The band-gap of InxGa1−xN can cover a wide range of electromagnetic radiation of the solar spectrum and offers a method for using it in photovoltaic solar cells. A solar cell structure consisting of InxGa1−xN/GaN superlattice (SL) piled up between p-GaN and n-GaN is modeled and simulated. The impact of variations in the indium mole fraction and step graded SL having different quantum well thicknesses are analyzed. The results indicate that high indium content leads to lattice mismatch, decrement of fill factor, and development of strain in the quantum wells that reduce the overall efficiency. To increase the efficiency of the solar cell, a step graded 20 SL with a 5 nm quantum well thickness is introduced, and the highest efficiency of 22.6% is obtained. The use of a step graded SL InGaN cell allows for constructing real structures with the possibility of obtaining the enhanced power conversion efficiency compared with a conventional quantum well solar cell using SILVACO TCAD.
{"title":"High efficient step graded Inx Ga1−x N/GaN superlattice solar cell","authors":"Dickson Warepam, Khomdram Jolson Singh, Rudra Sankar Dhar","doi":"10.1117/1.jnp.18.026002","DOIUrl":"https://doi.org/10.1117/1.jnp.18.026002","url":null,"abstract":"The band-gap of InxGa1−xN can cover a wide range of electromagnetic radiation of the solar spectrum and offers a method for using it in photovoltaic solar cells. A solar cell structure consisting of InxGa1−xN/GaN superlattice (SL) piled up between p-GaN and n-GaN is modeled and simulated. The impact of variations in the indium mole fraction and step graded SL having different quantum well thicknesses are analyzed. The results indicate that high indium content leads to lattice mismatch, decrement of fill factor, and development of strain in the quantum wells that reduce the overall efficiency. To increase the efficiency of the solar cell, a step graded 20 SL with a 5 nm quantum well thickness is introduced, and the highest efficiency of 22.6% is obtained. The use of a step graded SL InGaN cell allows for constructing real structures with the possibility of obtaining the enhanced power conversion efficiency compared with a conventional quantum well solar cell using SILVACO TCAD.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"53 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140828281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sara Maleki, Azadeh Haghighatzadeh, Amin Attarzadeh
A single GaAs/GaAsSb/GaAs quantum well having a valence band profile was described in this study using the V-shaped potential. An external static electric field (E-field) and a high-frequency intense laser irradiation were utilized to examine the first-order linear and third-order nonlinear optical properties. The theoretical modeling was achieved using a compact-density matrix and iterative process in a two-level system framework. The position-dependent effective mass approximation was applied to solve the Schrödinger equation and evaluating the energy states and their corresponding wavefunctions for the two lowest bound states within the quantum well’s valence band with regards to a heavy hole. We extended the investigation of the single V-shaped potential by incorporating the effects of the E-field, the well’s half-width, and antimony (Sb) content on optical characteristics. The study on the combined effects of the intense laser field and the mentioned factors revealed that the peak positions and amplitudes of the linear and nonlinear optical characteristics were strongly influenced by variation in the laser strength. Specifically, we observed, that under higher laser dressing parameters, the application of the electric field played an important role. This occurred when the impact of the well’s half-width and Sb content became prominent at values of lower laser-dressing parameters. It is significant to note that our findings will have potential real-world applications in photonics, optoelectronics, and related areas.
