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2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)最新文献

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A 0.5-8.5 GHz fully-differential CMOS RF distributed amplifier 一种0.5-8.5 GHz全差分CMOS射频分布式放大器
Pub Date : 2000-02-27 DOI: 10.1109/SSMSD.2000.836456
Hee-Tae Ahn, D. Allstot
A fully-differential four-stage distributed amplifier (DA) with 5.5 dB gain and 8.5 GHz bandwidth has been integrated in 1.3 mm/spl times/2.2 mm in a 0.6 /spl mu/m digital CMOS process. The DA dissipates 216 mW from a single 3 V supply. A custom CAD tool was used to optimize the DA design including device and package parasitics.
一种增益5.5 dB、带宽8.5 GHz的全差分四级分布式放大器(DA)以1.3 mm/spl倍/2.2 mm的速度集成在0.6 /spl mu/m的数字CMOS工艺中。单路3v电源耗散216mw。利用自定义CAD工具对数据处理设计进行优化,包括器件寄生和封装寄生。
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引用次数: 2
CMOS DSP and microprocessor cores using optoelectronic VLSI CMOS DSP和微处理器内核采用光电VLSI
Pub Date : 2000-02-27 DOI: 10.1109/SSMSD.2000.836435
F.E. Kaimilev, J. Ekman, P. Chandramani, A. Krishnamoorthy, R. Rozier
The use of inter-chip optical interconnects can lead to a dramatic increase in chip-level and system-level performance of high-performance computing and signal processing systems. In this paper, we describe our efforts to build chipsets for these applications using optoelectronic VLSI. The performance advantages of using optical interconnects are compared with the conventional approach.
芯片间光互连的使用可以显著提高高性能计算和信号处理系统的芯片级和系统级性能。在本文中,我们描述了我们使用光电VLSI为这些应用构建芯片组的努力。比较了采用光互连方式与传统互连方式的性能优势。
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引用次数: 1
The design of 433 MHz class AB CMOS power amplifier 433mhz AB类CMOS功率放大器的设计
Pub Date : 2000-02-27 DOI: 10.1109/SSMSD.2000.836442
Seoung-Jae Yoo, H. Ahn, M. Hella, M. Ismail
This paper reports the design and simulation results of a 433 MHz Power Amplifier (PA) which is designed in a 0.5 /spl mu/m CMOS technology and can provide variable gain modes. The PA consists of a driver and an output stage, and the gain is adjustable using digital codes. In this paper, 16.5 dB and 3.5 dB gain modes are chosen. This amplifier matches a 50 ohm load and provides 20 mW of output power at 432-434 MHz from a 3 V supply. The overall power efficiency is 30%.
本文报道了采用0.5 /spl μ l /m CMOS工艺设计的可提供可变增益模式的433 MHz功率放大器的设计和仿真结果。放大器由驱动器和输出级组成,增益可通过数字编码调节。本文选择了16.5 dB和3.5 dB增益模式。该放大器匹配50欧姆负载,从3v电源在432-434 MHz提供20 mW输出功率。整体功率效率为30%。
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引用次数: 9
Biasing analog circuits using the nullor concept 偏置模拟电路使用零电平的概念
Pub Date : 2000-02-27 DOI: 10.1109/SSMSD.2000.836440
Esteban Tlelo-Cuautle, L. A. Sarmiento-Reyes
In an attempt to provide an efficient biasing scheme for analog circuits, this paper addresses the problem of designing the correct bias-circuitry using the nullor concept. First, the rules for biasing nullators and norators are introduced. Second, a technique for efficiently biasing analog circuits is proposed. Finally, the proposed biasing technique is demonstrated by implementing it in practical circuits.
