Pub Date : 2024-09-09DOI: 10.1088/1361-6463/ad759d
Xuan Yang, Bin Xie, Xiaobing Luo
Quantum dots (QDs) are promising semiconducting luminous nanocrystals with superior optoelectronic characteristics. Unfortunately, these nanocrystals are fragile when exposed to humid environment. Oxygen and moisture molecules could erode QDs’ structure and degrade their luminous ability, which severely hinders the wide application of QDs in optoelectronic devices. Therefore, it is significantly important to resist oxygen/moisture permeation in the packaging of these QDs converted devices. In this review, we briefly introduce the oxygen/moisture-induced degradation mechanism of QDs and then the permeation theories. Subsequently, we review some strategies for resisting oxygen/moisture permeation from a packaging perspective, and analyze them with the permeation theories. Finally, we outline some future directions for developing efficient oxygen/moisture resistance solutions of QDs converted optoelectronic devices.
{"title":"Resisting oxygen/moisture permeation in quantum dots converted optoelectronic devices","authors":"Xuan Yang, Bin Xie, Xiaobing Luo","doi":"10.1088/1361-6463/ad759d","DOIUrl":"https://doi.org/10.1088/1361-6463/ad759d","url":null,"abstract":"Quantum dots (QDs) are promising semiconducting luminous nanocrystals with superior optoelectronic characteristics. Unfortunately, these nanocrystals are fragile when exposed to humid environment. Oxygen and moisture molecules could erode QDs’ structure and degrade their luminous ability, which severely hinders the wide application of QDs in optoelectronic devices. Therefore, it is significantly important to resist oxygen/moisture permeation in the packaging of these QDs converted devices. In this review, we briefly introduce the oxygen/moisture-induced degradation mechanism of QDs and then the permeation theories. Subsequently, we review some strategies for resisting oxygen/moisture permeation from a packaging perspective, and analyze them with the permeation theories. Finally, we outline some future directions for developing efficient oxygen/moisture resistance solutions of QDs converted optoelectronic devices.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"7 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.1088/1361-6463/ad6ba0
Yan Zhou, Zizheng Cao and Shaohua Yu
As one of the most important optical properties of a material, refractive index (RI) and its spatial distribution play important roles in managing the performances of photonic structures and devices. The capability to accurately and reliably characterize RI can be crucial for precise control of specifications of photonic devices, and is required in diverse scenarios, ranging from material inspections, processing controls and device stage characterizations. In this review, we discuss a variety of optical characterization techniques for RI profiling and measurements, leveraging optical interference contrast effects, phase-shifting effects, as well as spectroscopic responses in reflectometric and ellipsometric manners. In addition, we give a quick account of recent progress on these techniques empowered by advanced data treatments.
作为材料最重要的光学特性之一，折射率（RI）及其空间分布在管理光子结构和器件的性能方面发挥着重要作用。准确可靠地表征 RI 的能力对于精确控制光子器件的规格至关重要，在材料检测、加工控制和器件阶段表征等各种情况下都需要这种能力。在本综述中，我们讨论了用于 RI 剖析和测量的各种光学表征技术，这些技术利用了光学干涉对比效应、相移效应以及反射和椭偏方式的光谱响应。此外，我们还简要介绍了这些技术在先进数据处理技术的支持下所取得的最新进展。
{"title":"A review on optical characterization of refractive index in photonic related devices and applications","authors":"Yan Zhou, Zizheng Cao and Shaohua Yu","doi":"10.1088/1361-6463/ad6ba0","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6ba0","url":null,"abstract":"As one of the most important optical properties of a material, refractive index (RI) and its spatial distribution play important roles in managing the performances of photonic structures and devices. The capability to accurately and reliably characterize RI can be crucial for precise control of specifications of photonic devices, and is required in diverse scenarios, ranging from material inspections, processing controls and device stage characterizations. In this review, we discuss a variety of optical characterization techniques for RI profiling and measurements, leveraging optical interference contrast effects, phase-shifting effects, as well as spectroscopic responses in reflectometric and ellipsometric manners. In addition, we give a quick account of recent progress on these techniques empowered by advanced data treatments.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"29 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.1088/1361-6463/ad7470
Yifan Liao, Xinglin Wang, Huajun Gu, Huihui Zhang, Jiayi Meng and Wei-Lin Dai
The energy crisis has already seriously affected the daily lives of people around the world. As a result, designing efficient catalysts for photocatalytic hydrogen evolution (PHE) is a promising strategy for energy supply. Co-catalyst modification can significantly enhance the photocatalytic activity of single semiconductors, overcoming limitations posed by their narrow visible light absorption range and high electron–hole recombination rate. MXene-based composites demonstrate immense potential as co-catalysts for photocatalytic hydrogen production owing to their distinctive two-dimensional layered structure and outstanding photoelectrochemical properties, and further research and development efforts surrounding MXene-based composites will contribute significantly to the progress of sustainable energy technologies. In this review, we offer a comprehensive overview of synthesis methods for MXene and MXene-based composites, highlight illustrative instances of binary and ternary MXene-based composites in PHE, and explore potential avenues for future research and expansion of MXene-based composites.