本研究利用 V 型势能描述了具有价带轮廓的 GaAs/GaAsSb/GaAs 单量子阱。利用外部静态电场（E-field）和高频强激光照射来检验一阶线性和三阶非线性光学特性。理论建模采用了紧凑密度矩阵和两级系统框架下的迭代过程。应用位置相关有效质量近似法求解了薛定谔方程，并评估了量子阱价带内与重空穴有关的两个最低束缚态的能态及其相应的波函数。我们将电场、量子井的半宽度和锑（Sb）含量对光学特性的影响纳入其中，从而扩展了对单一 V 形势垒的研究。对强激光场和上述因素综合影响的研究表明，线性和非线性光学特性的峰值位置和振幅受激光强度变化的影响很大。具体来说，我们观察到，在较高的激光修整参数下，电场的应用发挥了重要作用。当激光修整参数值较低时，井的半宽和锑含量的影响就会变得突出。值得注意的是，我们的发现将在光子学、光电子学和相关领域产生潜在的实际应用。
{"title":"Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling","authors":"Sara Maleki, Azadeh Haghighatzadeh, Amin Attarzadeh","doi":"10.1117/1.jnp.18.026001","DOIUrl":"https://doi.org/10.1117/1.jnp.18.026001","url":null,"abstract":"A single GaAs/GaAsSb/GaAs quantum well having a valence band profile was described in this study using the V-shaped potential. An external static electric field (E-field) and a high-frequency intense laser irradiation were utilized to examine the first-order linear and third-order nonlinear optical properties. The theoretical modeling was achieved using a compact-density matrix and iterative process in a two-level system framework. The position-dependent effective mass approximation was applied to solve the Schrödinger equation and evaluating the energy states and their corresponding wavefunctions for the two lowest bound states within the quantum well’s valence band with regards to a heavy hole. We extended the investigation of the single V-shaped potential by incorporating the effects of the E-field, the well’s half-width, and antimony (Sb) content on optical characteristics. The study on the combined effects of the intense laser field and the mentioned factors revealed that the peak positions and amplitudes of the linear and nonlinear optical characteristics were strongly influenced by variation in the laser strength. Specifically, we observed, that under higher laser dressing parameters, the application of the electric field played an important role. This occurred when the impact of the well’s half-width and Sb content became prominent at values of lower laser-dressing parameters. It is significant to note that our findings will have potential real-world applications in photonics, optoelectronics, and related areas.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"44 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140571546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
YingTe Wang, SiRong Cheng, RongRong Wu, YuanYuan Zhang, BoHan Wang
Nitrogen and sulfur co-doped green fluorescent carbon dots (G-CDs) with quantum yield (QY) of 28.26% were synthesized by hydrothermal method with p-phenylenediamine and thiosemicarbazone as precursors. The synthesized G-CDs exhibit good sensitivity and anti-interference ability for detecting copper ion (Cu2+) by fluorescence quenching (λex=390 nm, λem=535 nm) with a linear range of 20 to 200 μM and the limit of detection of 4.8 μM. This analytical method has been applied to detect Cu2+ of the local lake with good accuracy and recovery.
{"title":"Preparation of high quantum yield nitrogen and sulfur co-doped carbon dots for sensitive detection of Cu2+","authors":"YingTe Wang, SiRong Cheng, RongRong Wu, YuanYuan Zhang, BoHan Wang","doi":"10.1117/1.jnp.18.016011","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016011","url":null,"abstract":"Nitrogen and sulfur co-doped green fluorescent carbon dots (G-CDs) with quantum yield (QY) of 28.26% were synthesized by hydrothermal method with p-phenylenediamine and thiosemicarbazone as precursors. The synthesized G-CDs exhibit good sensitivity and anti-interference ability for detecting copper ion (Cu2+) by fluorescence quenching (λex=390 nm, λem=535 nm) with a linear range of 20 to 200 μM and the limit of detection of 4.8 μM. This analytical method has been applied to detect Cu2+ of the local lake with good accuracy and recovery.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"158 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140105920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, HNbxTa1-xWO6 (x=0, 0.3, 0.5, 1) nanosheets were successfully synthesized by an in-suit doping strategy at the molecular level and an exfoliation-restacking process. The crystal phase structures, surface morphologies, and chemical components of the obtained HNbxTa1-xWO6 nanosheets were systematically characterized by X-ray diffraction patterns, laser Raman spectroscopy, scanning electron microscopy, ultraviolet–visible diffuse reflectance spectroscopy and N2 adsorption-desorption measurements. The adsorption and photocatalytic degradation of RhB aqueous solution under dark and simulated sunlight irradiation were investigated, respectively. The adsorption results demonstrated that the large total pore volume and strong acidity are favorable for the adsorption of RhB, and the photocatalytic results showed that the introduction of Ta element greatly improved the photocatalytic activities of the as-prepared HNbxTa1-xWO6 nanosheets. Among the HNbxTa1-xWO6 nanosheets, HTaWO6 nanosheet has the highest photocatalytic activity for RhB degradation with a rate constant of 1.62×10−2 min−1. According to the photocatalytic result, it can be concluded that the use of in-suit doping to control the energy band structure is an effective method for designing efficient photocatalysts.