为了给模拟电路提供一种有效的偏置方案,本文讨论了利用零电平概念设计正确偏置电路的问题。首先,介绍了偏置nullator和norators的规则。其次,提出了一种有效偏置模拟电路的技术。最后,通过在实际电路中的实现验证了所提出的偏置技术。
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引用次数: 15
A dual edge transition based BIST approach for passive analog circuits 无源模拟电路中基于双边缘转换的BIST方法
Pub Date : 2000-02-27 DOI: 10.1109/SSMSD.2000.836469
A. Walker, P. Lala
A new mixed-signal Built-in Self-Test (BIST) approach that is based upon voltage transitions at the primary output of the analog block under test (CUT) is presented in this paper. This CUT output is the pulse response of the CUT for a rail-to-rail pulse stream. The technique can effectively detect both soft and hard faults and does not require an analog-to-digital converter (ADC) or/and digital-to-analog converter (DAC). This approach also does not require any additional analog circuits to realize the test signal generator and sample circuits. The paper is concluded with an example of the application of the proposed approach for a passive second order notch filter.
本文提出了一种新的混合信号内置自检(BIST)方法,该方法基于被测模拟块(CUT)初级输出端的电压转换。这个CUT输出是CUT对轨到轨脉冲流的脉冲响应。该技术可以有效地检测软故障和硬故障,并且不需要模数转换器(ADC)或数模转换器(DAC)。这种方法也不需要任何额外的模拟电路来实现测试信号发生器和采样电路。最后给出了该方法在无源二阶陷波滤波器中的应用实例。
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引用次数: 5
Learning of a backpropagation neural network to tune a fuzzy control of a thermal system 学习反向传播神经网络调节热系统的模糊控制
Pub Date : 2000-02-27 DOI: 10.1109/SSMSD.2000.836470
R. Urbieta Parrazales, M. Ramírez, S. Osvaldo Espinosa, J. Elena Aguilar, A. De Luca
This regular paper describes three important aspects: design, simulation and implementation of neuro-fuzzy control applied to the temperature variable of a thermal system with a range of 25/spl deg/C to 75/spl deg/C and resolution of 0.01%. In the design were found the membership functions and the fuzzy rules base already optimized of the fuzzy controller by means of a backpropagation neural network trained to 120 learning cycles. The simulation presents basic tables of the fuzzy controller obtained by the neural network. The implementation of the program of the fuzzy controller was effected using a 486 PC with conversion card A/D and of 8-bit port output.
本文介绍了三个重要方面:应用于热系统温度变量的神经模糊控制的设计、仿真和实现,温度范围为25/spl℃至75/spl℃,分辨率为0.01%。在设计中,通过训练到120个学习周期的反向传播神经网络,找到了模糊控制器的隶属函数和模糊规则库。仿真给出了由神经网络得到的模糊控制器的基本表。采用带a /D转换卡和8位端口输出的486 PC机实现模糊控制器程序。
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引用次数: 0
An active substrate driver for mixed-voltage SOI systems on a chip 芯片上混合电压SOI系统的有源衬底驱动器
Pub Date : 2000-02-27 DOI: 10.1109/SSMSD.2000.836451
S. Jackson, B. Blalock, M. Mojarradi, H.W. Li
High-voltage transistors in SOI that coexist with traditional low-voltage transistors enable the development of mixed-voltage (high-voltage and low-voltage) systems-on-a-chip. The parasitic back-channel transistor, however, is a critical issue in these mixed-voltage single-chip systems. The presence of high-voltage can create a situation in which the parasitic back-channel device turns on and "shorts-out" the top device inducing functional failure of the system. An active substrate driver has been designed that automatically adjusts the substrate bias voltage to a level ensuring the back-channel devices remain off. The active substrate driver should also help compensate for shifts in back-channel transistor threshold voltages induced by temperature, aging, and irradiation effects.