{"title":"Synthesis and recent developments of MXene-based composites for photocatalytic hydrogen production","authors":"Yifan Liao, Xinglin Wang, Huajun Gu, Huihui Zhang, Jiayi Meng and Wei-Lin Dai","doi":"10.1088/1361-6463/ad7470","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7470","url":null,"abstract":"The energy crisis has already seriously affected the daily lives of people around the world. As a result, designing efficient catalysts for photocatalytic hydrogen evolution (PHE) is a promising strategy for energy supply. Co-catalyst modification can significantly enhance the photocatalytic activity of single semiconductors, overcoming limitations posed by their narrow visible light absorption range and high electron–hole recombination rate. MXene-based composites demonstrate immense potential as co-catalysts for photocatalytic hydrogen production owing to their distinctive two-dimensional layered structure and outstanding photoelectrochemical properties, and further research and development efforts surrounding MXene-based composites will contribute significantly to the progress of sustainable energy technologies. In this review, we offer a comprehensive overview of synthesis methods for MXene and MXene-based composites, highlight illustrative instances of binary and ternary MXene-based composites in PHE, and explore potential avenues for future research and expansion of MXene-based composites.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"70 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.1088/1361-6463/ad759e
Tongtong Wang, Si-Cong Zhu, Fangqi Liu
Novel spin field effect transistors (FETs) with metal contacts are designed to reduce the high Schottky barrier height (SBH) due to Fermi pinning, reducing energy consumption and increasing their performance. Herein, we effectively enhance the conductivity (106 orders of magnitude) and current threshold of the FETs by introducing interlayer graphene in the contact interface between the semiconductor blue phosphorus and the metal, thereby reducing the interlayer resistance. Electronic structure analysis shows that Blue Phosphorus–Graphene–Cu modulates the lowest SBH, yielding a larger FETs conductance compared to other metal systems. The spin injection further enhances the efficiency of FETs as rectifiers (enhanced 13%). This theoretical work provides rational guidance for realizing innovations in next-generation high-performance transistor technology, demonstrating the inherent potential of the regulatory mechanism.