{"title":"In-suit doping Ta element in HNbWO6 nanosheets for enhancing photocatalytic performance","authors":"Jichao Zhu, Hongbo Zhao, Lifang Hu, Jie He","doi":"10.1117/1.jnp.18.016009","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016009","url":null,"abstract":"In this work, HNbxTa1-xWO6 (x=0, 0.3, 0.5, 1) nanosheets were successfully synthesized by an in-suit doping strategy at the molecular level and an exfoliation-restacking process. The crystal phase structures, surface morphologies, and chemical components of the obtained HNbxTa1-xWO6 nanosheets were systematically characterized by X-ray diffraction patterns, laser Raman spectroscopy, scanning electron microscopy, ultraviolet–visible diffuse reflectance spectroscopy and N2 adsorption-desorption measurements. The adsorption and photocatalytic degradation of RhB aqueous solution under dark and simulated sunlight irradiation were investigated, respectively. The adsorption results demonstrated that the large total pore volume and strong acidity are favorable for the adsorption of RhB, and the photocatalytic results showed that the introduction of Ta element greatly improved the photocatalytic activities of the as-prepared HNbxTa1-xWO6 nanosheets. Among the HNbxTa1-xWO6 nanosheets, HTaWO6 nanosheet has the highest photocatalytic activity for RhB degradation with a rate constant of 1.62×10−2 min−1. According to the photocatalytic result, it can be concluded that the use of in-suit doping to control the energy band structure is an effective method for designing efficient photocatalysts.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"2012 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140035780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silicon micro-ring resonator-based generation of all-optical (2×2) Walsh–Hadamard code is proposed. The energy-efficient, ultra-high-speed, and compact nature of micro-ring resonator-based devices is essential for optical computing. Both MATLAB and the Ansys Lumerical finite difference time domain (FDTD) approach are used to implement the generation of all-optical (2×2) Walsh–Hadamard code. The proposed design is simulated at about 260 Gbps. In the recommended circuit, the needed pump power for switching is merely 0.84 mW, which is extremely little in contrast. The “figure of merits” of the proposed design is evaluated through numerical simulation. The obtained contrast ratio and extinction ratio are considerably greater at 25.24 and 14.63 dB, respectively. On the other hand, the achieved amplitude modulation of 0.13 dB is extremely low. The on-off ratio for a single micro-ring resonator is 36.9 dB.
{"title":"Generation of all-optical Walsh–Hadamard code using silicon micro-ring resonator","authors":"Manjur Hossain, Kalimuddin Mondal, Jayanta Kumar Rakshit, Surajit Mandal, Amit Kumar Goyal, Yehia Massoud","doi":"10.1117/1.jnp.18.016010","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016010","url":null,"abstract":"Silicon micro-ring resonator-based generation of all-optical (2×2) Walsh–Hadamard code is proposed. The energy-efficient, ultra-high-speed, and compact nature of micro-ring resonator-based devices is essential for optical computing. Both MATLAB and the Ansys Lumerical finite difference time domain (FDTD) approach are used to implement the generation of all-optical (2×2) Walsh–Hadamard code. The proposed design is simulated at about 260 Gbps. In the recommended circuit, the needed pump power for switching is merely 0.84 mW, which is extremely little in contrast. The “figure of merits” of the proposed design is evaluated through numerical simulation. The obtained contrast ratio and extinction ratio are considerably greater at 25.24 and 14.63 dB, respectively. On the other hand, the achieved amplitude modulation of 0.13 dB is extremely low. The on-off ratio for a single micro-ring resonator is 36.9 dB.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"11 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140035481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the continuous improvement of detection technology, higher requirements are put forward for infrared camouflage. Conventional low-emissivity materials have serious thermal instability, which increases the risk of detection. There is an urgent need to investigate more efficient infrared stealth materials. We design a metamaterial selective broadband emitter that utilizes multi-resonance coupling of metal patterns for infrared stealth. The proposed design exhibits low emissivity in the infrared atmosphere windows (3 to 5 μm and 8 to 14 μm) for infrared suppression and high emissivity in the non-infrared atmosphere window (5 to 8 μm) for radiative cooling. We introduce a supplementary design for high-temperature environments to meet a broader application need. Moreover, the low angle-dependence of the metamaterial emitter enables it to maintain broadband absorption characteristics even under large-angle incidence. This proposed approach serves as an effective supplement to the design of metamaterial broadband emitters and holds great potential for applications in infrared stealth, radiative cooling, thermal detection, sensors, thermophotovoltaics, and various other fields.
