Ziliang Pang, Weiwei Cao, Jinkun Zheng, YongLin Bai
Abstract. Surface acoustic waves (SAWs) with a strong enough piezoelectric field can capture and transport electrons and holes. The presence of SAWs and their photo-generated carriers’ transport properties in the GaAs/AlGaAs quantum well (QW) is a potential scheme to achieve single photon sources and single photon detectors. We numerically solve the system of coupled Schrödinger and Poisson equations and the carriers’ radiative lifetime. A finite difference method of two-dimensional was developed as a conventional approach to the theoretical understanding of the presence in the QW through Python programs. The features of carriers’ radiative lifetime are discussed as functions of the SAW wavelengths and SAW amplitudes. The spatial separation and radiative lifetime extension of the electrons and holes in the SAW-driven QW was explained by the method.
{"title":"Numerical analysis of surface acoustic wave driven carriers transport in GaAs/AlGaAs quantum well","authors":"Ziliang Pang, Weiwei Cao, Jinkun Zheng, YongLin Bai","doi":"10.1117/1.JNP.17.036010","DOIUrl":"https://doi.org/10.1117/1.JNP.17.036010","url":null,"abstract":"Abstract. Surface acoustic waves (SAWs) with a strong enough piezoelectric field can capture and transport electrons and holes. The presence of SAWs and their photo-generated carriers’ transport properties in the GaAs/AlGaAs quantum well (QW) is a potential scheme to achieve single photon sources and single photon detectors. We numerically solve the system of coupled Schrödinger and Poisson equations and the carriers’ radiative lifetime. A finite difference method of two-dimensional was developed as a conventional approach to the theoretical understanding of the presence in the QW through Python programs. The features of carriers’ radiative lifetime are discussed as functions of the SAW wavelengths and SAW amplitudes. The spatial separation and radiative lifetime extension of the electrons and holes in the SAW-driven QW was explained by the method.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"17 1","pages":"036010 - 036010"},"PeriodicalIF":1.5,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48909763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jie Liao, Dong Zhang, Yuefeng Wang, Pengjun Wang, Qiang Fu, Shixun Dai, Weiwei Chen, Lingxiao Ma, Jun Li, T. Dai, Jianyi Yang
Abstract. A long-wave infrared (LWIR) on-chip gas sensor based on subwavelength grating waveguide is proposed. By optimizing the grating structural parameters, the corresponding slow-light region is overlapped with the absorption spectrum of methane, which can greatly improve the light–gas interaction to achieve excellent sensing performance. The presented waveguide gas sensor is designed to operate at the wavelength of 7.70 μm, which corresponds to the methane absorption peak in the LWIR and exhibits a high slow-light enhancement factor of 7.514. The related sensitivity and limit of detection are, respectively, 26.54393 and 0.1327 ppm.
{"title":"On-chip long-wave infrared gas sensor based on subwavelength grating waveguide","authors":"Jie Liao, Dong Zhang, Yuefeng Wang, Pengjun Wang, Qiang Fu, Shixun Dai, Weiwei Chen, Lingxiao Ma, Jun Li, T. Dai, Jianyi Yang","doi":"10.1117/1.JNP.17.036011","DOIUrl":"https://doi.org/10.1117/1.JNP.17.036011","url":null,"abstract":"Abstract. A long-wave infrared (LWIR) on-chip gas sensor based on subwavelength grating waveguide is proposed. By optimizing the grating structural parameters, the corresponding slow-light region is overlapped with the absorption spectrum of methane, which can greatly improve the light–gas interaction to achieve excellent sensing performance. The presented waveguide gas sensor is designed to operate at the wavelength of 7.70 μm, which corresponds to the methane absorption peak in the LWIR and exhibits a high slow-light enhancement factor of 7.514. The related sensitivity and limit of detection are, respectively, 26.54393 and 0.1327 ppm.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"17 1","pages":"036011 - 036011"},"PeriodicalIF":1.5,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48761704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Liang, Xudong Tang, Wangyang Ding, Xinli Liu, Nan Chen, Xiang Lu
Abstract. The optical absorption properties of the two-dimensional (2D) MoSi2N4 monolayer is often a focus of research. By semi doping Cr and W at M sites, the influence of M-site atoms on the optical absorption properties of MA2Z4 series materials was investigated. The results show that the atomic layer spacing of 2D materials has some changes after the semi doping of the Cr and W elements, but the entire crystal structure is not significantly different. The semi doping of Cr atoms makes the MoSi2N4 monolayer have an additional absorption peak, the highest absorption peak of the Mo0.5Cr0.5Si2N4 monolayer has a large red shift corresponding to the wavelength, and the width of the absorption peak is also greatly improved. The semi doping of W element results in a red shift of the strongest absorption peak and an increase of the maximum absorption intensity of the Mo0.5W0.5Si2N4 monolayer.