{"title":"Strategy to enhance the performance of spin field effect transistors-insert effective intermediate layer graphene","authors":"Tongtong Wang, Si-Cong Zhu, Fangqi Liu","doi":"10.1088/1361-6463/ad759e","DOIUrl":"https://doi.org/10.1088/1361-6463/ad759e","url":null,"abstract":"Novel spin field effect transistors (FETs) with metal contacts are designed to reduce the high Schottky barrier height (SBH) due to Fermi pinning, reducing energy consumption and increasing their performance. Herein, we effectively enhance the conductivity (10<sup>6</sup> orders of magnitude) and current threshold of the FETs by introducing interlayer graphene in the contact interface between the semiconductor blue phosphorus and the metal, thereby reducing the interlayer resistance. Electronic structure analysis shows that Blue Phosphorus–Graphene–Cu modulates the lowest SBH, yielding a larger FETs conductance compared to other metal systems. The spin injection further enhances the efficiency of FETs as rectifiers (enhanced 13%). This theoretical work provides rational guidance for realizing innovations in next-generation high-performance transistor technology, demonstrating the inherent potential of the regulatory mechanism.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"60 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-06DOI: 10.1088/1361-6463/ad70c3
Shahla Hosseinzadeh Helaleh, Mohammad Alipourzadeh, Yaser Hajati
We theoretically investigate spin- and valley-polarized transport within a normal/antiferromagnetic/normal (N/AF/N) junction based on transition metal dichalcogenides (TMDs), under the influence of off-resonance circularly polarized light and gate voltage. Antiferromagnetism modulates spin states and the effective gap, reducing the spin gap for one state while increasing it for the opposite, resulting in a broad spin polarization and a controlled gap. Off-resonance circularly polarized light adjusts the valley degree of freedom and the effective gap, providing a wide range of valley polarization. Harnessing the strong spin–orbit coupling in TMDs enables perfect spin-valley polarization in the proposed junction across a wide range of Fermi energies through AF and/or off-resonance light manipulation. AF manipulation effectively narrows the band gap of TMDs at lower light energies, enhancing potential applications of the proposed junction for spin-valley filtering.
我们从理论上研究了在非共振圆偏振光和栅极电压的影响下，基于过渡金属二钙化物（TMDs）的正常/反铁磁/正常（N/AF/N）结内的自旋和谷极化传输。反铁磁性可以调节自旋态和有效间隙，减少一种态的自旋间隙，同时增加另一种态的自旋间隙，从而产生广泛的自旋极化和可控间隙。非共振圆偏振光可调节谷自由度和有效间隙，从而提供广泛的谷偏振。利用 TMD 中的强自旋轨道耦合，通过 AF 和/或非共振光操纵，可在广泛的费米能范围内实现拟议结中的完美自旋-山谷极化。在较低的光能下，AF 操纵可有效缩小 TMD 的带隙，从而增强了拟议结在自旋谷过滤方面的潜在应用。
{"title":"Photo- and exchange-field controlled spin and valley polarized transport in a normal/antiferromagnetic/normal (N/AF/N) junction based on transition metal dichalcogenides","authors":"Shahla Hosseinzadeh Helaleh, Mohammad Alipourzadeh, Yaser Hajati","doi":"10.1088/1361-6463/ad70c3","DOIUrl":"https://doi.org/10.1088/1361-6463/ad70c3","url":null,"abstract":"We theoretically investigate spin- and valley-polarized transport within a normal/antiferromagnetic/normal (N/AF/N) junction based on transition metal dichalcogenides (TMDs), under the influence of off-resonance circularly polarized light and gate voltage. Antiferromagnetism modulates spin states and the effective gap, reducing the spin gap for one state while increasing it for the opposite, resulting in a broad spin polarization and a controlled gap. Off-resonance circularly polarized light adjusts the valley degree of freedom and the effective gap, providing a wide range of valley polarization. Harnessing the strong spin–orbit coupling in TMDs enables perfect spin-valley polarization in the proposed junction across a wide range of Fermi energies through AF and/or off-resonance light manipulation. AF manipulation effectively narrows the band gap of TMDs at lower light energies, enhancing potential applications of the proposed junction for spin-valley filtering.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"123 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-06DOI: 10.1088/1361-6463/ad7150
Zesheng Liu, Yan Liu, Xiang Chen, Ying Xie, Yuanhang Qu, Xiyu Gu, Xin Tong, Haiyang Li, Wenjuan Liu, Yao Cai, Shishang Guo, Chengliang Sun
Narrow-band filters are widely applied in the narrow-band Internet of Things (NB-IoT). To meet the diverse bandwidth requirements of NB-IoT applications, this work presents the first antisymmetric (A1) mode Lamb wave resonators (LWRs) based on aluminum nitride (AlN) and AlN/ScAlN composite films. The impact of structural parameters, including pitch (P) and duty factor (DF), on main mode excitation and suppression of spurious modes is investigated. The optimal P and DF are found to be 10 μm and 0.05, respectively. Based on spurious-free A1 LWRs, an AlN/Sc0.096Al0.904N composite film is utilized to adjust the effective electromechanical coupling coefficient keff2. The experiment results demonstrate a tunable keff2 from 0.40% (5 MHz) to 0.25% (3 MHz), realizing a 37.5% adjustment range of keff2, which establishes a foundation for narrow-band tunable filters.