{"title":"Multi-resonance coupled metal pattern metamaterial for selective thermal emission","authors":"Wei Li, Shenglan Wu, Chunhui Tian, Jiacheng Li, Shuang Liu, Genlin Wu","doi":"10.1117/1.jnp.18.016012","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016012","url":null,"abstract":"With the continuous improvement of detection technology, higher requirements are put forward for infrared camouflage. Conventional low-emissivity materials have serious thermal instability, which increases the risk of detection. There is an urgent need to investigate more efficient infrared stealth materials. We design a metamaterial selective broadband emitter that utilizes multi-resonance coupling of metal patterns for infrared stealth. The proposed design exhibits low emissivity in the infrared atmosphere windows (3 to 5 μm and 8 to 14 μm) for infrared suppression and high emissivity in the non-infrared atmosphere window (5 to 8 μm) for radiative cooling. We introduce a supplementary design for high-temperature environments to meet a broader application need. Moreover, the low angle-dependence of the metamaterial emitter enables it to maintain broadband absorption characteristics even under large-angle incidence. This proposed approach serves as an effective supplement to the design of metamaterial broadband emitters and holds great potential for applications in infrared stealth, radiative cooling, thermal detection, sensors, thermophotovoltaics, and various other fields.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"66 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140314264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High-performance sensors can be efficiently realized with an all-dielectric metasurface using high-Q-factor Fano resonance. In this study, a numerical analysis of an all-dielectric metasurface with two square holes and one rectangular hole was conducted. Multiple Fano resonances with a high Q-factor and modulation depth were excited by a toroidal dipole, an electric quadrupole, and a magnetic dipole by breaking the symmetry of the structure. According to the computed results, the modulation depth approached 100%, and the maximum Q-factor reached 90,048. The sensing performance of the structure is also discussed. The structure had a maximum sensitivity and figure of merit of 275 nm/RIU and 1833 RIU−1, respectively. Owing to the unique structure, multiple Fano resonances can be achieved, with applications in multiwavelength communication, multichannel nanosensors, and optical modulators. These resonances have high Q-factors, high modulation depths, and small linewidths.
{"title":"High-Q-factor multiple Fano resonance for sensitive refractive index sensors based on all-dielectric metasurface","authors":"Zuxiong Liao, Yiping Huo, Tong Liu, Chen Zhao, Tao Zhang, Congmu Xu, Zhongyue Zhang","doi":"10.1117/1.jnp.18.016007","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016007","url":null,"abstract":"High-performance sensors can be efficiently realized with an all-dielectric metasurface using high-Q-factor Fano resonance. In this study, a numerical analysis of an all-dielectric metasurface with two square holes and one rectangular hole was conducted. Multiple Fano resonances with a high Q-factor and modulation depth were excited by a toroidal dipole, an electric quadrupole, and a magnetic dipole by breaking the symmetry of the structure. According to the computed results, the modulation depth approached 100%, and the maximum Q-factor reached 90,048. The sensing performance of the structure is also discussed. The structure had a maximum sensitivity and figure of merit of 275 nm/RIU and 1833 RIU−1, respectively. Owing to the unique structure, multiple Fano resonances can be achieved, with applications in multiwavelength communication, multichannel nanosensors, and optical modulators. These resonances have high Q-factors, high modulation depths, and small linewidths.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"20 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139752065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Light propagation and acoustic vibrations can be controlled by designing the bandgap of phoxonic crystals, which support photonic and phononic bandgaps simultaneously. In this study, we numerically investigated the optical and mechanical properties of a clover-shaped 6H-SIC crystal microcavity. The results indicate that the frequency range of the phononic bandgap can be manipulated by adjusting the geometry of the structure, resulting in a wide phononic bandgap over 12 GHz centered at 30.8 GHz. The structure also supports strong localized optical modes for visible light with a Q-factor over 143. Within the photonic and phononic bandgaps of the phoxonic crystal, the structure can reduce mechanical vibrations and support a confined optical mode that can be used for trapping nanoparticles.