{"title":"Calculation of the excited states of two-dimensional MoSi2N4 layered material semi doped with Cr and W respectively","authors":"C. Liang, Xudong Tang, Wangyang Ding, Xinli Liu, Nan Chen, Xiang Lu","doi":"10.1117/1.JNP.17.036007","DOIUrl":"https://doi.org/10.1117/1.JNP.17.036007","url":null,"abstract":"Abstract. The optical absorption properties of the two-dimensional (2D) MoSi2N4 monolayer is often a focus of research. By semi doping Cr and W at M sites, the influence of M-site atoms on the optical absorption properties of MA2Z4 series materials was investigated. The results show that the atomic layer spacing of 2D materials has some changes after the semi doping of the Cr and W elements, but the entire crystal structure is not significantly different. The semi doping of Cr atoms makes the MoSi2N4 monolayer have an additional absorption peak, the highest absorption peak of the Mo0.5Cr0.5Si2N4 monolayer has a large red shift corresponding to the wavelength, and the width of the absorption peak is also greatly improved. The semi doping of W element results in a red shift of the strongest absorption peak and an increase of the maximum absorption intensity of the Mo0.5W0.5Si2N4 monolayer.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"17 1","pages":"036007 - 036007"},"PeriodicalIF":1.5,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42200204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract. The nanocomposite, poly(3-hexylthiophene-2,5-diyl) (P3HT)–graphene/molybdenum disulfide (MoS2), was for the first time fabricated by the pulse laser ablation (PLA) method with different numbers of laser pulses deposited onto a porous silicon (PSi) substrate using the drop-casting technique. Nanocrystalline PSi films are prepared by electrochemical etching of a P-type silicon wafer. The optical properties, transmission electron microscope (TEM), and photodetector properties were studied. Optical measurements confirmed that the energy gap decreases from 2.03 to 1.87 eV with the increasing number of laser pulses for graphene and MoS2. This decrease in the energy gap was attributed to the increase in graphene and its combination with molybdenum. Due to the higher electrical conductivity of the hybrid material, the MoS2 leads to reduce the band gap. From the TEM images, it was found that the average size of the particles was between 3.1 and 20.8 nm depending on increasing the number of laser pulses for both graphene and MoS2 with hemispherical particle shapes. The Ag / PSi / P3HT − G / MoS2 / Ag photodetector was fabricated for all samples prepared to characterize the effect of laser pulses number for graphene and MoS2 on the photodetector performance. The maximum value of the specific response, specific detection, and quantum efficiency was 0.35 A / W, 5.1 × 1012 cm Hz1/2 W − 1, and 49.2% at 900 nm due to the absorption edge of silicon around 0.23 A / W, 3.3 × 1012 cm Hz1/2 W − 1, and 38.9% at 760 nm due to the absorption edge of P3HT − G / MoS2 NPS. The results indicate that the PLA method successfully fabricated the P3HT − G / MoS2 nanocomposites and that the resulting product exhibited high values in responsivity, detectivity, and quantum efficiency. Additionally, it appears that the nanocomposites may have enhanced the same parameters of the PSi photodetector.
摘要首次通过脉冲激光烧蚀（PLA）方法制备了聚（3-己基噻吩-2,5-二基）（P3HT）-石墨烯/二硫化钼（MoS2）纳米复合材料，使用液滴铸造技术将不同数量的激光脉冲沉积在多孔硅（PSi）衬底上。通过电化学蚀刻P型硅片制备了纳米晶体PSi薄膜。对其光学性能、透射电子显微镜（TEM）和光电探测器的性能进行了研究。光学测量证实，随着石墨烯和MoS2的激光脉冲数量的增加，能隙从2.03 eV减小到1.87 eV。能隙的减小归因于石墨烯及其与钼的结合的增加。由于混合材料的电导率较高，MoS2导致带隙减小。根据TEM图像，发现颗粒的平均尺寸在3.1和20.8nm之间，这取决于具有半球形颗粒形状的石墨烯和MoS2的激光脉冲数量的增加。Ag / PSi / P3HT − G / 二硫化钼 / 制备了所有样品的Ag光电探测器，以表征石墨烯和MoS2的激光脉冲数对光电探测器性能的影响。比响应、比检测和量子效率的最大值为0.35 A. / W、 5.1 × 1012 厘米 Hz1/2 W − 1和49.2% A. / W、 3.3 × 1012 厘米 Hz1/2 W − 1和38.9% − G / MoS2 NPS。结果表明，PLA方法成功地制备了P3HT − G / MoS2纳米复合材料，并且所得产物在响应度、探测率和量子效率方面表现出高值。此外，纳米复合材料可能增强了PSi光电探测器的相同参数。
{"title":"Synthesis and characterization of thin films of P3HT − G/MoS2 nanocomposites in photodetectors applications","authors":"N. Obaid, A. Al-Nafiey, G. Al-Dahash","doi":"10.1117/1.JNP.17.036009","DOIUrl":"https://doi.org/10.1117/1.JNP.17.036009","url":null,"abstract":"Abstract. The nanocomposite, poly(3-hexylthiophene-2,5-diyl) (P3HT)–graphene/molybdenum disulfide (MoS2), was for the first time fabricated by the pulse laser ablation (PLA) method with different numbers of laser pulses deposited onto a porous silicon (PSi) substrate using the drop-casting technique. Nanocrystalline PSi films are prepared by electrochemical etching of a P-type silicon wafer. The optical properties, transmission electron microscope (TEM), and photodetector properties were studied. Optical measurements confirmed that the energy gap decreases from 2.03 to 1.87 eV with the increasing number of laser pulses for graphene and MoS2. This decrease in the energy gap was attributed to the increase in graphene and its combination with molybdenum. Due to the higher electrical conductivity of the hybrid material, the MoS2 leads to reduce the band gap. From the TEM images, it was found that the average size of the particles was between 3.1 and 20.8 nm depending on increasing the number of laser pulses for both graphene and MoS2 with hemispherical particle shapes. The Ag / PSi / P3HT − G / MoS2 / Ag photodetector was fabricated for all samples prepared to characterize the effect of laser pulses number for graphene and MoS2 on the photodetector performance. The maximum value of the specific response, specific detection, and quantum efficiency was 0.35 A / W, 5.1 × 1012 cm Hz1/2 W − 1, and 49.2% at 900 nm due to the absorption edge of silicon around 0.23 A / W, 3.3 × 1012 cm Hz1/2 W − 1, and 38.9% at 760 nm due to the absorption edge of P3HT − G / MoS2 NPS. The results indicate that the PLA method successfully fabricated the P3HT − G / MoS2 nanocomposites and that the resulting product exhibited high values in responsivity, detectivity, and quantum efficiency. Additionally, it appears that the nanocomposites may have enhanced the same parameters of the PSi photodetector.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"17 1","pages":"036009 - 036009"},"PeriodicalIF":1.5,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44249520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ricardo A. Fiallo, Chengzhi Li, A. Lakhtakia, M. Horn
Abstract. Temporally periodic physical vapor deposition (TP-PVD) is commonly used to fabricate Bragg mirrors on planar surfaces. These devices are notionally of infinite transverse extent and homogeneity, but they have periodically nonhomogeneous electromagnetic constitutions in the thickness direction. Undertaking TP-PVD in two different formats, we found that the Bragg phenomenon can be avoided in certain thin-film applications by undertaking TP-PVD on surfaces roughened randomly on the scale of the wavelength.
{"title":"On temporally periodic physical vapor deposition on random rough surfaces","authors":"Ricardo A. Fiallo, Chengzhi Li, A. Lakhtakia, M. Horn","doi":"10.1117/1.JNP.17.036005","DOIUrl":"https://doi.org/10.1117/1.JNP.17.036005","url":null,"abstract":"Abstract. Temporally periodic physical vapor deposition (TP-PVD) is commonly used to fabricate Bragg mirrors on planar surfaces. These devices are notionally of infinite transverse extent and homogeneity, but they have periodically nonhomogeneous electromagnetic constitutions in the thickness direction. Undertaking TP-PVD in two different formats, we found that the Bragg phenomenon can be avoided in certain thin-film applications by undertaking TP-PVD on surfaces roughened randomly on the scale of the wavelength.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"125 8","pages":"036005 - 036005"},"PeriodicalIF":1.5,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41259998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chenbo Wang, Zhuoqun Li, Dan Liang, Zhe Yin, Sahibzada Muhammad Zaheer, Gang Yang, Lingguang Liu, F. Bian, Zhaopeng Xu
Abstract. High-efficiency and ultrathin crystalline silicon solar cells (SCs) with a frequency upconversion (UC) layer and an array of silver nanohemispheres were presented. The light-trapping performances of SCs embedded with different volume ratios and radii of Ag nanohemispheres were systematically studied by finite-element analysis. The simulation results show that the short-circuit current density of the SCs and the light-field intensity in the UC layer can be significantly improved by adjusting the structural parameters of Ag nanohemispheres. The short-circuit current density of the structured SCs have been improved by 16.48% and the light-field intensity in the UC layer has been increased by 2.65 times compared to that of planar SCs. Additionally, the UC effects on the power conversion efficiency of the SCs were also investigated. The presented model will serve as the basis for further preparations of high-efficiency ultrathin crystalline SCs.
{"title":"Light absorption enhancement of ultrathin crystalline silicon solar cells with frequency upconversion layer using silver hemisphere nanoparticles","authors":"Chenbo Wang, Zhuoqun Li, Dan Liang, Zhe Yin, Sahibzada Muhammad Zaheer, Gang Yang, Lingguang Liu, F. Bian, Zhaopeng Xu","doi":"10.1117/1.JNP.17.036001","DOIUrl":"https://doi.org/10.1117/1.JNP.17.036001","url":null,"abstract":"Abstract. High-efficiency and ultrathin crystalline silicon solar cells (SCs) with a frequency upconversion (UC) layer and an array of silver nanohemispheres were presented. The light-trapping performances of SCs embedded with different volume ratios and radii of Ag nanohemispheres were systematically studied by finite-element analysis. The simulation results show that the short-circuit current density of the SCs and the light-field intensity in the UC layer can be significantly improved by adjusting the structural parameters of Ag nanohemispheres. The short-circuit current density of the structured SCs have been improved by 16.48% and the light-field intensity in the UC layer has been increased by 2.65 times compared to that of planar SCs. Additionally, the UC effects on the power conversion efficiency of the SCs were also investigated. The presented model will serve as the basis for further preparations of high-efficiency ultrathin crystalline SCs.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"17 1","pages":"036001 - 036001"},"PeriodicalIF":1.5,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48023803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dongfei Zheng, Dejun Kong, W. Liang, Pengjun Wang, Qiang Fu, Weiwei Chen, S. Dai, Jun Li, T. Dai, Jianyi Yang
Abstract. A non-volatile flexible-grid wavelength-selective switch (NVFGWSS) based on subwavelength-grating-Ge2Sb2Te5 (GST)-assisted silicon microring resonators (MRRs) is proposed. By controlling the state of the subwavelength grating GST and the phase shifter, the transmission spectra of the designed subwavelength-grating-GST-assisted silicon MRRs are combined, and thus tunable bandwidths (BWs) are generated as required. A comprehensive analysis of the presented subwavelength-grating-GST-assisted silicon MRRs and the corresponding NVFGWSS is given. Numerical simulations reveal that, for the designed module comprising a subwavelength-grating-GST-assisted silicon MMR and an ellipse-based crossing waveguide, its maximum crosstalk (CT) and insertion loss are −18.08 and 0.50 dB, respectively. For the designed NVFGWSS, as the channel spacing is 0.8 nm, the in-band ripple and CT are <0.895 and −13.006 dB, respectively, and the 3-dB BW changes from 0.51 to 3.2 nm.
{"title":"Non-volatile flexible-grid wavelength-selective switch using subwavelength-grating-Ge2Sb2Te5-assisted silicon microring resonators","authors":"Dongfei Zheng, Dejun Kong, W. Liang, Pengjun Wang, Qiang Fu, Weiwei Chen, S. Dai, Jun Li, T. Dai, Jianyi Yang","doi":"10.1117/1.JNP.17.036008","DOIUrl":"https://doi.org/10.1117/1.JNP.17.036008","url":null,"abstract":"Abstract. A non-volatile flexible-grid wavelength-selective switch (NVFGWSS) based on subwavelength-grating-Ge2Sb2Te5 (GST)-assisted silicon microring resonators (MRRs) is proposed. By controlling the state of the subwavelength grating GST and the phase shifter, the transmission spectra of the designed subwavelength-grating-GST-assisted silicon MRRs are combined, and thus tunable bandwidths (BWs) are generated as required. A comprehensive analysis of the presented subwavelength-grating-GST-assisted silicon MRRs and the corresponding NVFGWSS is given. Numerical simulations reveal that, for the designed module comprising a subwavelength-grating-GST-assisted silicon MMR and an ellipse-based crossing waveguide, its maximum crosstalk (CT) and insertion loss are −18.08 and 0.50 dB, respectively. For the designed NVFGWSS, as the channel spacing is 0.8 nm, the in-band ripple and CT are <0.895 and −13.006 dB, respectively, and the 3-dB BW changes from 0.51 to 3.2 nm.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"17 1","pages":"036008 - 036008"},"PeriodicalIF":1.5,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49393182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new light-responsive arylazopyrazole (AAP) containing a polymer matrix thin film is fabricated by spin-coating different concentrations of the AAP azo dye into the polydimethylsiloxane (PDMS) polymer at 150°C. The new AAP molecular switch was also used to fabricate a solid-state PDMS-AAP waveguide by contact lithography and soft replica modeling methods in the micrometer scale. The refractive index of the spin-coated photoswitchable material can be modulated via the reversible trans-to-cis photoisomerization behavior of the AAP unit using different concentrations. When 0.01 M solution of the AAP unit was used, the refractive of the composite was 2.32 in the trans state and dropped to 1.85 in the cis state in the operating wavelength of 340 nm. At higher concentrations of 0.020 and 0.03 M, a wide refractive index tuning is achieved under the same wavelength. In 0.030 M, the refractive index was 2.65 for the trans state and 2.0 for the cis state. The results suggest that the increase in refractive index tuning is related to the concentration of the AAP unit of the composite film. Theoretically, the spectral properties of the composite film are also simulated with two methods: (1) the Maxwell equations and (2) the frequency dependent finite element, showing excellent agreement for the different propagation modes of the proposed waveguide for regulated signals of 365/525 nm wavelengths. Furthermore, the photoisomerization of the PDMS-AAP thin film is analyzed with UV–vis spectroscopy to demonstrate the isomerization responses of the AAP moiety in the solid state. In addition, preliminary photomechanical actuation properties of the composite film have been investigated. The PDMS-AAP waveguide described provides a new approach for optically tunable photonics applications in the UV–visible region.