{"title":"AlN/ScAlN composite films-based spurious free A1 mode lamb wave resonator with adjustable effective electromechanical coupling coefficient","authors":"Zesheng Liu, Yan Liu, Xiang Chen, Ying Xie, Yuanhang Qu, Xiyu Gu, Xin Tong, Haiyang Li, Wenjuan Liu, Yao Cai, Shishang Guo, Chengliang Sun","doi":"10.1088/1361-6463/ad7150","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7150","url":null,"abstract":"Narrow-band filters are widely applied in the narrow-band Internet of Things (NB-IoT). To meet the diverse bandwidth requirements of NB-IoT applications, this work presents the first antisymmetric (A1) mode Lamb wave resonators (LWRs) based on aluminum nitride (AlN) and AlN/ScAlN composite films. The impact of structural parameters, including pitch (<italic toggle=\"yes\">P</italic>) and duty factor (DF), on main mode excitation and suppression of spurious modes is investigated. The optimal <italic toggle=\"yes\">P</italic> and DF are found to be 10 <italic toggle=\"yes\">μ</italic>m and 0.05, respectively. Based on spurious-free A1 LWRs, an AlN/Sc<sub>0.096</sub>Al<sub>0.904</sub>N composite film is utilized to adjust the effective electromechanical coupling coefficient <inline-formula>\u0000<tex-math><?CDATA $k_{{text{eff}}}^{text{2}}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msubsup><mml:mi>k</mml:mi><mml:mrow><mml:mrow><mml:mtext>eff</mml:mtext></mml:mrow></mml:mrow><mml:mrow><mml:mtext>2</mml:mtext></mml:mrow></mml:msubsup></mml:mrow></mml:math><inline-graphic xlink:href=\"dad7150ieqn1.gif\"></inline-graphic></inline-formula>. The experiment results demonstrate a tunable <inline-formula>\u0000<tex-math><?CDATA $k_{{text{eff}}}^{text{2}}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msubsup><mml:mi>k</mml:mi><mml:mrow><mml:mrow><mml:mtext>eff</mml:mtext></mml:mrow></mml:mrow><mml:mrow><mml:mtext>2</mml:mtext></mml:mrow></mml:msubsup></mml:mrow></mml:math><inline-graphic xlink:href=\"dad7150ieqn2.gif\"></inline-graphic></inline-formula> from 0.40% (5 MHz) to 0.25% (3 MHz), realizing a 37.5% adjustment range of <inline-formula>\u0000<tex-math><?CDATA $k_{{text{eff}}}^{text{2}}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msubsup><mml:mi>k</mml:mi><mml:mrow><mml:mrow><mml:mtext>eff</mml:mtext></mml:mrow></mml:mrow><mml:mrow><mml:mtext>2</mml:mtext></mml:mrow></mml:msubsup></mml:mrow></mml:math><inline-graphic xlink:href=\"dad7150ieqn3.gif\"></inline-graphic></inline-formula>, which establishes a foundation for narrow-band tunable filters.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"45 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-06DOI: 10.1088/1361-6463/ad7301
O Krettek, P Pottkämper, P Cignoni, K Tschulik, A von Keudell
Nanosecond plasmas ignited inside water at tungsten and platinum/iridium electrode tips are used to create very small nanoparticles with radii around 1 nm. Due to the very high power density of 1016 W m–2 at an electrode hot spot with a diameter of 10 µm, the surface is ablated during the short plasma pulse, and the metal vapour expands in the cavitation bubble after the plasma. This creates a very large cooling rate and the formation of nanoparticles by condensation from the created metal vapour. Finally, the nanoparticles disperse in the liquid. This sequence is quantified by measuring the net tip erosion by shadowgraphy and the created nanoparticles by transmission electron microscopy and x-ray photoelectron spectroscopy. The condensation process is modelled in conjunction with cavitation theory for the expanding cavitation bubble, which shows very good agreement with experimental data.