{"title":"6H-SiC phoxonic microcavities with photonic and phononic bandgaps","authors":"Peiwen Gao, Jingzhi Wu, Yanhong Wang","doi":"10.1117/1.jnp.18.016006","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016006","url":null,"abstract":"Light propagation and acoustic vibrations can be controlled by designing the bandgap of phoxonic crystals, which support photonic and phononic bandgaps simultaneously. In this study, we numerically investigated the optical and mechanical properties of a clover-shaped 6H-SIC crystal microcavity. The results indicate that the frequency range of the phononic bandgap can be manipulated by adjusting the geometry of the structure, resulting in a wide phononic bandgap over 12 GHz centered at 30.8 GHz. The structure also supports strong localized optical modes for visible light with a Q-factor over 143. Within the photonic and phononic bandgaps of the phoxonic crystal, the structure can reduce mechanical vibrations and support a confined optical mode that can be used for trapping nanoparticles.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"155 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139752121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hikmat Mohammed Hasan AlAameri, Mehrdad Shokooh-Saremi
An increasing amount of attention is being paid to guided-mode resonance (GMR) sensors since they can effectively detect small refractive indices (RIs) changes due to their narrow spectral linewidth and high efficiency. In this work, a binary, all-dielectric, asymmetric GMR (A-GMR) sensor structure with enhanced sensitivity and narrowed resonant linewidth is proposed to substantially improve the figure of merit (FOM) with respect to symmetric counterparts. To achieve the best performance, particle swarm optimization is employed to optimize the structural parameters. Furthermore, the proposed GMR sensor is compared with dielectric symmetric GMR sensors. High bulk sensitivity of 3157.6 nm/RIU, full width at half maximum down to 0.076 nm, and FOM of 41547.368 (RIU)−1 have been achieved for the A-GMR sensor, showing high-performance RI sensing.
{"title":"Guided-mode resonance sensors with high sensitivity and asymmetric structures","authors":"Hikmat Mohammed Hasan AlAameri, Mehrdad Shokooh-Saremi","doi":"10.1117/1.jnp.18.016005","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016005","url":null,"abstract":"An increasing amount of attention is being paid to guided-mode resonance (GMR) sensors since they can effectively detect small refractive indices (RIs) changes due to their narrow spectral linewidth and high efficiency. In this work, a binary, all-dielectric, asymmetric GMR (A-GMR) sensor structure with enhanced sensitivity and narrowed resonant linewidth is proposed to substantially improve the figure of merit (FOM) with respect to symmetric counterparts. To achieve the best performance, particle swarm optimization is employed to optimize the structural parameters. Furthermore, the proposed GMR sensor is compared with dielectric symmetric GMR sensors. High bulk sensitivity of 3157.6 nm/RIU, full width at half maximum down to 0.076 nm, and FOM of 41547.368 (RIU)−1 have been achieved for the A-GMR sensor, showing high-performance RI sensing.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"19 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139752061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Since the emergence of perovskite as an exceptional light absorbing material, it has made significant advancements in enhancing the efficiency of solar cells. Building upon this foundation, the reconfiguration of internal optical properties within perovskite holds the promise of further improving efficiency. We investigated the influence of metallic aluminum triangular nanostructures on absorption rates. Our findings indicate that the incorporation of stacked aluminum triangular nanostructures into perovskite thin films, along with controlled adjustments in the side length, can significantly enhance absorption rates. In conclusion, comparative tests revealed a remarkable 51% increase in the solar spectrum absorption rate for single layer perovskite thin film photovoltaic cells with a thickness of 200 nm.
{"title":"Enhancement of absorption by incorporating aluminum triangular nanostructures into perovskite","authors":"Ziyu Chen, Xiangju Li, Cong Chen","doi":"10.1117/1.jnp.18.016004","DOIUrl":"https://doi.org/10.1117/1.jnp.18.016004","url":null,"abstract":"Since the emergence of perovskite as an exceptional light absorbing material, it has made significant advancements in enhancing the efficiency of solar cells. Building upon this foundation, the reconfiguration of internal optical properties within perovskite holds the promise of further improving efficiency. We investigated the influence of metallic aluminum triangular nanostructures on absorption rates. Our findings indicate that the incorporation of stacked aluminum triangular nanostructures into perovskite thin films, along with controlled adjustments in the side length, can significantly enhance absorption rates. In conclusion, comparative tests revealed a remarkable 51% increase in the solar spectrum absorption rate for single layer perovskite thin film photovoltaic cells with a thickness of 200 nm.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"256 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139752064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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