SOI中的高压晶体管与传统的低压晶体管共存,使得混合电压(高压和低压)片上系统的发展成为可能。然而,寄生后通道晶体管在这些混合电压单芯片系统中是一个关键问题。高压的存在会造成一种情况,在这种情况下,寄生的后通道器件打开并“短路”顶层器件,从而导致系统的功能故障。设计了一种有源衬底驱动器,可自动调整衬底偏置电压到一定水平,确保反向通道器件保持关闭状态。有源衬底驱动器还应有助于补偿由温度、老化和辐照效应引起的后通道晶体管阈值电压的变化。
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引用次数: 0
Body-driving as a low-voltage analog design technique for CMOS technology 车身驱动作为一种基于CMOS技术的低压模拟设计技术
Pub Date : 2000-02-27 DOI: 10.1109/SSMSD.2000.836457
B. Blalock, H.W. Li, P. Allen, S. Jackson
This paper presents an overview of circuit topologies for achieving low-voltage analog designs using body-driving techniques. A new and novel low-voltage Class AB output stage is presented along with topologies for amplifiers and a four quadrant multiplier. A discussion of the application of body-driving in a silicon-on-insulator (SOI) technology is also included.
本文介绍了利用体驱动技术实现低压模拟设计的电路拓扑概述。提出了一种新型的低压AB类输出级,以及放大器和四象限乘法器的拓扑结构。讨论了体驱动在绝缘体上硅(SOI)技术中的应用。
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引用次数: 136
High-level modeling of a high-speed flash A/D converter for mixed-signal simulations of digital telecommunication front-ends 用于数字通信前端混合信号仿真的高速闪存a /D转换器的高级建模
Pub Date : 2000-02-27 DOI: 10.1109/SSMSD.2000.836461
J. Compiet, P. D. Jong, P. Wambacq, G. Vandersteen, S. Donnay, D. M. Engels, I. Bolsens
A hierarchical high-level model of a high-speed flash ADC is presented. The input parameter list is extracted from a 400 MHz, 4-bit, flash ADC designed in HSPICE in a 0.35 /spl mu/m CMOS technology. A speedup in simulation time of 5000 is reported compared to the 3-bit flash ADC HSPICE simulations. The accuracy of the model is verified with HSPICE simulations and shows a good agreement.
提出了一种高速闪存模数转换器的分层高级模型。输入参数列表是从HSPICE设计的400 MHz, 4位闪存ADC中提取的,采用0.35 /spl mu/m CMOS技术。与3位闪存ADC HSPICE模拟相比,模拟时间加快了5000倍。通过HSPICE仿真验证了该模型的准确性,结果表明该模型具有较好的一致性。
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引用次数: 7
Free-space optics for 3D multi-chip environment 用于3D多芯片环境的自由空间光学
Pub Date : 2000-02-27 DOI: 10.1109/SSMSD.2000.836434
P. Marchand, S. Esener
The 3D-OESP consortium is a government-industry-university collaboration dedicated to the development of the technologies required to integrate stacked silicon chips with optoelectronic devices for high-performance computing and switching applications. By utilizing the combined strengths of 3D chip packaging and optoelectronic array interconnect technologies, it is possible to bring a low-power ultra-compact hardware solution to systems requiring fast processing and handling of large data arrays. We believe that, providing optoelectronic I/O to 3D chip stacks using VCSEL arrays with associated drivers, specially designed optical receivers, and micro-optics to direct the optical signals provide the most efficient way to communicate between the stacks. By integrating these components with a set of packaging techniques ranging from silicon micro-bench to plastic molded lenses, we are presently engaged in demonstrating the practical superiority of this approach in terms of system speed, power and volume metrics. We address various aspects of this approach that are being explored within the 3D-OESP consortium.
3D-OESP联盟是一个政府-产学研合作组织,致力于开发将堆叠硅芯片与光电子器件集成到高性能计算和开关应用所需的技术。通过利用3D芯片封装和光电子阵列互连技术的综合优势,可以为需要快速处理和处理大型数据阵列的系统带来低功耗超紧凑硬件解决方案。我们相信,使用带有相关驱动器的VCSEL阵列为3D芯片堆栈提供光电I/O,特别设计的光接收器和微光学来指导光信号,为堆栈之间的通信提供了最有效的方式。通过将这些组件与一系列封装技术(从硅微台到塑料模制透镜)集成在一起,我们目前正在展示这种方法在系统速度、功率和体积指标方面的实际优势。我们解决了3D-OESP联盟正在探索的这种方法的各个方面。
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引用次数: 1
期刊
2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)
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