在钨和铂/铱电极尖端的水中点燃的纳秒等离子体用于制造半径约为 1 纳米的超小型纳米粒子。由于在直径为 10 µm 的电极热点上具有 1016 W m-2 的极高功率密度，表面在短等离子体脉冲期间被烧蚀，金属蒸气在等离子体后的空化泡中膨胀。这就产生了非常大的冷却率，并通过所产生的金属蒸汽冷凝形成纳米颗粒。最后，纳米颗粒分散在液体中。通过阴影测量法测量尖端的净侵蚀，通过透射电子显微镜和 X 射线光电子能谱测量生成的纳米粒子，对这一过程进行量化。结合空化理论对不断扩大的空化泡的凝结过程进行了模拟，结果与实验数据非常吻合。
{"title":"Creation of tungsten and platinum nanoparticles from nanosecond plasmas in water","authors":"O Krettek, P Pottkämper, P Cignoni, K Tschulik, A von Keudell","doi":"10.1088/1361-6463/ad7301","DOIUrl":"https://doi.org/10.1088/1361-6463/ad7301","url":null,"abstract":"Nanosecond plasmas ignited inside water at tungsten and platinum/iridium electrode tips are used to create very small nanoparticles with radii around 1 nm. Due to the very high power density of 10<sup>16</sup> W m<sup>–2</sup> at an electrode hot spot with a diameter of 10 <italic toggle=\"yes\">µ</italic>m, the surface is ablated during the short plasma pulse, and the metal vapour expands in the cavitation bubble after the plasma. This creates a very large cooling rate and the formation of nanoparticles by condensation from the created metal vapour. Finally, the nanoparticles disperse in the liquid. This sequence is quantified by measuring the net tip erosion by shadowgraphy and the created nanoparticles by transmission electron microscopy and x-ray photoelectron spectroscopy. The condensation process is modelled in conjunction with cavitation theory for the expanding cavitation bubble, which shows very good agreement with experimental data.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"10 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-06DOI: 10.1088/1361-6463/ad714f
Ziyi Wan, Dongjian Jiang, Yuzhan Zheng, Ye Fu, Xiao Sun, Bo Wang, Cuixia Cui, Changping Yao, Wenjun Luo, Zhigang Zou
Two-electrode solar rechargeable devices can converse and store solar energy without external bias. However, the photo-charging and dark-discharging current of these devices is low and limits their practical applications. Here, the photo-charging and dark-discharging current of Si/poly(N-methylpyrrole) (PNMPy) photoanode increases 21 and 10 times by preparing nanostructured Si semiconductor, up to 5.09 and 2.06 mA cm−2, respectively. Further studies suggest that the improved current comes from higher separation efficiency of photo-generated carriers and new electron transfer paths on the surface of nanostructured Si. Moreover, a solar rechargeable device of Si/PNMPy/H2SO4(aq)/WO3/FTO was prepared, which indicated good cyclic stability. These results deepen our understanding on the current in solar rechargeable devices and offer guidance for the design of other high-performance devices.
