The recently discovered ferrovalley materials have opened up new opportunities for exploiting novel valleytronic devices capable of storing and processing information. For energy-efficient device applications, achieving electrically controllable valley polarization in ferrovalley materials is of paramount importance. However, most ferrovalley materials inherently lack electrical controllability over valley polarization. Herein, based on first-principles calculations, we demonstrate that the valley polarization of the GdCl2 bilayer can be effectively manipulated through electrical means with the aid of the layer degree of freedom. The GdCl2 bilayer exhibits a magnetic ground state that is dependent on the stacking pattern, with ferromagnetic and antiferromagnetic couplings observed in the AA and AB patterns, respectively. Interestingly, the AA bilayer successfully realizes the coexistence of spontaneous ferroelectric polarization and spin-polarized valley polarization. By switching the electric polarization, the layer contribution of valley polarization will be reversed correspondingly, thus enabling different GdCl2 monolayers to selectively generate the anomalous valley Hall effect (AVHE). Besides, the band splitting can be significantly enhanced by varying the interlayer distance, which makes the generation and manipulation of AVHE more robust. In the AB bilayer without ferroelectricity, the application of a perpendicular electric field can induce spin splitting in energy bands, and flipping the direction of the electric field also allows for flexible control over layer-dependent valley polarization and AVHE. Moreover, two conceptual electrically writable and readable memory devices are proposed based on these two types of stacked GdCl2 bilayer. This study paves the way for the utilization of ferrovalley bilayer in advancing high-performance valleytronic devices.
扫码关注我们
求助内容:
应助结果提醒方式:
