。
{"title":"2023 List of Reviewers","authors":"","doi":"10.1117/1.jnp.18.010102","DOIUrl":"https://doi.org/10.1117/1.jnp.18.010102","url":null,"abstract":"JNP thanks the reviewers who served the journal in 2023.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"40 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139422137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ming Xu, Longqi He, Bo Yang, Yiting Wei, Jianhua Ji, Maoguo Cai
At present, an all optical high-order tunable ordinary differential equation (ODE) solver is very difficult to implement. A novel all-optical first to third order linear ODEs solutions with tunable constant coefficients using double Sagnac rings coupled Mach–Zehnder-interferometer (DSMZI) on silicon waveguide chips are proposed. The structural composition and size of the DSMZI have been designed, and the working principles of its first to third order ODEs solutions have been derived. By varying the input electric heating power of the thermal-optical phase shifters of the individual arms of the MZI, the constant-coefficient of the differential equation can be simply tuned in large scope. It is demonstrated that the constant coefficient k ranges from 0.0015/ps to 0.092/ps for the first-order ODE. The constant coefficient p of the second-order ODE solver can be continuously tuned from 0.013/ps to 0.174/ps, correspondingly with the q varying from 0.00004225/ps2 to 0.007569/ps2. Three constant coefficients u, v, and w of the third-order ODE can be continuously tuned from 0.105/ps to 0.252/ps, 0.003675/ps2 to 0.021168/ps2, and 0.00004288/ps3 to 0.0005927/ps3, respectively. The all-optical ODE solvers with the DSMZI can be easily integrated with other optical components based on silicon on insulator, which can provide a path for future artificial intelligence or big data processing systems in optical computing on silicon waveguide chips.
{"title":"All optical third order tunable ordinary differential equation solutions based on double Sagnac rings coupled MZI on silicon waveguide chips","authors":"Ming Xu, Longqi He, Bo Yang, Yiting Wei, Jianhua Ji, Maoguo Cai","doi":"10.1117/1.jnp.17.046004","DOIUrl":"https://doi.org/10.1117/1.jnp.17.046004","url":null,"abstract":"At present, an all optical high-order tunable ordinary differential equation (ODE) solver is very difficult to implement. A novel all-optical first to third order linear ODEs solutions with tunable constant coefficients using double Sagnac rings coupled Mach–Zehnder-interferometer (DSMZI) on silicon waveguide chips are proposed. The structural composition and size of the DSMZI have been designed, and the working principles of its first to third order ODEs solutions have been derived. By varying the input electric heating power of the thermal-optical phase shifters of the individual arms of the MZI, the constant-coefficient of the differential equation can be simply tuned in large scope. It is demonstrated that the constant coefficient k ranges from 0.0015/ps to 0.092/ps for the first-order ODE. The constant coefficient p of the second-order ODE solver can be continuously tuned from 0.013/ps to 0.174/ps, correspondingly with the q varying from 0.00004225/ps2 to 0.007569/ps2. Three constant coefficients u, v, and w of the third-order ODE can be continuously tuned from 0.105/ps to 0.252/ps, 0.003675/ps2 to 0.021168/ps2, and 0.00004288/ps3 to 0.0005927/ps3, respectively. The all-optical ODE solvers with the DSMZI can be easily integrated with other optical components based on silicon on insulator, which can provide a path for future artificial intelligence or big data processing systems in optical computing on silicon waveguide chips.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"77 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139055038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Microresonators have been extensively studied in integrated photonics over the past two decades. However, the thermal frequency drift of a resonator limits its applications in practice. Athermal microresonators, as a passive solution, have become highly attractive. We propose two types of broadband athermal waveguides, with three zero-thermal-drift wavelengths achieved through mode anti-crossing effect, for the first time. For the polymer-coated waveguide, the effective thermo-optical coefficient (TOC) has a variation of ±1.5×10−6/K from 1350 to 1790 nm. For the TiO2-coated waveguide, the effective TOC has a variation of ±1.5×10−6/K from 1510 to 2090 nm. Over such a wide band of 440 or 580 nm, both the athermal microring resonators show excellent athermal property of <1 pm/K. The broadband athermal characteristics of the resonators would enable a wide variety of applications, e.g., wavelength-division multiplexing filters, modulators, lasers, sensors, and nonlinear optical sources.
{"title":"Athermal waveguides and resonators with three zero-thermal-drift wavelengths","authors":"Peishan Han, Liuqing He, Lijuan Xu, Lin Zhang","doi":"10.1117/1.jnp.17.046005","DOIUrl":"https://doi.org/10.1117/1.jnp.17.046005","url":null,"abstract":"Microresonators have been extensively studied in integrated photonics over the past two decades. However, the thermal frequency drift of a resonator limits its applications in practice. Athermal microresonators, as a passive solution, have become highly attractive. We propose two types of broadband athermal waveguides, with three zero-thermal-drift wavelengths achieved through mode anti-crossing effect, for the first time. For the polymer-coated waveguide, the effective thermo-optical coefficient (TOC) has a variation of ±1.5×10−6/K from 1350 to 1790 nm. For the TiO2-coated waveguide, the effective TOC has a variation of ±1.5×10−6/K from 1510 to 2090 nm. Over such a wide band of 440 or 580 nm, both the athermal microring resonators show excellent athermal property of <1 pm/K. The broadband athermal characteristics of the resonators would enable a wide variety of applications, e.g., wavelength-division multiplexing filters, modulators, lasers, sensors, and nonlinear optical sources.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139069699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A one-dimensional multilayer structure consisting of two symmetric parts with defect layers is designed, and properties of the multiple nonreciprocal transmission are investigated due to symmetrically distributed magneto-optic layers with opposite magnetic fields in composite structures. The transmission coefficient and energy band diagram of the system are obtained based on transfer matrix method. The numerical results show that there are three pairs of nonreciprocal dispersive curves with different modes in a certain bandgap. The influence of the thickness of defect layer and incident angle on nonreciprocal frequencies is also discussed. The multiple nonreciprocal transmission could in turn be potentially useful in optical isolators and optical resonators.
{"title":"Multiple nonreciprocal transmission based on defect modes of photonic crystals","authors":"Yu Shen, Xiaomeng Zhang, Guanxia Yu, Xin Chen, Haodong Wang, Guangyao Yuan","doi":"10.1117/1.jnp.17.046002","DOIUrl":"https://doi.org/10.1117/1.jnp.17.046002","url":null,"abstract":"A one-dimensional multilayer structure consisting of two symmetric parts with defect layers is designed, and properties of the multiple nonreciprocal transmission are investigated due to symmetrically distributed magneto-optic layers with opposite magnetic fields in composite structures. The transmission coefficient and energy band diagram of the system are obtained based on transfer matrix method. The numerical results show that there are three pairs of nonreciprocal dispersive curves with different modes in a certain bandgap. The influence of the thickness of defect layer and incident angle on nonreciprocal frequencies is also discussed. The multiple nonreciprocal transmission could in turn be potentially useful in optical isolators and optical resonators.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"284 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135475210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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