双电极太阳能充电装置可以在没有外部偏压的情况下转换和储存太阳能。然而，这些器件的光充电和暗放电电流较低，限制了它们的实际应用。在这里，通过制备纳米结构硅半导体，硅/聚（N-甲基吡咯）（PNMPy）光阳极的光充电和暗放电电流分别提高了 21 倍和 10 倍，达到 5.09 mA cm-2 和 2.06 mA cm-2。进一步的研究表明，电流的提高来自于纳米结构硅表面光生载流子更高的分离效率和新的电子传输路径。此外，还制备了 Si/PNMPy/H2SO4(aq)/WO3/FTO 太阳能充电装置，该装置具有良好的循环稳定性。这些结果加深了我们对太阳能充电设备中电流的理解，并为设计其他高性能设备提供了指导。
{"title":"Remarkably improved photo-charging and dark-discharging current in a faradaic junction solar rechargeable device by regulating the morphology of a semiconductor","authors":"Ziyi Wan, Dongjian Jiang, Yuzhan Zheng, Ye Fu, Xiao Sun, Bo Wang, Cuixia Cui, Changping Yao, Wenjun Luo, Zhigang Zou","doi":"10.1088/1361-6463/ad714f","DOIUrl":"https://doi.org/10.1088/1361-6463/ad714f","url":null,"abstract":"Two-electrode solar rechargeable devices can converse and store solar energy without external bias. However, the photo-charging and dark-discharging current of these devices is low and limits their practical applications. Here, the photo-charging and dark-discharging current of Si/poly(N-methylpyrrole) (PNMPy) photoanode increases 21 and 10 times by preparing nanostructured Si semiconductor, up to 5.09 and 2.06 mA cm<sup>−2</sup>, respectively. Further studies suggest that the improved current comes from higher separation efficiency of photo-generated carriers and new electron transfer paths on the surface of nanostructured Si. Moreover, a solar rechargeable device of Si/PNMPy/H<sub>2</sub>SO<sub>4</sub>(aq)/WO<sub>3</sub>/FTO was prepared, which indicated good cyclic stability. These results deepen our understanding on the current in solar rechargeable devices and offer guidance for the design of other high-performance devices.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"40 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Active nanophotonic metasurfaces have attracted considerable attention for their promise to develop compact, tunable optical metadevices with advanced functions. In this work, we theoretically demonstrated the dynamically controllable dual resonances of Fano and electromagnetically induced transparency (EIT) using a graphene-loaded all-dielectric metasurface with U-shaped gallium arsenide (GaAs) nanobars operating in the near-infrared region. The destructive interference between a subradiant mode (i.e. a dark mode) supported by two vertical GaAs bars and two radiative modes (i.e. two bright modes) supported by a horizontal GaAs nanobar gives rise to a Fano resonance and an EIT window with high transmission and a large quality factor (Q-factor) in the transmission spectrum. Importantly, the transmission amplitudes can be flexibly modulated by adjusting the graphene Fermi levels without rebuilding the nanostructures. This modulation results from the controllable light absorption by the loaded graphene monolayer due to its interband losses in the near-infrared spectrum. Furthermore, the peak wavelengths of the Fano resonance and EIT window with high Q-factors are highly sensitive to variations in the refractive index (RI) of the surrounding medium, giving the proposed metasurface a relatively good sensitivity of ∼700 nm RIU−1 and a high figure of merit of 280, making it an effective RI sensor. Additionally, the metasurface features an adjustable slow light effect, indicated by the adjusted group delay time ranging from 0.12 ps to 0.38 ps. Therefore, the metasurface system proposed in this work offers a viable platform for advanced multi-band optical sensing, low-loss slow light devices, switches, and potential applications in nonlinear optical fields.