{"title":"Numerical analysis of the propagation modes of photo-switching PDMS-arylazopyrazole optical waveguide and thin-film spectroscopic characterization","authors":"Golsa Mirbagheri, Ikemefuna Uba, Kesete Ghebreyessus, Uwe Hömmerich, Seth Fraden, Michael Stehnach, Demetris Geddis","doi":"10.1117/1.jnp.17.026014","DOIUrl":"https://doi.org/10.1117/1.jnp.17.026014","url":null,"abstract":"A new light-responsive arylazopyrazole (AAP) containing a polymer matrix thin film is fabricated by spin-coating different concentrations of the AAP azo dye into the polydimethylsiloxane (PDMS) polymer at 150°C. The new AAP molecular switch was also used to fabricate a solid-state PDMS-AAP waveguide by contact lithography and soft replica modeling methods in the micrometer scale. The refractive index of the spin-coated photoswitchable material can be modulated via the reversible trans-to-cis photoisomerization behavior of the AAP unit using different concentrations. When 0.01 M solution of the AAP unit was used, the refractive of the composite was 2.32 in the trans state and dropped to 1.85 in the cis state in the operating wavelength of 340 nm. At higher concentrations of 0.020 and 0.03 M, a wide refractive index tuning is achieved under the same wavelength. In 0.030 M, the refractive index was 2.65 for the trans state and 2.0 for the cis state. The results suggest that the increase in refractive index tuning is related to the concentration of the AAP unit of the composite film. Theoretically, the spectral properties of the composite film are also simulated with two methods: (1) the Maxwell equations and (2) the frequency dependent finite element, showing excellent agreement for the different propagation modes of the proposed waveguide for regulated signals of 365/525 nm wavelengths. Furthermore, the photoisomerization of the PDMS-AAP thin film is analyzed with UV–vis spectroscopy to demonstrate the isomerization responses of the AAP moiety in the solid state. In addition, preliminary photomechanical actuation properties of the composite film have been investigated. The PDMS-AAP waveguide described provides a new approach for optically tunable photonics applications in the UV–visible region.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135903216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract. A compact and broadband polarization beam splitter (PBS) is proposed based on an asymmetric directional coupler consisting of a hybrid plasmonic waveguide and a ridge waveguide on lithium-niobate-on-insulator. Due to the surface plasma polariton (SPP) effect, the phase-matching condition is satisfied for transverse electric polarization, whereas the transverse magnetic polarization has a significant phase mismatch by choosing reasonable widths of both waveguides. A short ( ∼ 28 μm long) PBS is designed while the gap width is chosen to be 200 nm to make it easy to fabricate. Numerical simulations show that the designed PBS has a broad bandwidth (>130 nm) for an extinction ratio of >15 dB and a large fabrication tolerance for the variation of the waveguide width (over ± 50 nm).
{"title":"Compact and broadband polarization beam splitter on lithium-niobate-on-insulator using a hybrid plasmonic waveguide","authors":"Jiakang Shi, D. Ge, Mengcheng Lv, Yujie Zhou, Guoxin Cui, Liqiang Zhang","doi":"10.1117/1.JNP.17.026005","DOIUrl":"https://doi.org/10.1117/1.JNP.17.026005","url":null,"abstract":"Abstract. A compact and broadband polarization beam splitter (PBS) is proposed based on an asymmetric directional coupler consisting of a hybrid plasmonic waveguide and a ridge waveguide on lithium-niobate-on-insulator. Due to the surface plasma polariton (SPP) effect, the phase-matching condition is satisfied for transverse electric polarization, whereas the transverse magnetic polarization has a significant phase mismatch by choosing reasonable widths of both waveguides. A short ( ∼ 28 μm long) PBS is designed while the gap width is chosen to be 200 nm to make it easy to fabricate. Numerical simulations show that the designed PBS has a broad bandwidth (>130 nm) for an extinction ratio of >15 dB and a large fabrication tolerance for the variation of the waveguide width (over ± 50 nm).","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"17 1","pages":"026005 - 026005"},"PeriodicalIF":1.5,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42226053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract. A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6 × 6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77 MV / cm, and the Auger coefficient decreased down to 2.1 × 10 − 31 and 0.6 × 10 − 31 cm6 s − 1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.
{"title":"Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode","authors":"R. Yahyazadeh, Z. Hashempour","doi":"10.1117/1.JNP.17.026011","DOIUrl":"https://doi.org/10.1117/1.JNP.17.026011","url":null,"abstract":"Abstract. A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6 × 6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77 MV / cm, and the Auger coefficient decreased down to 2.1 × 10 − 31 and 0.6 × 10 − 31 cm6 s − 1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"17 1","pages":"026011 - 026011"},"PeriodicalIF":1.5,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45379725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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