有源纳米光子元表面因其有望开发出具有先进功能的紧凑型可调光学元器件而备受关注。在这项工作中，我们从理论上证明了利用石墨烯负载的全介质元表面与工作在近红外区域的 U 型砷化镓（GaAs）纳米棒，可动态控制法诺和电磁诱导透明（EIT）双共振。由两根垂直砷化镓纳米棒支持的亚辐射模式（即暗模式）和由一根水平砷化镓纳米棒支持的两个辐射模式（即两个亮模式）之间的破坏性干涉产生了法诺共振和具有高透射率的 EIT 窗口，并且在透射光谱中具有较大的品质因数（Q 因子）。重要的是，可以通过调整石墨烯费米级来灵活调制透射幅度，而无需重建纳米结构。这种调制源于负载石墨烯单层在近红外光谱中的带间损耗所产生的可控光吸收。此外，具有高 Q 因子的法诺共振和 EIT 窗口的峰值波长对周围介质的折射率（RI）变化高度敏感，这使得所提出的元表面具有相对较好的灵敏度（RIU-1 ∼ 700 nm）和 280 的高优点，使其成为一种有效的 RI 传感器。此外，元表面还具有可调节的慢光效应，可调节的群延迟时间范围为 0.12 ps 至 0.38 ps。因此，本研究提出的元表面系统为先进的多波段光学传感、低损耗慢光器件、开关以及非线性光学领域的潜在应用提供了一个可行的平台。
{"title":"Controllable dual resonances of Fano and EIT in a graphene-loaded all-dielectric GaAs metasurface and its sensing and slow-light applications","authors":"Zhichao Wang, Huahao Huang, Hui Zhang, Miao He, Weiren Zhao","doi":"10.1088/1361-6463/ad73e4","DOIUrl":"https://doi.org/10.1088/1361-6463/ad73e4","url":null,"abstract":"Active nanophotonic metasurfaces have attracted considerable attention for their promise to develop compact, tunable optical metadevices with advanced functions. In this work, we theoretically demonstrated the dynamically controllable dual resonances of Fano and electromagnetically induced transparency (EIT) using a graphene-loaded all-dielectric metasurface with U-shaped gallium arsenide (GaAs) nanobars operating in the near-infrared region. The destructive interference between a subradiant mode (i.e. a dark mode) supported by two vertical GaAs bars and two radiative modes (i.e. two bright modes) supported by a horizontal GaAs nanobar gives rise to a Fano resonance and an EIT window with high transmission and a large quality factor (Q-factor) in the transmission spectrum. Importantly, the transmission amplitudes can be flexibly modulated by adjusting the graphene Fermi levels without rebuilding the nanostructures. This modulation results from the controllable light absorption by the loaded graphene monolayer due to its interband losses in the near-infrared spectrum. Furthermore, the peak wavelengths of the Fano resonance and EIT window with high Q-factors are highly sensitive to variations in the refractive index (RI) of the surrounding medium, giving the proposed metasurface a relatively good sensitivity of ∼700 nm RIU<sup>−1</sup> and a high figure of merit of 280, making it an effective RI sensor. Additionally, the metasurface features an adjustable slow light effect, indicated by the adjusted group delay time ranging from 0.12 ps to 0.38 ps. Therefore, the metasurface system proposed in this work offers a viable platform for advanced multi-band optical sensing, low-loss slow light devices, switches, and potential applications in nonlinear optical fields.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"27 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the last few decades, interference has been extensively studied in both the quantum and classical fields, which reveals light volatility and is widely used for high-precision measurements. We have put forward the phenomenon in which the discrete diffraction and interference phenomena, presented by the time-varying voltage of a Su–Schrieffer–Heeger circuit model with an anti-PT (APT) symmetry. To demonstrate Young’s double-slit phenomenon in an APT circuit, we initially explore the coupled mode theory of voltage in the broken phase, observe discrete diffraction under single excitation and interference under double excitations. Furthermore, we design a phase-shifting circuit to observe the effects of phase difference and distance on discrete interference. Our work combines the effects in optics with condensed matter physics, show the Young’s double-slit phenomenon in electrical circuits theoretically and experimentally.
{"title":"Observation of Young’s double-slit phenomenon in anti-PT-symmetric electrical circuits","authors":"Keyu Pan, Xiumei Wang, Xizhou Shen, Haoyi Zhou, Xingping Zhou","doi":"10.1088/1361-6463/ad73e2","DOIUrl":"https://doi.org/10.1088/1361-6463/ad73e2","url":null,"abstract":"In the last few decades, interference has been extensively studied in both the quantum and classical fields, which reveals light volatility and is widely used for high-precision measurements. We have put forward the phenomenon in which the discrete diffraction and interference phenomena, presented by the time-varying voltage of a Su–Schrieffer–Heeger circuit model with an anti-PT (APT) symmetry. To demonstrate Young’s double-slit phenomenon in an APT circuit, we initially explore the coupled mode theory of voltage in the broken phase, observe discrete diffraction under single excitation and interference under double excitations. Furthermore, we design a phase-shifting circuit to observe the effects of phase difference and distance on discrete interference. Our work combines the effects in optics with condensed matter physics, show the Young’s double-slit phenomenon in electrical circuits theoretically and experimentally.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"60 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142223002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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